JP2007311459A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device easy to design an appliance or the like using the semiconductor device, evaluate or establish specifications for development before the specifications of the semiconductor device are established. <P>SOLUTION: In the semiconductor device, a voltage detector 10 includes an input terminal IN1 and a voltage division circuit 20 for processing an input signal input from the input terminal IN1 to output to a next-stage comparator COMP1. The detector 10 is constituted of a signal path L1 serving as a signal path for connecting the input terminal IN1 with the comparator COMP1 for supplying the input signal to the comparator COMP1 without processing by the voltage division circuit 20, a signal path L2 serving as a signal path for connecting the input terminal IN1 with the comparator COMP1 for supplying the input signal after processed by the circuit 20 to the comparator COMP1, and fuse elements F1-F3 for selecting one of the signal paths L1 and L2. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device.

  For example, as shown in FIG. 6, a semiconductor device 50 that detects a voltage V50 applied to an input terminal IN is known. In the semiconductor device 50, the voltage VDIV obtained by dividing the voltage V50 by the resistors R51 and R52 is input to the non-inverting input terminal of the comparator COMP51, and the reference voltage VREF is input to the inverting input terminal of the comparator COMP51. Is done. In the semiconductor device 50, the comparator COMP51 outputs a high level signal from the output terminal OUT when the voltage VDIV is higher than the reference voltage VREF, and the low level from the output terminal OUT when the voltage VDIV is lower than the reference voltage VREF. A level signal is output. By detecting the level of the voltage VDIV relative to the reference voltage VREF, the voltage value of the voltage V50 input to the input terminal IN is detected.

  In this type of semiconductor device, the resistance values of the resistors R51 and R52 are adjusted in order to remove the influence of the variations in the resistance values of the resistors R51 and R52 caused by variations in the manufacturing process (see Patent Document 1). .)

As shown in FIG. 7, the resistor R51 includes resistor elements R51A, R51B, and R51C connected in series, and a fuse element F51 and a fuse element F52 connected in parallel to the resistor element R51B and the resistor element R51C, respectively. Configured. Further, as shown in the figure, the resistor R52 is composed of resistor elements R52A, R52B, and R52C connected in series, and a fuse element F53 and a fuse element F54 connected in parallel to the resistor element R52A and the resistor element R52B, respectively. Has been. Therefore, in the semiconductor device 50 illustrated in FIG. 6, the fuse element is blown to adjust the resistance values of the resistors R51 and R52, thereby removing the influence of variations in the resistance values of the resistors R51 and R52 due to variations in the manufacturing process. it can.
JP 2003-37179 A

  However, in the semiconductor device described above, in order to incorporate a resistor having an optimum resistance value, the standard of the semiconductor device including the resistance value must be determined in advance. However, depending on the system device in which the semiconductor device is incorporated, the standard of the semiconductor device may not be determined until the development of the entire system device proceeds. In addition, there may be a case where the standard is initially fluid and is determined as the evaluation is actually progressed using a semiconductor device. In such a situation, it may be necessary to provide a semiconductor device despite the fact that the standard has not yet been determined. This is because if a semiconductor device is not provided, development of a system device or the like incorporating the semiconductor device cannot proceed and nor can a standard determination work proceed.

  Accordingly, a semiconductor device set to a provisional standard will be provided. In this case, in order to cope with the adjustment of the standard in the equipment, the correction of the standard, etc. There may be a case where a plurality of types of semiconductor devices having different standards have to be provided. In this case, a plurality of types of semiconductor devices must be manufactured, and the design, manufacture, production, delivery management, and the like are complicated.

  The present invention has been proposed in view of the above-described background art, and evaluation of the standard is required for the design and development of equipment using the semiconductor device even before the standard of the semiconductor device is finalized. Another object of the present invention is to provide a semiconductor device that can be easily confirmed.

