JP2007266253A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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JP2007266253A
JP2007266253A JP2006088483A JP2006088483A JP2007266253A JP 2007266253 A JP2007266253 A JP 2007266253A JP 2006088483 A JP2006088483 A JP 2006088483A JP 2006088483 A JP2006088483 A JP 2006088483A JP 2007266253 A JP2007266253 A JP 2007266253A
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substrate
inner tank
processing apparatus
tank
flow rate
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JP4743768B2 (en
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Tomomi Iwata
智巳 岩田
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of preventing defective drying of a substrate by shifting rising position of a liquid level. <P>SOLUTION: When raising a substrate W from an inner bath 7, a dry air da is jetted in horizontal direction from a jetting nozzle 33 and an air cylinder 55 sets the height of the upper side wall of the inner bath 7 to a dry time level. So, a pure water flows into a second outer bath 49 without being backed up with the upper edge of the inner bath 7. Since the width of the second outer bath 49 is wider than a first outer bath 47 positioned on the upper stream side of the jetting nozzle 33, the pure water rises at the position away from the inner bath 7. So, drying manner is constant regardless of portions of the substrate W that is raised. Further, since the pure water is prevented from splashing due to jetting of the dry air da, defective drying caused by droplets is prevented as well. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体ウエハや液晶表示装置用のガラス基板(以下、単に基板と称する)等の基板を処理液によって処理する基板処理装置に関する。   The present invention relates to a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device (hereinafter simply referred to as a substrate) with a processing liquid.

従来、この種の装置として、処理液を貯留し、基板を処理液に浸漬させて処理する内槽及び内槽から溢れた処理液を回収する外槽を有する処理槽と、基板を起立姿勢で保持するとともに、処理槽内と処理槽の上方にわたって昇降する保持機構と、処理槽の上方に配備され、水平方向に乾燥気体を供給するためのノズルとを備えた基板処理装置がある(例えば、特許文献1参照)。   Conventionally, as this type of apparatus, the processing liquid is stored and the substrate is immersed in the processing liquid, the processing tank having the inner tank and the outer tank for recovering the processing liquid overflowing from the inner tank, and the substrate in an upright posture. There is a substrate processing apparatus that includes a holding mechanism that holds and moves up and down in the processing tank and above the processing tank, and a nozzle that is disposed above the processing tank and supplies dry gas in the horizontal direction (for example, Patent Document 1).

このように構成された装置では、内槽の底部から処理液を供給しつつ内槽での基板に対する処理を終えた後、保持機構を上昇させる際に、内槽の処理液を外槽に溢れさせながらノズルから乾燥気体を供給し、処理液の液面から露出した基板部位を順次に乾燥させる引き上げ乾燥を行う。
特開平11−354486号(図2)
In the apparatus configured as described above, the processing liquid in the inner tank overflows into the outer tank when the holding mechanism is raised after finishing the processing on the substrate in the inner tank while supplying the processing liquid from the bottom of the inner tank. Then, a dry gas is supplied from the nozzle, and the substrate portion exposed from the liquid surface of the processing liquid is pulled up and dried sequentially.
JP-A-11-354486 (FIG. 2)

しかしながら、このような構成を有する従来例の場合には、次のような問題がある。
すなわち、従来の装置は、ノズルから乾燥気体を噴出させた際に、内槽内の液面が下流側に押しやられ、内槽の上縁にてせき止められるようにして、内槽の液面のうちノズルの下流側にあたる部分が盛り上がる現象(およそ1〜2mm)が生じる。すると、内槽の処理液から引き上げられて露出してゆく基板の、ノズルの下流側にあたる部分と、それより上流側にあたる部分とにおいて乾燥具合に差異が生じるという問題がある。詳細には、基板の、ノズルの下流側にあたる部分は、処理液に触れている時間が長くなり、上昇させつつ乾燥させている関係上、短時間で充分に乾燥させることができず乾燥不良が生じやすい。また、乾燥気体の噴射によって液面から飛沫が飛散するが、液面が盛り上がっているノズルの下流側においては、飛沫が多く飛散する。したがって、処理液の飛沫に起因する乾燥不良が生じやすい。
However, the conventional example having such a configuration has the following problems.
That is, when the dry gas is ejected from the nozzle, the conventional apparatus pushes the liquid level in the inner tank to the downstream side and stops at the upper edge of the inner tank. Among them, a phenomenon (approximately 1 to 2 mm) in which the portion corresponding to the downstream side of the nozzle rises occurs. As a result, there is a problem in that the degree of drying differs between the portion of the substrate that is pulled up and exposed from the processing solution in the inner tank and that is on the downstream side of the nozzle and the portion that is on the upstream side. Specifically, the portion of the substrate on the downstream side of the nozzle is in contact with the processing liquid for a long time, and because it is dried while being raised, it cannot be dried sufficiently in a short time, resulting in poor drying. Prone to occur. Further, the spray of the dry gas scatters the spray from the liquid surface, but a lot of the spray scatters on the downstream side of the nozzle where the liquid surface is raised. Therefore, poor drying due to the splash of the processing liquid is likely to occur.

