JP2007245638A - Manufacturing method of inkjet recording head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an inkjet recording head which improves a yield through a rapid decrease of the probability of cracking of an etching stopping layer during the formation of an ink supply port using anisotropic etching and permitting high definition printing. <P>SOLUTION: The inkjet recording head manufacturing method restrains membrane cracking by reducing damage given to a membrane by an etching solution by reducing an etching rate in an anisotropic etching process in a final etching phase by varying the temperature or the concentration of the etching solution. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an inkjet recording head that discharges a desired liquid by applying energy to the liquid from the outside, and a method for manufacturing the inkjet recording head.

  There is known an ink jet recording method in which the generation of bubbles is promoted by applying energy such as heat to the ink, the ink is ejected from the ejection port using this volume change, and this is deposited on the recording medium to form an image. It has been. Among ink jet systems, a side shooter type (Japanese Patent Laid-Open No. 9-011479) that ejects ink perpendicular to a substrate has been proposed. In addition, as a method of manufacturing this head, a method (Japanese Patent Laid-Open No. 10-181032) for forming a shape of an ink supply port using a sacrificial layer is disclosed.

This is a material in which a silicon oxide film or a silicon nitride film is formed on a silicon substrate, an ink discharge pressure generating element is formed on the silicon oxide film or the silicon nitride film, and the silicon substrate surface is susceptible to etching liquid. Depositing a thin film to form a pattern (etching sacrificial layer) in the shape of an ink supply port, further forming an etching stop layer on the pattern in the shape of the supply port, and forming an ink discharge port on the surface of the silicon substrate; An opening is provided on the back surface of the silicon oxide film or silicon nitride film forming surface, the silicon serving as the ink supply port is removed by anisotropic etching, and the silicon oxide film of the etching stop layer remaining in the ink supply port or It has been formed by a process of removing the silicon nitride film or a mixture thereof.
Japanese Patent Laid-Open No. 9-11479 Japanese Patent Laid-Open No. 10-181032

  In conventional ink jet recording heads, etching is performed by immersing in an alkaline etchant controlled at a constant concentration and temperature when opening a through-hole for supplying ink to a silicon substrate by anisotropic etching. The speed was almost constant from start to finish.

  Since the SiN film serving as an etching stop layer is slightly eroded by an alkaline etching solution, the film is cracked when exposed to a strong etching solution that has etched a thick silicon substrate at a high rate, and etching is performed as shown in FIG. There was a problem that alkali penetrates into the organic resin nozzle forming material above the stop layer and the shape is destroyed.

  A step of forming an insulating film such as a silicon oxide film or a silicon nitride film on the silicon substrate as a livestock heat layer, a step of forming an ink discharge pressure generating element on the film, and a material susceptible to etching liquid on the surface of the silicon substrate. Depositing a thin film and forming a pattern in the shape of the ink supply port, forming a silicon oxide film, a silicon nitride film or a mixture thereof on the supply port shape pattern, the silicon oxide film or A step of providing an opening on the back surface on which the silicon nitride film is formed, and removing silicon at a portion serving as an ink supply port by anisotropic etching, a silicon oxide film or a silicon nitride film of an etching stop layer remaining at the ink supply port Or manufacturing an ink jet recording head including at least a step of removing the mixture A method, by changing the etching rate of the silicon substrate by anisotropic etching with etching the initial and the through immediately before film cracking in the etching stop layer becomes possible prevention.

[Action]
Immediately before penetrating the Si substrate by anisotropic etching, if the temperature of the etching solution is lowered or the concentration of TMAH is increased, the probability of the membrane film being eroded and causing film cracking is greatly reduced. This is because the etching rate of the etching solution is lowered and the corrosiveness to the membrane film is also lowered by the operation as described above, and therefore, the probability that the step portion that is particularly corroded in the membrane film is destroyed is lowered.

  As described above, according to the present invention, anisotropic etching is used by changing the etchant temperature or the etchant concentration during anisotropic etching to slow the etching rate at the final stage of etching. In addition, the probability of cracking of the etching stop layer when the ink supply port is formed can be drastically reduced, yield can be improved, and an ink jet recording head capable of high-quality printing can be provided.

