JP2007258776A - High-frequency module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress destruction in airtightness between a surface acoustic wave element that is subjected to flip-chip packaging on a wiring board and coated with a sealing resin, and the wiring board in secondary packaging. <P>SOLUTION: In a high-frequency module, the surface acoustic wave element 2, where an annular sealing electrode 24 is provided along the outer periphery on one main surface of a piezoelectric substrate 21, and an IDT electrode 22 and an I/O electrode 23 connected to the IDT electrode 22 are provided at the inner region of the annular sealing electrode 24, is subjected to flip-chip packaging to the surface of the wiring board 1 having a laminated structure comprising a plurality of dielectric layers 11 and a plurality of conductive layers 12. The other surface mount components are packaged on the surface of the wiring board 1, and the surface of the wiring board 1 is covered with a sealing resin layer 4 so that the surface acoustic wave element 2 and the other surface mount components are sealed. In the high-frequency module, an annular gap 41 is formed on the sealing resin layer 4 along the surface acoustic wave element 2 so that the sealing resin layer 4 is divided when viewed from the lamination direction in the wiring board 1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a high-frequency module that is mainly mounted on a wireless communication terminal such as a mobile phone and has a surface acoustic wave element mounted thereon.

  The mobile phone and wireless LAN markets are expected to grow rapidly, and the number of third-generation mobile phones produced is increasing rapidly. As mobile phones progress to the third generation, built-in cameras, TV reception, and other wireless communications (Bluetooth, wireless LAN, WiMAX) are also being used together, and the area occupied by high-frequency circuits is decreasing year by year. . For this reason, mobile phone parts are dramatically reduced in size and weight, and it is necessary to meet the demands for reducing the number of parts and reducing power consumption while improving individual performance. In order to realize such a demand, integration of chipsets and performance improvement are progressing, and similarly, a high frequency module in which peripheral high frequency components are also integrated has been proposed.

  Among high-frequency components mounted on high-frequency modules, surface acoustic wave (SAW) elements, in which excitation electrodes and input / output electrodes are formed on one main surface of a piezoelectric substrate, have foreign substances such as moisture and dust attached to the excitation electrodes. It is necessary to hermetically seal in a hollow state so as not to interfere with the propagation of surface acoustic waves.

  Therefore, as shown in FIG. 9, a high-frequency module in which the surface of the piezoelectric substrate 81 on which the excitation electrode 82 and the input / output electrode 83 are formed faces downward and the surface acoustic wave element 8 is flip-chip mounted on the wiring substrate 91 is provided. It has been proposed (see, for example, Patent Document 1). According to this structure, the annular sealing electrode 84 is disposed around the excitation electrode 82 and the input / output electrode 83, and the input / output electrode 83 and the annular sealing electrode 84 are joined to the wiring layer 93 on the surface of the wiring substrate 91 by the solder 92. Thus, the excitation electrode 82 junction and the input / output electrode 83 junction are sealed in an airtight space surrounded by the surface of the wiring substrate 91 and the piezoelectric substrate 81 and the annular sealing electrode 84 junction of the surface acoustic wave element 8. Has been. The annular sealing electrode 84 can function as a ground electrode.

In order to protect the flip-chip mounted surface acoustic wave element 8 and other mounted high-frequency components (such as the semiconductor chip 94), the surface of the wiring board 91 is sealed with a sealing resin so as to seal these mounted components. 95. Note that the sealing resin 95 has a flat upper surface so that it can be sucked and conveyed from the upper side for convenience in manufacturing.
JP 2005-123909 A

  However, as shown in FIG. 9, a high-frequency module in which surface-mounted components (not shown) such as a semiconductor chip 94 and a chip capacitor are mounted on a single wiring board 91 together with the surface acoustic wave element 8 is lead-free soldered to the motherboard. When the secondary mounting is performed, etc., the solder 92 of the input / output electrode 83 joint and the annular sealing electrode 84 joint joining the surface acoustic wave element 8 and the surface of the wiring substrate 91 are remelted. As a result of the movement of 92 to the hermetic space side, there were problems such as hermetic destruction of the hermetic space and short circuit between the input / output electrode 83 and the annular sealing electrode 84 by the solder 92.

