JP2007281230A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which increases inductance of an inductor and possesses the inductor excellent in characteristics, in the semiconductor device equipped with the solenoid-shaped inductor. <P>SOLUTION: The semiconductor device comprises: a semiconductor substrate equipped with an electrode in at least one surface; a first magnetic layer and a first insulating resin layer which are arranged in order so as to cover the one surface of the semiconductor substrate; a first electric conductive layer which is arranged on the first insulating resin layer, and electrically connected with the electrode; and a second insulating resin layer, a second magnetic layer, a third insulating resin layer, a second electric conductive layer, a fourth insulating resin layer, and a third magnetic layer which are arranged in order on the first electric conductive layer. The first electric conductive layer and the second electric conductive layer are connected electrically, thus constituting a solenoid-shaped inductance element. The first magnetic layer, the second magnetic layer, and the third magnetic layer are brought into contact so that a closed magnetic circuit may be constituted. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device including an inductor on a semiconductor substrate such as a silicon wafer and a method for manufacturing the same.

In recent years, inductive elements such as inductors tend to be integrated on a semiconductor substrate in order to reduce costs and chip components.
When forming a spiral inductor on the surface of a silicon substrate, part of the electromagnetic energy generated by the inductor is lost in the silicon substrate and the wiring forming the inductor due to the parasitic capacitance between the wiring and the lower substrate.

  One cause of the loss of electromagnetic energy is the short distance between the silicon substrate and the spiral inductor. Therefore, by using a wafer level CSP (chip scale package) copper plating rewiring process and using a thick film resin as an insulating layer, the distance between the inductor and the substrate is increased, and the wiring resistance is reduced. Inductors that achieve Q values have been developed.

FIG. 5 is a drawing showing an example of a conventional semiconductor device having a spiral inductor, in which FIG. 12 (a) is a partially cutaway perspective view and FIG. 12 (b) is a sectional view.
In this semiconductor device 40, an electrode 2 of an integrated circuit (IC) and a passivation film 3 (insulating layer) are formed on one surface of the semiconductor substrate 1 on which the integrated circuit 4 is formed. Further, a first insulating resin layer 41 is provided on the passivation film 3 of the semiconductor substrate 1, and a lower wiring layer electrically connected to the electrode 2 is provided on the first insulating resin layer 41. 42 is formed. Further, a second insulating resin layer 43 is formed so as to cover the semiconductor substrate 1 and the lower wiring layer 42, and an upper wiring having a spiral inductor 45 as an inductive element is formed on the second insulating resin layer 43. A layer 44 is provided. The spiral inductor 45 is electrically connected to the electrode 2 of the integrated circuit 4 through the lower wiring layer 43.

  However, in such a semiconductor device, although the inductor is separated from the semiconductor substrate by the insulating resin layer, there is still a magnetic flux passing through the semiconductor substrate, and the device cannot be installed directly under the inductor. Sometimes.

In order to solve the above problem, meander type inductors are also used. However, the inductance value is small and a desired value may not be satisfied. Further, when trying to obtain a large inductance value, the size of the inductor becomes large.
For example, although a proposal has been made to apply a magnetic material to a solenoid type inductor (see Patent Document 1), a sufficient effect is not obtained because the volume of the ferromagnetic material is small and a closed magnetic circuit is not formed. .
JP 2003-203982 A

  The present invention has been devised in view of the above circumstances, and it is a semiconductor device provided with a solenoid-shaped inductive element to provide a semiconductor device that has a large inductance value and that can be reduced in size. One purpose. A second object of the present invention is to provide a method for manufacturing a semiconductor device in which a magnetic circuit is formed so as to promote an increase in inductance value of a solenoid-shaped inductive element.

