JP5250949B2 - Light emitting element module - Google Patents

Light emitting element module Download PDF

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JP5250949B2
JP5250949B2 JP2006215120A JP2006215120A JP5250949B2 JP 5250949 B2 JP5250949 B2 JP 5250949B2 JP 2006215120 A JP2006215120 A JP 2006215120A JP 2006215120 A JP2006215120 A JP 2006215120A JP 5250949 B2 JP5250949 B2 JP 5250949B2
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resin material
sealing
sealing resin
emitting element
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JP2008041968A (en
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弘毅 初田
博司 寒川
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Dexerials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A luminescent element module (40) which comprises a base (1), a luminescent element (LED bare chip (20)) disposed thereon, and a first encapsulant (31) and a second encapsulant (32) which have been superposed in this order on the element. In order to prevent reflection at the interface (33) between the first encapsulant (31) and the second encapsulant (32) and thereby improve the efficiency of light extraction from the luminescent element, the interface (33) between a first encapsulating resin material (31o) and a second encapsulating resin material (32o) is made gradational before the first encapsulating resin material (31o) and the second encapsulating resin material (32o) are completely cured.

Description

本発明は、基体上で発光素子を樹脂封止した発光素子モジュール及びその製造方法に関する。   The present invention relates to a light emitting element module in which a light emitting element is sealed with a resin on a substrate and a method for manufacturing the same.

発光ダイオード（ＬＥＤ）等の発光素子は、低消費電力、小型、軽量等の特徴を有し、それを樹脂封止したものは、各種表示灯等に用いられているが、近年青色ＬＥＤ、白色ＬＥＤが開発され、高輝度化も進んだことから、液晶表示パネル用のバックライト用光源、照明用光源、信号灯等への応用が急速に進み、自動車のヘッドライトへの応用も開発されている。   Light emitting elements such as light emitting diodes (LEDs) have features such as low power consumption, small size, and light weight, and those sealed with resin are used in various display lamps, etc. As LEDs have been developed and their brightness has been increased, their application to backlight light sources, illumination light sources, signal lights, etc. for liquid crystal display panels is rapidly progressing, and applications for automobile headlights are also being developed. .

従来、ＬＥＤの封止材としては、屈折率が１．５３〜１．５７のビスフェノールＡグリシジルエーテル型エポキシ樹脂が使用されている。しかしながら、ＬＥＤの高輝度化に伴い、ＬＥＤ作動時の温度が上がり、封止材も高温や高輝度の光に曝されるようになると、従来のエポキシ樹脂からなる封止材は耐熱性と耐光性（特に、ＵＶや青色光に対する耐光性）が不十分となって変色を起こすようになり、ＬＥＤの輝度が経時的に低下するという問題がある。この問題に対しては、高透明性のエポキシ樹脂が開発されているが、未だ、十分な耐熱性や耐光性を得るには至っていない。   Conventionally, a bisphenol A glycidyl ether type epoxy resin having a refractive index of 1.53 to 1.57 has been used as an LED sealing material. However, as the brightness of LEDs increases and the temperature during LED operation increases and the encapsulant is exposed to high temperature and high intensity light, the conventional encapsulant made of epoxy resin is resistant to heat and light. There is a problem that the property (particularly, light resistance to UV and blue light) becomes insufficient and discoloration occurs, and the luminance of the LED decreases with time. To solve this problem, highly transparent epoxy resins have been developed, but sufficient heat resistance and light resistance have not yet been obtained.

これに対し、ゲルタイプのシリコーン樹脂が高輝度ＬＥＤに使用されるようになっている。このシリコーン樹脂によれば、エポキシ樹脂に比して耐熱性や耐光性が向上し、さらにゲルタイプであることにより熱応力によるチップの劣化を回避することができる。しかしながら、ゲルタイプのシリコーン樹脂は、硬化後、表面にべたつきがあり、ゴミや埃がつきやすく、また表面に傷もつきやすいため、それを表層として用いるには問題がある。   On the other hand, a gel type silicone resin is used for high-brightness LEDs. According to this silicone resin, heat resistance and light resistance are improved as compared with an epoxy resin, and further, deterioration of the chip due to thermal stress can be avoided by being a gel type. However, the gel type silicone resin has a stickiness on the surface after curing, is liable to be dusty and dusty, and is susceptible to scratches on the surface, and there is a problem in using it as a surface layer.

一方、発光素子を樹脂封止した発光素子モジュールにおいて、発光素子が発した光が封止樹脂と空気との界面で全反射することを防止して光の取り出し効率を上げるため、封止材の外形をドーム形とし、封止材にレンズ機能を付与することがなされている。例えば、環状オレフィン共重合体等の透明樹脂を用いて射出成型法によりドーム形封止材を形成し、この中にゲルタイプのシリコーン樹脂を注入し、その内側の空洞内にＬＥＤチップを固定したものが提案されている（特許文献１）。   On the other hand, in a light emitting element module in which the light emitting element is resin-sealed, the light emitted from the light emitting element is prevented from being totally reflected at the interface between the sealing resin and air, and the light extraction efficiency is increased. The outer shape is a dome shape, and a lens function is imparted to the sealing material. For example, a dome-shaped sealing material is formed by an injection molding method using a transparent resin such as a cyclic olefin copolymer, a gel type silicone resin is injected therein, and an LED chip is fixed in a cavity inside the sealing material. The thing is proposed (patent document 1).

また、基体凹部にＬＥＤベアチップを固定し、その上にゲルタイプのシリコーン樹脂を塗布して硬化させ、一方、ドーム状に中抜となっている型枠内にエポキシ樹脂を充填し、そこにシリコーン樹脂で封止したＬＥＤを被せるように挿入し、型枠内のエポキシ樹脂を硬化させる方法が知られている（特許文献２）。   In addition, the LED bare chip is fixed to the concave portion of the base, and a gel type silicone resin is applied and cured on the LED bare chip. On the other hand, an epoxy resin is filled in a mold that is hollowed out in a dome shape. A method of inserting an LED sealed with a resin so as to cover it and curing an epoxy resin in a mold is known (Patent Document 2).

特開２０００−１５０９６８号公報JP 2000-150968 A 特開２００３−３１８４８号公報JP 2003-31848 A

上述の先行技術では、封止材を２層とし、その第２の封止材（外側）として、タックがなく、硬度の高い材料を用いることで、表面にべたつきが生じ易く、また傷がつき易いというシリコーン樹脂特有の問題を解決している。   In the above-described prior art, the sealing material has two layers, and the second sealing material (outside) is made of a material having no tack and high hardness, so that the surface is easily sticky and scratched. It solves the problem peculiar to silicone resin that it is easy.

しかしながら、上述したいずれの方法においても、ＬＥＤベアチップを直接封止する封止材と、ドーム形に成形した封止材との界面でＬＥＤから発した光が反射し、光の取り出し効率を確実に高めることができない。   However, in any of the above-described methods, the light emitted from the LED is reflected at the interface between the sealing material that directly seals the LED bare chip and the sealing material that is molded into a dome shape, thereby ensuring the light extraction efficiency. It cannot be increased.

このような従来技術の問題点に対し、本発明は、ＬＥＤ等の発光素子を直接封止する第１の封止材と、その外側を封止する第２の封止材からなる発光素子モジュールにおいて、(1)第１の封止材と第２の封止材との界面における反射を防止し、発光素子からの光の取り出し効率を向上させること、(2)封止材中に気泡が含まれないようにすること、さらには、(3)封止材がレンズ機能を有する発光素子モジュールを、型枠を使用せず簡便にコンパクトに製造できるようにすることを目的とする。   In order to solve such problems of the prior art, the present invention provides a light emitting element module comprising a first sealing material that directly seals a light emitting element such as an LED, and a second sealing material that seals the outside thereof. In (1), the reflection at the interface between the first sealing material and the second sealing material is prevented, the light extraction efficiency from the light emitting element is improved, and (2) bubbles are present in the sealing material. Further, it is intended to make it possible to easily and compactly manufacture a light emitting element module whose sealing material has a lens function without using a mold.

