JP2007300086A - Photoelectric transducer module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric transducer module without exfoliating various elements a protective layer, resin, etc. around a mounting hole by frequent detaching operation, with reliable mounting. <P>SOLUTION: The photoelectric transducer module includes a flexible translucent base 9 having a photoelectric transducer element 8 embedded therein; a first translucent protective layer 10 which is provided on a light reception surface side of the translucent base 9; a second protective layer 11 which is provided on a surface opposite to the light reception surface of the translucent base 9; and a stiffened member 12 which is embedded in the outer periphery of the translucent base 9, and has a mounting hole 13 formed for external attachment. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a photoelectric conversion module such as a solar cell installed on a roof of a house.

  As a conventional photoelectric conversion module, for example, in Patent Document 1, in order to seal a solar cell formed on an electrically insulating film substrate with an electrically insulating protective material, In a solar cell module in which a protective layer is provided on both sides of the non-light-receiving surface, a protective layer is extended to the side of the solar cell to form a non-power generation region, and a mounting hole for installing the solar cell module is formed in the non-power generation region. A solar cell module that can maintain light weight, flexibility, and module strength, can be easily installed, and can achieve cost reduction as a whole has been proposed.

Patent Document 2 discloses a solar cell module in which a light receiving surface and a non-light receiving surface of a photovoltaic element are covered and protected with a resin, and the photovoltaic element is arranged on the periphery of the photovoltaic element so as not to be superimposed on the photovoltaic element. By having a plate-shaped reinforcing material with a provided through-hole and having a hole that penetrates the resin at a position corresponding to the through-hole, it is lightweight and can be easily installed and fixed with a string or the like A solar cell module has been proposed in which the strength of the through hole portion for fixing the solar cell module that can be used can withstand long-term use.
JP 2001-7375 A JP 2002-141542 A

  However, when the photoelectric conversion module is installed on the roof of a house, the photoelectric conversion module may be frequently attached and detached. In that case, as in Patent Documents 1 and 2, if a through hole is provided in a resin member to form a mounting hole, the protective layer and the resin around the mounting hole are peeled off due to frequent desorption work, and the photoelectric There was a problem that the reliability of mounting the conversion module was lowered.

  An object of the present invention is to provide a photoelectric conversion module having high mounting reliability without causing various members, protective layers, resins, and the like around the mounting hole to be peeled off due to frequent detachment work.

  As a result of intensive studies to solve the above problems, the present inventors have embedded the photoelectric conversion element in the outer peripheral portion of the translucent substrate embedded therein and formed a mounting hole in the photoelectric conversion module. It has been found that a photoelectric conversion module with high mounting reliability can be provided by providing the reinforcing member, and the present invention has been completed.

  That is, the photoelectric conversion module of the present invention has the following configuration.

  (1) A large number of one-conductivity-type crystalline semiconductor particles are bonded to one main surface of a conductive substrate, an insulating material is interposed between those adjacent ones, and an upper portion is exposed from the insulating material. The photoelectric conversion element in which the other conductive type semiconductor portion and the light-transmitting conductor layer are formed on the crystalline semiconductor particles, and the collector electrode is formed on the light-transmitting conductor layer, and the photoelectric conversion element A translucent substrate having translucency embedded therein, a translucent first protective layer provided on the light-receiving surface side of the translucent substrate, and a light-receiving surface of the translucent substrate; A second protective layer provided on the opposite surface; and a reinforcing member embedded in an outer peripheral portion of the translucent substrate and having a mounting hole for external mounting. A photoelectric conversion module.

  (2) A semiconductor layer portion in which a plurality of semiconductor layers are stacked, a light receiving surface electrode portion provided on the light receiving surface side of the semiconductor layer portion, and a back electrode portion provided on the back surface side of the semiconductor layer portion, A photoelectric conversion element having a collector electrode formed on the light-receiving surface electrode part, a light-transmitting substrate having light-transmitting properties embedded in the photoelectric conversion element, and a light-receiving surface side of the light-transmitting substrate A light-transmitting first protective layer, a second protective layer provided on a surface opposite to the light-receiving surface of the light-transmitting substrate, and an external portion embedded in the outer peripheral portion of the light-transmitting substrate. A photoelectric conversion module comprising: a reinforcing member having a mounting hole for mounting.

  (3) The photoelectric conversion module according to (1) or (2), wherein a part of the reinforcing member is exposed to the outside and the mounting hole is formed in the exposed portion.

  (4) The translucent substrate has a rectangular shape, the collector electrode is formed in parallel with two opposite sides of the rectangle, and the reinforcing member has a long plate shape and the translucent substrate. The photoelectric conversion module according to any one of (1) to (3), wherein the photoelectric conversion module is provided on two opposite sides parallel to the collector electrode.

  (5) The reinforcing member is embedded in the outer peripheral portion of the translucent substrate between both end portions of the outer peripheral portion in the arrangement direction of the collector electrode. Photoelectric conversion module.

  (6) The photoelectric conversion module according to any one of (1) to (5), wherein the collector electrode is made of a conductive plate.

