JP2007248475A - 平坦度の測定方法及び装置 - Google Patents
平坦度の測定方法及び装置 Download PDFInfo
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- JP2007248475A JP2007248475A JP2007131757A JP2007131757A JP2007248475A JP 2007248475 A JP2007248475 A JP 2007248475A JP 2007131757 A JP2007131757 A JP 2007131757A JP 2007131757 A JP2007131757 A JP 2007131757A JP 2007248475 A JP2007248475 A JP 2007248475A
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- 238000000034 method Methods 0.000 title claims description 41
- 238000000411 transmission spectrum Methods 0.000 claims abstract description 31
- 238000001228 spectrum Methods 0.000 claims abstract description 8
- 238000000691 measurement method Methods 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 3
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- 239000010409 thin film Substances 0.000 abstract description 57
- 238000005259 measurement Methods 0.000 abstract description 42
- 238000002834 transmittance Methods 0.000 abstract description 24
- 230000003287 optical effect Effects 0.000 abstract description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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Abstract
【解決手段】平行平板状の基板の透過スペクトルは、フリンジのピーク周波数では入射角度に依らず、透過率は一定で最大値をとるが、その周辺周波数では、入射角度を増加させると透過率はゼロに近づく。この基板に薄膜を載せて厚さを増加させると、フリンジのピーク周波数は低周波側にずれる。これら3つの効果のために、高入射角度で基板のみの透過スペクトルに対する基板と薄膜からなる系の透過スペクトルの比のスペクトルは、最大値と最小値が隣接した構造のスペクトルになり、薄膜の複素誘電率が求まる。さらに、基板上で光の照射位置を移動させながら同様の測定をして、基準位置の透過スペクトルとの比のスペクトルに前述の構造が表れれば、そのスペクトルから基板の平坦度が求まる。
【選択図】図1
Description
図1は、複素誘電率測定装置10の配置図である。光源12(この図ではミリ波後進波管(BWO))を出たCW光はメカニカルチョッパ14で強度変調をうける。レンズ15とアパーチャー16を通過した光は平面波になる。試料11の前面でレンズ17とアパーチャー18で試料面上に集光する。この入射系30に必要に応じてポーラライザー(この図では省略)と光パワーの減衰器(この図では省略)を入れる。試料を透過した光のみをレンズ19とアパーチャー20で受信して平面波にする。この光をレンズ21とアパーチャー22で受けて検出器(この図ではゴーレーセル)に集光する。光の強度信号は検出器で電気信号に変換されて計測器(この図では省略)に送られる。試料から検出器までを受光系31と呼ぶことにする。光源、試料、検出器等は、ほぼ一直線上に並んでいる。この光の進行方向をz軸にとる。光源は試料への光の入射位置を任意に変えるために、x−y自動ステージ(この図では省略)に載せてある。試料は入射角度を変えるために、自動回転ステージ(この図では省略)に載せてあり、垂直軸(y軸)の回りに自由に回転できる。検出器は最適の位置に設置できるように、x−y−z自動ステージ(この図では省略)と自動回転ステージ(この図では省略)に載せてある。試料ホルダー(この図では省略)は斜入射でも入射光を遮蔽しないように工夫をしてあり、さらに試料を透過しない光が受光系に入射することを避けるために、試料ホルダーには電波吸収体(この図では省略)を取り付けてある。試料に平行光線を入射させるときには、レンズ17と19は使わない。
11 試料
12 光源
13 検出器
14 メカニカルチョッパ
15、17、19、21 レンズ
16、18、20、22 アパーチャー
30 入射系
31 受光系
Claims (4)
- 試料の平坦度測定装置において、該試料は、平板であり、該測定装置は、該回転装置及び光源を有し、該回転装置は、該試料の中心を軸として、該試料を回転できるように該試料を支持しており、該光源は、該試料の面に斜めより光を照射できるように設けられており、種々の回転角度において透過光のスペクトルを求め、該試料の平坦度を求めることを特徴とする試料の平坦度測定装置。