本発明者らは、ＬＥＤ等の発光素子が第１の封止材と第２の封止材で順次封止されている発光素子モジュールを製造するにあたり、発光素子上に第１の封止樹脂材料と第２の封止樹脂材料を順次塗布し、それらが完全には硬化していない状態で、双方の封止樹脂材料の界面にぼかし処理を行い、その後これらを硬化させて発光素子モジュールとすることにより、第１の封止材と第２の封止材のぼかされた界面で屈折率が連続的に変化するので、第１の封止材と第２の封止材との界面における反射を防止でき、これにより光の取り出し効率を向上させられること、また、この方法によれば、真空脱泡により気泡を除去できること、さらに、発光素子を搭載する基体を撥油処理することにより、型枠を使用することなく封止樹脂材料をドーム型に成形でき、封止材にレンズ機能を付与できることを見出し、本発明を完成させた。   In producing a light emitting element module in which light emitting elements such as LEDs are sequentially sealed with a first sealing material and a second sealing material, the first sealing resin is formed on the light emitting elements. The material and the second sealing resin material are sequentially applied, and in a state where they are not completely cured, the interface between both the sealing resin materials is subjected to a blurring treatment, and thereafter, these are cured to obtain a light emitting element module. By doing so, since the refractive index continuously changes at the blurred interface between the first sealing material and the second sealing material, the interface between the first sealing material and the second sealing material In this method, it is possible to improve the light extraction efficiency, and according to this method, it is possible to remove bubbles by vacuum defoaming, and furthermore, by subjecting the substrate on which the light emitting element is mounted to an oil repellent treatment , Sealing resin material into dome shape without using formwork Can form, it found that a lens function can be imparted to the sealing material, thereby completing the present invention.

即ち、本発明は、基体上の発光素子に第１の封止材及び第２の封止材が順次積層されている発光素子モジュールであって、第１の封止材と第２の封止材との界面にぼかし処理が施されている発光素子モジュール提供する。   That is, the present invention is a light emitting element module in which a first sealing material and a second sealing material are sequentially laminated on a light emitting element on a substrate, and the first sealing material and the second sealing material are stacked. Provided is a light emitting element module in which an interface with a material is subjected to a blurring process.

また、本発明は、基体に発光素子を搭載し、その上に、第１の封止材の未硬化物である第１の封止樹脂材料、及び第２の封止材の未硬化物である第２の封止樹脂材料を順次塗布し、室温〜１２０℃で数分〜数時間おくアニーリングを行うことにより第１の封止樹脂材料と第２の封止樹脂材料の界面をぼかし、その後、第１の封止樹脂材料と第２の封止樹脂材料を完全に硬化させる発光素子モジュールの製造方法を提供する。   In the present invention, the light emitting element is mounted on the base, and the first sealing resin material that is an uncured material of the first sealing material and the uncured material of the second sealing material are mounted thereon. A certain second sealing resin material is sequentially applied and annealed at room temperature to 120 ° C. for several minutes to several hours to blur the interface between the first sealing resin material and the second sealing resin material, and thereafter A method for manufacturing a light-emitting element module is provided in which a first sealing resin material and a second sealing resin material are completely cured.

本発明の発光素子モジュールによれば、発光素子を封止する第１の封止材と第２の封止材の界面にぼかし処理が施されているので、そのぼかされた界面で第１の封止材と第２の封止材の屈折率が連続的に変化し、発光素子から発した光が第１の封止材と第２の封止材との界面で反射することを防止できる。したがって、発光素子モジュールの光の取り出し効率を向上させることができる。   According to the light emitting element module of the present invention, the blurring process is applied to the interface between the first sealing material and the second sealing material that seals the light emitting element. The refractive index of the sealing material and the second sealing material are continuously changed, and light emitted from the light emitting element is prevented from being reflected at the interface between the first sealing material and the second sealing material. it can. Therefore, the light extraction efficiency of the light emitting element module can be improved.

また、本発明の発光素子モジュールの製造方法によれば、第１の封止材と第２の封止材の界面を確実にかつ容易にぼかすことがきる。   Moreover, according to the manufacturing method of the light emitting element module of this invention, the interface of a 1st sealing material and a 2nd sealing material can be blurred reliably and easily.

さらに、この製造方法によれば、第１の封止材の未硬化物である第１の封止樹脂材料を、硬化物済みの第２の封止材と発光素子の基体との間に注入せず、第１の封止樹脂材料と第２の封止樹脂材料を順次塗布後、それらを硬化させるので、第１の封止樹脂材料中に気泡が生じても、第１の封止樹脂材料の硬化前に真空脱泡を行うことにより容易に気泡を除去することができる。   Furthermore, according to this manufacturing method, the first sealing resin material, which is an uncured material of the first sealing material, is injected between the cured second material and the substrate of the light emitting element. Without applying the first sealing resin material and the second sealing resin material in sequence, the first sealing resin material and the second sealing resin material are cured, so that even if air bubbles are generated in the first sealing resin material, Air bubbles can be easily removed by performing vacuum defoaming before the material is cured.

また、基体表面において、第１の封止材の周縁部を囲む領域及び第２の封止材の周縁部を囲む領域に、それぞれ環状凸部を設け、また、発光素子を囲む領域に撥油処理を施しておくと、型枠を使用することなく、封止樹脂材料をドーム形に成形することが可能となり、簡便な製法で発光素子モジュールの光の取り出し効率を一層向上させることが可能となる。   In addition, on the surface of the substrate, annular convex portions are respectively provided in a region surrounding the peripheral portion of the first sealing material and a region surrounding the peripheral portion of the second sealing material, and an oil repellent is provided in the region surrounding the light emitting element. If the treatment is performed, the sealing resin material can be formed into a dome shape without using a mold, and the light extraction efficiency of the light emitting element module can be further improved by a simple manufacturing method. Become.

以下、本発明を図面を参照しつつ詳細に説明する。なお、各図中、同一符号は同一又は同等の構成要素を表している。   Hereinafter, the present invention will be described in detail with reference to the drawings. In each figure, the same numerals indicate the same or equivalent components.

図１は、本発明の発光素子モジュールの一態様であるＬＥＤモジュール４０の断面図である。このＬＥＤモジュール４０は、基体１に接着固定されたＬＥＤベアチップ２０上に第１の封止材３１及び第２の封止材３２が順次積層されたものであり、この第１の封止材３１と第２の封止材３２との界面３３にぼかし処理が施されていることを特徴としている。ここで界面３３にぼかし処理が施されているとは、第１の封止材３１と第２の封止材３２との間に明瞭な界面が存在しないこと、即ち、第１の封止材３１と第２の封止材のぼかされた界面で屈折率が連続的に変化していることをいう。この界面３３のぼかし処理により、ＬＥＤベアチップ２０から発した光が第１の封止材３１と第２の封止材３２との界面３３で反射することを防止し、より多くの光をＬＥＤモジュール４０の外に取り出すことが可能となる。なお、図中、符号７は、ＬＥＤベアチップ２０の電極端子に接続するリード電極である。   FIG. 1 is a cross-sectional view of an LED module 40 which is an embodiment of the light emitting element module of the present invention. In this LED module 40, a first sealing material 31 and a second sealing material 32 are sequentially laminated on the LED bare chip 20 bonded and fixed to the base 1. And the second sealing material 32 are characterized by being subjected to a blurring process. Here, the interface 33 is subjected to the blurring process means that there is no clear interface between the first sealing material 31 and the second sealing material 32, that is, the first sealing material. This means that the refractive index continuously changes at the blurred interface between 31 and the second sealing material. By the blurring process of the interface 33, the light emitted from the LED bare chip 20 is prevented from being reflected by the interface 33 between the first sealing material 31 and the second sealing material 32, and more light is emitted from the LED module. 40 can be taken out. In the figure, reference numeral 7 denotes a lead electrode connected to the electrode terminal of the LED bare chip 20.

このＬＥＤモジュール４０の製造方法としては、例えば、まず基体１にＬＥＤベアチップ２０を接着固定することにより搭載し、次に、ＬＥＤベアチップ２０上に、第１の封止材の未硬化物である第１の封止樹脂材料を塗布することによりＬＥＤベアチップ２０を覆い、次いで、第１の封止樹脂材料を完全硬化させることなく、第１の封止樹脂材料上に、第２の封止材の未硬化物である第２の封止樹脂材料を塗布し、ひきつづき、アニーリングを行って第１の封止樹脂材料と第２の封止樹脂材料との界面をぼかし、その後、第１の封止樹脂材料と第２の封止樹脂材料を完全に硬化させ、ＬＥＤモジュール４０とする。   As a manufacturing method of the LED module 40, for example, the LED bare chip 20 is first mounted on the substrate 1 by bonding and fixing, and then the first sealing material is an uncured material on the LED bare chip 20. The LED sealing chip material is applied to cover the LED bare chip 20, and then the second sealing material is formed on the first sealing resin material without completely curing the first sealing resin material. A second sealing resin material that is an uncured material is applied, followed by annealing to blur the interface between the first sealing resin material and the second sealing resin material, and then the first sealing The resin material and the second sealing resin material are completely cured to obtain the LED module 40.

ここで、基体１としては、特に制限はなく、従来よりＬＥＤの基体として使用されているＡＢＳ樹脂、ポリフタルアミド等のエンジニアリングプラスチックの射出成型体を使用することができる。この成型体の内部には、リード電極やヒートシンクを内蔵させることができる。また、基体１としては、このような成型体に代えて、リジッド基板やフレキシブル基板を使用することもできる。   Here, there is no restriction | limiting in particular as the base | substrate 1, The injection molding body of engineering plastics, such as ABS resin and polyphthalamide conventionally used as a base | substrate of LED, can be used. A lead electrode and a heat sink can be built in the molded body. Further, as the substrate 1, a rigid substrate or a flexible substrate can be used instead of such a molded body.