  According to the photoelectric conversion module of the present invention, according to the above (1) and (2), the translucent substrate in which the photoelectric conversion element is embedded, and the translucency provided on the light receiving surface of the translucent substrate. The first protective layer, the second protective layer provided on the non-light-receiving surface of the translucent substrate, and the reinforcing member embedded in the outer peripheral portion of the translucent substrate. The distance between the side surface of the optical substrate, that is, the side surface of the photoelectric conversion module and the mounting hole can be shortened as much as possible, and a compact photoelectric conversion module that can withstand a mechanical load can be provided. In addition, when installing a photoelectric conversion module along a curved surface, the gap between the mounting holes of the photoelectric conversion module is also pressed against the curved surface with a reinforcing material, so that there is no gap between the curved surface and the photoelectric conversion can withstand wind Modules can be provided.

  Further, according to the above (3), the reinforcing member is provided with the attachment hole in the portion protruding to the outside from the side surface of the translucent substrate, so that the side surface of the translucent substrate, that is, the side surface of the photoelectric conversion module. The distance between the mounting hole and the mounting hole can be shortened as much as possible. As a result, the mechanical strength of the part protruding to the outside of the reinforcing member is increased, and the photoelectric conversion module is frequently attached and detached around the mounting hole. The various members, protective layer, resin and the like are not peeled off. In addition, when installing the photoelectric conversion module along a curved surface such as a roof of a house, the portion protruding outside the reinforcing member of the photoelectric conversion module is appropriately deformed and pressed along the curved surface. The gap between the protective layer 2 (especially the end of the second protective layer) and the curved surface or between the reinforcing member and the curved surface is less likely to occur, and as a result, weather resistance that can withstand wind and rain (especially wind) for a long time A highly efficient photoelectric conversion module can be provided.

  According to the above (4) and (5), the translucent substrate has a rectangular shape, and the collector electrode is formed in parallel with two opposite sides of the rectangle, and the reinforcing member is long. The reinforcing member suppresses bending and deflection when the photoelectric conversion module is mounted on a flat surface or curved surface by being provided on two opposing sides parallel to the collector electrode of the translucent substrate. The disconnection and breakage of the collector electrode can be prevented. In this case, the collector electrode is, for example, electrically connected in series to the collector electrode of the adjacent photoelectric conversion element.

  Further, according to the above (6), since the collector electrode is made of a conductive plate, the resistance is greatly reduced as compared with a collector electrode made of a conventional bus bar electrode and finger electrode made of conductive paste or the like. Sexually improves. As a result, the photoelectric conversion efficiency is greatly improved.

  One embodiment of the photoelectric conversion module of the present invention will be described below in detail with reference to the drawings.

(First embodiment)
1-4 is sectional drawing which shows the example of 1st Embodiment about the photoelectric conversion module of this invention. First, in FIG. 3, 1 is a conductive substrate which becomes one electrode, 2 is a crystalline semiconductor particle in which a semiconductor layer 4 of the other conductivity type is formed on the surface layer portion, and 3 is one conductivity type (hereinafter also referred to as a first conductivity type). ) Crystal semiconductor particles (crystal semiconductor particles themselves), 4 is a semiconductor layer of the other conductivity type (hereinafter also referred to as second conductivity type), 5 is an insulating material, 6 is a translucent conductor layer, and 7 is the other electrode (collector). Electrode), 8 is a photoelectric conversion element, 9 is a translucent substrate, 10 is a translucent first protective layer, and 11 is a second protective layer. In FIG. 1, 12 is a reinforcing member, 13 is a mounting hole, and 14 is a fixing bracket.

  As shown in FIG. 3A, the other electrode (collector electrode) 7 has a concave mirror-shaped light reflecting surface for condensing the crystalline semiconductor particles 2 and the crystalline semiconductor particles 2 at the lower end of the light reflecting surface. A light reflecting member 30 in which an opening for exposing the light is formed is installed. In this case, the collector electrode 7 is made of a conductive plate, such as a metal plate, a metal sheet, or a metal foil made of Cu, Al, Au, Ag, or an alloy thereof. In addition, the collector electrode 7 may be in the form of a single sheet in which a large number of openings through which the crystalline semiconductor particles 2 are inserted are formed. The collector electrode 7 is adhered to the light-transmitting conductor layer 6 on the insulating material 5 with a conductive adhesive made of silver-containing epoxy resin or the like. The light reflecting member 30 includes, for example, a body portion made of a flexible resin such as polycarbonate, polyethylene terephthalate, acrylic resin, fluorine resin, olefin resin, and Al, Ag formed on a concave mirror-shaped light reflecting surface of the body portion. , Au, Cu, Pt, Zn, Ni, Cr, and the like. The light reflecting member 30 may be entirely made of a metal such as Al, Cu, Zn, Ni, or Cr. In this case, the light reflecting member 30 can also serve as the collector electrode 7. The light reflecting member 30 may be a single sheet having a large number of openings.

  Moreover, as shown in FIG.3 (b), it is good also as a structure which replaced with the light reflection member 30 and provided the translucent condensing layer 7b. The light transmitting condensing layer 7b is made of a light transmitting resin such as polycarbonate, polyethylene terephthalate, acrylic resin, fluorine resin, olefin resin, etc., and is formed in a convex lens shape on each crystal semiconductor particle 2, for example. In this case, the collector electrode may be composed of a bus bar electrode and a finger electrode formed on the translucent conductor layer 6.

