JP2007237671A - Method for manufacturing inkjet recording head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inkjet recording head capable of performing high-quality printing with an inexpensive process under low temperatures, which keeps an etching sacrifice layer taper-angled to drastically lower the cracking probability in an etching stop layer during the formation of an ink supply port using anisotropic etching, with an improved yield. <P>SOLUTION: The sacrifice layer 102 used for the anisotropic etching is moderately tapered to release stress concentration at the shoulder part of a thin film sacrifice layer of the etching stop layer 103 deposited thereupon, thereby lowering the generation probability of membrane cracking. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an inkjet recording head that discharges a desired liquid by applying energy to the liquid from the outside, and a method for manufacturing the inkjet recording head.

  There is known an ink jet recording method in which the generation of bubbles is promoted by applying energy such as heat to the ink, the ink is ejected from the ejection port using this volume change, and this is deposited on the recording medium to form an image. It has been. Among ink jet systems, a side shooter type (Patent Document 1) that ejects ink perpendicular to a substrate has been proposed. Further, as a method for manufacturing this head, a method (Patent Document 2) is disclosed in which the shape of the ink supply port is molded using a sacrificial layer.

This is a material in which a silicon oxide film or a silicon nitride film is formed on a silicon substrate, an ink discharge pressure generating element is formed on the silicon oxide film or the silicon nitride film, and the silicon substrate surface is susceptible to etching liquid. Depositing a thin film to form a pattern (etching sacrificial layer) in the shape of an ink discharge port, further forming an etching stop layer on the pattern of the discharge port shape, forming an ink discharge port portion on the surface of the silicon substrate; An opening is provided on the back surface of the silicon oxide film or silicon nitride film forming surface, the silicon serving as the ink supply port is removed by anisotropic etching, and the silicon oxide film of the etching stop layer remaining in the ink supply port or It has been formed by a process of removing the silicon nitride film or a mixture thereof.
JP-A-9-011479 Japanese Patent Laid-Open No. 10-181032

  In the conventional side shooter type ink jet recording head, the cross section is formed in a vertical shape when the etching sacrificial layer is patterned. When an etching stop layer was deposited thereon, a portion where strain was locally concentrated on the shoulder of the etching sacrificial layer was generated as shown in FIG. Therefore, when the silicon wafer is etched by anisotropic etching and the sacrificial layer is removed, the etching stop layer cracks as shown in FIG. 205 may be altered or deformed.

  The above-mentioned problems include a step of forming an insulating film such as a silicon oxide film or a silicon nitride film as a livestock heat layer on a silicon substrate, a step of forming an ink discharge pressure generating element on the film, a surface of the silicon substrate A step of depositing a thin film with a material susceptible to etching liquid to form a pattern in the shape of the ink discharge port, a step of forming an etching stop layer on the pattern of the discharge port shape, the silicon oxide film or the silicon nitride film An opening is formed on the back surface on which the ink is formed and the silicon serving as the ink supply port is removed by anisotropic etching, the silicon oxide film or silicon nitride film of the etching stop layer remaining in the ink supply port, or a mixture thereof A method of manufacturing an ink jet recording head including at least a step of removing ink, wherein the substrate surface is discharged Edge portion of the pattern of the thin film pattern of the shape is solved by the manufacturing method of the ink jet recording head is characterized in that characterized in that with an inclination of less than 75 degrees with respect to the substrate surface.

[Action]
By giving the etching sacrificial layer a taper, the stress concentration at the shoulder of the sacrificial layer of the thin film of the etching stop layer deposited thereon was eased, and the lower sacrificial layer was removed by anisotropic etching. Later, cracks are prevented from occurring in the etching stop layer.

  The optimum taper angle varies depending on the sacrificial layer thickness and sacrificial layer material, the thickness of the etching stop layer, and the internal stress, but the probability of occurrence of cracks in the etching stop layer generally decreases when the angle of the side surface of the sacrificial layer is shallow.