本発明は、このような事情に鑑みてなされたものであって、液面の盛り上がり位置をずらすことにより、基板に乾燥不良が生じることを防止することができる基板処理装置を提供することを目的とする。   The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus that can prevent a substrate from being poorly dried by shifting the rising position of the liquid level. And

本発明は、このような目的を達成するために、次のような構成をとる。
すなわち、請求項1に記載の発明は、基板を処理液で処理する基板処理装置において、処理液を貯留する内槽と、前記内槽の上部にて、水平方向に乾燥気体を噴射する噴射手段と、前記噴射手段の下流側の幅を上流側よりも広く形成され、前記内槽から溢れる処理液を回収する外槽と、基板を支持し、前記内槽の内部にあたる処理位置とその上方にあたる待機位置とにわたって昇降する支持手段と、前記噴射手段の下流側にあたる前記内槽の上部側壁の高さを、処理時高さと、処理時高さよりも低い乾燥時高さとで調整する調整手段と、前記支持手段によって基板を上昇させる際に、前記噴射手段から乾燥気体を噴射させるとともに、前記調整手段により前記内槽の上部側壁の高さを乾燥時高さにする制御手段と、を備えていることを特徴とするものである。
In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is a substrate processing apparatus for processing a substrate with a processing liquid, an inner tank for storing the processing liquid, and an injection means for injecting a dry gas horizontally in the upper part of the inner tank. And the width of the downstream side of the jetting means is wider than the upstream side, the outer tank for collecting the processing liquid overflowing from the inner tank, the substrate is supported, and the processing position corresponding to the inside of the inner tank is above and below A support means that moves up and down over the standby position, and an adjustment means that adjusts the height of the upper side wall of the inner tank, which is downstream of the injection means, by the processing height and the drying height lower than the processing height; And a control means for injecting dry gas from the injection means when raising the substrate by the support means, and for adjusting the height of the upper side wall of the inner tank to the height during drying by the adjustment means. With features Is shall.

[作用・効果]請求項1に記載の発明によれば、制御手段は、支持手段によって基板を内槽から上昇させる際に、噴射手段から水平方向に乾燥気体を噴射させるとともに、調整手段により内槽の上部側壁の高さを乾燥時高さにする。したがって、乾燥気体により下流側に押しやられていた処理液が、内槽の上縁にてせき止められることなく外槽に流れ込む。さらに、外槽の、噴射手段の下流側の幅は、噴射手段の上流側の幅よりも広くされているので、内槽から離れた位置に処理液の盛り上がりが生じる。その結果、内槽の処理液の液面は、ほぼ水平な面を形成するので、引き上げられてゆく基板の部位にかかわらず乾燥具合を均一にできる。その上、乾燥気体の噴射によって処理液が飛散するのを防止できるので、飛沫に起因する乾燥不良も防止することができる。   [Operation / Effect] According to the invention described in claim 1, when the control means raises the substrate from the inner tank by the support means, the control means injects the dry gas in the horizontal direction from the injection means, and the adjustment means The height of the upper side wall of the tank is set to the height when dry. Therefore, the processing liquid pushed to the downstream side by the dry gas flows into the outer tank without being blocked by the upper edge of the inner tank. Furthermore, since the width of the outer tank on the downstream side of the injection means is made wider than the width on the upstream side of the injection means, the processing liquid swells at a position away from the inner tank. As a result, the liquid level of the processing liquid in the inner tank forms a substantially horizontal surface, so that the drying condition can be made uniform regardless of the portion of the substrate being pulled up. In addition, since the treatment liquid can be prevented from being scattered by the injection of the dry gas, poor drying due to the splash can be prevented.

また、本発明において、前記内槽は、前記噴射手段の下流側にあたる上部側壁が、鉛直姿勢と、外槽側への傾斜姿勢とにわたり揺動自在の可動壁を備え、前記調整手段は、前記可動壁の姿勢を調整することが好ましい(請求項2)。調整手段が可動壁の姿勢を鉛直姿勢から傾斜姿勢に変えるだけで、乾燥高さに調整することができ、構成を簡単化することができる。   Further, in the present invention, the inner tank includes a movable wall whose upper side wall on the downstream side of the injection means can swing between a vertical attitude and an inclined attitude toward the outer tank, It is preferable to adjust the posture of the movable wall. The adjustment means can adjust the dry height only by changing the posture of the movable wall from the vertical posture to the inclined posture, and the configuration can be simplified.

また、前記噴射手段の下流側にあたる前記外槽の幅は、基板径が300mm、純水流量が0〜30リットル/分、乾燥気体の流量が6〜10m3/分の場合、30〜70mmであることが好ましい(請求項4)。 The width of the outer tub, which is downstream of the injection means, is 30 to 70 mm when the substrate diameter is 300 mm, the pure water flow rate is 0 to 30 liters / minute, and the dry gas flow rate is 6 to 10 m 3 / minute. It is preferable that there is (claim 4).

また、請求項5に記載の発明は、基板を処理液で処理する基板処理装置において、処理液を貯留する内槽と、前記内槽の上部にて、水平方向に乾燥気体を噴射する噴射手段と、前記噴射手段の下流側の幅を上流側よりも広く形成され、かつ、前記内槽の上縁よりも高い上縁を有し、前記内槽から溢れる処理液を回収する外槽と、前記外槽からの排液流量を調整する流量調整手段と、基板を支持し、前記内槽の内部にあたる処理位置とその上方にあたる待機位置とにわたって昇降する支持手段と、前記支持手段によって基板を上昇させる際に、前記流量調整手段により排液流量を少なくするとともに、前記噴射手段から乾燥気体を噴射させる制御手段と、を備えていることを特徴とするものである。   According to a fifth aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate with a processing liquid, an inner tank for storing the processing liquid, and an injection means for injecting a dry gas horizontally in the upper part of the inner tank. And an outer tank that is formed wider than the upstream side on the downstream side of the injection means and has an upper edge that is higher than the upper edge of the inner tank, and that collects the processing liquid overflowing from the inner tank, A flow rate adjusting means for adjusting the drainage flow rate from the outer tub, a support means for supporting the substrate and moving up and down between a processing position corresponding to the inside of the inner tub and a standby position above the inner tub, and the substrate is lifted by the support means And a control means for reducing the drainage flow rate by the flow rate adjusting means and for injecting dry gas from the injection means.