  This is because the solder 92 used for flip chip mounting of the surface acoustic wave element 8 cannot select a lead-free material having a higher melting point and better connection reliability than the solder used for secondary mounting. When thrown into the reflow furnace for secondary mounting, the solder 92 used for the input / output electrode 83 connecting portion and the annular sealing electrode 84 connecting portion undergoes remelting and changes from a solid phase to a liquid phase. At this time, moisture or unreacted product absorbed by the sealing resin 95 is vaporized and degassed, thereby causing a pressure difference between the inside and outside (the airtight space and the outside) of the connection portion of the annular sealing electrode 84. Therefore, the melted solder 92 flows toward the airtight space, resulting in a short circuit and disconnection.

  As a countermeasure, a method of covering the wiring board with a metal case without resin sealing is conceivable. However, when covering a wiring board with a metal case, for example, it is connected to the side surface of the wiring board via solder, but in order to avoid a short circuit with the high frequency wiring, the minimum necessary amount between the metal case and the high frequency wiring is required. It is necessary to provide an interval. Therefore, it is not a desirable measure for a high-frequency module aimed at miniaturization. On the other hand, even if the wiring board is covered with the resin case, there remains a problem in terms of cost.

  The present invention has been made in view of the above circumstances, and suppresses hermetic breakage between a surface acoustic wave element flip-chip mounted on a wiring board and covered with a sealing resin and the wiring board during secondary mounting. An object is to provide a high-frequency module.

  As a result of diligent study, the present inventor releases moisture from the sealing resin in the vicinity of the annular sealing electrode (annular sealing electrode) of the surface acoustic wave element before the solder is remelted by heating during secondary mounting. By adopting such a structure, the inventors have found that the above object can be achieved, and have reached the present invention.

  That is, in the high frequency module of the present invention, an annular sealing electrode is provided along the outer periphery on one main surface of the piezoelectric substrate, and an IDT electrode and an input / output electrode connected to the IDT electrode are provided in an inner region of the annular sealing electrode; The surface acoustic wave device provided with is flip-chip mounted on the surface of a wiring board having a laminated structure composed of a plurality of dielectric layers and a plurality of conductor layers, and other surface mounting components are mounted on the surface of the wiring board. In the high-frequency module which is mounted and the surface of the wiring board is covered with a sealing resin layer formed flat on the upper surface so as to seal the surface acoustic wave element and the other surface mounting components, the sealing resin layer Is characterized in that a groove-like gap is formed along the surface acoustic wave element so as to divide the sealing resin layer when viewed from the stacking direction of the wiring board. That.

  The high-frequency module according to the present invention further includes an annular sealing electrode provided along the outer periphery on one main surface of the piezoelectric substrate, and an IDT electrode and an input / output electrode connected to the IDT electrode in an inner region of the annular sealing electrode; The surface acoustic wave device provided with is flip-chip mounted on the surface of a wiring board having a laminated structure composed of a plurality of dielectric layers and a plurality of conductor layers, and other surface mounting components are mounted on the surface of the wiring board. In the high-frequency module which is mounted and the surface of the wiring board is covered with a sealing resin layer formed flat on the upper surface so as to seal the surface acoustic wave element and the other surface mounting components, the sealing resin layer Are formed so that a plurality of hole-like voids in the wiring board are arranged along the surface acoustic wave element at intervals less than the distance from the surface acoustic wave element. And it is characterized in and.

  According to the present invention, from the sealing resin existing in the vicinity of the annular sealing electrode joint that had an adverse effect on the annular sealing electrode joint during the secondary mounting reflow, the moisture contained therein and unreacted Since the gas component is discharged to the outside through the groove-like gap or hole-like gap until the solder is remelted, the solder does not flow into the airtight space, and the surface acoustic wave element The airtightness between the wiring board and the wiring board can be improved, that is, the airtight destruction can be prevented.