[Experiment 1]
Hereinafter, experiments related to the present invention will be described. FIG. 3 shows a cross-sectional structure of a sample used in the experiment. A sacrificial layer 102 was formed by depositing 3000 Å of an AlCu film on the surface of a 5-inch Φ, 625 μm thick Si (100) wafer 101 and patterning it as shown in the plan view 5. The shape of the sacrificial layer was a rectangle with a width of 150 μm and a length of 10 mm. An etching stop layer 103 was formed by depositing 8000 SiN film by plasma CVD thereon. The deposition conditions for the SiN film at this time were SiH 4 / NH 3 / N 2 = 500/1500/6300 sccm, pressure 150 mtorr, substrate temperature 380 ° C., and RF 1700 W. The film stress measured with a single film was 1.5 × 10 exp-9 dyne / cm. On the back surface of the substrate, an anisotropic etching pattern is formed by patterning a thermal oxide film as shown in the plan view of FIG. An alkali resistant resist (OBC, manufactured by Tokyo Ohka Kogyo Co., Ltd.) 104 is applied to the substrate surface.

  This sample was immersed in tetramethylammonium hydride (TMAH), and silicon was anisotropically etched from the back surface. Etching conditions were TMAH / H 2 O = 21%, and the liquid temperature was changed from 70 to 90 ° C. Then, as shown in FIG. 4, the hole opened in the silicon finally reaches the sacrificial layer, etches the sacrificial layer, and stops at the etching stop layer.

  FIG. 7 shows the relationship between the temperature of the etching solution and the probability of occurrence of cracks in the etching stop layer. It can be seen that when the liquid temperature is 80 ° C. or lower, the probability of occurrence of cracks sharply decreases.

  On the other hand, FIG. 8 shows the relationship between the temperature of the etching solution and the etching time (time required for substrate penetration). It can be seen that the etching time becomes longer as the liquid temperature decreases. Moreover, the phenomenon that the etching surface becomes rough was observed when the liquid temperature was 86 ° C. or higher.

[Experiment 2]
Using the same substrate as in Experiment 1, the liquid temperature was fixed at 83 ° C., and the TMAH / H 2 O concentration was changed from 20 to 26% to perform an etching experiment.

  FIG. 9 shows the relationship between the concentration of the etching solution and the probability of occurrence of cracks in the etching stop layer. It can be seen that the probability of cracking rapidly decreases as the liquid concentration increases.

  On the other hand, FIG. 10 shows the relationship between the concentration of the etchant and the etching time (time required for substrate penetration). It can be seen that as the TMAH concentration increases, the etching time increases. Moreover, the phenomenon that the etching surface becomes rough was observed when the liquid concentration was 18% or less.

[Example Embodiment]
FIGS. 1A to 1C are schematic views showing an anisotropic etching process in the process of manufacturing an ink jet recording head showing an embodiment according to the present invention.

  As the substrate, a (100) or (110) Si wafer is used. A film easily etched by TMAH was deposited on the surface of the wafer and patterned to form a sacrificial layer 203. The planar shape of the sacrificial layer is a rectangular shape as shown in FIG. 5 for the Si (100) substrate, and a parallelogram with a narrow angle of 70.5 degrees as shown in FIG. 11 for the Si (110) substrate. .

  An etching stop layer 206 was formed by depositing a thin film thereon by sputtering, vapor deposition, or plasma CVD. A heater 207, wiring 206, and the like are disposed adjacent to the sacrificial layer. Further, an ink flow path forming resin 210, a nozzle forming resin 208, and the like are disposed, and a protective film 211 against alkali etching is applied to the uppermost layer.

  Further, an etching pattern 212 obtained by patterning an alkali-resistant film is formed on the back surface of the substrate, and an ink supply port is formed by opening a through hole toward the sacrificial layer on the surface by anisotropic etching.

  Anisotropic etching is performed by immersing in an etching solution containing TMAH, and when etching proceeds to the vicinity of the sacrificial layer as shown in FIG. 1 (b), the etching conditions are changed to lower the etching solution temperature, or The TMAH concentration is increased to lower the etching rate, thereby suppressing damage to the etching stop layer. By this operation, the crack generation probability of the etching stop layer is significantly reduced.