  According to a first aspect of the present invention, there is provided a semiconductor device comprising: an input terminal; and a signal processing unit that processes an input signal input from the input terminal and outputs the processed signal to a next-stage circuit. A signal path for connecting a circuit, a first path for supplying the input signal to the next stage circuit without processing by the signal processing unit, and a signal path for connecting the input terminal and the next stage circuit A path selection unit that selects a second path to be supplied to the next-stage circuit after the input signal is processed by the signal processing unit, and one of the first path and the second path. And a portion.

According to the semiconductor device of the first aspect of the present invention, the signal path from the input terminal to the next stage circuit includes the first path and the second path, and further includes either the first path or the second path. Since the route selection unit is selected, the first route is selected by the route selection unit before the standard of the signal processing unit is decided, and after the standard of the signal processing unit is decided by the route selection unit. The second route is selected. One type of semiconductor device can select either of two signal paths from the input terminal to the next stage circuit. In the semiconductor device of the present invention, before the standard of the signal processing unit is determined, in order to determine the standard of the signal processing unit, a signal obtained when processed by the signal processing unit is used as an input signal as an input terminal. To the next circuit via the first path. A standard can be determined by supplying a signal from the outside to a semiconductor device including a signal processing unit whose standard is not yet determined.

  Furthermore, according to the semiconductor device of the first aspect of the invention, the path selection unit can switch to either the first route or the second route. If the signal is not yet determined, the first path can be selected, and the signal processed by the signal processing unit from the outside can be given as an input signal to the next-stage circuit to check the operation of the semiconductor device. After the standard of the signal processing unit is determined, the second path can be selected, and the input signal input from the input terminal can be processed by the signal processing unit and supplied to the next stage circuit. There is no need to separately provide semiconductor devices with different signal processing standards before and after the determination of the standards for the signal processing unit, and complicated design, manufacturing, management, etc., when providing multiple semiconductor devices with different standards from each other Can be suppressed.

  According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the signal processing unit includes a trimming circuit capable of adjusting a processing value for the input signal.

  According to the invention of claim 2, since the processing result of the signal processing unit can be adjusted by the trimming circuit provided in the signal processing unit, the signal is output by the trimming circuit after the standard of the signal processing unit is determined. If the second path is selected after adjusting the processing unit to the established standard, the processing result of the signal processing unit that matches the standard can be supplied to the next-stage circuit.

  According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, the signal processing unit is a voltage dividing circuit.

  According to the invention of claim 3, since the signal processing unit is a voltage dividing circuit, the voltage dividing ratio can be adjusted by the trimming circuit provided in the signal processing unit, and the output voltage value of the voltage dividing circuit can be adjusted to the standard value. .

  According to a fourth aspect of the present invention, in the semiconductor device according to any one of the first to third aspects, the path selection unit is provided on each of the signal paths of the first and second paths. And a switch circuit capable of setting the open / close state of each of the second paths.

  According to invention of Claim 4, a path | route selection part is a switch circuit which can set each open / close state of a 1st path | route and a 2nd path | route. Since each of the first path and the second path can be selected as a cut-off state, an open state, or a conduction state, a closed state, the switch circuit connected to the first path or the second path is set to either open or closed state, The first and second paths can be switched off and connected, and can be switched to either the first or second path.

  According to a fifth aspect of the present invention, in the semiconductor device according to the fourth aspect, the switch circuit is provided on the signal path of the first path, the first switch element for setting the open / close state of the first path, and the second path A second switch element that sets an open / close state of the connection between the input terminal and the signal processing unit, and a third switch element that sets an open / close state of the connection between the signal processing unit and the next stage circuit. It is characterized by providing.

  According to the invention of claim 5, the switch circuit is on the first switch element for setting the open / close state of the first path, on the signal path of the second path, between the input terminal and the signal processing unit, and Since the second and third switch elements are provided between the signal processing unit and the next circuit and set the open / close state of the second path, the open / close state of the first path can be set by opening / closing the first switch element. The open / close state of the second path can be set by opening / closing the second and third switch elements. Therefore, the selection of the first and second paths can be performed by separate switch elements.

