JP2007258415A - Semiconductor light emitting element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a high connection reliability. <P>SOLUTION: The semiconductor light emitting element 1 has such a structure that an n-electrode 3 is formed on the bottom face side of a substrate 2 formed of conductive n-type GaN; an n-layer 4, a light emission layer 5, and a p-layer 6 are formed in order on the top face side of the substrate 2; and a p-electrode 7 is formed on the p-layer 6. The n-electrode 3 is formed in a rectangular concave portion 2a formed in the substrate 2. The depth of the concave portion 2a formed in the substrate 2 is larger than the height of the n-electrode 3. Therefore, when die-bonded on a mounting face 10, the semiconductor light emitting element 1 is never inclined overall since the peripheral face of the concave portion 2a of the substrate 2 can be brought into contact with the mounting face 10 by face to face. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device in which an n electrode is provided on one surface side of a conductive substrate and a semiconductor layer is laminated on the other surface side, and a p electrode is provided, and a method for manufacturing the same.

  For example, as a semiconductor light emitting device in which an n electrode is provided on one side of a conductive substrate such as an n-type GaN substrate, a semiconductor layer is stacked on the other side, and a p electrode is provided on the stacked semiconductor layer, Patent Documents 1 is described.

When the semiconductor light emitting device described in Patent Document 1 emits light, the n electrode is electrically connected by die bonding with a conductive adhesive such as silver paste interposed between the wiring pattern and the lead frame, and the p electrode is electrically connected by wire bonding. It connects and connects, and it makes it light-emit by applying a voltage.
JP-A-11-340571

  However, when the n-electrode is made conductive by die-bonding the semiconductor light-emitting device, the protrusion of the n-electrode provided on the conductive substrate serves as a fulcrum, and the entire semiconductor light-emitting device is tilted and is not supported like a seesaw. There is a risk that the lead frame or the wiring pattern is connected and fixed in a stable contact state. Therefore, since the connection is made in a state where the adhesion between the n electrode and the lead frame or the wiring pattern is lowered, there is a possibility that the n electrode peels off from the silver paste with a slight impact. In such a case, there is a possibility that the light is not emitted or the operating voltage rises to cause an operation failure or a characteristic failure.

  Further, when the p electrode is connected to a wiring pattern or a lead frame with the n electrode facing upward, the n electrode is cured when picking up the element by adsorbing the surface on which the n electrode is formed with a jig such as a collet. There is a risk of scratching the surface of the n electrode in contact with the tool. If the n electrode is scratched, the reliability is affected.

  Therefore, an object of the present invention is to provide a semiconductor light emitting device having high connection reliability and a high appearance yield, and a method for manufacturing the same.

  The semiconductor light-emitting device of the present invention is a semiconductor light-emitting device in which an n-electrode is provided on one surface side of a conductive substrate and a semiconductor layer is stacked on the other surface side of the conductive substrate. Is provided in a recess provided in the conductive substrate.

  In the semiconductor light emitting device of the present invention, since the n-electrode is formed in the concave portion of the conductive substrate, the die-bonding can be performed in a stable state when the n-electrode forming surface is in contact with the n-electrode formation surface. The semiconductor light emitting device can be made high.

  Further, even when the p electrode is disposed on the lead frame or the wiring pattern with the n electrode facing upward, the n electrode surface can be made lower than the adsorption surface if the n electrode is formed in the concave portion of the conductive substrate. Therefore, even if it adsorb | sucks with jigs, such as a collet, it can prevent that an n electrode is damaged. Therefore, high reliability can be maintained.

  A first invention of the present application is a semiconductor light emitting device in which an n electrode is provided on one surface side of a conductive substrate and a semiconductor layer is stacked on the other surface side, and a p electrode is provided. It is provided in the recessed part provided in the conductive substrate.

  The n-electrode provided on the conductive substrate is provided in the concave portion of the conductive substrate, so that the n-electrode of the n-electrode is provided in comparison with the semiconductor light emitting device in which the n-electrode is provided in the state where the concave portion is not formed in the conductive substrate. The bulge can be reduced. Therefore, when the n-electrode provided on the conductive substrate is connected to the lead frame or the wiring pattern by die bonding, the n-electrode serves as a fulcrum of the seesaw so that the entire semiconductor light-emitting element is not greatly inclined. Therefore, die bonding can be performed in a stable state. Further, when the p-electrode is connected to a lead frame or the like, the n-electrode is not scratched by a jig or the like, and the appearance can be kept clean.

