JP2007251042A5 - - Google Patents

Download PDF

Info

Publication number
JP2007251042A5
JP2007251042A5 JP2006075308A JP2006075308A JP2007251042A5 JP 2007251042 A5 JP2007251042 A5 JP 2007251042A5 JP 2006075308 A JP2006075308 A JP 2006075308A JP 2006075308 A JP2006075308 A JP 2006075308A JP 2007251042 A5 JP2007251042 A5 JP 2007251042A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006075308A
Other versions
JP2007251042A (ja
JP4640828B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2006075308A external-priority patent/JP4640828B2/ja
Priority to JP2006075308A priority Critical patent/JP4640828B2/ja
Priority to KR1020070025813A priority patent/KR100866656B1/ko
Priority to CNB2007100883743A priority patent/CN100495641C/zh
Priority to US11/687,428 priority patent/US7662646B2/en
Priority to TW096109196A priority patent/TWI413178B/zh
Publication of JP2007251042A publication Critical patent/JP2007251042A/ja
Publication of JP2007251042A5 publication Critical patent/JP2007251042A5/ja
Priority to US12/637,955 priority patent/US8580077B2/en
Publication of JP4640828B2 publication Critical patent/JP4640828B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006075308A 2006-03-17 2006-03-17 プラズマ処理方法及びプラズマ処理装置 Active JP4640828B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006075308A JP4640828B2 (ja) 2006-03-17 2006-03-17 プラズマ処理方法及びプラズマ処理装置
TW096109196A TWI413178B (zh) 2006-03-17 2007-03-16 A plasma processing method and a plasma processing apparatus
CNB2007100883743A CN100495641C (zh) 2006-03-17 2007-03-16 等离子体处理方法及等离子体处理装置
US11/687,428 US7662646B2 (en) 2006-03-17 2007-03-16 Plasma processing method and plasma processing apparatus for performing accurate end point detection
KR1020070025813A KR100866656B1 (ko) 2006-03-17 2007-03-16 플라즈마 처리 방법 및 플라즈마 처리 장치
US12/637,955 US8580077B2 (en) 2006-03-17 2009-12-15 Plasma processing apparatus for performing accurate end point detection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006075308A JP4640828B2 (ja) 2006-03-17 2006-03-17 プラズマ処理方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2007251042A JP2007251042A (ja) 2007-09-27
JP2007251042A5 true JP2007251042A5 (ja) 2009-03-05
JP4640828B2 JP4640828B2 (ja) 2011-03-02

Family

ID=38594983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006075308A Active JP4640828B2 (ja) 2006-03-17 2006-03-17 プラズマ処理方法及びプラズマ処理装置

Country Status (4)

Country Link
JP (1) JP4640828B2 (ja)
KR (1) KR100866656B1 (ja)
CN (1) CN100495641C (ja)
TW (1) TWI413178B (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5027753B2 (ja) * 2008-07-30 2012-09-19 東京エレクトロン株式会社 基板処理制御方法及び記憶媒体
CN103594390B (zh) * 2012-08-15 2018-07-06 盛美半导体设备（上海）有限公司 终点检测装置及终点检测方法
WO2014062886A1 (en) * 2012-10-17 2014-04-24 Tokyo Electron Limited Plasma etching endpoint detection using multivariate analysis
JP6523732B2 (ja) * 2015-03-26 2019-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR20180073700A (ko) 2015-11-16 2018-07-02 도쿄엘렉트론가부시키가이샤 진보된 광학 센서 및 플라즈마 챔버용 방법
JP6713298B2 (ja) * 2016-02-22 2020-06-24 芝浦メカトロニクス株式会社 プラズマ処理方法、およびプラズマ処理装置
WO2017172536A1 (en) 2016-03-31 2017-10-05 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10453653B2 (en) 2016-09-02 2019-10-22 Tokyo Electron Limited Endpoint detection algorithm for atomic layer etching (ALE)
US10436717B2 (en) 2016-11-18 2019-10-08 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
SG11201908533PA (en) 2017-03-17 2019-10-30 Tokyo Electron Ltd Surface modification control for etch metric enhancement
CN107727654B (zh) * 2017-09-29 2019-12-24 绵阳京东方光电科技有限公司 膜层检测方法、装置及膜层检测系统
JP7055054B2 (ja) * 2018-04-11 2022-04-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
SG11202111021UA (en) 2019-05-23 2021-11-29 Tokyo Electron Ltd Optical diagnostics of semiconductor process using hyperspectral imaging
US10910201B1 (en) 2019-08-22 2021-02-02 Tokyo Electron Limited Synthetic wavelengths for endpoint detection in plasma etching

