JP2007235180A - Solar cell module - Google Patents

Solar cell module Download PDF

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JP2007235180A
JP2007235180A JP2007159207A JP2007159207A JP2007235180A JP 2007235180 A JP2007235180 A JP 2007235180A JP 2007159207 A JP2007159207 A JP 2007159207A JP 2007159207 A JP2007159207 A JP 2007159207A JP 2007235180 A JP2007235180 A JP 2007235180A
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solar cell
layer
cell module
optical semiconductor
transparent electrode
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JP4681581B2 (en
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Hideo Yamagishi
英雄 山岸
Toshihide Okatsu
敏秀 大勝
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Kaneka Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

<P>PROBLEM TO BE SOLVED: To achieve insulation between a power generation active part and a peripheral part and also a frame with high productivity in a solar cell module. <P>SOLUTION: A thin film solar cell module is formed by machining at least a part of a transparent electrode layer, an optical semiconductor layer, and a metal layer which are formed on a light-transmitting substrate, into a plurality of cells using a light beam, and by electrically integrating the cells each other, and is equipped with a terminal and a frame, where the transparent electrode layer, the optical semiconductor layer, and the metal layer at the periphery of the light-transmitting substrate are mechanically removed, and an electric resistance value when a voltage of 1500 V is applied between the terminal and the frame is equal to or greater than 100 MΩ. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、太陽電池モジュールに係り、特に、太陽光発電に用いられる薄膜太陽電池モジュールに関する。   The present invention relates to a solar cell module, and more particularly to a thin film solar cell module used for solar power generation.

太陽電池モジュールに求められる特性の一つに絶縁耐圧特性がある。太陽電池モジュールの絶縁耐圧特性は、一般には、太陽電池の端子とフレーム間の耐電圧を測定することにより把握することが出来る。   One of characteristics required for a solar cell module is a dielectric strength characteristic. The dielectric strength characteristics of the solar cell module can be generally grasped by measuring the withstand voltage between the terminals of the solar cell and the frame.

薄膜太陽電池は、透明電極層、光半導体層、金属層などの薄膜を積層することにより形成されるが、これらの層の多くは気相反応によって形成することが多く、この気相反応による積層工程において、いわゆる太陽電池の活性部分とそれ以外の部分とを分離することは困難である。場合によっては、これらの層が基板の裏側まで回り込んでいることがあり、このときはフレームを取り付けたときに、活性部分とフレームとが同電位になることが多い。そのため、従来の薄膜太陽電池においては、絶縁耐圧特性が劣るという欠点があった。   Thin film solar cells are formed by laminating thin films such as transparent electrode layers, optical semiconductor layers, metal layers, etc., but many of these layers are often formed by gas phase reactions. In the process, it is difficult to separate the so-called active portion of the solar cell from other portions. In some cases, these layers may extend to the back side of the substrate. In this case, when the frame is attached, the active portion and the frame are often at the same potential. For this reason, the conventional thin-film solar cell has a drawback that the dielectric strength characteristics are inferior.

このような問題をさけるために、集積化の際にパターニングに用いるレーザー光を用いて、太陽電池中央部の活性領域とフレームに電気的に接触する可能性のある周辺部とを電気的に分離する手法が提案されている。しかしながら、この方法は、レーザービームを集光して用いるため、分離幅が狭く、モジュール全周に渡って絶縁を維持することが困難になる。そのため、製造歩留りなどの信頼性が低く、生産性も低いため、工業的にこの技術を用いることはできなかった。   In order to avoid such problems, the laser light used for patterning during integration is used to electrically separate the active region at the center of the solar cell from the peripheral part that may be in electrical contact with the frame. A technique has been proposed. However, since this method uses a focused laser beam, the separation width is narrow, making it difficult to maintain insulation over the entire circumference of the module. For this reason, this technique cannot be used industrially because of low reliability such as manufacturing yield and low productivity.

本発明は、上記事情の下になされ、発電活性部分と周辺部、ひいては、フレームとの絶縁を、高い生産性で実現することを可能とした太陽電池モジュールを提供することを目的とする。   The present invention has been made under the above circumstances, and an object of the present invention is to provide a solar cell module that can realize insulation between a power generation active portion and a peripheral portion, and thus a frame, with high productivity.