[作用・効果]請求項5に記載の発明によれば、制御手段は、支持手段によって基板を上昇させる際に、流量調整手段により排液流量を少なくするとともに噴射手段から乾燥気体を噴射させる。したがって、外槽を介して排液されていた処理液が外槽を満たし、処理液の液面が内槽から外槽にわたって一体となる。さらに、外槽の、噴射手段の下流側の幅は、上流側よりも広くされているので、内槽から離れた位置に処理液の盛り上がりが生じる。その結果、内槽の処理液の液面は、ほぼ水平な面を形成するので、引き上げられてゆく基板の部位にかかわらず乾燥具合を均一にできる。その上、乾燥気体の噴射によって処理液が飛散するのを防止できるので、飛沫に起因する乾燥不良も防止することができる。   [Operation / Effect] According to the invention described in claim 5, when the substrate is raised by the support means, the control means causes the flow rate adjusting means to reduce the drainage flow rate and causes the ejection means to inject dry gas. Therefore, the processing liquid drained through the outer tank fills the outer tank, and the liquid level of the processing liquid is integrated from the inner tank to the outer tank. Furthermore, since the width of the outer tank on the downstream side of the injection means is wider than that on the upstream side, the treatment liquid swells at a position away from the inner tank. As a result, the liquid level of the processing liquid in the inner tank forms a substantially horizontal surface, so that the drying condition can be made uniform regardless of the portion of the substrate being pulled up. In addition, since the treatment liquid can be prevented from being scattered by the injection of the dry gas, poor drying due to the splash can be prevented.

また、本発明において、前記外槽の上縁は、前記内槽の上縁より1〜3mm高くされていることが好ましい(請求項6)。外槽を満たした処理液が周囲に溢れるのを防止できる。   Moreover, in this invention, it is preferable that the upper edge of the said outer tank is 1-3 mm higher than the upper edge of the said inner tank (Claim 6). It is possible to prevent the processing liquid filling the outer tank from overflowing around.

本発明に係る基板処理装置によれば、制御手段は、支持手段によって基板を内槽から上昇させる際に、噴射手段から水平方向に乾燥気体を噴射させるとともに、調整手段により内槽の上部側壁の高さを乾燥時高さにする。したがって、乾燥気体により下流側に押しやられていた処理液が、内槽の上縁にてせき止められることなく外槽に流れ込む。さらに、外槽の、噴射手段の下流側の幅は、噴射手段の上流側の幅よりも広くされているので、内槽から離れた位置に処理液の盛り上がりが生じる。その結果、内槽の処理液の液面は、ほぼ水平な面を形成するので、引き上げられてゆく基板の部位にかかわらず乾燥具合を均一にできる。その上、乾燥気体の噴射によって処理液が飛散するのを防止できるので、飛沫に起因する乾燥不良も防止できる。   According to the substrate processing apparatus of the present invention, the control means injects the dry gas in the horizontal direction from the injection means when the substrate is raised from the inner tank by the support means, and the adjustment means causes the upper side wall of the inner tank to be injected. Set height to dry height. Therefore, the processing liquid pushed to the downstream side by the dry gas flows into the outer tank without being blocked by the upper edge of the inner tank. Furthermore, since the width of the outer tank on the downstream side of the injection means is made wider than the width on the upstream side of the injection means, the processing liquid swells at a position away from the inner tank. As a result, the liquid level of the processing liquid in the inner tank forms a substantially horizontal surface, so that the drying condition can be made uniform regardless of the portion of the substrate being pulled up. In addition, since the treatment liquid can be prevented from being scattered by the spray of the dry gas, poor drying due to the splash can be prevented.

以下、図面を参照して本発明の実施例1を説明する。
図1は、実施例1に係る基板処理装置の概略構成を示す全体図である。
Embodiment 1 of the present invention will be described below with reference to the drawings.
FIG. 1 is an overall view illustrating a schematic configuration of the substrate processing apparatus according to the first embodiment.

処理槽1は、外容器3によって周囲を覆われている。この外容器3は、開閉自在の搬入出口5を備えている。処理槽1は、処理液を貯留する内槽7と、内槽7から溢れた処理液を回収するための外槽9とを備えている。外槽9の上縁は、内槽7の上縁とほぼ同じ高さである。内槽7の底部両側には、処理液を供給するための噴出管11が一対配設され、底部には排液口13が形成されている。外容器3の底部には、処理液及び気体を排出するための排出口15が形成されている。   The processing tank 1 is covered with an outer container 3. The outer container 3 includes a loading / unloading port 5 that can be freely opened and closed. The processing tank 1 includes an inner tank 7 for storing the processing liquid and an outer tank 9 for recovering the processing liquid overflowing from the inner tank 7. The upper edge of the outer tub 9 is substantially the same height as the upper edge of the inner tub 7. A pair of ejection pipes 11 for supplying a processing liquid is disposed on both sides of the bottom of the inner tank 7, and a drainage port 13 is formed at the bottom. A discharge port 15 for discharging the processing liquid and gas is formed at the bottom of the outer container 3.

噴出管11には、供給配管17の一端側が連通接続され、その他端側は、純水供給源19に連通接続されている。供給配管17には、下流側から制御弁21と、ミキシングバルブ23とが配設されている。制御弁21は、供給配管19を流通する処理液の流量を調整する機能を備え、ミキシングバルブ23は、供給配管19に種々の薬液を混合する機能を備えている。   One end side of the supply pipe 17 is connected to the ejection pipe 11, and the other end side is connected to the pure water supply source 19. A control valve 21 and a mixing valve 23 are disposed in the supply pipe 17 from the downstream side. The control valve 21 has a function of adjusting the flow rate of the processing liquid flowing through the supply pipe 19, and the mixing valve 23 has a function of mixing various chemical solutions into the supply pipe 19.

本発明における支持手段に相当する支持アーム25は、板状の背板27と、この背板27の下部に配設され、基板Wを起立姿勢で当接支持する支持部材29とを備えている。支持アーム25は、昇降機構31により、外容器3の上方にあたる「待機位置」と、外容器3の内部であって処理槽1の上方にあたる「乾燥位置」と、内槽7の内部にあたる「処理位置」とにわたって昇降自在に構成されている。   The support arm 25 corresponding to the support means in the present invention includes a plate-like back plate 27 and a support member 29 that is disposed below the back plate 27 and supports the substrate W in a standing posture. . The support arm 25 is moved by the elevating mechanism 31 to a “standby position” above the outer container 3, a “drying position” inside the outer container 3 and above the processing tank 1, and a “processing” corresponding to the inside of the inner tank 7. It is configured to be movable up and down over the “position”.

