JP2007237628A - Cutting method of single crystal sapphire substrate and cutting device therefor - Google Patents
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本発明は、超砥粒ワイヤソーで単結晶サファイヤ基板を(11−20)面(a面)と平行な方向に高精度に切断する方法と、その超砥粒ワイヤソー切断装置に関するものである。 The present invention relates to a method of cutting a single crystal sapphire substrate with a superabrasive wire saw in a direction parallel to the (11-20) plane (a-plane) with high accuracy and a superabrasive wire saw cutting apparatus.
単結晶サファイヤは、α−AL2O3の単結晶であり、優れた物理的特性、熱的特性、電気的特性、光学的特性を有しているので、耐磨耗部品、耐熱部品、光学部品、電気・電子部品、半導体部品などに広く利用されている。
単結晶サファイヤの結晶構造は稠密六方晶系に属し、図2に示す面方位によると、単結晶のc軸に対して直角方向に(0001)面(c面と称する)が存在し、このc軸に平行な(11−20)面(a面と称する)および(10−10)面(m面と称する)、c軸に対して一定の角度を有する(1−102)面(r面と称する)および(11−23)面(n面と称する)が存在する。
Single crystal sapphire is a single crystal of α-AL 2 O 3 and has excellent physical characteristics, thermal characteristics, electrical characteristics, and optical characteristics. Widely used in parts, electrical / electronic parts, semiconductor parts, etc.
The crystal structure of the single crystal sapphire belongs to the dense hexagonal system, and according to the plane orientation shown in FIG. 2, there is a (0001) plane (referred to as c-plane) in a direction perpendicular to the c-axis of the single crystal. (11-20) plane (referred to as a-plane) and (10-10) plane (referred to as m-plane) parallel to the axis, and (1-102) plane (r-plane) having a fixed angle with respect to the c-axis And (11-23) plane (referred to as n-plane).
超砥粒ワイヤソーとしては、芯線にダイヤモンド砥粒を固着した、固定砥粒方式のダイヤモンドワイヤソーが提案された。このダイヤモンドワイヤソーは、切れ味が極めて良好で、しかもスラリーが不要、水溶性又は不水溶性の研削液が利用できるため機械とその周辺の汚れが低減され、作業環境を改善することができる特長がある。しかも、数百m若しくは数十Km以上の長尺のダイヤモンドワイヤソーを製作できるので、マルチで切断加工が可能であり、スラリーを用いるマルチワイヤソーと比較して数倍以上の切断速度が得られる特長がある。
固定砥粒方式のダイヤモンドワイヤソーとしては、ポリエチレン、ナイロン、ポリエステル等からなる素材、若しくはこれら素材をガラス繊維、炭素繊維で補強した材料を芯線とし、この芯線の外周にダイヤモンド砥粒を合成樹脂接着剤又は電着で固着するものが提案されている。(例えば、特許文献1)
また、別のダイヤモンドワイヤソーとしては、炭素繊維、アラミド繊維、アルミナ繊維、ボロン繊維、シリコンカーバイド繊維、若しくはシリコン−チタン−炭素−酸素系無機繊維等のモノフィラメント又はマルチフィラメントを芯線とし、この芯線の外周にダイヤモンド砥粒をメッキ又は合成樹脂バインダーで固着したものが提案されている。(例えば、特許文献2)
The fixed abrasive diamond wire saw is made of polyethylene, nylon, polyester, or the like, or a material reinforced with glass fiber or carbon fiber. The core wire has diamond abrasive grains on the outer periphery of the core wire. Or what adheres by electrodeposition is proposed. (For example, Patent Document 1)
As another diamond wire saw, carbon fiber, aramid fiber, alumina fiber, boron fiber, silicon carbide fiber, or monofilament or multifilament such as silicon-titanium-carbon-oxygen-based inorganic fiber is used as a core wire, and the outer periphery of this core wire A diamond abrasive grain fixed by plating or a synthetic resin binder has been proposed. (For example, Patent Document 2)
この超砥粒ワイヤソーは、一例として図3に示される切断装置に用いることができる。超砥粒ワイヤソー切断装置は、多数本の超砥粒ワイヤソーを被加工物に押しつけて超砥粒ワイヤソーを往復走行させながら、被加工物を一度に多数枚にスライシングする装置である。単結晶サファイヤのみならず、大直径のシリコンインゴットからのシリコンウエハのスライシングや、フェライト、ネオジウム磁石などの磁性材料の切断加工、光学ガラスの切断加工に超砥粒ワイヤソー切断装置を用いることが試みられている。
具体的には図3に示すように、メインローラ5と6の外周面には被加工物の切断寸法に応じて溝が設けられている。超砥粒ワイヤソー1はリール2と9の外周面に巻かれている。一方のリール2からガイドローラ3と4を経由して取り出さた超砥粒ワイヤソー1は、メインローラ5と6の溝に順次巻き付けられ、ガイドローラ7と8を経由して、他方のリール9に巻き取られる。超砥粒ワイヤソー1をリール2と9との間で往復走行させながら、多数本の超砥粒ワイヤソー1を被加工物10に押しつけて被加工物10を一度に多数枚に切断加工する。このとき、メインローラ5と6の溝にはノズル11と12から研削液が供給される。