本発明の他の目的は、優れた絶縁耐圧特性を有するだけでなく、封止後の腐食などによる特性低下を発生させず、ガラス強度を維持し、かつ工程が安定で高い生産性で製造が可能な太陽電池モジュールを提供することにある。   Another object of the present invention is not only to have excellent withstand voltage characteristics, but also to prevent the deterioration of characteristics due to corrosion after sealing, to maintain the glass strength, and the process is stable and manufactured with high productivity. The object is to provide a possible solar cell module.

上記課題を解決するため、本発明の一態様は、透光性基板上に形成された、透明電極層、光半導体層および金属層の少なくとも一部を光ビームによる加工によって複数のセルに分離し、相互に電気的に集積化してなり、端子及びフレームが取り付けられた薄膜太陽電池モジュールであって、前記透光性基板の周辺部における、前記透明電極層、前記光半導体層および前記金属層は機械的に除去されており、前記端子とフレーム間に１５００Ｖの電圧を印加したときの抵抗値が１００ＭΩ以上であることを特徴とする薄膜太陽電池モジュールを提供する。   In order to solve the above problems, according to one embodiment of the present invention, at least part of a transparent electrode layer, an optical semiconductor layer, and a metal layer formed over a light-transmitting substrate is separated into a plurality of cells by processing with a light beam. A thin-film solar cell module that is electrically integrated with each other and to which a terminal and a frame are attached, wherein the transparent electrode layer, the optical semiconductor layer, and the metal layer at the periphery of the translucent substrate are Provided is a thin film solar cell module which is mechanically removed and has a resistance value of 100 MΩ or more when a voltage of 1500 V is applied between the terminal and the frame.

本発明の薄膜太陽電池モジュールにおいて、前記透明電極層、前記光半導体層および前記金属層の機械的な除去は、表面研磨法、または微粒子の吹き付けによる機械的なエッチング法により行うことが出来る。後者の方法において、使用される微粒子は、１００μm以下の粒径のものであることが好ましい。   In the thin film solar cell module of the present invention, the transparent electrode layer, the optical semiconductor layer, and the metal layer can be mechanically removed by a surface polishing method or a mechanical etching method by spraying fine particles. In the latter method, the fine particles used preferably have a particle size of 100 μm or less.

機械的な除去は前記透光性基板の表面に対しても行われ、機械的に除去された前記透光性基板、前記透明電極層、前記光半導体層および前記金属層の合計の深さは、5μmないし１００μmであることが好ましく、１０μmないし２５μmであることがより好ましい。   Mechanical removal is also performed on the surface of the translucent substrate, and the total depth of the translucent substrate, the transparent electrode layer, the optical semiconductor layer, and the metal layer mechanically removed is 5 μm to 100 μm is preferable, and 10 μm to 25 μm is more preferable.

また、前記透光性基板の周辺の除去される部分の幅は、絶縁耐圧と有効面積率とから決定されるが、好ましくは０．５ｍｍ以上、より好ましくは０．５ｍｍないし１ｃｍであり、更に好ましくは１ないし５ｍｍである。   Further, the width of the portion to be removed around the translucent substrate is determined from the withstand voltage and the effective area ratio, preferably 0.5 mm or more, more preferably 0.5 mm to 1 cm, Preferably it is 1 to 5 mm.

なお、本発明の薄膜太陽電池モジュールにおいて、透明電極層としては、酸化錫、酸化亜鉛、ＩＴＯ等を用いることが出来る。また、光半導体層としては、シリコンを主成分とする層、例えばp型ａ−ＳｉＣ：Ｈ層、ｉ型ａ−Ｓｉ：Ｈ層、およびｎ型微結晶Ｓｉ：Ｈ層の積層構造を用いることが出来る。更に、金属層としては、銀、Ａｌ、Ｃｒ、Ｔｉおよびこれらと金属酸化物との積層体等を用いることが出来る。   In the thin film solar cell module of the present invention, tin oxide, zinc oxide, ITO or the like can be used as the transparent electrode layer. As the optical semiconductor layer, a layer containing silicon as a main component, for example, a stacked structure of a p-type a-SiC: H layer, an i-type a-Si: H layer, and an n-type microcrystalline Si: H layer is used. I can do it. Furthermore, as the metal layer, silver, Al, Cr, Ti, a laminate of these and a metal oxide, or the like can be used.