処理槽1の上方であって、外容器3の一方の側壁(図1の左側壁)には、噴射ノズル33が取り付けられている。また、噴射ノズル33に対向する、外容器3の他方の側壁(図1の右側壁)には、排気口35が配設されている。噴射ノズル33には、配管37の一端側が連通接続され、その他端側が気体供給部39に連通接続されている。また、配管37には、制御弁41が取り付けられている。排気口35には、一端側が排気に連通された排気管43の一端側が連通接続されている。排気管43には、制御弁45が設けられている。気体供給部39は、例えば、ドライエアを供給する。なお、ドライエアに代えてドライ窒素などを供給する構成としてもよい。   An injection nozzle 33 is attached to the one side wall (the left side wall in FIG. 1) of the outer container 3 above the processing tank 1. Further, an exhaust port 35 is disposed on the other side wall (the right side wall in FIG. 1) of the outer container 3 facing the injection nozzle 33. One end side of the pipe 37 is connected to the injection nozzle 33, and the other end side is connected to the gas supply unit 39. A control valve 41 is attached to the pipe 37. One end side of an exhaust pipe 43 whose one end side communicates with exhaust is connected to the exhaust port 35 in communication. The exhaust pipe 43 is provided with a control valve 45. The gas supply unit 39 supplies, for example, dry air. Note that dry nitrogen or the like may be supplied instead of dry air.

なお、噴射ノズル33が本発明における噴射手段に相当する。   The injection nozzle 33 corresponds to the injection means in the present invention.

ここで、図2をさらに参照する。なお、図2は、処理槽の縦断面図である。   Reference is now further made to FIG. FIG. 2 is a longitudinal sectional view of the treatment tank.

上述した外槽9は、図1及び図2における左側の第1の外槽47と、第2の外槽49とでは、幅が異なるものとされている。具体的には、噴射ノズル33の下流側にあたる第2の外槽49は、その幅が、上流側にあたる第1の外槽47の幅よりも広く形成されている。その幅は、基板Wの径、基板Wの引き上げ時における処理液の流量、噴射ノズル33からの気体の流量などに応じて設定されている。具体的には、第1の外槽47の幅を25mmとすると、およそ30〜70mmであることが好ましい。なお、第2の外槽49の底部には、排液口48が形成され、ドレインに連通されている。   The width of the first outer tub 47 on the left side in FIGS. 1 and 2 and the second outer tub 49 in the outer tub 9 described above are different. Specifically, the width of the second outer tub 49 on the downstream side of the injection nozzle 33 is wider than the width of the first outer tub 47 on the upstream side. The width is set according to the diameter of the substrate W, the flow rate of the processing liquid when the substrate W is pulled up, the flow rate of the gas from the injection nozzle 33, and the like. Specifically, when the width of the first outer tub 47 is 25 mm, it is preferably approximately 30 to 70 mm. A drain port 48 is formed at the bottom of the second outer tank 49 and communicates with the drain.

内槽7の両上部側壁のうち、第2の外槽49にあたる側は、上部に開口部51が形成されている。この開口部51には、可動壁53が水平軸P周りに揺動自在に取り付けられている。可動壁53の外側壁面の下部には、固定レバー54が突設されている。また、第2の外槽49の下方には、エアシリンダ55が付設されている。その進退自在の作動片57は、先端部が固定レバー54に係合されている。エアシリンダ55の作動片57を伸長させた状態では、可動壁53が鉛直姿勢となって開口部51を閉塞し(図1及び図2の状態)、エアシリンダ55の作動片57を収縮させた状態では、可動壁53が外側への傾斜姿勢となって開口部51を開放する(図2中に二点鎖線で示す状態)。ここでは、可動壁53が開口部51を閉塞する位置を「処理時高さ」、可動壁53が開口部51を開放する位置を「乾燥時高さ」と称する。   Of the upper side walls of the inner tank 7, the side corresponding to the second outer tank 49 has an opening 51 formed in the upper part. A movable wall 53 is attached to the opening 51 so as to be swingable around a horizontal axis P. A fixed lever 54 projects from the lower part of the outer wall surface of the movable wall 53. An air cylinder 55 is attached below the second outer tank 49. The advanceable / retractable operating piece 57 has a distal end engaged with the fixed lever 54. In a state where the operating piece 57 of the air cylinder 55 is extended, the movable wall 53 is in a vertical posture to close the opening 51 (the state shown in FIGS. 1 and 2), and the operating piece 57 of the air cylinder 55 is contracted. In the state, the movable wall 53 is inclined outward and opens the opening 51 (a state indicated by a two-dot chain line in FIG. 2). Here, the position where the movable wall 53 closes the opening 51 is referred to as “processing height”, and the position where the movable wall 53 opens the opening 51 is referred to as “drying height”.

なお、上記のエアシリンダ55が本発明における調整手段に相当する。   The air cylinder 55 described above corresponds to the adjusting means in the present invention.

上述した制御弁21の流量調整、支持アーム25の昇降、気体供給部39による供給、制御弁41の開閉、制御弁45の開閉、エアシリンダ55の駆動などは、本発明における制御手段に相当する制御部59によって統括的に制御される。制御部59は、CPUやメモリなどを備えている。   The above-described flow rate adjustment of the control valve 21, raising and lowering of the support arm 25, supply by the gas supply unit 39, opening and closing of the control valve 41, opening and closing of the control valve 45, driving of the air cylinder 55, etc. The control unit 59 performs overall control. The control unit 59 includes a CPU, a memory, and the like.

