JP2007250925A - Wiring structure and its method for manufacturing - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring structure and its method for manufacturing which can secure the adhesion strength of wiring and can secure an area for connection lug. <P>SOLUTION: A wiring structure 1 includes an insulation resin layer 11 on the surface one of which a predetermined wiring pattern is formed, a wiring pattern formed in the insulation layer 11. As the patterned wiring, it includes a first wiring metal layer 12 which forms an interface with the insulation resin layer 11, a second wiring metal layer 13 which protrudes partially from the surface one of the insulation resin layer 11, and a protection layer 14 covering the exposed portion of the wiring in the surface one. The resin of the insulation resin layer 11 infiltrates into the concave portion formed in the interface, and the first wiring layer 12 is joined with the insulation resin layer 11. The concave is formed by the surface roughening of the first wiring metal layer 12 in the forming of wiring. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a wiring structure and a manufacturing method thereof.

  As a method for reducing the size of functional parts and functional modules, there is board-less wiring formation and mounting. As a representative example, what is called MID (Molded Interconnect Device) can be downsized by eliminating the board by configuring the wiring on the surface of the molded body and mounting the parts.

  Here, in the conventional wiring structure, after forming a separation groove in the conductive foil, an insulating resin is applied using the conductive foil as a supporting substrate, and after being inverted, the conductive foil is used with the insulating resin as a supporting substrate. And is separated as a conductive path (see, for example, Patent Document 1). Here, it is expected that a thin electronic circuit device is realized by using a minimum necessary material. Further, in the above-described configuration, the conductive path is embedded in the insulating resin, and the side surface of the conductive path is curved or provided with a ridge. By this scissors, it is possible to realize a substrate capable of preventing the escape of the conductive path. Note that the surface of the insulating resin as the support substrate and the surface of the conductive path (conductive foil) are substantially flush.

  Further, in a configuration in which the conductor circuit is composed of two or more types of metal layer portions, there is a configuration in which the width of the second metal portion on the inner layer side is larger than the width of the first metal portion on the outer layer side (for example, Patent Document 2). Here, in a method of manufacturing a printed wiring board by a transfer method, after forming two or more types of metal layer parts on a metal carrier by plating, the first metal part at least on the outer layer side of the metal layer part The metal part is etched to form a conductor circuit so that the width becomes smaller than the width of the second metal part on the inner layer side, thereby ensuring adhesion. In addition, the surface of the insulating layer (insulating resin layer) 6 and the surface of the first metal part are substantially flush.

  In addition, after applying a photocurable resin on the temporary substrate, exposing and developing to form a reverse pattern opposite to the conductor wiring pattern, the conductor wiring is formed by electroplating on the electric circuit formed in the gap of the reverse pattern. After forming the temporary substrate in a mold and molding the insulating substrate on the wiring pattern forming surface, the temporary substrate is removed from the molded body, and the insulating mask is formed together with the conductor wiring pattern. Some have been transferred to the surface (for example, see Patent Document 3). Here, the insulating mask and the surface of the conductor wiring pattern are substantially flush.

In addition, an insulating film is formed on a semiconductor substrate on which a semiconductor element such as a transistor is formed, and a wiring groove is formed on the surface of the insulating film, and the side wall and the bottom surface in the wiring groove are formed in the wiring groove. Through the covering TiN protective film, 4 at. Some of them are embedded with a buried wiring layer (Cu-4 at.% Mg wiring layer) made of a Cu film in which% Mg is dissolved (see, for example, Patent Document 4). This Cu-4 at. On the% Mg wiring layer, an MgO film that functions as an anti-oxidation barrier is formed to prevent oxidation. The surface of the insulating film and the surface of the embedded wiring layer (or the surface of the MgO film) are substantially flush.
Japanese Patent No. 3634743 (for example, page 6, page 7, FIG. 1 etc.) Japanese Patent Laying-Open No. 2005-244039 (for example, page 3, page 4, FIG. 2 etc.) Japanese Patent Laid-Open No. 11-17314 (for example, page 4, page 5, FIG. 1, etc.) JP-A-11-186273 (for example, page 7, page 12, FIG. 31)

  However, in the conventional wiring structure, since the surface is substantially flat, there is room for further improvement in terms of securing the surface area of the connection terminal required for mounting. Here, according to the configuration disclosed in Patent Document 1, when the electronic component is mounted with solder or the like, a case where the connection height cannot be obtained is assumed. According to the configuration disclosed in Patent Document 2, a metal part that exposes the surface is processed, and a pattern width cannot be obtained in miniaturization, so that a reduction in surface mounting area and a variation in exposed electrode area may occur. is assumed. According to the configuration disclosed in Patent Document 3, it is assumed that the mounting surface area is reduced by transferring the insulating mask, and that the connection cannot be secured due to insufficient surface area in high-density mounting in miniaturization. According to the configuration disclosed in Patent Document 4, a semiconductor device that is low in resistance and excellent in electromigration resistance and stress migration resistance can be provided, but a connection cannot be secured due to insufficient surface area for mounting. Is assumed.

