JP2007273649A5 - - Google Patents

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Publication number
JP2007273649A5
JP2007273649A5 JP2006096159A JP2006096159A JP2007273649A5 JP 2007273649 A5 JP2007273649 A5 JP 2007273649A5 JP 2006096159 A JP2006096159 A JP 2006096159A JP 2006096159 A JP2006096159 A JP 2006096159A JP 2007273649 A5 JP2007273649 A5 JP 2007273649A5
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JP
Japan
Prior art keywords
semiconductor device
semiconductor layer
substrate
aln
gan
Prior art date
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Pending
Application number
JP2006096159A
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English (en)
Japanese (ja)
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JP2007273649A (ja
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Priority to JP2006096159A priority Critical patent/JP2007273649A/ja
Priority claimed from JP2006096159A external-priority patent/JP2007273649A/ja
Publication of JP2007273649A publication Critical patent/JP2007273649A/ja
Publication of JP2007273649A5 publication Critical patent/JP2007273649A5/ja
Pending legal-status Critical Current

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JP2006096159A 2006-03-30 2006-03-30 半導体装置および半導体装置製造用基板並びにその製造方法 Pending JP2007273649A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006096159A JP2007273649A (ja) 2006-03-30 2006-03-30 半導体装置および半導体装置製造用基板並びにその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006096159A JP2007273649A (ja) 2006-03-30 2006-03-30 半導体装置および半導体装置製造用基板並びにその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013035044A Division JP5642217B2 (ja) 2013-02-25 2013-02-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2007273649A JP2007273649A (ja) 2007-10-18
JP2007273649A5 true JP2007273649A5 (https=) 2009-05-07

Family

ID=38676154

Family Applications (1)

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JP2006096159A Pending JP2007273649A (ja) 2006-03-30 2006-03-30 半導体装置および半導体装置製造用基板並びにその製造方法

Country Status (1)

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JP (1) JP2007273649A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5509544B2 (ja) * 2008-06-11 2014-06-04 富士通株式会社 半導体装置及びその製造方法
WO2011024367A1 (ja) * 2009-08-27 2011-03-03 パナソニック株式会社 窒化物半導体装置
US8513703B2 (en) * 2010-10-20 2013-08-20 National Semiconductor Corporation Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same
JP5672021B2 (ja) * 2011-01-21 2015-02-18 株式会社Sumco 半導体基板の製造方法
JP5482682B2 (ja) * 2011-02-08 2014-05-07 住友電気工業株式会社 Ｉｉｉ族窒化物半導体電子デバイス、エピタキシャル基板、及びｉｉｉ族窒化物半導体電子デバイスを作製する方法
CN110277311B (zh) * 2018-03-14 2021-07-16 上海大学 提高GaN欧姆接触性能的方法、欧姆接触结构及应用
JP6566069B2 (ja) * 2018-03-22 2019-08-28 富士通株式会社 化合物半導体装置及びその製造方法
CN112201693A (zh) * 2020-09-30 2021-01-08 锐石创芯（深圳）科技有限公司 一种氮化镓半导体器件和制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211902A (ja) * 1994-01-19 1995-08-11 Sony Corp Ｍｉｓ型トランジスタ及びその作製方法
JP3526127B2 (ja) * 1995-03-31 2004-05-10 日本電信電話株式会社 Ｍｏｓトランジスタの製造方法
JP3438116B2 (ja) * 1995-06-06 2003-08-18 富士通株式会社 化合物半導体装置及びその製造方法
TWI240439B (en) * 2003-09-24 2005-09-21 Sanken Electric Co Ltd Nitride semiconductor device and manufacturing method thereof

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