  The second invention of the present application is characterized in that the recess provided in the conductive substrate is formed deeper than the height of the n-electrode.

  If the depth of the recess provided in the conductive substrate is deeper than the height of the n electrode, the n electrode does not protrude from the opening of the recess, so that the n provided in the conductive substrate by die bonding When the electrode is connected to the lead frame or the wiring pattern, the n electrode does not become a fulcrum of the seesaw. Therefore, since it is possible to prevent the entire semiconductor light emitting element from being inclined in any direction, die bonding can be performed in a more stable state. Moreover, since the lead frame and the wiring pattern are brought into contact with the peripheral surface of the recess provided in the substrate, an improvement in the heat transfer effect can be expected. Further, since the jig does not directly touch the n electrode, the electrode surface is not scratched.

  The third invention of the present application is characterized in that a stepped portion is provided on the inner wall surface of the recess.

  When the incident angle of the light passing through the substrate and reaching the substrate surface is less than the critical angle, the light is totally reflected on the substrate surface and the light extraction efficiency to the outside is lowered. However, by providing a stepped portion on the inner wall surface of the concave portion of the substrate, the incident angle when the light from the inside of the substrate reaches the substrate surface increases so that the incident angle becomes greater than the critical angle. Decreasing the light extraction efficiency to the outside can be reduced. In addition, since the step portion is provided on the inner wall surface of the recess, the substrate surface height around the recess is not affected. Therefore, it is possible to improve the luminance while improving the connection reliability.

  The fourth invention of the present application is characterized in that the inner wall surface of the recess is formed in a curved surface shape whose opening area gradually increases toward the outside.

  When the incident angle of the light passing through the substrate and reaching the substrate surface is less than the critical angle, the light is totally reflected on the substrate surface and the light extraction efficiency to the outside is lowered. However, by forming the inner wall surface of the concave portion of the substrate into a curved surface shape whose opening area gradually increases toward the outside, the incident angle when the light from the inside of the substrate reaches the substrate surface is greater than the critical angle. Therefore, it is possible to reduce a decrease in light extraction efficiency due to total reflection on the substrate surface. In addition, since the inner wall surface of the recess is curved, it does not affect the height of the substrate surface around the recess. Therefore, it is possible to improve the luminance while improving the connection reliability.

  In the fifth invention of the present application, the conductive substrate is formed of an n-type GaN substrate, and the contact electrode on the conductive substrate side of the n electrode is any one of Al, Ti, In, Cr, Zr, W, and Sn. It is characterized by being formed of one or an alloy containing one or more of these metals, or a conductive film.

  When the conductive substrate is an n-type GaN substrate, the contact electrode on the conductive substrate side of the n electrode is any one of Al, Ti, In, Cr, Zr, W, and Sn, or these metals. If it is formed of an alloy including one or more kinds or a conductive film, contact with the substrate can be improved.

  In a sixth invention of the present application, the n electrode includes a contact electrode, an intermediate electrode, and a bonding electrode. When the contact electrode is Al and the bonding electrode is Au, the intermediate electrode is Cr, Pt, Ti, It is characterized by being formed of any one of W, Mo, Pd, Ni, Nb, Rh, an alloy containing one or more of these metals, or a conductive film.

  When the contact electrode is made of Al, if it is attempted to provide the bonding electrode with Au, the contact electrode, Al, may be melted and mixed with Au of the bonding electrode. Accordingly, any one of Cr, Pt, Ti, W, Mo, Pd, Ni, Nb, and Rh as a barrier metal, or an alloy or conductive film containing one or more of these metals is used for bonding with the contact electrode. By adopting it as an intermediate electrode between the electrode layers, the bonding electrode can be laminated without being mixed with Al of the contact electrode.

  The seventh invention of the present application is characterized in that, if the n-electrode is formed in a substantially circular shape, one or more electrodes having a diameter of 65 μm or more, or an area corresponding thereto are formed. .