  Next, the process of the ink jet recording nozzle according to the present invention will be described step by step with reference to FIGS.

  (1) An insulating film 302 is formed on a silicon substrate 301 having a substrate surface orientation (110) by, for example, thermal oxidation or CVD, and a desired pattern 303 for forming an ink supply port is formed by photolithography.

  (2) A metal having a low resistance such as Al or Cu and a high etching rate for an etchant for anisotropic etching such as TMAH (tetra-methyl-ammonium hydride) is deposited and patterned to form the lower wiring 304 and the sacrificial layer 305. Form. The etching sacrificial layer is an etching rate that is much faster than the Si wafer when etching proceeds from the back surface and the etchant reaches the sacrificial layer, so that etching can be performed in a short time and an opening corresponding to the sacrificial layer pattern can be opened. is there. The pattern at this time is a parallelogram having a narrow angle of 70.5 degrees as shown in FIG. 11 so that an etching hole is perpendicular to the substrate. The long side and the short side of the parallelogram are (111) To be parallel to the equivalent plane.

  (3) An SiN or SiON film is deposited as an etching stop layer 306 on the substrate surface by plasma CVD. As the etching stop layer, two or more kinds of films may be laminated in order to adjust the film stress.

  The total thickness of the laminated etching stop film is generally 2000-2 μm, preferably 3000-15000 mm, and most preferably 4000-13000 mm. The total stress of the laminated etching stop film is generally 2 × 10 exp-9 dyne / cm 2 or less, more preferably 1.8 × 10 exp-9 dyne / cm 2 or less, and most preferably 1.5 × 10 exp-9 dyne / cm 2. It is as follows.

  (4) A film such as SiN, SiON, or SiO 2 is deposited by plasma CVD or the like to form the interlayer insulating film 307. Further, a contact hole 308 is formed in the interlayer insulating film.

  (5) A heater unit 309 is formed as an ink discharge pressure generating element in accordance with the ink supply port. As the heater material, a metal film such as Ta, TaN, TaNSi or the like is deposited and patterned by sputtering, vacuum evaporation or the like. Further, a metal film of Al, Mo, Ni, Cu or the like is formed in the same manner as the upper layer electrode 310 for supplying power.

  (6) A SiN film 311 is deposited on the heater by plasma CVD for the purpose of improving durability to form a protective film.

  (7) On this, Ta is deposited and patterned as a cavitation resistant film 312 by a sputtering method or the like.

  Needless to say, there is no particular limitation on the order of forming the wiring and the heater.

  (8) A resin film 313 having high corrosion resistance is formed in order to increase the adhesion of the resin nozzle and to protect the back surface from the alkaline etchant. Then, the heater part and the ink supply port part are patterned.

  (9) In order to secure the ink flow path, the pattern 315 is formed of a resin that can be dissolved in a strong alkali or an organic solvent. This pattern is formed by a printing method or patterning with a photosensitive resin.

  (10) A coating resin layer 316 is formed on the ink flow path pattern. Since this coating resin layer forms a fine pattern, a photosensitive resist is desirable, and further, the coating resin layer must have a property of not being deformed and altered by an alkali, a solvent, or the like when the resin layer having the flow path is removed.

  (11) Next, the coating resin layer of the flow path is patterned to form the ink discharge port 317 corresponding to the heater portion and the external connection portion of the electrode. Thereafter, the coating resin layer is cured by light or heat.

  (12) A protective film 318 is formed with a resist to protect the nozzle forming surface side of the substrate.

  (13) Using the photolithographic technique, the back surface of the ink supply port pattern portion 319 is removed to expose the wafer surface. The pattern is formed so as to have a mirror image relationship with the sacrificial layer. The manufacturing method of the etching mask film on the back surface is not limited to plasma CVD, but may be LPCVD, atmospheric pressure CVD, thermal oxidation, or the like.

  (14) Next, an etching leading hole 320 is opened in the narrow-angle vicinity of the back side of the parallelogram (back side plan view 45). Generally, laser machining or the like is used, but electric discharge machining, blasting, or the like may be used.

