JP2007233885A - Inlet for rfid and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an RFID inlet which can efficiently perform data exchange in a wide frequency band by using a UHF and whose cost can be reduced. <P>SOLUTION: The inlet 1 for an RFID comprises an antenna 2 composed of thin aluminum foil and a semiconductor chip 3 mounted on the antenna 2. A pair of slits 5a and 5b are formed at a part of the antenna 2 so as to surround the semiconductor chip 3. The slits 5a and 5b respectively constitute the matching circuit part of the antenna 2. The antenna 2 is provided with two matching circuits, and the matching circuits are connected in parallel to thereby make resistance component of impedance of the antenna small, so that the impedance of the antenna 2 can be matched satisfactorily with the impedance of the semiconductor chip 3. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an inlet for RFID (Radio Frequency Identification), and more particularly to a technique that is effective when applied to an RFID inlet that reads and writes data in a non-contact manner using radio waves in the UHF (ultra-high frequency) band.

  RFID refers to an RFID tag in which an inlet composed mainly of an antenna mounted with a semiconductor chip is incorporated in an exterior, and is attached to an article. Between this RFID tag and a reader / writer (device for reading and writing data) This is a technology that automatically recognizes articles by exchanging data.

  Since the RFID stores data in a memory circuit in a semiconductor chip, there is an advantage that a large amount of data can be stored as compared with a tag using a barcode. In addition, the data stored in the memory circuit has an advantage that unauthorized tampering is difficult as compared with the data stored in the barcode. On the other hand, an RFID tag has a complicated inlet structure as compared with a tag using a bar code and the like, so its manufacturing cost is high, which is one factor hindering the spread of RFID.

As shown in, for example, Japanese Patent Application Laid-Open No. 2004-355469 (Patent Document 1), an inlet has a typical structure in which an antenna made of Cu (copper) foil is formed on one surface of a rectangular insulating film made of polyimide resin or the like. A semiconductor chip is mounted on this antenna. To manufacture this inlet, a Cu foil bonded to one surface of a long insulating film is etched to form a large number of antennas, and then a semiconductor chip is mounted on each antenna and sealed with a potting resin. Thereafter, when the insulating film is cut to separate a large number of antennas, an inlet is obtained.
JP 2004-355469 A

  Conventional RFIDs generally use a 2.45 GHz band microwave and an electromagnetic induction type using a 13.56 MHz band short wave. However, these RFIDs have a limited field of application because the communication distance between the RF tag and the reader / writer is short.

  Recently, RFID that uses radio waves in the UHF band, which can communicate over a relatively long distance (about 3 to 8 meters) and can read many tags at once, has been approved. Increased demand for applications is expected.

  However, in order to spread RFID, reducing the cost of the inlet is an important issue. In particular, RFID inlets that use UHF band radio waves have a larger antenna size than RFID inlets that use microwaves in the 2.45 GHz band and short waves in the 13.56 MHz band. Becomes higher.

  In addition, RFIDs that use radio waves in the UHF band are assigned specific frequencies in each country from among the available frequency bands in each country. For example, 950 MHz in Europe, 860 MHz in Europe, and 915 MHz in the United States. Yes.

  In this way, since RFID using radio waves in the UHF band uses radio waves with different frequencies for each country, for example, when an article with an RFID tag attached in country A is exported to country B, the radio waves used in country A If the difference between the frequency of the radio wave and the frequency of the radio wave used in country B is large, the communication distance in country B will be significantly shortened or it will be difficult to read data. Therefore, in RFID using UHF band radio waves, the development of an inlet capable of efficiently exchanging data in a wide frequency band is an important issue.

  An object of the present invention is to provide a technique for reducing the cost of an RFID inlet.

  Another object of the present invention is to provide an RFID inlet capable of efficiently exchanging data in a wide frequency band.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  The RFID inlet of the present invention includes an antenna made of a conductive foil and a semiconductor chip mounted on the antenna chip mounting portion and electrically connected to the antenna, and the conductor near the chip mounting portion. The foil is formed with first and second slits that each constitute a matching circuit of the antenna.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  By configuring the RFID inlet with only an antenna made of a conductive foil and a semiconductor chip mounted on the antenna, the number of parts of the RFID inlet can be reduced, and the cost can be reduced.