  The present invention has been made to solve the conventional problems, and an object of the present invention is to provide a wiring structure that can secure wiring adhesion and a connection terminal area, and a manufacturing method thereof.

  The wiring structure according to the first aspect of the present invention includes a resin layer having a predetermined wiring pattern formed on one surface thereof, and a patterned wiring embedded in the resin layer. The wiring includes two or more wiring layers including a first wiring layer forming an interface with the resin layer and a second wiring layer partially protruding on one surface of the resin layer, and the interface includes The resin of the resin layer enters the formed recess, and the first wiring layer and the resin layer are bonded.

  According to a second aspect of the present invention, there is provided a wiring structure according to the first aspect, wherein any two or more of the two or more wiring layers are exposed on one surface of the resin layer.

  According to a third aspect of the present invention, there is provided a wiring structure according to the first aspect, wherein the first wiring layer is made of Cu and the second wiring layer is made of Ni.

According to a fourth aspect of the present invention, there is provided the wiring structure according to the third aspect, wherein the wiring exposed surface of the wiring pattern formed on one surface of the resin layer is covered with a coating made of Au. Yes.
According to a fifth aspect of the present invention, there is provided a wiring structure according to the first aspect, wherein the wiring pattern is formed so as to extend from one surface of the resin layer to the other surface.

  According to a sixth aspect of the present invention, there is provided a wiring structure according to the first aspect, wherein the predetermined functional component is embedded in the resin layer.

  Furthermore, the manufacturing method of the wiring structure of the present invention according to claim 7 includes a mold forming step of covering a region other than the predetermined wiring pattern region on the upper surface of the first mold with an insulating film, and wiring in the wiring pattern region. A wiring step of forming a wiring by stacking a plurality of wiring layers for each material; a roughening step of roughening a top wiring layer of the plurality of stacked wiring layers; and a first gold on which the wiring is formed Covering the mold with a second mold, injecting an insulating resin into the mold, and molding an insulating resin layer in which the wiring is embedded; wiring on one surface of the insulating resin layer A mold release step for separating the first and second molds and the insulating film from the molded body to which the pattern is transferred, and in the resin injection step, the surface roughened in the surface roughening step. The insulating resin penetrates into the concave portion of the uppermost wiring layer, and in the mold release process, a plurality of products are stacked in the wiring process. By the bottom wiring layer of the wiring layer, it is characterized in that projecting from one surface of the resin layer.

  According to an eighth aspect of the present invention, there is provided a method for manufacturing a wiring structure according to the seventh aspect, wherein, in the mold forming step, a region other than a predetermined wiring pattern region straddling a plurality of surfaces on the first mold is formed. Covering with an insulating film, and in the releasing step, the first and second molds and the insulating film are separated from the molded body having the wiring pattern transferred across a plurality of surfaces of the insulating resin layer, and The lowermost wiring layer of the wiring layers laminated in the wiring process is characterized by protruding from a plurality of surfaces of the resin layer.

  Furthermore, the manufacturing method of the wiring structure of the present invention according to claim 9 is the method according to claim 7, wherein the wiring formed by laminating a plurality of wiring layers for each wiring material and a predetermined function before the resin injection step. It is characterized by having a component mounting process for connecting the components.

  The present invention includes a resin layer having a predetermined wiring pattern formed on one surface and a patterned wiring embedded in the resin layer, wherein the wiring is an interface with the resin layer. And two or more wiring layers including a second wiring layer partially protruding on one surface of the resin layer, and a recess formed in the interface includes the resin layer. Since the resin has entered and the first wiring layer and the resin layer are bonded, it is possible to provide a wiring structure having an effect of ensuring wiring adhesion and securing a connection terminal area. .