(Photoelectric conversion element)
The conductive substrate 1 constituting the photoelectric conversion element 8 may be made of a metal having a melting point equal to or higher than that of aluminum and causing a reaction with a basic aqueous solution, such as aluminum, aluminum alloy, iron, nickel alloy and the like. Become. When the material of the conductive substrate 1 is other than aluminum, the conductive substrate 1 has a structure in which the material and an electrode layer (not shown) made of aluminum are laminated.

  The crystalline semiconductor particles 2 form a second conductive type semiconductor layer 4 in a portion excluding the lower part of the surface of the first conductive type crystalline semiconductor particles 3. The first conductivity type crystalline semiconductor particles 3 are formed by containing a trace amount of B, Al, Ga or the like exhibiting p-type or P, As or the like exhibiting n-type in Si. As the shape of the crystalline semiconductor particles 2, there are polygonal shapes, those having a curved surface such as a spherical shape, an ellipsoid shape, etc., and the particle size distribution may be uniform or non-uniform. Since a process for aligning the particle diameters is required, it is advantageous that the particle diameters are not uniform in order to reduce the cost. Furthermore, the crystal semiconductor particle 2 has a convex curved surface such as a spherical shape, whereby the dependency of the light beam angle can be reduced.

  The second-conductivity-type semiconductor layer 4 is made of a material in which the surface of the first-conductivity-type crystalline semiconductor particle 3 contains P, As, etc. exhibiting n-type, or B, Al, Ga, etc. exhibiting p-type. It is applied or formed on the surface of the first conductivity type crystalline semiconductor particles 3 by thermal diffusion or the like using a gas.

  The grain size of the crystalline semiconductor particles 2 is preferably 0.2 to 0.8 mm. If the thickness exceeds 0.8 mm, the amount of semiconductor used in the photoelectric conversion module of the present invention increases, and the amount used of a semiconductor such as silicon in the conventional crystal plate type photoelectric conversion module does not change. There is no advantage. Moreover, when smaller than 0.2 mm, the problem that it becomes difficult to incorporate the crystalline semiconductor particles 2 into the conductive substrate 1 occurs. The particle size of the crystalline semiconductor particles 2 is more preferably 0.2 to 0.6 mm from the viewpoint of suppressing the amount of silicon used.

  After a large number of crystal semiconductor particles 2 are arranged on the conductive substrate 1, a certain load is applied and heated to a temperature equal to or higher than the eutectic temperature (577 ° C.) of the conductive substrate 1 made of aluminum and the crystal semiconductor particles 2 made of silicon. Thus, an alloy layer (not shown) of the conductive substrate 1 and the crystalline semiconductor particles 2 is formed, and the conductive substrate 1 and the crystalline semiconductor particles 2 are bonded via the alloy layer.

  After bonding the conductive substrate 1 and the crystalline semiconductor particles 2, the conductive substrate 1 and the pn junction (the junction between the first conductive type crystalline semiconductor particles 3 and the second conductive type semiconductor layer 4) are joined together. For separation, for example, a part (upper part) of the surface of the crystalline semiconductor particle 2 is covered with a resist layer and etched to separate the conductive substrate 1 and the semiconductor layer 4 on the crystalline semiconductor particle 2.

The insulating material 5 is made of an insulating material for separating the positive electrode and the negative electrode of the photoelectric conversion element 8, for example, SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , CaO, MgO, P ₂ O ₅ , Li ₂ O. , SnO, ZnO, BaO, TiO ₂ or the like, a glass for low-temperature firing, a glass composition containing one or more of the above materials as a filler, or an insulating material made of a resin such as a silicone resin can be used.

  The insulating material is coated on the crystalline semiconductor particles 2 and heated at a temperature not higher than 577 ° C., which is the eutectic temperature of aluminum and silicon, to insulate the separation portion between the conductive substrate 1 and the pn junction portion. The insulating material 5 is formed by filling the material. When the heating temperature exceeds 577 ° C., the alloy layer of aluminum and silicon starts to melt, so that the bonding between the conductive substrate 1 and the crystalline semiconductor particles 2 and the separation between the conductive substrate 1 and the semiconductor layer 4 become unstable. In some cases, the crystalline semiconductor particles 2 are detached from the conductive substrate 1 and cannot generate a generated current. After the insulating material 5 is formed, the surface of the crystalline semiconductor particles 2 is cleaned with a cleaning solution containing hydrofluoric acid.

When the semiconductor layer 4 is formed or the crystal semiconductor particle 2 contains a small amount of an element of the second conductivity type on the outer surface, the other side of the crystalline semiconductor particle 2 (on the semiconductor layer 4) and the surface of the insulating material 5 A translucent conductor layer 6 also serving as an electrode is formed. The translucent conductor layer 6 is composed of one or a plurality of oxide-based films selected from SnO ₂ , In ₂ O ₃ , ITO, ZnO, and the like, and is formed by sputtering, vapor phase growth, coating baking, or the like. It is formed. The translucent conductor layer 6 has an effect as an antireflection film if the film thickness is appropriately selected.

