JP2007227480A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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JP2007227480A
JP2007227480A JP2006044447A JP2006044447A JP2007227480A JP 2007227480 A JP2007227480 A JP 2007227480A JP 2006044447 A JP2006044447 A JP 2006044447A JP 2006044447 A JP2006044447 A JP 2006044447A JP 2007227480 A JP2007227480 A JP 2007227480A
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semiconductor light
light emitting
emitting device
recess
reflecting plate
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Japanese (ja)
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Tamotsu Jitosho
保 地頭所
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Toshiba Corp
Toshiba Electronic Device Solutions Corp
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Toshiba Corp
Toshiba Discrete Semiconductor Technology Corp
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Priority to JP2006044447A priority Critical patent/JP2007227480A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that has sufficient reliability. <P>SOLUTION: The semiconductor light-emitting device is provided with a casing 12 having a recess 11 a reflecting plate 15 which is placed on a bottom face of the recess 11 by providing a gap 13 in between the side walls of the recess 11, formed into a shape of being widened toward the opening side of the recessed part 11, and has a movable part movable in a side-wall direction of the recessed part; a semiconductor light-emitting element 16 placed on the bottom face of the recessed part 11, and surrounded by the reflecting plate 15; a wiring 17 for electrically connecting the semiconductor light-emitting element 16 to the outside; and a resin 18 filled inside the reflecting plate 15. A thermal stress caused by a thermal expansion coefficient difference between the casing 12 and the resin 18 due to heating during mounting is relaxed by providing a slit 14 to the reflecting plate 15. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device.

半導体発光装置、なかでも可視発光ダイオード（ＬＥＤ）は、フルカラーディスプレイ、交通・信号機器、車載用途などに幅広く用いられている。
半導体発光装置の外囲器としては、従来の砲弾型のＬＥＤに加えて、基板に端子孔を設けることなく直接実装できる表面実装型のＬＥＤも多く使用されている。 Semiconductor light-emitting devices, especially visible light-emitting diodes (LEDs), are widely used in full-color displays, traffic / signal equipment, in-vehicle applications, and the like.
As an envelope of a semiconductor light emitting device, in addition to a conventional bullet-type LED, a surface-mount type LED that can be directly mounted without providing a terminal hole in a substrate is also frequently used.

この種の代表的なＬＥＤは、中央部に末広がり状の凹部が形成された筐体と、筺体の凹部の底面に露出した一対の電極リードと、一方の電極リード上に載置された半導体発光素子と、半導体発光素子を他方の電極リードに電気的に接続するワイヤと、筺体の凹部内に充填され、半導体発光素子を保護する透明樹脂とを具備している。   A typical LED of this type is a case in which a concave portion having a divergent shape is formed at the center, a pair of electrode leads exposed on the bottom surface of the concave portion of the housing, and a semiconductor light emitting device mounted on one of the electrode leads An element, a wire that electrically connects the semiconductor light emitting element to the other electrode lead, and a transparent resin that fills the recess of the housing and protects the semiconductor light emitting element.

筺体の凹部は半導体発光素子を収納するとともに、末広がり状の側壁は半導体発光素子からの光を上方に導出する反射板として機能している。   The concave portion of the housing accommodates the semiconductor light emitting element, and the diverging side wall functions as a reflector that guides light from the semiconductor light emitting element upward.

然しながら、従来の半導体発光装置は、筺体、透明樹脂、電極リードの熱膨張係数が異なっている。中でも透明樹脂の熱膨張係数が大きいために、筺体から透明樹脂が剥離する問題がある。   However, the conventional semiconductor light emitting device has different thermal expansion coefficients of the casing, the transparent resin, and the electrode lead. Especially, since the thermal expansion coefficient of the transparent resin is large, there is a problem that the transparent resin peels from the casing.

透明樹脂の剥離に伴って、ボンディングワイヤの切断、半導体発光素子の破壊、光取り出し効率の低下、耐環境性の低下などの不良が発生し、十分な信頼性が得られないという問題がある。特に、−４０℃から+８５℃で動作保証が求められる車載用途においては、十分な信頼性を確保することが困難である。   When the transparent resin is peeled off, defects such as cutting of the bonding wire, destruction of the semiconductor light emitting element, reduction of light extraction efficiency, and deterioration of environment resistance occur, and there is a problem that sufficient reliability cannot be obtained. In particular, it is difficult to ensure sufficient reliability in an in-vehicle application that requires operation guarantee at −40 ° C. to + 85 ° C.

これに対して、筐体と樹脂との熱膨張係数の違いにより筐体から樹脂が剥離しないように、樹脂と筐体との接着力を高めた構造を有する半導体発光装置が知られている（例えば特許文献１参照。）。   On the other hand, there is known a semiconductor light emitting device having a structure in which the adhesive force between the resin and the casing is enhanced so that the resin does not peel from the casing due to the difference in thermal expansion coefficient between the casing and the resin ( For example, see Patent Document 1.)

特許文献１に開示された半導体発光装置は、底面から表面に向かって断面積が小さくなるように形成した凹部を有する筐体と、筐体の凹部に沿って形成された電極上に導通搭載された半導体発光素子と、凹部内に充填された樹脂封止とを有している。   The semiconductor light emitting device disclosed in Patent Document 1 is conductively mounted on a housing having a recess formed so that a cross-sectional area decreases from the bottom surface to the surface, and an electrode formed along the recess of the housing. A semiconductor light emitting device and a resin seal filled in the recess.

実装時の加熱により、樹脂には筐体と樹脂との熱膨張係数の違いに起因して筐体から剥離するように熱応力が働くが、筐体表面に向かって断面積が小さくなる凹部の内面に拘束されて接着力が高められるようにして、樹脂が筐体から剥離するのを防止している。   Due to the heating at the time of mounting, thermal stress acts on the resin so that it peels from the housing due to the difference in thermal expansion coefficient between the housing and the resin, but the cross-sectional area decreases toward the housing surface. Resin is prevented from peeling from the casing by being restrained by the inner surface to increase the adhesive force.

