JP2007209989A - High-temperature brazing filler metal - Google Patents
High-temperature brazing filler metal Download PDFInfo
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- JP2007209989A JP2007209989A JP2006029448A JP2006029448A JP2007209989A JP 2007209989 A JP2007209989 A JP 2007209989A JP 2006029448 A JP2006029448 A JP 2006029448A JP 2006029448 A JP2006029448 A JP 2006029448A JP 2007209989 A JP2007209989 A JP 2007209989A
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本発明は、電子部品や機械部品の組立などにおける高温はんだ付け用の高温ろう材、特に、Zn系はんだ合金からなる高温ろう材に関する。 The present invention relates to a high temperature brazing material for high temperature soldering in the assembly of electronic parts and mechanical parts, and more particularly to a high temperature brazing material made of a Zn-based solder alloy.
パワートランジスタ素子のダイボンディングを始めとする各種電子部品の組立工程におけるはんだ付けでは、高温はんだ付けが行われ、比較的、高温の300℃前後の融点を有するはんだ合金(以下、高融点のはんだ合金と記載する)が、高温ろう材として用いられている。高温ろう材として、Pb−5質量%Sn合金に代表される合金(Pb系はんだ合金)、およびAu−20質量%Sn合金が従来より用いられていた。 Soldering in the assembly process of various electronic components including die bonding of power transistor elements is performed by high-temperature soldering, and a relatively high-temperature solder alloy having a melting point of about 300 ° C. (hereinafter referred to as a high-melting-point solder alloy) Is used as a high-temperature brazing material. As a high temperature brazing material, an alloy represented by a Pb-5 mass% Sn alloy (Pb solder alloy) and an Au-20 mass% Sn alloy have been conventionally used.
しかし、近年、環境汚染に対する配慮から、Pbの使用を制限する動きが強くなり、こうした動きに対応して、電子部品の組立の分野においても、Pbを含まない高融点のはんだ合金が求められている。また、Auを含有する高融点のはんだ合金は高価であるため、Auを含有しない高融点のはんだ合金が求められている。 However, in recent years, due to consideration for environmental pollution, there has been a strong movement to limit the use of Pb, and in response to such movement, in the field of electronic component assembly, a high melting point solder alloy containing no Pb is required. Yes. Further, since a high melting point solder alloy containing Au is expensive, a high melting point solder alloy not containing Au is required.
このように、Pbを含有せず、かつ、Auを含有しない高融点のはんだ合金として、Zn−Al−Ge合金およびZn−Al−Ge−Mg合金が、特開2000−208533号公報に記載されている。 As described above, Zn-Al-Ge alloys and Zn-Al-Ge-Mg alloys are described in JP-A-2000-208533 as high melting point solder alloys that do not contain Pb and do not contain Au. ing.
しかし、Agめっきに対する濡れ性は得られたものの、CuやNiに対しては濡れ性が不足するために接合することができず、さらに、塑性加工性が悪く、高価であった。 However, although wettability with respect to Ag plating was obtained, it was not possible to join Cu or Ni due to insufficient wettability, and further, plastic workability was poor and expensive.
また、濡れ性を改善することを目的としたZn−Al−Ge−Pが、特開2004−358540号公報に記載され、Zn−Al−Mg−Ga−Pが、特開2004−358539号公報に記載されているが、これらの公報に記載されている発明では、濡れ性は改善されるものの、塑性加工性が悪く、また高価であった。 Further, Zn-Al-Ge-P for the purpose of improving wettability is described in JP-A-2004-358540, and Zn-Al-Mg-Ga-P is disclosed in JP-A-2004-358539. However, in the inventions described in these publications, although wettability is improved, plastic workability is poor and expensive.
本発明の目的は、このような事情に鑑み、良好な濡れ性と塑性加工性とを併せ持つZn系はんだ合金からなる高温ろう材を提供することにある。 In view of such circumstances, an object of the present invention is to provide a high-temperature brazing material made of a Zn-based solder alloy having both good wettability and plastic workability.