  By providing two matching circuits in the antenna of the RFID inlet, the impedance of the antenna and the impedance of the semiconductor chip can be matched well, so that data can be exchanged efficiently in a wide frequency band.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.

  The RFID inlet according to the present embodiment is used for an RFID that reads and writes data in a non-contact manner using UHF (ultra-high frequency) in the 860 MHz to 960 MHz band. In general, an RFID includes an RF tag and a reader / writer, and the RF tag includes an RFID inlet and a medium (label, card, etc.) for attaching the RFID tag to an article. RFID using UHF band radio waves can communicate over long distances compared to RFID using microwaves in the 2.45 GHz band and electromagnetic induction RFIDs using short waves in the 13.56 MHz band. In addition, since it has an advantage of being able to read many RF tags at the same time, the RFID is particularly suitable for applications such as physical distribution management.

  1 is an overall plan view showing an RFID inlet according to the present embodiment, FIG. 2 is an enlarged plan view showing a part of FIG. 1 (chip mounting portion and matching circuit portion), and FIG. FIG. 4 is a cross-sectional view taken along line AA of FIG. 3.

  The RFID inlet 1 according to the present embodiment includes an antenna 2 made of a rectangular thin metal foil and a semiconductor chip 3 mounted near the center of the antenna 2. The main surface (integrated circuit forming surface) of the semiconductor chip 3 is covered with a potting resin 4. The potting resin 4 is an insulating layer for protecting an integrated circuit formed on the main surface of the semiconductor chip 3, a connection portion between the semiconductor chip 3 and the antenna 2, and the like. Although not shown, the integrated circuit formed on the main surface of the semiconductor chip 3 includes a memory circuit such as an EEPROM (Electrically Erasable Programmable ROM), a control circuit that controls the memory circuit, and a transmission / reception circuit. . Various data relating to the article to which the RFID inlet 1 is attached are written in the memory circuit. In addition, data written in the memory circuit can be erased as necessary, and new data can be rewritten.

  The antenna 2 is made of an Al (aluminum) foil having an outer dimension with a thickness of about 40 μm to 50 μm, a length of 148 mm, and a width of 10 mm. The length of the antenna 2 is optimized so that UHF with a frequency of 950 MHz (952 MHz to 954 MHz) can be received most efficiently. In addition, since Al is cheaper than other metal foil materials such as Cu (copper) and Au (gold), the antenna 2 can be made of a thin Al foil to reduce the manufacturing cost of the RFID inlet 1. Can be reduced. Further, the RFID inlet 1 according to the present embodiment is composed only of an antenna 2 made of Al foil and a semiconductor chip 3 mounted on the antenna 2, and uses a medium such as a resin film that supports the antenna 2. Since there is no material, the material cost is very low.

  A pair of slits 5 a and 5 b are formed at the center of the antenna 2 so as to surround the semiconductor chip 3. FIG. 2 shows the Al foil portion of the antenna 2 by hatching so that the planar shape of the slits 5a and 5b can be easily seen. Each of the slits 5a and 5b has a substantially rectangular planar shape in which the vicinity of the chip mounting portion is narrowed and the shape and dimensions are the same. These slits 5 a and 5 b mainly constitute a matching circuit portion of the antenna 2. That is, the antenna 2 has a chip mounting portion on which the semiconductor chip 3 is mounted at the center, and a region where the slits 5a and 5b around the chip mounting portion are formed mainly functions as a matching circuit portion of the antenna 2. is doing. Further, the other area of the antenna 2 mainly functions as a receiving unit that receives UHF. As will be described later, the slits 5a and 5b are formed by punching a part of the Al foil constituting the antenna 2 with a press die. Further, a plurality of slits (openings) 5a and 5b constituting the antenna matching circuit are formed around the chip mounting portion, and the plurality of slits (openings) 5a and 5b are formed with slits (openings) 9. And communicated with each other.