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6564114B1 (en) 1999-09-08 2003-05-13 Advanced Micro Devices, Inc. Determining endpoint in etching processes using real-time principal components analysis of optical emission spectra
JP4567828B2 (ja) * 1999-09-14 2010-10-20 東京エレクトロン株式会社 終点検出方法
US6449038B1 (en) * 1999-12-13 2002-09-10 Applied Materials, Inc. Detecting a process endpoint from a change in reflectivity
KR100793453B1 (ko) * 2000-07-07 2008-01-14 동경 엘렉트론 주식회사 처리 장치의 유지 보수 방법, 처리 장치의 자동 검사방법, 처리 장치의 자동 복귀 방법 및 처리 장치를구동하는 소프트웨어의 자기 진단 방법
JP2003100708A (ja) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp 終点判別方法、半導体処理装置および半導体装置の製造方法
JP2003131463A (ja) * 2001-10-29 2003-05-09 Nitto Denko Corp 半導電性ベルト
JP4173311B2 (ja) * 2002-03-12 2008-10-29 東京エレクトロン株式会社 シーズニング終了検知方法及びプラズマ処理方法並びにプラズマ処理装置
US7505879B2 (en) * 2002-06-05 2009-03-17 Tokyo Electron Limited Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus
US6830939B2 (en) 2002-08-28 2004-12-14 Verity Instruments, Inc. System and method for determining endpoint in etch processes using partial least squares discriminant analysis in the time domain of optical emission spectra
JP4085259B2 (ja) * 2002-11-20 2008-05-14 株式会社島津製作所 ウエハ検査用ｘ線透視装置
JP4500510B2 (ja) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 エッチング量検出方法，エッチング方法，およびエッチング装置
US20050020073A1 (en) * 2003-07-22 2005-01-27 Lam Research Corporation Method and system for electronic spatial filtering of spectral reflectometer optical signals
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Similar Documents

Publication Publication Date Title
BRMU8603216U8 (ja)
BRPI0715824A8 (ja)
JP2007251042A5 (ja)
BRPI0713487A2 (ja)
BR122016023444A2 (ja)
BRPI0708307B8 (ja)
AT504380A8 (ja)
CN300726641S (zh) 煮蛋机(2)
CN300725944S (zh) 童装(3890)
CN300728969S (zh) 办公椅座靠垫(车缝5424)
CN300725925S (zh) 童装(3791)
CN300729728S (zh) 软胶贴饰(蝴蝶)
CN300725926S (zh) 童装(3793)
CN300730370S (zh) 客运车站补票一体机
CN300728612S (zh) 拖鞋(3131)
CN300728560S (zh) 拖鞋(3431)
CN300728538S (zh) 拖鞋(3623)
CN300725927S (zh) 童装(3795)
CN300727898S (zh) 插片(14)
CN300727883S (zh) 标签(2)
CN300727597S (zh) 微型打印机机芯
CN300727384S (zh) 汽车中门板(1)
CN300727043S (zh) 铅笔包装袋(188)
CN300725919S (zh) 童装(3752)
CN300730400S (zh) 电子游戏机用操作器