  This lead hole can be as close as possible to the etching stop layer. The depth of the leading hole is generally 60% or more of the substrate thickness, preferably 70% or more, and optimally 80% or more. Also, it must not penetrate the substrate. By this leading hole, the oblique (111) plane generated from the narrow angle of the parallelogram is suppressed.

  (15) The substrate is immersed in an alkaline etchant (KOH, TMAH, hydrazine, etc.) and anisotropically etched so that the (111) plane appears. At this time, as shown in FIG. 25, when the etching proceeds to the vicinity of the sacrificial layer, the etching layer is moved and the etching conditions are changed to lower the etching solution temperature, or the TMAH concentration is increased to lower the etching rate.

  At this time, the etching condition is basically changed in two steps, but it may be divided into more stages. Of course, it may be performed continuously.

  (16) As shown in FIG. 26, the sacrificial layer is etched at a low etching rate.

  (17) Further, the SiN film or the like of the etching stop layer 306 is partially removed by a chemical solution such as hydrofluoric acid or dry etching to open the ink supply port. Finally, the ink flow path forming material 315 is removed to secure the ink flow path 324.

  In the above process, the substrate processing procedure is not particularly limited, and can be arbitrarily selected.

  The manufacturing method of the ink jet recording head of the present invention will be described step by step with reference to FIGS.

  As shown in FIG. 30, a (100) -plane Si wafer 401 having a thickness of 630 μm and a thickness of 5 inches was thermally oxidized to form a SiO 2 layer 402 having a thickness of 10,000 mm. Next, the supply port opening 403 was formed by patterning SiO2. 3000 μm of AlCu film was deposited with a sputter. A sacrificial layer 404 and a lower layer electrode wiring 405 were formed by patterning as shown in FIG. The width of the sacrificial layer was 120 μm, and the long side direction was 15 mm.

  As a film that doubles as an etching stop layer and an interlayer insulating film, a SiN film 406 was deposited by plasma CVD as shown in FIG. The film formation conditions were SiH 4 / NH 3 / N 2 = 160/400/2000 sccm, pressure 1600 mtorr, substrate temperature 300 ° C., and RF 1400 W. Further, 3000 SiN films 407 were deposited by plasma CVD under different conditions. The film formation conditions were SiH 4 / NH 3 / N 2 = 100/500/3500 sccm, pressure 1300 mtorr, substrate temperature 300 ° C., and RF 1100 W.

  Using a photolithography technique, a contact hole 408 was formed in the interlayer insulating film as shown in FIG.

  Further, the upper wiring electrode 409 and the heater 410 are formed by sputtering and patterning by continuously forming 500 N of TaN and 3000 N of Al.

  As a photosensitive resin, polymethylisopropenyl ketone (Tokyo Ohka ODUR-1010) was applied by 20 μm and patterned to form an ink flow path mold 411 as shown in FIG. Further, a photosensitive resin layer 412 shown in Table 1 was applied to a thickness of 12 μm and patterned to form ink discharge ports 413 as shown in FIG.

ノズル形成面側を保護するために、ゴム系レジスト（東京応化製 ＯＢＣ）で保護膜４１４を形成した。ノズルの裏面側のＳｉＯ２をパターニングして、裏面インク供給口４１５を形成した。このパターンは、幅６２０μｍ長さ１６ｍｍの長方形とした。

In order to protect the nozzle forming surface side, a protective film 414 was formed with a rubber-based resist (OBC manufactured by Tokyo Ohka Kogyo Co., Ltd.). The backside ink supply port 415 was formed by patterning the SiO2 on the backside of the nozzle. This pattern was a rectangle having a width of 620 μm and a length of 16 mm.

  This substrate was immersed in 20% TMAH aqueous solution and anisotropically etched. In the first stage etching, the etchant temperature was 83 ° C. and the etching time was 15 hours 30 minutes. This was 95% of the time for just etching the thickness of the substrate of 630 μm. The etching stopped before the sacrificial layer as shown in FIG.