  In order to read data mounted on the RFID inlet 1, first, a radio wave of 950 MHz is transmitted from the reader / writer antenna to the RFID inlet 1. Then, this radio wave is received by the antenna 2 of the RFID inlet 1 and rectified by the matching circuit unit, whereby electric power is generated in the antenna 2. Then, the integrated circuit of the semiconductor chip 3 operates by this power, and the data written in the memory circuit is output from the semiconductor chip 3 to the antenna 2. Next, when this data is transmitted from the antenna 2 to the reader / writer via a radio wave, the reader / writer receives this radio wave through the antenna and reads the data written in the memory circuit.

  In the RFID operation described above, the impedance of the antenna 2 needs to be well matched with the impedance of the semiconductor chip 3 in order to efficiently generate power from the radio wave received by the antenna 2 of the RFID inlet 1. Since the impedance of the antenna 2 is controlled by parameters such as the length and width of the slits 5a and 5b constituting the matching circuit section of the antenna 2 or the width of the antenna 2, good impedance matching between the antenna 2 and the semiconductor chip 3 is achieved. Therefore, optimization of the shapes and dimensions of the slits 5a and 5b is an important issue.

  The present inventor provided one slit (matching circuit) in the RFID inlet antenna and tried to match the impedance of the antenna and the semiconductor chip by changing the shape and dimensions of the slit. It has been found that it is difficult to match the impedance of the antenna and the impedance of the semiconductor chip well because of the large resistance component.

  As a countermeasure, in the present embodiment, two slits 5 a and 5 b are arranged side by side on the antenna 2 around the semiconductor chip 3. This is equivalent to connecting two matching circuits to the antenna 2 in parallel. As a result, since the resistance component of the impedance is smaller than that of an antenna having only one matching circuit, the impedance of the antenna 2 and the impedance of the semiconductor chip 3 can be matched well.

  FIG. 5 is a graph showing the results of measuring the frequency dependence of the voltage standing wave ratio (VSWR) characteristics of the antenna 2 of the RFID inlet 1 shown in FIGS. The horizontal axis of the graph indicates the frequency band (860 MHz to 960 MHz) that is allowed to be used in RFID among UHF. Each country is assigned a frequency that can be used in its own country within this frequency band. For example, 950 MHz (952 to 954 MHz) is assigned to Japan, 860 MHz is assigned to Europe, and 915 MHz is assigned to the United States. ing. Here, 1.0 is the best value for VSWR, which means that the impedance matching of the antenna is optimized for the frequency band. On the other hand, as the impedance matching of the antenna deviates from the frequency band, the VSWR gradually increases away from 1.0. However, if the antenna has a VSWR of 2.0 or less, practical communication characteristics are good. It is said that can be obtained.

  As shown in the graph, the antenna 2 of the present embodiment designed on the assumption that a 950 MHz radio wave is used has a VSWR at 950 MHz of nearly 1.0. However, even when the frequency of the radio wave gradually moved away from 950 MHz, the increase in VSWR was small, and a stable VSWR of 2.0 or less was exhibited in a wide frequency band from 860 MHz to 960 MHz. Thus, it has been found that the antenna 2 of the present embodiment can be used in the entire frequency band (860 MHz to 960 MHz) in which RFID can be used. Therefore, for example, when an RFID inlet 1 in which the data is written is attached to an article and exported to Europe from Japan, a reader / writer manufactured on the assumption that it is used at a frequency (860 MHz) assigned to Europe is used. Data regarding this article can be read. As described above, the RFID inlet 1 of the present embodiment can be applied not only to articles distributed in a specific country but also to articles exported overseas. As described above, the impedance of the antenna 2 varies depending on the length and width of the slits 5a and 5b constituting the matching circuit unit, the width of the antenna 2, and the like. Therefore, the optimal shapes and dimensions of the slits 5a and 5b are not limited to the shapes and dimensions shown in FIGS.

  FIG. 6 is an enlarged plan view showing the main surface of the semiconductor chip 3 mounted at the center of the antenna 2. The semiconductor chip 3 is made of single crystal silicon, and has an outer dimension of a square having a side of 1.2 mm. On the main surface of the semiconductor chip 3, two Au bumps 6 a and 6 b that are electrically connected to an integrated circuit in the semiconductor chip 3 are formed. These Au bumps 6a and 6b are arranged in the vicinity of one side of the semiconductor chip 3 and arranged side by side along this one side. The Au bumps 6a and 6b are external terminals of the semiconductor chip 3, and one (Au bump 6a) constitutes a power supply terminal and the other (Au bump 6b) constitutes a GND terminal. The Au bumps 6a and 6b are formed using, for example, a well-known electrolytic plating method, and the height thereof is, for example, about 15 μm.