  If the n electrode is formed in a substantially circular shape, the n electrode can obtain an ohmic contact with the semiconductor layer by setting the diameter to 65 μm or more. The n-electrode may have a substantially rectangular shape or a different shape as long as it has the same area as that of the substantially circular shape having a diameter of 65 μm or more.

  According to an eighth aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting device, wherein an n electrode is provided on one surface side of a conductive substrate and a semiconductor layer is stacked on the other surface side, and a p electrode is provided. After laminating the semiconductor layer on the substrate, a protective film is formed on the conductive substrate, the protective film is selectively subjected to RIE treatment, a recess is formed in the conductive substrate, the protective film is removed, and an n electrode is formed in the recess It is characterized by forming.

  By forming the concave portion by the RIE process, the peripheral wall surface and the inner bottom surface of the concave portion can be formed in the concave and convex portions, so that the light extraction efficiency can be further improved.

  The ninth invention of the present application is characterized in that the deposition temperature of the protective film is 250 ° C. or lower.

  If a protective film is formed when the recess is formed at a high temperature (about 450 ° C.) such as thermal CVD, it causes a rise in Vf (forward voltage). Therefore, by setting the upper limit of the deposition temperature of the protective film to 250 ° C. or less in the temperature range in which the protective film can be deposited, a semiconductor light emitting element with suppressed Vf can be obtained.

  The tenth invention of the present application is characterized in that a resist film is formed on the semiconductor layer side before the protective film is selectively subjected to RIE treatment.

  When the etching is performed by RIE, a resist film is formed on the semiconductor layer side, so that the influence of the etching on the semiconductor layer can be prevented. In particular, when a protective film is provided in order to prevent impurities from adhering to the semiconductor layer, the protective film provided in the semiconductor layer is etched when the protective film provided in the conductive substrate is selectively etched. Therefore, by providing the resist film, the protective film provided on the semiconductor layer side can be protected from the etchant, and high reliability can be maintained.

(Embodiment 1)
A semiconductor light emitting device according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view of a semiconductor light emitting element according to Embodiment 1 of the present invention. FIG. 2 is a bottom view of the semiconductor light emitting element according to the first embodiment of the present invention. FIGS. 3A to 3C are graphs showing the relationship between current and voltage depending on the size of the n electrode.

  The semiconductor light emitting device 1 according to the first embodiment of the present invention is mounted face up, and has a conductive substrate 2 and an n electrode 3 provided on the bottom surface on one surface side of the substrate 2. It has. An n layer 4, a light emitting layer 5, and a p layer 6 are sequentially stacked on the upper surface which is the other surface side of the substrate 2. Further, a p-electrode 7 is laminated on the p-layer 6.

The substrate 2 is made of n-type GaN, and has a rectangular recess 2a on the bottom surface.
The recess 2a is formed deeper than the height of the n-electrode 3, thereby preventing the n-electrode 3 from protruding from the opening of the recess 2a. The recess 2a can be formed by forming a SiO ₂ mask at a low temperature (150 ° C. to 250 ° C.) and performing RIE (reactive ion etching) or the like, but can also be formed by wet etching. is there. When Pt is used for the contact electrode, Vf rises by 0.1 V or more when the SiO ₂ mask is formed at a high temperature (450 ° C.).

  The n-electrode 3 is formed in a substantially circular shape and has a three-layer structure, and includes an n-contact electrode 3a, an intermediate electrode 3b, and an n-bonding electrode 3c from the substrate 2 side. Here, the size of the n-electrode 3 will be described in detail with reference to FIG. As shown in FIGS. 3A and 3B, when the diameter of the substantially circular n electrode 3 is 86 μm or 80 μm, the n electrode 3 and the substrate 2 are in ohmic contact. You can see that However, as shown in FIG. 3C, an ohmic contact cannot be obtained when the diameter of the n-electrode 3 is 65 μm. Therefore, it is desirable that the diameter of the n-electrode 3 is 80 μm or more.

  Referring back to FIGS. 1 and 2, the n-contact electrode 3a has Al, Ti, Cr, Zr, W, and N as contact electrode materials in order to ensure good contact with the substrate 2 made of n-type GaN. It is formed of any one of Sn, an alloy containing one or more of these metals, or a conductive film.