  Here, the etching tank was changed to make a TMAH aqueous solution having an etching solution concentration of 25%, and etching was further performed for 1 hour 30 minutes. The etching proceeds to the Al sacrificial layer as shown in FIG. 41 and stops in front of the etching stop layer 406. At this time, there was no crack in the etching stop layer, and no penetration of the etching solution into the flow path forming resin layer 411 or the nozzle portion 412 was observed.

  Next, as shown in FIG. 42, SiN in the etching stop layer was removed by the CDE method. Etching conditions were CF 4 / O 2 / N 2 = 300/250/5 sccm, RF 800 W, and pressure 250 mtorr.

  As shown in FIG. 43, ultrasonic waves were applied in methyl lactate to remove the resin 411, and the ink flow path 416 was formed. Finally, as shown in FIG. 44, after being immersed in methyl isobutyl ketone, the protective film was removed by applying ultrasonic waves in xylene to complete the ink jet recording head.

  Using this ink jet recording head, a printing test was performed at an ejection frequency of 15 KHz. A high-quality printed matter free from printing blur, density unevenness, and non-ejection of ink was obtained over the entire 15 mm width.

[Comparative Example 1]
Below, the comparative example of this invention is demonstrated.

  The configuration and formation method of the heater, electrode, nozzle and the like were the same as in Example 1, and the anisotropic etching was performed using only an etching solution of TMAH 20% and the etching time was 16 hours.

  All subsequent steps were the same as in Example 1.

  Using this ink jet recording head, a print test was performed at an ejection frequency of 15 KHz, but there were white spots where ink was not ejected. When the head was observed, a part of the resin nozzle was found after alkali erosion, which seems to be caused by cracks in the etching stop layer.

  Hereinafter, another method of manufacturing the ink jet recording head according to the present invention will be described step by step with reference to FIGS.

  As shown in FIG. 12, a (110) -plane Si wafer 301 having a thickness of 630 μm and a 5-inch diameter was thermally oxidized to form a SiO 2 layer 302 having a thickness of 10000 mm. Next, the supply port opening 303 was formed by patterning SiO2. 3000 μm of AlCu film was deposited with a sputter. The sacrificial layer 305 and the lower layer electrode wiring 304 were formed by patterning as shown in FIG. The width of the sacrificial layer was 120 μm, and the long side direction was 15 mm.

  As a film that doubles as an etching stop layer and an interlayer insulating film, a SiN film 306 was deposited by plasma CVD as shown in FIG. The film formation conditions were SiH 4 / NH 3 / N 2 = 160/400/2000 sccm, pressure 1600 mtorr, substrate temperature 300 ° C., and RF 1400 W.

  Further, 7000 mm of SiN film 307 was deposited by plasma CVD under different conditions. The film formation conditions were SiH 4 / NH 3 / N 2 = 100/500/3500 sccm, pressure 1300 mtorr, substrate temperature 300 ° C., and RF 1100 W.

  Using a photolithographic technique, a contact hole 308 was formed in the interlayer insulating film as shown in FIG.

  Further, the upper layer wiring electrode 310 and the heater 309 are formed by sputtering and patterning by continuously forming 500 N of TaN and 3000 N of Al.

  Next, 3000 nm of plasma CVD SiN was deposited and patterned as the heater protection film 311. The film formation conditions were SiH 4 / NH 3 / N 2 = 180/480/2000 sccm, pressure 1500 mtorr, substrate temperature 320 ° C., and RF 1700 W.

  Further, in order to protect the heater from cavitation due to ink bubbling, 2300 liters of Ta was deposited and patterned by sputtering to form a cavitation resistant film 312.

  In order to increase the adhesion of the resin nozzle and to protect the back surface from the alkali etchant, a polyetheramide resin film (HIMAL manufactured by Hitachi Chemical Co.) 313 having high corrosion resistance was applied and baked to form 2 μm. Thus, the heater part and the ink supply port part were exposed by patterning.

  20 μm of polymethyl isopropenyl ketone (Tokyo Ohka ODUR-1010) was applied as a photosensitive resin and patterned to form an ink flow path mold 315 as shown in FIG. Further, a photosensitive resin layer 316 shown in Table 1 was applied to a thickness of 12 μm and patterned to form an ink discharge port 317 as shown in FIG.