  Dummy Au bumps 7a and 7b that are not electrically connected to the integrated circuit in the semiconductor chip 3 are disposed in the vicinity of the side opposite to the one side where the Au bumps 6a and 6b are disposed. The dummy Au bump 7a and the dummy Au bump 7b are arranged side by side along the opposing sides. The diameter and height of the dummy Au bumps 7a and 7b are the same as the diameter and height of the Au bumps 6a and 6b. As will be described later, the antenna 2 and the Au bumps 6 a and 6 b are electrically connected by an ultrasonic pressure bonding method. At this time, the dummy Au bumps 7 a and 7 b are also connected to the antenna 2 at the same time. Since the Au bumps 6 a and 6 b are arranged side by side along one side of the semiconductor chip 3, the semiconductor chip 3 is inclined with respect to the antenna 2 when the antenna 2 and the Au bumps 6 a and 6 b are electrically connected. In this state, the connection is easy, and this causes a decrease in the connection reliability between the antenna 2 and the Au bumps 6a and 6b. Therefore, when dummy Au bumps 7a and 7b are provided in the vicinity of the side opposite to one side where the Au bumps 6a and 6b are arranged, and the Au bumps 6a and 6b and the dummy Au bumps 7a and 7b are connected to the antenna 2 at the same time. Since the inclination of the semiconductor chip 3 is prevented, the connection reliability between the antenna 2 and the Au bumps 6a and 6b is improved. As described above, the dummy Au bumps 7a and 7b are provided to securely connect the antenna 2 and the Au bumps 6a and 6b.

  Further, as shown in the drawing, the Au bump 6a constituting the power supply terminal of the semiconductor chip 3 and the Au bump 6b constituting the GND terminal are arranged relatively close to each other. This is because if the distance between the Au bump 6a and the Au bump 6b is increased, a capacitance is formed between the two and the electric resistance increases, so that the characteristics of the integrated circuit deteriorate. In such a case, it is desirable to arrange the dummy Au bumps 7a and 7b as far apart as possible. In this way, the four straight lines connecting the two Au bumps 6a and 6b, the dummy Au bump 7a, and the dummy Au bump 7b arranged close to each other have a shape close to a triangle (actually a trapezoid). Therefore, the connection reliability between the Au bumps 6a and 6b and the dummy Au bumps 7a and 7b and the antenna 2 is improved as compared with the case where the dummy Au bumps 7a and 7b are arranged close to each other.

  Near the third side of the semiconductor chip, test Au bumps (test bump electrodes) 8 having a smaller diameter and height than the Au bumps 6a and 6b and the dummy Au bumps 7a and 7b are arranged. Yes. The test Au bumps 8 are arranged in a line along the third side, and the number thereof is, for example, eight. The test Au bump 8 is electrically connected to the integrated circuit in the semiconductor chip 3, but is not an external output terminal of the semiconductor chip 3. That is, the test Au bump 8 is a probe inspection terminal used to determine the quality of the integrated circuit in the final process (probe inspection process) of the so-called wafer process. The semiconductor chip 3 is diced by dicing the semiconductor wafer. It is not used after being separated into pieces.

  FIG. 3 shows a connection portion between the antenna 2 and the Au bumps 6 a and 6 b and the dummy Au bumps 7 a and 7 b formed on the semiconductor chip 3. Since the actual semiconductor chip 3 is connected to the antenna 2 with its main surface facing down, the Au bumps 6a and 6b and the dummy Au bumps 7a and 7b are on the back side of the semiconductor chip 3 shown in FIG. Is formed. As shown in this figure, the Au bump 6a and the Au bump 6b are separated from the antenna 2 in a region between the Au bump 6a constituting the power supply terminal of the semiconductor chip 3 and the Au bump 6b constituting the GND terminal. A narrow slit (opening) 9 is formed. Further, in order to prevent electrical contact between the test Au bumps 8 formed on the semiconductor chip 3 and the antenna 2, the test bump electrodes of the test bump electrodes are formed immediately below the Au bumps 8 (when the semiconductor chip is mounted on the chip mounting portion). A slit (opening) 10 is also formed in the antenna 2 immediately below) and in the vicinity of the antenna 2. As will be described later, the slits 9 and 10 are formed by punching a part of the Al foil constituting the antenna 2 with a press die. Further, when the semiconductor chip 3 is mounted on the antenna 2, the semiconductor chip 3 is arranged so that the straight line connecting the two Au bumps 6 a and 6 b and the center line (C) of the antenna 2 overlap each other. The characteristics of the inlet 1 can be improved.