  In addition, since the second and third switch elements are provided for the second path, both the input path and the output path to the signal processing unit are blocked by opening both the second and third switch elements. The signal processing unit can be reliably disconnected from the first path from the input terminal to the next stage circuit.

  According to a sixth aspect of the present invention, in the semiconductor device according to the fifth aspect, the first to third switch elements are fuse elements.

  According to the sixth aspect of the present invention, since the first to third switch elements are fuse elements, the fuse element is blown to cut off the path, and if the fuse element is not blown, the path is made conductive. it can.

According to the semiconductor device of the present invention, the signal path that connects the input terminal and the next stage circuit includes the first path and the second path, and the path through which the input signal propagates is the first path or the second path. Since the route selection unit to select one of them is provided, the first route is selected by the route selection unit before the standard of the signal processing unit is determined, and after the standard of the signal processing unit is determined, the first route is selected by the route selection unit. Two routes can be selected. In one type of semiconductor device, the signal path from the input terminal to the next stage circuit is processed by the signal processing unit, the first path for supplying the input signal to the next stage circuit without processing the input signal by the signal processing unit. The second path to be supplied to the next stage circuit can be selected. Before determining the standard of the signal processing unit, the first path can be selected and the processing result by the signal processing unit can be supplied from the outside as an input signal.
Furthermore, according to the semiconductor device of the present invention, the path selection unit can switch the presence or absence of processing by the signal processing unit by selecting the first route or the second route. There is no need to prepare a large number of semiconductor devices having different standards in the signal processing unit. One type of semiconductor device may be provided both before and after the standardization of the signal processing unit. The design, manufacture and management of the semiconductor device can be simplified.

  An embodiment of the present invention will be described with reference to FIGS. In the present embodiment, a case where a voltage detection device is configured as a semiconductor device of the present invention will be described as an example. FIG. 1 is a circuit configuration diagram of the voltage detection device 10. The voltage detection device 10 includes fuse elements F1 to F3, resistors R1 and R2, a comparator COMP1, and a reference power source S1 between an input terminal IN1 and an output terminal OUT1.

  One end of a fuse element F1 is connected to the input terminal IN1. The other end of the fuse element F1 is connected to a non-inverting input terminal of the comparator COMP1. A signal path L1 from the input terminal IN1 to the comparator COMP1 through the fuse element F1 is configured. The inverting input terminal of the comparator COMP1 is connected to the reference power source S1, and the reference voltage V1 is applied. The output terminal N1 of the comparator COMP1 is connected to the output terminal OUT1 of the voltage detection device 10.

  One end of a fuse element F2 is further connected to the input terminal IN1. The other end of the fuse element F2 is connected to one end of the resistor R1, and the other end of the resistor R1 is connected to the ground via the resistor R2. The resistors R1 and R2 constitute a voltage dividing circuit 20 having one end of the resistor R1 as an input and the connection point of the resistors R1 and R2 as an output.

  The output of the voltage dividing circuit 20 is connected to one end of the fuse element F3. The other end of the fuse element F3 is connected to the non-inverting input terminal of the comparator COMP1. In addition to the signal path L1, a signal path L2 from the input terminal IN1 to the comparator COMP1 via the fuse element F2, the voltage dividing circuit 20, and the fuse element F3 is configured.