  In order to protect the nozzle forming surface side, a protective film 318 was formed with a rubber resist (OBC manufactured by Tokyo Ohka Kogyo Co., Ltd.). The backside ink supply port 319 was formed by patterning HIMAL and SiO2 on the backside of the nozzle. This pattern was a rectangle having a width of 620 μm and a length of 16 mm.

  Next, a non-penetrating etching lead hole 320 was opened with a YAG laser as shown in FIG. 45 in a portion adjacent to the narrow angle of the parallelogram window of the ink supply port pattern portion on the back surface. At this time, the diameter of the hole was 30 to 35 μm, and the depth was 480 to 560 μm.

  This substrate was immersed in a 21% TMAH aqueous solution and anisotropically etched. In the first stage etching, the etchant temperature was 83 ° C. and the etching time was 6 hours 30 minutes. This was 95% of the time for just etching the thickness of the substrate of 630 μm. Etching stopped before the sacrificial layer as shown in FIG.

  Here, the bath was changed to an etching solution temperature of 80 ° C., and etching was further performed for 1 hour and 20 minutes. The etching proceeds to the Al sacrificial layer as shown in FIG. 26 and stops in front of the etching stop layer 306. At this time, there was no crack in the etching stop layer, and no penetration of the etching solution into the flow path forming resin layer 315 and the nozzle portion 316 was observed.

  Next, as shown in FIG. 27, SiN in the etching stop layer was removed by the CDE method. Etching conditions were CF 4 / O 2 / N 2 = 300/250/5 sccm, RF 800 W, and pressure 250 mtorr.

  As shown in FIG. 28, after immersion in methyl isobutyl ketone, the protective film is removed by applying ultrasonic waves in xylene, and the resin 315 is removed by applying ultrasonic waves in methyl lactate to form an ink flow path 324 to perform ink jet recording. I got a head.

  Using this ink jet recording head, a printing test was performed at an ejection frequency of 15 KHz. A high-quality printed matter free from printing blur, density unevenness, and non-ejection of ink was obtained over the entire 15 mm width.

  In the following, another embodiment of the present invention will be described.

  The structure and formation method of the heater, electrode, nozzle, and the like were the same as in Example 2, and anisotropic etching was performed in two stages. In the first stage etching, the concentration of the etchant was TMAH 22%, the etchant temperature was 83 ° C., and the etching time was 6 hours and 40 minutes. Etching stopped before the sacrificial layer.

  Here, the bath was changed, the etching solution concentration was TMAH 25%, the etching solution temperature was 80 ° C., and etching was further performed for 1 hour and 40 minutes. The etching proceeded to the Al sacrificial layer and stopped in front of the etching stop layer. At this time, there was no crack in the etching stop layer, and no penetration of the etching solution into the flow path forming resin layer or the nozzle portion was observed.

  All subsequent steps were the same as in Example 2.

  Using this ink jet recording head, a printing test was performed at an ejection frequency of 15 KHz. A high-quality printed matter free from printing blur, density unevenness, and non-ejection of ink was obtained over the entire 15 mm width.

  In the following, another embodiment of the present invention will be described.

  The configuration and formation method of the heater, electrode, nozzle, and the like were the same as in Example 2, and the anisotropic etching conditions were continuously changed. In the initial etching, the concentration of the etching solution was TMAH 22%, the etchant temperature was 83 ° C., and the etching time was 6 hours and 40 minutes.

  Thereafter, the etching solution temperature was lowered once every 20 minutes to 80 ° C., and etching was further performed for 1 hour and 10 minutes. The etching proceeded to the Al sacrificial layer and stopped in front of the etching stop layer. At this time, there was no crack in the etching stop layer, and no penetration of the etching solution into the flow path forming resin layer or the nozzle portion was observed.

  All subsequent steps were the same as in Example 2.

  Using this ink jet recording head, a printing test was performed at an ejection frequency of 15 KHz. A high-quality printed matter free from printing blur, density unevenness, and non-ejection of ink was obtained over the entire 15 mm width.