  In order to manufacture the RFID inlet 1, first, a long Al foil 12 wound in a roll shape as shown in FIG. 7 is prepared. Then, a plurality of slits 9 and 10 are formed in the Al foil 12 at predetermined intervals by punching the Al foil 12 using a first press die 15 composed of an upper die and a lower die.

  Next, as shown in FIG. 8, after mounting the semiconductor chip 3 on the place (chip mounting portion) where the slits 9 and 10 of the Al foil 12 are formed, the resin coating nozzle 16 or the like is used to mount the semiconductor chip 3 on the semiconductor chip 3. The potting resin 4 is dropped on the substrate, and then the potting resin 4 is cured by heating or ultraviolet irradiation to seal the main surface of the semiconductor chip 3 with the potting resin 4. When mounting the semiconductor chip 3 on the chip mounting region of the Al foil 12, first, the main surface of the semiconductor chip 3 is directed downward, and in this state, the semiconductor chip 3 is positioned on the slits 9 and 10. At this time, the positional relationship between the semiconductor chip 3 and the slits 9 and 10 is as shown in FIG. Next, using the ultrasonic pressure bonding method, the Au bumps 6a and 6b and the Al foil 12 and the dummy Au bumps 7a and 7b and the Al foil 12 are electrically connected by Au-Al bonding.

  Next, as shown in FIG. 9, by using a second press die 16 composed of an upper die and a lower die, the Al foil 12 around the chip mounting area is punched out, thereby forming slits 5a and 5b (matching circuits). Form. The formation of the slits 5 a and 5 b using the press die 16 is performed after the semiconductor chip 3 is mounted on the chip mounting region of the Al foil 12. This is because, prior to the step of mounting the semiconductor chip 3 on the Al foil 12, when the slits 5a and 5b (matching circuits) are formed in the Al foil 12 around the chip mounting portion, the area of the Al foil 12 that supports the chip mounting portion. This is because when the Au bumps 6a and 6b and the Al foil 12 are connected by the ultrasonic pressure bonding method, the connection reliability between the two decreases.

  Next, as shown in FIG. 10, the antenna 2 is formed by punching out the Al foil 12 using a third press die 17 composed of an upper die and a lower die. Through the steps so far, the RFID inlet 1 including the antenna 2 and the semiconductor chip 3 mounted on the chip mounting portion is completed.

  As shown in FIG. 11, the completed RFID inlet 1 is affixed to the adhesive tape 18 prior to shipment. A chip insertion hole 20 is formed in the adhesive tape 18 in advance using a drilling jig 19 or the like, and the semiconductor chip 3 mounted on the antenna 2 when the RFID inlet 1 is attached to the adhesive tape 18. Is positioned inside the chip insertion hole 20 of the adhesive tape 18. In this way, it is possible to prevent an excessive stress from being applied to the semiconductor chip 3 when the pressure-sensitive adhesive tape 18 to which a large number of RFID inlets 1 are bonded is rolled up.

  Next, the adhesive tape 18 to which a large number of RFID inlets 1 are attached is rolled up (FIG. 12), and the adhesive tape 18 is placed in a shipping box 21 and shipped (FIG. 13).

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  In the above embodiment, the case where the present invention is applied to an RFID inlet that reads and writes data using UHF has been described. For example, an RFID inlet that uses a microwave of 2.45 GHz band or a short wave of 13.56 MHz band is used. It can also be applied to an electromagnetic induction type RFID inlet.

