JP2007234391A5 - - Google Patents

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Publication number
JP2007234391A5
JP2007234391A5 JP2006054429A JP2006054429A JP2007234391A5 JP 2007234391 A5 JP2007234391 A5 JP 2007234391A5 JP 2006054429 A JP2006054429 A JP 2006054429A JP 2006054429 A JP2006054429 A JP 2006054429A JP 2007234391 A5 JP2007234391 A5 JP 2007234391A5
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JP
Japan
Prior art keywords
light
display device
pixel electrode
insulating film
electroluminescent display
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JP2006054429A
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Japanese (ja)
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JP2007234391A (en
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Priority to JP2006054429A priority Critical patent/JP2007234391A/en
Priority claimed from JP2006054429A external-priority patent/JP2007234391A/en
Publication of JP2007234391A publication Critical patent/JP2007234391A/en
Publication of JP2007234391A5 publication Critical patent/JP2007234391A5/ja
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Claims (9)

透明導電材料よりなる画素電極と、光透過性陰極と、前記画素電極と前記陰極との間に狭持されるエレクトロルミネッセンス層を少なくとも含む機能層と、からなる発光素子と、
前記画素電極の光取出し方向と逆側に形成される、少なくとも可視範囲の波長の光を吸収する材料からなる光吸収絶縁膜と
前記光吸収絶縁膜の前記光取出し方向と逆側に形成される、前記発光素子の発光を制御する薄膜トランジスタと、
前記発光素子の前記光取出し方向側に形成される、前記エレクトロルミネッセンス層の励起光に対応する波長範囲の光を吸収するフィルタと、を具備することを特徴とするエレクトロルミネッセンス表示装置。
A light emitting device comprising a pixel electrode made of a transparent conductive material, a light-transmitting cathode, and a functional layer including at least an electroluminescence layer sandwiched between the pixel electrode and the cathode;
A light-absorbing insulating film made of a material that absorbs light having a wavelength in the visible range, which is formed on the opposite side of the light extraction direction of the pixel electrode ;
Is formed on the light extraction direction opposite side of the light-absorbing insulating layer, a thin film transistor for controlling the light emission of the light - emitting element,
The light extraction is formed in the direction, electroluminescent display device characterized by comprising a an absorption Sulf filter light in the wavelength range corresponding to the pumping light of the electroluminescent layer of the light emitting element.
前記フィルタは、前記発光素子上に形成される、赤色光、緑色光、青色光のうちのいずれかの一色の光を透過させるカラーフィルタと、前記カラーフィルタの周囲を遮光するブラックマトリクスと、からなることを特徴とする請求項1に記載のエレクトロルミネッセンス表示装置。   The filter includes: a color filter that is formed on the light emitting element and transmits light of any one color of red light, green light, and blue light; and a black matrix that blocks light around the color filter. The electroluminescent display device according to claim 1. 前記光吸収絶縁膜の上層に、少なくとも可視範囲の波長の光を吸収する材料からなる光吸収隔壁を具備することを特徴とする請求項1、又は2に記載のエレクトロルミネッセンス表示装置。   3. The electroluminescence display device according to claim 1, further comprising a light absorption partition made of a material that absorbs light having a wavelength in the visible range, at an upper layer of the light absorption insulating film. 前記フィルタは、前記陰極上に、封止膜のみを介して形成されていることを特徴とする請求項2、又は3に記載のエレクトロルミネッセンス表示装置。   The electroluminescence display device according to claim 2, wherein the filter is formed on the cathode through only a sealing film. 前記封止膜はシリコン窒化膜であることを特徴とする請求項4に記載のエレクトロルミネッセンス表示装置。   The electroluminescence display device according to claim 4, wherein the sealing film is a silicon nitride film. 前記光吸収絶縁膜と前記画素電極の間に反射板が形成されていないことを特徴とする請求項1から5のうちのいずれか1項に記載のエレクトロルミネッセンス表示装置。  6. The electroluminescence display device according to claim 1, wherein a reflection plate is not formed between the light absorption insulating film and the pixel electrode. 前記光吸収絶縁膜と前記画素電極の間に、屈折率が、前記光吸収絶縁膜の屈折率よりは大きく、前記画素電極の屈折率よりは小さい値である材料からなる薄膜を具備することを特徴とする請求項1からのうちのいずれか1項に記載のエレクトロルミネッセンス表示装置。 A thin film made of a material having a refractive index larger than the refractive index of the light absorbing insulating film and smaller than the refractive index of the pixel electrode is provided between the light absorbing insulating film and the pixel electrode. electroluminescent display device according to any one of claims 1, wherein 6. 前記光吸収絶縁膜の光学濃度が0.5から3.0の範囲内であることを特徴とする請求項1からのうちのいずれか1項に記載のエレクトロルミネッセンス表示装置。 Electroluminescent display device according to any one of claims 1 to 7, the optical density of the light-absorbing insulating layer is characterized in that in the range of from 0.5 to 3.0. 請求項1からのいずれかの1項に記載のエレクトロルミネッセンス表示装置を具備することを特徴とする電子機器。 An electronic apparatus characterized by comprising an electroluminescent display device according to any one of claims 1 to 8.
JP2006054429A 2006-03-01 2006-03-01 Electroluminescence display device and electronic apparatus Withdrawn JP2007234391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006054429A JP2007234391A (en) 2006-03-01 2006-03-01 Electroluminescence display device and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006054429A JP2007234391A (en) 2006-03-01 2006-03-01 Electroluminescence display device and electronic apparatus