  An embodiment of a high-frequency module according to the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic plan view showing an embodiment of the high-frequency module of the present invention, and FIG. 2 is a schematic explanatory view of the high-frequency module when viewed in the direction of the arrow shown in FIG.

  As shown in FIGS. 1 and 2, the wiring substrate 1 constituting the high-frequency module of the present invention has a laminated structure including a plurality of dielectric layers 11 and a plurality of planar conductor layers 12. The dielectric layer 11 has a thickness of about 5 to 200 μm, and the planar conductor layer 12 has a thickness of about 2 to 20 μm. In order to connect the planar conductor layers 12 and the like formed in different layers, via-hole conductors 13 having a diameter of 30 to 200 μm that penetrate each dielectric layer 11 are formed. A surface acoustic wave element 2 is so-called flip-chip mounted on the surface of the wiring substrate 1, and an electrode pad group (input / output electrode pads for flip-chip mounting the surface acoustic wave element 2 is mounted on the mounting portion. 14 and an annular sealing electrode pad 15) are formed.

  Examples of the dielectric material constituting the wiring board 1 include ceramics and the like, and are not particularly limited. However, by comprising a glass ceramic sintered body obtained by firing glass powder or a mixture of glass powder and ceramic filler powder, electrodes, planar conductor layers, via-hole conductors, etc. are made of Cu, Ag, Au, Ni, Pt, Pd or a mixture thereof can be used.

The glass component used here contains at least SiO ₂ and contains at least one of Al ₂ O ₃ , B ₂ O ₃ , ZnO, PbO, alkaline earth metal oxide, and alkali metal oxide. For example, SiO ₂ —B ₂ O ₃ system, SiO ₂ —B ₂ O ₃ —Al ₂ O ₃ system—MO system (where M represents Ca, Sr, Mg, Ba or Zn), etc. Examples thereof include borosilicate glass, alkali silicate glass, Ba glass, Pb glass, and Bi glass. These glasses are desirably crystallized glasses in which crystals are precipitated by firing in order to increase the substrate strength.

As the ceramic filler, SiO ₂ such as quartz and cristobalite, Al ₂ O ₃ , ZrO ₂ , mullite, forsterite, enstatite, spinel, magnesia and the like are preferably used. The ratio of the glass component and the filler component is preferably 10 to 70% by weight of the glass component and 30 to 90% by weight of the ceramic filler component for increasing the substrate strength.

  A surface acoustic wave element 2 flip-chip mounted on the surface of the wiring substrate 1 is a piezoelectric substrate 21 made of a piezoelectric single crystal such as lithium tantalate, lanthanum-gallium-niobium single crystal, lithium tetraborate single crystal, or the like. As shown in FIG. 3, an interdigital transducer electrode (in the present invention, including a comb-like electrode and a reflector electrode, hereinafter referred to as an IDT electrode) 22 is formed on one main surface of the electrode. In addition, an input / output electrode 23 connected to the IDT electrode 22 is formed, and an annular sealing electrode 24 is formed along the outer periphery on one main surface of the piezoelectric substrate 21. Here, the IDT electrode 22 is disposed in a substantially central region of the piezoelectric substrate 21, and the input / output electrode 23 is disposed at a position extending from the predetermined IDT electrode 22.

  As will be described later, the annular sealing electrode 24 is a space in contact with the IDT electrode 22 when the surface acoustic wave element 2 is mounted on the wiring substrate 1, and between the piezoelectric substrate 21 and the surface of the wiring substrate 1. The space formed by the gap is hermetically sealed. In this example, the annular sealing electrode 24 functions as a ground electrode. The electrode on the piezoelectric substrate 21 is formed of aluminum, copper or the like by, for example, photolithography technique, and a plating layer of chromium, nickel, gold or the like is formed on the surface thereof.