[Experiment]
Hereinafter, experiments related to the present invention will be described. FIG. 1 shows a cross-sectional structure of a sample used in the experiment. A sacrificial layer 102 was formed by depositing 3000 Å of an AlCu film on the surface of a 5-inch Φ, 625 μm thick Si (100) wafer 101 and patterning it as shown in the plan view 3. The shape of the sacrificial layer was rectangular, and the width was 150 μm and the length was 2 mm. An etching stop layer 103 was formed thereon by depositing 6000 mm of SiN film by plasma CVD. The deposition conditions for the SiN film at this time were SiH 4 / NH 3 / N 2 = 500/1500/6300 sccm, pressure 150 mtorr, substrate temperature 380 ° C., and RF 1700 W. The film stress measured with a single film was 1.5 × 10 exp-9 dyne / cm. On the back surface of the substrate, an anisotropic etching pattern is formed by patterning a thermal oxide film as shown in the plan view of FIG. An alkali resistant resist (OBC, manufactured by Tokyo Ohka Kogyo Co.) 106 is applied to the substrate surface.

  The sacrificial layer was patterned by reactive ion etching (RIE), and etched using a resist tapered by changing the post-bake temperature so that the cross-sectional shape was tapered. The RIE conditions at this time were BCl 3 / Cl 2 = 20/20 sccm, 20 mtorr, and RF 900 W.

  FIG. 7 shows the relationship between the resist baking temperature (baking time 10 minutes) and the taper angle of the cross section of the sacrificial layer. It can be seen that the higher the post-bake temperature, the smaller the taper angle. However, if baking is performed at 180 degrees or more, the resist may be altered, and peeling after RIE may be difficult.

  A sample with a tapered angle in the sacrificial layer was immersed in tetramethylammonium hydride (TMAH), and silicon was anisotropically etched from the back surface. Etching conditions were TMAH / H 2 O = 21%, liquid temperature 83 ° C., and etching time was 12 hours. Then, as shown in FIG. 2, the hole opened in the silicon finally reaches the sacrificial layer, and the sacrificial layer is etched to stop at the etching stop layer.

  FIG. 8 shows the taper angle of the sacrificial layer and the crack generation probability of the etching stop layer. It has been found that when the taper angle is 75 degrees or less, the probability of occurrence of cracks sharply decreases.

  As described above, according to the present invention, by providing a taper angle to the etching sacrificial layer, the probability of cracking of the etching stop layer when forming the ink supply port using anisotropic etching is drastically reduced, and the yield is increased. And an inkjet recording head capable of high-quality printing using a low-temperature and inexpensive process can be provided.

  Next, details of the present invention will be described in accordance with the description of the embodiments.

  FIG. 9 is a schematic view of a heater board substrate in the course of the manufacturing process of the ink jet recording head showing an embodiment according to the present invention. As the substrate, a (100) or (110) Si wafer is used. A sacrificial layer 303 was formed by depositing 3000 μm of AlCu film on the surface of the wafer and patterning it. The planar shape of the sacrificial layer is a rectangle as shown in FIG. 3 for the Si (100) substrate, and a parallelogram with a narrow angle of 70.5 degrees as shown in FIG. 10 for the Si (110) substrate. . The side surface of the sacrificial layer is tapered, and the angle formed with the substrate surface is generally 75 degrees or less, preferably 70 degrees or less, and optimally 60 degrees or less.

  A thin film was deposited thereon by sputtering, vapor deposition, or plasma CVD to form an etching stop layer 304. The thickness of the etching stop layer is generally 1000 to 20000 mm, preferably 2000 to 16000 mm, and most preferably 3000 to 13000 mm.

  A heater 305, wiring 306, and the like are disposed adjacent to the sacrificial layer.

  Further, an etching pattern 307 obtained by patterning an alkali-resistant film is formed on the back surface of the substrate, and an ink supply port is formed by opening a through hole toward the sacrificial layer on the surface by anisotropic etching.

  Next, the process of the ink jet recording nozzle according to the present invention will be described step by step with reference to FIGS.

  (1) To form an insulating film 402 on a silicon substrate 401 having a substrate surface orientation (110) of, for example, thermal oxidation or CVD, and provide an ink supply port as shown in FIG. 11 (plan view FIG. 10) by photolithography. The desired pattern 403 is formed.

  (2) A metal having a low resistance such as Al or Cu and a high etching rate for an etchant for anisotropic etching such as TMAH (tetra-methyl-ammonium hydride) is deposited and patterned to form the lower layer wiring 404 and the sacrificial layer 405. Form. The etching sacrificial layer is an etching rate that is much faster than the Si wafer when etching proceeds from the back surface and the etchant reaches the sacrificial layer, so that etching can be performed in a short time and an opening corresponding to the sacrificial layer pattern can be opened. is there. The pattern at this time is a parallelogram with a narrow angle of 70.5 degrees so that an etching hole is perpendicular to the substrate, and the long side and the short side of the parallelogram are on a plane equivalent to (111). Arrange them so that they are parallel.