然しながら、特許文献１に開示された半導体発光装置は、凹部が底面から筐体の表面に向かって断面積が小さくなるように形成されているので、凹部の側壁に入射した光を上方に導出する反射板として機能しなくなるという問題がある。
特開２００１−１２７３４５号公報 However, in the semiconductor light emitting device disclosed in Patent Document 1, since the concave portion is formed so that the cross-sectional area decreases from the bottom surface to the surface of the housing, the light incident on the side wall of the concave portion is led upward. There is a problem that it does not function as a reflector.
JP 2001-127345 A

本発明は、十分な信頼性を有する半導体発光装置を提供する。   The present invention provides a semiconductor light emitting device having sufficient reliability.

本発明の一態様の光半導体装置は、凹部を有する筐体と、前記凹部の側壁との間に隙間を設けて前記凹部の底面に載置されるとともに、前記凹部の開口側に向かって末広がり状で、且つ前記凹部の側壁方向に可動する可動部を有する反射板と、前記凹部の底面に載置され、前記反射板に囲まれた半導体発光素子と、前記半導体発光素子を外部に電気的に接続するための接続導体と、前記反射板の内部に充填された樹脂とを具備することを特徴としている。   The optical semiconductor device of one embodiment of the present invention is placed on the bottom surface of the recess with a gap provided between the housing having the recess and the side wall of the recess, and widens toward the opening side of the recess. And having a movable part movable in the direction of the side wall of the recess, a semiconductor light-emitting element placed on the bottom surface of the recess and surrounded by the reflector, and electrically connecting the semiconductor light-emitting element to the outside It is characterized by comprising a connection conductor for connecting to a resin and a resin filled in the reflection plate.

本発明によれば、十分な信頼性を有する半導体発光装置が得られる。   According to the present invention, a semiconductor light emitting device having sufficient reliability can be obtained.

以下、本発明の実施例について図面を参照しながら説明する。   Embodiments of the present invention will be described below with reference to the drawings.

本発明の実施例１に係る光半導体装置について図１および図２を用いて説明する。図１は半導体発光装置を示す図で、図１（ａ）はその平面図、図１（ｂ）は図１（ａ）のＡ−Ａ線に沿って切断し矢印方向に眺めた断面図、図２は反射板を示す斜視図である。   An optical semiconductor device according to Example 1 of the present invention will be described with reference to FIGS. FIG. 1 is a diagram showing a semiconductor light emitting device, FIG. 1 (a) is a plan view thereof, FIG. 1 (b) is a cross-sectional view taken along the line AA of FIG. FIG. 2 is a perspective view showing the reflector.

本実施例は、可動部として反射板の側壁に末広がり方向のスリットを形成した場合の例である。   The present embodiment is an example in the case where a slit in the end spreading direction is formed on the side wall of the reflector as the movable portion.

図１に示すように、本実施例の半導体発光装置１０は、凹部１１を有する筐体１２と、凹部１１の側壁との間に隙間１３を設けて凹部１１の底面に載置されるとともに、凹部１１の開口側に向かって末広がり状で、且つ末広がり方向にスリット１４を有する反射板１５と、反射板１５に囲まれて凹部１１の底面に載置された半導体発光素子１６と、半導体発光素子１６を外部に電気的に接続するためのワイヤ（接続導体）１７と、反射板１５の内部に充填された樹脂１８とを具備している。   As shown in FIG. 1, the semiconductor light emitting device 10 of the present embodiment is placed on the bottom surface of the recess 11 with a gap 13 between the housing 12 having the recess 11 and the side wall of the recess 11. A reflecting plate 15 having a divergent shape toward the opening side of the recess 11 and having a slit 14 in the diverging direction; a semiconductor light emitting device 16 surrounded by the reflecting plate 15 and placed on the bottom surface of the recess 11; and a semiconductor light emitting device A wire (connection conductor) 17 for electrically connecting 16 to the outside and a resin 18 filled in the reflection plate 15 are provided.

更に、半導体発光装置１０は、一端部１９ａ、２０ａが凹部１１の底面に露出し、他端部１９ｂ、２０ｂが筐体１２の側面から外部に延伸し、離間して対向するリード配線１９、２０（接続導体）を有している。   Furthermore, in the semiconductor light emitting device 10, one end portions 19a and 20a are exposed at the bottom surface of the concave portion 11, and the other end portions 19b and 20b extend outward from the side surface of the housing 12, and are spaced apart and facing the lead wirings 19 and 20. (Connection conductor).

図２に示すように、反射板１５は凹部１１の底面から凹部１１の開口側に向かって末広がりの円錐状である。スリット１４は円錐状の反射板１５の下端部１５ｂから上端部１５ａに向かい、反射板１５の外周に沿って均等に複数配置されている。   As shown in FIG. 2, the reflection plate 15 has a conical shape that spreads from the bottom surface of the recess 11 toward the opening side of the recess 11. A plurality of slits 14 are arranged uniformly along the outer periphery of the reflecting plate 15 from the lower end portion 15b of the conical reflecting plate 15 toward the upper end portion 15a.

筐体１２は円錐状の反射板１５を挿入可能な円柱状の凹部１１を有している。反射板１５の上部は円柱状の凹部１１の側壁と近接し、反射板１５の下部は凹部１１の側壁と離間しているので、隙間１３が確保される。   The housing 12 has a cylindrical recess 11 into which a conical reflector 15 can be inserted. Since the upper part of the reflection plate 15 is close to the side wall of the cylindrical recess 11 and the lower part of the reflection plate 15 is separated from the side wall of the recess 11, the gap 13 is secured.

半導体発光素子１６は、例えばＩｎＧａＡｌＰを発光層とする可視ＬＥＤであり、導電性接着剤（図示せず）を介してリード配線１９の一端部（マウントベッド）１９ａに接合されている。半導体発光素子１６の上面電極は金ワイヤ１７を介してリード配線２０の一端部２０ａに接続されている。   The semiconductor light emitting element 16 is a visible LED having, for example, InGaAlP as a light emitting layer, and is bonded to one end portion (mount bed) 19a of the lead wiring 19 via a conductive adhesive (not shown). The upper surface electrode of the semiconductor light emitting element 16 is connected to one end portion 20 a of the lead wiring 20 through the gold wire 17.