  On the other hand, as shown in FIG. 4, an input / output electrode pad 14 corresponding to the input / output electrode 23 is provided in a region where the surface acoustic wave element 2 on the surface of the wiring substrate 1 is mounted so as to surround these. An annular sealing electrode pad 15 is formed on the substrate.

  The input / output electrodes 23 and the input / output electrode pads 14 are formed so as to form a predetermined gap between the surface of the wiring substrate 1 and one main surface of the piezoelectric substrate 21 (the surface on which the IDT electrode 22 is formed). In addition to solder bonding, the annular sealing electrode 24 and the annular sealing electrode pad 15 are solder-bonded, and the surface acoustic wave element 2 is flip-chip mounted on the wiring substrate 1. With this configuration, the region surrounded by the annular sealing electrode 24 when viewed from the stacking direction forms an airtight space, and the IDT electrode 22 that is an excitation electrode is hermetically sealed in the airtight space.

  In addition, surface mount components such as a semiconductor chip (power amplifier IC) 31, a chip capacitor 32, and a chip inductor 33 are mounted on the surface of the wiring board 1. After all the mounted components are mounted, these mounted components are mounted. In order to protect the surface mounting component, the surface mount component is sealed with a sealing resin layer 4 made of an epoxy resin, a silicone resin, or a photo-curing resin described later. The sealing resin layer 4 has an upper surface (surface) with a layer thickness that matches the highest surface mounting component so as to seal all surface mounting components such as the surface acoustic wave element 2 and the bonding wires of the semiconductor chip 31. The surface of the wiring board 1 is coated so as to be flat.

  In the sealing resin layer 4, it is important that a groove-like void 41 is formed along the surface acoustic wave element 2 so as to be divided when viewed from the stacking direction of the wiring substrate 1. The formation of the groove-like gap 41 along the surface acoustic wave element 2 means that moisture from the sealing resin layer 4 in the vicinity of the joint portion of the annular sealing electrode 24 of the surface acoustic wave element 2 by heating during secondary mounting. Is formed at such a position as to be released to the outside. As a result, the water in the sealing resin layer 4 in the vicinity of the annular sealing electrode joint that adversely affects the solder of the annular sealing electrode joint during secondary mounting has a boiling point of water lower than the melting point of the solder. Therefore, it is possible to prevent the solder 5 from entering the airtight space and causing an airtight breakage or the like because the solder is discharged from the groove-like gap portion 41 immediately before remelting.

  Here, to be divided means that the sealing resin layer 4 is partitioned into the surface acoustic wave element 2 side and the other surface-mounted component (which may be another surface acoustic wave element 2) side. ing. Further, along the surface acoustic wave element 2, in principle, it is formed around the wiring substrate 1 as viewed from the stacking direction. However, as shown in FIG. In the situation where moisture is released from the side surface of the sealing resin layer 4 disposed at a position close to the edge), other than the side surface of the sealing resin layer 4 (side surface of the wiring substrate 1 as viewed from the stacking direction) It is meant to be formed in a part.

  The groove-like gap 41 is preferably formed from the top surface of the sealing resin layer 4 to the bottom surface (near the surface of the wiring substrate 1) from the viewpoint of moisture release. In addition, the width is, for example, about 0.05 mm or more and 0.2 mm or less in the laser processing described later. However, the width is not particularly limited as long as it does not hinder the relationship with the arrangement of other mounting parts and suction conveyance. Absent. Further, the position where the groove-like gap 41 is formed needs to be a region where the effect of moisture release is exerted on the surface acoustic wave element, and preferably the outer periphery of the surface acoustic wave element 2 as viewed from the stacking direction. To 0.05 mm to 0.3 mm in the range of the distance.

  In the formation of the groove-shaped gap 41, a method of performing laser processing on the sealing resin layer 4 after curing the sealing resin layer 4 can be mentioned. Here, especially when there is a wiring conductor on the surface of the wiring board 1, it is necessary not to cut the wiring conductor, so that a groove-like gap 41 having a depth to the vicinity of the surface of the wiring board 1 is formed. The output of the laser device is adjusted to do so.