  The RFID inlet manufacturing method of the present invention can be applied to, for example, an antenna manufacturing process in an RFID inlet.

1 is an overall plan view showing an RFID inlet according to an embodiment of the present invention. FIG. 2 is an enlarged plan view illustrating a part (a chip mounting portion and a matching circuit portion) of FIG. 1. FIG. 3 is a plan view showing a part of FIG. 2 (in the vicinity of a chip mounting portion) further enlarged. It is sectional drawing along the AA line of FIG. It is a graph which shows the result of having measured the frequency dependence of the voltage standing wave ratio characteristic about the antenna of the RFID inlet which is one embodiment of this invention. It is a top view which expands and shows the main surface of the semiconductor chip mounted in the inlet for RFID which is one embodiment of this invention. It is a perspective view which shows the manufacturing method of the inlet for RFID which is one embodiment of this invention. FIG. 8 is a perspective view showing a method for manufacturing the RFID inlet continued from FIG. 7. FIG. 9 is a perspective view illustrating a method for manufacturing the RFID inlet continued from FIG. 8. FIG. 10 is a perspective view illustrating a method for manufacturing the RFID inlet continued from FIG. 9. It is a perspective view which shows the manufacturing method of the inlet for RFID following FIG. FIG. 12 is a perspective view illustrating a method for manufacturing the RFID inlet continued from FIG. 11. FIG. 13 is a perspective view illustrating a method for manufacturing the RFID inlet continued from FIG. 12.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Inlet for RFID 2 Antenna 3 Semiconductor chip 4 Potting resin 5a, 5b Slit 6a, 6b Au bump 7a, 7b Dummy Au bump 8 Au bump 9 for testing, 10 Slit 12 Al foil 15-17 Press mold 16 Resin coating Nozzle 18 Adhesive tape 19 Drilling jig 20 Chip insertion hole 21 Shipping box

Claims (22)