  For example, as shown in FIG. 2, the resistor R1 includes resistor elements R1A, R1B, and R1C connected in series, and a fuse element F5 and a fuse element F6 connected in parallel to the resistor element R1B and the resistor element R1C, respectively. Configured. Similarly, the resistor R2 is configured such that the resistor elements R2A, R2B, and R2C are connected in series, and the fuse element F7 and the fuse element F8 are connected in parallel to the resistor element R2A and the resistor element R2B, respectively. In the present embodiment, the resistance elements R1B and R1C and the fuse elements F5 and F6 connected in parallel to the respective resistance elements R1B and R1C, and the resistance elements R2A and R2B and the resistance elements R2A and R2B are connected in parallel. Fuse elements F7 and F8 each constitute a trimming circuit. The resistor R1 can adjust the resistance value by fusing the fuse elements F5 and F6 as necessary, thereby changing the short circuit state of the resistor elements R1B and R1C by the fuse elements F5 and F6. Similarly to the resistor R1, the resistor R2 can adjust the resistance value by changing the short circuit state of the resistor elements R2A and R2B by the fuse elements F7 and F8.

  In order to determine the voltage dividing ratio of the resistors R1 and R2 of the voltage dividing circuit 20, the voltage detecting device 10 is adjusted as described below.

  In the stage before the voltage dividing ratio between the resistors R1 and R2 of the voltage dividing circuit 20 is determined, the fuse element F2 and the fuse element F3 other than the fuse element F1 are blown out in the voltage detection device 10. Thereby, as can be understood from FIG. 3, the signal path L2 is cut off and the state in which the signal path L1 is conducted is selected. A connection point of resistors R3 and R4 connected in series for dividing the detection voltage V3 is connected to the input terminal IN1 of the voltage detection device 10 in which the signal path L1 is selected as the signal path from the input terminal IN1 to the comparator COMP1. Is done. Here, one end of the resistor R4 is connected to the ground, and the detection voltage V3 is input to one end of the resistor R3. The other ends of the resistors R3 and R4 are connected to form a connection point. The resistors R3 and R4 connected in series constitute a voltage dividing circuit that divides and outputs the detection voltage V3. The voltage dividing circuit composed of the resistors R3 and R4 is externally attached to the voltage detecting device 10 and is a voltage dividing circuit that replaces the voltage dividing circuit 20 built in the voltage detecting device 10.

  That is, in the stage where the voltage dividing ratio of the resistors R1 and R2 of the voltage dividing circuit 20 is not determined, a voltage dividing circuit externally provided as the resistors R3 and R4 is provided in place of the built-in voltage dividing circuit 20, and detection is performed. The voltage V3 is divided and input to the input terminal IN1. The input divided voltage V2 is supplied to the non-inverting input terminal of the comparator COMP1 via the signal path L1.

  A reference voltage V1 is applied to the inverting input terminal of the comparator COMP1 by the reference power source S1. In the comparator COMP1, the voltage value is compared between the divided voltage V2 and the reference voltage V1, and the voltage level of the divided voltage V2 with respect to the reference voltage V1 is detected, whereby the voltage level of the detection voltage V3 is changed. Detected. At this stage, since the voltage dividing ratio of the detection voltage V3 is set by the external resistors R3 and R4, the voltage dividing ratio of the resistors R3 and R4 can be freely adjusted. By adjusting the voltage dividing ratio of the resistors R3 and R4, the voltage value of the detection voltage V3 at which the comparison result of the comparator COMP1 is inverted can be adjusted. The voltage detection device 10 can be adjusted to perform a desired output operation with respect to the detection voltage V3.

  The voltage dividing ratio of the resistors R3 and R4 adjusted as described above is a voltage dividing ratio to be set to the resistors R1 and R2 of the voltage dividing circuit 20 built in the voltage detection device 10. Since the resistance values of the resistors R1 and R2 can be adjusted, the resistance values of the resistors R1 and R2 can be adjusted so as to satisfy the determined voltage dividing ratio. Thereby, the voltage dividing ratio of the voltage dividing circuit 20 can be determined. For example, in the configuration of FIG. 2, the fuse element to be blown out of the fuse elements F5 and F6 is selected and the resistance value of the resistor R1 is set. Similarly, the fuse element to be melted is selected from the fuse elements F7 and F8, and the resistance value of the resistor R2 is set. By appropriately selecting the resistance values of the resistors R1 and R2, the voltage dividing ratio of the resistors R1 and R2 can be set to the voltage dividing ratio set by the external resistors R3 and R4. Thereby, since the voltage dividing ratio of the resistors R1 and R2 of the voltage dividing circuit 20 is set, the voltage detecting device 10 capable of performing a desired output operation with respect to the detected voltage V3 can be obtained.