  Also, methods other than laser processing can be employed. Examples of other processing methods include a transfer mold method. Specifically, as shown in FIG. 5, after mounting the surface acoustic wave element 2 and other mounting components, fixing the semiconductor chip 31 and completing the wire bonding, the gold is shaped so as to form a groove-like gap 41. After setting the mold 61 on the surface of the wiring substrate 1 and injecting a sealing resin (thermosetting resin) from an injection port 611 provided in a part of the mold 61, and completely filling the sealing resin, Seal the inlet 611 while applying pressure. While being decompressed as it is, it is heated to 150 ° C. to cure the sealing resin. Thereafter, by removing the mold 611, the groove-shaped gap 41 can be formed in the same manner as laser processing.

  As another method, a method using a photo-curing resin 42 instead of a thermosetting resin as a sealing resin can be employed. Specifically, as shown in FIG. 6, after the surface acoustic wave element 2 and other mounting components are mounted, the semiconductor chip 31 is fixed and the wire bonding is completed, a photo-curing resin 42 is applied on the surface of the wiring substrate 1. . Then, after setting the mask pattern 62 which does not irradiate the area | region which forms a space | gap so that it may not contact the upper surface of the photocurable resin 42, it irradiated from the upper direction on the conditions which photocurable resin hardens | cures. Thereafter, the void portion can be formed by immersing the high-frequency module in a developer, performing a spraying process, and removing the uncured portion 421.

  In addition, after forming the groove-shaped space | gap part 41, a seal | sticker may be affixed on the upper surface of the sealing resin layer 4 in consideration of the case where suction conveyance is hindered or an external appearance. The seal is a metal mixed and may have a shielding function.

  So far, the embodiment of the present invention in which the groove-like void portion 41 is formed has been described, but an invention in which a plurality of hole-like void portions 43 are formed instead can be preferably employed.

  Specifically, as shown in FIG. 7, a plurality of hole voids 43 are formed in the sealing resin layer 4 along the surface acoustic wave element 2 as viewed from the stacking direction in the wiring substrate 1. Are formed so as to form rows at intervals less than the interval. In FIG. 7, seven hole voids 43 are formed in a row along the long side of the surface acoustic wave element 2, and five hole voids 43 are formed along the short side of the surface acoustic wave element 2. It is formed in a row.

  The distance (interval) between the surface acoustic wave element 2 and the hole-like gap portion 43 is 0.05 mm to 0 mm from the outer periphery of the surface acoustic wave element 2 when viewed from the stacking direction, similarly to the position where the groove-like gap portion 41 is formed. It is set within an area having a distance of about 3 mm. And the space | interval of the adjacent hole part 43 and the hole part 43 in the several hole part 43 is from the sealing resin layer 4 to such an extent that it does not have a bad influence on the airtight sealing of the surface acoustic wave element 2. It is set to be less than the distance (interval) between the surface acoustic wave element 2 and the hole-like gap 43 within a range in which moisture can be released. When the hole-shaped void 43 has a circular cross section, the diameter thereof is, for example, about 0.05 mm or more and 0.2 mm or less when formed by laser processing, and the depth is the same as that of the groove-shaped void 41 and the sealing resin layer. 4 is preferably formed from the top surface to the bottom surface (near the surface of the wiring board 1).

  The hole void 43 is not limited to a circular cross section, and may be a polygonal cross section. For example, in the case of a square cross section, the short axis direction in the cross section (the line segment connecting the surface acoustic wave element and the hole void). The distance (width) of the (direction) is formed to be the same width as the groove-like gap 41, and the major axis direction (direction along the surface acoustic wave element) is appropriately determined.

  Further, in the same manner as the manufacture of the groove-like void portion 41, the hole-like void portion 43 is manufactured in addition to the laser processing, the transfer mold using the mold, and the sealing resin layer 4 using the photo-curing resin. The method of forming can be adopted.