  Hereinafter, the manufacturing method of the wiring structure which concerns on embodiment of this invention is demonstrated using drawing.

  A wiring structure according to a first embodiment of the present invention is shown in FIGS.

  In FIG. 1, a wiring structure 1 includes a three-dimensionally formed insulating resin layer 11, a first wiring metal layer 12 that is embedded in the insulating resin layer 11 to form a patterned wiring, and the wiring metal layer. 12 is a protective layer that covers and protects the second wiring metal layer 13 that forms a patterned wiring layered on 12 and the wiring metal layer that is exposed on one surface on which the wiring pattern of the insulating resin layer 11 is formed. 14.

  Here, the second wiring metal layer 13 is made of, for example, copper, and is formed so that a portion exposed from the one surface partially protrudes from the one surface. Further, the first wiring metal layer 12 is made of nickel, for example, and, as shown in FIG. 2, a recess 15 is formed on the interface with the insulating resin layer 11 (particularly on the one surface side) by a roughening process described later. Is formed. The resin forming the insulating resin layer 11 enters the recess 15 to increase the adhesive strength between the resin and the first wiring metal layer 12 (so-called anchor effect).

  A method of manufacturing the wiring structure 1 configured as described above will be described with reference to FIG.

  3A, the mold 18 made of a predetermined metal material is covered with an insulating film having a predetermined thickness, and the insulating film is etched into a wiring pattern with a predetermined width.

  In the wiring formation step of FIG. 3B, a plurality of types of metals are sequentially plated on the exposed surface of the mold 18 by the above-described etching process, and a plurality of types of wiring metal layers are laminated. Here, two types of metals (for example, Cu and Ni) are sequentially plated, and the second wiring metal layer 13 is laminated on the first wiring metal layer 12.

  In the roughening treatment step (corresponding to the roughening step) in FIG. 3C, the exposed surface of the first wiring metal layer 12 exposed from the mold 18 (insulating film 17) is roughened by, for example, etching. To do. Here, only the metal forming the first wiring metal layer 12 is selectively roughened, and the second wiring metal layer 13 is not roughened. In the first wiring metal layer 12, a recess 15 is formed on the interface side with the insulating film 17 by roughening.

  In the resin injection step of FIG. 3 (d), the three-dimensional molded body including the insulating resin layer 11 is set by setting the molds 19 and 20 patterned into a molding apparatus (not shown), and injecting and curing a predetermined resin. Form. Here, since the exposed surface of the first wiring metal layer 12 is roughened as described above, at the time of molding, the resin enters the concave portion 15, and the insulating resin layer 11 of the first wiring metal layer 12. Adhesion with respect to is improved.

  3E, the molds 18, 19, and 20 are separated after the resin injected in the resin injection process is cured. By this release process, a patterned wiring made of the wiring metal layers 12 and 13 is formed on the insulating resin layer 11. Here, since the first wiring metal layer 12 is roughened and the second wiring metal layer 13 is not roughened as described above, the wiring exposed portion (of the wiring pattern) on one surface of the insulating resin layer 11 is not affected. The shape (corresponding to the wiring exposed surface) is stable, and an excellent connection terminal is formed. Moreover, since the 2nd wiring metal layer 13 protrudes on the one surface of the insulating resin layer 11, a mounting area can be earned.

  Further, after the mold release step, a protective treatment step for covering and protecting the wiring exposed portion on one surface of the insulating resin layer 11 is performed. In this protection treatment step, the wiring exposed portion is covered with a predetermined metal material, and the protective layer 14 is formed. The protective layer 14 can protect the exposed wiring portion from deterioration due to contact during mounting, or deterioration with time.

  According to the wiring structure 1 according to the first embodiment of the present invention, the insulating resin layer 11 (corresponding to a resin layer) having a predetermined wiring pattern formed on one surface, and the insulating resin layer 11 and a wiring pattern (corresponding to a patterned wiring) formed on the first wiring metal layer 12 (first wiring) that forms an interface with the insulating resin layer 11 as the patterned wiring. Corresponding to a wiring layer), a second wiring metal layer 13 (corresponding to a second wiring layer) partially protruding on one surface of the insulating resin layer 11, and a protective layer 14 covering the wiring exposed portion, (Corresponding to two or more wiring layers), the resin of the insulating resin layer 11 penetrates into the recess 15 formed at the interface, and the first wiring metal layer 12 and the insulating resin layer 11 are bonded. is doing. This configuration corresponds to an embodiment of the present invention according to claims 1 and 7.

