JP2007197266A - Ceramic member and its producing method - Google Patents
Ceramic member and its producing method Download PDFInfo
- Publication number
- JP2007197266A JP2007197266A JP2006018839A JP2006018839A JP2007197266A JP 2007197266 A JP2007197266 A JP 2007197266A JP 2006018839 A JP2006018839 A JP 2006018839A JP 2006018839 A JP2006018839 A JP 2006018839A JP 2007197266 A JP2007197266 A JP 2007197266A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic member
- ceramic
- contact angle
- sic
- surface roughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
本発明は、セラミック部材およびその製造方法に関するもので、特に、半導体製造装置や液晶製造装置のように装置内部の雰囲気を精密に制御する必要がある分野で、かつ、部材表面から発生する吸着水分を低減することを必要とする各産業分野で好適に用いられるセラミック部材およびその製造方法に関するものである。 The present invention relates to a ceramic member and a method for manufacturing the same, and particularly to a field where the atmosphere inside the apparatus needs to be precisely controlled, such as a semiconductor manufacturing apparatus and a liquid crystal manufacturing apparatus, and adsorbed moisture generated from the surface of the member. The present invention relates to a ceramic member that is suitably used in each industrial field that requires a reduction in the amount and a manufacturing method thereof.
従来より、半導体製造装置や液晶製造装置のように機械的強度や耐食性等を要求されるセラミック部材としては、AlN、Al2O3、SiC、Si3N4から選ばれる一種の材料を主成分として95重量%以上含むセラミック部材が物理的特性および化学的特性に優れているために使用されている。 Conventionally, ceramic materials that require mechanical strength and corrosion resistance such as semiconductor manufacturing equipment and liquid crystal manufacturing equipment are mainly composed of a material selected from AlN, Al 2 O 3 , SiC, and Si 3 N 4. The ceramic member containing 95% by weight or more is used because of its excellent physical and chemical properties.
ここで、半導体製造装置や液晶製造装置などはそのプロセス上、装置内の雰囲気を制御する必要がある。そのひとつとして、水分の制御があげられる。その理由は、装置内の雰囲気中に水分が多く存在すると不純物として製品としての半導体や液晶の特性や信頼性が低下する問題が発生するからである。 Here, the semiconductor manufacturing apparatus, the liquid crystal manufacturing apparatus, and the like need to control the atmosphere in the apparatus in the process. One of them is moisture control. The reason is that if a large amount of moisture is present in the atmosphere in the apparatus, there will be a problem that the characteristics and reliability of the semiconductor and the liquid crystal as a product deteriorate as impurities.
水分の発生起源としては、装置内の部材に吸着している水分が挙げられるが、この吸着水分は部材の濡れ性と深い係わりがあることが知られている。
ここで、部材表面の濡れ性を制御方法する表面処理方法としては、(1)部材表面を機械的にブラスト処理する方法、(2)部材表面をシラン化合物などの無機物および高分子有機物による化学的処理する方法(例えば、特許文献1参照)、(3)部材表面をスパッタや放電、プラズマなどの物理的処理する方法(例えば、特許文献2参照)、等が行われている。
Here, the surface treatment method for controlling the wettability of the member surface includes (1) a method of mechanically blasting the member surface, and (2) a chemical treatment of the member surface with an inorganic substance such as a silane compound and a polymer organic substance. A method of processing (see, for example, Patent Document 1), a method of (3) physical processing of the member surface such as sputtering, discharge, plasma, etc. (for example, see Patent Document 2) are performed.
ところが、前記した部材表面を機械的にブラスト処理する方法は、表面を機械加工することになるため、表面粗さのような形状精度が制御しにくいなどの課題がある。
また、部材表面をシラン化合物などの無機物および高分子有機物による化学的処理する方法合は、化学的処理に用いた材料に依存して使用温度が限られてくるため用途に制限が加えられるという課題がある。
また、部材表面をスパッタや放電、プラズマなどの物理的処理する方法は、部材により表面が荒らされ、上記同様に表面粗さのような形状精度が制御しにくいなどの課題がある。
However, the above-described method of mechanically blasting the surface of the member involves machining the surface, and thus there is a problem that it is difficult to control the shape accuracy such as the surface roughness.
In addition, the method of chemically treating the surface of a member with an inorganic material such as a silane compound and a high molecular weight organic material has a problem that the use temperature is limited depending on the material used for the chemical treatment, so that the application is restricted. There is.
