JP4235826B2 - 光の反射測定による試料の複素誘電率測定方法 - Google Patents
光の反射測定による試料の複素誘電率測定方法 Download PDFInfo
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- JP4235826B2 JP4235826B2 JP2004311458A JP2004311458A JP4235826B2 JP 4235826 B2 JP4235826 B2 JP 4235826B2 JP 2004311458 A JP2004311458 A JP 2004311458A JP 2004311458 A JP2004311458 A JP 2004311458A JP 4235826 B2 JP4235826 B2 JP 4235826B2
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- thin film
- substrate
- dielectric constant
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- 238000005259 measurement Methods 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 32
- 239000010409 thin film Substances 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 75
- 238000000985 reflectance spectrum Methods 0.000 claims description 24
- 230000008033 biological extinction Effects 0.000 claims description 10
- 238000000691 measurement method Methods 0.000 claims description 10
- 238000006073 displacement reaction Methods 0.000 claims description 6
- 239000000523 sample Substances 0.000 description 44
- 238000001228 spectrum Methods 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000004364 calculation method Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000001066 destructive effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000013074 reference sample Substances 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000012356 Product development Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
(表1) ピークの変位量Δνとフリンジのピーク間隔νsの入射角度依存性
Low-k薄膜が有る時と無い時で、ボトム位置が、1フリンジの中で最大約0.078%(=Δν/νs=−0.04916/63.02520)しか低周波数側へ変位しない。このために各々の試料の反射スペクトルを測定しても、ボトム周波数の変移量を検出できず、このままではLow-k薄膜の複素誘電率を求めることができない。
表1の計算では、シリコンの複素屈折率の実数部が有限の値(ns=3.4)で、虚数部をゼロ(k=0)としているので、反射スペクトルのボトムでは反射率は0%になっている。さらに、表1の第3行目(νs)は、フリンジのボトム間隔であるが、(数1)からもわかるように、これらの値は、(数1)で最初に現れるフリンジのボトム位置(N=1)の周波数でもある。
図1は、複素誘電率測定装置10の配置図である。光源12を出たCW光はメカニカルチョッパ14で強度変調をうける。レンズ15とアパーチャー16を通過した光は平面波になる。試料11の前面でレンズ17とアパーチャー18で試料面上に集光する。この入射系30に必要に応じてポーラライザーと光パワー減衰器(この図の23)を入れる。試料を反射した光のみをアパーチャー19とレンズ20で受信して平面波にする。この光をアパーチャー21とレンズ22で受けて検出器13に集光する。光の強度信号は検出器で電気信号に変換されて計測器(この図では省略)に送られる。試料から検出器までを受光系31と呼ぶことにする。試料は試料への光の入射位置を任意に変えるために、x−y自動ステージ(この図では省略)に載せてある。さらに試料は入射角度を変えるために、自動回転ステージ(この図では省略)に載せてあり、垂直軸(y軸)の回りに自由に回転できる。検出器は最適の位置に設置できるように、x−y−z自動ステージ(この図では省略)と自動回転ステージ(この図では省略)に載せてある。試料ホルダー(この図では省略)は斜入射でも入射光を遮蔽しないように工夫をしてあり、さらに試料ホルダーで反射した光が受光系に入射することを避けるために、試料ホルダーには電波吸収体(この図では省略)を取り付けてある。試料に平行光線を入射させるときには、レンズ17と20は使わない。
11 試料
12 光源
13 検出器
14 メカニカルチョッパ
15,17, 20,22 レンズ
16,18, 19,21 アパーチャー
23 ポーラライザー/光パワー減衰器
30 入射系
31 受光系
Claims (4)
- 薄膜試料の誘電率測定方法において、基板及び該基板上に設けられた該薄膜試料に光を照射し、それぞれの反射光に生じる絶対反射率スペクトルのボトム位置の変位量を求め、該変位量に基づき上記薄膜試料の複素屈折率の実数部を求め、該実数部と上記薄膜試料の消衰係数とから上記薄膜試料の複素誘電率を求めることを特徴とする薄膜試料の誘電率測定方法。
- 上記試料は、一様な誘電率で一様な厚さの基板及び該基板の一部に薄膜試料が設けられていることを特徴とする請求項1に記載の薄膜試料の誘電率測定方法。
- 上記照射する光は、S偏光であることを特徴とする請求項1又は2のいずれかに記載の薄膜試料の誘電率測定方法。
- 上記照射する光は、ミリ波、テラヘルツ光、赤外光又は可視光であることを特徴とする請求項1から3のいずれかに記載の薄膜試料の誘電率測定方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004311458A JP4235826B2 (ja) | 2004-10-26 | 2004-10-26 | 光の反射測定による試料の複素誘電率測定方法 |
US10/579,781 US7649633B2 (en) | 2003-11-20 | 2004-11-22 | Method and instrument for measuring complex dielectric constant of a sample by optical spectral measurement |
PCT/JP2004/017361 WO2005050177A1 (ja) | 2003-11-20 | 2004-11-22 | 光学スペクトルの測定による試料の複素誘電率測定方法及び測定装置 |
GB0612243A GB2425592B (en) | 2003-11-20 | 2004-11-22 | Method and instrument for measuring complex dielectric constant of sample by optical spectrum measurement |
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JP2004311458A JP4235826B2 (ja) | 2004-10-26 | 2004-10-26 | 光の反射測定による試料の複素誘電率測定方法 |
Publications (2)
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JP2006125888A JP2006125888A (ja) | 2006-05-18 |
JP4235826B2 true JP4235826B2 (ja) | 2009-03-11 |
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JP2004311458A Expired - Fee Related JP4235826B2 (ja) | 2003-11-20 | 2004-10-26 | 光の反射測定による試料の複素誘電率測定方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010038809A (ja) * | 2008-08-07 | 2010-02-18 | Murata Mfg Co Ltd | テラヘルツ分光装置 |
JP6367753B2 (ja) * | 2015-05-11 | 2018-08-01 | 日本電信電話株式会社 | 誘電分光センサ |
EP3745144A1 (en) * | 2019-05-29 | 2020-12-02 | ALCAN Systems GmbH | A method of inspecting a radio frequency device and a radio frequency device |
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