以上のように構成される本発明の薄膜太陽電池モジュールでは、相互に分離、かつ集積された複数のセルからなる活性部分の周辺が、機械的に除去されているため、モジュールの全周にわたって、高い絶縁を維持することが出来、そのため、本発明によると、高い絶縁耐圧特性のモジュールを高歩留まりで得ることが可能である。   In the thin film solar cell module of the present invention configured as described above, since the periphery of the active portion consisting of a plurality of cells separated and integrated with each other is mechanically removed, High insulation can be maintained. Therefore, according to the present invention, a module having high withstand voltage characteristics can be obtained with high yield.

本発明によると、絶縁耐圧特性に優れた薄膜太陽電池モジュールを、極めて簡易なプロセスで、高い歩留まりで得ることが可能である。   According to the present invention, it is possible to obtain a thin film solar cell module excellent in dielectric strength characteristics with a high yield by an extremely simple process.

以下、本発明の実施の形態に係る種々の実施例について説明する。   Hereinafter, various examples according to the embodiment of the present invention will be described.

実施例1
図１は、本発明の一実施例に係る太陽電池モジュールを示す断面図である。図１に示す太陽電池モジュールは、次のように製造される。まず、面積９２ｃｍｘ４６ｃｍ、厚さ４ｍｍのソーダーライムガラスからなるガラス基板１上に、熱ＣＶＤ法により酸化錫膜（厚さ８０００Å）２を形成し、複数のセルを集積化するため、この酸化錫膜２をレーザースクライバーでパターニングし、透明電極とした。なお、参照符号３は、 透明電極スクライブ線を示す。 Example 1
FIG. 1 is a cross-sectional view showing a solar cell module according to an embodiment of the present invention. The solar cell module shown in FIG. 1 is manufactured as follows. First, a tin oxide film (thickness: 8000 mm) 2 is formed on a glass substrate 1 made of soda lime glass having an area of 92 cm × 46 cm and a thickness of 4 mm by a thermal CVD method, and this tin oxide film is integrated to integrate a plurality of cells. 2 was patterned with a laser scriber to obtain a transparent electrode. Reference numeral 3 indicates a transparent electrode scribe line.

パターニング方法としては、基板１をＸ−Ｙテーブル上にセットし、ＱスイッチＹＡＧレーザーを用いて、分離加工を行った。レーザーの運転条件は、第２高調波５３２ｎｍを用い、パルス幅３ｋＨｚ、平均出力５００ｎｗ、パルス幅１０ｎｓｅｃであった。分離幅は５０μｍ、ストリング（個別太陽電池）の幅は約１０ｍｍである。   As a patterning method, the substrate 1 was set on an XY table, and separation processing was performed using a Q-switched YAG laser. The operating conditions of the laser were a second harmonic of 532 nm, a pulse width of 3 kHz, an average output of 500 nw, and a pulse width of 10 nsec. The separation width is 50 μm, and the width of the string (individual solar cell) is about 10 mm.

なお、基板の周囲から５ｍｍの位置に、全周にわたり周辺部と太陽電池活性部を電気的に分離するために、図３に示すように、ストリング分離用の加工部１２の他に、レーザーによるパターニングを施した。参照符号１３は、それによって形成されたレーザー絶縁分離線を示す。   In order to electrically separate the peripheral portion and the solar cell active portion over the entire circumference at a position 5 mm from the periphery of the substrate, as shown in FIG. 3, in addition to the string separation processing portion 12, a laser is used. Patterning was performed. Reference numeral 13 denotes a laser insulation separation line formed thereby.

また、半田メッキ銅箔を用いて電極取り出し用の配線を形成するための領域１４を、両端にあるストリング１１ａ，１１ｂの外側に、３．５ｍｍの幅で残した。   Moreover, the area | region 14 for forming the wiring for electrode extraction using solder plating copper foil was left with the width | variety of 3.5 mm on the outer side of the strings 11a and 11b in both ends.