Further, the method of physically treating the surface of the member such as sputtering, discharge, or plasma has a problem that the surface is roughened by the member, and the shape accuracy such as the surface roughness is difficult to control as described above.
特に、部材表面に異物質をコーティングする処理方法は、コーティング物質それ自体が汚染源になる可能性があり、プロセス上の問題となっていた。
さらに、従来の部材表面の処理方法は、いずれも処理するための装置が高額であるため処理コストが高くなることや処理手順が煩雑であるという課題もあった。
In particular, the processing method for coating the surface of a member with a foreign substance has a possibility of becoming a source of contamination, which is a process problem.
Furthermore, the conventional methods for treating the surface of a member also have problems that the cost for processing is high and the processing procedure is complicated because the apparatus for processing them is expensive.
したがって、本発明の目的は、このような課題を解決するためになされたものであり、簡便かつ部材を汚染することのない方法で、表面の濡れ性を制御したセラミックス部材およびその製造方法を提供することにある。 Accordingly, an object of the present invention is to solve such problems, and provides a ceramic member whose surface wettability is controlled in a simple and non-contaminating manner, and a method for manufacturing the same. There is to do.
前記した本発明の目的は、AlN、Al2O3、SiC、Si3N4から選ばれる一種の材料を主成分として95重量%以上含むセラミック部材であって、該セラミック部材の表面粗さRaが0.5μm以下であり、かつ、該セラミック部材表面の水滴との接触角が60°〜120°であることを特徴とするセラミック部材によって達成される。 An object of the present invention is a ceramic member containing 95% by weight or more of a material selected from AlN, Al 2 O 3 , SiC, and Si 3 N 4 as a main component, the surface roughness Ra of the ceramic member Is 0.5 μm or less, and the contact angle with water droplets on the surface of the ceramic member is 60 ° to 120 °.
また、前記した本発明の目的は、AlN、Al2O3、SiC、Si3N4から選ばれる一種の材料を主成分として95重量%以上含むセラミック部材の表面粗さRaを0.5μm以下に研磨する工程と、該セラミック部材を400〜900℃で加熱処理する工程と、該セラミック部材をアルコール中に浸漬する工程と、該セラミック部材を100℃以上で乾燥する工程と、を含むことを特徴とする前記のセラミック部材の製造方法によって達成される。 Another object of the present invention is to provide a surface roughness Ra of 0.5 μm or less for a ceramic member containing 95% by weight or more of a material selected from AlN, Al 2 O 3 , SiC, and Si 3 N 4 as a main component. Polishing the ceramic member, heating the ceramic member at 400 to 900 ° C., immersing the ceramic member in alcohol, and drying the ceramic member at 100 ° C. or higher. This is achieved by the above-described method for manufacturing a ceramic member.
本発明によれば、簡便かつ部材を汚染することのない方法で、表面の濡れ性を制御したセラミックス部材およびその製造方法を提供できる。 ADVANTAGE OF THE INVENTION According to this invention, the ceramic member which controlled the wettability of the surface by the method which is simple and does not contaminate a member, and its manufacturing method can be provided.
本発明では、AlN、Al2O3、SiC、Si3N4から選ばれる一種の材料を主成分として95重量%以上含むセラミック部材であって、該セラミック部材の表面粗さRaが0.5μm以下であり、かつ、該セラミック部材表面の水滴との接触角が60°〜120°であることを特徴とするセラミック部材を提案している。 In the present invention, the ceramic member contains 95% by weight or more of a material selected from AlN, Al 2 O 3 , SiC, and Si 3 N 4 as a main component, and the surface roughness Ra of the ceramic member is 0.5 μm. The ceramic member is characterized in that the contact angle with water droplets on the surface of the ceramic member is 60 ° to 120 °.
ここで、AlN、Al2O3、SiC、Si3N4から選ばれる一種の材料を主成分として95重量%以上含む材料を本発明のセラミック部材とした理由は、これらの材料からなるセラミック部材が物理的特性および化学的特性に優れているため、半導体製造装置や液晶製造装置のように機械的強度や耐食性等を要求されるセラミック部材として好適であるからである。 Here, the reason why the ceramic member of the present invention includes a material containing 95% by weight or more of a material selected from AlN, Al 2 O 3 , SiC, and Si 3 N 4 as a main component is a ceramic member made of these materials. This is because it is excellent in physical characteristics and chemical characteristics, and is suitable as a ceramic member that requires mechanical strength, corrosion resistance, and the like, such as a semiconductor manufacturing apparatus and a liquid crystal manufacturing apparatus.
