JP2007251042A5 - - Google Patents
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- JP2007251042A5 JP2007251042A5 JP2006075308A JP2006075308A JP2007251042A5 JP 2007251042 A5 JP2007251042 A5 JP 2007251042A5 JP 2006075308 A JP2006075308 A JP 2006075308A JP 2006075308 A JP2006075308 A JP 2006075308A JP 2007251042 A5 JP2007251042 A5 JP 2007251042A5
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006075308A JP4640828B2 (ja) | 2006-03-17 | 2006-03-17 | プラズマ処理方法及びプラズマ処理装置 |
TW096109196A TWI413178B (zh) | 2006-03-17 | 2007-03-16 | A plasma processing method and a plasma processing apparatus |
CNB2007100883743A CN100495641C (zh) | 2006-03-17 | 2007-03-16 | 等离子体处理方法及等离子体处理装置 |
US11/687,428 US7662646B2 (en) | 2006-03-17 | 2007-03-16 | Plasma processing method and plasma processing apparatus for performing accurate end point detection |
KR1020070025813A KR100866656B1 (ko) | 2006-03-17 | 2007-03-16 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
US12/637,955 US8580077B2 (en) | 2006-03-17 | 2009-12-15 | Plasma processing apparatus for performing accurate end point detection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006075308A JP4640828B2 (ja) | 2006-03-17 | 2006-03-17 | プラズマ処理方法及びプラズマ処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007251042A JP2007251042A (ja) | 2007-09-27 |
JP2007251042A5 true JP2007251042A5 (ja) | 2009-03-05 |
JP4640828B2 JP4640828B2 (ja) | 2011-03-02 |
Family
ID=38594983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006075308A Active JP4640828B2 (ja) | 2006-03-17 | 2006-03-17 | プラズマ処理方法及びプラズマ処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4640828B2 (ja) |
KR (1) | KR100866656B1 (ja) |
CN (1) | CN100495641C (ja) |
TW (1) | TWI413178B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5027753B2 (ja) * | 2008-07-30 | 2012-09-19 | 東京エレクトロン株式会社 | 基板処理制御方法及び記憶媒体 |
CN103594390B (zh) * | 2012-08-15 | 2018-07-06 | 盛美半导体设备(上海)有限公司 | 终点检测装置及终点检测方法 |
WO2014062886A1 (en) * | 2012-10-17 | 2014-04-24 | Tokyo Electron Limited | Plasma etching endpoint detection using multivariate analysis |
JP6523732B2 (ja) * | 2015-03-26 | 2019-06-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
KR20180073700A (ko) | 2015-11-16 | 2018-07-02 | 도쿄엘렉트론가부시키가이샤 | 진보된 광학 센서 및 플라즈마 챔버용 방법 |
JP6713298B2 (ja) * | 2016-02-22 | 2020-06-24 | 芝浦メカトロニクス株式会社 | プラズマ処理方法、およびプラズマ処理装置 |
WO2017172536A1 (en) | 2016-03-31 | 2017-10-05 | Tokyo Electron Limited | Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy |
US10453653B2 (en) | 2016-09-02 | 2019-10-22 | Tokyo Electron Limited | Endpoint detection algorithm for atomic layer etching (ALE) |
US10436717B2 (en) | 2016-11-18 | 2019-10-08 | Tokyo Electron Limited | Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process |
SG11201908533PA (en) | 2017-03-17 | 2019-10-30 | Tokyo Electron Ltd | Surface modification control for etch metric enhancement |
CN107727654B (zh) * | 2017-09-29 | 2019-12-24 | 绵阳京东方光电科技有限公司 | 膜层检测方法、装置及膜层检测系统 |
JP7055054B2 (ja) * | 2018-04-11 | 2022-04-15 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム |
JP6920245B2 (ja) * | 2018-04-23 | 2021-08-18 | 東京エレクトロン株式会社 | 温度制御方法 |
SG11202111021UA (en) | 2019-05-23 | 2021-11-29 | Tokyo Electron Ltd | Optical diagnostics of semiconductor process using hyperspectral imaging |
US10910201B1 (en) | 2019-08-22 | 2021-02-02 | Tokyo Electron Limited | Synthetic wavelengths for endpoint detection in plasma etching |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6564114B1 (en) | 1999-09-08 | 2003-05-13 | Advanced Micro Devices, Inc. | Determining endpoint in etching processes using real-time principal components analysis of optical emission spectra |
JP4567828B2 (ja) * | 1999-09-14 | 2010-10-20 | 東京エレクトロン株式会社 | 終点検出方法 |
US6449038B1 (en) * | 1999-12-13 | 2002-09-10 | Applied Materials, Inc. | Detecting a process endpoint from a change in reflectivity |
KR100793453B1 (ko) * | 2000-07-07 | 2008-01-14 | 동경 엘렉트론 주식회사 | 처리 장치의 유지 보수 방법, 처리 장치의 자동 검사방법, 처리 장치의 자동 복귀 방법 및 처리 장치를구동하는 소프트웨어의 자기 진단 방법 |
JP2003100708A (ja) * | 2001-09-27 | 2003-04-04 | Mitsubishi Electric Corp | 終点判別方法、半導体処理装置および半導体装置の製造方法 |
JP2003131463A (ja) * | 2001-10-29 | 2003-05-09 | Nitto Denko Corp | 半導電性ベルト |
JP4173311B2 (ja) * | 2002-03-12 | 2008-10-29 | 東京エレクトロン株式会社 | シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置 |
US7505879B2 (en) * | 2002-06-05 | 2009-03-17 | Tokyo Electron Limited | Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus |
US6830939B2 (en) | 2002-08-28 | 2004-12-14 | Verity Instruments, Inc. | System and method for determining endpoint in etch processes using partial least squares discriminant analysis in the time domain of optical emission spectra |
JP4085259B2 (ja) * | 2002-11-20 | 2008-05-14 | 株式会社島津製作所 | ウエハ検査用x線透視装置 |
JP4500510B2 (ja) * | 2003-06-05 | 2010-07-14 | 東京エレクトロン株式会社 | エッチング量検出方法,エッチング方法,およびエッチング装置 |
US20050020073A1 (en) * | 2003-07-22 | 2005-01-27 | Lam Research Corporation | Method and system for electronic spatial filtering of spectral reflectometer optical signals |
JP4448335B2 (ja) * | 2004-01-08 | 2010-04-07 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
-
2006
- 2006-03-17 JP JP2006075308A patent/JP4640828B2/ja active Active
-
2007
- 2007-03-16 TW TW096109196A patent/TWI413178B/zh active
- 2007-03-16 CN CNB2007100883743A patent/CN100495641C/zh active Active
- 2007-03-16 KR KR1020070025813A patent/KR100866656B1/ko active IP Right Grant
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