反射板１５の内部には半導体発光素子１６の発光波長に対して透明な樹脂１８、例えばシリコン樹脂が反射板１５の上面に達するまで充填され、半導体発光素子１６およびワイヤ１７を機密封止している。   The inside of the reflector 15 is filled with a resin 18 that is transparent to the emission wavelength of the semiconductor light emitting element 16, for example, silicon resin, until it reaches the upper surface of the reflector 15, and the semiconductor light emitting element 16 and the wire 17 are sealed. Yes.

半導体発光装置１０を基板に実装するときの加熱により樹脂１８が膨張すると、樹脂１８は底面および側面が拘束されているので、その反作用として樹脂１８を上方向に持ち上げるような応力が発生する。
この応力が過大になると、樹脂１８が反射板１５から剥離してワイヤ１７の断線、半導体発光素子１６の破壊などの問題が生じる。 When the resin 18 expands due to heating when the semiconductor light emitting device 10 is mounted on the substrate, the bottom surface and side surface of the resin 18 are constrained, and as a reaction, stress that lifts the resin 18 upward is generated.
When this stress becomes excessive, the resin 18 is peeled off from the reflecting plate 15, causing problems such as disconnection of the wire 17 and destruction of the semiconductor light emitting element 16.

しかし、反射板１５の下部にはスリット１４が形成され、且つ反射板１５の背部には隙間１３が確保されているので、樹脂１８の熱膨張により反射版１５の下部が外側に押し広げられることにより、樹脂１８の熱膨張による応力を緩和することが可能である。   However, since the slit 14 is formed in the lower part of the reflecting plate 15 and the gap 13 is secured in the back part of the reflecting plate 15, the lower part of the reflecting plate 15 is pushed outward by the thermal expansion of the resin 18. Thus, the stress due to the thermal expansion of the resin 18 can be relaxed.

その結果、反射板１５からの樹脂１８の剥離、ワイヤ１７の断線、および半導体発光素子１６の破壊等の発生を防止し、十分な信頼性を有する半導体発光装置１０が得られる。   As a result, peeling of the resin 18 from the reflecting plate 15, disconnection of the wire 17, destruction of the semiconductor light emitting element 16 and the like can be prevented, and the semiconductor light emitting device 10 having sufficient reliability can be obtained.

図３はスリット１４を有する反射板１５の効果を、従来の筐体と一体に形成された反射板と比較して示す模式図で、図３（ａ）が本実施例の場合、図３（ｂ）が従来例の場合である。   FIG. 3 is a schematic diagram showing the effect of the reflector 15 having the slits 14 in comparison with a reflector integrally formed with a conventional casing. FIG. b) is a case of a conventional example.

図３（ａ）に示すように、本実施例では、樹脂１８が膨張すると、膨張した樹脂１８により反射板１５を横方向に押す力が生じる。
ここで、反射板１５の下部にスリット１４が形成され、且つ反射板１５の背部には隙間１３が確保されているので、反射板１５の下部は外側に押し広げられて、外側に反り出す。 As shown in FIG. 3A, in this embodiment, when the resin 18 expands, a force that pushes the reflecting plate 15 in the lateral direction is generated by the expanded resin 18.
Here, since the slit 14 is formed in the lower part of the reflecting plate 15 and the gap 13 is secured in the back part of the reflecting plate 15, the lower part of the reflecting plate 15 is pushed outward and warps outward.

その結果、樹脂１８による熱応力が緩和され、反射板１５から樹脂１８が剥離し、ワイヤ１７の断線、半導体発光素子１６の破壊等に至る故障を防止することができる。   As a result, the thermal stress due to the resin 18 is relieved, and the resin 18 is peeled from the reflecting plate 15, so that it is possible to prevent a failure that leads to disconnection of the wire 17, destruction of the semiconductor light emitting element 16, or the like.

一方、図３（ｂ）に示すように、従来例では、反射板３０は筐体３１と一体に形成されている。
樹脂１８が膨張すると、膨張した樹脂１８により反射板３０を横方向に押す力が生じるが、膨張した樹脂１８は反射板３０の底面および側面で拘束されるので、反射板３０を横方向に押す力に対して反作用として、反射板３０の内側に向かう力が働く。 On the other hand, as shown in FIG. 3B, in the conventional example, the reflector 30 is formed integrally with the casing 31.
When the resin 18 expands, a force that pushes the reflecting plate 30 in the lateral direction is generated by the expanded resin 18. However, since the expanded resin 18 is restrained by the bottom surface and the side surface of the reflecting plate 30, the reflecting plate 30 is pushed in the lateral direction. As a reaction against the force, a force directed toward the inside of the reflecting plate 30 works.

その結果、樹脂１８は反射板３０の上面から盛り上がり、反射板３０から樹脂１８が剥離し、ワイヤ１７の断線、半導体発光素子１６の破壊等に至る故障が生じる恐れがある。   As a result, the resin 18 swells from the upper surface of the reflecting plate 30, and the resin 18 peels off from the reflecting plate 30, and there is a possibility that a failure that leads to disconnection of the wire 17, destruction of the semiconductor light emitting element 16, or the like may occur.

従って、樹脂１８による熱応力を均等に分散するために、スリット１４を反射板１５の外周に沿って均等に配置することが望ましい。   Therefore, it is desirable to arrange the slits 14 evenly along the outer periphery of the reflector 15 in order to evenly distribute the thermal stress due to the resin 18.

また、反射板１５の機械的強度が維持できる範囲内であれば、スリット１４の数は多いほうが好ましく、スリット１４の長さは長いほうが好ましい。樹脂１８による熱応力の大きさ、具体的には、例えば樹脂１８の体積を考慮して適宜定めることができる。   Further, as long as the mechanical strength of the reflector 15 can be maintained, the number of slits 14 is preferably large, and the length of the slits 14 is preferably long. The magnitude of the thermal stress due to the resin 18, specifically, for example, can be appropriately determined in consideration of the volume of the resin 18, for example.