次に、図3及び図4を参照して、上述した装置の動作について説明する。なお、図3は処理液による処理時の説明図であり、図4は引き上げ乾燥時の説明図である。   Next, the operation of the above-described apparatus will be described with reference to FIGS. FIG. 3 is an explanatory diagram at the time of processing with the processing liquid, and FIG.

以下では、処理液として純水を供給した状態において基板Wの洗浄処理を行った後、基板Wを引き上げつつ乾燥処理を行う場合を例に採って説明する。なお、支持アーム25は、既に処理位置にあり、可動壁53は、処理高さにあるものとする。   Hereinafter, a case where the substrate W is subjected to the cleaning process while pure water is supplied as the processing liquid, and then the drying process is performed while pulling up the substrate W will be described as an example. Note that the support arm 25 is already in the processing position, and the movable wall 53 is at the processing height.

制御部59は、制御弁21を開放して、所定流量で内槽7に処理液として純水を供給し、処理位置にある基板Wを純水により洗浄する。内槽7に供給された純水は、外槽9にて回収されて排液される。この処理を所定時間だけ行うことにより、基板Wに対する洗浄が完了する(図3)。   The control unit 59 opens the control valve 21, supplies pure water as a processing liquid to the inner tank 7 at a predetermined flow rate, and cleans the substrate W at the processing position with pure water. The pure water supplied to the inner tank 7 is collected in the outer tank 9 and drained. By performing this process for a predetermined time, the cleaning of the substrate W is completed (FIG. 3).

次いで、制御部59は、エアシリンダ55を作動させ、処理時高さにある可動壁53を乾燥時高さに移動させる。これにより、内槽7の開口部51が開放され、第2の外槽49と内槽7の液面の高さが一致される(図3)。さらに、制御部59は、支持アーム25を処理位置から乾燥位置にまで所定の速度で上昇を開始させる。これとともに、制御弁41を開放して、所定流量でドライエアdaを噴射ノズル33から水平方向に噴射させる。噴射されたドライエアdaは、内槽7の液面上方を通過しつつ基板Wを乾燥させ、排気口35を通して排気される。ドライエアdaは、噴射ノズル33から噴射されるとともに、徐々に拡がりつつ排気口35に到達する。したがって、一部が内槽7の液面を排気口35側へ押しやり、液面が盛り上がる現象が生じる。これにより生じた液面の盛り上がりmaは、第2の外槽49に押しやられることになる。この状態で、支持アーム25を乾燥高さまで所定の速度で上昇させて基板Wを乾燥させる。なお、従来装置であれば、内槽7の右上縁でせき止められ、液面の盛り上がり(ma)が内槽7の右側に発生する。   Next, the control unit 59 operates the air cylinder 55 to move the movable wall 53 at the processing height to the drying height. Thereby, the opening part 51 of the inner tank 7 is open | released, and the height of the liquid level of the 2nd outer tank 49 and the inner tank 7 corresponds (FIG. 3). Further, the control unit 59 starts to raise the support arm 25 from the processing position to the drying position at a predetermined speed. At the same time, the control valve 41 is opened, and the dry air da is injected from the injection nozzle 33 in the horizontal direction at a predetermined flow rate. The sprayed dry air da dries the substrate W while passing above the liquid level of the inner tank 7 and is exhausted through the exhaust port 35. The dry air da is ejected from the ejection nozzle 33 and reaches the exhaust port 35 while gradually expanding. Accordingly, a part of the liquid level of the inner tub 7 is pushed toward the exhaust port 35 and the liquid level rises. The liquid level swell ma generated by this is pushed to the second outer tank 49. In this state, the support arm 25 is raised to a drying height at a predetermined speed to dry the substrate W. In addition, if it is a conventional apparatus, it will be dammed by the upper right edge of the inner tank 7, and a liquid level rise (ma) will generate | occur | produce on the right side of the inner tank 7. FIG.

上述したように、制御部59は、支持アーム25によって基板Wを内槽7から上昇させる際に、噴射ノズル33から水平方向にドライエアdaを噴射させるとともに、エアシリンダ55により内槽7の上部側壁の高さを乾燥時高さにする。したがって、ドライエアdaにより下流側に押しやられていた純水が、内槽7の上縁にてせき止められることなく第2の外槽49に流れ込む。さらに、第2の外槽49の幅は、噴射ノズル33の上流側にあたる第1の外槽47の幅よりも広くされているので、内槽7から離れた位置に純水の盛り上がりが生じる。その結果、内槽7の純水の液面は、ほぼ水平な面を形成するので、引き上げられてゆく基板Wの部位にかかわらず乾燥具合を均一にできる。その上、ドライエアdaの噴射によって純水が飛散するのを防止できるので、飛沫に起因する乾燥不良も防止できる。   As described above, when the control unit 59 raises the substrate W from the inner tank 7 by the support arm 25, the control unit 59 ejects the dry air da from the ejection nozzle 33 in the horizontal direction, and the air cylinder 55 causes the upper side wall of the inner tank 7 to be ejected. Set the height to the height when dry. Therefore, the pure water pushed to the downstream side by the dry air da flows into the second outer tank 49 without being blocked by the upper edge of the inner tank 7. Furthermore, since the width of the second outer tub 49 is wider than the width of the first outer tub 47 on the upstream side of the injection nozzle 33, the pure water rises at a position away from the inner tub 7. As a result, the level of pure water in the inner tank 7 forms a substantially horizontal surface, so that the drying condition can be made uniform regardless of the portion of the substrate W that is being pulled up. In addition, since the pure water can be prevented from being scattered by the injection of the dry air da, it is possible to prevent the drying failure caused by the splash.