次に、本発明のセラミック部材の表面粗さRaが0.5μm以下である理由は、セラミック部材の表面粗さRaが0.5μmを超えて大きいと 表面の粗さが粗くなるため、吸着水分が表面処理条件の影響を受けにくくなり、このためセラミック部材表面の水滴との接触角を精度良く制御できなくなるからである。 Next, the reason why the surface roughness Ra of the ceramic member of the present invention is 0.5 μm or less is that if the surface roughness Ra of the ceramic member is larger than 0.5 μm, the surface roughness becomes rough. This is because the contact angle with the water droplets on the surface of the ceramic member cannot be accurately controlled.
次に、本発明では、セラミック部材表面の水滴との接触角が60°〜120°であることを提案している。その理由は、セラミック部材表面の水滴との接触角が60°未満となるとセラミック部材表面の吸着水量が多くなり不純物として製品としての半導体や液晶の特性や信頼性が低下する問題が発生するからである。また、セラミック部材表面の水滴との接触角を120°を超えて大きくすることは技術的に困難であるからである。
ここで、接触角とは、セラミック部材表面の濡れ性を評価する値であって、公知の液滴法により測定されたものである。
Next, in this invention, it is proposed that the contact angle with the water droplet on the surface of a ceramic member is 60 degrees-120 degrees. The reason is that if the contact angle with water droplets on the surface of the ceramic member is less than 60 °, the amount of water adsorbed on the surface of the ceramic member increases, which causes problems that the characteristics and reliability of semiconductors and liquid crystals as products deteriorate. is there. Further, it is technically difficult to increase the contact angle with water droplets on the surface of the ceramic member beyond 120 °.
Here, the contact angle is a value for evaluating the wettability of the surface of the ceramic member, and is measured by a known droplet method.
次に、本発明では、AlN、Al2O3、SiC、Si3N4から選ばれる一種の材料を主成分として95重量%以上含むセラミック部材の表面粗さRaを0.5μm以下に研磨する工程と、該セラミック部材を400〜900℃で加熱処理する工程と、該セラミック部材をアルコール中に浸漬する工程と、該セラミック部材を100℃以上で乾燥する工程と、を含むことを特徴とする前記のセラミック部材の製造方法を提案している。 Next, in the present invention, the surface roughness Ra of the ceramic member containing 95% by weight or more of a material selected from AlN, Al 2 O 3 , SiC, and Si 3 N 4 as a main component is polished to 0.5 μm or less. And a step of heat-treating the ceramic member at 400 to 900 ° C., a step of immersing the ceramic member in alcohol, and a step of drying the ceramic member at 100 ° C. or more. The manufacturing method of the said ceramic member is proposed.
ここで、AlN、Al2O3、SiC、Si3N4から選ばれる一種の材料を主成分として95重量%以上含むセラミック部材の表面粗さRaを0.5μm以下に研磨する理由は前記したとおりである。 Here, the reason for polishing the surface roughness Ra of the ceramic member containing 95% by weight or more mainly composed of one kind of material selected from AlN, Al 2 O 3 , SiC, and Si 3 N 4 to 0.5 μm or less is as described above. It is as follows.
また、該セラミック部材を400〜900℃で加熱処理する理由は、セラミック部材表面の吸着水を除去するためである。ここで、400℃未満では吸着水を十分に除去できず、900℃を超える加熱処理ではセラミック部材表面が酸化するため好ましくない。
また、本発明で、セラミック部材をアルコール中に浸漬する工程と、該セラミック部材を100℃以上で乾燥する理由は、これらの処理によりセラミック部材表面の水滴との接触角を60°〜120°に好適に制御することができるからである。
The reason why the ceramic member is heat-treated at 400 to 900 ° C. is to remove adsorbed water on the surface of the ceramic member. Here, if it is less than 400 ° C., the adsorbed water cannot be sufficiently removed, and heat treatment exceeding 900 ° C. is not preferable because the surface of the ceramic member is oxidized.
In the present invention, the step of immersing the ceramic member in alcohol and the reason for drying the ceramic member at 100 ° C. or higher are that the contact angle with water droplets on the surface of the ceramic member is 60 ° to 120 ° by these treatments. It is because it can control suitably.