このようにしてパターニングされた酸化錫膜２の上に、分離形成型装置のプラズマＣＶＤ室内において、ａ―Ｓｉ層４をプラズマＣＶＤ法により形成した。即ち、２００℃で、p型ａ−ＳｉＣ：Ｈ半導体層、ｉ型ａ−Ｓｉ：Ｈ半導体層、およびｎ型微結晶Ｓｉ：Ｈ半導体層を順次堆積して、ＰＩＮ接合を構成する積層ａ―Ｓｉ層４を形成した。各層を形成するためには、流量がそれぞれ１００ｓｃｃｍ、５００ｓｃｃｍ、１００ｓｃｃｍのＳｉＨ4 を用い、p型半導体層とn型半導体層を形成する場合にはそれぞれ１０００ｐｐｍの水素希釈のＢ2 Ｈ6 とＰＨ3 を２０００ｓｃｃｍ混入させた。 On the tin oxide film 2 thus patterned, an a-Si layer 4 was formed by a plasma CVD method in a plasma CVD chamber of a separation type apparatus. That is, at 200 ° C., a p-type a-SiC: H semiconductor layer, an i-type a-Si: H semiconductor layer, and an n-type microcrystalline Si: H semiconductor layer are sequentially deposited to form a stacked a- Si layer 4 was formed. In order to form each layer, SiH 4 having a flow rate of 100 sccm, 500 sccm, and 100 sccm is used. When forming a p-type semiconductor layer and an n-type semiconductor layer, hydrogen diluted B 2 H 6 and PH 3, respectively, of 1000 ppm are used. Was mixed with 2000 sccm.

また、p型半導体層の形成には、３０ｓｃｃｍのＣＨ4 も混入させることにより、炭素合金化を行った。各層を形成するための投入パワーは、それぞれ２００Ｗ、５００Ｗ、３ｋＷであり、反応圧力はそれぞれ１ｔｏｒｒ、０．５ｔｏｒｒ、１ｔｏｒｒであった。形成した層の膜厚は、製膜時間からそれぞれ１５０Å、３２００Å、３００Åと推定される。 In addition, the p-type semiconductor layer was formed by carbon alloying by mixing 30 sccm of CH 4 . The input power for forming each layer was 200 W, 500 W, and 3 kW, respectively, and the reaction pressure was 1 torr, 0.5 torr, and 1 torr, respectively. The film thicknesses of the formed layers are estimated to be 150 mm, 3200 mm, and 300 mm, respectively, from the film forming time.

このようにして各層の製膜を行った後、基板１をＸ−Ｙテーブル上にセットして、ＱスイッチＹＡＧレーザーを用いて、 ａ―Ｓｉ層４を、ＳｎＯ2 層２のパターニング位置から１００μｍづつ左にずらしてパターニングを行った。レーザーの運転条件は、第２高調波５３２ｎｍを用い、パルス幅３ｋＨｚ、平均出力５００ｍｗ、パルス幅１０ｎｓｅｃであった。なお、焦点位置をずらすこととで、分離幅を１００μｍにした。参照符号５は、半導体スクライブ線を示す。 After forming each layer in this way, the substrate 1 is set on an XY table, and a Q-switched YAG laser is used to make the a-Si layer 4 100 μm from the patterning position of the SnO 2 layer 2. The patterning was performed by shifting to the left. The operating conditions of the laser were a second harmonic of 532 nm, a pulse width of 3 kHz, an average output of 500 mw, and a pulse width of 10 nsec. The separation width was set to 100 μm by shifting the focal position. Reference numeral 5 indicates a semiconductor scribe line.

その後、マグネトロンスパッタ法により、ＲＦ放電でＺｎＯターゲットを用いて、 パターニングされたａ―Ｓｉ層４上に、１０００Åの膜厚のＺｎＯ層（図示せず）を形成した。スパッタ条件は、アルゴンガス圧力２ｍｔｏｒｒ、放電パワー２００Ｗ、製膜温度２００℃であった。   Thereafter, a ZnO layer (not shown) having a thickness of 1000 mm was formed on the patterned a-Si layer 4 by a magnetron sputtering method using a ZnO target by RF discharge. The sputtering conditions were an argon gas pressure of 2 mtorr, a discharge power of 200 W, and a film forming temperature of 200 ° C.

次に、 ＺｎＯ層上に、同じマグネトロンスパッタ装置のＡｇターゲットを用いることにより、直流放電および室温で、２０００Åの膜厚の金属電極層６を形成した。スパッタ条件は、アルゴンガス圧力２ｍｔｏｒｒ、放電パワー２００Ｗであった。   Next, a metal electrode layer 6 having a thickness of 2000 mm was formed on the ZnO layer by direct current discharge and room temperature by using an Ag target of the same magnetron sputtering apparatus. The sputtering conditions were an argon gas pressure of 2 mtorr and a discharge power of 200 W.