  At the stage where the voltage dividing ratio between the resistors R1 and R2 of the voltage dividing circuit 20 is determined, the fuse element F1 excluding the fuse elements F2 and F3 is blown out in the voltage detection device 10. As a result, as can be understood from FIG. 4, a state in which the signal path L1 is cut off and the signal path L2 is conducted is selected.

  When the detection voltage V3 is applied to the input terminal IN1, the detection voltage V3 is divided by the voltage dividing circuit 20 via the signal path L2, and the divided voltage V4 is applied to the non-inverting input terminal of the comparator COMP1. Here, since the voltage dividing ratio of the resistors R1 and R2 is set to the same ratio as the voltage dividing ratio of the external resistors R3 and R4, the divided voltage V4 output from the voltage dividing circuit 20 is generated by the resistors R1 and R2. The voltage value is the same as the divided voltage V2 (FIG. 3). Thereby, the voltage dividing ratio of the built-in resistors R1 and R2 is determined, and the voltage dividing circuit 20 is determined. When the detection voltage V3 is input to the input terminal IN1, a desired detection result is output to the output terminal OUT1.

  Here, the divided voltage V2 obtained by dividing the detection signal V3 by the resistors R3 and R4 corresponds to the input signal of the present invention when the signal path L1 is selected, and the detection voltage V3 is selected by the signal path L2. Corresponds to the input signal of the present invention.

  The comparator COMP1 corresponds to the next stage circuit of the present invention. The voltage dividing circuit 20 including the resistors R1 and R2 corresponds to the signal processing unit of the present invention and corresponds to the voltage dividing circuit of the present invention. In the voltage dividing circuit 20, the resistance elements R1B and R1C provided in the resistor R1, the fuse elements F5 and F6 connected in parallel to the respective resistance elements R1B and R1C, and the resistance elements R2A and R2B provided in the resistor R2 and The fuse elements F7 and F8 connected in parallel to the respective resistance elements R2A and R2B correspond to trimming circuits.

  The signal path L1 corresponds to the first path of the present invention, and the signal path L2 corresponds to the second path of the present invention.

  The fuse elements F1 to F3 correspond to the path selection unit of the present invention and correspond to the switch circuit of the present invention. Further, the fuse elements F1 to F3 correspond to first to third switch elements of the present invention, respectively.

  As described above in detail, according to the voltage detection device 10 of the present embodiment, the fuse elements F2 and F3 are blown out while the fuse element F1 is left before the voltage dividing ratio in the voltage dividing circuit 20 is determined. Thus, the signal path L1 that directly connects the input terminal IN1 and the non-inverting input terminal of the comparator COMP1 can be selected. The voltage detection device 10 can be operated by providing an external voltage dividing circuit and supplying the divided voltage V2 to the input terminal IN1. The voltage dividing ratio to be set in the voltage dividing circuit 20 can be determined by adjusting the voltage dividing ratio of the external voltage dividing circuit.

  At the stage where the voltage dividing ratio of the voltage dividing circuit 20 is determined, the voltage dividing ratio of the voltage dividing circuit 20 can be adjusted to a desired voltage dividing ratio by the trimming circuit including the fuse elements F5 to F8 of the resistors R1 and R2. In addition, if the voltage detection device 10 in which the fuse element F1 is blown out while leaving the fuse elements F2 and F3 is provided, the signal path from the input terminal IN1 to the non-inverting input terminal of the comparator COMP1 via the voltage dividing circuit 20 L2 is selected, and the divided voltage V4 divided by the desired voltage dividing ratio in the voltage dividing circuit 20 is supplied to the comparator COMP1.