ここで、セラミック部材をアルコール中に浸漬する工程において、アルコールとしてはメタノールまたはエタノールを好適に用いることができる。
また、セラミック部材をアルコール中に浸漬する工程において、セラミック部材をアルコール中に浸漬すしながら超音波をかけることが、さらに効率的である。
また、セラミック部材を乾燥する温度としては、100〜250℃がさらに好ましい。
Here, in the step of immersing the ceramic member in alcohol, methanol or ethanol can be suitably used as the alcohol.
In the step of immersing the ceramic member in alcohol, it is more efficient to apply ultrasonic waves while immersing the ceramic member in alcohol.
Moreover, as temperature which dries a ceramic member, 100-250 degreeC is further more preferable.
以下、本発明の実施例を具体的に挙げ、本発明をより詳細に説明する。
実施例で使用したセラミックス部材の作成方法を以下に示す。
(1)Al2O3の作製方法
市販品のAl2O3粉末にアクリル系バインダーを数重量%添加し、一軸プレス機で10kg/cm2の圧力をかけて成形を行った。この成形体を1600℃-4hrの温度条件で常圧焼結し、φ60×5mmのセラミック部材を作製した。このセラミック部材の上下面を1mmずつ研磨加工し、セラミック部材の表面粗さRaが0.5μm以下となる平坦な面を作製した。
(2)AlNの作製方法
市販品のAlN粉末に希土類酸化物の焼結助剤を数重量%添加し、IPAを溶媒として混合した。その後、乾燥により溶媒を除去して混合粉末を作製した。この粉末を1800℃−4hrの温度条件と100kg/cm2の圧力条件でホットプレス焼結し、φ60×5mmの焼結体を作製した。このセラミック部材の上下面を1mmずつ研磨加工し、セラミック部材の表面粗さRaが0.5μm以下となる平坦な面を作製した。
(3)SiCの作製方法
市販品のSiC粉末に酸化物系焼結助剤を数重量%添加し、IPAを溶媒として混合した。その後、乾燥により溶媒を除去して混合粉末を作製した。この粉末を1950℃−2hrの温度条件と60kg/cm2の圧力条件でホットプレス焼結し、φ60×5mmの焼結体を作製した。この焼結体の上下面を1mmずつ加工し、平坦な面を作製した。
(4)Si3N4の作製方法
市販品のSiC粉末に酸化物系焼結助剤を数重量%添加し、IPAを溶媒として混合した。その後、乾燥により溶媒を除去して混合粉末を作製した。この粉末を1750℃−2hrの温度条件と80kg/cm2の圧力条件でホットプレス焼結し、φ60×5mmの焼結体を作製した。このセラミック部材の上下面を1mmずつ研磨加工し、セラミック部材の表面粗さRaが0.5μm以下となる平坦な面を作製した。
Examples of the present invention will be specifically described below to explain the present invention in more detail.
A method for producing the ceramic member used in the examples is shown below.
(1) Al 2 O the acrylic binder was added a few weight percent 3 of a method for manufacturing commercially Al 2 O 3 powder were molded by applying a pressure of 10 kg / cm 2 in a uniaxial press. This compact was sintered under normal pressure at a temperature of 1600 ° C. for 4 hours to produce a ceramic member of φ60 × 5 mm. The upper and lower surfaces of the ceramic member were polished by 1 mm each to produce a flat surface having a surface roughness Ra of 0.5 μm or less.
(2) Preparation method of AlN Several weight percent of a rare earth oxide sintering aid was added to a commercially available AlN powder, and IPA was mixed as a solvent. Thereafter, the solvent was removed by drying to prepare a mixed powder. This powder was hot-press sintered under a temperature condition of 1800 ° C.-4 hr and a pressure condition of 100 kg / cm 2 to produce a sintered body of φ60 × 5 mm. The upper and lower surfaces of the ceramic member were polished by 1 mm each to produce a flat surface having a surface roughness Ra of 0.5 μm or less.
(3) Method for producing SiC A few percent by weight of an oxide-based sintering aid was added to commercially available SiC powder, and IPA was mixed as a solvent. Thereafter, the solvent was removed by drying to prepare a mixed powder. This powder was hot-press sintered under a temperature condition of 1950 ° C.-2 hr and a pressure condition of 60 kg / cm 2 to prepare a sintered body of φ60 × 5 mm. The upper and lower surfaces of this sintered body were processed 1 mm at a time to produce flat surfaces.