According to a first aspect of the present invention, there is provided a semiconductor device having an electrode on at least one surface, a first magnetic layer and a first insulating resin layer sequentially disposed so as to cover one surface of the semiconductor substrate. A first conductive layer disposed on the first insulating resin layer and electrically connected to the electrode; a second insulating resin layer disposed in order on the first conductive layer; A magnetic layer, a third insulating resin layer, a second conductive layer, a fourth insulating resin layer, and a third magnetic layer, wherein the first conductive layer and the second conductive layer are electrically Are connected to each other and constitute a solenoid-shaped inductive element in which a magnetic field formed by a current flowing in the two conductive layers is arranged along the surface of the semiconductor substrate. The second magnetic layer is in contact with each other to form a closed magnetic circuit.
According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the third magnetic layer is in contact with the second magnetic layer to form a closed magnetic circuit.
According to a third aspect of the present invention, in the semiconductor device according to the first or second aspect, the first conductive layer and the second conductive layer are made of copper plating.
According to a fourth aspect of the present invention, in any one of the first to third aspects, the first insulating resin layer to the fourth insulating resin layer are made of a photosensitive resin.
According to a fifth aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: a semiconductor substrate provided with an electrode on at least one surface; a first magnetic layer and a first insulation arranged in order so as to cover one surface of the semiconductor substrate; A resin layer, a first conductive layer disposed on the first insulating resin layer and electrically connected to the electrode, and a second insulating resin layer sequentially disposed on the first conductive layer , A second magnetic layer, a third insulating resin layer, a second conductive layer, a fourth insulating resin layer, and a third magnetic layer, wherein the first conductive layer and the second conductive layer Constitutes a solenoid-shaped inductive element in which a magnetic field formed by a current flowing in the two conductive layers is arranged along the surface of the semiconductor substrate, and the first magnetic A method of manufacturing a semiconductor device in which a layer and a second magnetic layer are in contact with each other to form a closed magnetic circuit, And forming the second magnetic layer in contact with the first magnetic layer.
According to a sixth aspect of the present invention, there is provided a method for manufacturing a semiconductor device according to the fifth aspect, wherein the third magnetic layer is formed so as to be in contact with the second magnetic layer.
According to a seventh aspect of the present invention, in the method for manufacturing a semiconductor device according to the fifth or sixth aspect, the first conductive layer and the second conductive layer are formed by copper plating.
The method for manufacturing a semiconductor device according to claim 8 of the present invention is characterized in that in any one of claims 5 to 7, the fourth insulating resin is formed from the first insulating resin layer by a photosensitive resin. And

  In the present invention, the closed magnetic circuit can be configured by covering the solenoid-shaped inductive element with the first magnetic layer or the third magnetic layer and bringing the first magnetic layer or the third magnetic layer into contact with each other. . As a result, a semiconductor device capable of achieving both an increase in inductance value and a reduction in size of the inductive element can be obtained. In the present invention, the solenoid-shaped inductive element is covered with the first magnetic layer to the third magnetic layer, and the first magnetic layer to the third magnetic layer are formed in contact with each other. Thereby, the second object can be solved, and a method for manufacturing a semiconductor device capable of achieving both an increase in inductance value and a reduction in size of the inductive element can be provided.

  Hereinafter, an embodiment of a semiconductor device according to the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional view illustrating an example of a semiconductor device of the present invention, and FIGS. 2 to 11 are a cross-sectional view and a plan view illustrating an example of a method of manufacturing a semiconductor device according to the present invention in order of steps.
In this semiconductor device 10, an electrode 2 and a passivation film 3 of an integrated circuit (IC, not shown) are formed on the surface of a semiconductor substrate 1 on which an integrated circuit (not shown) is formed.

  Further, the semiconductor device 10 is disposed on the first magnetic resin layer 11 and the first insulating resin layer 12 that are sequentially disposed on the passivation film 3 of the semiconductor substrate 1, and the first insulating resin layer 12. A first conductive layer 13 electrically connected to the electrode 3, a second insulating resin layer 14, a second magnetic layer 15, and a third insulating resin sequentially disposed on the first conductive layer 13. A layer 16, a second conductive layer 17, a fourth insulating resin layer 18, and a third magnetic layer 19.

  In the semiconductor device 10, the first conductive layer 13 and the second conductive layer 17 are electrically connected, and the two conductive layers are arranged in a solenoid shape along the semiconductor substrate surface. Inductive elements (inductors) are configured.

