JP2007218799A - Semiconductor magnetoresistive element and magnetic sensor module using the same - Google Patents

Semiconductor magnetoresistive element and magnetic sensor module using the same Download PDF

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JP2007218799A
JP2007218799A JP2006041340A JP2006041340A JP2007218799A JP 2007218799 A JP2007218799 A JP 2007218799A JP 2006041340 A JP2006041340 A JP 2006041340A JP 2006041340 A JP2006041340 A JP 2006041340A JP 2007218799 A JP2007218799 A JP 2007218799A
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magnetoresistive element
semiconductor magnetoresistive
semiconductor
lead frame
phase
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JP4754985B2 (en
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Hiromasa Gotou
Ichiro Shibazaki
広将 後藤
一郎 柴崎
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Asahi Kasei Electronics Co Ltd
旭化成エレクトロニクス株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the phase lag of output amplitude of a semiconductor magnetoresistive element used in detecting a rotating angle of a gear or the like, and to simplify a magnetic sensor module assembly by a significant amount. <P>SOLUTION: An azimuth-aligning groove 27 is formed along the outer periphery of the semiconductor magnetoresistive element, having two or more MR-sensor chips mounted, thereby improving the assembling accuracy for the outer case. Furthermore, a magnet insertion hole for inserting a magnet to be mounted on a rear surface is integrally formed, when sealing resin 25 is resin-formed. Furthermore, bending a leg 23 of an elongated lead frame eliminates a complex process of connecting a terminal of the semiconductor magnetoresistive element with a terminal pin, after it has been mounted once on a printed board. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor magnetoresistive element and a magnetic sensor module using the same, and more particularly to a magnetic sensor module for a magnetic encoder, which houses a semiconductor magnetoresistive element constituting the magnetic sensor and the magnetic sensor. The present invention relates to a semiconductor magnetoresistive element in which azimuth shift is eliminated by positioning with an external case, and a magnetic sensor module using the same.

  2. Description of the Related Art Conventionally, a magnetic sensor module in which a magnet is attached to the back surface of a semiconductor package in which a chip including a semiconductor magnetoresistive element forming a sensing portion is sealed with a resin is known.

  FIG. 14 is a cross-sectional view of a conventional semiconductor magnetoresistive element used for a magnetic encoder. This semiconductor magnetoresistive element is formed of a resin 19 filled with a semiconductor magnetoresistive element chip 1 die-bonded on a pedestal 2 of a lead frame and wire-bonded to a foot 3 of a lead frame with a gold wire 4 in an outer case 18. A bias magnet 9 is arranged on the back side of the semiconductor magnetoresistive element 8 which is formed and the lead frame foot 3 is bent. Further, a magnet for fixing the bias magnet 9 and the lead frame foot 3 is fixed. A structure constituted by the case 11 is provided.

  FIG. 15 is a perspective view of another conventional semiconductor magnetoresistive element used for a magnetic encoder. The output terminal of the semiconductor magnetoresistive element 8 formed by resin-molding the semiconductor magnetoresistive element chip is mounted on the printed board 13 by soldering and electrically connected by the output pin 10 and the connection wiring 12. It has a structure in which a bias magnet 9 and a magnet case 11 are arranged on the back side (see, for example, Patent Document 1).

  These semiconductor magnetoresistive elements are used in a magnetic encoder, and when a gear disposed in a vertical position space of a magnetic sensitive surface of the semiconductor magnetoresistive element rotates, the semiconductor magnetoresistive element is orthogonal to the semiconductor magnetoresistive element according to the unevenness of the gear. A sine wave output can be obtained by a change in the magnetic flux density.

  The general output waveform of a magnetic encoder is to output several types of signals at the same time, such as a phase A that is a sine wave, a phase B that is 90 ° out of phase, and a phase Z that detects one tooth at 360 °. Is required. In order to use it as a magnetic encoder, it is important to strictly control the phase difference of each output. Usually, in the case of a magnetic encoder using only the A phase and the B phase, the A phase and the B phase are simply set. Since it can be manufactured as one semiconductor magnetoresistive element chip, even when the semiconductor magnetoresistive element chip is mounted on the lead frame, the θ direction (azimuth) deviation between one semiconductor magnetoresistive element chip and the lead frame is reduced. If mounted in this manner, there will be no positional shift between the A phase and the B phase, and the phase shift of each output can be determined substantially at the design stage of the semiconductor magnetoresistive element.

  On the other hand, in a magnetic encoder having an A / B phase and a Z phase, it is necessary to separately form semiconductor magnetoresistive element chips having different A / B and Z phases on a lead frame or a printed circuit board. Needless to say, it is necessary to mount each semiconductor magnetoresistive element chip so that there is no deviation in the θ direction (azimuth), and further, an A / B phase semiconductor magnetoresistive element chip and a Z phase semiconductor. It is also important to arrange the magnetoresistive element chip so that there is no mounting shift in the gear rotation direction.

JP 2005-337866 A

  Usually, this type of semiconductor magnetoresistive element is used in a state of being inserted into an outer case. The entire outer case is made of a non-magnetic material such as aluminum die cast, stainless steel or brass, or the non-magnetic metal material (CAN cap) is used only for the part in contact with the semiconductor magnetoresistive element. What was produced with resin using is used.

  When semiconductor magnetoresistive elements are mounted on these outer cases, the magnet case is used as a guide in FIG. 14 for alignment with the outer case, or the edge of the printed circuit board is used as the inner shape of the outer case in FIG. The azimuth of the semiconductor magnetoresistive element was arranged by processing together.

  Factors that cause this azimuth misalignment are: 1) semiconductor magnetoresistive element mounting misalignment (mounting misalignment when the semiconductor magnetoresistive element chip is die-bonded on the lead frame; (2) misalignment between the gear and the outer case, and (3) misalignment between the outer case and the semiconductor magnetoresistive element.

  The above-mentioned factor 1) is defined by the performance of the die bonding apparatus, the mounting apparatus or the like. 2) is an element determined by the positional relationship between the pedestal to which the outer case is attached and the gear. Thus, in 1) and 2), the improvement of the mounting position shift of the semiconductor magnetoresistive element is uniquely determined. On the other hand, 3), when a semiconductor magnetoresistive element is mounted on the external case as described above, when a magnet case or a printed circuit board is used as a guide, between the semiconductor magnetoresistive element and the magnet case, Misalignment occurs due to the assembly accuracy between the resistance element and the printed circuit board and the displacement when mounted on the external case.

  As shown in FIG. 16, this semiconductor magnetoresistive element mounting deviation is assumed to be a positional deviation in the X and Y directions and an azimuth deviation in the θ direction, but the positional deviation in the X and Y directions is 2). As described above, when the outer case is attached to the base material, adjustment in one direction is possible, but alignment in the other direction is not possible. Further, there is a problem that the azimuth shift in the θ direction cannot be adjusted.

  When the mounting position in the X direction or the Y direction is deviated, problems such as a difference in output amplitude between the A / B phase and the Z phase or distortion in the output waveform occur. When there is an azimuth shift in the θ direction, there is a problem that a phase shift between the A phase / Z phase and a (90 ° + phase shift) between the B phase / Z phase occur.

  As described above, in the conventional manufacturing method, the alignment between the outer case and the semiconductor magnetoresistive element is performed using a part attached to the semiconductor magnetoresistive element such as a magnet case or a printed circuit board. There is a problem in that the mounting displacement and azimuth displacement of the element are affected by how to attach to the magnet case and how to mount the semiconductor magnetoresistive element on the printed circuit board.

  Furthermore, the conventional manufacturing method requires a large number of parts such as a substrate such as a printed circuit board, connection terminal pins, and a magnet storage case, and the number of man-hours for assembly as a semiconductor magnetoresistive element increases. There has been a problem that the manufacturing cost of the semiconductor magnetoresistive element has to be spent.

  The present invention has been made in view of such problems, and its purpose is to significantly increase the positional accuracy when mounting the semiconductor magnetoresistive element on the outer case, and to reduce the number of components to be configured. An object of the present invention is to provide a semiconductor magnetoresistive element having a structure capable of drastically reducing the number of steps and a magnetic sensor module using the same.

  The present invention has been made to achieve such an object. The invention according to claim 1 is characterized in that a plurality of semiconductor magnetoresistive element chips are die-bonded and wire-bonded on a lead frame. The semiconductor magnetoresistive element chip and the lead frame are integrally formed of a sealing resin so as to form a magnet insertion hole on the back surface of the lead frame, and an azimuth alignment portion is provided in the sealing resin. Features.

  The invention according to claim 2 is characterized in that, in the invention according to claim 1, a plurality of the azimuth alignment portions are provided on an outer peripheral portion of the sealing resin.

  The invention according to claim 3 is characterized in that, in the invention according to claim 1 or 2, the azimuth alignment portion has a groove or a protrusion.

  According to a fourth aspect of the present invention, in the first, second, or third aspect of the invention, the shape of the integral molding of the sealing resin is a circular resin on the semiconductor magnetoresistive element chip, and It is characterized by a two-stage shape.

  According to a fifth aspect of the present invention, there is provided the semiconductor magnetoresistive element according to any one of the first to fourth aspects, and an external case having a fitting portion fitted to the azimuth alignment portion. Features.

  According to a sixth aspect of the present invention, in the fifth aspect of the present invention, an insertion hole for inserting the semiconductor magnetoresistive element is provided in the outer case, and a plurality of the fitting portions are provided at a peripheral edge portion of the insertion hole. And positioning the semiconductor magnetoresistive element chip and the outer case by fitting the fitting portion to the azimuth alignment portion.

  The invention according to claim 7 is the invention according to claim 5 or 6, wherein the fitting portion has a protrusion or a groove.

  The invention according to claim 8 is the invention according to claim 5, 6 or 7, wherein the semiconductor magnetoresistive element inserted in the outer case is in front of the magnetic sensitive surface and the front surface of the insertion hole. A nonmagnetic metal member is provided on the surface.

  As described above, the present inventors have conducted extensive studies to solve the above-described problems of the present invention. As a result, in the semiconductor magnetoresistive element having the A / B phase and the Z phase, the A phase, the Z phase, and the B phase. Thus, the present invention has been completed by completing a semiconductor magnetoresistive element capable of eliminating a phase shift between the Z phase and the Z phase and achieving an unprecedented highly accurate magnetic encoder.

  The semiconductor magnetoresistive element of the present invention is formed by integrally molding a magnet case and resin molding when mounting two or more semiconductor magnetoresistive element chips on a lead frame using a die bonding apparatus and resin molding. Since the outer peripheral portion has a circumferential portion and a protrusion or a cutout, the alignment accuracy with the circular outer case can be remarkably improved.

  In addition, since the components in the outer case are only the semiconductor magnetoresistive element, the magnet, and the filling resin according to the present invention, and the number of components can be significantly reduced, man-hours and costs can be reduced. Further, since it is not necessary to consider the improvement of the mounting position accuracy of the semiconductor magnetoresistive element chip, the yield of the product can be improved.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a top view showing an embodiment (Example 1) of a semiconductor magnetoresistive element of the present invention, FIG. 2 is a bottom view of the semiconductor magnetoresistive element shown in FIG. 1, and FIG. FIG. 4 is a perspective view showing a state in which a semiconductor magnetoresistive element chip is mounted and wire bonding is performed, FIG. 4 is a perspective view of the semiconductor magnetoresistive element of the present invention as seen from the upper oblique direction, and FIG. 5 is shown in FIG. It is the perspective view which looked at the semiconductor magnetoresistive element of this invention from the lower diagonal direction.

  In the figure, reference numeral 21 is a semiconductor magnetoresistive element chip, 22 is a lead frame base, 23 is a lead frame leg, 24 is a gold wire, 25 is a sealing resin, 26 is a magnet insertion hole, and 27 is an azimuth alignment groove. Is shown.

  In the semiconductor magnetoresistive element of the present invention, a semiconductor magnetoresistive element chip 21 is die-bonded on a pedestal 22 of a lead frame, and the semiconductor magnetoresistive element chip 21 and a lead frame leg 23 are wire-bonded by a gold wire 24 and sealed. Resin molding is performed by the stop resin 25. A magnet insertion hole 26 for inserting a bias magnet is provided on the back side of the semiconductor magnetoresistive element having a structure in which the legs 23 of the lead frame are bent. A plurality of azimuth alignment grooves 27 are provided on the outer peripheral portion of the sealing resin 25. The azimuth alignment groove 27 constitutes a notch to be fitted with a protrusion provided on an outer case described later.

  In other words, the plurality of semiconductor magnetoresistive element chips 21 are die-bonded to the pedestal 22 of the lead frame and wire-bonded to the legs 23 of the lead frame, and the magnetoresistive element chip 21 and the lead frames 22 and 23 are The lead frames 22 and 23 are integrally formed with a sealing resin 25 so as to form a magnet insertion hole 26 on the back surface of the lead frames 22 and 23, and the sealing resin 25 is provided with an azimuth alignment groove 27.

  6 is a perspective view of the outer case housing the semiconductor magnetoresistive element of the present invention as viewed from the front, and FIG. 7 is a perspective view of the outer case shown in FIG. 6 as viewed from the rear. The semiconductor magnetoresistive element and the outer case constitute a magnetic sensor module of the present invention. In the figure, reference numeral 38 denotes an outer case, 40 denotes a metal part on the magnetic sensitive surface, 41 denotes a protrusion, 42 denotes a screw hole for attaching a base material, and 43 denotes a magnetoresistive element insertion hole.

  The material of the outer case 38 in the present invention may be formed by using a non-magnetic metal material such as aluminum die cast, brass, stainless steel, etc., and is located in front of the magnetic sensitive surface of the semiconductor magnetoresistive element. Only a part may be formed of a nonmagnetic material, and the other part may be formed of a resin or the like. In addition, the thickness of the metal portion in contact with the magnetosensitive surface of the semiconductor magnetoresistive element is preferably set to 0.3 mm or less in order to shorten the distance between the magnetosensitive surface of the semiconductor magnetoresistive element chip and the gear as much as possible.

  The shape of the nonmagnetic metal (metal part on the magnetic sensitive surface) 40 on the magnetic sensitive surface is most preferably a circular shape, but may be a saddle shape having a circular shape and a linear portion. Further, on the inner wall side of the metal portion 40 on the magnetosensitive surface, a protrusion 41 (which matches an azimuth alignment groove (notch) 27 (or protrusion) formed on the outer peripheral portion of the semiconductor magnetoresistive element is provided. Or a notch) is provided.

  The external shape of the semiconductor magnetoresistive element in the present invention is a shape in which the outer periphery of the resin mold is circular or has a shape having both a circular portion and a straight portion, and is aligned with the shape of the metal portion 40 on the magnetic sensitive surface of the outer case 38. By doing so, it is possible to minimize the mounting deviation. Further, a part of the outer peripheral portion in the present invention may have a recess processed into a concave shape for alignment, or a protrusion processed into a convex shape. The shape of the protrusion or recess is preferably a semicircle having a diameter of 10 mm or less. The size of the protrusion or recess is substantially the same as the size of the recess or protrusion of the outer case 38, so that the semiconductor magnetoresistive element can be inserted into the outer case 38 or connected to other fixing parts. This is very important for reducing the azimuth deviation and for facilitating the work and reducing the man-hours when manufacturing the magnetic encoder.

  Further, by forming the circular resin on the semiconductor magnetoresistive element chip into a two-stage shape, when the outer case 38 is put on the semiconductor magnetoresistive element, the distance between the lead frame foot 23 and the outer case 38 is increased. The effect of preventing contact between the outer case 38 and the surface of the semiconductor magnetoresistive element when the end of the semiconductor magnetoresistive element hits when the curvature of the nonmagnetic metal cover of the outer case 38 is large. There is.

  As the material of the lead frames 22 and 23 used in the semiconductor magnetoresistive element in the present invention, any metal may be used as long as it is non-magnetic, but copper or a copper alloy is generally used. . Pure copper such as oxygen-free copper, phosphor bronze, lead copper, zirconium copper, or the like may be used, but it is preferable to use a material that does not easily break when bent.

  As described above, in FIG. 3, the semiconductor magnetoresistive element chip is mounted on the lead frame and wire bonded, that is, the semiconductor magnetoresistive element chip is mounted on the pedestal 22 of the lead frame included in the scope of the present invention. Is shown, and the electrode pad is electrically connected by the gold wire 24. The thickness of the leg 23 of the lead frame will be described below with reference to FIG.

  The thickness A of the portion to be the lead frame foot 23 to which the gold wire 24 is connected is preferably 0.2 mm or more in order to bend the lead frame foot 23 and use the semiconductor magnetoresistive element chip 21 as a die. The portion B to be bonded is preferably 0.2 mm or less so that the distance from the bias magnet is as short as possible and a stronger magnetic flux density acts perpendicularly to the magnetic sensitive surface of the semiconductor magnetoresistive element.

  Further, the pedestal 22 of the lead frame on which the semiconductor magnetoresistive element chip 21 is mounted is not electrically connected to the electrode pads of the semiconductor magnetoresistive element chip 21, and other than the pedestal 22 of the lead frame, the semiconductor magnetoresistive element chip The number of the lead frame legs 23 is equal to or more than 21 electrode pads.

  As the sealing resin 25 of the semiconductor magnetoresistive element in the present invention, an epoxy-based, biphenyl-based, phenol-based, resin-based, or the like can be used, but by using a resin having a small expansion / contraction rate against an ambient temperature change, It is possible to reduce the problem of resin cracking due to a sudden change in the ambient temperature and the separation from the lead frames 22 and 23. Further, since the influence of the strain on the magnetic sensitive part on the surface of the semiconductor magnetoresistive element chip 21 is reduced, there is also an advantage that the element characteristic fluctuation due to the ambient temperature change can be reduced. With respect to the resin thickness at the time of molding, since the larger output amplitude from the semiconductor magnetoresistive element can be obtained by shortening the distance between the gear and the chip magnetosensitive surface, the surface of the semiconductor magnetoresistive element chip 21 can be obtained. The resin thickness is preferably 0.5 mm or less. Furthermore, since the output amplitude of the semiconductor magnetoresistive element can also be increased by bringing the bias magnet closer to the gear, the resin thickness on the back side of the pedestal 22 of the lead frame on which the semiconductor magnetoresistive element chip 21 is mounted is 0. .2 mm or less is preferable, and more preferably, there is no resin on the back surface side and the pedestal 22 of the lead frame is exposed.

  In addition, the shape of the mold resin viewed from the top surface of the semiconductor magnetoresistive element is circular, and a tie bar that supports the pedestal 22 of the lead frame is provided on the periphery of the circular mold resin and the metal cover of the semiconductor magnetoresistive element and the periphery If there is a possibility of connection to the electrical wiring, the tie bar part at the end of the mold resin may have one or several notches, but the depth of the notch depends on the metal part of the tie bar. What is necessary is just to be depressed so that it may not contact the surrounding metal part.

  As the bias magnet used in the semiconductor magnetoresistive element of the present invention, any of SmCo-based, NeFeB-based and ferrite-based magnets can be used, but by using a magnet having a residual magnetic flux density of 0.2 Tesla or more, Since the magnetoresistive change amount of the semiconductor magnetoresistive element increases in proportion to the electron mobility μ of the compound semiconductor thin film, it is preferable because a large output can be obtained.

  As the substrate for forming the semiconductor magnetoresistive element chip 21 in the present invention, it is preferable to use a semiconductor substrate such as Si, GaAs, InAs, GaP, InP, GaSb, and InSb. However, a thin film serving as a magnetosensitive portion is deposited. Any substrate that can be used may be used. The thin film forming the magnetosensitive part can be used in a single crystal, other crystal, or amorphous state, but in order to realize a highly sensitive magnetic sensor, a single crystal semiconductor thin film is used. It is preferable to use it. As a material for the semiconductor thin film, materials such as InSb, InAs, and GaAs having high electron mobility are preferable. InSb is particularly preferable because it has the highest electron mobility among semiconductors and can obtain a large output of the magnetic sensor. It can be said that it is a material. In addition to the above, a ternary mixed crystal such as InAsSb, InGaSb, and InGaAs or a quaternary mixed crystal such as InGaAsSb may be used. Furthermore, in order to reduce the variation of the element resistance of the semiconductor magnetoresistive element with respect to the ambient temperature change, impurities may be mixed in the semiconductor thin film that becomes the magnetic sensitive part. Since it is generally preferable to add a donor impurity, materials such as Si, Sn, S, Se, Te, Ge, and C can be used. By adding this donor-type impurity, in addition to improving the temperature characteristic of the element resistance described above, an effect of improving the temperature characteristic of the midpoint potential offset of the semiconductor magnetoresistive element can be expected.

  Hereinafter, specific embodiments of the present invention will be described.

  1 to 5 are diagrams showing a first embodiment of a semiconductor magnetoresistive element according to the present invention. In Example 1, the thickness of the pedestal 22 of the lead frame on which the semiconductor magnetoresistive element chip 21 is mounted is 0.15 mm, and the thickness of the leg 23 of the lead frame is 0.50 mm. In order to prevent contact between the lead frame foot 23 and the surrounding metal portion, a linear notch is provided in the resin portion in contact with the lead frame foot 23, and when the lead frame foot 23 is bent, the resin In order to bend at the end portion, the lead frame leg 23 enters the inside of the resin, and a short circuit can be prevented when it contacts a surrounding metal portion such as a metal cap. The back side of the lead frame pedestal 22 had no resin and the lead frame pedestal 22 was exposed.

  A method for manufacturing a semiconductor magnetoresistive element in the present invention will be described below, but the method is not limited to this method. The semiconductor magnetoresistive element chip 21 is manufactured using an InSb thin film formed on a semi-insulating GaAs substrate. The element manufacturing procedure was performed by using a normal photolithography technique to form an InSb thin film in a strip shape, a short-circuit electrode and a lead electrode manufacturing process, a protective film forming process, and the like. Thereafter, normal dicing was performed, and the semiconductor magnetoresistive chip 21 was cut into the shape of the semiconductor magnetoresistive chip 21 to complete the semiconductor magnetoresistive chip 21 of the present invention.

  In the first embodiment, the pitch of the A phase / B phase is designed in accordance with the gear pitch of JIS B1701-1 cylindrical gear involute gear p = 0.8π.

  Mounting of the semiconductor magnetoresistive element chip 21 on the pedestal 22 of the lead frame is performed using a commercially available automatic die bonding apparatus (mounting position accuracy on the catalog: ± 30 μm), and the semiconductor magnetism using a commercially available automatic wire bonding apparatus. The electrode pads of the resistance element chip 21 and the legs 23 of the lead frame were connected. The Au wire 24 used for connection was 30 μmΦ, and the loop height of the wire was 90 μm. The lead frame base 22 on which the semiconductor magnetoresistive element chip 21 was mounted was set in a mold, and resin was injected to complete the molding. After molding, the lead frame tabs and tie bars were cut, separated from the lead frame, and then the lead frame legs 23 were bent at 90 ° using a forming die to complete the semiconductor magnetoresistive element.

  An SmCo-based magnet was inserted into the magnet insertion hole 26 of the completed semiconductor magnetoresistive element, and the back side was sealed with an epoxy resin. Further, the azimuth alignment groove 27 of the semiconductor magnetoresistive element was fitted and inserted into the protrusion 41 of the outer case 38 shown in FIGS. 6 and 7 to complete the magnetic sensor module.

  The output characteristics of the semiconductor magnetoresistive element were measured while rotating the gear of the above standard. The gap between the gear and the CAN surface of the outer case was 0.3 mm (the distance between the gear and the magnetosensitive surface of the semiconductor magnetoresistive element was 0.6 mm). As a result of measuring an output signal with a voltage of 5 V applied to the semiconductor magnetoresistive element with a digital oscilloscope, the phase shift between the A phase and the B phase was 83.9 °, and the phase shift between the A phase and the Z phase was 0.5. °.

  Although the phase shift between the A phase and the B phase is originally designed to be 90 °, it is 83.9 ° due to the curvature of the gear. If a gear having a curvature ∞ is used, the phase difference is 90 °.

(Comparative Example 1)
As shown in FIG. 15, the resin-molded semiconductor magnetoresistive element 8 was soldered onto the printed circuit board 13, and the printed circuit board 13 and the terminal pins 10 were inserted and formed by soldering. A magnet case with an SmCo-based magnet inserted was attached to the back side of the printed circuit board 13 to complete the semiconductor magnetoresistive element. The completed semiconductor magnetoresistive element was covered with a stainless steel CAN having a thickness of 0.1 mm, and the back side of the CAN was sealed with an epoxy resin to complete the semiconductor magnetoresistive element.

  The output characteristics of the semiconductor magnetoresistive element manufactured using the conventional technique were measured using the same gear as in Example 1. The gap between the gear and the CAN surface was 0.3 mm (the distance between the gear and the magnetosensitive surface of the semiconductor magnetoresistive element was 0.6 mm). As a result of measuring an output signal with a voltage of 5 V applied to the semiconductor magnetoresistive element with a digital oscilloscope, the phase shift between the A phase and the B phase was 83.8 °, and the phase shift between the A phase and the Z phase was 5.2 °. Met.

  Phase A and phase B are formed in a single chip, so there is no phase shift. However, phase A and phase Z are composed of separate elements and are mounted separately. Can be said to have grown.

(Comparative Example 2)
From the result of carrying out 30 gear rotation detection measurements of the semiconductor magnetoresistive element manufactured by the method of Example 1 and the semiconductor magnetoresistive element manufactured by the method of Comparative Example 1 described above, the phase between the A phase and the Z phase is obtained. The results of measuring the deviation are shown in FIG. Table 1 shows the measurement results of the phase difference between the A phase and the Z phase of each of the 30 semiconductor magnetoresistive elements manufactured by the present invention and the prior art.

  9 to 12 are diagrams showing Example 2 of the semiconductor magnetoresistive element in the present invention. FIG. 9 is a top view of a semiconductor magnetoresistive element having a shape in which a resin in a method perpendicular to the legs of the lead frame is linearly cut so as to be perpendicular to the lead, and FIG. 10 is a semiconductor magnetoresistive element shown in FIG. FIG. 11 is a perspective view of a semiconductor magnetoresistive element having a shape obtained by linearly cutting a resin in a method perpendicular to the leads of the lead frame so as to be perpendicular to the leads, and FIG. FIG. 12 is a perspective view of the semiconductor magnetoresistive element shown in FIG. 11 viewed from the lower diagonal direction. In addition, the same code | symbol is attached | subjected to the component which has the same function as Example 1. FIG.

  The manufacturing method of the semiconductor magnetoresistive element chip 21 and the mounting of the semiconductor magnetoresistive element chip 21 on the pedestal 22 of the lead frame used the same method as in Example 1. The shape of the mold for resin molding was changed to a shape that was not circular as in Example 1, but a resin that was perpendicular to the legs 23 of the lead frame was linearly cut so as to be perpendicular to the leads. This shape facilitates lead forming.

  The thickness of the pedestal 22 of the lead frame on which the semiconductor magnetoresistive element chip 21 is mounted is 0.15 mm, and the thickness of the legs 23 of the lead frame is 0.50 mm.

  In the semiconductor magnetoresistive element according to the present embodiment, when the outer case is attached, the convex portion formed in the outer case is shaped so as to be aligned with the azimuth alignment groove 27, so that it can be mounted without azimuth misalignment. ing.

  An SmCo-based magnet was inserted into the magnet insertion hole 26 of the completed semiconductor magnetoresistive element, and the back side was sealed with an epoxy resin. Further, the azimuth alignment groove 27 of the semiconductor magnetoresistive element was fitted and inserted into the protrusion 41 of the outer case 38 shown in FIGS. 6 and 7 to complete the magnetic sensor module. At this time, the diameter of the semicircular azimuth alignment groove 27 shown in FIG. 11 was 3 mm, and the diameter of the protrusion 41 of the outer case 38 shown in FIG. 7 was 2.9 mm. The protrusion 41 is merely an example of the fitting means, and is not limited to this.

  The output characteristics of the semiconductor magnetoresistive element were measured while the gear having the same shape as in Example 1 was rotated. The gap between the gear and the CAN surface was 0.3 mm. As a result of measuring the output signal with a voltage of 5 V applied to the semiconductor magnetoresistive element with a digital oscilloscope, the phase shift between the A phase and the B phase was 83.9 °, and the phase shift between the A phase and the Z phase was 0.4. The same results as in Example 1 were obtained.

  FIG. 13 is a diagram showing Example 3 of the semiconductor magnetoresistive element according to the present invention, and shows the semiconductor magnetoresistive element in a case where the molding resin shape on the magnetic sensitive surface is provided with two steps. In the figure, reference numeral 44 denotes a step, and other components having the same functions as those of the second embodiment are denoted by the same reference numerals.

  In the process of manufacturing the semiconductor magnetoresistive element using the same method as in Example 2, the mold used for sealing with the mold resin is changed so that the circular pattern has two stages as shown in FIG. A semiconductor magnetoresistive element was fabricated by providing a step 44 on the substrate. This step structure is effective when a cap having a large bending curvature of the CAN cap is covered, and it is possible to prevent the occurrence of a gap due to the edge of the circular pattern hitting the curvature portion of the cap.

  As described above, in the present invention, the outer peripheral portion of the molding resin of the semiconductor magnetoresistive element has the grooves or depressions (or protrusions) for positioning the azimuth, and the protrusions (or grooves or depressions) and the shape provided on the outer case. Since the mounting deviation at the time of assembling is eliminated by combining the two, the phase deviation between the A phase / Z phase and the B phase / Z phase can be almost eliminated when applied to a magnetic encoder.

  Further, two or more semiconductor magnetoresistive element chips are mounted on one lead frame, and the case where the bias magnet is inserted is integrally formed when the semiconductor magnetoresistive element is resin-molded. Therefore, there is almost no displacement in the mounting of each semiconductor magnetoresistive element chip, and since the case of the bias magnet is also integrated, the magnetic flux contributes more evenly to the magnetic sensitive part of the semiconductor magnetoresistive element chip. The output amplitude and midpoint potential of the A phase, B phase, and Z phase can be kept constant.

  Furthermore, because the lead frame legs are bent and integrated resin molding, the number of parts and manufacturing man-hours can be greatly reduced compared to conventional magnetic sensor module manufacturing methods. Thus, significant cost reduction in the production of the magnetic sensor module can be realized. In addition, since it has a simpler structure than conventional magnetic sensor modules and is easy to assemble, it is possible to reduce defective elements and reduce variations in element characteristics among individual elements, thereby realizing a stable supply of magnetic sensor modules. it can. In addition, since the mold resin can be made thicker than conventional semiconductor magnetoresistive elements, it is possible to achieve exceptional durability against physical impact from the outside, and the industrial utility value is measurable. Absent.

It is a top view which shows embodiment (Example 1) of the semiconductor magnetoresistive element of this invention. FIG. 2 is a bottom view of the semiconductor magnetoresistive element shown in FIG. 1. It is a perspective view which shows the state which mounted the semiconductor magnetoresistive element chip | tip on the lead frame, and gave the wire bonding. It is the perspective view seen from the upper part diagonal direction of the semiconductor magnetoresistive element of this invention. It is the perspective view which looked at the semiconductor magnetoresistive element of this invention shown in FIG. 4 from the lower diagonal direction. It is a perspective view when the outer case which accommodates the semiconductor magnetoresistive element of this invention is seen from the front. It is a perspective view when the outer case shown in FIG. 6 is seen from back. It is a figure which shows the phase shift distribution between the 30 A phase-Z phases of each semiconductor magnetoresistive element produced by this invention and the prior art. FIG. 8 is a diagram illustrating a semiconductor magnetoresistive element according to a second embodiment of the present invention, and is a top view of a semiconductor magnetoresistive element formed by linearly cutting a resin in a method perpendicular to the legs of a lead frame so as to be perpendicular to the leads. . FIG. 10 is a bottom view of the semiconductor magnetoresistive element shown in FIG. 9. It is the perspective view which looked at the semiconductor magnetoresistive element made into the shape which linearly cut the resin of the perpendicular | vertical method to the leg | foot of a lead frame so that it might become perpendicular | vertical to a lead | read | reed. It is the perspective view which looked at the semiconductor magnetoresistive element shown in FIG. 11 from the lower diagonal direction. It is a figure which shows Example 3 of the semiconductor magnetoresistive element in this invention. It is sectional drawing of the conventional semiconductor magnetoresistive element used for a magnetic encoder. It is a perspective view of the other conventional semiconductor magnetoresistive element used for a magnetic encoder. It is the figure which showed the state of the mounting position shift at the time of mounting a semiconductor magnetoresistive element.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor magnetoresistive element chip 2 Lead frame base 3 Lead frame leg 4 Gold wire 8 Semiconductor magnetoresistive element 9 Bias magnet 10 Output pin 11 Magnet case 12 Connection wiring 13 Printed circuit board 18 External case 19 Filling resin 21 Magnetoresistive element chip 22 Lead frame base 23 Lead frame foot 24 Gold wire 25 Sealing resin 26 Magnet insertion hole 27 Azimuth alignment groove 38 External case 40 Metal part 41 on the magnetic sensitive surface Projection 42 Substrate mounting screw hole 43 Magnetic resistance Element insertion hole 44 Step

Claims (8)

  1.   A plurality of semiconductor magnetoresistive element chips are die-bonded and wire-bonded on the lead frame, and the semiconductor magnetoresistive element chip and the lead frame form a magnet insertion hole on the back surface of the lead frame. A semiconductor magnetoresistive element, which is integrally molded with a sealing resin and provided with an azimuth alignment portion on the sealing resin.
  2.   The semiconductor magnetoresistive element according to claim 1, wherein a plurality of the azimuth alignment portions are provided on an outer peripheral portion of the sealing resin.
  3.   The semiconductor magnetoresistive element according to claim 1, wherein the azimuth alignment portion has a groove or a protrusion.
  4.   4. The semiconductor magnetoresistive element according to claim 1, wherein the sealing resin is integrally molded with a circular resin on the semiconductor magnetoresistive element chip and has a two-stage shape. 5. .
  5.   5. A magnetic sensor module comprising: the semiconductor magnetoresistive element according to claim 1; and an outer case having a fitting portion fitted to the azimuth alignment portion.
  6.   By providing an insertion hole for inserting the semiconductor magnetoresistive element in the outer case, providing a plurality of the fitting portions at the peripheral edge of the insertion hole, and fitting the fitting portion to the azimuth alignment portion, 6. The magnetic sensor module according to claim 5, wherein the semiconductor magnetoresistive element chip and the outer case are positioned.
  7.   The magnetic sensor module according to claim 5, wherein the fitting portion has a protrusion or a groove.
  8. 8. The magnetism according to claim 5, 6 or 7, wherein a nonmagnetic metal member is provided in front of a magnetic sensitive surface of the semiconductor magnetoresistive element inserted in the outer case and in front of the insertion hole. Sensor module.
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JP2010145285A (en) * 2008-12-19 2010-07-01 Alps Electric Co Ltd Magnetic detection device and method of manufacturing the same
JP2010522994A (en) * 2007-03-29 2010-07-08 アレグロ・マイクロシステムズ・インコーポレーテッド Method and apparatus for multistage molding of integrated circuit packages
JP2012511152A (en) * 2008-12-05 2012-05-17 アレグロ・マイクロシステムズ・インコーポレーテッド Magnetic field sensor and method for manufacturing the magnetic field sensor
JP2013250244A (en) * 2012-06-04 2013-12-12 Nidec Sankyo Corp Magnetic sensor device
JP2014508286A (en) * 2011-01-17 2014-04-03 ジャンス マルチディメンショナル テクノロジー シーオー., エルティーディー Single package bridge type magnetic field sensor
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US9620705B2 (en) 2012-01-16 2017-04-11 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having non-conductive die paddle
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9720054B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
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US9810519B2 (en) 2013-07-19 2017-11-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
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US10324141B2 (en) 2017-05-26 2019-06-18 Allegro Microsystems, Llc Packages for coil actuated position sensors
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US10495699B2 (en) 2013-07-19 2019-12-03 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target

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Cited By (27)

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Publication number Priority date Publication date Assignee Title
JP2010522994A (en) * 2007-03-29 2010-07-08 アレグロ・マイクロシステムズ・インコーポレーテッド Method and apparatus for multistage molding of integrated circuit packages
JP2012511152A (en) * 2008-12-05 2012-05-17 アレグロ・マイクロシステムズ・インコーポレーテッド Magnetic field sensor and method for manufacturing the magnetic field sensor
JP2010145285A (en) * 2008-12-19 2010-07-01 Alps Electric Co Ltd Magnetic detection device and method of manufacturing the same
JP2014508286A (en) * 2011-01-17 2014-04-03 ジャンス マルチディメンショナル テクノロジー シーオー., エルティーディー Single package bridge type magnetic field sensor
US10333055B2 (en) 2012-01-16 2019-06-25 Allegro Microsystems, Llc Methods for magnetic sensor having non-conductive die paddle
US9620705B2 (en) 2012-01-16 2017-04-11 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having non-conductive die paddle
US9812588B2 (en) 2012-03-20 2017-11-07 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9494660B2 (en) 2012-03-20 2016-11-15 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US10230006B2 (en) 2012-03-20 2019-03-12 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with an electromagnetic suppressor
JP2013250244A (en) * 2012-06-04 2013-12-12 Nidec Sankyo Corp Magnetic sensor device
US9411025B2 (en) 2013-04-26 2016-08-09 Allegro Microsystems, Llc Integrated circuit package having a split lead frame and a magnet
US9810519B2 (en) 2013-07-19 2017-11-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
US10254103B2 (en) 2013-07-19 2019-04-09 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
US10145908B2 (en) 2013-07-19 2018-12-04 Allegro Microsystems, Llc Method and apparatus for magnetic sensor producing a changing magnetic field
US10495699B2 (en) 2013-07-19 2019-12-03 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target
US9720054B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
US9823090B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a target object
US9719806B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a ferromagnetic target object
US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
US10041810B2 (en) 2016-06-08 2018-08-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as movement detectors
US10260905B2 (en) 2016-06-08 2019-04-16 Allegro Microsystems, Llc Arrangements for magnetic field sensors to cancel offset variations
US10012518B2 (en) 2016-06-08 2018-07-03 Allegro Microsystems, Llc Magnetic field sensor for sensing a proximity of an object
US10310028B2 (en) 2017-05-26 2019-06-04 Allegro Microsystems, Llc Coil actuated pressure sensor
US10324141B2 (en) 2017-05-26 2019-06-18 Allegro Microsystems, Llc Packages for coil actuated position sensors
WO2019131816A1 (en) * 2017-12-27 2019-07-04 旭化成エレクトロニクス株式会社 Magnetic sensor module

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