  The sacrificial layer was patterned by reactive ion etching (RIE) or the like, and etched using a resist that was tapered by changing the post-bake temperature so that the cross-sectional shape was tapered. It can be seen that the taper angle becomes smaller as the resist post-bake temperature is higher. However, if the baking is performed at a high temperature, the resist changes in quality, and peeling after etching becomes difficult. The side surface of the sacrificial layer is tapered, and the angle formed with the substrate surface is generally 75 degrees or less, preferably 70 degrees or less, and optimally 60 degrees or less.

  (3) An SiN or SiON film is deposited as an etching stop layer 406 on the substrate surface by plasma CVD. As the etching stop layer, two or more kinds of films may be laminated in order to adjust the film stress.

  The total thickness of the laminated etching stop film is generally 2000-2 μm, preferably 3000-15000 mm, and most preferably 4000-13000 mm. The total stress of the laminated etching stop film is generally 2 × 10 exp-9 dyne / cm 2 or less, more preferably 1.8 × 10 exp-9 dyne / cm 2 or less, and most preferably 1.5 × 10 exp-9 dyne / cm 2. It is as follows.

  (4) A film such as SiN, SiON, or SiO 2 is deposited by plasma CVD or the like to form an interlayer insulating film 407. Further, a contact hole 408 is formed in the interlayer insulating film.

  (5) A heater unit 409 is formed as an ink discharge pressure generating element in accordance with the ink supply port. As the heater material, a metal film such as Ta, TaN, TaNSi or the like is deposited and patterned by sputtering, vacuum evaporation or the like. Further, a metal film of Al, Mo, Ni, Cu or the like is formed in the same manner as the upper layer electrode 410 for power supply.

  (6) A SiN film 411 is deposited on the heater by plasma CVD for the purpose of improving durability to form a protective film.

  (7) On this, Ta is deposited and patterned as a cavitation resistant film 412 by a sputtering method or the like. The thickness of this film is preferably 1000 to 5000 mm, more preferably 2000 to 4000 mm, and most preferably 2500 to 3500 mm.

  Needless to say, there is no particular limitation on the order of forming the wiring and the heater.

  (8) A resin film 413 with high corrosion resistance is formed in order to increase the adhesion of the resin nozzle and to protect the back surface from the alkaline etchant. Then, the heater part and the ink supply port part are patterned.

  (9) In order to secure the ink flow path, the pattern 414 is formed of a resin that can be dissolved in a strong alkali or an organic solvent. This pattern is formed by a printing method or patterning with a photosensitive resin.

  (10) A coating resin layer 415 is formed on the ink flow path pattern. Since this coating resin layer forms a fine pattern, a photosensitive resist is desirable, and further, the coating resin layer must have a property of not being deformed and altered by an alkali, a solvent, or the like when the resin layer having the flow path is removed.

  (11) Next, the coating resin layer of the flow path is patterned to form the ink discharge port 416 corresponding to the heater portion 409 and the external connection portion of the electrode. Thereafter, the coating resin layer is cured by light or heat.

  (12) A protective film 417 is formed with a resist to protect the nozzle forming surface side of the substrate.

  (13) Using a photolithographic technique, the back surface of the SiN or SiO2 is removed from the ink supply port pattern portion 418 to expose the wafer surface. The pattern is formed so as to have a mirror image relationship with the sacrificial layer. The manufacturing method of the etching mask film on the back surface is not limited to plasma CVD, but may be LPCVD, atmospheric pressure CVD, thermal oxidation, or the like.

  (14) Next, an etching leading hole 419 is formed in a narrow-angle vicinity portion of the parallelogram on the back surface (plan view 26 on the back surface). Generally, laser machining or the like is used, but electric discharge machining, blasting, or the like may be used.

  This lead hole can be as close as possible to the etching stop layer. The depth of the leading hole is generally 60% or more of the substrate thickness, preferably 70% or more, and optimally 80% or more. Also, it must not penetrate the substrate. By this leading hole, the oblique (111) plane generated from the narrow angle of the parallelogram is suppressed.