  In the semiconductor device 10 of the present invention, the first magnetic layer 11, the second magnetic layer 15, and the third magnetic layer 19 are in contact with each other to form a closed magnetic circuit. A closed magnetic circuit can be configured by sandwiching a solenoid-shaped inductor between magnetic layers. Thereby, compared with the case where there is no magnetic layer, it is possible to achieve both an increase in inductance value and a reduction in size of the inductor.

  In general, a magnetic material has a larger magnetic permeability than a nonmagnetic material, and the inductance of an inductor covered with a magnetic layer is proportional to the magnetic permeability. For this reason, a large inductance can be obtained by covering the inductor with a magnetic layer.

  It is possible to increase the inductance of the inductor in proportion to the magnetic permeability of the magnetic layer. Therefore, the inductance can be increased to several tens of times (or more depending on the magnetic permeability of the magnetic layer material) by using a magnetic member having a relative magnetic permeability of several hundreds (for example, the magnetic permeability of ferrite is several hundreds). .

  Furthermore, the third magnetic layer 19 is preferably in contact with the second magnetic layer 15 to form a closed magnetic circuit. Thereby, since the first magnetic layer 11 and the second magnetic layer 15, and the second magnetic layer 15 and the third magnetic layer 19 individually form a closed magnetic circuit, the inductance value can be further improved.

The semiconductor substrate 1 is formed by providing, for example, an Al pad as an electrode 2 on one surface of a base material 1a, and further forming a passivation film 3 (insulating film by passivation) such as SiN or SiO ₂ thereon. is there. The passivation film 3 is provided with an opening 3a at a position aligned with the electrode 2, and the electrode 2 is exposed through the opening 3a. The passivation film 3 can be formed by, for example, the LP-CVD method, and the film thickness is, for example, 0.1 to 1 μm.
Here, the electrode 2 for electrically connecting the first conductive layer 13 and the second conductive layer 17 to the integrated circuit is provided at two locations on the surface of the semiconductor substrate 1 (only one location is shown in the figure). Is provided.

  The semiconductor substrate 1 may be a semiconductor wafer such as a silicon wafer, or may be a semiconductor chip obtained by cutting (dicing) the semiconductor wafer into chip dimensions. When the semiconductor substrate 1 is a semiconductor chip, first, a plurality of semiconductor elements, ICs, induction elements, etc. are formed on a semiconductor wafer and then cut into chip dimensions to obtain a plurality of semiconductor chips. Can do.

  The first magnetic layer 11 has an opening 11 a formed at a position aligned with each electrode 2. Further, the first magnetic layer 11 may be larger than the inductor size by at least 50 μm in order to constitute a closed magnetic circuit.

  As a material of the first magnetic layer 11, for example, various magnetic members such as ferrite mainly composed of Ni, Fe and Zn, amorphous metal such as CoNbZr, and ferromagnetic metal such as Ni-Fe (permalloy) are used. The thickness is, for example, 1 to 10 μm. The first magnetic layer 11 can be formed by, for example, a plating method or a sputtering method. The opening 11a can be formed by, for example, patterning using a photolithography technique or a lift-off method.

  The first insulating resin layer 12 has an opening 12 a formed at a position aligned with the electrode 2. The first insulating resin layer 12 is made of, for example, a polyimide resin, an epoxy resin, or a silicone resin, but is preferably made of a photosensitive resin. Thereby, an insulating resin layer can be formed easily. The thickness is, for example, 1 to 30 μm.

  The first insulating resin layer 12 can be formed by, for example, a spin coating method, a printing method, a laminating method, or the like. The openings 12a to 12c can be formed by patterning using a photolithography technique, for example.

  One end of the first conductive layer 13 penetrates the first insulating resin layer 12 through the opening 12 a and is electrically connected to the electrode 2.

  As the material of the first conductive layer 13, for example, Cu or the like is used, and the thickness thereof is, for example, 1 to 20 μm. Thereby, sufficient electrical conductivity is obtained. The first conductive layer 13 can be formed by, for example, a plating method such as an electrolytic copper plating method, a sputtering method, a vapor deposition method, or a combination of two or more methods, but preferably by a plating method. Thereby, a conductive layer can be formed easily.