  In order to reduce the series resistance value between the crystalline semiconductor particles 2, an output current obtained by photoelectric conversion at the crystalline semiconductor particles 2 by providing a collector electrode 7 as an upper electrode on the translucent conductor layer 6 on the insulating material 5. Collecting current. The collector electrode 7 is made of a metal foil made of Cu or the like and having a thickness of several tens of μm. Alternatively, a pattern electrode composed of finger electrodes formed at regular intervals may be provided on the translucent conductor layer 6 as an upper electrode, and a bus bar electrode may be further provided to connect the crystalline semiconductor particles 2 to each other. . The material of the finger electrode may be a metal, a glass-metal mixed material containing glass with metal powder, or a resin-metal mixed material containing resin with metal powder. As the bus bar electrode, a copper core whose surface is coated with solder is mainly used.

  Note that a transparent resin layer may be formed on the photoelectric conversion element 8 so as to follow the unevenness of the photoelectric conversion element 8 in order to obtain a light condensing structure with improved light condensing performance. In that case, you may provide a heat resistant resin film (not shown) between the photoelectric conversion element 8 and the 1st protective layer 10 in order to maintain a condensing structure.

(Photoelectric conversion module)
Next, as shown in FIG. 1, a first protective layer 10 made of a transparent and weather-resistant resin, a second protective layer 11 made of a weather-resistant resin, and a transparent and elastic material. The photoelectric conversion element 8 obtained as described above and the reinforcing member 12 in which the mounting holes 13 for external mounting are formed in advance are arranged as shown in FIG. The photoelectric conversion module can be manufactured by sandwiching and laminating with a laminator.

  The translucent substrate 9 is made of an optically transparent and flexible material, and examples thereof include ethylene vinyl acetate polymer (EVA), polyolefin, and fluororesin.

  The first protective layer 10 is made of an optically transparent and weather-resistant resin, such as polyvinyl fluoride (PVF), ethylene-tetrafluoroethylene copolymer (ETFE), polytetrafluoroethylene (PTFE), Fluorine resins such as tetrafluoroethylene-perfluoroalkoxy copolymer (PFA), tetrafluoroethylene-6-fluoropropylene copolymer (FEP), polytrifluoroethylene chloride (PCTFE), and the like can be used.

  The second protective layer 11 only needs to be made of a weather-resistant material. For example, polyvinyl fluoride (PVF), ethylene-tetrafluoroethylene copolymer (ETFE), polytrifluoroethylene chloride (PCTFE) Or a resin sheet such as polyethylene terephthalate (PET) or the like, a sheet laminated with an aluminum foil or a metal oxide film using these resin films, and a metal sheet such as stainless steel.

(Reinforcing member)
As shown in FIGS. 1 and 2, the reinforcing member 12 is provided on the outer periphery of the photoelectric conversion module, and a mounting bracket 14 such as a screw is inserted into the mounting hole 13 so that the photoelectric conversion module is placed on the roof or wall surface of the house. A part of the reinforcing member 12 is embedded in the photoelectric conversion module, and the mounting hole 13 is provided through the reinforcing member 12.

  The method of installing the photoelectric conversion module is performed by using a mounting bracket 14 such as a nail, a screw, a wire or the like through the mounting hole 13, and can be relatively easily fixed to the installation portion.

  As an evaluation method of the installation state of the photoelectric conversion module, there is a mechanical load test (JIS C 8990 (IEC 61215)), and it is necessary to endure a load of 2400 Pa in this test. When a photoelectric conversion module (FIGS. 5 and 6) having no reinforcing member 12 is tested, the mounting hole 13 is broken in a mechanical load test because the strength of the mounting hole 13 is insufficient, and photoelectric conversion is performed from the mounting bracket 14. Module dropped out. Further, when the reinforcing member 12 is overlaid from above the end of the photoelectric conversion module and fixed with the mounting bracket 14 (not shown), the mounting hole 13 is torn and the mounting member 14 passes through the photoelectric conversion module. Dropped out of the installation area.

  Therefore, in the present invention, the reinforcing member 12 is provided inside the photoelectric conversion module, the mounting hole 13 is provided through the reinforcing material 12, and is fixed by the mounting bracket 14 through the mounting hole 13. The conversion module was configured so that it could withstand the mechanical load test without falling off.

  Further, when the photoelectric conversion module is installed on the curved surface 15 such as the roof of a house, if the reinforcing member 12 is not used, even if the photoelectric conversion module is installed along the curved surface 15, as shown in FIG. A gap is likely to occur between the module lower surface (particularly its end) and the curved surface 15 or between the mounting hole 13 of the photoelectric conversion module and the curved surface 15, and wind enters the gap during the wind resistance test. The hole 13 is broken and the photoelectric conversion module is easily detached from the mounting bracket 14. On the other hand, by using the reinforcing member 12 as in the present invention, the end portion of the photoelectric conversion module can be brought into close contact with the curved surface 15 and wind can be prevented from entering.

  As a method of providing a part of the reinforcing member 12 inside the end portion of the translucent substrate 9, a part of the reinforcing member 12 is used when a photoelectric conversion module is manufactured using a laminator as shown in FIGS. Is arranged between the end of the first protective layer 10 and the end of the second protective layer 11 and arranged so as not to contact the photoelectric conversion element 8 (several to several tens). In this state, a filler such as a transparent resin that becomes the translucent substrate 9 is poured between the first protective layer 10 and the second protective layer 11, and the filler can be solidified. Then, as shown in FIG. 2, the first protective layer 10, the translucent substrate 9, the reinforcing member 12, and the second protective layer 11 are laminated.