  (15) When this substrate is immersed in an alkaline etchant (KOH, TMAH, hydrazine, etc.) and anisotropic etching is performed so that the (111) plane appears, the planar shape is a parallelogram (rectangular for (100) substrate). A through hole is formed.

  (16) The film of SiN or the like of the etching stop layer 406 is partially removed by a chemical solution such as hydrofluoric acid or dry etching to open the ink supply port. Finally, the ink flow path forming material 414 is removed to secure the ink flow path 420.

  In the above process, the substrate processing procedure is not particularly limited, and can be arbitrarily selected.

  The substrate of the ink jet recording head according to the present invention will be described below.

  FIG. 9 is a schematic view of a heater board substrate in the course of the manufacturing process of the ink jet recording head showing an embodiment according to the present invention. A 5-inch ΦSi (110) wafer was used as the substrate. A sacrificial layer 303 was formed by depositing 3000 μm of AlCu film on the surface of the wafer and patterning it as shown in the plan view 10. The planar shape of the sacrificial layer was a parallelogram with a narrow angle of 70.5 degrees. The width of the sacrificial layer was 160 μm and the length was 8 mm. The side surface of the sacrificial layer is tapered, and the angle formed with the substrate surface is 45 degrees.

  An SiN film of 8000 mm was deposited thereon to form an etching stop layer 304. The deposition conditions for the SiN film at this time were SiH 4 / NH 3 / N 2 = 500/1500/6300 sccm, pressure 150 mtorr, substrate temperature 380 ° C., and RF 1700 W.

  A TaSiN heater 305 and an AlCu wiring 306 are disposed adjacent to the sacrificial layer.

  On the back surface of the substrate, an etching pattern 307 was formed by patterning an alkali resistant film (manufactured by HIMAL Hitachi Chemical Co.) 310 on the oxide film 5000 Å so as to be a mirror image of the sacrificial layer.

  From here, through holes are opened toward the sacrificial layer on the surface by anisotropic etching to form ink supply ports.

  Hereinafter, other embodiments of the substrate of the ink jet recording head according to the present invention will be described.

  FIG. 27 is a schematic view of a heater board substrate in the middle of the manufacturing process of the ink jet recording head showing an embodiment according to the present invention. A 5-inch ΦSi (100) wafer was used as the substrate. A 3000-thick Al film was deposited on the surface of the wafer and patterned as shown in plan view 3 to form a sacrificial layer. The planar shape of the sacrificial layer was a rectangle. The sacrificial layer had a width of 100 μm and a length of 10 mm. The side surface of the sacrificial layer is tapered, and the angle formed with the substrate surface is 65 degrees.

  An SiN film of 6000 mm was deposited thereon to form an etching stop layer 503.

  A TaN heater 504 and an Al wiring 505 are arranged adjacent to the sacrificial layer.

  Further, on the back surface of the substrate, a plasma SiN film 506 was deposited in an amount of 6000 mm, and an etching pattern was formed by patterning an alkali-resistant film (manufactured by HIMAL Hitachi Chemical Co.) 507 as shown in FIG. This pattern was a rectangle having a width of 600 μm and a length of 11 mm in consideration of tapering of the wafer cross section by anisotropic etching.

  From here, through holes are opened toward the sacrificial layer on the surface by anisotropic etching to form ink supply ports.

  A method for manufacturing the ink jet recording head of the present invention will be described step by step with reference to FIGS.

  As shown in FIG. 28, a Si wafer 601 having a thickness of 625 μm and a 5-inch Φ (100) plane was thermally oxidized to form 14000 ＳｉＯ of SiO 2 layer 602. Next, the supply port opening 603 was formed by patterning SiO2. 3000 liters of Al film was deposited with a sputter. The sacrificial layer 604 and the lower layer electrode wiring 605 were formed by patterning as shown in FIG. The width of the sacrificial layer was 120 μm, and the long side direction was 15 mm.

  At this time, patterning of the Al film was performed by applying a resist (OFPR, manufactured by Tokyo Ohka Kogyo, OFPR is a registered trademark) of 3 μm, exposing and developing, and then post-baking at 150 ° C. for 10 minutes to taper the resist. This was etched into a tapered shape by RIE. The conditions were BCl 3 / CF 4 / Cl 2 = 75/20/50 sccm, 12 mtorr, RF 1500 W. The taper angle was 60 degrees.