This superabrasive wire saw can be used in the cutting apparatus shown in FIG. 3 as an example. A superabrasive wire saw cutting device is a device that slices a workpiece into a plurality of pieces at a time while pressing a number of superabrasive wire saws against the workpiece and reciprocating the superabrasive wire saw. Attempts have been made to use superabrasive wire saw cutting equipment not only for single crystal sapphire but also for slicing silicon wafers from large diameter silicon ingots, cutting magnetic materials such as ferrite and neodymium magnets, and cutting optical glass. ing.
Specifically, as shown in FIG. 3, grooves are provided on the outer peripheral surfaces of the
超砥粒ワイヤソーを用いて単結晶サファイヤ基板を切断する場合、遊離砥粒方式のワイヤソーに比べて、被削性の良好な結晶面に沿って切断が進み、切断精度に大きく影響する傾向が見られる。例えば、超砥粒ワイヤソーを用いて単結晶サファイヤを(11−20)面(a面)に平行に切断する場合、超砥粒ワイヤソーの走行方向を結晶面に対して任意な方向に設定すると(11−20)面(a面)に平行に切断できない問題が発生した。
そこで、この発明の目的は、単結晶サファイヤ基板の超砥粒ワイヤソーによる切断加工において、(11−20)面(a面)と平行な方向に高精度な切断加工を可能にする切断加工法と、その切断装置を提供するものである。
When cutting a single crystal sapphire substrate using a superabrasive wire saw, the cutting progresses along a crystal surface with good machinability compared to a loose-abrasive wire saw, and there is a tendency to greatly affect the cutting accuracy. It is done. For example, when a single crystal sapphire is cut parallel to the (11-20) plane (a-plane) using a superabrasive wire saw, the traveling direction of the superabrasive wire saw is set to an arbitrary direction with respect to the crystal plane ( 11-20) There was a problem that it could not be cut parallel to the plane (a-plane).
Accordingly, an object of the present invention is to provide a cutting method that enables high-precision cutting in a direction parallel to the (11-20) plane (a-plane) in cutting with a superabrasive wire saw of a single crystal sapphire substrate. The cutting device is provided.
この発明に従った単結晶サファイヤ基板の切断方法は、超砥粒ワイヤソーによる、(11−20)面(a面)を主面とする単結晶サファイヤ基板の切断方法であって、超砥粒ワイヤソーの切り込み方向が(11−20)面(a面)に対して平行で、超砥粒ワイヤソーの走行方向が(1−102)面(r面)に対して平行であることを特徴とする単結晶サファイヤ基板の切断方法である。 A method for cutting a single crystal sapphire substrate according to the present invention is a method for cutting a single crystal sapphire substrate having a (11-20) plane (a-plane) as a main surface using a superabrasive wire saw, The cutting direction is parallel to the (11-20) plane (a-plane) and the traveling direction of the superabrasive wire saw is parallel to the (1-102) plane (r-plane). A method for cutting a crystal sapphire substrate.
また、この発明に従った単結晶サファイヤ基板の切断装置は、単結晶サファイヤの切断に用いる超砥粒ワイヤソー切断装置であって、上記単結晶サファイヤを保持する手段と、上記単結晶サファイヤの(11−20)面(a面)を超砥粒ワイヤソーの切り込み方向に対して平行にセッティングする手段と、上記単結晶サファイヤの(1−102)(r面)を超砥粒ワイヤソーの走行方向に対して平行にセッティングする手段とを有することを特徴とする超砥粒ワイヤソー切断装置である。 The apparatus for cutting a single crystal sapphire substrate according to the present invention is a superabrasive wire saw cutting apparatus used for cutting a single crystal sapphire, the means for holding the single crystal sapphire, and (11 -20) means for setting the plane (a-plane) parallel to the cutting direction of the superabrasive wire saw, and (1-102) (r-plane) of the single crystal sapphire with respect to the running direction of the superabrasive wire saw And a means for setting in parallel to each other.