  The second insulating resin layer 14 is made of, for example, a polyimide resin, an epoxy resin, or a silicone resin, but is preferably made of a photosensitive resin. Thereby, an insulating resin layer can be formed easily. The thickness is, for example, 1 to 30 μm.

  The second insulating resin layer 14 can be formed by, for example, a spin coating method, a printing method, a laminating method, or the like.

  The second magnetic layer 15 is formed so as to be in contact with the first magnetic layer 11 at the ends of the first insulating resin layer 12 and the second insulating resin layer 14. The second magnetic layer 15 is made of, for example, NiZn-based ferrite, amorphous metal such as CoNbZr, ferromagnetic metal such as NiFe (permalloy), and the thickness thereof is, for example, 1 to 10 μm.

  The second magnetic layer 15 can be formed by, for example, a plating method or a sputtering method. The opening 15a can be formed, for example, by patterning using a photolithography technique or a lift-off method.

  The third insulating resin layer 16 is made of, for example, a polyimide resin, an epoxy resin, a silicone resin, or the like, and is preferably made of a photosensitive resin. Thereby, an insulating resin layer can be formed easily. The thickness is, for example, 1 to 30 μm. The third insulating resin layer 16 can be formed by, for example, a spin coating method, a printing method, a laminating method, or the like.

  For example, Cu or the like is used as the material of the second conductive layer 17, and the thickness thereof is, for example, 1 to 20 μm. Thereby, sufficient electrical conductivity is obtained. The second conductive layer 17 can be formed by, for example, a plating method such as an electrolytic copper plating method, a sputtering method, a vapor deposition method, or a combination of two or more methods, but preferably by a plating method. Thereby, a conductive layer can be formed easily.

  The fourth insulating resin layer 18 is made of, for example, a polyimide resin, an epoxy resin, or a silicone resin, but is preferably made of a photosensitive resin. Thereby, an insulating resin layer can be formed easily. The thickness is, for example, 1 to 30 μm. The fourth insulating resin layer 18 can be formed by, for example, a spin coating method, a printing method, a laminating method, or the like.

  The third magnetic layer 19 is formed so as to be in contact with the second magnetic layer 15. The third magnetic layer 19 is made of, for example, NiZn-based ferrite, amorphous metal such as CoNbZr, ferromagnetic metal such as NiFe (permalloy), and the thickness thereof is, for example, 1 to 10 μm.

  A sealing resin layer (not shown) may be provided on the third magnetic layer 19. The sealing resin layer is made of, for example, polyimide resin, epoxy resin, silicone resin, etc., and the thickness thereof is, for example, 10 to 15 μm. The sealing resin layer is provided with an opening for outputting a terminal to the outside. Further, on the sealing resin layer, structures such as output terminals to the outside such as bumps can be added as necessary.

Next, a method for manufacturing the semiconductor device shown in FIG. 1 will be described with reference to FIGS. 2B to 11B are plan views when viewed from above in the stacking direction of the semiconductor device, and FIGS. 2A to 11A are respectively the drawings. It is sectional drawing when it cut | disconnects along the chain line which attached the alphabet respectively shown to (b) of FIGS.
First, as shown in FIGS. 2A and 2B, a semiconductor substrate 1 having an integrated circuit (not shown), an electrode 2 and a passivation film 3 is prepared. As described above, the semiconductor substrate 1 has the electrode 2 and the passivation film 3 formed on one surface of the base material 1 a, and the passivation film 3 has at least a part of the electrode 2 at a position aligned with the electrode 2. The semiconductor wafer is provided with two openings 3a to be exposed. The passivation film 3 is formed by, for example, LP-CVD, and the film thickness is, for example, 0.1 to 1 μm.

  Next, as shown in FIGS. 3A and 3B, a first magnetic layer 11 having an opening 11 a is formed on the passivation film 3 of the semiconductor substrate 1. The thickness is, for example, 1 to 10 μm. At this time, in order to form a closed magnetic circuit, the first magnetic layer 11 may be larger than the inductor size by at least 50 μm.