  When the n-contact electrode 3a is made of Al, the intermediate electrode 3b is one of Cr, Pt, Ti, W, Mo, Pd, Ni, Nb, Rh, or an alloy containing one or more of these metals. It is desirable to use an electrode layer formed of a conductive film. This is because when the n contact electrode 3a is made of Al, an electrode layer formed of Au is formed as the n bonding electrode 3c without providing the intermediate electrode 3b. Attempts to do so may cause Al as the contact electrode to melt and mix with Au as the n-bonding electrode. Therefore, by adopting any one of Cr, Pt, Ti, W, Mo, Pd, Ni, Nb, Rh, an alloy containing one or more of these metals, or a conductive film as the intermediate electrode 3b, n When Au is laminated as the bonding electrode 3c, it can be laminated without being mixed with the n-contact electrode 3a.

  The n layer 4 is formed by laminating GaN, AlGaN or the like on the substrate 2. It is also possible to provide a buffer layer made of GaN, InGaN or the like between the n layer 4 and the substrate 2.

  The light emitting layer 5 is formed by laminating InGaN or the like on the n layer 4. The p layer 6 is formed by laminating AlGaN on the light emitting layer 5.

  The p-electrode 7 has a two-layer structure, and includes a p-contact electrode 7a and a p-bonding electrode 7b from the p-layer 6 side.

  The p contact electrode 7a is made of any one of In, Pt, Pd, Zn, or one of these metals as a contact electrode material in order to ensure good contact with the p layer 6 made of AlGaN. It is formed of an alloy or a conductive film including the above.

  A method of manufacturing the semiconductor light emitting element according to the first embodiment of the present invention configured as described above will be described with reference to FIGS. FIGS. 4A to 4D show a case where the n-electrode is formed on the substrate in the wafer state before the p-electrode is formed in the method for manufacturing the semiconductor light emitting device according to the first embodiment of the present invention. FIG. FIG. 5A to FIG. 5C are diagrams for explaining a method for manufacturing a semiconductor light-emitting element performed subsequently to FIG. 6A and 6B are views for explaining a method for manufacturing a semiconductor light-emitting element performed subsequently to FIG. 4 to 6, a case will be described in which a film is formed from an n-electrode on a substrate in a wafer state before a p-electrode is formed.

First, as shown in FIG. 4A, an n layer 101, a light emitting layer 102, and a p layer 103 are stacked on a substrate 100 in a wafer state. Then, as shown in FIG. 4B, a p-layer side protective film 104 made of SiO ₂ is formed on the entire surface on the p-layer 103 side. The p-layer side protective film 104 is formed with a film thickness of about 1 μm, and prevents impurities and the like from adhering to the p-layer 103. If an SiO ₂ film is present on the p layer, it can serve to prevent the adhesion of impurities. Therefore, when forming a mesa, the p layer side protective film may be used as a mask after pattern formation.

Next, as shown in FIG. 4C, a substrate-side protective film 105 made of SiO ₂ is formed on the entire surface on the substrate 100 side. The substrate-side protective film 105 is formed to a thickness of about 1.5 μm, and serves as a protective film when forming the recess 2a (see FIG. 1) using RIE.

  Next, as shown in FIG. 4D, a resist pattern 106 is formed on the substrate-side protective film 105 using a resist.

  As shown in FIG. 5A, a resist film 107 for preventing etching is formed on the p-layer side protective film 104. The resist film 107 can prevent the p-layer side protective film 104 from being etched at the same time when the substrate-side protective film 105 is etched. As shown in FIG. 5B, the substrate side protective film 105 is etched, and the resist pattern 106 is further removed. As shown in FIG. 5C, the RIE process is performed to form the recess 2 a in the substrate 100, and the resist film 108 is formed again on the p-layer side protective film 104.

  Then, the substrate-side protective film 105 is removed as shown in FIG. 6A, and the n-electrode 3 is formed in each of the recesses 2a as shown in FIG. 6B. In a later step, the p-layer side protective film 104 is removed, the p-electrode 7 is formed, and the semiconductor light-emitting device 1 can be obtained by dicing into individual pieces.