最後に、マグネトロンスパッタ装置から基板１を取り出して、Ｘ−Ｙテーブル上にセットして、ＱスイッチＹＡＧレーザーを用いてＡｇ層およびａ―Ｓｉ層４
をパターニングして、半導体スクライブ線５から１００μｍ離れた位置に裏面電極スクライブ線７を形成した。レーザーの運転条件は、ａ―Ｓｉ層４の加工条件と全く同じであった。分離幅は７０μｍ、ストリング幅は約１０ｍｍである。 Finally, the substrate 1 is taken out from the magnetron sputtering apparatus, set on an XY table, and an Ag layer and an a-Si layer 4 using a Q-switched YAG laser.
The back electrode scribe line 7 was formed at a position away from the semiconductor scribe line 5 by 100 μm. The operating conditions of the laser were exactly the same as the processing conditions for the a-Si layer 4. The separation width is 70 μm and the string width is about 10 mm.

また、酸化錫膜２のときと同様に、基板の周囲から５ｍｍの位置に全周にわたり周辺部と太陽電池活性部を電気的に分離するために、ストリング分離用の加工部の他にレーザーによるパターニングを施した。分割幅は１５０μｍで酸化錫膜２の分離部１３を包括するように加工した。   Further, as in the case of the tin oxide film 2, in order to electrically separate the peripheral portion and the solar cell active portion over the entire circumference at a position of 5 mm from the periphery of the substrate, in addition to the processing portion for string separation, a laser is used. Patterning was performed. The division width was 150 μm, and the separation part 13 of the tin oxide film 2 was processed.

次に、このパターニングラインの外側０．５ｍｍのさらに外側の部分１５を全周にわたって、Ｘ―Ｙステージと、独自に開発したZ軸方向の微小調整が可能な平面回転歯を有する研磨機を用いて、約２５μｍの深さで研磨を行った。即ち、金属電極層６、ＺｎＯ層、ａ−Ｓｉ層４および酸化錫膜２の膜厚全体を除去するとともに、ガラス基板１の表面部分を除去した。加工速度は３．５ｍ/分であった。   Next, a polishing machine having an XY stage and a plane rotation tooth that can be finely adjusted in the Z-axis direction, which was originally developed, is used on the entire outer periphery 15 of the patterning line, which is 0.5 mm outside. Then, polishing was performed at a depth of about 25 μm. That is, the entire thickness of the metal electrode layer 6, the ZnO layer, the a-Si layer 4, and the tin oxide film 2 was removed, and the surface portion of the glass substrate 1 was removed. The processing speed was 3.5 m / min.

その後、前述した配線用の位置１４に半田メッキ銅箔からなるバスバー電極１６を形成して、電極取り出しのための配線を行った。この電極１６はストリングに平行となっている。   Thereafter, a bus bar electrode 16 made of solder-plated copper foil was formed at the wiring position 14 described above, and wiring for electrode extraction was performed. The electrode 16 is parallel to the string.

以上のように構成されるセルをモジュール化するために、ＥＶＡシートとフッ素系フィルムからなる保護フィルム８を真空ラミネータを用いて被覆して封止し、シリコーン樹脂９を充填し、かつ端子の形成とフレーム付けを行った。   In order to modularize the cell configured as described above, a protective film 8 made of an EVA sheet and a fluorine-based film is covered and sealed with a vacuum laminator, filled with a silicone resin 9, and a terminal is formed. And framed.

このようにして得た太陽電池モジュールについて、１００ｍＷ／ｃｍ2 のＡＭ１．５ソーラーシミュレーターを用いて、電流電圧特性を測定した。その結果、測定された太陽電池の特性は、短絡電流１２４０Ａ、開放電圧４４．２Ｖ、曲線因子０．６８、最大出力３７．３Ｗであった。 About the solar cell module obtained in this way, 100 mW / cm 2 The current-voltage characteristics were measured using an AM1.5 solar simulator. As a result, the measured characteristics of the solar cell were a short-circuit current of 1240 A, an open-circuit voltage of 44.2 V, a fill factor of 0.68, and a maximum output of 37.3 W.