  The first magnetic layer 11 can be formed, for example, by depositing the above-described magnetic material by a plating method or a sputtering method. At this time, the Al pad and the scribe line of the chip are exposed. Further, the opening 11a is formed by, for example, ion milling, etching by ICP-RIE, or patterning by a photolithography method or a lift-off method.

Next, as shown in FIGS. 4A and 4B, a first insulating resin layer 12 having an opening 12a is formed. The opening part 12a should just be formed in the substantially the same position as the opening part 11a, and the at least one part of the electrode 2 is exposed.
Such a first insulating resin layer 12 is formed by, for example, forming a film made of the above resin on the entire surface of the first magnetic layer 11 by, for example, a spin coating method, a printing method, a laminating method, etc. It can be formed by forming the opening 12a by patterning using the like.

  Next, as shown in FIGS. 5A and 5B, the first conductive layer 13 is formed on the first insulating resin layer 12. The thickness is, for example, 0.1 to 30 μm. The method for forming the first conductive layer 13 in a predetermined region is not particularly limited.

Here, an example of a suitable method for forming the first conductive layer 13 will be described.
First, a thin seed layer (not shown) for electrolytic plating is formed on the entire surface of the first magnetic layer or a necessary region by sputtering or the like. The seed layer is, for example, a laminated body made of a Cu layer and a Cr layer formed by a sputtering method, or a laminated body made of a Cu layer and a Ti layer. Further, it may be an electroless Cu plating layer, a metal thin film layer formed by a vapor deposition method, a coating method, a chemical vapor deposition method (CVD), or the like, or a combination of the above metal layer forming methods. Good.

  Next, a resist film (not shown) for electrolytic plating is formed on the seed layer. The resist film is provided with an opening in a region where the first conductive layer 13 is to be formed, and the seed layer is exposed in the opening. The resist film can be formed by, for example, patterning using a photolithography technique, a method of laminating a film resist, a method of spin-coating a liquid resist, or the like.

  Then, a conductive layer made of Cu or the like is formed on the exposed seed layer using the resist film as a mask by an electrolytic plating method or the like. As described above, after the first conductive layer 13 is formed in a desired region, unnecessary resist film and seed layer are removed by etching, and the first conductive layer 13 is formed in a portion other than the region where the first conductive layer 13 is formed. The insulating resin layer 12 is exposed [see FIGS. 5A and 5B].

Next, as shown in FIGS. 6A and 6B, a second insulating resin layer 14 is formed. In the second insulating resin layer 14, an opening 14 c that exposes the vicinity of the end of each first conductive layer 13 is formed. The first conductive layer 13 is electrically connected to the second conductive layer 17 described later through the opening 14c.
The second insulating resin layer 14 is formed, for example, by forming a film made of the above resin on the entire surface of the substrate by, for example, a spin coating method, a printing method, a laminating method, or the like, and then patterning using a photolithography technique, for example. It can be formed by forming the opening 14c.

  Next, as shown in FIGS. 7A and 7B, the second magnetic layer 15 is formed. The thickness is, for example, 1 to 10 μm. At this time, in order to form a closed magnetic path, the first insulating resin layer 12 and the second insulating resin layer 14 are formed so as to contact the first magnetic layer 11. By connecting the first magnetic layer 11 and the second magnetic layer 15 by this process, a closed magnetic circuit connected so as to cover the first conductive layer 13 is formed, so that leakage of the magnetic field to the outside is prevented. Can be suppressed.

  The second magnetic layer 15 can be formed by depositing the above-described magnetic material by, for example, a plating method or a sputtering method. Further, for example, patterning is performed in a predetermined shape by patterning using a photolithography method or a lift-off method.

Next, as shown in FIGS. 8A and 8B, a third insulating resin layer 16 having an opening 16c is formed. The opening 16c may be an opening that exposes the vicinity of the end of the first conductive layer 13 formed at a position overlapping the opening 14c formed in the steps shown in FIGS. 6A and 6B. .
Such a third insulating resin layer 16 is formed, for example, by forming a film made of the above resin on the entire surface of the second magnetic layer 15 by, for example, a spin coating method, a printing method, a laminating method, etc. What is necessary is just to form the opening part 16c by the patterning etc. which utilized this.