  With this configuration, the wiring portion embedded in the insulating resin layer 11 (for example, the wiring metal layers 12 and 13) is surrounded by the resin of the insulating resin layer 11, so that the wiring adhesion is improved. Furthermore, a stable adhesion can be ensured by configuring the wiring with two or more types of wiring materials and covering them with an insulating resin without exposing part or all of the embedded wiring materials to the surface. Further, by forming the wiring portion (for example, the second wiring metal layer 13) exposed on one surface (front surface) of the insulating resin layer 11 to have a convex shape, the bonding area of solder or the like increases or the connection of bumps or the like increases. Since the height increases and contributes to stress relaxation, the reliability of the surface mount component can be improved. The first wiring metal layer 12 corresponds to the uppermost wiring layer, the second wiring metal layer 13 corresponds to the lowermost wiring layer, the mold 18 corresponds to the first mold, and the mold 19 , 20 corresponds to the second mold.

Further, according to the present embodiment, a part of the wiring metal layers 12 and 13 made of different wiring materials (corresponding to any two or more of the two or more wiring layers) is exposed on one surface of the insulating resin layer 11. It has the structure. This configuration corresponds to an embodiment of the present invention according to claim 2. With this configuration, it is possible to realize a wiring structure optimized for the mounting form and plating property.
Further, according to the present embodiment, the second wiring metal layer 13 is made of Cu, and the first wiring metal layer 12 is made of Ni. This configuration corresponds to an embodiment of the present invention according to claim 3. With this configuration, it is possible to prevent deterioration of a highly corrosive wiring material such as Cu.

  Further, according to the present embodiment, the protective layer 14 (corresponding to a wiring material (a film made of Au)) is formed on the wiring exposed portion of the wiring pattern formed on one surface of the insulating resin layer 11, and the first A wiring is formed together with Ni of the wiring metal layer 12 and Cu of the second wiring metal layer 13. This configuration corresponds to an embodiment of the present invention according to claim 4. With this configuration, Ni, Cu, and Au corresponding to the wiring material are used, so environmental stability is excellent. Various connection forms such as solder, wire bonding, anisotropic conductive film (ACF) connection, and stable connection structure Can be obtained.

  In the above-described embodiment, the case where the wiring metal layers 12 and 13 are laminated on the mold 18, the resin is injected, molded and released, and then the wiring exposed portion is covered with the protective layer 14 will be described. However, in the present invention, the protective layer 14 is formed after the insulating film 17 covering the mold 18 is etched into a wiring pattern shape before the wiring metal layers 12 and 13 are formed during the above-described mold forming process. After that, the same effect can be obtained by forming the wiring metal layers 12 and 13 on the protective layer 14.

  Here, a first embodiment of the present invention will be described.

  In the first embodiment, a diamond-like carbon (DLC) film (corresponding to 17 in FIG. 3) is formed on a metal mold (corresponding to 18 in FIG. 3) made of stainless steel (SUS420J2) with a plasma CVD apparatus. About 1 μm. Thereafter, the DLC film was etched into a pattern by an excimer laser processing apparatus (corresponding to 16 in FIG. 3). The pattern processing width etched at this time was 30 μm. Then, plating was performed by Ni sulfamic acid plating and copper sulfate plating so that Ni was 3 μm thick and Cu was 5 μm thick on the SUS exposed surface. Then, the roughening process of the copper pattern was performed in Cu roughening process liquid BO-7770V (made by MEC).

  Next, after setting a patterned die (corresponding to 19 and 20 in FIG. 3) in a molding apparatus, epoxy resin G770-L (manufactured by Sumitomo Bakelite) is cured by transfer molding to obtain a three-dimensional molded body. Formed. The epoxy resin (corresponding to 11 in FIG. 3) is thermally cured and then released, and Ni / Cu wiring patterned on the cured epoxy resin (corresponding to 12 and 13 in FIG. 3 (e)) Could be formed. At this time, due to the roughening treatment of Cu (corresponding to 13 in FIG. 3), Cu is etched preferentially at the mold interface, so that the epoxy resin penetrates during molding and leads to wiring (12 in FIG. 3). The adhesive strength to the epoxy resin layer (corresponding to 11 in FIG. 3). Further, Cu is etched, but Ni is not etched, so that etching is stopped, the wiring exposed portion forms a stable shape, and an excellent connection terminal shape is obtained. Also, with such a structure, the area of Cu exposed on the surface layer is close to the wiring width, so that the mounting area can be increased.

