JP2007214590A - Method for cleaning substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for cleaning a substrate capable of concurrently cleaning a surface and trench section in a substrate and preventing micro particles once removed from being attached again thereto to perform a high-detergency cleaning. <P>SOLUTION: The substrate W is retained and rotated by a substrate retaining section 10, an oscillating arm 14 is lowered to allow a lower end of a cleaning body 42 to contact the surface of the rotating substrate W, and the oscillating arm 14 is oscillated to perform scrub-cleaning on the substrate W with the cleaning body 42, an internal wall of the cleaning body 42 and a space enclosed by the substrate W are filled with a cleaning liquid by jetting a high-pressure cleaning liquid from a high-pressure nozzle 36, bubbles are generated by cavitation in the vicinity of an interface between the liquid filled in the space and the high-pressure liquid jetted from the high-pressure nozzle 36 passing though the cleaning liquid, thereby performing high-pressure liquid cleaning on the substrate parallel by allowing the bubbles to be crushed by the cavitation. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate cleaning method, and more particularly to a substrate cleaning method suitable for cleaning a substrate that requires a high degree of cleanliness, such as a semiconductor substrate, a glass substrate, and a liquid crystal panel.

  In recent years, with the progress of high integration of semiconductor devices, circuit wiring on a semiconductor substrate is miniaturized and the distance between wirings is becoming narrower. However, in processing of a semiconductor substrate, particles such as fine particles, dust, and crystalline protrusions of a semiconductor piece may adhere. If particles larger than the distance between the wirings are present on the semiconductor substrate, a problem such as a short circuit of the wiring occurs, so that only particles that are sufficiently smaller than the distance between the wirings are allowed on the substrate. Such a situation also applies to the processing of a glass substrate used for a mask or the like or a substrate such as a liquid crystal panel. Along with such a demand, there is a need for a cleaning technique that drops finer sub-micron level particles from a semiconductor substrate or the like.

  For example, as a method of cleaning a polished semiconductor substrate with a high degree of cleaning, scrub cleaning is performed by rubbing a cleaning body made of a brush or sponge on the substrate, or high-pressure water (high-speed jet flow) is sprayed toward the substrate. Cavitation jet cleaning performed by generating bubbles by cavitation has been proposed. In cavit jet cleaning, it is necessary to supply low-pressure water to the outer periphery of high-pressure water in order to generate bubbles due to cavitation.

  However, although scrub cleaning is effective for dirt adhering to the surface of the substrate, it is not necessarily effective for removing residual fine particles adhering inside fine grooves on the surface of the substrate. Further, when the amount of fine particles adhering to the cleaning body increases, there is also a problem that it tends to re-adhere to other places.

  On the other hand, cavitation jet cleaning is effective for removing residual fine particles adhering to the inside of fine grooves on the substrate surface, but the configuration is complicated such as flowing cleaning water through the inner and outer two layers, and the amount of cleaning water increases. In addition, there is also a problem that it is difficult to remove dirt or the like adhered to the surface of the substrate.

  This is the same for other cleanings, although one of the cleaning of the substrate surface and the inside of the groove can be satisfied, but there is no one that satisfies both at the same time, so multiple stages of cleaning are performed. It was.

  The present invention has been made in view of the above circumstances, and simultaneously cleans the surface of the substrate and the inside of the groove, and prevents re-adhesion of the fine particles once removed, thereby performing cleaning with a high degree of cleaning. It is an object of the present invention to provide a method for cleaning a substrate.

  The substrate cleaning method of the present invention includes a substrate holding unit that holds and rotates a substrate, a high-pressure nozzle that jets a high-pressure cleaning liquid toward the substrate, a hollow cleaning body that surrounds the periphery of the high-pressure nozzle, and the high-pressure nozzle And a substrate cleaning method comprising a swinging arm for holding a cleaning body, wherein the substrate is held and rotated by the substrate holding part and the swinging arm is lowered and rotated. The cleaning body is contacted with the lower end of the cleaning body, and the swing arm is swung to scrub the substrate with the cleaning body, and a high-pressure cleaning liquid is ejected from the high-pressure nozzle to surround the inner wall of the cleaning body and the substrate. Cavitation bubbles are generated near the interface between the cleaning liquid filled in the space and the high-pressure cleaning liquid ejected from the high-pressure nozzle passing through the cleaning liquid. Then, the high pressure liquid cleaning of the substrate is performed in parallel by the collapse of the bubbles due to the cavitation, and then the swinging of the swinging arm and the supply of the high pressure cleaning liquid are stopped, and the swinging arm is lifted up from above the substrate. It is characterized by being saved.