Next, as shown in FIGS. 9A and 9B, a second conductive layer 17 is formed on the third insulating resin layer 16. The thickness is, for example, 1 to 20 μm. The second conductive layer 17 fills the opening portion 14c penetrating the second insulating resin layer 14 and the opening portion 16c penetrating the third insulating resin layer 16, and is adjacent to the first conductive layer 13 at both ends. The first conductive layer 13 and the second conductive layer 17 form a coil having a substantially rectangular cross section as a whole as shown in FIG.
Since the method of providing the second conductive layer 17 in a predetermined region can be performed in substantially the same manner as the method of providing the first conductive layer 13, detailed description thereof is omitted.

  Next, as shown in FIGS. 10A and 10B, a fourth insulating resin layer 18 is formed. For example, the fourth insulating resin layer 18 can be formed by forming a film made of the above resin on the second conductive layer 17 by, for example, a spin coating method, a printing method, a laminating method, or the like.

  Next, as shown in FIGS. 11A and 11B, a third magnetic layer 19 is formed. The thickness is, for example, 1 to 10 μm. At this time, in order to constitute a closed magnetic circuit, the second magnetic layer 15 is formed so as to be in contact with it. By connecting the second magnetic layer 15 and the third magnetic layer 19 in this step, a closed magnetic circuit configured to cover the first conductive layer 13 and the second conductive layer 17 is formed. , Leakage of the magnetic field to the outside can be suppressed.

  The third magnetic layer 19 can be formed by depositing the above-described magnetic material by, for example, a plating method or a sputtering method. Further, for example, patterning is performed in a predetermined shape by patterning using a photolithography method or a lift-off method.

  After the third magnetic layer 19 is formed, a semiconductor chip on which the antenna circuit is packaged can be obtained by dicing a semiconductor wafer on which various structures such as the antenna circuit are formed into predetermined dimensions.

  In the case where a sealing resin layer (not shown) is formed on the third magnetic layer 19, for example, a photosensitive resin such as a photosensitive polyimide resin is patterned by a photolithography technique so that an opening is formed at a desired position. An encapsulating resin layer can be formed. The thickness is, for example, 1 to 30 μm. In addition, the formation method of the sealing resin layer is not limited to this method.

  In the semiconductor device 10 obtained as described above, the inductor having a solenoid shape is covered with the first magnetic layer 11 to the third magnetic layer 19, so that a closed magnetic circuit can be formed. Moreover, since the magnetic flux density is efficiently increased by arranging the magnetic layer in the vicinity of the inductor, it is possible to achieve both an increase in inductance value and a reduction in size of the inductor.

  Although the semiconductor device of the present invention has been described above, the present invention is not limited to this, and can be appropriately changed without departing from the spirit of the invention.

  For example, in the figure, only a portion corresponding to one inductor on the semiconductor substrate is shown, but the present invention can also be applied to a semiconductor device including a plurality of inductors.

Example 1
As shown in FIG. 1, a first magnetic layer 11, a first insulating resin layer 12, a first conductive layer 13, and a second insulating resin layer 14 are formed on a semiconductor substrate 1 that is a silicon substrate. The semiconductor device 10 including the second magnetic layer 15, the third insulating resin layer 16, the second conductive layer 17, the fourth insulating resin layer 18, and the third magnetic layer 19 was manufactured. .

The first to third insulating resin layers were formed by spin-coating a polyimide insulating resin to a thickness of 10 μm.
The first to third magnetic layers were formed by depositing Ni—Zn-based ferrite (permeability 100) to a thickness of 1 μm by sputtering.
The first conductive layer was formed by forming a film having a thickness of 5 μm by electrolytic copper plating. The second conductive layer was formed by forming a film having a thickness of 10 μm by electrolytic copper plating. The first conductive layer and the second conductive layer are electrically connected to form a solenoid-shaped inductor. The number of turns was 5.

(Comparative Example 1)
A semiconductor device was fabricated in the same manner as in the example except that the first to third magnetic layers were not provided.