- 試料の平坦度測定方法であって、該試料は、平板であり、該試料は、該試料の中心を軸として回転可能に支持されており、該試料の面に斜めより光が照射され、特定の回転角度において測定された透過光の透過スペクトルを該特定の回転角度から180度回転した角度において測定された透過光の透過スペクトルにより割算することにより相対透過スペクトルを求める操作を種々の回転角度において繰り返すことにより、該試料の平坦度を求めることを特徴とする試料の平坦度測定方法。
- 請求項2に記載の試料の平坦度測定方法において、一様な誘電率の試料への入射光の位置を該試料面上で変化させながら上記相対透過スペクトルを求め、基準の位置の該相対透過スペクトルと比較することにより該試料の平坦度を求めることを特徴とする試料の平坦度測定方法。
- 請求項3に記載の試料の平坦度測定方法において、上記試料への上記入射光の入射角度を60度から85度に設定することにより、該試料の平坦度を求めることを特徴とする試料の平坦度測定方法。
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JP2007131757A JP4528952B2 (ja) | 2007-05-17 | 2007-05-17 | 平坦度の測定方法及び装置 |
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JP2003391201A Division JP4006525B2 (ja) | 2003-11-20 | 2003-11-20 | 光の透過測定による試料の平坦度と複素誘電率測定装置及び測定法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010038809A (ja) * | 2008-08-07 | 2010-02-18 | Murata Mfg Co Ltd | テラヘルツ分光装置 |
WO2011108462A1 (ja) * | 2010-03-01 | 2011-09-09 | 東京エレクトロン株式会社 | 物性測定装置、物性測定方法、薄膜基板製造システム及びプログラム |
KR20160005207A (ko) * | 2014-07-04 | 2016-01-14 | (주)유니젯 | 실드캔의 평탄도 검사장치 및 검사방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111405A (en) * | 1980-02-06 | 1981-09-03 | Unitika Ltd | Method and device for measuring thickness of transparent film |
JPS58160804A (ja) * | 1982-03-19 | 1983-09-24 | Hitachi Ltd | 透明円板の厚みムラ測定装置 |
WO2005050177A1 (ja) * | 2003-11-20 | 2005-06-02 | National Institute Of Advanced Industrial Science And Technology | 光学スペクトルの測定による試料の複素誘電率測定方法及び測定装置 |
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2007
- 2007-05-17 JP JP2007131757A patent/JP4528952B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111405A (en) * | 1980-02-06 | 1981-09-03 | Unitika Ltd | Method and device for measuring thickness of transparent film |
JPS58160804A (ja) * | 1982-03-19 | 1983-09-24 | Hitachi Ltd | 透明円板の厚みムラ測定装置 |
WO2005050177A1 (ja) * | 2003-11-20 | 2005-06-02 | National Institute Of Advanced Industrial Science And Technology | 光学スペクトルの測定による試料の複素誘電率測定方法及び測定装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010038809A (ja) * | 2008-08-07 | 2010-02-18 | Murata Mfg Co Ltd | テラヘルツ分光装置 |
WO2011108462A1 (ja) * | 2010-03-01 | 2011-09-09 | 東京エレクトロン株式会社 | 物性測定装置、物性測定方法、薄膜基板製造システム及びプログラム |
JP2011179971A (ja) * | 2010-03-01 | 2011-09-15 | Tokyo Electron Ltd | 物性測定装置、物性測定方法、薄膜基板製造システム及びプログラム |
KR20160005207A (ko) * | 2014-07-04 | 2016-01-14 | (주)유니젯 | 실드캔의 평탄도 검사장치 및 검사방법 |
KR101604356B1 (ko) | 2014-07-04 | 2016-03-28 | (주)유니젯 | 실드캔의 평탄도 검사장치 및 검사방법 |
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