更に、スリット１４の幅は光を反射する機能を損なわない範囲内で、樹脂１８を反射板１５の内部に充填する際に、樹脂１８がスリット１４の隙間から外側に流出しないように樹脂１８の粘度や充填条件等を考慮して適宜定めることができる。   Further, the width of the slit 14 is within a range that does not impair the function of reflecting light, and when the resin 18 is filled into the reflection plate 15, the resin 18 is prevented from flowing out from the gap of the slit 14. It can be determined as appropriate in consideration of the viscosity and filling conditions.

図４（ａ）乃至図４（ｃ）は半導体発光装置１０の製造工程を順に示す断面図である。始に、図４（ａ）に示すように、例えば耐熱性樹脂のインジェクションモールドにより、円柱状の凹部１１を有する筺体１２を、リード配線１９、２０の一端部１９ａ、２０ａを凹部１１の底部に露出させ、他端部１９ｂ、２０ｂを筺体１２の側面から延伸するようにして形成する。リード配線１９、２０はリードフレームで構成されている。   4A to 4C are cross-sectional views sequentially showing the manufacturing process of the semiconductor light emitting device 10. First, as shown in FIG. 4A, the housing 12 having the cylindrical recess 11 is formed by, for example, heat-resistant resin injection molding, and the end portions 19a and 20a of the lead wirings 19 and 20 are placed on the bottom of the recess 11. The other end portions 19 b and 20 b are formed so as to extend from the side surface of the housing 12. The lead wires 19 and 20 are composed of a lead frame.

次に、図４（ｂ）に示すように、例えばアルミウムのプレス加工により形成した複数のスリット１４を有する円錐状の反射板１５を、筺体１２の円柱状の凹部１１内に挿入し、反射板１５の上端部１５ａを、例えば接着剤（図示せず）で筺体１２の上端部１２ａに固定する。   Next, as shown in FIG. 4B, for example, a conical reflector 15 having a plurality of slits 14 formed by pressing aluminum is inserted into the cylindrical recess 11 of the housing 12, and the reflector The upper end part 15a of 15 is fixed to the upper end part 12a of the housing 12 with an adhesive (not shown), for example.

これにより、円錐状の反射板１５の下部は筐体１２に対して全周フリーとなり、且つ隙間１３が確保される。   As a result, the lower part of the conical reflector 15 is free from the entire circumference with respect to the housing 12, and the gap 13 is secured.

次に、図４（ｃ）に示すように、リード配線１９のマウントベッド１９ａに接着剤（図示せず）を介して半導体発光素子１６を接合し、ワイヤ１７によりリード配線２０の一端２０ａに接続する。   Next, as shown in FIG. 4C, the semiconductor light emitting element 16 is bonded to the mount bed 19 a of the lead wiring 19 through an adhesive (not shown), and connected to one end 20 a of the lead wiring 20 by the wire 17. To do.

次に、反射板１５内に反射板１５の上端部１５ａまでシリコン樹脂１８を充填し、リード配線１９、２０の他端部１９ｂ、２０ｂをＬ字状に折り曲げることにより、図１に示す半導体発光装置１０が得られる。   Next, a silicon resin 18 is filled in the reflecting plate 15 up to the upper end portion 15a of the reflecting plate 15, and the other end portions 19b and 20b of the lead wirings 19 and 20 are bent into an L shape, thereby causing the semiconductor light emitting shown in FIG. Device 10 is obtained.

以上説明したように、本実施例の半導体発光装置１０は、凹部１１の側壁との間に隙間１３を設けて凹部１１の底面に載置されるとともに、凹部１１の開口側に向かって末広がり状で、且つ末広がり方向にスリット１４を有する反射板１５を有しているので、樹脂１８の熱膨張による応力を緩和することができる。   As described above, the semiconductor light emitting device 10 according to the present embodiment is placed on the bottom surface of the recess 11 with the gap 13 provided between the side wall of the recess 11 and is widened toward the opening side of the recess 11. In addition, since the reflecting plate 15 having the slits 14 in the divergent direction is provided, the stress due to the thermal expansion of the resin 18 can be relieved.

その結果、反射板１５から樹脂１８が剥離し、ワイヤ１７の断線、および半導体発光素子１６の破壊に至る故障の発生を防止し、十分な信頼性を有する半導体発光装置１０が得られる。   As a result, the resin 18 is peeled off from the reflecting plate 15 to prevent the occurrence of a failure that leads to the disconnection of the wire 17 and the destruction of the semiconductor light emitting element 16, and the semiconductor light emitting device 10 having sufficient reliability can be obtained.

ここでは、反射板１５を金属で形成した場合について説明したが、光の反射率の高い白色系の樹脂、例えば酸化チタン（ＴｉＯ２）をフィラーとして含む液晶ポリマーなどで形成しても構わない。
また、筐体１２を耐熱性樹脂のインジェクションモールドにより形成する場合について説明したが、セラミックス部材からなる基板を積層し、加圧低温焼結することにより形成しても構わない。
その場合に、リード配線１９、２０をメッキにより形成し、筐体１２をシート状の基台に一括して形成することもできる。 Here, the case where the reflecting plate 15 is formed of a metal has been described. However, it may be formed of a white resin having a high light reflectivity, for example, a liquid crystal polymer containing titanium oxide (TiO 2) as a filler.
Moreover, although the case where the housing | casing 12 was formed with the injection mold of a heat resistant resin was demonstrated, you may form by laminating | stacking the board | substrate which consists of ceramic members, and carrying out pressure low temperature sintering.
In that case, the lead wirings 19 and 20 can be formed by plating, and the housing 12 can be collectively formed on a sheet-like base.

図５は本発明の実施例２に係る半導体発光装置を示す平面図である。
本実施例において、上記実施例１と同一の構成部分には同一符号を付してその部分の説明は省略し、異なる部分について説明する。 FIG. 5 is a plan view showing a semiconductor light emitting device according to Embodiment 2 of the present invention.
In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.

本実施例が実施例１と異なる点は、可動部として反射板の側壁に末広がり方向に凹部の開口側から凹部の底面に向かうスリットを更に形成したことにある。   The difference between the present embodiment and the first embodiment is that a slit extending from the opening side of the recess to the bottom surface of the recess is further formed on the side wall of the reflector as the movable portion in the direction of the end.