次に、図面を参照して本発明の実施例2を説明する。
図5は、実施例2に係る基板処理装置の概略構成を示す全体図である。なお、上述した実施例1と同様の構成については、同符号を付して詳細な説明については省略する。
Next, Embodiment 2 of the present invention will be described with reference to the drawings.
FIG. 5 is an overall view illustrating a schematic configuration of the substrate processing apparatus according to the second embodiment. In addition, about the structure similar to Example 1 mentioned above, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

本実施例2は、処理槽1Aの構成が上記実施例1とは大きく相違する。
すなわち、処理槽1Aは、内槽7Aと、外槽9Aとを備えている。噴射ノズル33側には、第1の外槽47Aが、排気口35側には、第2の外槽49Aが配設されている。第2の外槽49Aは、第1の外槽47Aの幅よりも広く構成されている。その広さは、上述した実施例1と同様である。また、外槽9Aは、その上縁が、内槽7Aの上縁よりも高く構成されている。その高さは、1〜3mm程度が好ましい。さらに、第2の外槽49Aの排液口48には、排液管61が連通接続され、ここには流量が調整可能な制御弁63が配設されている。制御部47Aは、流量調整弁21の流量調整、支持アーム25の昇降などに加え、制御弁63による流量を制御する。
The second embodiment is greatly different from the first embodiment in the configuration of the treatment tank 1A.
That is, the processing tank 1A includes an inner tank 7A and an outer tank 9A. A first outer tank 47A is disposed on the injection nozzle 33 side, and a second outer tank 49A is disposed on the exhaust port 35 side. The second outer tub 49A is configured wider than the width of the first outer tub 47A. The area is the same as that of the first embodiment. The outer tub 9A is configured such that the upper edge is higher than the upper edge of the inner tub 7A. The height is preferably about 1 to 3 mm. Further, a drain pipe 61 is connected to the drain port 48 of the second outer tank 49A, and a control valve 63 capable of adjusting the flow rate is disposed here. The control unit 47A controls the flow rate by the control valve 63 in addition to the flow rate adjustment of the flow rate adjustment valve 21, the raising and lowering of the support arm 25, and the like.

制御部59Aは、制御弁63を操作して、外槽9Aからの排液流量を調整する。具体的には、処理液による処理時には、外槽9Aで回収した処理液を円滑にドレインに排出可能な流量(処理時流量)とし、引き上げ乾燥時には、内槽7から溢れた処理液が外槽9Aに回収されるとともに、内槽7の液面と外槽9Aの液面とがほぼ一致するように流量を少なくする(乾燥時流量)。   The controller 59A operates the control valve 63 to adjust the drainage flow rate from the outer tub 9A. Specifically, at the time of processing with the processing liquid, the processing liquid collected in the outer tank 9A is set to a flow rate (flow rate at the time of processing) that can be smoothly discharged to the drain. While being collected by 9A, the flow rate is reduced so that the liquid level of the inner tank 7 and the liquid level of the outer tank 9A substantially coincide (flow rate during drying).

なお、制御部59Aが本発明における制御手段に相当し、制御弁63が本発明における流量調整手段に相当する。   The controller 59A corresponds to the control means in the present invention, and the control valve 63 corresponds to the flow rate adjusting means in the present invention.

次に、図6及び図7を参照して、上記装置の動作について説明する。なお、図6は、処理液による処理時の説明図であり、図7は、引き上げ乾燥時の説明図である。   Next, the operation of the above apparatus will be described with reference to FIGS. 6 is an explanatory diagram at the time of processing with the processing liquid, and FIG. 7 is an explanatory diagram at the time of pulling and drying.

以下では、処理液として純水を供給した状態において基板Wの洗浄処理を行った後、基板Wを引き上げつつ乾燥処理を行う場合を例に採って説明する。なお、支持アーム25は、既に処理位置にあり、制御弁63は処理時流量に設定されているものとする。   Hereinafter, a case where the substrate W is subjected to the cleaning process while pure water is supplied as the processing liquid, and then the drying process is performed while pulling up the substrate W will be described as an example. It is assumed that the support arm 25 is already in the processing position and the control valve 63 is set to the processing flow rate.

制御部59Aは、制御弁21を開放して、所定流量で内槽7Aに処理液として純水を供給し、処理位置にある基板Wを純水により洗浄する。内槽7Aに供給された純水は、外槽9Aにて回収されて排液管61を通して廃液される。この処理を所定時間だけ行うことにより、基板Wの洗浄が完了する(図6)。   The control unit 59A opens the control valve 21, supplies pure water as a processing liquid to the inner tank 7A at a predetermined flow rate, and cleans the substrate W at the processing position with pure water. The pure water supplied to the inner tank 7A is collected in the outer tank 9A and discharged through the drain pipe 61. By performing this process for a predetermined time, the cleaning of the substrate W is completed (FIG. 6).

次いで、制御部59Aは、制御弁63を調整し、排液管61の流量を乾燥時流量に設定する。これにより、外槽9Aからの排出流量が少なくされ、第2の外槽49Aと内槽7Aの液面の高さが一致される(図7)。さらに、制御部59Aは、支持アーム25を処理位置から乾燥高さにまで、所定の速度で上昇を開始させる。これとともに、制御弁41を開放して、所定流量でドライエアdaを噴射ノズル33から水平方向に噴射させる。噴射されたドライエアdaは、内槽7Aの液面上方を通過しつつ基板Wを乾燥させ、排気口35を通して排気される。ドライエアdaは、噴射ノズル33から噴射されるとともに、徐々に拡がりつつ排気口35に到達する。したがって、一部が内槽7Aの液面を排気口35側へ押しやり、液面が盛り上がる現象が生じる。これにより生じた液面の盛り上がりmaは、第2の外槽49Aに押しやられることになる。なお、従来装置であれば、内槽7Aの右上縁でせき止められ、液面の盛り上がり(ma)が内槽7Aの右側に発生する。この状態で、支持アーム25を乾燥高さまで所定の速度で上昇させて基板Wを乾燥させる。   Next, the control unit 59A adjusts the control valve 63 to set the flow rate of the drainage pipe 61 to the dry flow rate. Thereby, the discharge flow rate from the outer tank 9A is reduced, and the liquid level heights of the second outer tank 49A and the inner tank 7A are matched (FIG. 7). Further, the control unit 59A starts to raise the support arm 25 from the processing position to the drying height at a predetermined speed. At the same time, the control valve 41 is opened, and the dry air da is injected from the injection nozzle 33 in the horizontal direction at a predetermined flow rate. The injected dry air da dries the substrate W while passing above the liquid level of the inner tank 7A, and is exhausted through the exhaust port 35. The dry air da is ejected from the ejection nozzle 33 and reaches the exhaust port 35 while gradually expanding. Therefore, a part of the liquid level of the inner tank 7A pushes toward the exhaust port 35, and the liquid level rises. The liquid level swell ma generated thereby is pushed to the second outer tank 49A. In addition, if it is a conventional apparatus, it will be dammed by the upper right edge of the inner tank 7A, and the rise (ma) of a liquid level generate | occur | produces on the right side of the inner tank 7A. In this state, the support arm 25 is raised to a drying height at a predetermined speed to dry the substrate W.