  As another method of providing a part of the reinforcing member 12 inside the end of the translucent base 9, a groove for fitting a part of the reinforcing member 12 is provided in advance on the side surface of the solid translucent base 9. You may use the method of providing.

  The material of the reinforcing member 12 is preferably a metal or a resin, but is preferably a metal that does not rust or has a rust prevention treatment, such as aluminum, SUS (stainless steel), galvanium steel plate, There are metals such as brass. In the case of a resin, any resin that can temporarily withstand the temperature (90 to 130 ° C.) at the time of lamination may be used, and examples thereof include resins such as polycarbonate and glass epoxy resin.

  If the width embedded in the end portion of the translucent substrate 9 of the reinforcing member 12 is too small, the tensile strength in the mounting hole 13 is insufficient, and if it is too wide, the area of the photoelectric conversion module itself becomes large. Therefore, the width is preferably about 3 to 10 mm.

  When the thickness of the reinforcing member 12 is too thin, the strength of the reinforcing member 12 is insufficient and easily deforms, so that the effect of pressing the reinforcing member 12 against the curved surface 15 is lost. When the thickness is too thick, the thickness of the photoelectric conversion module itself is lost. Since the thickness becomes thicker, the thickness is preferably about 0.2 to 2 mm.

  Further, if the rigidity of the reinforcing member 12 is too large, it is difficult to attach the reinforcing member 12 to the curved surface. If the rigidity is too small, the photoelectric conversion element 8 and the like are damaged when a force such as bending is applied during handling. It should be ~ 4000 MPa. From the viewpoint of strength, the tensile strength is preferably 40 to 100 MPa.

  As shown in FIG. 2, the shape of the reinforcing member 12 does not necessarily need to be disposed on the entire side surface of the photoelectric conversion module. If the strength of the mounting hole 13 and the pressing effect on the curved surface 15 are obtained, You may arrange | position the small reinforcement member 12 which consists of the attachment hole 13 and its peripheral part in a part of one side surface of a photoelectric conversion module.

  If the number of the mounting holes 13 of the reinforcing member 12 is too small, the fixing of the photoelectric conversion module becomes unstable. If the number of the mounting holes 13 is too large, the fixing operation of the photoelectric conversion module becomes complicated. The number is preferably about 4-8.

  In addition, when the planar view shape of the photoelectric conversion module is a quadrangle, the corner may be chamfered so as to be a C plane or an R plane. Here, the C chamfering is a process of cutting the intersecting corner surface part by 45-, and the R chamfering is a process of rounding the intersecting corner surface part.

(Second Embodiment)
In the present invention, the photoelectric conversion element may be, for example, a thin film photoelectric conversion element 20 as shown in FIG. The photoelectric conversion element 20 includes a semiconductor layer in which a plurality of semiconductor layers are stacked (that is, a semiconductor layer 16 that exhibits p-type and a semiconductor layer 17 that exhibits n + -type), a semiconductor that exhibits p + -type, and one electrode 18. The anti-reflection layer 19 and the other electrode 7 (for example, finger electrode) are included.

  The p-type semiconductor layer 16 is a layer in which B, Al, Ga, etc. exhibiting p-type are included in Si. The semiconductor layer 17 exhibiting n + type is formed on the semiconductor layer 16 exhibiting p-type by applying a semiconductor material containing P, As or the like exhibiting n-type, or by thermal diffusion or the like using a gas. Provided by.

  The p + type semiconductor and the one electrode 18 are either a mixture of a semiconductor paste containing a semiconductor material containing B +, Al, Ga, etc., showing a p + type, and a metal paste containing silver or the like serving as an electrode. A semiconductor paste layer and a metal paste layer are stacked and fired.

The antireflection layer 19 is made of one or more kinds of oxide films selected from SiO ₂ , SiN, and the like, and is formed by a sputtering method, a vapor phase growth method, or the like.

  The other electrode 7 is formed, for example, by pattern-etching the antireflection layer 19 and then applying and baking a metal paste containing silver or the like that exhibits conductivity.

  In order to prevent oxidation, a solder layer may be coated on one electrode 18 and the other electrode 7.

  A collector electrode such as a bus bar electrode is provided on one electrode 18 and the other electrode 7, and the electrodes 7 are connected to each other by this collector electrode. As the collector electrode, a copper core material whose surface is coated with solder is mainly used. Other configurations are the same as those in FIGS.

(Third embodiment)
In the present invention, as shown in FIG. 9, a part of the reinforcing member 12 is embedded in the end of the translucent substrate 9, and the mounting hole 13 provided in the reinforcing member 12 and its peripheral portion are exposed to the outside. It may be provided so as to be exposed. And it can be set as the structure which can endure a mechanical load test without the drop-off | omission of a photoelectric conversion module by fixing with the attachment metal fitting 14 through the said attachment hole 13. FIG.