(4) Method for producing Si 3 N 4 Oxide-based sintering aid was added to commercially available SiC powder by several weight%, and IPA was mixed as a solvent. Thereafter, the solvent was removed by drying to prepare a mixed powder. This powder was hot-press sintered under a temperature condition of 1750 ° C.-2 hr and a pressure condition of 80 kg / cm 2 to produce a sintered body of φ60 × 5 mm. The upper and lower surfaces of the ceramic member were polished by 1 mm each to produce a flat surface having a surface roughness Ra of 0.5 μm or less.
このようにして作成したセラミック部材から、30×10×3mmの供試体を切り出し、各供試体を大気中で500℃の温度で2時間加熱処理を行った。
加熱処理後の各供試体をメタノールもしくはエタノール中に浸漬して超音波を10分かけた。その後、各供試体を取り出し、大気中で100℃の温度で1時間加熱乾燥させた。
次に、このような表面処理を行った供試体表面の水滴との接触角を測定した。接触角の測定は代表的な方法である液滴法を用い、接触角の測定装置としては協和界面科学製-CA-X型を用いて行った。なお、接触角の測定面は、表面粗さRaが0.5μm以下となるようにした研磨面で行った。
得られた接触角の測定結果(実施例である。)を各セラミック部材のアルコール浸漬処理前の接触角(比較例である。)の測定結果と合わせて表1にまとめて示した。
A 30 × 10 × 3 mm specimen was cut out from the ceramic member thus prepared, and each specimen was heat-treated at 500 ° C. for 2 hours in the atmosphere.
Each specimen after the heat treatment was immersed in methanol or ethanol and subjected to ultrasonic waves for 10 minutes. Thereafter, each specimen was taken out and dried by heating in the atmosphere at a temperature of 100 ° C. for 1 hour.
Next, the contact angle with water droplets on the surface of the specimen subjected to such surface treatment was measured. The contact angle was measured using a droplet method, which is a typical method, and the contact angle measuring device was a Kyowa Interface Science-CA-X model. The contact angle measurement surface was a polished surface with a surface roughness Ra of 0.5 μm or less.
The obtained contact angle measurement results (examples) are shown together in Table 1 together with the measurement results of the contact angles of each ceramic member before the alcohol immersion treatment (comparative examples).
表1の結果から明らかなように、本発明によれば、セラミック部材表面の水滴との接触角が60°〜120°となるセラミック部材を効率的に得られることが分かった。 As is clear from the results in Table 1, according to the present invention, it was found that a ceramic member having a contact angle with water droplets on the surface of the ceramic member of 60 ° to 120 ° can be obtained efficiently.
また、本発明と全く同様にして得られたセラミック部材を実際に半導体製造装置用のセラミック部材として搭載したところ、セラミック部材表面の吸着水量が基準値以下と少なくなり製品としての半導体の特性や信頼性が低下する問題が発生しなかった。 In addition, when a ceramic member obtained in exactly the same manner as in the present invention is actually mounted as a ceramic member for a semiconductor manufacturing apparatus, the amount of adsorbed water on the surface of the ceramic member is reduced below a reference value, and the characteristics and reliability of the semiconductor as a product are reduced. There was no problem of lowering the performance.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006018839A JP4795798B2 (en) | 2006-01-27 | 2006-01-27 | Ceramic member and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006018839A JP4795798B2 (en) | 2006-01-27 | 2006-01-27 | Ceramic member and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007197266A true JP2007197266A (en) | 2007-08-09 |
JP4795798B2 JP4795798B2 (en) | 2011-10-19 |
Family
ID=38452234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006018839A Expired - Fee Related JP4795798B2 (en) | 2006-01-27 | 2006-01-27 | Ceramic member and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4795798B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012124802A1 (en) * | 2011-03-16 | 2012-09-20 | 日清フーズ株式会社 | Die piece for injection molded noodles |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS645443A (en) * | 1987-06-26 | 1989-01-10 | Kyocera Corp | Die for producing spaghetti noodle |
JPH08144042A (en) * | 1994-11-22 | 1996-06-04 | Toshiba Corp | Production of ceramic coating film |
JP2003311230A (en) * | 2002-04-19 | 2003-11-05 | Sumitomo Special Metals Co Ltd | Method for cleaning sintered compact |
JP2004182516A (en) * | 2002-12-02 | 2004-07-02 | Tokai Univ | Method of photochemically modifying solid material surface |
JP2005000911A (en) * | 2003-05-21 | 2005-01-06 | Nihon Ceratec Co Ltd | Method for cleaning ceramic member |