Schematic showing an inkjet recording head etching process of an exemplary embodiment according to the present invention. Conceptual diagram showing the problems of the prior art The conceptual diagram which shows the board | substrate used for the experiment which leads to this invention The conceptual diagram which shows the board | substrate used for the experiment which leads to this invention The conceptual diagram which shows the board | substrate used for the experiment which leads to this invention The conceptual diagram which shows the board | substrate used for the experiment which leads to this invention A diagram showing the relationship between the temperature of the etchant and the probability of cracks in the etching stop layer A diagram showing the relationship between the temperature of the etchant and the time required to penetrate the substrate Diagram showing the relationship between the concentration of the etchant and the probability of cracks in the etching stop layer Diagram showing the relationship between etchant concentration and time required for substrate penetration The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Si substrate 102 Sacrificial layer 103 Etch stop layer 103 Ink flow path forming mold material 104 Back surface protective film 105 Etch protective film 106 Back surface ink supply port pattern 201 Silicon wafer substrate 202 Insulating film 203 Sacrificial layer 204 Lower layer electrode 205 Etch stop layer 206 Upper layer electrode 207 Heater 208 Nozzle forming resin 209 Ink discharge port 210 Ink flow path forming resin 211 Etching protection film 212 Back surface ink supply port pattern 301 Silicon wafer substrate 302 Insulating film 303 Ink supply port pattern 304 Lower layer wiring 305 Sacrificial layer 306 Etching stop layer 307 Interlayer Insulating film 308 Contact hole 309 Heater 310 Upper layer electrode 311 Heater protective film 312 Cavitation resistant film 313 Alkali resistant resin film 314 Alkali resistant resin film 315 Ink flow path forming material 316 Nozzle forming material 317 Discharge port 318 Protective film for anisotropic etching 319 Back surface supply port 320 Laser processing etching leading hole 321 Si wafer etching residue 322 Supply port opening 323 Supply port Opening 324 Ink channel 401 Si substrate 402 SiO2
403 Supply port opening 404 Sacrificial layer 405 Lower layer wiring electrode 406 Etching stop layer & interlayer insulating film 407 Etching stop layer & interlayer insulating film 408 Contact hole 409 Upper layer wiring 410 Heater 411 Ink channel forming material 412 Nozzle forming material 413 Ejection port 414 Protective film for anisotropic etching 415 Back surface supply port 416 Ink flow path

Claims (6)

  Forming an insulating film as a livestock heat layer on the silicon substrate; forming an ink discharge pressure generating element on the film; depositing a thin film on the silicon substrate surface with a material susceptible to etching liquid; A step of forming a pattern in the shape of the substrate, a step of forming an etching stop layer of a silicon oxide film or a silicon nitride film or a mixture thereof on the pattern of the shape of the supply port, and a back surface on which the silicon oxide film or the silicon nitride film is formed. A step of removing the silicon in the portion serving as the ink supply port by anisotropic etching, and a step of removing the silicon oxide film, the silicon nitride film or the mixture of the etching stop layer remaining in the ink supply port portion A method of manufacturing an inkjet recording head comprising at least a series of anisotropic etching A method for producing an ink jet recording head, characterized in that to vary the etching rate of emission substrate by etching the initial and the through immediately before.   2. The method of manufacturing an ink jet recording head according to claim 1, wherein an etching rate of the anisotropic etching is high at an early stage of etching and is slowed down immediately before penetration.   3. The method of manufacturing an ink jet recording head according to claim 2, wherein the anisotropic etching is performed by reducing the etching rate by relatively lowering the temperature of the etching solution.   3. The method of manufacturing an ink jet recording head according to claim 2, wherein the anisotropic etching is performed by reducing the etching rate by relatively increasing the concentration of the etching solution.   In order to slow down the etching rate of the anisotropic etching, it is a method of controlling by combining a relatively low temperature of the etching solution and a relatively high concentration of the etching solution. A method for manufacturing an ink jet recording head according to claim 2.   6. An ink jet recording head manufacturing method according to claim 1, wherein an etching solution used for the anisotropic etching is tetramethylammonium hydride (TMAH).

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