本発明の高温ろう材は、0.1質量%〜1質量%のAl、0.05質量%〜1質量%のGe、0.01質量%〜1.0質量%のV、および、0.01質量%〜0.5質量%のPからなる群から選ばれる少なくとも一種を含み、残部がZnおよび不可避不純物からなる。 The high temperature brazing filler metal of the present invention comprises 0.1% by mass to 1% by mass of Al, 0.05% by mass to 1% by mass of Ge, 0.01% by mass to 1.0% by mass of V, and It contains at least one selected from the group consisting of 01% by mass to 0.5% by mass P, with the balance being Zn and inevitable impurities.
本発明の半導体装置は、接着部が、前記の高温ろう材を使用して得られる。 In the semiconductor device of the present invention, the bonding portion is obtained using the high-temperature brazing material.
本発明の高温ろう材は、Pbを含有せず、かつ、Auを含有しないZn系はんだ合金からなり、良好な濡れ性と塑性加工性とを合わせ持ち、かつ、安く生産できるため、半導体装置の組立において、広範囲に適用できる。その結果、Pbを含まないことにより、環境に配慮した半導体装置を提供することができる。 The high-temperature brazing material of the present invention is made of a Zn-based solder alloy that does not contain Pb and does not contain Au, has both good wettability and plastic workability, and can be produced at low cost. Widely applicable in assembly. As a result, an environment-friendly semiconductor device can be provided by not including Pb.
本発明の高温ろう材は、融点が420℃であるZnをベースとし、Al、Ge、VおよびPからなる群から選ばれる少なくとも一種を添加することにより、Agのみならず、CuやNiに対しても、良好な濡れ性を確保しつつ、良好な塑性加工性をも有している。 The high temperature brazing material of the present invention is based on Zn having a melting point of 420 ° C., and by adding at least one selected from the group consisting of Al, Ge, V and P, not only Ag but also Cu and Ni. However, it also has good plastic workability while ensuring good wettability.
本発明の高温ろう材は、前述の特開2004−358540号公報記載のろう材と比較して、AlおよびGeの量が少なく、融点低下の効果はないものの、接合温度が420℃以上であれば、良好に接合でき、かつ、AlおよびGeの量が少ないことより、良好な塑性加工性が得られる。 The high-temperature brazing material of the present invention has a lower amount of Al and Ge than the brazing material described in JP-A-2004-358540 and has no effect of lowering the melting point, but the bonding temperature is 420 ° C. or higher. Thus, good plastic workability can be obtained because of good bonding and a small amount of Al and Ge.
Al、Ge、VおよびPは、いずれも濡れ性を改善する元素であり、これらの添加により、Agのみでなく、CuやNiに対しても、良好な濡れ性を確保することができる。これは、ろう材溶解時に、酸素が優先的にAl、Ge、VまたはPと反応し、溶体表面に酸化皮膜が発生することを防止できることによると、本発明者らは推定している。 Al, Ge, V, and P are all elements that improve wettability, and by adding these, good wettability can be secured not only for Ag but also for Cu and Ni. The present inventors presume that this can prevent oxygen from preferentially reacting with Al, Ge, V, or P and generating an oxide film on the surface of the solution during melting of the brazing filler metal.
Alを添加する場合には、Alの含有量は、0.1質量%〜1質量%とする。0.1質量%未満では、良好な濡れ性を確保しがたく、接合時に接合不良を発生する確率が高くなってしまい、1質量%を超えると、接合時にAlの酸化皮膜が多く生成し、良好な濡れ性が確保しがたくなる。加えて、得られるZn系はんだ合金の硬度が高くなり、塑性加工性が低下してしまう。 When adding Al, the content of Al is 0.1% by mass to 1% by mass. If it is less than 0.1% by mass, it is difficult to ensure good wettability, and the probability of occurrence of poor bonding at the time of bonding becomes high. It is difficult to ensure good wettability. In addition, the hardness of the obtained Zn-based solder alloy increases, and the plastic workability decreases.
Geを添加する場合には、Geの含有量は、0.01質量%〜1.0質量%とする。0.01質量%未満では、良好な濡れ性を確保しがたく、接合時に接合不良を発生する確率が高くなってしまい、1.0質量%を超えると、接合時にGeの酸化皮膜が多く生成し、良好な濡れ性が確保できなくなる。加えて、得られるZn系はんだ合金の硬度が高くなり、塑性加工性が低下してしまう。 When adding Ge, content of Ge shall be 0.01 mass%-1.0 mass%. If it is less than 0.01% by mass, it is difficult to ensure good wettability and the probability of occurrence of poor bonding during bonding becomes high. If it exceeds 1.0% by mass, a large amount of Ge oxide film is produced during bonding. As a result, good wettability cannot be ensured. In addition, the hardness of the obtained Zn-based solder alloy increases, and the plastic workability decreases.
Vを添加する場合には、Vの含有量は、0.01質量%〜1.0質量%とする。0.01質量%未満では、良好な濡れ性を確保しがたく、接合時に接合不良を発生する確率が高くなってしまい、1.0質量%を超えると、接合時にGeの酸化皮膜が多く生成し、良好な濡れ性が確保しがたくなる。加えて、得られるZn系はんだ合金の硬度が高くなり、塑性加工性が低下してしまう。 When V is added, the content of V is set to 0.01% by mass to 1.0% by mass. If it is less than 0.01% by mass, it is difficult to ensure good wettability and the probability of occurrence of poor bonding during bonding becomes high. If it exceeds 1.0% by mass, a large amount of Ge oxide film is produced during bonding. However, it is difficult to ensure good wettability. In addition, the hardness of the obtained Zn-based solder alloy increases, and the plastic workability decreases.
Pを添加する場合には、Pの含有量は、0.01質量%〜0.5質量%とする。0.01質量%未満では、良好な濡れ性を確保しがたく、接合時に接合不良を発生する確率が高くなってしまい、0.5質量%を超える添加は、得られるZn系はんだ合金内にPが溶け込まず、製造が困難になる。 When adding P, content of P shall be 0.01 mass%-0.5 mass%. If it is less than 0.01% by mass, it is difficult to ensure good wettability, and the probability of occurrence of poor bonding at the time of joining becomes high. Addition exceeding 0.5% by mass is incorporated in the obtained Zn-based solder alloy. P does not melt, making manufacture difficult.
[実施例1〜22、比較例1〜8]
Zn地金と、Al地金、金属Ge、金属Vおよび金属P(以上の原料は、いずれも純度99.9質量%)を用いて、大気溶解炉により高温ろう材を溶製した。
[Examples 1 to 22, Comparative Examples 1 to 8]
A high-temperature brazing material was melted in an atmospheric melting furnace using Zn ingot, Al ingot, metal Ge, metal V, and metal P (all of the above materials had a purity of 99.9% by mass).
得られた高温ろう材の組成を、化学分析により測定した。分析結果を、表1に示す。 The composition of the obtained high temperature brazing material was measured by chemical analysis. The analysis results are shown in Table 1.
さらに、得られた高温ろう材について、濡れ性の評価を次のように行った。 Furthermore, the obtained high temperature brazing material was evaluated for wettability as follows.
(1)420℃窒素気流中で保持するろう材浴を調製する。 (1) A brazing material bath that is maintained in a nitrogen stream at 420 ° C. is prepared.
(2)銅片と、Niめっきを施した銅片とを、(1)で調製したろう材浴の中に5秒間、浸漬した後、取り出して、観察する。 (2) The copper piece and the Ni-plated copper piece are immersed in the brazing material bath prepared in (1) for 5 seconds, and then taken out and observed.
(3)銅面およびNiめっき面のそれぞれにおいて、ろう材が濡れ広がった場合に「良」と評価し、濡れ広がらなかった場合に「不良」と評価した。評価結果を、表1に示す。 (3) On each of the copper surface and the Ni plating surface, when the brazing material spreads wet, it was evaluated as “good”, and when it did not spread, it was evaluated as “bad”. The evaluation results are shown in Table 1.
塑性加工性の評価として、得られた高温ろう材を幅10mm、厚み10mm、長さ50mmの板状に切削加工し、冷間圧延で厚み0.1mmまで圧延を行った。0.1mmまで板が切断されなかった場合を「良」と評価し、圧延中にクラックが発生したり、板が切断された場合を「不良」と評価した。評価結果を、表1に示す。 As evaluation of plastic workability, the obtained high-temperature brazing material was cut into a plate shape having a width of 10 mm, a thickness of 10 mm, and a length of 50 mm, and rolled to a thickness of 0.1 mm by cold rolling. The case where the plate was not cut to 0.1 mm was evaluated as “good”, and the case where a crack occurred during rolling or the plate was cut was evaluated as “bad”. The evaluation results are shown in Table 1.
表1に示されるように、比較例1〜8で得られた高温ろう材は、Niめっき面への濡れ性が不良であり、比較例1、5、7、8で得られた高温ろう材は、銅面への濡れ性も不良であった。 As shown in Table 1, the high temperature brazing material obtained in Comparative Examples 1 to 8 has poor wettability to the Ni plating surface, and the high temperature brazing material obtained in Comparative Examples 1, 5, 7, and 8. The wettability to the copper surface was also poor.
また、実施例1〜22で得られた高温ろう材は、CuやNiに対しても良好な濡れ性が得られ、塑性加工性も良好であり、電子部品や機械部品の組み立てにおける高温はんだ付け用に好適であり、広範囲に適用できることがわかる。 Moreover, the high temperature brazing material obtained in Examples 1 to 22 has good wettability with respect to Cu and Ni, and has good plastic workability, and high temperature soldering in the assembly of electronic parts and mechanical parts. It can be seen that it is suitable for a wide range of applications.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011251298A (en) * | 2010-05-31 | 2011-12-15 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY CONSISTING MAINLY OF Zn |
WO2012077415A1 (en) * | 2010-12-08 | 2012-06-14 | 住友金属鉱山株式会社 | Pb-FREE SOLDER ALLOY HAVING Zn AS MAIN COMPONENT |
JP2013052433A (en) * | 2011-09-06 | 2013-03-21 | Sumitomo Metal Mining Co Ltd | SOLDER ALLOY OF Pb-FREE Zn SYSTEM |
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2006
- 2006-02-07 JP JP2006029448A patent/JP2007209989A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011251298A (en) * | 2010-05-31 | 2011-12-15 | Sumitomo Metal Mining Co Ltd | Pb-FREE SOLDER ALLOY CONSISTING MAINLY OF Zn |
WO2012077415A1 (en) * | 2010-12-08 | 2012-06-14 | 住友金属鉱山株式会社 | Pb-FREE SOLDER ALLOY HAVING Zn AS MAIN COMPONENT |
JP2012121053A (en) * | 2010-12-08 | 2012-06-28 | Sumitomo Metal Mining Co Ltd | Lead free soldering alloy containing zinc as principal component |
GB2498912A (en) * | 2010-12-08 | 2013-07-31 | Sumitomo Metal Mining Co | Pb-Free Solder Alloy Having Zn as Main Component |
CN103249519A (en) * | 2010-12-08 | 2013-08-14 | 住友金属矿山株式会社 | Pb-free solder alloy having Zn as main component |
US8845828B2 (en) | 2010-12-08 | 2014-09-30 | Sumitomo Metal Mining Co., Ltd. | Pb-free solder alloy mainly containing Zn |
CN103249519B (en) * | 2010-12-08 | 2015-04-29 | 住友金属矿山株式会社 | Pb-free solder alloy having Zn as main component |
DE112011104328B4 (en) * | 2010-12-08 | 2015-09-24 | Sumitomo Metal Mining Co., Ltd. | Pb-free solder alloy containing predominantly Zn |
JP2013052433A (en) * | 2011-09-06 | 2013-03-21 | Sumitomo Metal Mining Co Ltd | SOLDER ALLOY OF Pb-FREE Zn SYSTEM |
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