  As shown in FIGS. 10A and 10C, the reinforcing member 12 is formed so as to protrude across the entire surface of the two opposing sides of the photoelectric conversion module, and the mounting hole 13 is provided in the protruding portion. In addition, as shown in FIG. 10B, only the portion where the attachment hole 13 is provided may protrude from the side surface of the photoelectric conversion module. Further, the reinforcing member 12 is not necessarily arranged on one entire side surface of the photoelectric conversion module. If the strength of the mounting hole 13 and the pressing effect on the curved surface 15 are obtained, the reinforcing member 12 may be disposed on a part of one side surface of the photoelectric conversion module. A small reinforcing member 12 composed of the mounting hole 13 and its peripheral portion may be disposed.

  Here, the configuration is the same as that of the above-described first embodiment except that the mounting hole 13 provided in the reinforcing member 12 and the surrounding portion thereof are provided as described above so as to be exposed to the outside.

  In the first to third embodiments described above, the collector electrode for collecting the current generated by the photoelectric conversion element 8 (20) is parallel to the side surface of the reinforcing member 12 formed on the side surface of the photoelectric conversion module. It is desirable that they are arranged. Thereby, when attaching a photoelectric conversion module to a plane or a curved surface, since the reinforcing member 12 suppresses bending and bending, it is possible to prevent the collector electrode portion 7a from being broken or damaged. Further, as shown in FIG. 4, the collector electrode is formed so as to extend in a direction (vertical direction in FIG. 4) orthogonal to the bending direction (lateral direction in FIG. 4) of the photoelectric conversion module, and the reinforcing member 12 is the collector member. It is preferable to be formed parallel to the electrode. For example, a foil-like rectangular collector electrode is connected to the upper and lower substrates in order to connect three photoelectric conversion elements (photoelectric conversion cells) provided in a row in series. By forming it in parallel with the side surface of the plate, no force is applied in the peeling direction. In this case, breakage of the joint portion of the photoelectric conversion element 8 of the collector electrode can be effectively prevented. The collector electrode is formed to extend in a direction (lateral direction in FIG. 4) parallel to the bending direction of the photoelectric conversion module (lateral direction in FIG. 4), and the reinforcing member 12 is formed in parallel to the collector electrode. In this case as well, since the reinforcing member 12 suppresses excessive bending and bending, breakage of the joint portion of the photoelectric conversion element 8 of the collector electrode can be effectively suppressed.

  In addition, it is set as the photoelectric conversion module which provided one photoelectric conversion element mentioned above, or connected multiple (connected in series, parallel, or series-parallel), and also provided one photoelectric conversion module, or connected multiple (series, What is connected in parallel or in series and parallel) may be used as the power generation means, and the generated power may be supplied directly from the power generation means to the DC load. In addition, after the power generation means described above is converted into appropriate AC power via power conversion means such as an inverter, it is possible to supply this generated power to an AC load such as a commercial power system or various electric devices. It is good also as a simple power generator. Furthermore, it is also possible to use such a power generation device as a photovoltaic power generation device such as a solar power generation system in various modes by installing it on the roof or wall of a building with good sunlight.

  Embodiments of the photoelectric conversion module of the present invention will be specifically described below with reference to FIGS.

  First, the photoelectric conversion element 8 was produced as follows. A conductive substrate made of aluminum, which is one electrode, using a large number of crystalline semiconductor particles 2 in which an n-type silicon layer 4 is formed on the surface of p-type crystalline silicon particles having a diameter of about 0.2 to 0.6 mm. A large number of crystalline semiconductor particles 2 were disposed on 1 and heated for about 10 minutes at a temperature equal to or higher than 577 ° C., which is the eutectic temperature of aluminum and silicon, to bond the crystalline semiconductor particles 2 to the conductive substrate 1.

  Thereafter, only the upper part of the crystalline semiconductor particles 2 was covered with a resist layer, and pn separation was performed by etching with a mixed acid of hydrofluoric acid nitric acid. After removing the resist layer, the insulating material 5 made of resin was filled in the pn separation portion.

  Next, the upper surface of the crystalline semiconductor particles 2 was washed, and an ITO film was formed to a thickness of 80 nm as the translucent conductor layer 6 which is the other electrode. A finger electrode was formed thereon with a conductive paste in which a thermosetting epoxy resin and silver powder were mixed, and cured at 200 ° C. Furthermore, the bus-bar electrode which consists of a copper ribbon was attached to the translucent conductor layer 6 and the electroconductive board | substrate 1, the adjacent crystal semiconductor particles 2 were connected, and the photoelectric conversion element 8 was produced.

  Moreover, the photoelectric conversion element 20 shown in FIG. 8 was produced as follows. First, the semiconductor layer 17 exhibiting n + type was formed by exposing the semiconductor 16 exhibiting p-type to a gas containing P and thermally diffusing P on one main surface.

  Next, a metal paste containing Al powder was applied to the other main surface of the semiconductor 16 and baked, and a paste containing silver or the like serving as an electrode was applied and baked to form a p + type semiconductor and one electrode 18. .

  Thereafter, one main surface of the semiconductor 16 was treated with hydrofluoric acid, and then SiN was formed on the semiconductor layer 17 by vapor deposition or the like to form the antireflection layer 19. After pattern-etching the formed antireflection layer 19, the other electrode 7 was formed by applying and baking a metal paste containing silver or the like exhibiting conductivity.