超砥粒ワイヤソーの切り込み方向が(11−20)面(a面)に対して平行で、超砥粒ワイヤソーの走行方向が(1−102)面(r面)に対して平行であるように設定することによって、(11−20)面(a面)を主面とする単結晶サファイヤ基板を高精度に切断加工することができる。 The cutting direction of the superabrasive wire saw is parallel to the (11-20) plane (a-plane), and the traveling direction of the superabrasive wire saw is parallel to the (1-102) plane (r-plane). By setting, the single crystal sapphire substrate whose main surface is the (11-20) plane (a-plane) can be cut with high accuracy.
この発明の単結晶サファイヤ基板の切断方法の特徴は、超砥粒ワイヤソーによる、(11−20)面(a面)を主面とする単結晶サファイヤ基板の切断方法であって、超砥粒ワイヤソーの切り込み方向が(11−20)面(a面)に対して平行で、超砥粒ワイヤソーの走行方向が(1−102)面(r面)に対して平行であることである。
ここで、超砥粒ワイヤソーの切り込み方向は、(11−20)面(a面)に対して平行、および、超砥粒ワイヤソーの走行方向が(1−102)面(r面)に対して平行とは、これら基準面と超砥粒ワイヤソーが完全に平行な方位から5度以内であることが好ましく、2度以内であることがより好ましい。その切断方法の概略図が図1である。
A feature of the method for cutting a single crystal sapphire substrate according to the present invention is a method for cutting a single crystal sapphire substrate having a (11-20) plane (a-plane) as a main surface using a superabrasive wire saw. The cutting direction is parallel to the (11-20) plane (a-plane) and the traveling direction of the superabrasive wire saw is parallel to the (1-102) plane (r-plane).
Here, the cutting direction of the superabrasive wire saw is parallel to the (11-20) plane (a-plane), and the traveling direction of the superabrasive wire saw is relative to the (1-102) plane (r-plane). “Parallel” means that the reference plane and the superabrasive wire saw are preferably within 5 degrees from a completely parallel orientation, and more preferably within 2 degrees. A schematic diagram of the cutting method is shown in FIG.
また、この発明の単結晶サファイヤ基板の切断装置の特徴は、単結晶サファイヤの切断に用いる超砥粒ワイヤソー切断装置であって、上記単結晶サファイヤを保持する手段と、上記単結晶サファイヤの(11−20)面(a面)を超砥粒ワイヤソーの切り込み方向に対して平行にセッティングする手段と、上記単結晶サファイヤの(1−102)(r面)を超砥粒ワイヤソーの走行方向に対して平行にセッティングする手段とを有することである。
切断装置としては、例えば、図3に示される切断装置に用いることができる。この超砥粒ワイヤソー切断装置は、多数本の超砥粒ワイヤソーを被加工物に押しつけて超砥粒ワイヤソーを往復走行させながら、被加工物を一度に多数枚に切断加工が可能な装置であり、特に、高能率な切断加工が要求される場合には最も適切である。
Also, the single crystal sapphire substrate cutting device according to the present invention is characterized by a superabrasive wire saw cutting device used for cutting a single crystal sapphire, the means for holding the single crystal sapphire, and (11 -20) means for setting the plane (a-plane) parallel to the cutting direction of the superabrasive wire saw, and (1-102) (r-plane) of the single crystal sapphire with respect to the running direction of the superabrasive wire saw And means for setting in parallel.
As the cutting device, for example, the cutting device shown in FIG. 3 can be used. This superabrasive wire saw cutting device is a device that can cut multiple workpieces at a time while pressing the superabrasive wire saw against the workpiece and reciprocating the superabrasive wire saw. In particular, it is most suitable when a highly efficient cutting process is required.
直径0.18mmのピアノ線からなる芯線に、平均砥粒径42μmのダイヤモンド砥粒をレジンボンドで固着したダイヤモンドワイヤソーを用いて単結晶サファイヤの切断実験を行った。以下の切断条件において、超砥粒ワイヤソーの切り込み方向が(11−20)面(a面)に平行で、超砥粒ワイヤソーの走行方向が(1−102)面(r面)に平行の場合(本発明)と、超砥粒ワイヤソーの切り込み方向が(11−20)面(a面)に平行で、超砥粒ワイヤソーの走行方向が(11−02)面(r面)に15°ずれた場合を比較して本発明の効果を確認した。
(切断条件)
被加工物:単結晶サファイヤ
被加工物サイズ:W30mm―H30mm−L30mm
超砥粒ワイヤソー切断機:タカトリ製 610SD
メインローラ間隔:390mm
超砥粒ワイヤソー線速度:400m/min
超砥粒ワイヤソー走行方向:往復走行
ワーク切り込み速度:8mm/h
超砥粒ワイヤソーのテンション:35N
加工液:水溶性加工液
マルチワイヤピッチ:1.0mm
単結晶サファイヤを切断して基板とし、その基板の切断方向のうねりを測定した。測定片は手前側、中央、奥側から各3枚(計9枚)をサンプルとした。そのテスト結果を表1に示す。
A single crystal sapphire cutting experiment was conducted using a diamond wire saw in which diamond abrasive grains having an average abrasive grain size of 42 μm were fixed to a core wire made of a piano wire having a diameter of 0.18 mm with a resin bond. Under the following cutting conditions, when the cutting direction of the superabrasive wire saw is parallel to the (11-20) plane (a-plane) and the traveling direction of the superabrasive wire saw is parallel to the (1-102) plane (r-plane) (Invention) and the cutting direction of the superabrasive wire saw are parallel to the (11-20) plane (a-plane), and the running direction of the superabrasive wire saw is shifted by 15 ° to the (11-02) plane (r-plane). The effects of the present invention were confirmed by comparing the cases.
(Cut condition)
Workpiece: Single crystal sapphire Workpiece size: W30mm-H30mm-L30mm
Super-abrasive wire saw cutting machine: Takatri 610SD
Main roller spacing: 390mm
Super-abrasive wire saw wire speed: 400 m / min
Superabrasive wire saw traveling direction: reciprocating workpiece cutting speed: 8mm / h
Tension of superabrasive wire saw: 35N
Processing fluid: Water-soluble processing fluid Multi-wire pitch: 1.0mm
The single crystal sapphire was cut into a substrate, and the waviness in the cutting direction of the substrate was measured. Three test pieces (total 9 pieces) from the front side, the center, and the back side were used as samples. The test results are shown in Table 1.
表1から明らかなように、超砥粒ワイヤソーの走行方向を(1−102)面(r面)に平行方向にすることにより、切断精度が向上することが判明した。 As apparent from Table 1, it was found that the cutting accuracy was improved by making the traveling direction of the superabrasive wire saw parallel to the (1-102) plane (r-plane).
1 超砥粒ワイヤソー
2,9 リール
3,4,7,8, ガイドローラ
5,6 メインローラ
10 被加工物
11,12 ノズル
1 Super
Claims (2)
超砥粒ワイヤソーの切り込み方向が(11−20)面(a面)に対して平行で、
超砥粒ワイヤソーの走行方向が(1−102)面(r面)に対して平行であることを特徴とする単結晶サファイヤ基板の切断方法。 A method of cutting a single crystal sapphire substrate having a (11-20) plane (a-plane) as a main surface by a superabrasive wire saw,
The cutting direction of the superabrasive wire saw is parallel to the (11-20) plane (a-plane),
A method for cutting a single crystal sapphire substrate, wherein the traveling direction of the superabrasive wire saw is parallel to the (1-102) plane (r-plane).
上記単結晶サファイヤを保持する手段と、
上記単結晶サファイヤの(11−20)面(a面)を超砥粒ワイヤソーの切り込み方向に対して平行にセッティングする手段と、
上記単結晶サファイヤの(1−102)面(r面)を超砥粒ワイヤソーの走行方向に対して平行にセッティングする手段とを有することを特徴とする超砥粒ワイヤソー切断装置。 A superabrasive wire saw cutting device used for cutting a single crystal sapphire substrate,
Means for holding the single crystal sapphire;
Means for setting the (11-20) plane (a-plane) of the single crystal sapphire parallel to the cutting direction of the superabrasive wire saw;
A superabrasive wire saw cutting device comprising means for setting the (1-102) plane (r-plane) of the single crystal sapphire parallel to the traveling direction of the superabrasive wire saw.
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