  In this way, the recess 2a can be formed, and the n-electrode 3 can be formed in the recess 2a. When the recess 2a is formed, an RIE treatment can be performed to make the surface of the peripheral wall surface and the inner bottom surface of the recess 2a rough, so that the light emitted from the light emitting layer 5 is totally reflected on the surface. The degree of reflection can be reduced, and the light extraction efficiency can be improved.

  Next, in the method for manufacturing the semiconductor light emitting device according to the first embodiment, a case where the film is formed on the substrate in the wafer state from the p electrode prior to the film formation of the n electrode will be described. FIG. 7 is a diagram for explaining the case where the film is formed from the p electrode prior to the film formation of the n electrode. In FIG. 7, the same components as those in FIGS. 4 to 6 are denoted by the same reference numerals and description thereof is omitted.

First, as shown in FIG. 7A, an n layer 101, a light emitting layer 102, and a p layer 103 are stacked on a substrate 100 in a wafer state, and a p electrode 7 is formed on each p layer 103. Further, a p-layer side protective film 110 is formed so as to cover the p-electrode 7. Then, as shown in FIG. 7B, a substrate-side protective film 105 made of SiO ₂ is formed on the entire surface on the substrate 100 side. The temperature at which the substrate-side protective film 105 is formed is 250 ° C. or lower. When the temperature at which the substrate side protective film 105 is formed is higher than 250 ° C., it becomes a factor that Vf increases. Therefore, Vf can be suppressed by setting the temperature for forming the substrate-side protective film 105 to 250 ° C. or lower. Subsequent steps are the same as the steps from FIG. As described above, the semiconductor light emitting device 1 in which the recess 2a is provided in the substrate 2 can be formed from the p-electrode before the n-electrode is formed.

  Next, the usage state of the semiconductor light emitting element according to the first embodiment of the present invention will be described with reference to FIG. FIG. 8 is a diagram for explaining a usage state of the semiconductor light emitting element according to the first embodiment of the present invention.

  As shown in FIG. 8, the semiconductor light emitting device 1 is die-bonded to a mounting surface 10 such as a lead frame or a wiring pattern. In this die bonding, a conductive adhesive 11 such as a silver paste is applied to the mounting surface 10 in advance, and after mounting the semiconductor light emitting element 1, the conductive adhesive 11 is cured to mount the semiconductor light emitting element 1. It is fixed to the surface 10. Then, after mounting the semiconductor light emitting element 1 on the mounting surface 10, the wire 12 is wired to the p bonding electrode 7 b of the p electrode 7.

  In the semiconductor light emitting device 1 in which the recess 2a is provided on the bottom surface side of the substrate 2, when the semiconductor light emitting device 1 is die-bonded on the mounting surface 10, the conductive adhesive 11 is filled in the gap around the n electrode 3 of the recess 2a. It becomes. And since the depth of the recessed part 2a is formed deeper than the height of the n electrode 3, the board | substrate 2 and the mounting surface 10 can be connected in the state without the protrusion by the n electrode 3. FIG. Therefore, since the n-electrode 3 serves as a fulcrum of the seesaw and the entire semiconductor light emitting device 1 does not tilt, the peripheral surface of the concave portion 2a of the substrate 2 and the mounting surface 10 can be in a connected state. Therefore, since the n electrode 3 and the mounting surface 10 can be connected in a stable state, the connection reliability can be increased. Further, since the peripheral surface of the recess 2a of the substrate 2 and the mounting surface 10 are connected by a surface, the heat from the substrate 2 is easily transferred to the mounting surface 10, so that the heat transfer effect can be improved.

(Embodiment 2)
A semiconductor light emitting device according to the second embodiment of the present invention will be described with reference to FIGS. FIG. 9 is a cross-sectional view of the semiconductor light emitting element according to Embodiment 2 of the present invention. FIG. 10 is a plan view of a semiconductor light emitting element according to Embodiment 2 of the present invention. 9 and 10, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals, and description thereof is omitted.

  As shown in FIGS. 9 and 10, the semiconductor light emitting element 15 according to the second embodiment is mounted face down. Therefore, the p electrode 16 is formed on almost the entire surface of the p layer 6. The p-electrode 16 is an electrode formed in two layers like the p-electrode 7 of the first embodiment, and includes a p-contact electrode 16a and a p-bonding electrode 16b.