  One type of voltage detection device 10 can select one of the two signal paths L1 and L2 from the input terminal IN1 to the comparator COMP1. Even when the voltage dividing ratio of the voltage dividing circuit 20 is uncertain, the signal path L1 connecting the input terminal IN1 and the comparator COMP1 is selected, and the divided voltage V2 by the external voltage dividing circuit is directly compared with the comparator COMP1. Can be supplied to. Even when the voltage division ratio is uncertain, adjustment of the voltage division ratio can be advanced by incorporating the voltage detection device 10 into a device or the like.

  In the voltage detection device 10, since either the signal path L1 or the signal path L2 can be selected by the fuse elements F1 to F3, the fuse element to be blown is selected, and the signal path to be used is changed to the signal path. It is possible to switch to either L1 or signal path L2. Thus, it is not necessary to provide a plurality of voltage detection devices having different voltage division ratios for evaluation for determining the voltage division ratio, and one type of voltage detection device 10 can be used. The complexity of the design, manufacture, management, etc. of the voltage detection device can be reduced.

  Note that the present invention is not limited to the above-described embodiment, and can be implemented by appropriately changing a part of the configuration without departing from the spirit of the invention.

  For example, the voltage detection device 10 of the embodiment may use a Zener diode instead of the fuse elements F1 to F3. According to the voltage detection device using a Zener diode, when a reverse bias voltage is applied to the Zener diode and short-circuited, the signal path connected to the short-circuited Zener diode can be made conductive. When the reverse bias voltage is not applied to the Zener diode, the Zener diode is kept open and the signal path can be cut off.

  In the voltage detection device 10, the case where two fuse elements F1 and F2 are provided to set the open / close state of the signal path L2 has been described as an example. However, either one of the fuse elements F2 or F3 is provided. For example, the open / closed state of the signal path L2 can be set. If the fuse elements F1 and F2 are provided, the fuse element F1 is blown and the fuse element F2 is not blown, whereby the signal path L1 is cut off and the signal path L2 is selected. Since the fuse element F2 is blown and the fuse element F1 is not blown, the signal path L2 is cut off and the signal path L1 is selected. If the fuse elements F1 and F3 are provided, the fuse element F1 is blown and the fuse element F3 is not blown, whereby the signal path L1 is cut off and the signal path L2 is selected. Since the fuse element F3 is blown and the fuse element F1 is not blown, the signal path L2 is cut off and the signal path L1 is selected.

  Moreover, the configuration of the voltage detection apparatus 10A illustrated in FIG. 5 may be provided. That is, a signal path L1 that connects the input terminal IN1 and the non-inverting input terminal of the comparator COMP1 via the fuse element F1 is set, and the fuse element F4 is connected to the connection point between the resistor R1 and the resistor R2 and the resistor A voltage dividing circuit 20A is configured by being connected to one end of R2.

  When the fuse element F1 is blown and the fuse element F4 is not blown, the signal path L1 is cut off and the signal path L2 is selected.

  Since the fuse element F4 is blown and the fuse element F1 is not blown, the signal path L1 is selected. In this case, the signal path L2 from the input terminal IN1 to the non-inverting input terminal of the comparator COMP1 via the resistor R1 of the voltage dividing circuit 20A is maintained in the set state, but the fuse element F4 is blown. The voltage dividing circuit 20A is opened. Further, both ends of the resistor R1 are short-circuited by the signal path L1 and connected to the input terminal IN1. Thereby, the input signal supplied from the input terminal IN1 is supplied to the non-inverting input terminal of the comparator COMP1 through any of the signal paths L1 and L2.