  As a film that doubles as an etching stop layer and an interlayer insulating film, 3000 nm of SiON film 606 was deposited by plasma CVD as shown in FIG. Further, 3000 nm of SiN film 607 was deposited by plasma CVD.

  Using a photolithography technique, a contact hole 608 was formed in the interlayer insulating film as shown in FIG.

  Further, the upper wiring electrode 610 and the heater 609 are formed by sputtering and patterning by continuously forming 500 N of TaN and 3000 N of Al.

  An ink flow path mold 611 was formed as shown in FIG. 33 by applying 20 μm of polymethyl isopropenyl ketone (Tokyo Ohka ODUR-1010) as a photosensitive resin and patterning. Furthermore, 10 μm of the photosensitive resin layer 612 shown in FIG. 44 was applied and patterned to form ink discharge ports 613 as shown in FIG. Note that the epicoat shown in FIG. 44 is a registered trademark.

  In order to protect the nozzle forming surface side, a protective film 614 was formed with a rubber-based resist (OBC manufactured by Tokyo Ohka Kogyo Co., Ltd.). The backside ink supply port 615 was formed by patterning the SiO2 on the backside of the nozzle. This pattern was a rectangle having a width of 620 μm and a length of 16 mm.

  This substrate was immersed in 20% TMAH aqueous solution and anisotropically etched. The etchant temperature was 83 ° C. and the etching time was 12 hours. This was an overetching time of 10% with respect to the time for just etching the thickness of the substrate of 625 μm.

  The etching proceeds to the Al sacrificial layer as shown in FIG. 38 and stops in front of the etching stop layer 606. At this time, there was no crack in the etching stop layer, and no penetration of the etching solution into the flow path forming resin layer 611 and the nozzle portion 612 was observed.

  Next, as shown in FIG. 39, SiON and SiN in the etching stop layer were removed by the CDE method. Etching conditions were CF 4 / O 2 / N 2 = 300/250/5 sccm, RF 800 W, and pressure 250 mtorr.

  As shown in FIG. 40, ultrasonic waves were applied in methyl lactate to remove the resin 411, and the ink flow path 616 was formed. Finally, after immersion in methyl isobutyl ketone as shown in FIG. 41, the protective film was removed by applying ultrasonic waves in xylene to complete the ink jet recording head.

  Using this ink jet recording head, a printing test was performed at an ejection frequency of 15 KHz. A high-quality printed matter free from printing blur, density unevenness, and non-ejection of ink was obtained over the entire 15 mm width.

(Comparative Example 1)
Below, the comparative example of this invention is demonstrated.

  The structure and formation method of the heater, electrodes, nozzles, etc. are the same as those in Example 1. At the time of patterning the sacrificial layer, the resist post-baking temperature is 100 ° C., and the taper angle on the side surface of the sacrificial layer after RIE is 85 degrees. there were.

  All subsequent steps were the same as in Example 1.

  Using this ink jet recording head, a print test was performed at an ejection frequency of 15 KHz, but there were white spots where ink was not ejected. When the head was observed, a part of the resin nozzle was found after alkali erosion, which seems to be caused by cracks in the etching stop layer.

  Hereinafter, another method for manufacturing the ink jet recording head according to the present invention will be described in order.

  As shown in FIG. 11, the top surface of the (110) Si wafer 401 having a thickness of 780 μm, a width of 150 mm, and a length of 330 mm was thermally oxidized to form 8000 mm of the SiO 2 layer 402. Next, the supply port opening 403 was formed by patterning SiO2. 3000 μm of AlCu film was deposited with a sputter. The Cu content of this film was 0.5%. A sacrificial layer 405 and a lower electrode wiring 404 are formed by photolithography as shown in FIG. 12 (the sacrificial layer is patterned in a parallelogram as shown in FIG. 42). The width of the sacrificial layer was 120 μm, the long side direction was 2 mm, and the width of the portion corresponding to the relief 420 between the adjacent sacrificial layers was 60 μm. 134 sacrificial layers were arranged in series with a pinch interposed therebetween.

  At this time, patterning of the AlCu film was performed by applying a resist (OFPR Tokyo Ohka Kogyo Co., Ltd.) of 3 μm, exposing and developing, and post-baking at 170 ° C. for 8 minutes to taper the resist. This was etched into a tapered shape by RIE. The conditions were BCl 3 / Cl 2 = 75/200 sccm, 20 mtorr, and RF 600 W. The taper angle was 45 degrees.