  In the embodiment shown in FIG. 7, a hole-like void 43 is provided at a position along all the surface acoustic wave elements as means for releasing moisture from the sealing resin layer 4. The groove-like void portion 41 shown in FIG. 7 and the hole-like void portion 43 shown in FIG. 7 may be combined.

  Generally, a high frequency module has a circuit configuration as shown in a region surrounded by a one-dot chain line in FIG. Unnecessary components are removed from the transmission signal input from the transmission signal input terminal 71 by the band pass filter 72, and the signal is amplified by the power amplifier 73. The amplified transmission signal is sent to the antenna connection terminal 75 through the duplexer 74. And it radiates | emits from the antenna to the air.

  On the other hand, the reception signal received by the antenna and input from the antenna connection terminal 75 is output from the reception signal output terminal 76 via the duplexer 74. The reception signal output from the reception signal output terminal 76 is input to the low noise amplifier via the input matching circuit, and then input to the reception circuit having a demodulation function. In the case of a mobile phone, the reception signal is output as sound. It has become.

  The surface acoustic wave element 2 described so far is used as a transmission filter that passes a transmission signal and a reception filter that passes a reception signal in the duplexer 74 in FIG. 8, and a band-pass filter 72 in front of the power amplifier 73. Etc. are used. The semiconductor chip 31 is used as a component of the power amplifier 73 in FIG.

  Finally, the manufacturing method of the present invention and the results of effect confirmation will be described.

  An organic binder organic solvent or the like was added to and mixed with glass powder or a mixture of glass powder and ceramic filler powder to prepare a slurry, and then a ceramic green sheet having a predetermined thickness was prepared by a doctor blade method, a calender roll method, or the like. Thereafter, a through hole for forming a via hole conductor is formed in the ceramic green sheet by micro drilling, punching, laser processing, etc., and then Cu, Ag, Au, Ni, Pt, Pd, or a mixture thereof is formed in the through hole. The conductor paste was filled by a screen printing method or the like, and various conductor patterns serving as a planar conductor layer were printed. And after laminating and pressure-bonding the ceramic green sheet in which the via-hole conductor and the planar conductor layer were formed, the wiring board was produced by baking at the temperature of 850-1000 degreeC.

  Next, an electrode made of an Al—Cu (2 wt%) alloy is formed on a piezoelectric substrate (38.7 ° Y-cut of lithium tantalate single crystal, thermal expansion coefficient 14 to 16 ppm / ° C.), and then a resist is applied. , Patterning and peeling are repeated to form an IDT electrode, input / output electrode, annular sealing electrode (ground electrode) and protective film, to produce a surface acoustic wave device, and a wiring board having a thermal expansion coefficient of 8.5 ppm / ° C. It was mounted on (ceramic multilayer substrate). In mounting, high-temperature solder was applied to the annular sealing electrode and the input / output electrode by screen printing, and mounting was performed by reflow. According to the mounting structure of the surface acoustic wave element, airtightness is ensured by surrounding the IDT electrode with the annular sealing electrode (ground electrode). In addition, a chip component such as a capacitor chip was mounted at the same time as the surface acoustic wave element, and the solder was fixed by reflow. Furthermore, after bonding the semiconductor chip with silver paste, conduction was made by wire bonding with a gold wire.

  Further, a thermosetting resin in which fused silica was added as a filler to the epoxy resin was applied on the surface of the multilayer substrate. And it heated at 150 degreeC within the vacuum dryer which reduced pressure, and hardened the sealing resin. The thermosetting resin used at this time is an epoxy resin with a saturated water absorption of 0.2% by weight, and when it is dried from a saturated water absorption state at 200 ° C. for 3 hours by a preliminary test, before water absorption. It has been confirmed that the weight returns to.