基体１の表面には、第１の封止材３１の周縁部及び第２の封止材３２の周縁部を囲む領域に、環状凸部２を形成しておくことが好ましい。これにより、第１の封止樹脂材料や第２の封止樹脂材料が基体１の表面に流れ広がることを防止できる。環状凸部２の具体的な形状は、例えば、図１に示すように、基体１の底面に対して起立した第１の垂直面２ａと第２の垂直面２ｂを有する二重の段差形状としてもよく、図２に示すように、基体１の底面に対して起立した第１の斜面２ｃと第２の斜面２ｄを有する二重の段差形状としてもよく、図３に示すように、断面三角形又は矩形の環状凸部２ｅ、２ｆを隣接させて二重に設けてもよく、図４に示すように、断面三角形又は矩形の環状凸部２ｇ、２ｈを間隙をおいて二重に設けてもよい。また、図５に示すように、単一の斜面を有する環状凸部２ｉを設けてもよい。中でも、環状凸部２としては、構造が単純な点から、図５のように単一斜面を形成することが好ましい。   On the surface of the substrate 1, it is preferable to form the annular convex portion 2 in a region surrounding the peripheral edge of the first sealing material 31 and the peripheral edge of the second sealing material 32. Thereby, it is possible to prevent the first sealing resin material and the second sealing resin material from flowing and spreading on the surface of the substrate 1. The specific shape of the annular protrusion 2 is, for example, as a double stepped shape having a first vertical surface 2 a and a second vertical surface 2 b erected with respect to the bottom surface of the substrate 1 as shown in FIG. Alternatively, as shown in FIG. 2, a double stepped shape having a first inclined surface 2c and a second inclined surface 2d standing with respect to the bottom surface of the substrate 1 may be used. As shown in FIG. Alternatively, the rectangular annular protrusions 2e and 2f may be provided adjacent to each other, and the annular protrusions 2g and 2h having a triangular or rectangular cross section may be provided with a gap therebetween as shown in FIG. Good. Moreover, as shown in FIG. 5, you may provide the cyclic | annular convex part 2i which has a single slope. Especially, as the annular convex part 2, it is preferable to form a single slope as shown in FIG. 5 from a simple structure.

また、基体１の表面のＬＥＤの搭載部位を囲む領域には、第１の封止樹脂材料及び第２の封止樹脂材料の塗布前に予め撥油処理層３を設け、基体表面の界面張力を低めることが好ましい。これにより、これら封止樹脂材料が基体１の表面に流れ広がることを防止できる。特に、図６に示すように、平坦で環状凸部のない基体１を使用する場合には、この撥油処理が必須である。さらに、第１の封止材３１及び第２の封止材３２を、それぞれ型枠を使用することなく、ドーム形（即ち盾状から半球状）に形成することが可能となる。   Also, an oil repellent treatment layer 3 is provided in advance in the region surrounding the LED mounting portion on the surface of the substrate 1 before application of the first sealing resin material and the second sealing resin material, and the interfacial tension on the substrate surface Is preferably reduced. Thereby, it can prevent that these sealing resin materials flow and spread on the surface of the base 1. In particular, as shown in FIG. 6, this oil-repellent treatment is indispensable when using a flat substrate 1 without an annular convex portion. Furthermore, it becomes possible to form the 1st sealing material 31 and the 2nd sealing material 32 in a dome shape (namely, shield shape to hemisphere), respectively, without using a formwork.

撥油処理層３は、基体１の表面に、表面張力の低い撥油剤を塗布し、その被膜を形成することにより設けることができる。ここで、撥油剤としてはフッ素系樹脂が好ましく、これを溶剤で希釈し、塗布、乾燥させることにより簡便に撥油剤の被膜を形成することができる。   The oil repellent treatment layer 3 can be provided by applying an oil repellent having a low surface tension to the surface of the substrate 1 and forming a film thereof. Here, as the oil repellent, a fluororesin is preferable, and a coating of the oil repellent can be easily formed by diluting the resin with a solvent, coating and drying.

フッ素系樹脂の代表例としては、パーフルオロアルキルアクリレートもしくはメタクリレート（アルキル基の炭素数６〜９）のホモポリマーをあげることができる。このホモポリマーは、フッ素系溶剤に溶解させて使用する。また、撥油剤としては、パーフルオロアルキルアクリレートとラウリルアクリレート等の共重合体も使用することができる。この共重合体は、トルエン、メチルエチルケトン等の汎用溶媒を用いて希釈することができる。   As a typical example of the fluororesin, a homopolymer of perfluoroalkyl acrylate or methacrylate (alkyl group having 6 to 9 carbon atoms) can be given. This homopolymer is used after being dissolved in a fluorinated solvent. As the oil repellent, a copolymer such as perfluoroalkyl acrylate and lauryl acrylate can also be used. This copolymer can be diluted using a general-purpose solvent such as toluene or methyl ethyl ketone.

なお、基体１の表面の撥油剤の塗布領域は、環状凸部２も含めてＬＥＤの搭載部位を囲む領域とすることができるが、ＬＥＤの搭載部位には塗布しないようにする。ＬＥＤの搭載部位に撥油剤を塗布すると、そこにＬＥＤベアチップを接着固定することが難しくなる。また、ＬＥＤベアチップ２０の表面に塗布すると、撥油剤の屈折率が低いため光取り出し効率が悪くなる。   In addition, although the application | coating area | region of the lube repellant on the surface of the base | substrate 1 can be made into the area | region surrounding the LED mounting part also including the cyclic | annular convex part 2, it does not apply | coat to the LED mounting part. When an oil repellent is applied to the LED mounting site, it is difficult to bond and fix the LED bare chip to the LED mounting portion. Moreover, since it will apply | coat to the surface of the LED bare chip 20, the light extraction efficiency will worsen because the refractive index of an oil repellent is low.

第１の封止樹脂材料としては、その硬化物（即ち第１の封止材３１）の硬度が、硬くないものが好ましく、より具体的には、ショアＡ硬度で７０以下が好ましい。これにより、ＬＥＤモジュール４０においてＬＥＤベアチップ２０と第１の封止材３１との間に生じる熱応力を緩和することができ、ＬＥＤベアチップ２０の発光寿命を大幅に伸ばすことが可能となる。第１の封止材３１の硬度の下限については特に制限はなく、柔らかいゲル状であってもよい。   As the first sealing resin material, a hardened material (that is, the first sealing material 31) is preferably not hard, and more specifically, the Shore A hardness is preferably 70 or less. Thereby, the thermal stress which arises between the LED bare chip 20 and the 1st sealing material 31 in the LED module 40 can be relieved, and it becomes possible to extend the light emission lifetime of the LED bare chip 20 significantly. There is no restriction | limiting in particular about the minimum of the hardness of the 1st sealing material 31, A soft gel form may be sufficient.

第１の封止樹脂材料の粘度は、２５℃で５０Ｐａ・Ｓ以下が好ましく、より好ましくは１０Ｐａ・Ｓ以下である。これにより、第１の封止樹脂材料をＬＥＤベアチップ２０上に塗布する際に気泡が発生し難くなり、また、気泡が発生した場合でも、その気泡を真空脱泡等で効果的に除去することができる。   The viscosity of the first sealing resin material is preferably 50 Pa · S or less at 25 ° C., more preferably 10 Pa · S or less. This makes it difficult for bubbles to be generated when the first sealing resin material is applied onto the LED bare chip 20, and even when bubbles are generated, the bubbles can be effectively removed by vacuum defoaming or the like. Can do.

第１の封止樹脂材料の硬化物である第１の封止材３１の屈折率は、光取り出し効率の点から、ＬＥＤベアチップの基板の屈折率（サファイア基板の場合１．７６）と第２の封止材３２の屈折率との間の１．４０〜１．７６とすることが好ましい。したがって、その未硬化物である第１の封止樹脂材料の屈折率としては、これよりも屈折率が０．０１〜０．０３低いものを使用することが好ましい。通常、硬化させることで屈折率は０．０１〜０．０３上昇するからである。   The refractive index of the first sealing material 31 that is a cured product of the first sealing resin material is the refractive index of the substrate of the LED bare chip (1.76 in the case of a sapphire substrate) and the second from the viewpoint of light extraction efficiency. The refractive index of the sealing material 32 is preferably 1.40 to 1.76. Therefore, as the refractive index of the first sealing resin material that is an uncured product, it is preferable to use a material having a refractive index lower by 0.01 to 0.03 than this. This is because the refractive index usually increases by 0.01 to 0.03 by curing.

上述の硬度、粘度、屈折率の点から、第１の封止樹脂材料の好適な樹脂の種類としては、シリコーン樹脂、アクリル樹脂、メタクリル樹脂、ウレタン樹脂、エポキシ樹脂等をあげることができ、特に、シリコーン樹脂、アクリル樹脂、メタクリル樹脂が好ましい。   In view of the above-mentioned hardness, viscosity, and refractive index, examples of suitable resins for the first sealing resin material include silicone resins, acrylic resins, methacrylic resins, urethane resins, and epoxy resins. Silicone resin, acrylic resin, and methacrylic resin are preferable.

また、第１の封止樹脂材料には、必要に応じて、消泡剤、重合禁止剤、重合開始剤等の添加剤を加えることができる。   Moreover, additives, such as an antifoamer, a polymerization inhibitor, and a polymerization initiator, can be added to the first sealing resin material as necessary.

第１の封止樹脂材料のＬＥＤベアチップ２０上への塗布方法としては、例えば、シリンジ、ディスペンサー等を用い、ドーム型に盛りつけすることが好ましい。   As a method for applying the first sealing resin material onto the LED bare chip 20, it is preferable to use a syringe, a dispenser, or the like, for example, and arrange it in a dome shape.

第１の封止樹脂材料をＬＥＤベアチップ２０上へ塗布した後は、必要に応じて脱泡処理を行う。即ち、第１の封止樹脂材料として、低粘度の樹脂を使用し、さらに消泡剤を添加した場合でも、ＬＥＤベアチップ２０自体の段差部、ＬＥＤベアチップ２０と基体１との接合部周辺、ＬＥＤベアチップ２０と電極との接合部周辺、ボンディングワイヤーの周囲等では、気泡が発生することを完全になくすことは難しい。そこで、脱泡処理により封止樹脂中あるいはその表面に発生した気泡を除去する。   After apply | coating the 1st sealing resin material on the LED bare chip 20, a defoaming process is performed as needed. That is, even when a low-viscosity resin is used as the first sealing resin material and an antifoaming agent is further added, the stepped portion of the LED bare chip 20 itself, the periphery of the joint between the LED bare chip 20 and the base 1, the LED It is difficult to completely eliminate the generation of bubbles around the joint between the bare chip 20 and the electrode, around the bonding wire, and the like. Therefore, bubbles generated in the sealing resin or on the surface thereof are removed by defoaming treatment.

脱泡処理としては、脱泡効果の点から真空脱泡が好ましい。真空脱泡は、第１の封止樹脂材料を塗布した後、これを真空チャンバーなどの中で真空にすることにより気泡を膨張、破裂させる処理である。本発明では、第１の封止樹脂材料をＬＥＤベアチップ２０上に塗布した時点で、その第１の封止樹脂材料が第２の封止樹脂材料の硬化物（第２の封止材３２）で覆われていないので、真空脱泡を容易に行うことができる。   As the defoaming treatment, vacuum defoaming is preferable from the viewpoint of the defoaming effect. The vacuum defoaming is a process of expanding and rupturing bubbles by applying a first sealing resin material and then applying a vacuum in a vacuum chamber or the like. In the present invention, when the first sealing resin material is applied onto the LED bare chip 20, the first sealing resin material is a cured product of the second sealing resin material (second sealing material 32). Therefore, vacuum deaeration can be easily performed.

また、第１の封止材３１及び第２の封止材３２をそれぞれドーム形に成形する場合において、第１の封止樹脂材料として、粘度５Ｐａ・Ｓ（２５℃）以下の低粘度樹脂材料を使用した場合には、第１の封止樹脂材料をＬＥＤベアチップ２０上へ塗布した後、それを半硬化させることが好ましい。半硬化により、第１の封止樹脂材料上に第２の封止樹脂材料を塗布した後のそれらの塗布形状をドーム形にすることが容易となる。また、この半硬化により、樹脂の硬化時に生じる収縮の大部分が終了するので、後に完全硬化させた時の応力歪みの発生を最小限に抑えることができる。   In the case where the first sealing material 31 and the second sealing material 32 are each formed into a dome shape, the first sealing resin material is a low-viscosity resin material having a viscosity of 5 Pa · S (25 ° C.) or less. When is used, it is preferable that the first sealing resin material is applied onto the LED bare chip 20 and then semi-cured. By semi-curing, it becomes easy to make the application shape after applying the second sealing resin material on the first sealing resin material into a dome shape. Moreover, since most of the shrinkage that occurs when the resin is cured is completed by this semi-curing, it is possible to minimize the occurrence of stress strain when the resin is completely cured later.

この半硬化は、本硬化よりも低温で硬化させたり、少ないＵＶ照射量で硬化させたり、硬化時間を短縮すること等で行い、半硬化の程度は、流動性がなくなる程度が好ましい。   This semi-curing is carried out by curing at a lower temperature than the main curing, curing with a small UV irradiation amount, shortening the curing time, etc. The degree of semi-curing is preferably such that the fluidity is lost.

一方、第２の封止材３２は、外装機能とレンズ機能を備えるように形成する。レンズ機能にとって重要な特性の１つは、光の外部取り出し効率を最大限高めることである。そのため、第２の封止材３２はドーム形、特に、半球状に形成することが好ましい。   On the other hand, the second sealing material 32 is formed to have an exterior function and a lens function. One of the important characteristics for the lens function is to maximize the light extraction efficiency. Therefore, the second sealing material 32 is preferably formed in a dome shape, particularly a hemispherical shape.

型枠を用いることなく、半球状に形成するため、第２の封止樹脂材料としては、粘度（２５℃）を、好ましくは０．１〜１０００Ｐａ・Ｓとする。第２の封止樹脂材料の粘度がこれよりも低いと、第１の封止樹脂材料の塗布形状にもよるが、第２の封止樹脂材料を第１の封止樹脂材料上に塗布する際に、第２の封止樹脂材料が流れ易くなり、半球状になりにくい。   In order to form a hemisphere without using a mold, the second sealing resin material preferably has a viscosity (25 ° C.) of 0.1 to 1000 Pa · S. If the viscosity of the second sealing resin material is lower than this, the second sealing resin material is applied onto the first sealing resin material, depending on the application shape of the first sealing resin material. At this time, the second sealing resin material tends to flow and does not easily become hemispherical.

第２の封止樹脂材料を半球状に成形するため、第１の封止樹脂材料をドーム形に成形する場合と同様に、基体１の表面には、第２の封止樹脂材料の周縁部を囲むように環状凸部２ｂを設けておくことが好ましく、また、撥油処理をしておくことが好ましい。なお、撥油処理は、必ずしも、第１の封止樹脂材料の周縁部と第２の封止樹脂材料の周縁部の双方に施しておく必要はなく、例えば図７に示すように、第２の封止樹脂材料の周縁部にのみ施してもよい。また、封止樹脂材料の粘度が高く、塗布時の広がりが少ない場合には、撥油処理を完全に省略してもよい。   Since the second sealing resin material is formed into a hemispherical shape, the peripheral portion of the second sealing resin material is formed on the surface of the base 1 as in the case where the first sealing resin material is formed into a dome shape. It is preferable to provide the annular convex portion 2b so as to surround it, and it is preferable to perform an oil repellent treatment. Note that the oil-repellent treatment is not necessarily performed on both the peripheral portion of the first sealing resin material and the peripheral portion of the second sealing resin material. For example, as shown in FIG. You may give only to the peripheral part of this sealing resin material. In addition, when the viscosity of the sealing resin material is high and the spread during application is small, the oil repellent treatment may be omitted completely.

第２の封止材３２の屈折率は、ＬＥＤモジュール４０の光の外部取り出し効率を高めるため、第１の封止材３１の屈折率と第２の封止材３２の屈折率との差が小さくなるように設計することが好ましく、より具体的には、０．０３５以内とすることが好ましい。双方の封止材の屈折率の差が大きいと、それらの界面で反射もしくは屈折が起こり、設計通りの放射特性が得られなかったり、光取り出し効率が低下するという問題が生じる。   The refractive index of the second sealing material 32 increases the light extraction efficiency of the LED module 40, so that the difference between the refractive index of the first sealing material 31 and the refractive index of the second sealing material 32 is different. It is preferable to design so that it may become small, and specifically, it is preferable to set it within 0.035. If the difference in refractive index between the two sealing materials is large, reflection or refraction occurs at the interface between them, and there arises a problem that the radiation characteristics as designed cannot be obtained or the light extraction efficiency is lowered.

また、第２の封止材３２の屈折率は、第１の封止材３１の屈折率に比して小さくても大きくてもよい。そこで、第２の封止材３２の屈折率は、より具体的には、第１の封止材３１の屈折率が、例えば１．４３である場合に、１．３９５〜１．４６５とすることが好ましい。   The refractive index of the second sealing material 32 may be smaller or larger than the refractive index of the first sealing material 31. Therefore, more specifically, the refractive index of the second sealing material 32 is set to 1.395 to 1.465 when the refractive index of the first sealing material 31 is 1.43, for example. It is preferable.

第２の封止材３２の外装機能としては、第２の封止材の硬化後に通常の使用条件下で変形しない程度の剛性を有することが必要であり、例えば、ショアＡ硬度で３０以上であることが好ましく、５０以上がより好ましい。また、表面がドライタッチであり、ゴミ等が付着しにくいことが必要とされる。   As the exterior function of the second sealing material 32, it is necessary to have a rigidity that does not deform under normal use conditions after the second sealing material is cured. For example, the Shore A hardness is 30 or more. It is preferable that it is 50 or more. Further, the surface is dry touch, and it is required that dust or the like is not easily attached.

第２の封止材３２を形成する第２の封止材樹脂材料の樹脂成分の好適な例としては、シリコーン樹脂、アクリル樹脂、メタクリル樹脂、ウレタン樹脂、エポキシ樹脂、環状オレフィン樹脂等をあげることができ、特に、アクリル樹脂、メタクリル樹脂、エポキシ樹脂が好ましい。   Preferred examples of the resin component of the second sealing material resin material forming the second sealing material 32 include silicone resin, acrylic resin, methacrylic resin, urethane resin, epoxy resin, and cyclic olefin resin. In particular, acrylic resin, methacrylic resin, and epoxy resin are preferable.

ただし、第２の封止樹脂材料としては、第１の封止樹脂材料との界面がアニーリングにより十分にぼかされるものを使用することが必要である。そのため、第１の封止樹脂材料と第２の封止樹脂材料としては、次の少なくとも１つの条件を満たすものを選択する。   However, as the second sealing resin material, it is necessary to use a material whose interface with the first sealing resin material is sufficiently blurred by annealing. Therefore, a material that satisfies at least one of the following conditions is selected as the first sealing resin material and the second sealing resin material.

(1)第１の封止樹脂材料に含まれる１つ以上の成分と第２の封止樹脂材料に含まれる１つ以上の成分とが互いに相溶性であること
(2)第１の封止樹脂材料に含まれる１つ以上の成分と第２の封止樹脂材料に含まれる１つ以上の成分とが化学結合を形成すること
(3)第１の封止樹脂材料と第２の封止樹脂材料の少なくとも一方に相溶化剤が含まれていること。ここで、相溶化剤としては、第１の封止樹脂材料に相溶な成分Ａと第２の封止樹脂材に相溶な成分Ｂとからなる、(a)グラフトポリマー、ブロックポリマー、コポリマー等、(b)界面活性剤、(c)シランカップリング剤等をあげることができる。 (1) One or more components included in the first sealing resin material and one or more components included in the second sealing resin material are compatible with each other.
(2) One or more components contained in the first sealing resin material and one or more components contained in the second sealing resin material form a chemical bond.
(3) At least one of the first sealing resin material and the second sealing resin material contains a compatibilizing agent. Here, as the compatibilizing agent, (a) a graft polymer, a block polymer, a copolymer comprising component A compatible with the first sealing resin material and component B compatible with the second sealing resin material (B) surfactants, (c) silane coupling agents, and the like.

これに対し、第１の封止樹脂材料と第２の封止樹脂材料とが全く非相溶である場合（例えば、シリコーン樹脂とエポキシ樹脂）、第１の封止樹脂材料と第２の封止樹脂材料の硬化系が反応し合わない場合（例えば、シリコーン樹脂をヒドロシリル化で硬化させ、エポキシ樹脂を酸無水物で硬化させる場合）、さらに相溶化剤の添加もない場合には、第１の封止材と第２の封止材との界面をアニーリングにより十分にぼかすことができない。   On the other hand, when the first sealing resin material and the second sealing resin material are completely incompatible (for example, a silicone resin and an epoxy resin), the first sealing resin material and the second sealing resin are used. When the curing system of the stopping resin material does not react with each other (for example, when the silicone resin is cured by hydrosilylation and the epoxy resin is cured with an acid anhydride), and when no compatibilizer is added, the first The interface between the sealing material and the second sealing material cannot be sufficiently blurred by annealing.

アニーリングは、第１の封止樹脂材料と第２の封止樹脂材料とを積層後、それらの硬化前に行う。これにより、第１の封止樹脂材料と第２の封止樹脂材料との界面がぼかされ、急激な屈折率の変化が無くなり、これらの界面での反射を防止し、光の取り出し効率を上げることが可能となる。   Annealing is performed after laminating the first sealing resin material and the second sealing resin material and before curing them. This blurs the interface between the first sealing resin material and the second sealing resin material, eliminates a sudden change in refractive index, prevents reflection at these interfaces, and improves the light extraction efficiency. It is possible to raise.

アニーリングは、第１の封止樹脂と第２の封止樹脂が完全には硬化しない条件で行うことが重要である。通常、室温〜１２０℃で数分〜数時間、より好ましくは４０〜８０℃で１０分〜１時間おくことにより行い、特に、ラジカル硬化がなされる場合には、例えば、温度６０℃以下の低めの温度設定で行う。   It is important that the annealing be performed under conditions where the first sealing resin and the second sealing resin are not completely cured. Usually, it is carried out at room temperature to 120 ° C. for several minutes to several hours, more preferably at 40 to 80 ° C. for 10 minutes to 1 hour, and particularly when radical curing is performed, for example, a lower temperature of 60 ° C. or lower. Perform at the temperature setting.

アニーリング後に行う、第１の封止樹脂材料と第２の封止樹脂材料との完全硬化は、ＵＶ硬化、熱ラジカル硬化、光酸化硬化、ヒドロシリル化硬化等により行うことができる。なお、ガスや溶剤を発生する硬化方法は好ましくない。   The complete curing of the first sealing resin material and the second sealing resin material performed after annealing can be performed by UV curing, thermal radical curing, photooxidation curing, hydrosilylation curing, or the like. A curing method that generates a gas or a solvent is not preferable.

完全硬化後の、第１の封止材と第２の封止材との界面のぼかしの程度は次のように評価することができる。図１１のように発光素子モジュールをＡ−Ｂ面及びＡ’−Ｂ’面でカットして評価用モジュール５０を作製し、これに図１２のように、光線Ｌ0 を、第１の封止材３１との第２の封止材３２と界面３３に対する入射角θが６０°となるように投光する。入射光Ｌ0は界面３３で透過光Ｌ1と反射光Ｌ2に分かれるが、この反射光Ｌ2の光線量を測定する。ここで、カット面での入射光Ｌ0の反射を防止するため、カット面は入射光Ｌ0に対して垂直となるように形成する。   The degree of blurring of the interface between the first sealing material and the second sealing material after complete curing can be evaluated as follows. The light emitting element module is cut along the AB plane and the A′-B ′ plane as shown in FIG. 11 to produce the evaluation module 50, and as shown in FIG. The light is projected so that the incident angle θ with respect to the second sealing material 32 and the interface 33 with respect to 31 is 60 °. The incident light L0 is divided into transmitted light L1 and reflected light L2 at the interface 33, and the amount of light of the reflected light L2 is measured. Here, in order to prevent reflection of the incident light L0 on the cut surface, the cut surface is formed to be perpendicular to the incident light L0.

界面３３が全く存在しない場合には、反射光Ｌ2は生じないが、界面３３が明瞭に存在するほど反射光Ｌ2 の光量は多くなる。そこで、入射光Ｌ0 の光線量に対して界面３３で反射した光Ｌ2 の光線量が５％以下の場合に、第１の封止材３１と第２の封止材３２との界面３３が十分にぼかされていると評価する。   When the interface 33 is not present at all, the reflected light L2 is not generated, but the more the interface 33 is clearly present, the greater the amount of the reflected light L2. Therefore, when the light amount of the light L2 reflected by the interface 33 with respect to the light amount of the incident light L0 is 5% or less, the interface 33 between the first sealing material 31 and the second sealing material 32 is sufficient. Assess that you are blurred.

なお、前述のように本発明では第１の封止材と第２の封止材の屈折率の差を、好ましくは０．０３５以内と小さくするので、入射角θを６０°とすると全反射は生じない。また、第１の封止材と第２の封止材の界面がぼかされているので、第１の封止材と第２の封止材の屈折率の差の具体的数値や大小関係によらず、入射光Ｌ0 の光量に対する反射光Ｌ2 の光量は５％以下となる。   As described above, in the present invention, since the difference in refractive index between the first sealing material and the second sealing material is preferably as small as 0.035 or less, the total reflection is obtained when the incident angle θ is 60 °. Does not occur. In addition, since the interface between the first sealing material and the second sealing material is blurred, specific numerical values and magnitude relationships of the difference in refractive index between the first sealing material and the second sealing material Regardless, the amount of reflected light L2 relative to the amount of incident light L0 is 5% or less.

本発明の発光素子モジュールは、種々の態様をとることができる。例えば、基体１とＬＥＤベアチップ２０は直接的に接合されていなくてもよく、別途シリコン等で作製された回路基板を介して基体１とＬＥＤベアチップ２０を間接的に接合してもよい。この場合、ＬＥＤベアチップ２０と回路基板とは、フリップチップ等のバンプ接合がなされ、回路基板と基体１とは、金線接合がなされる。   The light emitting element module of the present invention can take various modes. For example, the base body 1 and the LED bare chip 20 may not be directly joined, and the base body 1 and the LED bare chip 20 may be indirectly joined via a circuit board made of silicon or the like separately. In this case, the LED bare chip 20 and the circuit board are subjected to bump bonding such as flip chip, and the circuit board and the base body 1 are bonded to gold.

また、基体１とＬＥＤベアチップ２０との間に間隙があく場合に、その間隙を第１の封止材３１で充填してもよいが、アンダーフィル用封止樹脂を別途用意し、アンダーフィル用封止樹脂で充填してもよい。アンダーフィル用封止樹脂の特性としては、高熱伝導性、耐熱性であることが好ましく、このような樹脂としては、例えば、アルミナ粉末を充填したシリコーン樹脂等を使用することができる。   If there is a gap between the substrate 1 and the LED bare chip 20, the gap may be filled with the first sealing material 31, but an underfill sealing resin is prepared separately for underfill. You may fill with sealing resin. The properties of the underfill sealing resin are preferably high thermal conductivity and heat resistance. As such a resin, for example, a silicone resin filled with alumina powder can be used.

また、基体１の表面には、適宜反射板を設けてもよく、複数のＬＥＤベアチップを並べて封止してもよい。   Further, a reflection plate may be appropriately provided on the surface of the substrate 1, and a plurality of LED bare chips may be arranged and sealed.

発光素子としては、ＬＥＤの他、ＥＬ素子等を設けることができる。   As the light emitting element, an EL element or the like can be provided in addition to the LED.

以下、実施例に基づいて、本発明を詳細に説明する。   Hereinafter, based on an Example, this invention is demonstrated in detail.

実施例１
（１）第１の封止樹脂材料の調製
9,9-ビス(4-(2-アクリロキシエトキシ)フェニル)フルオレン（大阪ガスケミカル社、BPEF-A）２５重量部とフェノキシエチルアクリレート７５重量部と配合し、これに重合開始剤（チバイガイギースペシャリティーケミカルズ、ダロキュア1173）１重量部を加え、第１の封止樹脂材料とした。 Example 1
(1) Preparation of first sealing resin material
9,9-bis (4- (2-acryloxyethoxy) phenyl) fluorene (Osaka Gas Chemical Co., Ltd., BPEF-A) 25 parts by weight and phenoxyethyl acrylate 75 parts by weight were added to this, and a polymerization initiator (Ciba-Geigy) was added. Specialty Chemicals, Darocur 1173) 1 part by weight was added to make a first sealing resin material.

得られた第１の封止樹脂材料は、粘度６０ｍＰａ・Ｓ（２５℃）、屈折率１．５３９であり、それをハロゲンランプで照射（積算光量１Ｊ／ｃｍ2 ）して硬化させた硬化物は、ショアＡ硬度が７０であった。 The obtained first sealing resin material has a viscosity of 60 mPa · S (25 ° C.) and a refractive index of 1.539, and is cured by irradiating it with a halogen lamp (integrated light amount 1 J / cm 2 ). Had a Shore A hardness of 70.

（２）第２の封止樹脂材料の調製
9,9-ビス(4-(2-アクリロキシエトキシ)フェニル)フルオレン（大阪ガスケミカル社、BPEF-A）５０重量部とイソボルニルアクリレート５０重量部とを配合し、これに重合開始剤（チバイガイギースペシャリティーケミカルズ、ダロキュア1173）１重量部を加え、第２の封止樹脂材料とした。 (2) Preparation of second sealing resin material
9,9-bis (4- (2-acryloxyethoxy) phenyl) fluorene (Osaka Gas Chemical Co., Ltd., BPEF-A) 50 parts by weight and isobornyl acrylate 50 parts by weight were blended, and a polymerization initiator ( 1 part by weight of Ciba-Geigy Specialty Chemicals, Darocur 1173) was added to make a second sealing resin material.

得られた第２の封止樹脂材料は、粘度４５０ｍＰａ・Ｓ（２５℃）、屈折率１．５４１であり、それをハロゲンランプで照射（積算光量１Ｊ／ｃｍ2 ）して硬化させた硬化物は、ショアＡ硬度が９７であった。 The obtained second sealing resin material has a viscosity of 450 mPa · S (25 ° C.) and a refractive index of 1.541, and is cured by irradiating it with a halogen lamp (integrated light amount 1 J / cm 2 ). Had a Shore A hardness of 97.

（３）ＬＥＤモジュールの製造
図８Ａ〜図８Ｆに示したように、ＬＥＤを樹脂封止したＬＥＤモジュール４１を得た。 (3) Manufacture of LED module As shown to FIG. 8A-FIG. 8F, LED module 41 which resin-sealed LED was obtained.

即ち、ＡＢＳ樹脂を削り出すことにより、６ｍｍ×６ｍｍ×２ｍｍ（厚）の基体１Ａを得、この基体の中央部に直径２ｍｍの穴を開け、この基体１の穴に直径２ｍｍ、厚さ１．５ｍｍの銅製の円柱４を嵌め込んだ（図８Ａ）。次に、基体１Ａの上面に幅０．７５ｍｍ、深さ０．３ｍｍの三角溝５ａ、５ｂを環状に二重に掘り、さらに幅０．７５ｍｍ、深さ０．３ｍｍの溝６を堀り（図８Ｂ）、その溝６に電極７ａをはめ込んだ（図８Ｃ）。   That is, by cutting out the ABS resin, a base 1A of 6 mm × 6 mm × 2 mm (thickness) is obtained, a hole having a diameter of 2 mm is formed in the central portion of the base, and a hole having a diameter of 2 mm and a thickness of 1. A 5 mm copper cylinder 4 was fitted (FIG. 8A). Next, triangular grooves 5a and 5b having a width of 0.75 mm and a depth of 0.3 mm are dug in a ring shape on the upper surface of the base 1A, and a groove 6 having a width of 0.75 mm and a depth of 0.3 mm is further dug ( 8B), an electrode 7a was fitted in the groove 6 (FIG. 8C).

そして、１．００ｍｍ角の緑色ＬＥＤベアチップ２０を導電性接着剤で銅製の円柱４上に接着し、金線２１のワイヤーボンディングでＬＥＤベアチップ２０と電極７ａを接続した。   And the green LED bare chip 20 of 1.00 mm square was adhere | attached on the copper cylinder 4 with the conductive adhesive, and the LED bare chip 20 and the electrode 7a were connected by the wire bonding of the gold wire 21. FIG.

次に、基体１Ａに、第１の封止樹脂材料３１0 を内側の溝５ａまでシリンジを用いて盛りつけ（図８Ｄ）、真空脱泡により気泡を取り除き、再度第１の封止樹脂材料３１0 を盛り足し、ＵＶを０．１Ｊ照射して半硬化させた。その後、直ちに第２の封止樹脂材料材３２0 を第１の封止樹脂材料３１0 の上に外側の溝５ｂまで盛りつけ（図８Ｅ）、６０℃１０分のアニーリングを行うことにより第１の封止樹脂材料３１0 と第２の封止樹脂材料３２0 との界面３３0 をぼかし、引き続き１ＪのＵＶを照射して第１の封止樹脂材料３１0 と第２の封止樹脂材料３２0 を完全に硬化させ、ＬＥＤモジュール４１を得た（図８Ｆ）。 Next, the substrate 1A, the first encapsulation resin material 31 0 via syringe to the inside of the groove 5a Serve (Figure 8D), removing air bubbles by vacuum degassing, the first encapsulation resin material 31 again 0 And UV-irradiated 0.1 J to be semi-cured. Immediately thereafter, spread a second encapsulation resin material material 32 0 to the groove 5b of the outer over the first encapsulation resin material 31 0 (Fig. 8E), first by annealing of 60 ° C. 10 minutes encapsulation resin material 31 0 and the second blurred interface 33 0 in the sealing resin material 32 0, subsequently a first sealing resin material 31 0 by irradiating UV at 1J second encapsulation resin material 32 0 was completely cured to obtain an LED module 41 (FIG. 8F).

このＬＥＤモジュール４１の第１の封止材３１と第２の封止材３２中の気泡の有無を光学顕微鏡により調べたところ、気泡は認められなかった。   When the presence or absence of bubbles in the first sealing material 31 and the second sealing material 32 of the LED module 41 was examined with an optical microscope, no bubbles were recognized.

また、光の取り出し総量を積分球による総光量の測定により調べたところ、ベアチップの２．５倍であった。   Further, when the total amount of light extracted was measured by measuring the total amount of light using an integrating sphere, it was 2.5 times that of the bare chip.

比較例１
実施例１において、第２の封止樹脂材料材３２0 を第１の封止樹脂材料３１0の上に盛りつけた後、アニーリングを行うことなく、直ちに双方の封止樹脂材料を完全硬化させた以外は、実施例１と同様にしてＬＥＤモジュールを作製した。 Comparative Example 1
In Example 1, after the dished the second encapsulation resin material material 32 0 on the first encapsulation resin material 31 0, without annealing, was immediately completely cure both the encapsulation resin material Except for the above, an LED module was produced in the same manner as in Example 1.

このＬＥＤモジュールの光の取り出し総量を実施例１と同様に調べたところ、ベアチップの１．９５倍であった。   When the total amount of light extracted from this LED module was examined in the same manner as in Example 1, it was 1.95 times that of the bare chip.

実施例２
（１）第１の封止樹脂材料の調製
9,9-ビス(4-(2-アクリロキシエトキシ)フェニル)フルオレン（大阪ガスケミカル社、BPEF-A）１２．５重量部とパラクミルフェノキシエチルアクリレート（東亞合成社、アロニックスM110）１２．５重量部とフェノキシエチルアクリレート７５重量部を配合し、これに重合開始剤（チバイガイギースペシャリティーケミカルズ、ダロキュア1173）１重量部を加え、第１の封止樹脂材料とした。 Example 2
(1) Preparation of first sealing resin material
9,9-bis (4- (2-acryloxyethoxy) phenyl) fluorene (Osaka Gas Chemical Co., BPEF-A) 12.5 parts by weight and paracumylphenoxyethyl acrylate (Toagosei Co., Aronix M110) 12.5 Part by weight and 75 parts by weight of phenoxyethyl acrylate were blended, and 1 part by weight of a polymerization initiator (Ciba Geigy Specialty Chemicals, Darocur 1173) was added thereto to form a first sealing resin material.

得られた第１の封止樹脂材料は、粘度５０ｍＰａ・Ｓ（２５℃）、屈折率１．５３１であり、それをハロゲンランプで照射（積算光量１Ｊ／ｃｍ2 ）して硬化させた硬化物は、ショアＡ硬度が６５であった。 The obtained first sealing resin material has a viscosity of 50 mPa · S (25 ° C.) and a refractive index of 1.531, and is cured by irradiating it with a halogen lamp (integrated light amount 1 J / cm 2 ). Had a Shore A hardness of 65.

（２）第２の封止樹脂材料の調製
9,9-ビス(4-(2-アクリロキシエトキシ)フェニル)フルオレン（大阪ガスケミカル社、BPEF-A）４５重量部とパラクミルフェノキシアクリレート（東亞合成社、アロニックスM110）４５重量部とトリメチロールプロパントリアクリレート１０重量部を配合し、これに重合開始剤（チバイガイギースペシャリティーケミカルズ、ダロキュア1173）１重量部を加え、第２の封止樹脂材料とした。 (2) Preparation of second sealing resin material
9,9-bis (4- (2-acryloxyethoxy) phenyl) fluorene (Osaka Gas Chemical Co., BPEF-A) 45 parts by weight, paracumylphenoxy acrylate (Toagosei Co., Aronix M110) 45 parts by weight and trimethylol 10 parts by weight of propane triacrylate was blended, and 1 part by weight of a polymerization initiator (Ciba Geigy Specialty Chemicals, Darocur 1173) was added thereto to obtain a second sealing resin material.

得られた第２の封止樹脂材料は、粘度５０００ｍＰａ・Ｓ（２５℃）、屈折率１．５６５であり、それをハロゲンランプで照射（積算光量１Ｊ／ｃｍ2 ）して硬化させた硬化物は、ショアＡ硬度が９７であった。 The obtained second sealing resin material has a viscosity of 5000 mPa · S (25 ° C.) and a refractive index of 1.565, and is cured by irradiating it with a halogen lamp (integrated light amount 1 J / cm 2 ). Had a Shore A hardness of 97.

（３）ＬＥＤモジュールの製造
図９Ａ〜図９Ｇに示すように、ＬＥＤベアチップ２０を樹脂封止したＬＥＤモジュール４２を得た。 (3) Manufacture of LED Module As shown in FIGS. 9A to 9G, an LED module 42 in which the LED bare chip 20 was resin-sealed was obtained.

即ち、ポリイミドからなる両面フレキシブル基板１Ｂの片面をエッチングし、図９Ａに示す回路単位（４ｍｍ×４ｍｍ）を形成した。ここで、符号７ｂ、７ｃは電極であり、中央の電極７ｂはスルーホールにより裏面電極７ｄに接続した。   That is, one side of the double-sided flexible substrate 1B made of polyimide was etched to form a circuit unit (4 mm × 4 mm) shown in FIG. 9A. Here, reference numerals 7b and 7c are electrodes, and the central electrode 7b is connected to the back electrode 7d through a through hole.

次に、銀の蒸着により、電極７ｂの周りに反射面８を形成し（図９Ｂ）、さらにその反射面８の周りに撥油剤（３Ｍ社、ＥＧＣ−１７２０）３をコーティングした（図９Ｃ）。   Next, the reflective surface 8 was formed around the electrode 7b by vapor deposition of silver (FIG. 9B), and the oil repellent (3M Company, EGC-1720) 3 was coated around the reflective surface 8 (FIG. 9C). .

次に、エッチングにより片面に両電極を有する青色ＬＥＤベアチップ２０をフレキシブル基板１Ｂのエッチング面に搭載し、電極７ｂ、７ｃに接続した（図９Ｄ）。   Next, the blue LED bare chip 20 having both electrodes on one side was mounted on the etched surface of the flexible substrate 1B by etching and connected to the electrodes 7b and 7c (FIG. 9D).

次に、このフレキシブル基板１Ｂの真上に第１の封止樹脂材料３１0 をその直径が３ｍｍになるようにシリンジを用いて盛りつけ（図９Ｅ）、真空脱泡により気泡を取り除き、ＵＶを０．１Ｊ照射して半硬化させた。その後、直ちに第２の封止樹脂材料３２0 を第１の封止樹脂材料３１0 の上に、その直径が３．７５ｍｍとなるように盛りつけ（図９Ｆ）、６０℃１０分のアニーリングを行い、引き続き１ＪのＵＶを照射して第１の封止樹脂材料３１0 と第２の封止樹脂材料３２0 を完全に硬化させ、ＬＥＤモジュール４２を得た（図９Ｇ）。 Next, Serve using a syringe to the first encapsulation resin material 31 0 directly above the flexible substrate 1B whose diameter becomes 3 mm (Fig. 9E), removing air bubbles by vacuum degassing, the UV 0 Semi-cured by 1J irradiation. Immediately thereafter, the second sealing resin material 32 0 on the first encapsulation resin material 31 0, Serve as its diameter is 3.75 mm (FIG. 9F), perform annealing 60 ° C. 10 minutes , we continue to completely cure the first sealing resin material 31 0 and the second encapsulation resin material 32 0 irradiated with UV for 1 J, to afford the LED module 42 (FIG. 9G).

このＬＥＤモジュール４２の第１の封止材３１及び第２の封止材３２中の気泡の有無を光学顕微鏡により調べたところ、気泡は認められなかった。   When the presence or absence of bubbles in the first sealing material 31 and the second sealing material 32 of the LED module 42 was examined with an optical microscope, no bubbles were recognized.

また、光の取り出し総量を積分球による総光量の測定により調べたところ、ベアチップの１．７５倍であった。   Further, when the total amount of light extracted was measured by measuring the total light amount using an integrating sphere, it was 1.75 times that of the bare chip.

比較例２
実施例２において、第２の封止樹脂材料３２0 を第１の封止樹脂材料３１0 の上に盛りつけた後、アニーリングを行うことなく、直ちに双方の封止樹脂材料を完全硬化させた以外は、実施例２と同様にしてＬＥＤモジュールを作製した。 Comparative Example 2
In Example 2, except the second encapsulation resin material 32 0 After dished on the first encapsulation resin material 31 0, without performing annealing, in which immediately completely cure both the encapsulation resin material Produced an LED module in the same manner as in Example 2.

このＬＥＤモジュールの光の取り出し総量を、積分球による総光量の測定により調べたところ、ベアチップの１．６５倍でであった。   When the total amount of light extracted from this LED module was examined by measuring the total amount of light with an integrating sphere, it was 1.65 times that of the bare chip.

実施例３
実施例２と同様の回路単位を、縦３個、横４個、合計１２個配列したフレキシブル回路基板１Ｃを作製した。各回路単位に実施例２と同様にして、ＬＥＤベアチップ２０を搭載し、第１の封止樹脂材料と第２の封止樹脂材料を順次盛りつけ、アニーリング後、硬化させることにより図１０に示すようにアレイ状のＬＥＤモジュール４３を作製した。 Example 3
A flexible circuit board 1 </ b> C in which 12 circuit units similar to Example 2 were arranged in a total of 12 vertically and 4 horizontally was manufactured. As shown in FIG. 10, the LED bare chip 20 is mounted in each circuit unit, the first sealing resin material and the second sealing resin material are sequentially arranged, annealed, and cured. An arrayed LED module 43 was produced.

このＬＥＤモジュール４３中の各ＬＥＤの光取り出し総量はベアチップに対して平均で１．７５倍であった。   The total light extraction amount of each LED in the LED module 43 was 1.75 times on average with respect to the bare chip.

本発明の発光素子モジュールの製造方法は、ＬＥＤ、半導体レーザ、ＥＬ素子等の発光素子を樹脂封止する方法として有用であり、それにより得られた発光素子モジュールは、フラットパネルのバックライト、信号機、光通信等種々の分野で使用される。   The method for producing a light emitting element module of the present invention is useful as a resin sealing method for light emitting elements such as LEDs, semiconductor lasers, EL elements, etc. Used in various fields such as optical communication.

ＬＥＤモジュールの断面図である。It is sectional drawing of an LED module. ＬＥＤモジュールの断面図である。It is sectional drawing of an LED module. ＬＥＤモジュールの断面図である。It is sectional drawing of an LED module. ＬＥＤモジュールの断面図である。It is sectional drawing of an LED module. ＬＥＤモジュールの断面図である。It is sectional drawing of an LED module. ＬＥＤモジュールの断面図である。It is sectional drawing of an LED module. ＬＥＤモジュールの断面図である。It is sectional drawing of an LED module. 実施例１のＬＥＤモジュールの製造工程中の平面図及び断面図である。FIG. 6 is a plan view and a cross-sectional view of the LED module of Example 1 during the manufacturing process. 実施例１のＬＥＤモジュールの製造工程中の平面図及び断面図である。FIG. 6 is a plan view and a cross-sectional view of the LED module of Example 1 during the manufacturing process. 実施例１のＬＥＤモジュールの製造工程中の平面図及び断面図である。FIG. 6 is a plan view and a cross-sectional view of the LED module of Example 1 during the manufacturing process. 実施例１のＬＥＤモジュールの製造工程中の断面図である。FIG. 6 is a cross-sectional view of the LED module of Example 1 during the manufacturing process. 実施例１のＬＥＤモジュールの製造工程中の断面図である。FIG. 6 is a cross-sectional view of the LED module of Example 1 during the manufacturing process. 実施例１のＬＥＤモジュールの製造工程中の断面図である。FIG. 6 is a cross-sectional view of the LED module of Example 1 during the manufacturing process. 実施例２のＬＥＤモジュールの製造工程中の平面図及び断面図である。FIG. 7 is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process. 実施例２のＬＥＤモジュールの製造工程中の平面図である。FIG. 10 is a plan view of the LED module of Example 2 during the manufacturing process. 実施例２のＬＥＤモジュールの製造工程中の平面図である。FIG. 10 is a plan view of the LED module of Example 2 during the manufacturing process. 実施例２のＬＥＤモジュールの製造工程中の平面図及び断面図である。FIG. 7 is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process. 実施例２のＬＥＤモジュールの製造工程中の平面図及び断面図である。FIG. 7 is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process. 実施例２のＬＥＤモジュールの製造工程中の平面図及び断面図である。FIG. 7 is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process. 実施例２のＬＥＤモジュールの製造工程中の平面図及び断面図である。FIG. 7 is a plan view and a cross-sectional view of the LED module of Example 2 during the manufacturing process. 実施例３のＬＥＤモジュールの平面図である。6 is a plan view of an LED module of Example 3. FIG. 評価用モジュールの断面図である。It is sectional drawing of the module for evaluation. 界面のぼかしの程度の評価方法の説明図である。It is explanatory drawing of the evaluation method of the grade of the blurring of an interface.

符号の説明Explanation of symbols

１ 基体
１Ａ 基体
１Ｂ フレキシブル基板
２ 環状凸部
３ 撥油処理層又は撥油剤
４ 銅製の円柱
５ａ、５ｂ 三角溝
６ 溝
７ 電極
７ａ 電極
７ｂ 電極
７ｃ 電極
７ｄ 裏面電極
８ 反射面
２０ ＬＥＤ又はＬＥＤベアチップ
２１ 金線
３１ 第１の封止材
３１0 第１の封止樹脂材料
３２ 第２の封止材
３２0 第２の封止樹脂材料
３３ 第１の封止材と第２の封止材の界面
３３0 第１の封止樹脂材料と第２の封止樹脂材料の界面
４０、４１、４２、４３ ＬＥＤモジュール
５０ 評価用モジュール
DESCRIPTION OF SYMBOLS 1 Substrate 1A Base 1B Flexible substrate 2 Annular convex part 3 Oil-repellent treatment layer or oil-repellent agent 4 Copper cylinder 5a, 5b Triangular groove 6 Groove 7 Electrode 7a Electrode 7b Electrode 7c Electrode 7d Back surface electrode 8 Reflecting surface 20 LED or LED bare chip 21 Gold wire 31 1st sealing material 31 0 1st sealing resin material 32 2nd sealing material 32 0 2nd sealing resin material 33 Interface of 1st sealing material and 2nd sealing material 33 0 the first encapsulation resin material and a surface 40, 41, 42, 43 LED modules 50 evaluation module of the second encapsulation resin material

Claims (5)

基体に発光素子を搭載し、その上に、第１の封止材の未硬化物であるＵＶ硬化性の第１の封止樹脂材料を塗布し、ＵＶ照射により半硬化させた後、第２の封止材の未硬化物であるＵＶ硬化性の第２の封止樹脂材料を順次塗布し、４０〜１２０℃で数分〜数時間おく加熱アニーリングを行うことにより第１の封止樹脂材料と第２の封止樹脂材料の界面をぼかし、その後、第１の封止樹脂材料と第２の封止樹脂材料を完全に硬化させる発光素子モジュールの製造方法。   A light-emitting element is mounted on a substrate, and a UV curable first sealing resin material, which is an uncured material of the first sealing material, is applied thereon and semi-cured by UV irradiation. The first sealing resin material is obtained by sequentially applying the UV curable second sealing resin material, which is an uncured material of the sealing material, and performing heating annealing at 40 to 120 ° C. for several minutes to several hours. And the second sealing resin material are blurred, and then the first sealing resin material and the second sealing resin material are completely cured. 基体が、第１の封止材の周縁部を囲む領域と第２の封止材の周縁部を囲む領域に、それぞれ環状凸部を有する請求項１記載の発光素子モジュールの製造方法。   The method of manufacturing a light emitting element module according to claim 1, wherein the base has annular convex portions in a region surrounding the peripheral portion of the first sealing material and a region surrounding the peripheral portion of the second sealing material. 環状凸部が二重の斜面又は垂直面からなる請求項２記載の発光素子モジュールの製造方法。   The method for manufacturing a light emitting element module according to claim 2, wherein the annular convex portion is a double inclined surface or a vertical surface. 基体表面の発光素子を囲む領域に撥油処理を行い、その後、第１の封止樹脂材料及び第２の封止樹脂材料を順次塗布する請求項１〜３のいずれかに記載の発光素子モジュールの製造方法。   The light emitting element module according to any one of claims 1 to 3, wherein an oil repellent treatment is performed on a region surrounding the light emitting element on the surface of the substrate, and then the first sealing resin material and the second sealing resin material are sequentially applied. Manufacturing method. 第１の封止樹脂材料の粘度（２５℃）が５０Ｐａ・Ｓ以下、その硬化物のショアＡ硬度が７０以下であり、第２の封止樹脂材料の粘度（２５℃）が０．１〜１０００Ｐａ・Ｓ、その硬化物のショアＡ硬度が５０以上である請求項１〜４のいずれかに記載の発光素子モジュールの製造方法。   The viscosity (25 ° C.) of the first sealing resin material is 50 Pa · S or less, the Shore A hardness of the cured product is 70 or less, and the viscosity (25 ° C.) of the second sealing resin material is 0.1 to 0.1 The method for producing a light emitting element module according to claim 1, wherein the cured product has a Shore A hardness of 50 or more.
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JP2004087812A (en) * 2002-08-27 2004-03-18 Sanyo Electric Co Ltd Light emitting device
JP4599857B2 (en) * 2003-04-24 2010-12-15 日亜化学工業株式会社 Semiconductor device and manufacturing method thereof
JP4634810B2 (en) * 2005-01-20 2011-02-16 信越化学工業株式会社 Silicone sealed LED

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