  Next, a solder layer is coated on one electrode 18 and the other electrode 7, and then a bus bar electrode in which the surface of the copper core material is coated with the solder layer is provided on the one electrode 18 and the other electrode 7. The electrodes were connected, the photoelectric conversion elements were connected, and the photoelectric conversion element 20 was produced.

  Next, using the photoelectric conversion element 8 obtained above, a transparent PVF film is used as the first protective layer 10 in FIG. 1, a white PVF film is used as the second protective layer 11, and ethylene is used for the translucent substrate 9. By using a vinyl acetate polymer (EVA), a photoelectric conversion element 8 and a reinforcing member 12 having a length of 40 mm and a width of 10 mm in which a mounting hole 13 has been previously formed are disposed as shown in FIG. 2 and laminated by a laminator. A photoelectric conversion module was produced. The photoelectric conversion module has a combination of the constituent material of the reinforcing member 12 and the distance from the end face of the photoelectric conversion module as the position of the mounting hole 13 as shown in Table 1. 1 to 16 photoelectric conversion modules were produced.

  Sample No. Samples 13 and 14 were samples in which the reinforcing member 12 was not used. Reference numerals 15 and 16 are samples in which the reinforcing member 12 is stacked not from the inside of the photoelectric conversion module but from above the photoelectric conversion module and fixed by the mounting bracket 14.

(Evaluation test and evaluation results)
Next, sample No. of the obtained photoelectric conversion module was obtained. The following mechanical load tests were performed using 1-16.

  First, only the photoelectric conversion module was fixed to the fixing base with screws through the attachment holes 13. And it fixed so that there was no fixed base except the reinforcement member 12 part, and put the sand bag so that the pressure of 2400 Pa might be applied to the whole photoelectric conversion module, and the fallen state from the fixed base of the photoelectric conversion module was investigated.

The results are shown in Table 1. In Table 1, as for the mechanical load test result, ○ indicates no dropout from the fixed base, and × indicates dropout from the fixed base.

  As shown in Table 1, the sample No. in which the reinforcing member 12 was not used was used. In the case of Nos. 13 and 14, the distance from the end face of the photoelectric conversion module of the mounting hole 13 was required to be about 8 mm in order to prevent the dropping in the mechanical load test. In addition, the sample member No. 1 in which the reinforcing member 12 is overlaid on the photoelectric conversion module and fixed by the mounting bracket 14 is used. In Nos. 15 and 16, the distance from the end face of the photoelectric conversion module of the mounting hole 13 is about 7 mm. On the other hand, the sample No. in the condition within the scope of the present invention. In Nos. 1 to 12, by using various reinforcing members 12, if the distance of the embedded width from the end face of the photoelectric conversion module was 1 mm or more, it did not fall off in the mechanical load test.

  When the photoelectric conversion module is fixed to the cylindrical curved surface 15 having a diameter of 300 mm, the sample No. 15 and 16, a gap of about 5 mm between the photoelectric conversion module and the curved surface 15 is generated. In 1 to 12, no gap was generated.

  Moreover, in the photoelectric conversion module of the present invention, no disconnection or breakage of the bus bar electrode occurred.

  Another embodiment of the photoelectric conversion module of the present invention will be specifically described below with reference to FIGS.

  First, using the photoelectric conversion element 8 produced in Example 1, a transparent PVF film was used as the first protective layer 10, a white PVF film was used as the second protective layer 11, and ethylene vinyl acetate was used as the translucent substrate 9. Using the polymer (EVA), the photoelectric conversion element 8 and the reinforcing member 12 having a length of 40 mm and a width of 15 mm, in which the mounting holes 13 are formed in advance, are arranged as shown in FIGS. Then, the photoelectric conversion module was produced by sandwiching and laminating with a laminator.

  Sample No. 17 to 24 show the reinforcing member 12 in the shape of FIG. 25, the reinforcing member 12 was placed in the shape of FIG. 10B, sandwiched, and laminated with a laminator to produce a photoelectric conversion module. Sample No. 26, the reinforcing member 12 is arranged and sandwiched in the shape of FIG. 10C, laminated with a laminator, and then the first protective layer 10, the translucent substrate 9, and the second protective layer around the mounting hole 13. The photoelectric conversion module was produced by removing 11. The photoelectric conversion module has a combination of the constituent material of the reinforcing member 12 and the distance from the end face of the photoelectric conversion module as the position of the mounting hole 13 as shown in Table 2. 17 to 34 photoelectric conversion modules were produced.

  Sample No. 31 and 32 are samples in which the reinforcing member 12 was not used.

(Evaluation test and evaluation results)
Next, sample No. of the obtained photoelectric conversion module was obtained. A mechanical load test was conducted in the same manner as in Example 1 using 17-32. The results are shown in Table 2. In Table 2, as for the mechanical load test results, ○ indicates no drop off from the fixed base, and × indicates drop off from the fixed base.

  As shown in Table 2, the sample No. in which the reinforcing member 12 was not used was used. In the case of 31 and 32, the distance from the end face of the photoelectric conversion module of the mounting hole 13 is required to be about 8 mm in order to prevent the dropping in the mechanical load test.