In one aspect of the present invention, the swinging arm is swung up to a substantially central position of the substrate while the swinging arm is raised, and then the swinging arm is lowered to rotate on the surface of the substrate. The lower end of the cleaning body is brought into contact.
In one aspect of the present invention, the pressure of the high-pressure cleaning liquid ejected from the high-pressure nozzle toward the substrate is 1 to 15 MPa. As a result, water is contained in the cleaning body. As a result, there is a state in which an inner high-speed flow and an outer low-speed flow in contact with this exist, so-called cavitation is generated in which bubbles are generated due to a large speed difference near the interface. Therefore, it is possible to increase the cleaning water particulate removal and cleaning ability.
In one embodiment of the present invention, the cleaning body is rotated.
In one embodiment of the present invention, the cleaning body is made of PVA sponge.

  The cleaning apparatus of the present invention includes a substrate holding unit that holds a substrate, and a cleaning tool that is slidably provided on the surface of the substrate, and the cleaning tool sprays a high-pressure cleaning liquid toward the substrate. And a cylindrical cleaning body surrounding the periphery of the high-pressure nozzle.

  As a result, the cleaning body is slid while the lower end surface of the cleaning body is in contact with the surface of the rotating substrate, and at the same time, high-pressure cleaning liquid is sprayed from the high-pressure nozzle toward the substrate surface. Liquid cleaning is performed at the same time to efficiently remove fine particles adhering to the substrate surface and fine particles in the groove. Since the high-pressure cleaning liquid is covered by the cleaning body, it is prevented from absorbing static electricity and gas, and since it is a self-cleaning type that supplies liquid from the inside of the cleaning body, dirt on the cleaning body does not concentrate, There is little risk of recontamination.

  Preferably, the substrate holding unit is rotated, and the cleaning tool is attached to the tip of the swing arm and swings to increase the relative movement amount. Preferably, ultrapure water is used as the cleaning liquid, and a cleaning body having a flexibility such as sponge and a certain level of liquid permeability is used.

  The cleaning apparatus of the present invention includes a high-pressure nozzle that injects a high-pressure cleaning liquid toward the substrate, and a hollow body that surrounds the periphery of the high-pressure nozzle, and the hollow body and the substrate hold the cleaning liquid ejected from the high-pressure nozzle. The cleaning liquid that forms a space and is ejected from the high-pressure nozzle passes through the cleaning liquid held in the space and collides with the surface of the substrate.

  With the above-described configuration, the high-pressure cleaning liquid is ejected from the high-pressure nozzle onto the substrate, and the space formed by the hollow body and the substrate is filled with the cleaning liquid. The high-pressure cleaning liquid ejected from the high-pressure nozzle passes through the cleaning liquid under static pressure held in the space. Therefore, a large speed difference occurs near the interface between the cleaning liquid under static pressure filled in the space and the high-pressure cleaning liquid ejected from the high-pressure nozzle that passes through the cleaning liquid under static pressure, and bubbles are generated by cavitation.

  According to the present invention, scrub cleaning of the substrate and high pressure liquid cleaning are performed in parallel to simultaneously clean the surface of the substrate and the inside of the groove, and by supplying liquid from the inside of the cleaning body, the contamination of the cleaning body is concentrated. It is possible to provide a method for cleaning a substrate that can prevent re-adhesion of fine particles due to crystallization and perform cleaning with a high degree of cleaning.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 4. FIG. 1 is a perspective view showing the overall configuration of the cleaning apparatus of the present invention. As shown in FIG. 1, the cleaning apparatus includes a spin chuck 10 that horizontally holds a semiconductor substrate W as an object to be cleaned and rotates the semiconductor substrate W at a required number of rotations. The substrate W is held by the spin chuck 10 with the cleaning surface facing upward. On the other hand, on the side of the spin chuck 10, a support shaft 12 having a swing arm 14 extending in the horizontal direction at the upper end is disposed so as to be vertically movable and rotatable.

  A substantially cylindrical housing 16 is held at the tip of the swing arm 14. FIG. 2 is an enlarged cross-sectional view showing a main part of FIG. As shown in FIG. 2, a rotary shaft 18 extending in the vertical direction is rotatably held in the housing 16 by bearings 17 a and 17 b held by a bearing holding member 17, and a driven umbrella is attached to the upper end of the rotary shaft 18. A gear 20a is attached. On the other hand, a bearing casing 23 that rotatably supports a horizontally extending drive shaft 22 by bearings 23a and 23b is provided on the upper portion of the bearing holding member 17, and a driven bevel gear 20a is provided at the tip of the drive shaft 22. The drive bevel gear 20b that meshes with is attached. The drive shaft 22 is connected to a drive source such as a motor provided at the base end of the swing arm 14 or the like.

A ring-shaped member 24 having a flow passage 24a for supplying high-pressure water therein is provided at the lower portion of the rotary shaft 18, and the end of the high-pressure hose 28 is connected to the inlet 24b of the flow passage 24a via a joint 26. Are connected. The high-pressure hose 28 is inserted through the inside of the housing 16 and extends to the outside. A pressure pump such as a plunger pump (not shown) is provided in the middle of the high-pressure hose 28, and the water flowing through this pressure pump is 1-15 MPa (10-150 kgf / cm ² ), preferably 5-5. The pressure is about 10 MPa (50 to 100 kgf / cm ² ).

  A ring-shaped liquid reservoir 30 extending in the circumferential direction is formed between the rotary shaft 18 and the ring-shaped member 24. FIG. 3 is a cross-sectional view taken along line AA in FIG. As shown in FIG. 3, the rotary shaft 18 is formed with a radial flow path 32 a from the annular liquid reservoir 30 toward the axial center, thereby forming a rotary joint 33. The radial flow path 32a further communicates with an axial flow path 32b extending downward along the axis, thereby forming a high-pressure liquid flow path 32 that opens to the high-pressure nozzle mounting portion 34 at the lower end of the rotary shaft 18. Yes.

  A high pressure nozzle 36 having a small diameter nozzle hole 36a at the tip is screwed onto the high pressure nozzle mounting portion 34. FIG. 4 is a view showing the tip of the high-pressure nozzle 36 having the nozzle hole 36a. The nozzle hole 36a may be a jet nozzle type in which the tip extends outward as shown in FIG. 4 (a), or may be a type in which the tip is straight as shown in FIG. 4 (b). The diameter of the nozzle hole 36a is, for example, about 0.2 to 0.4 mm, and is set so that when the nozzle diameter is 0.2 mm, the flow rate of the high-pressure liquid is about 210 ml / min.

  On the other hand, a liquid-proof plate 39 is fixed to the lower part of the rotating shaft 18 by a fixing sleeve 38 to prevent the cleaning liquid bounced off from the substrate W from entering the opening of the housing 16. A cylindrical scrub cleaning body 42 made of PVA sponge or the like is attached to the front end of the fixed sleeve 38 so as to surround the high pressure nozzle 36. The tip of the cleaning body 42 is attached so as to extend below the tip of the high-pressure nozzle 36. PVA sponge has excellent liquid absorbency due to extremely fine continuous pores, is flexible, and is less likely to fall off than fiber products.

  Next, a method for using the cleaning apparatus configured as described above will be described. First, the substrate W is transferred onto the spin chuck 10 by a robot arm or the like, and the substrate W is held by the spin chuck 10 and rotated at a predetermined number of rotations. Next, the swing arm 14 is swung to the substantially center position of the substrate W with the swing arm 14 raised.

  In this state, the rotating shaft 18 is rotated to rotate the cleaning body 42 and the swing arm 14 is lowered, and the lower end of the cleaning body 42 is pressed against the surface to be cleaned of the rotating substrate W with a predetermined pressure. A cleaning liquid such as ultrapure water is sprayed from the nozzle 36 toward the substrate W at a high pressure of about 1 to 15 MPa. Then, the oscillating arm 14 is oscillated to oscillate between both outer edges so that the cleaning body 42 passes through the central portion of the substrate W at a predetermined speed, and scrub cleaning and high-pressure liquid cleaning of the substrate W are performed in parallel. And do it. The swing of the swing arm 14 is repeated a predetermined number of times.

  At this time, in the space surrounded by the cleaning body 42, the high-pressure water from the high-pressure nozzle 36 directly hits the surface of the substrate W, and the fine particles present in the grooves on the surface are washed out. Since the high-pressure nozzle 36 is surrounded by the cleaning body 42, the high-pressure water from the high-pressure nozzle 36 is prevented from absorbing gas in the atmosphere, and thus molecular contamination due to gas components can be prevented. Moreover, since the mist generated by the high-pressure water cleaning does not go outside from the internal space of the cleaning body 42, the diffusion of the mist can be suppressed.

  A high-pressure liquid is supplied from the high-pressure nozzle 36 to the substrate W, the lower end of the cleaning body 42 is brought into contact with the substrate W, and a space 42b surrounded by the lower end of the high-pressure nozzle 36, the inner wall of the cleaning body 42, and the substrate W is ultrapure water or the like. Fill with the cleaning solution. A large speed difference exists near the interface between the cleaning liquid under static pressure filled in the space 42b and the high-pressure liquid ejected from the high-pressure nozzle 36 that passes through the cleaning liquid under static pressure, and friction occurs to generate bubbles. So-called cavitation occurs. Even if the lower end of the cleaning body 42 is not brought into contact with the substrate W and is brought close to the substrate W, bubbles due to cavitation are generated. When the lower end of the cleaning body 42 is brought close to the substrate W, the distance between the substrate W and the lower end of the cleaning body 42 so that the amount flowing out from the gap between the two is smaller than the flow rate of the high-pressure liquid supplied from the high-pressure nozzle 36. Set. When the cleaning body 42 is brought close to the substrate W without being in contact with the substrate W, the cleaning body 42 does not need to be made of a liquid-absorbing material such as a sponge, and may be a hollow body that fills the space 42b with the cleaning liquid. Bubbles due to cavitation continue for a predetermined time and then collapse near the surface of the substrate W, thereby increasing the particulate removal and cleaning ability of the cleaning liquid.

  Further, in this cleaning apparatus, by supplying liquid from the inside of the cleaning body 42, the fine particles adhering to the cleaning body 42 are sequentially removed, that is, since it is a self-cleaning type, There is little risk of recontamination.

  After finishing the cleaning for a predetermined time, the swinging of the swinging arm 14 and the supply of the high-pressure liquid are stopped, the swinging arm 14 is raised and retracted from the substrate W, and then the spin chuck 10 is rotated at a high speed. Spin dry. When performing the next cleaning process, the rotation of the substrate W is stopped, and the substrate W is transported to the next process so that the surface to be cleaned is not dried.

  In this example, ultrapure water was used as the cleaning solution. However, chemical solution such as ammonia water, dilute hydrofluoric acid, or ozone pure water was supplied to perform chemical cleaning and mechanical cleaning by cavitation. The contamination may be removed. In addition, by using a liquid such as carbon dioxide-dissolved pure water that has been reduced in specific resistance by adding a substance that ionizes to high-pressure ultrapure water, the static electricity generated when the high-pressure liquid collides with the substrate is reduced. You may make it prevent the electrostatic breakdown of the circuit formed on a board | substrate, and particle adhesion.

It is a perspective view which shows the outline | summary of embodiment of this invention. It is a principal part expanded sectional view which expands and shows the principal part of FIG. It is sectional drawing along the AA line of FIG. It is a figure which expands and shows the principal part of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Spin chuck 14 Swing arm 18 Rotating shaft 24 Ring-shaped member 28 High-pressure hose 32 High-pressure liquid flow path 33 Rotary joint 34 High-pressure nozzle mounting part 36 High-pressure nozzle 38 Fixing sleeve 39 Liquid-proof plate 42 Washing body W Substrate

Claims (5)

A substrate holding unit that holds and rotates the substrate, a high-pressure nozzle that jets high-pressure cleaning liquid toward the substrate, a hollow cleaning body that surrounds the periphery of the high-pressure nozzle, and a swing arm that holds the high-pressure nozzle and the cleaning body A substrate cleaning method using a cleaning apparatus comprising:
The substrate is held and rotated by the substrate holder, the swing arm is lowered, the lower end of the cleaning body is brought into contact with the surface of the rotating substrate, the swing arm is swung, and the substrate is moved by the cleaning body. The scrub cleaning is performed, and the high pressure cleaning liquid is ejected from the high pressure nozzle to fill the space surrounded by the inner wall and the substrate of the cleaning body with the cleaning liquid, and the cleaning liquid filled in the space and the high pressure passing through the cleaning liquid A bubble is generated by cavitation near the interface with the high-pressure cleaning liquid ejected from the nozzle, and the high-pressure liquid cleaning of the substrate is performed in parallel by collapsing the bubbles due to the cavitation, and then the swinging of the swing arm and the high-pressure cleaning liquid The substrate cleaning method is characterized in that the supply of the substrate is stopped and the swinging arm is raised to retract from the substrate.   The swing arm is swung to the substantially center position of the substrate while the swing arm is raised, and then the lower end of the cleaning body is brought into contact with the surface of the rotating substrate by lowering the swing arm. The method for cleaning a substrate according to claim 1.   The method for cleaning a substrate according to claim 1, wherein the pressure of the high-pressure cleaning liquid sprayed from the high-pressure nozzle toward the substrate is 1 to 15 MPa.   The substrate cleaning method according to claim 1, wherein the cleaning body is rotated. The method for cleaning a substrate according to claim 1, wherein the cleaning body is made of PVA sponge.

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