(Comparative Example 2)
A semiconductor device was fabricated in the same manner as in the example except that the first and third magnetic layers were not provided (only the second magnetic layer was provided).

The inductance value in the semiconductor device manufactured as described above was measured.
In Comparative Example 1 in which the magnetic layer was not provided, the inductance value was 2.2 nH, and in Comparative Example 2 in which the magnetic layer was provided only in the core portion of the inductor, it was 22 nH, whereas the inductors were first to third. It was found that the inductance value was 64 nH in the example in which the magnetic layer was covered and the closed magnetic circuit was configured, and the inductance value increased about 30 times that of the inductor of Comparative Example 1.

  The present invention can be applied to various semiconductor devices having an inductive element such as a non-contact IC tag semiconductor device in which the inductive element functions as an antenna coil.

It is sectional drawing which shows an example of the semiconductor device which concerns on this invention. It is sectional drawing (a) and top view (b) which show an example of the manufacturing method of the semiconductor device which concerns on this invention. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is sectional drawing (a) and the top view (b) which show the process following FIG. It is the partial notch perspective view (a) which shows an example of the conventional semiconductor device, and sectional drawing (b) which shows the principal part. It is a perspective view which shows the connection state of a 1st conductive layer and a 2nd conductive layer.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor substrate, 2 Electrode, 3 Passivation film | membrane, 10 Semiconductor device, 11 1st magnetic layer, 12 1st insulating resin layer, 13 1st conductive layer, 14 2nd insulating resin layer, 15 2nd magnetism Layer, 16 third insulating resin layer, 17 second conductive layer, 18 fourth insulating resin layer, 19 third magnetic layer.

Claims (8)

A semiconductor substrate provided with an electrode on at least one surface, a first magnetic layer and a first insulating resin layer sequentially disposed so as to cover one surface of the semiconductor substrate, and disposed on the first insulating resin layer; A first conductive layer electrically connected to the electrode; a second insulating resin layer disposed in order on the first conductive layer; a second magnetic layer; a third insulating resin layer; A conductive layer, a fourth insulating resin layer, and a third magnetic layer, and a semiconductor device comprising:
The first conductive layer and the second conductive layer are electrically connected, and a magnetic field formed by a current flowing through the two conductive layers is arranged along the surface of the semiconductor substrate. An inductive element,
The first magnetic layer and the second magnetic layer are in contact with each other to form a closed magnetic circuit.   The semiconductor device according to claim 1, wherein the third magnetic layer is in contact with the second magnetic layer to form a closed magnetic circuit.   The semiconductor device according to claim 1, wherein the first conductive layer and the second conductive layer are made of copper plating.   4. The semiconductor device according to claim 1, wherein the first insulating resin layer to the fourth insulating resin layer are made of a photosensitive resin. A semiconductor substrate provided with an electrode on at least one surface, a first magnetic layer and a first insulating resin layer sequentially disposed so as to cover one surface of the semiconductor substrate, and disposed on the first insulating resin layer; A first conductive layer electrically connected to the electrode; a second insulating resin layer disposed in order on the first conductive layer; a second magnetic layer; a third insulating resin layer; A conductive layer, a fourth insulating resin layer, and a third magnetic layer, wherein the first conductive layer and the second conductive layer are electrically connected and flow through the two conductive layers. It constitutes a solenoid-shaped inductive element in which a magnetic field formed by an electric current is arranged along the semiconductor substrate surface, and the first magnetic layer and the second magnetic layer are in contact with each other to form a closed magnetic circuit A method of manufacturing a semiconductor device,
The method of manufacturing a semiconductor device, wherein the second magnetic layer is formed in contact with the first magnetic layer.   6. The method of manufacturing a semiconductor device according to claim 5, wherein the third magnetic layer is formed so as to be in contact with the second magnetic layer.   The method for manufacturing a semiconductor device according to claim 5, wherein the first conductive layer and the second conductive layer are formed by copper plating. 8. The method for manufacturing a semiconductor device according to claim 5, wherein the fourth insulating resin from the first insulating resin layer is formed of a photosensitive resin.

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