  After that, in order to prevent surface mounting and deterioration over time, it was possible to plate the wiring surface (corresponding to the wiring exposed portion) by about 0.3 μm with electroless gold plating Muden Gold AU (Okuno Pharmaceutical Co., Ltd.). . Here, the molding is performed after Ni and Cu are plated on a mold (corresponding to 18 in FIG. 3), but Ni and Cu may be sequentially plated after electrolytic Au plating.

  Next, a wiring structure according to the second embodiment of the present invention is shown in FIG. This is different from the first embodiment in that a wiring pattern (or a wiring exposed portion) is formed across two or more surfaces of the insulating resin layer 11. In addition, the same code | symbol is provided to the same structure as 1st Embodiment, and description is abbreviate | omitted partially.

  In FIG. 4, the wiring structure 1 ′ is a three-dimensionally formed insulating resin layer 11 and a first embedded in the insulating resin layer 11 to form a wiring pattern across two or more surfaces of the insulating resin layer 11. The wiring metal layers 12a and 12b, the second wiring metal layers 13a and 13b that are laminated on the wiring metal layers 12a and 12b, respectively, and the wiring pattern of the insulating resin layer 11 are formed on the surface on which the wiring pattern is formed. And a protective layer 14a, 14b that covers and protects the exposed wiring metal layer.

  Here, the second wiring metal layers 13a and 13b are made of Cu, for example, and are formed so that portions exposed from the two or more surfaces partially protrude from the two or more surfaces. Further, the first wiring metal layers 12a and 12b are made of Ni, for example, and are not shown in the interface (particularly the two or more surfaces) with the insulating resin layer 11 by a wiring formation / roughening process described later. A recess (corresponding to 15 in FIG. 2) is formed. When the resin forming the insulating resin layer 11 enters the recess, the adhesive strength between the resin and the first wiring metal layers 12a and 12b is increased (so-called anchor effect).

  A method of manufacturing the wiring structure 1 ′ configured as described above will be described with reference to FIG.

  5A, a mold 18 made of a predetermined metal material and having a plurality of surfaces is formed by machining, and an insulating film 17 having a predetermined thickness is formed on the mold 18. Further, the insulating film 17 is etched into a wiring pattern with a predetermined width.

  The wiring formation / roughening process in FIG. 5B corresponds to the wiring formation process in FIG. 3B and the roughening process in FIG. Also, the resin injection step in FIG. 5C and the release step in FIG. 5D correspond to the resin injection step in FIG. 3D and the release step in FIG. 3E, respectively. Furthermore, also in the present embodiment, after the mold release step, a protective treatment step is performed to cover and protect the wiring exposed portions on the plurality of surfaces of the insulating resin layer 11 with the protective layers 14a and 14b.

  According to the wiring structure 1 ′ according to the second embodiment of the present invention, the configuration in which the wiring pattern is continuously formed on the plurality of surfaces of the insulating resin layer 11 (from one surface to the other surface). Corresponding to the structure formed in the above. This configuration corresponds to an embodiment of the present invention according to claims 5 and 8. By applying this configuration, a substrate having a complicated shape can be formed, so that a substrate molded body that is optimal for a structure to be mounted can be formed, and miniaturization and high functionality can be achieved.

  In the above-described embodiment, the wiring metal layers 12a, 12b, 13a, and 13b are laminated on the mold 18, and then the resin is injected to form and release, and then the wiring exposed portions are protected layers 14a and 14b. In the present invention, the metal film layers 12a, 12b, and 13a are also etched after the insulating film 17 covering the mold 18 is etched into a wiring pattern in the above-described mold forming process. , 13b is formed before the protective layers 14a, 14b are formed, and then the wiring metal layers 12a, 12b, 13a, 13b are formed on the protective layers 14a, 14b.

  Here, a second embodiment of the present invention will be described.

  In the second example, the first example was applied to form a mold using stainless steel (SUS420J2). First, a die having a plurality of surfaces (corresponding to 18 in FIG. 5) was formed by machining, and then a DLC film of about 1 μm was formed by a plasma CVD apparatus (corresponding to 17 in FIG. 5). For pattern processing, an excimer laser processing apparatus (corresponding to 16 in FIG. 5) was used to form a wiring pattern by point drawing. Thereafter, plating was performed in the same manner as in the first example, and a three-dimensional molded body with the wiring pattern transferred thereon could be formed by molding.