  Further, the fuse element F4 in the voltage detection device 10A may be configured to be connected between the resistor R2 and the ground. Furthermore, the voltage detection device 10A may be configured to include only the fuse element F1 without including the fuse element F4. When the fuse element F1 is blown, the signal path L2 through the voltage dividing circuit constituted by the resistors R1 and R2 is selected, and since the fuse element F1 is not blown, the signal path L1 is selected. In this case, the voltage dividing circuit is maintained in a state of being connected to the input terminal IN1, but the input / output ends of the voltage dividing circuit, that is, both ends of the resistor R1 are short-circuited by the signal path L1, so the resistors R1 and R2 are configured. In the divided voltage circuit, the voltage dividing operation is not performed. The non-inverting input terminal of the comparator COMP1 is connected to the input terminal IN1 through the signal path L1, and an input signal is supplied thereto. Furthermore, the fuse element F1 in the voltage detection device 10A may not be provided, and only the fuse element F4 may be provided between the connection point between the resistor R1 and the resistor R2 and the resistor R1. When the fuse element F4 is not blown, a voltage divided by the resistors R1 and R2 is supplied. When the fuse element F4 is blown, the input signal input to the input terminal IN1 is compared. Can be supplied to the non-inverting input terminal of the comparator COMP1.

  In FIG. 2, the resistors R1 and R2 constituting the voltage dividing circuit 20 are connected to the resistor elements R1B and R1C and the fuse elements F5 and F6 connected in parallel to the resistor elements R1B and R1C, and the resistor element R2A, respectively. , R2B and fuse elements F7 and F8 connected in parallel to the respective resistance elements R2A and R2B, and the resistance value can be adjusted. However, the present application is not limited to this. Any one of the resistors R1 and R2 may be configured such that the resistance value can be adjusted.

It is a circuit block diagram of the voltage detection apparatus which concerns on embodiment of this invention. It is a schematic block diagram of resistance with which the voltage detection apparatus is provided. It is a circuit block diagram which shows the usage example before determining the voltage dividing ratio of the voltage detection apparatus. It is a circuit block diagram which shows the usage example after determining the voltage dividing ratio of the voltage detection apparatus. It is a circuit block diagram of the voltage detection apparatus which concerns on other embodiment. It is a circuit block diagram of the conventional voltage detection circuit. It is a schematic block diagram of the resistor with which the conventional voltage detection circuit is provided.

Explanation of symbols

10, 10A Voltage detection device 20, 20A Voltage divider circuit COMP1 Comparator F1-F8 Fuse element IN1 Input terminal L1, L2 Signal path OUT1 Output terminal R1, R2 Resistors R1A-R1C, R2A-R2C Resistive elements V1 Reference voltages V2, V4 Divided voltage V3 Detection voltage

Claims (6)

In a semiconductor device including an input terminal and a signal processing unit that processes an input signal input from the input terminal and outputs the processed signal to a next-stage circuit.
A signal path connecting the input terminal and the next stage circuit, the first path for supplying the input signal to the next stage circuit without processing by the signal processing unit;
A signal path connecting the input terminal and the next-stage circuit, wherein the input signal is processed by the signal processing unit and then supplied to the next-stage circuit;
A path selection unit that selects one of the signal paths of the first path and the second path;
A semiconductor device comprising:   The semiconductor device according to claim 1, wherein the signal processing unit includes a trimming circuit capable of adjusting a processing value for the input signal.   The semiconductor device according to claim 1, wherein the signal processing unit is a voltage dividing circuit.   The path selection unit is a switch circuit provided on each signal path of the first and second paths and capable of setting an open / close state of each of the first and second paths. 4. The semiconductor device according to at least one of claims 1 to 3. The switch circuit is
A first switch element provided on the signal path of the first path and setting an open / closed state of the first path;
On the signal path of the second path, a second switch element that sets an open / close state of the connection between the input terminal and the signal processing unit, and an open / close state of the connection between the signal processing unit and the next-stage circuit The semiconductor device according to claim 4, further comprising a third switch element that sets   6. The semiconductor device according to claim 5, wherein the first to third switch elements are fuse elements.

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