  The p contact electrode 16a can be made of the same material as the p contact electrode 7a of the first embodiment. The p bonding electrode 16b can be made of the same material as the p bonding electrode 7b of the first embodiment.

  Since the semiconductor light emitting element 15 is mounted face down, the n electrode 3 is connected to a lead frame or a wiring pattern by wire bonding.

  When the semiconductor light emitting element 15 is mounted on a lead frame or a wiring pattern, the substrate 2 is sucked with a collet or the like and mounted upside down. Therefore, when the semiconductor light emitting element 15 mounted face down is provided with the n electrode 3 on the substrate 2 on which the recess 2a is formed, the n electrode 3 becomes lower than the adsorption surface when adsorbed. Therefore, it is hard to be damaged by a jig.

(Embodiment 3)
A semiconductor light-emitting device according to Embodiment 3 of the present invention will be described with reference to FIGS. FIG. 11 is a cross-sectional view of a semiconductor light emitting element according to Embodiment 3 of the present invention. FIG. 12 is a plan view of a semiconductor light emitting element according to Embodiment 3 of the present invention. 11 and 12, the same components as those in FIGS. 9 and 10 are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIGS. 11 and 12, in the semiconductor light emitting device 20 according to the third embodiment, a stepped portion 21 b is formed in a recess 21 a formed in the substrate 21. The staircase portion 21b is formed along the inner wall surface 21c of the recess 21a. Thus, by providing the staircase portion 21b on the inner wall surface 21c of the recess 21a, the degree of total reflection of the light emitted from the light emitting layer 5 from the staircase portion 21b can be reduced. Further, even if the staircase portion 21b is formed along the inner wall surface 21c, it cannot be projected on the peripheral surface of the concave portion 21a of the substrate 21, and therefore, there is a possibility of hitting a jig when the semiconductor light emitting element 20 is mounted. It does not increase.

(Embodiment 4)
A semiconductor light-emitting device according to Embodiment 4 of the present invention will be described with reference to FIG. FIG. 13 is a cross-sectional view of a semiconductor light emitting element according to Embodiment 4 of the present invention. In FIG. 13, the same components as those in FIG.

  As shown in FIG. 13, in the semiconductor light emitting device 25 according to the fourth embodiment, the inner wall surface 26b of the recess 26a formed in the substrate 26 is formed in a curved surface shape whose opening area gradually increases toward the outside. Has been. Thus, by forming the inner wall surface 26b of the recess 26a in a curved surface shape, the degree of total reflection of the light emitted from the light emitting layer 5 from the inner wall surface 26b can be reduced. Further, even if the inner wall surface 26b of the concave portion 26a is formed in a curved surface shape, it does not mean that it can protrude on the peripheral surface of the concave portion 26a of the substrate 26, so that it hits a jig when the semiconductor light emitting element 25 is mounted. The fear does not increase.

  As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment. For example, in the semiconductor light emitting device according to the present embodiment, the depth of the recess is such that the n electrode does not protrude from the substrate surface. However, the n electrode may slightly protrude from the substrate surface. This is because it is possible to lower the height at which the n electrode protrudes from the surface of the substrate by providing the n electrode on the bottom surface of the recess provided in the substrate, rather than providing the n electrode on the substrate in which the recess is not formed. . The lower the n electrode protrudes from the substrate surface, the lower the inclination of the entire semiconductor light emitting device when the semiconductor light emitting device is mounted on the mounting surface. In order to improve connection reliability, it is desirable to provide a recess in the substrate and provide an n-electrode on the bottom surface of the recess.

  Since the present invention can improve the connection reliability, a semiconductor light emitting device in which an n electrode is provided on one surface side of a conductive substrate and a semiconductor layer is stacked on the other surface side and a p electrode is provided. And the manufacturing method thereof.