  Furthermore, in the sealing resin layer, groove-like voids were formed along the surface acoustic wave element so as to divide the sealing resin layer when viewed from the lamination direction on the wiring board. Specifically, a slit having a width of about 0.1 mm and a depth to the vicinity of the wiring board surface is formed by laser processing at a position of about 0.08 mm from the outer periphery of the surface acoustic wave element along the surface acoustic wave element. The high frequency module of the present invention was obtained.

  A comparison was made between the high-frequency module of the present invention produced by the above procedure and a conventional high-frequency module in which no slit was formed. As test conditions, after moisture absorption treatment for 40 hours in an atmosphere of temperature 60 ° C. and humidity 60%, reflow heating (peak temperature 260 ° C.) was repeated three times, and the defect rate was compared. While the defect rate was about 40%, it was confirmed that the defect rate was improved to 0% in the high-frequency module sample having the slit of the structure of the present invention.

It is a schematic plan view which shows one Embodiment of the high frequency module of this invention. It is a schematic explanatory drawing of the high frequency module when it sees in the arrow direction shown in FIG. FIG. 3 is an explanatory view of one main surface of a piezoelectric substrate 21 of the surface acoustic wave element 2 shown in FIG. 2. It is explanatory drawing of the area | region where the surface acoustic wave element 2 of the wiring board 1 surface shown in FIG. 2 is mounted. It is explanatory drawing of one manufacturing method of the high frequency module of this invention. It is explanatory drawing of the other manufacturing method of the high frequency module of this invention. It is a schematic plan view which shows other embodiment of the high frequency module of this invention. It is a block diagram which shows the circuit structural example of the high frequency module of this invention. It is a schematic sectional drawing of the conventional high frequency module.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Wiring board 11 ... Dielectric layer 12 Plane conductor layer 13 Via hole conductor 14 Input / output electrode pad 15 Ring-sealing electrode pad 2 Surface acoustic wave element 21 -Piezoelectric substrate 22-IDT electrode 23-Input / output electrode 24-Ring sealing electrode 31-Semiconductor chip 32-Chip capacitor 33-Chip inductor 4-Sealing resin 41-Groove-shaped gap 42 .. Photo-curing resin 421. Uncured portion 43.. Hole gap 5... Solder 61... Die 611 / Injection port 62.. Mask pattern 71. 73 .. Power amplifier 74 .. Duplexer 75 .. Antenna connection terminal 76 .. Received signal output terminal

Claims (2)

A surface acoustic wave device in which an annular sealing electrode is provided along the outer periphery on one main surface of a piezoelectric substrate, and an IDT electrode and an input / output electrode connected to the IDT electrode are provided in an inner region of the annular sealing electrode Is mounted on the surface of the wiring board having a laminated structure composed of a plurality of dielectric layers and a plurality of conductor layers, and other surface mount components are mounted on the surface of the wiring board, and the surface acoustic wave element. In the high-frequency module in which the surface of the wiring board is covered with a sealing resin layer formed flat on the upper surface so as to seal the other surface-mounted components, the sealing resin layer is laminated on the wiring board. A high-frequency module, characterized in that a groove-like void is formed along the surface acoustic wave element so as to divide the sealing resin layer when viewed from the direction. A surface acoustic wave device in which an annular sealing electrode is provided along the outer periphery on one main surface of a piezoelectric substrate, and an IDT electrode and an input / output electrode connected to the IDT electrode are provided in an inner region of the annular sealing electrode Is mounted on the surface of the wiring board having a laminated structure composed of a plurality of dielectric layers and a plurality of conductor layers, and other surface mount components are mounted on the surface of the wiring board, and the surface acoustic wave element. In the high-frequency module in which the surface of the wiring board is covered with a sealing resin layer formed flat on the upper surface so as to seal the other surface-mounted components, the sealing resin layer is laminated on the wiring board. A high-frequency module characterized in that a plurality of hole-shaped voids are formed in a row along the surface acoustic wave element at intervals less than the distance from the surface acoustic wave element when viewed from the direction.

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