An antenna made of a conductive foil, and a semiconductor chip mounted on the antenna chip mounting portion and electrically connected to the antenna,
An RFID inlet, wherein the conductor foil in the vicinity of the chip mounting portion is formed with first and second slits that respectively constitute a matching circuit of the antenna.   The RFID inlet according to claim 1, wherein the first and second slits are laid out so that the two matching circuits are connected in parallel to each other.   2. The RFID inlet according to claim 1, wherein the conductor foil is an aluminum foil.   2. The RFID inlet according to claim 1, wherein the RFID inlet is used for an RFID that reads and writes data in a non-contact manner by using ultra-high frequency waves. On the main surface of the semiconductor chip, a first bump electrode constituting a power supply terminal of a circuit formed on the semiconductor chip and a second bump electrode constituting a GND terminal of the circuit are formed,
The conductor foil of the chip mounting portion is divided into two by a third slit formed in a part thereof,
In the semiconductor chip, one of the two divided conductor foils and the first bump electrode are electrically connected, and the other of the two divided conductor foils and the second bump electrode are electrically connected. 2. The RFID inlet according to claim 1, wherein the RFID inlet is flip-chip mounted so as to be connected. The first and second bump electrodes are formed in the vicinity of the first side of the semiconductor chip,
First and second dummy bump electrodes that are not electrically connected to a circuit formed on the semiconductor chip are formed in the vicinity of the second side opposite to the first side of the semiconductor chip. ,
6. The RFID inlet according to claim 5, wherein the first and second dummy bump electrodes are electrically connected to the conductor foil of the chip mounting portion.   In the main surface of the semiconductor chip, a distance between the first dummy bump electrode and the second dummy bump electrode is larger than a distance between the first bump electrode and the second bump electrode. The RFID inlet according to claim 6. On the main surface of the semiconductor chip, a bump electrode for a test electrically connected to a circuit formed on the semiconductor chip is formed,
6. The RFID inlet according to claim 5, wherein a fourth slit is formed in the conductive foil in a region facing the test bump electrode and a region in the vicinity thereof.   The planar shape of the antenna made of the conductive foil is a rectangle, and the semiconductor chip has the first bump electrode and the second bump electrode formed on the main surface of one short side of the antenna. 6. The RFID inlet according to claim 5, wherein the RFID inlet is mounted on a center line connecting the center and the center of the other short side. A method of manufacturing an RFID inlet, wherein a semiconductor chip is mounted on an antenna made of a conductive foil, and a slit forming a matching circuit of the antenna is formed in the conductive foil in the vicinity of the semiconductor chip,
(A) preparing a conductor foil having a larger area than the conductor foil constituting the antenna;
(B) forming a plurality of chip mounting portions on the large area conductive foil by punching a part of the large area conductive foil with a first press die;
(C) electrically connecting each of the semiconductor chips and the conductive foil by flip-chip mounting a semiconductor chip on each of the plurality of chip mounting portions formed on the large-area conductive foil; ,
(D) sealing a main surface of the semiconductor chip mounted on each of the plurality of chip mounting portions with a potting resin;
(E) After the step (d), the antenna matching circuit is provided in the vicinity of each of the plurality of chip mounting portions by punching a part of the large-area conductor foil with a second press die. Forming a slit to be configured; and
(F) After the step (e), a step of forming the antenna by punching out a part of the large-area conductor foil with a third press die, Production method.   11. The slit according to claim 10, wherein the slit includes a first slit and a second slit, and two matching circuits connected in parallel to each other are formed by the first and second slits. RFID inlet manufacturing method.   The RFID conductor inlet manufacturing method according to claim 10, wherein the conductor foil is an aluminum foil.   The electrical connection between the semiconductor chip and the conductor foil is performed by ultrasonic pressure bonding between an Au bump formed on a main surface of the semiconductor chip and the aluminum foil. RFID inlet manufacturing method. A method of manufacturing an RFID inlet, wherein a semiconductor chip is mounted on an antenna made of a conductive foil, and a slit forming a matching circuit of the antenna is formed in the conductive foil in the vicinity of the semiconductor chip,
(A) preparing a conductor foil having a chip mounting portion;
(B) A semiconductor having a main surface, a circuit formed on the main surface, a first bump electrode constituting a power supply terminal of the circuit, and a second bump electrode constituting a GND terminal of the circuit Preparing a chip;
(C) forming a first slit in a part of the chip mounting portion;
(D) The semiconductor chip is interposed between the first bump electrode and the second bump electrode so that the first slit is disposed between the first bump electrode and the second bump electrode. Mounting on the chip mounting portion,
(E) sealing the main surface of the semiconductor chip, the first bump electrode, the second bump electrode, and a part of the chip mounting portion;
(F) forming a second slit constituting the matching circuit of the antenna around the chip mounting portion;
(G) separating the RFID inlet from the conductor foil, and a method for manufacturing the RFID inlet.   A plurality of the second slits constituting the matching circuit of the antenna are formed around the chip mounting portion, and the plurality of the two slits communicate with each other via the first slit. The RFID inlet manufacturing method according to claim 14, wherein the RFID inlet is formed.   15. The RFID inlet manufacturing method according to claim 14, wherein the first slit and the second slit are formed by punching with a press die.   15. The RFID inlet manufacturing method according to claim 14, wherein the conductor foil is an aluminum foil.   15. The RFID inlet manufacturing method according to claim 14, wherein the RFID inlet is used for an RFID that reads and writes data in a non-contact manner by using ultra high frequency waves.   15. The RFID inlet manufacturing method according to claim 14, wherein the first bump electrode and the second bump electrode are electrically connected by an ultrasonic pressure bonding method. The first and second bump electrodes are formed in the vicinity of the first side of the semiconductor chip,
First and second dummy bump electrodes that are not electrically connected to a circuit formed on the semiconductor chip are formed in the vicinity of the second side opposite to the first side of the semiconductor chip. ,
15. The RFID inlet manufacturing method according to claim 14, wherein the first and second dummy bump electrodes are electrically connected to the conductor foil of the chip mounting portion.   The semiconductor chip has a test bump electrode, and when the semiconductor chip is mounted on the chip mounting portion, a third slit is formed in a conductor foil located immediately below the test bump electrode. The method for manufacturing an RFID inlet according to claim 14.   The second slit has a fourth slit and a fifth slit, and two matching circuits connected in parallel to each other are formed by the fourth and fifth slits. Item 15. A method for manufacturing an RFID inlet according to Item 14.

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