Sectional drawing of the semiconductor light-emitting device based on Embodiment 1 of this invention. 1 is a bottom view of a semiconductor light emitting element according to Embodiment 1 of the present invention. (A) to (C) are graphs showing the relationship between current and voltage depending on the size of the n electrode. FIGS. 4A to 4D are diagrams for explaining a case where a film is formed from an n-electrode before a p-electrode is formed on a wafer-like substrate in the method for manufacturing a semiconductor light-emitting device according to the first embodiment of the present invention. FIGS. 4A to 4C are views for explaining a method for manufacturing a semiconductor light-emitting element performed subsequently to FIG. (A) And (B) is a figure explaining the manufacturing method of the semiconductor light-emitting device performed following FIG. The figure explaining the case where it forms into a film from a p electrode before film formation of an n electrode The figure explaining the use condition of the semiconductor light-emitting device based on Embodiment 1 of this invention. Sectional drawing of the semiconductor light-emitting device based on Embodiment 2 of this invention. Plan view of a semiconductor light emitting element according to Embodiment 2 of the present invention Sectional drawing of the semiconductor light-emitting device based on Embodiment 3 of this invention. Plan view of a semiconductor light emitting device according to Embodiment 3 of the present invention Sectional drawing of the semiconductor light-emitting device based on Embodiment 4 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Board | substrate 2a Recessed part 3 N electrode 3a n contact electrode 3b Intermediate electrode 3c n bonding electrode 4 n layer 5 Light emitting layer 6 p layer 7 p electrode 7a p contact electrode 7b p bonding electrode 10 Mounting surface 11 Conductive adhesive DESCRIPTION OF SYMBOLS 15 Semiconductor light emitting element 16 p electrode 16a p contact electrode 16b p bonding electrode 20 Semiconductor light emitting element 21 Substrate 21a Recessed part 21b Staircase part 21c Inner wall surface 25 Semiconductor light emitting element 26 Substrate 26a Recessed part 26b Inner wall surface 100 Substrate 101 N layer 102 Light emitting layer 103 p Layer 104 p-layer side protective film 105 substrate-side protective film 106 resist pattern 107 resist film 108 resist film 110 p-layer side protective film

Claims (10)

In a semiconductor light emitting device in which an n-electrode is provided on one surface side of a conductive substrate and a p-electrode is provided on a semiconductor layer laminated on the other surface side,
The n-electrode is provided in a recess provided in the conductive substrate. The semiconductor light emitting element according to claim 1, wherein the concave portion provided in the conductive substrate is formed deeper than a height of the n electrode. The semiconductor light emitting element according to claim 1, wherein a step portion is provided on an inner wall surface of the recess. 4. The semiconductor light emitting element according to claim 1, wherein an inner wall surface of the recess is formed in a curved surface shape in which an opening area gradually increases toward the outside. 5. The conductive substrate is formed of an n-type GaN substrate,
The contact electrode on the conductive substrate side of the n electrode is any one of Al, Ti, In, Cr, Zr, W, Sn, an alloy containing one or more of these metals, or a conductive film. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is formed. The n electrode includes the contact electrode, an intermediate electrode, and a bonding electrode,
When the contact electrode is made of Al and the bonding electrode is made of Au, the intermediate electrode is made of any one of Cr, Pt, Ti, W, Mo, Pd, Ni, Nb, and Rh, or these metals. 6. The semiconductor light-emitting element according to claim 1, wherein the semiconductor light-emitting element is formed of an alloy including one or more kinds or a conductive film. 5. The n-electrode according to claim 1, wherein if the n-electrode is formed in a substantially circular shape, one or more electrodes having a diameter of 65 μm or more or an area corresponding thereto are formed. The semiconductor light-emitting device described in 1. In a method for manufacturing a semiconductor light emitting device, in which an n electrode is provided on one surface side of a conductive substrate and a semiconductor layer is stacked on the other surface side, a p electrode is provided.
After laminating a semiconductor layer on the conductive substrate, forming a protective film on the conductive substrate,
The protective film is selectively RIE processed to provide a recess in the conductive substrate,
A method for manufacturing a semiconductor light emitting device, comprising removing the protective film and forming an n-electrode in the recess. The method for manufacturing a semiconductor light emitting element according to claim 8, wherein a film forming temperature of the protective film is 250 ° C. or lower. 10. The method of manufacturing a semiconductor light emitting element according to claim 8, wherein a resist film is formed on the semiconductor layer side before the protective film is selectively subjected to RIE treatment.

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