JP2007310092A - 作動型反射/吸収板、及びこれを用いた表示素子 - Google Patents
作動型反射/吸収板、及びこれを用いた表示素子 Download PDFInfo
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- JP2007310092A JP2007310092A JP2006138057A JP2006138057A JP2007310092A JP 2007310092 A JP2007310092 A JP 2007310092A JP 2006138057 A JP2006138057 A JP 2006138057A JP 2006138057 A JP2006138057 A JP 2006138057A JP 2007310092 A JP2007310092 A JP 2007310092A
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- refractive index
- reflection
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- display element
- moth
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000004973 liquid crystal related substance Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 239000006096 absorbing agent Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 13
- 230000008859 change Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 239000011295 pitch Substances 0.000 description 7
- 229920002545 silicone oil Polymers 0.000 description 7
- 230000010287 polarization Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- MVTAXCITVKAZDI-UHFFFAOYSA-N 4-[chloro(dimethoxy)silyl]oxy-n,n-dimethyldocosan-1-amine Chemical compound CCCCCCCCCCCCCCCCCCC(O[Si](Cl)(OC)OC)CCCN(C)C MVTAXCITVKAZDI-UHFFFAOYSA-N 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 210000000744 eyelid Anatomy 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/38—Anti-reflection arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
- G02F2203/026—Function characteristic reflective attenuated or frustrated internal reflection
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Liquid Crystal (AREA)
- Optical Elements Other Than Lenses (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】表面にモスアイ構造を持つ基板を含むことを特徴とする作動型反射/吸収板。
【選択図】図1
Description
さらに、凹凸形状を構成する材料は、入射光に対して反射し易いように金属光沢を示すような不透明基板であることが好ましい。これにより、凹凸表面に別途反射用の膜等を形成することなく、反射型表示素子を構成する画素電極を形成することも可能となる。
│na−nb│ < 0.2
│na−nb‘│ > 0.5
が成り立っている。
以下、本発明をより詳細に説明するべく、本発明の好ましい実施例を示す。尚、これら実施例は、本発明の理解を容易にする目的で掲載されるものであり、本発明を限定するものではない。また本発明はその要旨の範囲内で種々変更して用いることができることは言うまでもない。
図4に、本発明の表示素子の第1の例の動作を説明するための模式的な断面図を示す。
図5に、本発明の表示素子の第2の例の動作を説明するための模式的な断面図を示す。
図6に、微細凹凸形状加工を施したNi電極板の第2の例を表す模式的な断面図を示す。
図7に、微細凹凸形状加工を施したNi電極板の第3の例を表す模式的な断面図を示す。
図8に、微細凹凸形状加工を施したNi電極板の第4の例を表す模式的な断面図を示す。
Claims (6)
- 表面にモスアイ構造を持つ基板を含むことを特徴とする作動型反射/吸収板。
- 表面にモスアイ構造を持つ基板と、このモスアイ構造を有する基板の表面上に、外部刺激により屈折率が変化する媒体を設けたことを特徴とする請求項1に記載の作動型反射/吸収板。
- 前記媒体は、複屈折性を有することを特徴とする請求項2に記載の作動型反射/吸収板。
- 前記複屈折性を有する媒体は液晶であることを特徴とする請求項3に記載の作動型反射/吸収板。
- 前記媒体は、帯電処理された低屈折率の材料と高屈折率の材料が相分離した構造であることを特徴とする請求項1に記載の作動型反射/吸収板。
- 請求項1ないし5のいずれか1項に記載の作動型反射/吸収板を用いた表示素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006138057A JP4703481B2 (ja) | 2006-05-17 | 2006-05-17 | 表示素子 |
PCT/JP2007/058636 WO2007132636A1 (ja) | 2006-05-17 | 2007-04-20 | 作動型反射/吸収板、及びこれを用いた表示素子 |
US12/271,066 US8004637B2 (en) | 2006-05-17 | 2008-11-14 | Operative reflection and absorption plate and display element using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006138057A JP4703481B2 (ja) | 2006-05-17 | 2006-05-17 | 表示素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007310092A true JP2007310092A (ja) | 2007-11-29 |
JP2007310092A5 JP2007310092A5 (ja) | 2008-05-29 |
JP4703481B2 JP4703481B2 (ja) | 2011-06-15 |
Family
ID=38693735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006138057A Active JP4703481B2 (ja) | 2006-05-17 | 2006-05-17 | 表示素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8004637B2 (ja) |
JP (1) | JP4703481B2 (ja) |
WO (1) | WO2007132636A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008009409A (ja) * | 2006-05-31 | 2008-01-17 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US8593603B2 (en) | 2006-05-31 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007139210A1 (en) | 2006-05-31 | 2007-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2008069162A1 (en) | 2006-12-05 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Anti-reflection film and display device |
US9445494B2 (en) * | 2011-05-23 | 2016-09-13 | Sharp Kabushiki Kaisha | Wiring substrate and display panel comprising same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005099467A (ja) * | 2003-09-25 | 2005-04-14 | Seiko Epson Corp | 電気光学装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5868951A (en) * | 1997-05-09 | 1999-02-09 | University Technology Corporation | Electro-optical device and method |
US6175442B1 (en) * | 1999-05-25 | 2001-01-16 | Intel Corporation | Anti-reflection layer in spatial light modulators |
US8054416B2 (en) * | 2000-08-15 | 2011-11-08 | Reflexite Corporation | Light polarizer |
JP3970067B2 (ja) * | 2002-03-19 | 2007-09-05 | 株式会社リコー | 光路切替素子、空間光変調器および画像表示装置 |
-
2006
- 2006-05-17 JP JP2006138057A patent/JP4703481B2/ja active Active
-
2007
- 2007-04-20 WO PCT/JP2007/058636 patent/WO2007132636A1/ja active Application Filing
-
2008
- 2008-11-14 US US12/271,066 patent/US8004637B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005099467A (ja) * | 2003-09-25 | 2005-04-14 | Seiko Epson Corp | 電気光学装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008009409A (ja) * | 2006-05-31 | 2008-01-17 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US8593603B2 (en) | 2006-05-31 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
Also Published As
Publication number | Publication date |
---|---|
US8004637B2 (en) | 2011-08-23 |
JP4703481B2 (ja) | 2011-06-15 |
US20090066894A1 (en) | 2009-03-12 |
WO2007132636A1 (ja) | 2007-11-22 |
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