上述したように、制御部59Aは、支持アーム25によって基板Wを内槽7Aから上昇させる際に、噴射ノズル33から水平方向にドライエアdaを噴射させるとともに、外槽49Aからの排液流量を少なくする。したがって、外槽49Aを介して排液されていた純水が外槽49Aを満たし、純水の液面が内槽7Aから外槽49Aにわたって一体となる。さらに、第2の外槽49Aの幅は、上流側の第1の外槽47Aよりも広くされているので、内槽7Aから離れた位置に純水の盛り上がりが生じる。その結果、内槽7Aの純水の液面は、ほぼ水平な面を形成するので、引き上げられてゆく基板Wの部位にかかわらず乾燥具合を均一にできる。その上、ドライエアdaの噴射によって純水が飛散するのを防止できるので、飛沫に起因する乾燥不良も防止することができる。   As described above, when the substrate 59 is lifted from the inner tank 7A by the support arm 25, the control unit 59A ejects the dry air da from the ejection nozzle 33 in the horizontal direction, and reduces the drainage flow rate from the outer tank 49A. To do. Therefore, the pure water drained through the outer tank 49A fills the outer tank 49A, and the liquid level of the pure water is integrated from the inner tank 7A to the outer tank 49A. Furthermore, since the width of the second outer tank 49A is wider than that of the first outer tank 47A on the upstream side, the swell of pure water occurs at a position away from the inner tank 7A. As a result, the level of pure water in the inner tank 7A forms a substantially horizontal surface, so that the drying condition can be made uniform regardless of the portion of the substrate W that is being pulled up. In addition, since it is possible to prevent the pure water from being scattered by the injection of the dry air da, it is possible to prevent poor drying due to the splash.

本発明は、上記実施形態に限られることはなく、下記のように変形実施することができる。   The present invention is not limited to the above embodiment, and can be modified as follows.

(1)上述した実施例1では、エアシリンダ55により可動壁53を揺動させて処理高さと乾燥高さにわたり調整したが、問えば、可動壁53を鉛直姿勢のまま、昇降させて高さを調整するように構成してもよい。また、姿勢を調整するのにエアシリンダ55を使わず、螺軸などを用いてもよい。   (1) In the first embodiment described above, the movable wall 53 is swung by the air cylinder 55 to adjust the processing height and the drying height. For example, the movable wall 53 is moved up and down while maintaining the vertical posture. You may comprise so that it may adjust. Further, a screw shaft or the like may be used instead of the air cylinder 55 to adjust the posture.

(2)上述した実施例1では、内槽7と外槽9の上縁とがほぼ同じ高さとしているが、本発明はこれらの高さ関係に係わらず実施可能である。   (2) In Example 1 mentioned above, although the upper edge of the inner tank 7 and the upper edge of the outer tank 9 is made into the substantially same height, this invention can be implemented irrespective of these height relationships.

(3)上述した実施例2では、制御弁63を操作して外槽9Aからの排液流量を少なくしているが、開閉弁による開閉時間を調整して同様に流量を調整してもよい。   (3) In the above-described second embodiment, the drainage flow rate from the outer tub 9A is reduced by operating the control valve 63. However, the flow rate may be similarly adjusted by adjusting the open / close time by the open / close valve. .

(4)上述した各実施例1,2では、処理液を循環させない方式の装置を例に採って説明したが、内槽7(7A)と外槽9(9A)との間で処理液を循環させる方式の装置であっても本発明を適用することが可能である。   (4) In each of the first and second embodiments described above, an example of a device that does not circulate the processing liquid has been described as an example. However, the processing liquid is transferred between the inner tank 7 (7A) and the outer tank 9 (9A). The present invention can also be applied to an apparatus that circulates.

実施例1に係る基板処理装置の概略構成を示す全体図である。1 is an overall view showing a schematic configuration of a substrate processing apparatus according to Embodiment 1. FIG. 処理槽の縦断面図である。It is a longitudinal cross-sectional view of a processing tank. 処理液による処理時の説明図である。It is explanatory drawing at the time of the process by a process liquid. 引き上げ乾燥時の説明図である。It is explanatory drawing at the time of pulling up drying. 実施例2に係る基板処理装置の概略構成を示す全体図である。6 is an overall view showing a schematic configuration of a substrate processing apparatus according to Embodiment 2. FIG. 処理液による処理時の説明図である。It is explanatory drawing at the time of the process by a process liquid. 引き上げ乾燥時の説明図である。It is explanatory drawing at the time of pulling up drying.