  In contrast, sample no. In Nos. 17 to 26, by using various reinforcing members 12, if the distance of the embedded width from the end face of the photoelectric conversion module was 3 mm or more, it did not fall off in the mechanical load test.

  In addition, when the photoelectric conversion module is fixed to the cylindrical curved surface 15 having a diameter of 300 mm, a gap between the photoelectric conversion module and the curved surface 15 having a condition outside the range of the present invention is generated by about 5 mm. No gap occurred in any of the photoelectric conversion modules.

  Moreover, in the photoelectric conversion module of the present invention, no disconnection or breakage of the bus bar electrode occurred.

Sample No. produced in Example 2 above. Using 20, 25 and 26, the test was repeated 100 times with the screw through the mounting hole 13 on the fixing base, and the strength against peeling was examined. The results are shown in Table 3. In Table 3, in the desorption test, ◯ indicates that the reinforcing member is not peeled, and × indicates that the reinforcing member is peeled off.

  As shown in Table 3, in the photoelectric conversion module of the present invention, the various members around the mounting hole 13 and the protective layers 10, 11 and the like are not peeled off even after 100 times of desorption operation (◯), compared with the initial value. No change was seen.

  Moreover, in the photoelectric conversion module of the present invention, no disconnection or breakage of the bus bar electrode occurred.

  In addition, this invention is not limited to the above embodiment and Example, A various change may be added in the range which does not deviate from the summary of this invention.

It is sectional drawing which shows 1st Embodiment of the photoelectric conversion module of this invention. It is a top view of the photoelectric conversion module of FIG. (A), (b) is a partial cross section figure of two examples of the photoelectric conversion element used for the photoelectric conversion module of FIG. It is a perspective view which shows the installation state to the curved surface of the photoelectric conversion module of FIG. It is sectional drawing of the photoelectric conversion module of a comparative example. It is a top view of the photoelectric conversion module of FIG. It is a perspective view which shows the installation state to the curved surface of the photoelectric conversion module of FIG. It is a partial cross section figure of the photoelectric conversion element which shows 2nd Embodiment of the photoelectric conversion module of this invention, and is used for a photoelectric conversion module. It is sectional drawing which shows 3rd Embodiment of the photoelectric conversion module of this invention. (A)-(c) is a top view of three examples of the photoelectric conversion module of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 .... Conductive substrate 2 .... Crystalline semiconductor particle 3 .... First conductivity type semiconductor 4 .... Second conductivity type semiconductor layer 5 .... Insulating material 6 ....・ Translucent conductor layer 7... The other electrode (collector electrode)
8... Photoelectric conversion element 9... Translucent substrate 10 ... 1st protective layer 11 ... 2nd protective layer 12 ... Reinforcement member 13 ... Mounting hole 14.・ Mounting bracket 15... Curved surface 16... P-type semiconductor 17... N + -type semiconductor layer 18... P + -type semiconductor and one electrode 19.・ Examples of other photoelectric conversion elements 21: Clearance with curved surface

Claims (6)

  A plurality of one-conductivity-type crystalline semiconductor particles are bonded to one main surface of a conductive substrate at the bottom, and an insulating material is interposed between the adjacent ones, and an upper portion is exposed from the insulating material. The other conductive type semiconductor portion and the translucent conductor layer are formed on these crystalline semiconductor particles, and a photoelectric conversion element in which a collector electrode is formed on the translucent conductor layer, and the photoelectric conversion element inside A flexible translucent substrate embedded; a translucent first protective layer provided on the light-receiving surface side of the translucent substrate; and a side opposite to the light-receiving surface of the translucent substrate. A photoelectric conversion comprising: a second protective layer provided on a surface; and a reinforcing member embedded in an outer peripheral portion of the translucent substrate and having a mounting hole for external mounting. module.   A semiconductor layer portion in which a plurality of semiconductor layers are stacked; a light-receiving surface electrode portion provided on a light-receiving surface side of the semiconductor layer portion; and a back-surface electrode portion provided on a back surface side of the semiconductor layer portion; A photoelectric conversion element having a collector electrode formed on an electrode portion, a flexible translucent substrate in which the photoelectric conversion element is embedded, and a translucent substrate provided on the light-receiving surface side of the translucent substrate A first protective layer of light, a second protective layer provided on the surface opposite to the light receiving surface of the translucent substrate, and embedded in an outer peripheral portion of the translucent substrate and for external mounting. A photoelectric conversion module comprising a reinforcing member in which a mounting hole is formed.   3. The photoelectric conversion module according to claim 1, wherein a part of the reinforcing member is exposed to the outside and the attachment hole is formed in the exposed portion. 4.   The translucent substrate has a rectangular shape, the collector electrode is formed in parallel with two opposite sides of the rectangle, the reinforcing member has a long plate shape, and the collector of the translucent substrate. The photoelectric conversion module according to claim 1, wherein the photoelectric conversion module is provided on two opposing sides parallel to the electrode.   5. The photoelectric conversion module according to claim 4, wherein the reinforcing member is embedded in the outer peripheral portion of the translucent substrate between both end portions of the outer peripheral portion in the arrangement direction of the collector electrode.   The photoelectric conversion module according to claim 1, wherein the collector electrode is made of a conductive plate.

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