即ち、図５に示すように、本実施例の半導体発光装置４０は、末広がり方向に凹部１１の底面から凹部１１の開口側に向かう第１のスリット４１と、凹部１１の開口側から凹部１１の底面に向かう第２のスリット４２とが形成された円錐状の反射板４３を具備している。   That is, as shown in FIG. 5, the semiconductor light emitting device 40 of this example includes a first slit 41 that extends from the bottom surface of the concave portion 11 toward the opening side of the concave portion 11 in the divergent direction, and the concave portion 11 from the opening side of the concave portion 11. A conical reflector 43 having a second slit 42 facing the bottom surface is provided.

第１のスリット４１および第２のスリット４２は、円錐状の反射板４３の周方向に沿って交互に均等に複数配置されている。   A plurality of first slits 41 and second slits 42 are alternately and evenly arranged along the circumferential direction of the conical reflector 43.

円錐状の反射板４３の上端部４３ａ（図示せず）と筺体１２の上端部１２ａは全周に渡って固定せず、周方向に離散的に固定することが好ましい。これにより、円錐状の反射板４３の上部も筐体１２に対してフリーとすることができる。   It is preferable that the upper end portion 43a (not shown) of the conical reflector 43 and the upper end portion 12a of the housing 12 are not fixed over the entire circumference but are discretely fixed in the circumferential direction. Thereby, the upper part of the conical reflector 43 can also be made free with respect to the housing 12.

その結果、半導体発光装置４０を基板に実装するときの加熱により樹脂１８が膨張すると、反射板４３の下部とともに反射板４３の上部でも樹脂１８による熱応力を緩和することが可能である。   As a result, when the resin 18 expands due to heating when the semiconductor light emitting device 40 is mounted on the substrate, the thermal stress due to the resin 18 can be relieved not only at the lower part of the reflecting plate 43 but also at the upper part of the reflecting plate 43.

従って、反射板４３から樹脂１８が剥離し、ワイヤ１７の断線、半導体発光素子１６の破壊等に至る故障の発生を防止することができる。   Therefore, the resin 18 is peeled off from the reflecting plate 43, and it is possible to prevent the occurrence of a failure that leads to the disconnection of the wire 17 or the destruction of the semiconductor light emitting element 16.

以上説明したように、本実施例の半導体発光装置４０は、反射板４３に第１のスリット４１および第２のスリット４２の両方を形成したので、樹脂１８による熱応力を更に低減できる利点がある。   As described above, the semiconductor light emitting device 40 of this embodiment has an advantage that the thermal stress due to the resin 18 can be further reduced because both the first slit 41 and the second slit 42 are formed in the reflector 43. .

本発明の実施例３に係る光半導体装置について図６および図７を用いて説明する。図６は半導体発光装置を示す平面図、図７は反射板を示す斜視図である。   An optical semiconductor device according to Example 3 of the present invention will be described with reference to FIGS. FIG. 6 is a plan view showing the semiconductor light emitting device, and FIG. 7 is a perspective view showing the reflector.

本実施例において、上記実施例１と同一の構成部分には同一符号を付してその部分の説明は省略し、異なる部分について説明する。
本実施例が実施例１と異なる点は、反射板の形状を円錐状から角錐状にしたことにある。 In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.
This embodiment differs from the first embodiment in that the shape of the reflector is changed from a conical shape to a pyramid shape.

即ち、図６に示すように、本実施例の半導体発光装置５０は、８角柱状の凹部５１を有する筐体５２と、末広がり方向に凹部５１の底面から凹部５１の開口側に向かうスリット５３が形成された８角錐状の反射板５４を具備している。   That is, as shown in FIG. 6, the semiconductor light emitting device 50 of the present example includes a housing 52 having an octagonal columnar recess 51 and a slit 53 that extends from the bottom surface of the recess 51 toward the opening side of the recess 51 in the end-spreading direction. The reflecting plate 54 having an octagonal pyramid shape is formed.

図７に示すように、反射板５４は凹部５１の底面から凹部５１の開口側に向かって末広がりの８角錐状であり、スリット５３は８角錐状の反射板５４の下端部５４ｂから上端部５４ａに向かい、反射板５４の外周に沿って均等に複数配置されている。   As shown in FIG. 7, the reflecting plate 54 has an octagonal pyramid shape that widens from the bottom surface of the recess 51 toward the opening side of the recess 51, and the slit 53 extends from the lower end 54 b to the upper end 54 a of the octagonal pyramid reflecting plate 54. A plurality of them are evenly arranged along the outer periphery of the reflecting plate 54.

８角錐状の反射板５４は８角柱状の凹部５１の側壁との間に隙間を設けて凹部５１の底面に載置されている。   The octagonal pyramid-shaped reflecting plate 54 is placed on the bottom surface of the recess 51 with a gap provided between the octagonal prism-shaped recess 51 and the side wall thereof.

筐体の外辺と反射板との最小距離Ｌｍｉｎを一定とした場合に、８角錐状の反射板５４を収納する筺体５２は、円錐状の反射板１５を収納する筺体１２に比べて２ΔＬだけサイズが小さくなる。   When the minimum distance Lmin between the outer side of the housing and the reflector is constant, the housing 52 that houses the octagonal pyramid-shaped reflector 54 is only 2ΔL compared to the housing 12 that houses the conical reflector 15. The size becomes smaller.

その結果、リード配線１９、２０の長さを短縮することができるとともに、半導体発光装置１０よりサイズの小さい半導体発光装置５０を得ることが可能である。   As a result, the length of the lead wires 19 and 20 can be shortened, and the semiconductor light emitting device 50 smaller in size than the semiconductor light emitting device 10 can be obtained.

以上説明したように、本実施例によれば、反射板５２の形状を８角錐状にしたので、筐体の外辺と反射板との最小距離Ｌｍｉｎが一定の場合に、円錐状の反射板１５に比べて、半導体発光装置５０のサイズを小さくできる利点がある。   As described above, according to the present embodiment, since the shape of the reflecting plate 52 is an octagonal pyramid, when the minimum distance Lmin between the outer side of the housing and the reflecting plate is constant, the conical reflecting plate Compared to 15, the semiconductor light emitting device 50 can be reduced in size.