JP2005188651A (en) * | 2003-12-25 | 2005-07-14 | Yamada Seisakusho Co Ltd | Mechanical seal in water pump |
-
2006
- 2006-01-27 JP JP2006018839A patent/JP4795798B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS645443A (en) * | 1987-06-26 | 1989-01-10 | Kyocera Corp | Die for producing spaghetti noodle |
JPH08144042A (en) * | 1994-11-22 | 1996-06-04 | Toshiba Corp | Production of ceramic coating film |
JP2003311230A (en) * | 2002-04-19 | 2003-11-05 | Sumitomo Special Metals Co Ltd | Method for cleaning sintered compact |
JP2004182516A (en) * | 2002-12-02 | 2004-07-02 | Tokai Univ | Method of photochemically modifying solid material surface |
JP2005000911A (en) * | 2003-05-21 | 2005-01-06 | Nihon Ceratec Co Ltd | Method for cleaning ceramic member |
JP2005188651A (en) * | 2003-12-25 | 2005-07-14 | Yamada Seisakusho Co Ltd | Mechanical seal in water pump |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012124802A1 (en) * | 2011-03-16 | 2012-09-20 | 日清フーズ株式会社 | Die piece for injection molded noodles |
CN103369964A (en) * | 2011-03-16 | 2013-10-23 | 日清食品株式会社 | Die piece for injection molded noodles |
US8956141B2 (en) | 2011-03-16 | 2015-02-17 | Nisshin Foods Inc. | Die piece for extrusion molded noodles |
Also Published As
Publication number | Publication date |
---|---|
JP4795798B2 (en) | 2011-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9017765B2 (en) | Protective coatings resistant to reactive plasma processing | |
KR102193589B1 (en) | Method for manufacturing aluminium-graphene composites having enhanced thermal conductivity | |
JP5537001B2 (en) | Surface-treated ceramic member, manufacturing method thereof, and vacuum processing apparatus | |
JP5593529B2 (en) | Black zirconia reinforced alumina ceramic and method for producing the same | |
Chen et al. | Water-induced degradation in lead zirconate titanate piezoelectric ceramics | |
CN112219273B (en) | Electrostatic chuck and method of manufacturing the same | |
JP5159625B2 (en) | Aluminum nitride sintered body and method for producing the same | |
WO2018194052A1 (en) | Sintered body, board, circuit board, and method for manufacturing sintered body | |
JP5406565B2 (en) | Aluminum oxide sintered body, manufacturing method thereof, and semiconductor manufacturing apparatus member | |
JPWO2003040059A1 (en) | Manufacturing method of silicon carbide sintered body jig used for semiconductor manufacturing and silicon carbide sintered body jig obtained by the manufacturing method | |
JP4795798B2 (en) | Ceramic member and manufacturing method thereof | |
JP2006021990A (en) | Yttria ceramic component for use in plasma treatment device and its manufacturing method | |
JP4939379B2 (en) | Aluminum nitride sintered body for electrostatic chuck | |
US20160276141A1 (en) | Semiconductor processing apparatus with protective coating including amorphous phase | |
KR101559243B1 (en) | Ceramic composition, ceramic sinter and manufacturing method thereof | |
JPH09328376A (en) | Production of ceramic member for semiconductor production unit | |
JP2007326744A (en) | Plasma resistant ceramic member | |
JP2005145810A (en) | Surface modification method of oxide ceramics using glass and surface modified oxide ceramics | |
CN111089774A (en) | Surface corrosion treatment method of boron carbide product, metallographic sample and preparation method of metallographic sample | |
JP2008174801A (en) | Member for plasma processor | |
JP2002319614A (en) | Electrostatic chuck | |
JP2007207959A (en) | Member for electrostatic chuck and method for adjusting its surface resistance | |
JP4585129B2 (en) | Electrostatic chuck | |
JP2009203113A (en) | Ceramics for plasma treatment apparatus | |
JP2004292267A (en) | Alumina sintered body and its production method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080123 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20100810 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110524 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110705 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110726 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110728 |
|
R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140805 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |