JP2007324213A - Semiconductor display device - Google Patents

Semiconductor display device Download PDF

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JP2007324213A
JP2007324213A JP2006150149A JP2006150149A JP2007324213A JP 2007324213 A JP2007324213 A JP 2007324213A JP 2006150149 A JP2006150149 A JP 2006150149A JP 2006150149 A JP2006150149 A JP 2006150149A JP 2007324213 A JP2007324213 A JP 2007324213A
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sealing resin
light emitting
emitting element
resin
display device
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Kazuyuki Iwasaki
和行 岩崎
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor display device which hardly causes a failure in electrical characteristics and is kept high in reliability, even both in a high-temperature environment where the device is installed and in a high-temperature state in which the device is actually used. <P>SOLUTION: A nearly rectangular parallelepipedic lamp house 1 has a plurality of segment holes 8 formed at prescribed positions on its top side and an opening 7 formed at its bottom side; a lead frame 2 mounted with a semiconductor light emitting element 3 arranged at a position corresponding to each of the segment holes 8 in the lamp house 1; a first sealing resin 5 composed of a transparent resin and a dispersing agent mixed therein filling the lamp house 1 to seal up the vicinity of the house with resin where the light emitting element 3, a bonding wire 4, and a surrounding area where the semiconductor light emitting element 3 and bonding wire 4 are mounted; and furthermore the lamp house 1 is filled up with a second sealing resin 6 higher in the concentration of a dispersing agent than the first sealing resin 5 so as to cover the first sealing resin 5. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体表示装置に関するものであり、詳しくは、バー表示、レベル表示、数字表示、ドットマトリックス表示、面表示等に使用される、半導体発光素子を光源とする半導体表示装置に関する。   The present invention relates to a semiconductor display device, and more particularly to a semiconductor display device using a semiconductor light emitting element as a light source, which is used for bar display, level display, numerical display, dot matrix display, surface display, and the like.

従来、この種の半導体表示装置には以下のようなものがある。それは、図７に示すように、夫々内周面を反射面５０とする複数のセグメント孔５１が所定の位置に配設された反射板５２に透光性樹脂５３が充填され、各セグメント孔５１に対応する位置に発光ダイオード５４を実装したリードフレーム５５が透光性樹脂５３内に埋設されていると共に、反射板５２の裏面側の透光性樹脂５３表面には黒色被膜５６が設けられている。   Conventionally, this type of semiconductor display device includes the following. As shown in FIG. 7, a translucent resin 53 is filled in a reflecting plate 52 in which a plurality of segment holes 51 each having an inner peripheral surface as a reflecting surface 50 are disposed at predetermined positions. A lead frame 55 in which a light emitting diode 54 is mounted at a position corresponding to is embedded in the translucent resin 53, and a black film 56 is provided on the surface of the translucent resin 53 on the back side of the reflector 52. Yes.

上記構成の半導体表示装置において、いずれか一方の発光ダイオード５４が点灯状態、他方の発光ダイオード５４が消灯状態にある場合、点灯状態の発光ダイオード５４から出射して透光性樹脂５３内に導入された光の一部は、矢印Ｂ方向に導光されてセグメント孔５１から外部に照射される。   In the semiconductor display device having the above-described configuration, when any one of the light-emitting diodes 54 is in a lighted state and the other light-emitting diode 54 is in a light-off state, the light-emitting diodes 54 are emitted from the lighted state and introduced into the translucent resin 53. A part of the light is guided in the direction of arrow B and irradiated to the outside from the segment hole 51.

同様に、点灯状態の発光ダイオード５４から出射して透光性樹脂５３内に導入された光の一部は、漏光となって反射板５２とリードフレーム５５との間隔５７内およびリードフレーム５５間の間隔５８を介してリードフレーム５５と黒色被膜５６との間の薄層５９内を導光される。   Similarly, part of the light emitted from the light-emitting diode 54 that has been turned on and introduced into the translucent resin 53 becomes light leakage, and within the interval 57 between the reflector 52 and the lead frame 55 and between the lead frames 55. The light is guided in the thin layer 59 between the lead frame 55 and the black coating 56 through the gap 58.

このとき、薄層５９内を導光された光は黒色被膜５６で吸収されるため、隣接するセグメント孔５１に至る漏光は反射板５２とリードフレーム５５との間隔５７内を導光された矢印Ｃで示す僅かな量である。よって、隣接するセグメント孔５１への光の漏洩を確実に防止できる、というものである（例えば、特許文献１参照。）。
特広平７−９２６４２号公報 At this time, since the light guided in the thin layer 59 is absorbed by the black film 56, the leakage light reaching the adjacent segment hole 51 is guided in the space 57 between the reflector 52 and the lead frame 55. This is a slight amount indicated by C. Therefore, leakage of light to the adjacent segment holes 51 can be reliably prevented (see, for example, Patent Document 1).
Japanese Patent Publication No. 7-92642

ところで、透光性樹脂と該透光性樹脂に埋設されたリードフレームとは線膨張係数が大きく異なり、透光性樹脂の線膨張係数はリードフレームの５倍以上となっている。そのため、従来の半導体表示装置をマザー基板にはんだ実装する場合、透光性樹脂とリードフレームとの線膨張係数の差に起因する熱応力によってリードフレームに実装された発光ダイオードに架空配線したボンディングワイヤ（図７では図示されていない）に変形や断線等の不具合が発生し、電気的特性不良に至る可能性がある。   By the way, the linear expansion coefficient of the translucent resin and the lead frame embedded in the translucent resin are greatly different, and the linear expansion coefficient of the translucent resin is 5 times or more that of the lead frame. Therefore, when solder-mounting a conventional semiconductor display device to a mother board, a bonding wire overlaid on a light-emitting diode mounted on the lead frame due to thermal stress caused by the difference in coefficient of linear expansion between the translucent resin and the lead frame (Not shown in FIG. 7), defects such as deformation and disconnection may occur, leading to poor electrical characteristics.

また、マザー基板実装後においても、半導体表示装置の点滅の繰り返しによる温度変化によって透光性樹脂が膨張収縮を繰り返し、そのときの熱応力も上記同様の作用を及ぼして電気的特性不良に至る可能性がある。   In addition, even after the mother board is mounted, the translucent resin repeatedly expands and contracts due to temperature changes caused by repeated blinking of the semiconductor display device, and the thermal stress at that time also exerts the same effect as described above, leading to poor electrical characteristics. There is sex.

特に、近年では鉛フリーはんだ実装に伴ってはんだ付け温度が上昇しており、従来の構成の半導体表示装置では熱耐力が追随しきれない状態が生じている。熱容量の小さい小型化された半導体表示装置においては益々熱による悪影響は避けられない状況となっている。   In particular, in recent years, the soldering temperature has increased along with lead-free solder mounting, and a semiconductor display device having a conventional configuration has a state in which the heat resistance cannot follow. In a miniaturized semiconductor display device having a small heat capacity, an adverse effect due to heat is increasingly unavoidable.

そこで、本発明は上記問題に鑑みて創案なされたもので、その目的とするところは、高温の実装環境下及び実使用状態に於いて、電気的特性不良を生じない信頼性の高い半導体表示装置を提供することにある。   Accordingly, the present invention was devised in view of the above problems, and an object of the present invention is to provide a highly reliable semiconductor display device that does not cause an electrical characteristic defect in a high-temperature mounting environment and in an actual use state. Is to provide.

上記課題を解決するために、本発明の請求項１に記載された発明は、導電体の上に少なくとも１個の半導体発光素子が実装され、前記半導体発光素子および前記導電体の前記半導体発光素子が実装された近傍が第一の封止樹脂で覆われるように樹脂封止され、前記第一の封止樹脂の前記半導体発光素子の光出射方向と反対側の面上に第二の封止樹脂が配置されてなる半導体表示装置であって、前記第一の封止樹脂および前記第二の封止樹脂はともに同一成分からなり、前記第二の封止樹脂は前記第一の封止樹脂よりも弾性が高いことを特徴とするものである。   In order to solve the above-described problems, according to a first aspect of the present invention, at least one semiconductor light emitting element is mounted on a conductor, and the semiconductor light emitting element and the semiconductor light emitting element of the conductor are provided. Is sealed with a first sealing resin so that the vicinity of the first sealing resin is covered with a second sealing material on the surface opposite to the light emitting direction of the semiconductor light emitting element of the first sealing resin. A semiconductor display device in which a resin is arranged, wherein the first sealing resin and the second sealing resin are both made of the same component, and the second sealing resin is the first sealing resin. It is characterized by higher elasticity than the above.

本発明の請求項２に記載された発明は、請求項１において、前記第一の封止樹脂および前記第二の封止樹脂ともに拡散剤を含有し、前記第二の封止樹脂は前記第一の封止樹脂よりも前記拡散剤の濃度が高いことを特徴とするものである。   The invention described in claim 2 of the present invention is that in claim 1, the first sealing resin and the second sealing resin both contain a diffusing agent, and the second sealing resin is the first sealing resin. The concentration of the diffusing agent is higher than that of one sealing resin.

本発明の請求項３に記載された発明は、請求項２において、前記第二の封止樹脂が含有する拡散剤の濃度が３０〜４０ｗｔ％であることを特徴とするものである。   The invention described in claim 3 of the present invention is characterized in that, in claim 2, the concentration of the diffusing agent contained in the second sealing resin is 30 to 40 wt%.

本発明の請求項４に記載された発明は、請求項２または３のいずれか１項において、前記拡散剤がガラスフィラーおよびシリカのうちのいずれか一方であることを特徴とするものである。   The invention described in claim 4 of the present invention is characterized in that, in any one of claims 2 and 3, the diffusing agent is one of a glass filler and silica.

本発明の半導体発光装置は、導電体の上に少なくとも１個の半導体発光素子を実装し、前記半導体発光素子および前記導電体の前記半導体発光素子を実装した近傍を第一の封止樹脂で樹脂封止し、前記第一の封止樹脂の前記半導体発光素子の光出射方向と反対側の面と界面を形成するように、前記第一の封止樹脂よりも弾性が高い第二の封止樹脂を配置した。   In the semiconductor light emitting device of the present invention, at least one semiconductor light emitting element is mounted on a conductor, and the vicinity of the semiconductor light emitting element and the conductor on which the semiconductor light emitting element is mounted is resinized with a first sealing resin. A second sealing having higher elasticity than the first sealing resin so as to form an interface with the surface opposite to the light emitting direction of the semiconductor light emitting element of the first sealing resin. Resin was placed.

その結果、加熱時あるいは温度変化の環境下において、第一の封止樹脂の熱応力による導電体の移動量が第二の封止樹脂で抑制され、半導体発光素子やボンディングワイヤの異常な動きにより生じる不具合を低減することができる。   As a result, the amount of movement of the conductor due to the thermal stress of the first sealing resin is suppressed by the second sealing resin in the environment of heating or temperature change, and due to abnormal movement of the semiconductor light emitting element or bonding wire The trouble which arises can be reduced.

また、第一の封止樹脂を一次硬化と二次硬化の２段階を踏んで硬化させたことにより第一の封止樹脂に内在する応力を低減することができ、このことも半導体発光素子およびボンディングワイヤの不具合の発生要因を低減させるものである。   Moreover, the stress inherent in the first sealing resin can be reduced by curing the first sealing resin through two steps of primary curing and secondary curing. This is to reduce the cause of bonding wire defects.

本発明の実施形態を図１〜図６を参照しながら詳細に説明する。尚、以下に述べる実施形態は、本発明の好適な具体例であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの実施形態に限られるものではない。   An embodiment of the present invention will be described in detail with reference to FIGS. The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

図１は本発明の半導体表示装置に係わる実施形態の斜視図、図２は図１のＡ−Ａ断面図である。本実施形態は主にランプハウス１、リードフレーム２、半導体発光素子３、ボンディングワイヤ４、第一の封止樹脂５および第二の封止樹脂６で構成されている。   FIG. 1 is a perspective view of an embodiment of a semiconductor display device according to the present invention, and FIG. 2 is a cross-sectional view taken along line AA of FIG. The present embodiment mainly includes a lamp house 1, a lead frame 2, a semiconductor light emitting element 3, a bonding wire 4, a first sealing resin 5 and a second sealing resin 6.

ランプハウス１は反射性および遮光性を有する樹脂材料からなり、下面側を開口７とした略直方体形状を呈している。そして、上面側には複数のセグメント孔８が所定の位置に配設され、各セグメント孔８の内周面９は反射面となっている。   The lamp house 1 is made of a resin material having reflectivity and light shielding properties, and has a substantially rectangular parallelepiped shape with an opening 7 on the lower surface side. A plurality of segment holes 8 are arranged at predetermined positions on the upper surface side, and the inner peripheral surface 9 of each segment hole 8 is a reflecting surface.

リードフレーム２は金属材料からなり、略コ字形状を呈している。そして、ランプハウス１内のセグメント孔８底部に位置し、各セグメント孔８に対応する位置にははんだ等の導電性接合部材１０を介してＬＥＤ等の半導体発光素子３が載設され、半導体発光素子３の一方の電極と前記半導体発光素子３が載設されたリードフレーム２との電気的導通が図られている。   The lead frame 2 is made of a metal material and has a substantially U shape. A semiconductor light emitting element 3 such as an LED is mounted on the bottom of the segment hole 8 in the lamp house 1 via a conductive bonding member 10 such as solder at a position corresponding to each segment hole 8. Electrical continuity is achieved between one electrode of the element 3 and the lead frame 2 on which the semiconductor light emitting element 3 is mounted.

また、半導体発光素子３の他方の電極と上記半導体発光素子３が載設されたリードフレーム２とは分離・独立した他のリードフレーム２とがボンディングワイヤ４を介して電気的導通が図られている。   In addition, the other electrode of the semiconductor light emitting element 3 and another lead frame 2 separated from and independent from the lead frame 2 on which the semiconductor light emitting element 3 is mounted are electrically connected via the bonding wire 4. Yes.

そして、セグメント孔８を含むランプハウス１内に第一の封止樹脂５が充填され、該第一の封止樹脂５によって各半導体発光素子３、ボンディングワイヤ４およびリードフレーム２の前記半導体発光素子３が載設され且つ前記ボンディングワイヤ４が架空配線された近傍が樹脂封止されている。特に、セグメント孔８内に充填された第一の封止樹脂５はランプハウス１の上面１１と略面一となっている。   The lamp house 1 including the segment holes 8 is filled with the first sealing resin 5, and the semiconductor light emitting elements 3, the bonding wires 4, and the lead frame 2 are filled with the first sealing resin 5. 3 and the vicinity where the bonding wire 4 is aerial wired is sealed with resin. In particular, the first sealing resin 5 filled in the segment holes 8 is substantially flush with the upper surface 11 of the lamp house 1.

第一の封止樹脂５は、透光性樹脂にガラスフィラーあるいはシリカ等からなる拡散剤が混入されてなり、この場合、第一の封止樹脂５の拡散剤配合比（濃度）は約５ｗｔ％が好ましい。   The first sealing resin 5 is formed by mixing a diffusing agent made of glass filler, silica, or the like into a translucent resin. In this case, the diffusing agent blending ratio (concentration) of the first sealing resin 5 is about 5 wt. % Is preferred.

更に、ランプハウス１内には上記第一の封止樹脂５を覆うように第二の封止樹脂６が充填されている。なお、第二の封止樹脂６は第一の封止樹脂５と構成材料は同様で拡散剤濃度だけが異なり、第二の封止樹脂６は第一の封止樹脂５よりも拡散剤濃度を高く設定している。   Further, the lamp house 1 is filled with a second sealing resin 6 so as to cover the first sealing resin 5. Note that the second sealing resin 6 is the same as the first sealing resin 5 in the constituent material and only the diffusing agent concentration is different. The second sealing resin 6 has a diffusing agent concentration higher than that of the first sealing resin 5. Is set high.

次に、本実施形態の製造方法について図３を参照して説明する。まず、（ａ）の工程において、ランプハウス１を裏返して開口７を上に向け、ランプハウス１の上面１１を封止樹脂漏れ止め用テープ１５に貼り付ける。   Next, the manufacturing method of this embodiment is demonstrated with reference to FIG. First, in the step (a), the lamp house 1 is turned over so that the opening 7 faces upward, and the upper surface 11 of the lamp house 1 is attached to the sealing resin leakage preventing tape 15.

（ｂ）の工程において、ランプハウス１内に第一の封止樹脂５を注入してランプハウス１内の途中まで満たす。   In the step (b), the first sealing resin 5 is injected into the lamp house 1 to fill the lamp house 1 halfway.

（ｃ）の工程において、半導体発光素子３を実装したリードフレーム２を液状の第一の封止樹脂５内に沈めてセグメント孔８の底部に位置させ、本来の硬化温度よりも低い温度（８０〜１００℃）で加熱して第一の封止樹脂５を一次硬化させる。   In the step (c), the lead frame 2 on which the semiconductor light emitting element 3 is mounted is submerged in the liquid first sealing resin 5 and positioned at the bottom of the segment hole 8, and the temperature is lower than the original curing temperature (80 The first sealing resin 5 is primarily cured by heating at ~ 100 ° C.

（ｄ）の工程において、第二の封止樹脂６をランプハウス１内に注入してランプハウス１から漏れ出さない程度に満たし、一次硬化よりも高い本来の硬化温度（１１０〜１３０°）で加熱して第二の封止樹脂６を硬化させると共に第一の封止樹脂５を二次硬化させる。   In the step (d), the second sealing resin 6 is injected into the lamp house 1 so as not to leak from the lamp house 1, and at an original curing temperature (110 to 130 °) higher than the primary curing. The second sealing resin 6 is cured by heating and the first sealing resin 5 is secondarily cured.

（ｅ）の工程において、ランプハウス１を封止樹脂漏れ止め用テープ１５から剥がすと半導体表示装置が完成する。   In the step (e), when the lamp house 1 is peeled off from the sealing resin leakage preventing tape 15, the semiconductor display device is completed.

ところで、上記「発明が解決しようとする課題」のなかで述べたように、半導体発光素子が実装されたリードフレームが封止樹脂で樹脂封止されている場合、何らかの理由で加熱されたり、温度変化が加わったときに封止樹脂とリードフレームとの線膨張係数の差に起因する熱応力によってリードフレームに実装された半導体発光素子に架空配線したボンディングワイヤに変形や断線等の不具合が発生し、電気的特性不良に至る可能性がある。   By the way, as described in the above “problem to be solved by the invention”, when the lead frame on which the semiconductor light emitting element is mounted is resin-sealed with a sealing resin, it is heated for some reason, When changes are made, defects such as deformation and disconnection occur in the bonding wires overlaid on the semiconductor light emitting device mounted on the lead frame due to the thermal stress caused by the difference in coefficient of linear expansion between the sealing resin and the lead frame. This may lead to poor electrical characteristics.

そこで、本発明は上記問題を解決するために、透光性樹脂および拡散剤で構成される封止樹脂は、拡散剤濃度が高くなるほど線膨張係数が小さくなってリードフレームの線膨張係数に近づくと共に、弾性率が大きくなって剛性が向上するという点に注目し、半導体発光素子とリードフレームの前記半導体素子が実装された近傍とを拡散剤の混入濃度の低い第一の封止樹脂で樹脂封止し、更に第一の封止樹脂の上に第一の封止樹脂の拡散剤混入濃度よりも高い濃度で拡散剤を混入した第二の封止樹脂を充填してリードフレームの一部を覆うようにした。   Therefore, in order to solve the above problems, the sealing resin composed of a translucent resin and a diffusing agent has a linear expansion coefficient that decreases as the diffusing agent concentration increases, and approaches the linear expansion coefficient of the lead frame. At the same time, paying attention to the fact that the elastic modulus is increased and the rigidity is improved, the semiconductor light emitting element and the vicinity of the lead frame where the semiconductor element is mounted are resinated with a first sealing resin having a low concentration of diffusing agent. A part of the lead frame is sealed and filled with a second sealing resin mixed with a diffusing agent at a concentration higher than the concentration of the diffusing agent in the first sealing resin on the first sealing resin. To cover.

その結果、加熱時あるいは温度変化の環境下において、第一の封止樹脂の熱応力によるリードフレームの移動量が第二の封止樹脂で抑制され、半導体発光素子やボンディングワイヤの異常な動きにより生じる不具合を低減することができる。   As a result, the amount of movement of the lead frame due to the thermal stress of the first sealing resin is suppressed by the second sealing resin during heating or under a temperature change environment, and the abnormal movement of the semiconductor light emitting element or bonding wire The trouble which arises can be reduced.

また、第一の封止樹脂を一次硬化と二次硬化の２段階を踏んで硬化させたことにより第一の封止樹脂に内在する応力を低減することができ、このことも半導体発光素子およびボンディングワイヤの不具合の発生要因を低減させるものである。   Moreover, the stress inherent in the first sealing resin can be reduced by curing the first sealing resin through two steps of primary curing and secondary curing. This is to reduce the cause of bonding wire defects.

つまり、第一の封止樹脂に混入する拡散剤の濃度は光学的な観点から設定され、第二の封止樹脂の濃度は物性的な観点から設定される。そのため、封止樹脂を２層構造にした効果は大きく、しかも第一の封止樹脂と第二の封止樹脂とは構成材料が同一であるために互いの界面での剥離がほとんどなく、信頼性に悪影響を及ぼすようなことはない。   That is, the concentration of the diffusing agent mixed in the first sealing resin is set from an optical viewpoint, and the concentration of the second sealing resin is set from a physical viewpoint. Therefore, the effect of the sealing resin having a two-layer structure is great, and since the first sealing resin and the second sealing resin are made of the same constituent material, there is almost no peeling at the interface between them. There is no negative effect on sex.

図４および図５は第二の封止樹脂に混入する拡散剤の濃度と汎用鉛フリーディップ装置によるはんだ実装実験による第二の封止樹脂のクラックの発生状況および製造時の第二の封止樹脂の作業性との関係を物性値の変化と共に表したものである。図４は拡散剤がガラスフィラーの場合、図５は拡散剤がシリカの場合を示している。   4 and 5 show the concentration of the diffusing agent mixed in the second sealing resin, the occurrence of cracks in the second sealing resin by a solder mounting experiment using a general-purpose lead-free dipping device, and the second sealing at the time of manufacture. The relationship with the workability of the resin is shown together with the change in the physical property value. 4 shows a case where the diffusing agent is a glass filler, and FIG. 5 shows a case where the diffusing agent is silica.

図４より、第二の封止樹脂の物性値に顕著な変化（特に、線膨張係数が小さくなってリードフレームの線膨張係数に近づくと共に硬度が上昇する）が現われるのは拡散剤（ガラスフィラー）の濃度が３０ｗｔ％以上になったときであり、濃度が４０ｗｔ％を超えるとクラックが発生し、粘度も高くなって製造時の作業性も悪くなる。   From FIG. 4, a noticeable change in the physical property value of the second sealing resin (particularly, the linear expansion coefficient decreases and the hardness increases as it approaches the linear expansion coefficient of the lead frame) appears. ) When the concentration exceeds 30 wt%, if the concentration exceeds 40 wt%, cracks occur, the viscosity increases, and the workability during production deteriorates.

よって、透光性樹脂および拡散剤となるガラスフィラーからなる第二の封止樹脂において、ガラスフィラーの濃度は３０〜４０ｗｔ％が好ましいことがわかる。   Therefore, it can be seen that the concentration of the glass filler is preferably 30 to 40 wt% in the second sealing resin composed of the translucent resin and the glass filler serving as the diffusing agent.

また図５より、シリカを拡散剤として混入した第二の封止樹脂は上記ガラスフィラーを混入した第二の封止樹脂よりも物性値は劣るが（特に、線膨張係数が大きい）、全体的には上記ガラスフィラーを混入した第二の封止樹脂と同様の効果が期待できる値を示している。   From FIG. 5, the second sealing resin mixed with silica as a diffusing agent is inferior in physical properties to the second sealing resin mixed with the glass filler (particularly, the linear expansion coefficient is large), but overall Shows a value at which the same effect as the second sealing resin mixed with the glass filler can be expected.

但し、拡散剤の濃度が高すぎると図４および図５でわかるように脆くなってクラックが生じると共に粘度が高くなって製造時の作業性が低下する。   However, if the concentration of the diffusing agent is too high, it becomes brittle and cracks occur as shown in FIGS. 4 and 5, and the viscosity becomes high and the workability during production is lowered.

本実施形態では導電材料にリードフレームを採用して該リードフレームに半導体発光素子を実装したが、図６に示すように表面に回路パターン１２を設けたリードピン１３付きのプリント基板１４等、リードフレームに限らず様々な導電部材が使用できる。   In this embodiment, a lead frame is adopted as a conductive material and a semiconductor light emitting element is mounted on the lead frame. However, as shown in FIG. 6, a printed circuit board 14 with a lead pin 13 provided with a circuit pattern 12 on the surface, etc. Not limited to this, various conductive members can be used.

上述した実施形態は図２のように数字表示装置を例にとって説明したが、構成が同様なものであれば数字表示装置に限らず各種用途の表示装置に適応可能である。   The above-described embodiment has been described by taking the numerical display device as an example as shown in FIG. 2, but the present invention can be applied not only to the numerical display device but also to display devices for various uses as long as the configuration is the same.

上述した本発明の半導体表示素子は従来の半導体表示素子と同様の材料で構成でき、構成部品も増えることがない。そのため従来の製造設備がそのまま使用でき、新規の設備投資の必要がない。また、製品の寸法、重量も従来とほとんど変わらないために、ユーザにとっても使い勝手のよいものとなっている。   The semiconductor display element of the present invention described above can be made of the same material as that of the conventional semiconductor display element, and the number of components does not increase. Therefore, conventional manufacturing equipment can be used as it is, and there is no need for new equipment investment. In addition, since the size and weight of the product are almost the same as the conventional one, it is easy for the user to use.

本発明の半導体表示装置に係わる実施形態の斜視図である。It is a perspective view of the embodiment concerning the semiconductor display device of the present invention. 図１のＡ−Ａ断面図である。It is AA sectional drawing of FIG. 本発明の半導体表示装置に係わる製造工程図である。It is a manufacturing process figure concerning the semiconductor display device of this invention. 本発明の半導体表示装置の試験結果を示すデータシートである。It is a data sheet which shows the test result of the semiconductor display apparatus of this invention. 本発明の半導体発光装置の他の試験結果を示すデータシートである。It is a data sheet which shows the other test result of the semiconductor light-emitting device of this invention. 本発明の半導体表示装置に係わる他の実施形態の断面図である。It is sectional drawing of other embodiment concerning the semiconductor display apparatus of this invention. 従来例の半導体表示装置の断面図である。It is sectional drawing of the semiconductor display apparatus of a prior art example.

符号の説明Explanation of symbols

１ ランプハウス
２ リードフレーム
３ 半導体発光素子
４ ボンディングワイヤ
５ 第一の封止樹脂
６ 第二の封止樹脂
７ 開口
８ セグメント孔
９ 内周面
１０ 導電性接合部材
１１ 上面
１２ 配線パターン
１３ リードピン
１４ プリント基板
１５ 封止樹脂漏れ止め用テープ DESCRIPTION OF SYMBOLS 1 Lamphouse 2 Lead frame 3 Semiconductor light emitting element 4 Bonding wire 5 1st sealing resin 6 2nd sealing resin 7 Opening 8 Segment hole 9 Inner peripheral surface 10 Conductive joining member 11 Upper surface 12 Wiring pattern 13 Lead pin 14 Print Substrate 15 Tape for sealing resin leakage prevention

Claims (4)

導電体の上に少なくとも１個の半導体発光素子が実装され、前記半導体発光素子および前記導電体の前記半導体発光素子が実装された近傍が第一の封止樹脂で覆われるように樹脂封止され、前記第一の封止樹脂の前記半導体発光素子の光出射方向と反対側の面上に第二の封止樹脂が配置されてなる半導体表示装置であって、前記第一の封止樹脂および前記第二の封止樹脂はともに同一成分からなり、前記第二の封止樹脂は前記第一の封止樹脂よりも弾性が高いことを特徴とする半導体表示装置。   At least one semiconductor light emitting element is mounted on the conductor, and resin-sealed so that the semiconductor light-emitting element and the vicinity of the conductor on which the semiconductor light-emitting element is mounted are covered with a first sealing resin. A semiconductor display device in which a second sealing resin is disposed on a surface of the first sealing resin opposite to the light emitting direction of the semiconductor light emitting element, wherein the first sealing resin and the first sealing resin Both said 2nd sealing resin consists of the same component, and said 2nd sealing resin has elasticity higher than said 1st sealing resin, The semiconductor display device characterized by the above-mentioned. 前記第一の封止樹脂および前記第二の封止樹脂ともに拡散剤を含有し、前記第二の封止樹脂は前記第一の封止樹脂よりも前記拡散剤の濃度が高いことを特徴とする請求項１に記載の半導体表示装置。   Both the first sealing resin and the second sealing resin contain a diffusing agent, and the second sealing resin has a higher concentration of the diffusing agent than the first sealing resin. The semiconductor display device according to claim 1. 前記第二の封止樹脂が含有する拡散剤の濃度が３０〜４０ｗｔ％であることを特徴とする請求項２に記載の半導体表示装置。   The semiconductor display device according to claim 2, wherein the concentration of the diffusing agent contained in the second sealing resin is 30 to 40 wt%. 前記拡散剤がガラスフィラーおよびシリカのうちのいずれか一方であることを特徴とする請求項２または３のいずれか１項に記載の半導体表示装置。   The semiconductor display device according to claim 2, wherein the diffusing agent is one of a glass filler and silica.
JP2006150149A 2006-05-30 2006-05-30 Semiconductor display device Pending JP2007324213A (en)

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