ここでは、反射板５２が８角錐状である場合について説明したが、その他の角錐状、例えば６角錐状であっても構わない。   Here, the case where the reflecting plate 52 has an octagonal pyramid shape has been described, but another pyramid shape, for example, a hexagonal pyramid shape, may be used.

図８は本発明の実施例４に係る半導体発光装置を示す平面図である。
本実施例において、上記実施例３と同一の構成部分には同一符号を付してその部分の説明は省略し、異なる部分について説明する。 FIG. 8 is a plan view showing a semiconductor light-emitting device according to Example 4 of the present invention.
In the present embodiment, the same components as those in the third embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.

本実施例が実施例３と異なる点は、末広がり方向に凹部の開口側から凹部の底面に向かってスリットを更に形成したことにある。   The difference between the present embodiment and the third embodiment is that a slit is further formed from the opening side of the recess toward the bottom surface of the recess in the direction of expansion.

即ち、図８に示すように、本実施例の半導体発光装置６０は、末広がり方向に凹部５１の底面から凹部５１の開口側に向かう第１のスリット６１と、凹部５１の開口側から凹部５１の底面に向かう第２のスリット６２とが形成された８角錐状の反射板６３を具備している。   That is, as shown in FIG. 8, the semiconductor light emitting device 60 of this example includes a first slit 61 that extends from the bottom surface of the concave portion 51 toward the opening side of the concave portion 51 in the divergent direction, and the concave portion 51 from the opening side of the concave portion 51. It has an octagonal pyramid-shaped reflecting plate 63 formed with a second slit 62 directed to the bottom surface.

８角錐状の反射板６３は８角柱状の凹部５１の側壁との間に隙間を設けて凹部５１の底面に載置されている。第１のスリット６１および第２のスリット６２は、８角錐状の反射板６３の周方向に沿って交互に均等に複数配置されている。   The octagonal pyramid-shaped reflector 63 is placed on the bottom surface of the recess 51 with a gap provided between the octagonal prism-shaped recess 51 and the side wall thereof. A plurality of the first slits 61 and the second slits 62 are alternately and evenly arranged along the circumferential direction of the octagonal pyramid-shaped reflector 63.

半導体発光装置６０を基板に実装するときの加熱により樹脂１８が膨張すると、８角錐状の反射板６３の下部とともに反射板６３の上部でも樹脂１８による熱応力を緩和することが可能である。   When the resin 18 expands due to heating when the semiconductor light emitting device 60 is mounted on the substrate, the thermal stress due to the resin 18 can be relieved not only at the lower part of the octagonal pyramid-like reflector 63 but also at the upper part of the reflector 63.

その結果、反射板６３から樹脂１８が剥離し、ワイヤ１７の断線、半導体発光素子１６の破壊等に至る故障を防止することができる。   As a result, the resin 18 is peeled off from the reflecting plate 63, and it is possible to prevent a failure that leads to disconnection of the wire 17 or destruction of the semiconductor light emitting element 16.

以上説明したように、本実施例の半導体発光装置６０は、８角錐状の反射板６３に第１のスリット６１および第２のスリット６２の両方を形成したので、樹脂１８による熱応力を更に低減できる利点がある。   As described above, in the semiconductor light emitting device 60 of the present embodiment, since both the first slit 61 and the second slit 62 are formed in the octagonal pyramid-shaped reflector 63, the thermal stress due to the resin 18 is further reduced. There are advantages you can do.

本発明の実施例５に係る光半導体装置について図９および図１０を用いて説明する。図９は半導体発光装置を示す図で、図９（ａ）はその平面図、図９（ｂ）は図９（ａ）のＢ−Ｂ線に沿って切断し矢印方向に眺めた断面図、図１０は反射板を示す斜視図である。   An optical semiconductor device according to Example 5 of the present invention will be described with reference to FIGS. FIG. 9 is a diagram showing a semiconductor light emitting device, FIG. 9A is a plan view thereof, FIG. 9B is a cross-sectional view taken along the line BB in FIG. FIG. 10 is a perspective view showing the reflector.

本実施例において、上記実施例１と同一の構成部分には同一符号を付してその部分の説明は省略し、異なる部分について説明する。   In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.

本実施例が実施例１と異なる点は、可動部として反射板の側壁に末広がり方向に延伸する凹部と凸部を周方向に交互に形成したことにある。   The present embodiment is different from the first embodiment in that concave portions and convex portions that extend in the end-spreading direction are alternately formed in the circumferential direction on the side wall of the reflector as a movable portion.

即ち、図９に示すように、本実施例の半導体発光装置７０は、側壁に末広がり方向に延伸する谷折部７１と山折部７２とが周方向に交互に形成された、所謂プリーツ状の反射板７３を具備している。   That is, as shown in FIG. 9, the semiconductor light emitting device 70 of this example has a so-called pleated reflection in which valley folds 71 and mountain folds 72 extending in the direction of diverging are alternately formed on the side wall in the circumferential direction. A plate 73 is provided.

図１０に示すように、反射板７３は凹部１１の底面から凹部１１の開口側に向かって末広がりの円錐状であり、末広がり方向に延伸する谷折部７１と山折部７２とが周方向に交互に形成されている。   As shown in FIG. 10, the reflector 73 has a conical shape that widens from the bottom surface of the recess 11 toward the opening side of the recess 11, and the valley folds 71 and the mountain folds 72 that extend in the diverging direction alternate in the circumferential direction. Is formed.

反射板７３は弾性に富んだ金属、例えば燐青銅の薄板をプレス加工することにより、谷折部７１と山折部７２と一括して形成することができる。   The reflector 73 can be formed together with the valley folds 71 and the mountain folds 72 by pressing a thin plate of a metal rich in elasticity, such as phosphor bronze.

半導体発光装置７０を基板に実装するときの加熱により樹脂１８が膨張すると、樹脂１８により反射板７３を横方向に押す力が生じる。これにより、反射板７３の谷折部７１が外側に押し広げられて、反射板７３の内径が増大する。   When the resin 18 expands due to heating when the semiconductor light emitting device 70 is mounted on the substrate, a force that pushes the reflection plate 73 in the lateral direction is generated by the resin 18. Thereby, the valley folding part 71 of the reflecting plate 73 is pushed outward, and the internal diameter of the reflecting plate 73 increases.

その結果、樹脂１８による熱応力が緩和されるので、反射板７３から樹脂１８が剥離し、ワイヤ１７の断線、半導体発光素子１６の破壊等に至る故障を防止することができる。   As a result, since the thermal stress due to the resin 18 is relieved, the resin 18 is peeled off from the reflecting plate 73, and it is possible to prevent a failure such as disconnection of the wire 17 or destruction of the semiconductor light emitting element 16.

また、加熱が終了して樹脂１８が元の状態に収縮した場合に、弾性力により反射板７３もそれに応じてもとのサイズに復元する。
従って、所謂プリーツ状の反射板７３では、所定の機械的強度を得るのに必要な反射板７３の厚さを低減することが可能である。 Further, when the heating is finished and the resin 18 contracts to the original state, the reflecting plate 73 is restored to its original size by the elastic force.
Therefore, in the so-called pleated reflector 73, it is possible to reduce the thickness of the reflector 73 necessary to obtain a predetermined mechanical strength.

以上説明したように、本実施例の半導体発光装置７０は、反射板７３に側壁に末広がり方向に延伸する谷折部７１と山折部７２とを周方向に交互に形成したので、反射板７３の厚さを低減できる利点がある。   As described above, in the semiconductor light emitting device 70 of the present embodiment, since the valley folds 71 and the mountain folds 72 that extend in the direction of expansion toward the side wall are alternately formed in the reflection plate 73 in the circumferential direction, There is an advantage that the thickness can be reduced.

ここでは、反射板７３が円錐状である場合について説明したが、角錐状であっても構わない。   Although the case where the reflecting plate 73 has a conical shape has been described here, it may have a pyramid shape.

本発明の実施例６に係る光半導体装置について図１１用いて説明する。図１１は半導体発光装置を示す図で、図１１（ａ）はその平面図、図１１（ｂ）は図１１（ａ）のＣ−Ｃ線に沿って切断し矢印方向に眺めた断面図である。   An optical semiconductor device according to Example 6 of the present invention will be described with reference to FIG. 11A is a plan view of the semiconductor light emitting device, and FIG. 11B is a sectional view taken along the line CC of FIG. 11A and viewed in the direction of the arrow. is there.

本実施例において、上記実施例１と同一の構成部分には同一符号を付してその部分の説明は省略し、異なる部分について説明する。   In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.

本実施例が実施例１と異なる点は、可動部として反射板の側壁が内側に張り出した凸部を形成したことにある。   The difference between the present embodiment and the first embodiment is that a convex portion in which the side wall of the reflecting plate protrudes inward is formed as the movable portion.

即ち、図１１に示すように、本実施例の半導体発光装置８０は、側壁が内側に張り出した凸部８１が市松状に複数形成された、所謂エンボス状の反射板８２を具備している。   That is, as shown in FIG. 11, the semiconductor light emitting device 80 of this example includes a so-called embossed reflecting plate 82 in which a plurality of convex portions 81 whose side walls protrude inward are formed in a checkered pattern.

反射板８２は凹部１１の底面から凹部１１の開口側に向かって末広がりの円錐状であり、弾性に富んだ金属、例えば燐青銅の薄板をプレス加工することにより、凸部８１と一括して形成することができる。   The reflecting plate 82 has a conical shape that spreads from the bottom surface of the concave portion 11 toward the opening side of the concave portion 11, and is formed together with the convex portion 81 by pressing a thin plate of a metal rich in elasticity, such as phosphor bronze. can do.

半導体発光装置８０を基板に実装するときの加熱により樹脂１８が膨張すると、樹脂１８により反射板８２を横方向に押す力が生じる。これにより、反射板８２の凸部８１に応力が集中し、凸部８１が優先的に外側に押し出される。   When the resin 18 expands due to heating when the semiconductor light emitting device 80 is mounted on the substrate, a force that pushes the reflection plate 82 in the lateral direction is generated by the resin 18. Thereby, stress concentrates on the convex part 81 of the reflecting plate 82, and the convex part 81 is pushed out preferentially.

その結果、樹脂１８による熱応力が緩和されるので、反射板８２から樹脂１８が剥離し、ワイヤ１７の断線、半導体発光素子１６の破壊等に至る故障を防止することができる。   As a result, since the thermal stress due to the resin 18 is relieved, the resin 18 is peeled from the reflecting plate 82, and it is possible to prevent a failure such as disconnection of the wire 17 or destruction of the semiconductor light emitting element 16.

また、加熱が終了して樹脂１８が元の状態に収縮した場合に、弾性力により凸部８１もそれに応じてもとのサイズに復元する。
従って、所謂エンボス状の反射板８２では、所定の機械的強度を得るのに必要な反射板８２の厚さを低減することが可能である。 Further, when the heating is finished and the resin 18 contracts to the original state, the convex portion 81 is restored to the original size by the elastic force.
Therefore, the so-called embossed reflector 82 can reduce the thickness of the reflector 82 necessary to obtain a predetermined mechanical strength.

以上説明したように、本実施例の半導体発光装置８０は、反射板８２の側壁が内側に張り出した凸部８１を複数形成したので、反射板８２の厚さを低減できる利点がある。   As described above, the semiconductor light emitting device 80 of the present embodiment has an advantage that the thickness of the reflecting plate 82 can be reduced because the plurality of convex portions 81 with the side wall of the reflecting plate 82 projecting inward are formed.

上述した実施例では、半導体発光装置が表面実装型の半導体発光装置の場合について説明したが、本発明はこれに限定されず、砲弾型の半導体発光装置に適用することもできる。   In the above-described embodiments, the case where the semiconductor light emitting device is a surface-mount type semiconductor light emitting device has been described. However, the present invention is not limited to this and can be applied to a bullet-type semiconductor light emitting device.