次に、取り出し端子のプラスマイナス両極を電気的に短絡させ、端子とフレーム間に１５００Ｖを印加して抵抗値を測定し、１００ＭΩ以上であることを確認した。   Next, the positive and negative electrodes of the extraction terminal were electrically short-circuited, 1500 V was applied between the terminal and the frame, the resistance value was measured, and it was confirmed that it was 100 MΩ or more.

最後に、このモジュールを水中に１５分間浸した後、上述した抵抗値を測定したが、やはり１００ＭΩ以上であることが確認された。   Finally, after immersing this module in water for 15 minutes, the above-mentioned resistance value was measured, and it was confirmed that it was 100 MΩ or more.

実施例2
裏面金属層をレーザーパターニングした後に、研磨機の代わりにマスクとブラスト洗浄機を用いて、基板周辺の透明導電膜層、半導体層、裏面金属層、および基板表面を取り除いた以外は、実施例１と全く同様にして、太陽電池モジュールを作製し、同様の試験を行った。 Example 2
Example 1 except that after the backside metal layer was laser-patterned, the transparent conductive film layer, the semiconductor layer, the backside metal layer, and the substrate surface around the substrate were removed using a mask and a blast cleaning machine instead of the polishing machine. A solar cell module was produced in the same manner as described above, and the same test was performed.

マスクにはＳＵＳ板を用い、ブラストの平均粒径は約４０μｍであり、手動で操作して周辺部の機械的エッチングを行った。得られた特性は、実施例１とほぼ同じであり、短絡電流１２４０ｍＡ、開放電圧４４．２Ｖ、曲線因子０．６８、最大出力３７．３Ｗであった。また、取り出し端子とフレーム間の抵抗値は、浸水前後でいづれも１００ＭΩ以上であった。   An SUS plate was used as a mask, and the average particle size of the blast was about 40 μm. The peripheral portion was mechanically etched by manual operation. The obtained characteristics were almost the same as in Example 1. The short-circuit current was 1240 mA, the open-circuit voltage was 44.2 V, the fill factor was 0.68, and the maximum output was 37.3 W. Further, the resistance value between the takeout terminal and the frame was 100 MΩ or more before and after the flooding.

比較例
基板周辺の透明導電膜層、半導体層、裏面金属層、および基板表面を取り除かなかった以外は、実施例１と全く同様にして、図２に示すような太陽電池モジュールを作製し、同様の試験を行った。 Comparative Example A solar cell module as shown in FIG. 2 was prepared in the same manner as in Example 1 except that the transparent conductive film layer, the semiconductor layer, the back metal layer, and the substrate surface around the substrate were not removed. The test was conducted.

得られた太陽電池の特性は、短絡電流１２４０ｍＡ、開放電圧４３．１Ｖ、曲線因子０．６８、最大出力３６．３であり、実施例１、２とそれほど変らなかった。しかし、取り出し端子とフレーム間の抵抗値は、浸水前で８００ｋΩ、浸水後で１５ｋΩであり、実施例１、２と比べてかなり低い値であった。   The characteristics of the obtained solar cell were a short-circuit current of 1240 mA, an open-circuit voltage of 43.1 V, a fill factor of 0.68, and a maximum output of 36.3, which were not so different from those of Examples 1 and 2. However, the resistance value between the take-out terminal and the frame was 800 kΩ before the water immersion and 15 kΩ after the water immersion, which was a considerably low value compared to Examples 1 and 2.

本発明における実施例の結果では、フレームと端子間の絶縁抵抗値はいずれも１００ＭΩ以上であり、浸水試験によってもこの値をクリヤーしていることがわかる。一方、本発明によらない比較例では太陽電池としては十分な電流電圧特性が得られているにもかかわらず、絶縁抵抗という意味では、本実施例に大きく見劣りがする結果となった。   From the results of the examples of the present invention, it can be seen that the insulation resistance value between the frame and the terminal is 100 MΩ or more, and this value is cleared also by the water immersion test. On the other hand, in the comparative example not according to the present invention, although sufficient current-voltage characteristics were obtained as a solar cell, the result of the present example was greatly inferior to the present example in terms of insulation resistance.