  Next, FIG. 6 shows a wiring structure according to a third embodiment of the present invention. This is different from the first embodiment in that a semiconductor chip 21 as a functional component is embedded in the insulating resin layer 11. In addition, the same code | symbol is provided to the same structure as 1st Embodiment, and description is abbreviate | omitted partially.

  In FIG. 6, the wiring structure 1 ″ includes a three-dimensionally formed insulating resin layer 11, a first wiring metal layer 12 embedded in the insulating resin layer 11 to form a wiring pattern, and the wiring metal layer 12. A second wiring metal layer 13 that is laminated to form a wiring pattern; a protective layer 14 that covers and protects the wiring metal layer exposed on one surface of the insulating resin layer 11 on which the wiring pattern is formed; and an insulating resin The semiconductor chip 21 is embedded in the layer 11 and connected to the wiring pattern by the conductive adhesive 22.

  Here, the semiconductor chip 21 is bonded and electrically connected to any of a plurality of wirings (corresponding to 12 and 13 in the figure) with a conductive adhesive 22. The second wiring metal layer 13 is made of, for example, Cu, and is formed so that a portion exposed from the one surface partially protrudes from the one surface. Further, the first wiring metal layer 12 is made of, for example, Ni, and a concave portion (corresponding to 15 in FIG. 2) is formed on the interface with the insulating resin layer 11 (particularly on the one surface side) by a roughening process described later. ) Is formed. When the resin forming the insulating resin layer 11 enters the recess, the adhesive strength between the resin and the first wiring metal layer 12 is increased (so-called anchor effect).

  A manufacturing method of the wiring structure 1 ″ configured as described above will be described with reference to FIGS. 7A and 7B. Here, it corresponds to the mold forming process of FIG. 3A and the wiring forming process of FIG. Description of the process to perform is abbreviate | omitted.

  The mold forming process and the wiring forming process are performed by applying the first embodiment, and thereafter, the roughening process of FIG. 7A (corresponding to FIG. 3C) is performed. 7B, the conductive adhesive 22 is applied to the connection terminal portions (corresponding to the wiring metal layers 12 and 13 in FIG. 7) formed on the mold 18 (insulating film 17). After that, the semiconductor chip 21 is bonded to the connection terminal portion by the conductive adhesive 22, and the conductive adhesive 22 is cured. The resin injection process in FIG. 7C and the mold release process in FIG. 7D correspond to the resin injection process in FIG. 3D and the mold release process in FIG. Furthermore, also in the present embodiment, after the mold release step, a protective treatment step is performed in which the wiring exposed portion on one surface of the insulating resin layer 11 is covered with the protective layer 14 for protection.

  According to the wiring structure 1 ″ according to the third embodiment of the present invention, the semiconductor chip 21 (corresponding to a predetermined functional component) is embedded in the insulating resin layer 11, and the wiring metal layers 12, 13, It has a configuration in which any one of the wirings formed of the protective layer 14 (corresponding to any of a plurality of wirings forming a wiring pattern) is connected to the semiconductor chip 21. This configuration is described in claims 6 and 9. According to this configuration, the functional component is included in the wiring structure, so that the device including the functional component can be downsized.

  In the above-described embodiment, the wiring metal layers 12 and 13 are laminated on the mold 18, the semiconductor chip 21 is bonded, the resin is injected, and then molded and released. In the present invention, the insulating film 17 covering the mold 18 is etched into a wiring pattern, and then the wiring metal layers 12 and 13 are formed. Even if the protective layer 14 is formed before the formation, and then the wiring metal layers 12 and 13 are formed on the protective layer 14 and the semiconductor chip 21 is bonded, the same effect can be obtained.

  Here, a third embodiment of the present invention will be described.