  Next, 8000 mm of SiN film 406 was deposited by plasma CVD as an etching stop layer.

  The film formation conditions at this time were SiH 4 / NH 3 / N 2 = 500/1500/6300 sccm, pressure 1500 mtorr, substrate temperature 400 ° C., and RF 1700 W.

  After patterning so as to cover the periphery of the sacrificial layer 405 as shown in FIG. 13 using a photolithographic technique, 15000 nm of SiON was formed as an interlayer insulating film 407. The film formation parameters at this time were SiH 4 / N 2 O / N 2 = 250/1200/4000 sccm, pressure 1500 mtorr, substrate temperature 400 ° C., RF 1700 W, composition ratio Si / O / N = 37/61/2.

  Thereafter, contact holes 408 are formed in the interlayer insulating film as shown in FIG. 14, and 500 nm of TaSiN (composition ratio 44/43/13) and 3000 mm of Al are continuously formed and patterned, as shown in FIG. A heater 409 and an upper wiring 410 were formed.

  Next, 3000 nm of plasma CVD SIN was deposited and patterned as the heater protective film 411. The film forming conditions were SiH 4 / NH 3 / N 2 = 180/480/2000 sccm, pressure 1500 mtorr, substrate temperature 300 ° C., and RF 1700 W.

  Further, in order to protect the heater from cavitation due to ink foaming, 3000 liters of Ta was deposited and patterned by sputtering to form a cavitation resistant film 412.

  In order to increase the adhesion of the resin nozzle and to protect the back surface from the alkali etchant, a polyetheramide-based resin film (HIMAL) 413 having high corrosion resistance is formed by applying and baking 2 μm. Thus, the heater part and the ink supply port part were exposed by patterning.

  As a photosensitive resin, polymethyl isopropenyl ketone (Tokyo Ohka ODUR-1010) was applied by 20 μm and patterned to form an ink flow path forming member 414 as shown in FIG. Furthermore, 10 μm of photosensitive resin 415 shown in FIG. 44 was applied and patterned to form ink ejection ports 416 as shown in FIG.

  In order to protect the nozzle forming surface side, a protective film 417 was formed with a rubber resist (OBC manufactured by Tokyo Ohka Kogyo Co., Ltd.). The ink supply port 418 was formed by patterning the SiO2 on the back surface where the nozzle was formed. The pattern at this time was a parallelogram having a mirror image relationship with the surface sacrificial layer as shown in FIG. And the width | variety of the part corresponded to the elasticity similarly to the surface was provided 120 micrometers.

  Next, a non-penetrating etching lead hole 419 was opened with a YAG laser as shown in FIG. 43 in a portion adjacent to the narrow angle of the parallelogram window of the ink supply port pattern portion on the back surface. The diameter of the hole at this time was 30-35 micrometers, and the depth was 550-730 micrometers.

  This substrate was immersed in a 21% TMAH aqueous solution and anisotropically etched. The etchant temperature was 83 ° C. and the etching time was 9 hours. This was an overetching time of 10% with respect to the time for just etching the thickness of the substrate of 780 μm.

  The etching proceeds to the AlCu sacrificial layer as shown in FIG. 22 and stops in front of the etching stop layer 406. At this time, there was no crack in the etching stop layer, and no penetration of the etching solution into the flow path forming resin layer 414 or the nozzle portion 415 was observed.

  Next, as shown in FIG. 23, SiON and SiN in the etching stop layer were removed by the CDE method. Etching conditions were CF 4 / O 2 / N 2 = 300/250/5 sccm, RF 800 W, and pressure 250 mtorr.

  As shown in FIG. 24, after immersion in methyl isobutyl ketone, the protective film is removed by applying ultrasonic waves in xylene, and the resin 414 is removed by applying ultrasonic waves in methyl lactate to form an ink flow path 420 and ink jet recording. I got a head.

  Using this ink jet recording head, a printing test was performed at an ejection frequency of 10 KHz. A high-quality printed matter free from printing blur, density unevenness, and non-ejection of ink was obtained over the entire width of 270 mm.