実施例１に係る薄膜太陽電池モジュールの断面図。1 is a cross-sectional view of a thin film solar cell module according to Example 1. FIG. 比較例に係る薄膜太陽電池モジュールの断面図。Sectional drawing of the thin film solar cell module which concerns on a comparative example. 図１及び図２に示す薄膜太陽電池モジュールの平面図。The top view of the thin film solar cell module shown in FIG.1 and FIG.2.

符号の説明Explanation of symbols

１…ガラス基板、２…酸化錫膜、３…透明電極スクライブ線、４…ａ―Ｓｉ層、５…半導体スクライブ線、６…金属電極層、７…裏面電極スクライブ線、８…保護フィルム、９…シリコーン樹脂、１１ａ，１１ｂ…両端のストリング、１２…ストリング分離用加工部、１３…レーザー絶縁分離線、１４…配線部、１５…研磨部、１６…バスバー電極。   DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... Tin oxide film, 3 ... Transparent electrode scribe line, 4 ... a-Si layer, 5 ... Semiconductor scribe line, 6 ... Metal electrode layer, 7 ... Back electrode scribe line, 8 ... Protective film, 9 DESCRIPTION OF SYMBOLS: Silicone resin, 11a, 11b ... String of both ends, 12 ... String separation processing part, 13 ... Laser insulation separation line, 14 ... Wiring part, 15 ... Polishing part, 16 ... Busbar electrode.

Claims (6)

透光性基板上に形成された、透明電極層、光半導体層および金属層の少なくとも一部を光ビームによる加工によって複数のセルに分離し、相互に電気的に集積化してなり、端子及びフレームが取り付けられた薄膜太陽電池モジュールであって、前記透光性基板の周辺部における、前記透明電極層、前記光半導体層および前記金属層は機械的に除去されており、前記端子とフレーム間に１５００Ｖの電圧を印加したときの抵抗値が１００ＭΩ以上であることを特徴とする薄膜太陽電池モジュール。   A transparent electrode layer, an optical semiconductor layer, and a metal layer formed on a light-transmitting substrate are separated into a plurality of cells by processing with a light beam, and are electrically integrated with each other. In which the transparent electrode layer, the optical semiconductor layer, and the metal layer are mechanically removed at the periphery of the translucent substrate, and between the terminal and the frame. A thin-film solar cell module having a resistance value of 100 MΩ or more when a voltage of 1500 V is applied. 前記透明電極層、前記光半導体層および前記金属層の機械的な除去が、表面研磨法により行われたことを特徴とする請求項１に記載の薄膜太陽電池モジュール。   The thin film solar cell module according to claim 1, wherein the transparent electrode layer, the optical semiconductor layer, and the metal layer are mechanically removed by a surface polishing method. 前記透明電極層、前記光半導体層および前記金属層の機械的な除去が、１００μm以下の微粒子の吹き付けによる機械的なエッチング法により行われたことを特徴とする請求項１に記載の薄膜太陽電池モジュール。   2. The thin film solar cell according to claim 1, wherein the transparent electrode layer, the optical semiconductor layer, and the metal layer are mechanically removed by a mechanical etching method by spraying fine particles of 100 μm or less. module. 機械的な除去は前記透光性基板の表面に対しても行われ、機械的に除去された前記透光性基板、前記透明電極層、前記光半導体層および前記金属層の合計の深さが、5μmないし１００μmであることを特徴とする請求項２または３に記載の薄膜太陽電池モジュール。   Mechanical removal is also performed on the surface of the translucent substrate, and the total depth of the translucent substrate, the transparent electrode layer, the optical semiconductor layer, and the metal layer mechanically removed is The thin film solar cell module according to claim 2, wherein the thin film solar cell module is 5 μm to 100 μm. 機械的に除去された前記透光性基板、前記透明電極層、前記光半導体層および前記金属層の合計の深さが、１０μmないし２５μmであることを特徴とする請求項２または３に記載の薄膜太陽電池モジュール。   4. The total depth of the translucent substrate, the transparent electrode layer, the optical semiconductor layer, and the metal layer mechanically removed is 10 μm to 25 μm. 5. Thin film solar cell module. 前記光半導体層がシリコンを主成分とすることを特徴とする請求項１ないし５のいずれかの項に記載の薄膜太陽電池モジュール。   The thin-film solar cell module according to claim 1, wherein the optical semiconductor layer contains silicon as a main component.
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