Publications (2)

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JP2007234391A JP2007234391A (en) 2007-09-13
JP2007234391A5 true JP2007234391A5 (en) 2008-11-13

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Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
US8016631B2 (en) * 2007-11-16 2011-09-13 Global Oled Technology Llc Desiccant sealing arrangement for OLED devices
JP5286865B2 (en) * 2008-03-24 2013-09-11 カシオ計算機株式会社 Electroluminescent panel manufacturing method and electroluminescent panel
KR101060643B1 (en) * 2009-06-02 2011-08-31 박승민 Permeable display device for sound output with object-based position coordinate effect
JP5305267B2 (en) * 2009-08-04 2013-10-02 株式会社ジャパンディスプレイ Organic EL device
JP5476878B2 (en) 2009-09-14 2014-04-23 カシオ計算機株式会社 Manufacturing method of light emitting panel
KR102381895B1 (en) * 2014-11-20 2022-03-31 엘지디스플레이 주식회사 Organic light emitting display device and method of manufacturing the same
KR102350366B1 (en) * 2014-12-31 2022-01-11 엘지디스플레이 주식회사 Organic light emitting display device
JP2017174553A (en) * 2016-03-22 2017-09-28 株式会社ジャパンディスプレイ Display device
US10141544B2 (en) * 2016-08-10 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Electroluminescent display device and manufacturing method thereof
KR20180040185A (en) 2016-10-11 2018-04-20 삼성디스플레이 주식회사 Display device

Family Cites Families (8)

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JP2002033185A (en) * 2000-05-06 2002-01-31 Semiconductor Energy Lab Co Ltd Light emitting device and electric apparatus
CN101393967A (en) * 2000-08-23 2009-03-25 出光兴产株式会社 organic electroluminescent display device
JP2003017264A (en) * 2001-04-27 2003-01-17 Canon Inc Electroluminescent element and image display device
JP2003215556A (en) * 2002-01-25 2003-07-30 Toshiba Corp Liquid crystal display device
WO2003069957A1 (en) * 2002-02-12 2003-08-21 Idemitsu Kosan Co., Ltd. Organic el display and its production method
JP4103531B2 (en) * 2002-10-09 2008-06-18 松下電工株式会社 Organic electroluminescence device
JP4906033B2 (en) * 2004-05-20 2012-03-28 株式会社半導体エネルギー研究所 Light emitting device
JP2006032010A (en) * 2004-07-13 2006-02-02 Hitachi Displays Ltd Organic el display device

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