符号の説明Explanation of symbols

W … 基板
1 … 処理槽
3 … 外容器
7 … 内槽
9 … 外槽
11 … 噴出管
13 … 排液口
15 … 排出口
17 … 供給配管
25 … 支持アーム
33 … 噴射ノズル
35 … 排気口
47 … 第1の外槽
49 … 第2の外槽
51 … 開口部
53 … 可動壁
55 … エアシリンダ
59 … 制御部
da … ドライエア
ma … 盛り上がり

W ... Substrate 1 ... Processing tank 3 ... Outer container 7 ... Inner tank 9 ... Outer tank 11 ... Ejection pipe 13 ... Drainage port 15 ... Ejection port 17 ... Supply piping 25 ... Support arm 33 ... Ejection nozzle 35 ... Exhaust port 47 ... First outer tank 49 ... Second outer tank 51 ... Opening 53 ... Movable wall 55 ... Air cylinder 59 ... Control part da ... Dry air ma ... Swelling

Claims (7)

基板を処理液で処理する基板処理装置において、
処理液を貯留する内槽と、
前記内槽の上部にて、水平方向に乾燥気体を噴射する噴射手段と、
前記噴射手段の下流側の幅を上流側よりも広く形成され、前記内槽から溢れる処理液を回収する外槽と、
基板を支持し、前記内槽の内部にあたる処理位置とその上方にあたる待機位置とにわたって昇降する支持手段と、
前記噴射手段の下流側にあたる前記内槽の上部側壁の高さを、処理時高さと、処理時高さよりも低い乾燥時高さとに調整する調整手段と、
前記支持手段によって基板を上昇させる際に、前記噴射手段から乾燥気体を噴射させるとともに、前記調整手段により前記内槽の上部側壁の高さを乾燥時高さにする制御手段と、
を備えていることを特徴とする基板処理装置。
In a substrate processing apparatus for processing a substrate with a processing liquid,
An inner tank for storing the processing liquid;
Injecting means for injecting dry gas horizontally in the upper part of the inner tank,
An outer tub that is formed wider than the upstream side on the downstream side of the injection means, and collects the processing liquid overflowing from the inner tub;
A supporting means for supporting the substrate and moving up and down over a processing position corresponding to the inside of the inner tank and a standby position corresponding to the processing position;
An adjusting means for adjusting the height of the upper side wall of the inner tank on the downstream side of the spraying means to the height during processing and the height during drying lower than the height during processing;
When raising the substrate by the support means, the control means for injecting the dry gas from the injection means, and the height of the upper side wall of the inner tub by the adjustment means,
A substrate processing apparatus comprising:
請求項1に記載の基板処理装置において、
前記内槽は、前記噴射手段の下流側にあたる上部側壁が、鉛直姿勢と、外槽側への傾斜姿勢とにわたり揺動自在の可動壁を備え、
前記調整手段は、前記可動壁の姿勢を調整することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1,
The inner tank includes a movable wall whose upper side wall on the downstream side of the injection means can swing between a vertical posture and an inclined posture toward the outer tank side,
The substrate processing apparatus, wherein the adjusting means adjusts a posture of the movable wall.
請求項1または2に記載の基板処理装置において、
前記外槽の上縁は、前記内槽の上縁とほぼ同じ高さであることを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1 or 2,
The substrate processing apparatus according to claim 1, wherein an upper edge of the outer tank is substantially the same height as an upper edge of the inner tank.
請求項1から3のいずれかに記載の基板処理装置において、
前記噴射手段の下流側にあたる前記外槽の幅は、基板径が300mm、純水流量が0〜30リットル/分、乾燥気体の流量が6〜10m3/分の場合、30〜70mmであることを特徴とする基板処理装置。
In the substrate processing apparatus according to claim 1,
The width of the outer tub on the downstream side of the jetting means is 30 to 70 mm when the substrate diameter is 300 mm, the pure water flow rate is 0 to 30 liters / minute, and the dry gas flow rate is 6 to 10 m 3 / minute. A substrate processing apparatus.
基板を処理液で処理する基板処理装置において、
処理液を貯留する内槽と、
前記内槽の上部にて、水平方向に乾燥気体を噴射する噴射手段と、
前記噴射手段の下流側の幅を上流側よりも広く形成され、かつ、前記内槽の上縁よりも高い上縁を有し、前記内槽から溢れる処理液を回収する外槽と、
前記外槽からの排液流量を調整する流量調整手段と、
基板を支持し、前記内槽の内部にあたる処理位置とその上方にあたる待機位置とにわたって昇降する支持手段と、
前記支持手段によって基板を上昇させる際に、前記流量調整手段により排液流量を少なくするとともに、前記噴射手段から乾燥気体を噴射させる制御手段と、
を備えていることを特徴とする基板処理装置。
In a substrate processing apparatus for processing a substrate with a processing liquid,
An inner tank for storing the processing liquid;
Injecting means for injecting dry gas horizontally in the upper part of the inner tank,
An outer tub that is formed wider than the upstream side of the downstream side of the injection means, and has an upper edge that is higher than the upper edge of the inner tub, and collects the processing liquid overflowing from the inner tub;
A flow rate adjusting means for adjusting a drainage flow rate from the outer tank;
A supporting means for supporting the substrate and moving up and down over a processing position corresponding to the inside of the inner tank and a standby position corresponding to the processing position;
When raising the substrate by the support means, the control means for reducing the drain flow rate by the flow rate adjustment means and injecting dry gas from the injection means,
A substrate processing apparatus comprising:
請求項5に記載の基板処理装置において、
前記外槽の上縁は、前記内槽の上縁より1〜3mm高くされていることを特徴とする基板処理装置。
The substrate processing apparatus according to claim 5,
The upper edge of the outer tank is 1 to 3 mm higher than the upper edge of the inner tank.
請求項5または6に記載の基板処理装置において、
前記噴射手段の下流側にあたる前記外槽の幅は、基板径が200mm、純水流量が0〜30リットル/分、乾燥気体の流量が6〜10m3/分の場合、30〜70mmであることを特徴とする基板処理装置。
The substrate processing apparatus according to claim 5 or 6,
The width of the outer tub on the downstream side of the jetting means is 30 to 70 mm when the substrate diameter is 200 mm, the pure water flow rate is 0 to 30 liters / minute, and the dry gas flow rate is 6 to 10 m 3 / minute. A substrate processing apparatus.
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JP2000164548A (en) * 1998-11-26 2000-06-16 Mitsubishi Electric Corp Device and method for cleaning

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