Schematic showing a cross section of a base substrate of an ink jet recording head according to the present invention Schematic showing a cross section after anisotropic etching of a base substrate of an ink jet recording head according to the present invention Schematic showing the upper surface of the base substrate of the inkjet recording head according to the present invention Schematic showing the upper surface of the base substrate of the inkjet recording head according to the present invention Diagram showing conventional technology Diagram showing conventional technology Relationship between resist baking temperature and taper angle after sacrificial layer etching Figure showing the taper angle of the sacrificial layer and the probability of cracking in the etch stop layer after anisotropic etching Schematic showing a cross section of the substrate during the manufacturing process of the inkjet recording head according to the present invention Schematic showing the upper surface of the base substrate of the inkjet recording head according to the present invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention Schematic showing a cross section of the substrate during the manufacturing process of the inkjet recording head according to the present invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention The figure which shows the manufacturing process flow of the inkjet recording head by this invention Diagram showing composition of photosensitive resin

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Si substrate 102 Sacrificial layer 103 Etching stop layer 104 Etching mask material 105 Ink supply port opening 106 Alkali resistant resist 201 Si substrate 202 Sacrificial layer 203 Etching stop layer 204 Ink flow path forming mold 205 Nozzle forming resin 301 Silicon wafer substrate 302 Insulation Film 303 Sacrificial layer 304 Etching stop layer 305 Heater 306 Electrode 307 Ink supply port pattern 309 Insulating film 310 Alkali resistant resin film 401 Si substrate 402 SiO2
403 Supply port opening 404 Lower layer wiring electrode 405 Sacrificial layer 406 Etching stop layer 407 Interlayer insulating film 408 Contact hole 409 Heater 410 Upper layer wiring 411 Protective film 412 Cavitation resistant film 413 Adhesion improving resin film 414 Ink flow path forming material 415 Nozzle Forming material 416 Ejection port 417 Etching protective film 418 Back surface supply port 419 Laser processing etching leading hole 420 Ink flow path 501 Si substrate 502 Sacrificial layer 503 Etching stop layer 504 Heater 505 Wiring electrode 506 Etching mask insulating film 507 Alkali resistant resin film 601 Si substrate 602 Insulating film 603 Supply port opening 604 Sacrificial layer 605 Lower layer wiring electrode 606 Etching stop layer 607 Interlayer insulating film 608 Contact hole 609 611 Ink channel forming material 612 Nozzle forming material 613 Discharge port 614 Etching protective film 615 Back surface supply port 616 Ink channel

Claims (7)

  A step of forming an insulating film as a livestock heat layer on the silicon substrate; a step of forming an ink discharge pressure generating element on the film; and depositing a thin film on the silicon substrate surface with a material susceptible to etching liquid to form an ink discharge port Forming a pattern in a shape, forming an etching stop layer of a silicon oxide film, a silicon nitride film or a mixture thereof on the pattern of the shape of the discharge port, and forming a back surface on which the silicon oxide film or the silicon nitride film is formed. Providing at least an opening and removing silicon in a portion serving as an ink supply port by anisotropic etching; removing at least a silicon oxide film, a silicon nitride film, or a mixture of the etching stop layer remaining in the ink supply port; A method of manufacturing an inkjet recording head comprising: a shape of a discharge port on the substrate surface A method for producing an ink jet recording head in which the edge portion of the pattern of the pattern is characterized in that with an inclination with respect to the substrate surface.   2. The ink jet recording head according to claim 1, wherein the cross section of the pattern has an inclination of 75 degrees or less with respect to the substrate surface in the shape of the ink discharge port formed of the material which is easily affected by the etching solution. Manufacturing method.   3. The method of manufacturing an ink jet recording head according to claim 1, wherein the thin film pattern in the shape of the discharge port on the substrate surface is Al or an alloy containing Al.   3. The method of manufacturing an ink jet recording head according to claim 1, wherein the thin film pattern in the shape of the discharge port on the surface of the substrate is an alloy containing Al and Cu.   3. The method of manufacturing an ink jet recording head according to claim 1, wherein the thin film pattern in the shape of the discharge port on the surface of the substrate is polysilicon or amorphous silicon.   6. The method of manufacturing an ink jet recording head according to claim 1, wherein an etching solution used for the anisotropic etching is tetramethylammonium hydride (TMAH).   The method of manufacturing an ink jet recording head according to claim 1, wherein the insulating film is a silicon oxide film or a silicon nitride film.

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