In the third example, the first example was applied, and plating was performed in the order of Cu and Ni (corresponding to 12 and 13 in FIG. 7) in a pattern. An epoxy conductive adhesive (corresponding to 22 in FIG. 7) is supplied to the connecting terminal portion (corresponding to 12 and 13 in FIG. 7) of the plated mold (corresponding to 18 in FIG. 7) by dispensing. Thereafter, the semiconductor chip (corresponding to 21 in FIG. 7) as a functional component is connected to the wiring pattern (corresponding to 12 and 13 in FIG. 7) via an epoxy-based conductive adhesive. The epoxy conductive adhesive was cured at 150 ° C. for 1 hour. Furthermore, by applying transfer molding and releasing by applying the first embodiment, the semiconductor chip is sealed in the three-dimensional molded body, and a copper wiring (in a pattern) is formed on one surface (front surface) of the three-dimensional molded body. A three-dimensional molded body in which (corresponding to 13 in FIG. 7) was exposed could be formed.
In this embodiment, the connection material (corresponding to 22 in FIG. 7) was supplied by dispensing. However, for example, a method of supplying solder onto the wiring or functional component by plating, or solder bumps were mounted. A method of mounting functional parts may be used.

It is sectional drawing of the wiring structure which concerns on the 1st Embodiment of this invention. It is a partial expanded sectional view of the wiring structure which concerns on the 1st Embodiment of this invention. It is a figure which shows the manufacturing method of the wiring structure which concerns on the 1st Embodiment of this invention. It is sectional drawing of the wiring structure which concerns on the 2nd Embodiment of this invention. It is a figure which shows the manufacturing method of the wiring structure which concerns on the 2nd Embodiment of this invention. It is sectional drawing of the wiring structure which concerns on the 3rd Embodiment of this invention. It is a figure which shows the manufacturing method of the wiring structure which concerns on the 3rd Embodiment of this invention.

Explanation of symbols

1, 1 ′, 1 ″ wiring structure 11 insulating resin layer 12 first wiring metal layer 13 second wiring metal layer 14 protective layer 15 recess 16 laser processing apparatus 17 DLC
18 Mold 19 Mold 20 Mold 21 Semiconductor chip 22 Conductive adhesive

Claims (9)

In a configuration provided with a resin layer in which a predetermined wiring pattern is formed on one surface, and a patterned wiring embedded in the resin layer,
The wiring includes two or more wiring layers including a first wiring layer forming an interface with the resin layer and a second wiring layer partially protruding on one surface of the resin layer,
A wiring structure, wherein the resin of the resin layer enters a recess formed in the interface, and the first wiring layer and the resin layer are bonded to each other. The wiring structure according to claim 1,
Any one or more of the two or more wiring layers are exposed on one surface of the resin layer. The wiring structure according to claim 1,
A wiring structure characterized in that the first wiring layer is made of Cu and the second wiring layer is made of Ni. The wiring structure according to claim 3,
A wiring structure, wherein a wiring exposed surface of a wiring pattern formed on one surface of the resin layer is covered with a coating made of Au. The wiring structure according to claim 1,
A wiring structure, wherein the wiring pattern is formed from one surface of the resin layer to another surface. The wiring structure according to claim 1,
A wiring structure comprising: a predetermined functional component embedded in the resin layer, and the predetermined functional component connected to any of a plurality of wires forming the wiring pattern. A mold forming step of covering a region other than a predetermined wiring pattern region on the upper surface of the first mold with an insulating film; a wiring step of forming a wiring by laminating a plurality of wiring layers for each wiring material in the wiring pattern region; A roughening step for roughening the uppermost wiring layer of a plurality of laminated wiring layers, and a first mold on which the wiring is formed is covered with a second mold to insulate the mold. A resin injection step of injecting a resin and molding an insulating resin layer in which the wiring is embedded; and a first and second molds and a molded body in which a wiring pattern is transferred to one surface of the insulating resin layer; A mold release step for separating the insulating film,
In the resin injecting step, the insulating resin penetrates into the concave portion of the uppermost wiring layer roughened in the roughening step, and in the releasing step, a plurality of wiring layers stacked in the wiring step are formed. The lowermost wiring layer protrudes from one surface of the resin layer. In the manufacturing method of the wiring structure according to claim 7,
In the mold forming step, an area other than the predetermined wiring pattern area extending over the plurality of surfaces on the first mold is covered with an insulating film, and in the mold releasing step, the area extending over the plurality of surfaces of the insulating resin layer. The first and second molds and the insulating film are separated from the molded body to which the wiring pattern is transferred, and the lowermost wiring layer of the wiring layers laminated in the wiring process has a plurality of surfaces of the resin layer. A method for manufacturing a wiring structure, wherein the wiring structure protrudes from the wiring. In the manufacturing method of the wiring structure according to claim 7,
A method of manufacturing a wiring structure comprising a component mounting step of connecting a wiring formed by laminating a plurality of wiring layers for each wiring material and a predetermined functional component before the resin injection step.

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