本発明の実施例１に係る半導体発光装置を示す図で、図１（ａ）はその平面図、図１（ｂ）は図１（ａ）のＡ−Ａ線に沿って切断し、矢印方向に眺めた断面図。BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the semiconductor light-emitting device based on Example 1 of this invention, FIG. 1 (a) is the top view, FIG.1 (b) cut | disconnects along the AA line of FIG. FIG. 本発明の実施例１に係る半導体発光装置の反射板を示す斜視図。1 is a perspective view showing a reflecting plate of a semiconductor light emitting device according to Example 1 of the invention. FIG. 本発明の実施例１に係る反射板の効果を従来例と比較して示す模式図。The schematic diagram which shows the effect of the reflecting plate which concerns on Example 1 of this invention compared with a prior art example. 本発明の実施例１に係る半導体発光装置の製造工程の要部を示す図。The figure which shows the principal part of the manufacturing process of the semiconductor light-emitting device which concerns on Example 1 of this invention. 本発明の実施例２に係る半導体発光装置を示す図。The figure which shows the semiconductor light-emitting device based on Example 2 of this invention. 本発明の実施例３に係る半導体発光装置を示す図。FIG. 6 is a diagram showing a semiconductor light emitting device according to Example 3 of the invention. 本発明の実施例３に係る半導体発光装置の反射板を示す斜視図。The perspective view which shows the reflecting plate of the semiconductor light-emitting device based on Example 3 of this invention. 本発明の実施例４に係る半導体発光装置を示す図。The figure which shows the semiconductor light-emitting device based on Example 4 of this invention. 本発明の実施例５に係る半導体発光装置を示す図で、図９（ａ）はその平面図、図９（ｂ）は図９（ａ）のＢ−Ｂ線に沿って切断し、矢印方向に眺めた断面図。9A and 9B are diagrams showing a semiconductor light emitting device according to Example 5 of the present invention, in which FIG. 9A is a plan view, and FIG. 9B is cut along the line BB in FIG. FIG. 本発明の実施例５に係る半導体発光装置の反射板を示す斜視図。The perspective view which shows the reflecting plate of the semiconductor light-emitting device based on Example 5 of this invention. 本発明の実施例６に係る半導体発光装置を示す図で、図１１（ａ）はその平面図、図１１（ｂ）は図１１（ａ）のＣ−Ｃ線に沿って切断し、矢印方向に眺めた断面図。FIG. 11A is a plan view of the semiconductor light emitting device according to Example 6 of the invention, and FIG. 11B is a cross-sectional view taken along the line CC in FIG. FIG.

符号の説明Explanation of symbols

１０、４０、５０、６０、７０、８０ 半導体発光装置
１１、５１ 凹部
１２、３１、５２ 筐体
１２ａ、１５ａ、５４ａ 上端部
１３ 隙間
１４、５３ スリット
１５、３０、４３、５４、６３、７３、８２ 反射板
１５ｂ、５４ｂ 下端部
１６ 半導体発光素子
１７ ワイヤ（接続導体）
１８ 樹脂
１９、２０ リード配線
４１、６１ 第１のスリット
４２、６２ 第２のスリット
７１ 谷折部
７２ 山折部
８１ 凸部 10, 40, 50, 60, 70, 80 Semiconductor light emitting device 11, 51 Recess 12, 31, 52 Case 12a, 15a, 54a Upper end 13 Gap 14, 53 Slit 15, 30, 43, 54, 63, 73, 82 Reflecting plates 15b and 54b Lower end 16 Semiconductor light emitting element 17 Wire (connection conductor)
18 Resin 19, 20 Lead wiring 41, 61 First slit 42, 62 Second slit 71 Valley fold 72 Mountain fold 81 Convex

Claims (5)

凹部を有する筐体と、
前記凹部の側壁との間に隙間を設けて前記凹部の底面に載置されるとともに、前記凹部の開口側に向かって末広がり状で、且つ前記凹部の側壁方向に可動する可動部を有する反射板と、
前記凹部の底面に載置され、前記反射板に囲まれた半導体発光素子と、
前記半導体発光素子を外部に電気的に接続するための接続導体と、
前記反射板の内部に充填された樹脂と、
を具備することを特徴とする半導体発光装置。 A housing having a recess;
A reflector having a gap between the recess and the side wall of the recess and mounted on the bottom surface of the recess and having a movable portion that is widened toward the opening side of the recess and is movable toward the side wall of the recess. When,
A semiconductor light emitting element placed on the bottom surface of the recess and surrounded by the reflector;
A connection conductor for electrically connecting the semiconductor light emitting element to the outside;
A resin filled in the reflector;
A semiconductor light emitting device comprising: 前記可動部が、前記反射板の側壁に前記凹部の底面から前記凹部の開口側に向かって形成された第１のスリットと、前記反射板の側壁に前記凹部の開口側から前記凹部の底面に向かって形成された第２のスリットの少なくともいずれかを有することを特徴とする請求項１に記載の半導体発光装置。   The movable portion includes a first slit formed on a side wall of the reflecting plate from a bottom surface of the concave portion toward an opening side of the concave portion, and a side wall of the reflecting plate from an opening side of the concave portion to a bottom surface of the concave portion. The semiconductor light emitting device according to claim 1, comprising at least one of second slits formed toward the front. 前記可動部が、前記反射板の側壁に前記末広がり方向に延伸し、周方向に交互に形成された凹部と凸部とを有することを特徴とする請求項１に記載の半導体発光装置。   2. The semiconductor light emitting device according to claim 1, wherein the movable portion has a concave portion and a convex portion that extend in the end spreading direction on the side wall of the reflecting plate and are alternately formed in the circumferential direction. 前記可動部が、前記反射板の側壁が内側に張り出した複数の凸部を有することを特徴とする請求項１に記載の半導体発光装置。   The semiconductor light-emitting device according to claim 1, wherein the movable portion includes a plurality of convex portions in which side walls of the reflector plate project inward. 前記反射板が円錐状、または多角錐状であることを特徴とする請求項１に記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein the reflecting plate has a conical shape or a polygonal pyramid shape.
JP2006044447A 2006-02-21 2006-02-21 Semiconductor light-emitting device Pending JP2007227480A (en)

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