JP2007207959A - Member for electrostatic chuck and method for adjusting its surface resistance - Google Patents

Member for electrostatic chuck and method for adjusting its surface resistance Download PDF

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Publication number
JP2007207959A
JP2007207959A JP2006024020A JP2006024020A JP2007207959A JP 2007207959 A JP2007207959 A JP 2007207959A JP 2006024020 A JP2006024020 A JP 2006024020A JP 2006024020 A JP2006024020 A JP 2006024020A JP 2007207959 A JP2007207959 A JP 2007207959A
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Prior art keywords
electrostatic chuck
surface resistance
insulating layer
chuck member
upper insulating
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JP2006024020A
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Japanese (ja)
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Tamotsu Harada
保 原田
Hironori Ishida
弘徳 石田
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Taiheiyo Cement Corp
NTK Ceratec Co Ltd
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Nihon Ceratec Co Ltd
Taiheiyo Cement Corp
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Priority to JP2006024020A priority Critical patent/JP2007207959A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a member for an electrostatic chuck and a method for adjusting the surface resistance of the member adjusting the surface resistance by a simple method that does not cause contamination to a member for the electrostatic chuck. <P>SOLUTION: The member for the electrostatic chuck has a base, an electrode layer formed on the top face of the base, and an upper insulating layer formed on the base so as to coat the electrode layer. In the member of the electrostatic chuck, the base, and the upper insulating layer are composed of ceramic materials of the same kind mainly comprising one kind of a material selected from AlN, Al<SB>2</SB>O<SB>3</SB>and Si<SB>3</SB>N<SB>4</SB>. In the member, the surface resistance at a normal temperature of a contact surface with a substance attracted in the upper insulating layer is adjusted previously before shipment so as to reach 1.0×10<SP>14</SP>to 1.5×10<SP>16</SP>Ω/sq. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、静電チャック用部材およびその表面抵抗の調整方法に関するもので、特に、半導体や液晶製造工程において被吸着物であるシリコンウエハや液晶基板を吸着保持する静電チャック用部材およびその表面抵抗の調整方法に関するものである。 The present invention relates to an electrostatic chuck member and a method for adjusting the surface resistance thereof, and more particularly to an electrostatic chuck member for attracting and holding a silicon wafer or a liquid crystal substrate as an object to be adsorbed in a semiconductor or liquid crystal manufacturing process, and the surface thereof. The present invention relates to a resistance adjustment method.

たとえば、半導体製造過程および液晶製造過程における各種処理工程では、シリコンウエハや液晶基板を載置台上で確実に保持する必要がある。こうした要求に応える保持装置としては、静電作用を利用して被吸着物であるシリコンウエハや液晶基板を吸着保持する静電チャック装置が広く用いられおり、その装置に搭載される静電チャック用部材としては、基台と、この基台の上面に形成された電極層と、この電極層を被覆するように前記基台の上に形成された上部絶縁層とを具備してなるものが提案されている。 For example, in various processing steps in a semiconductor manufacturing process and a liquid crystal manufacturing process, it is necessary to securely hold a silicon wafer or a liquid crystal substrate on a mounting table. Electrostatic chuck devices that attract and hold silicon wafers and liquid crystal substrates, which are objects to be attracted, are widely used as holding devices that meet these requirements, and are used for electrostatic chucks mounted on such devices. As the member, a member comprising a base, an electrode layer formed on the upper surface of the base, and an upper insulating layer formed on the base so as to cover the electrode layer is proposed. Has been.

ここで近年、被吸着物の保持を確実とするために、静電チャック装置に搭載される静電チャック用部材の表面抵抗の調整が重要な課題となっている。その理由は、静電チャックのように高電圧が印加される部材の場合、その表面抵抗によっては印加できる電圧の値が制限されるからである。すなわち、静電チャック用部材の表面抵抗の小さいものでは発生するリーク電流のため十分な吸着力を得ようとすると静電チャック装置の許容電力を超えてしまうために好ましくなく、逆に、静電チャック用部材の表面抵抗が大きすぎると十分な吸着力が得られなくなるからである。 Here, in recent years, adjustment of the surface resistance of the electrostatic chuck member mounted on the electrostatic chuck device has become an important issue in order to ensure the holding of the attracted object. The reason is that in the case of a member to which a high voltage is applied, such as an electrostatic chuck, the value of the voltage that can be applied is limited depending on the surface resistance. That is, if the surface resistance of the electrostatic chuck member has a small surface resistance, it is not preferable to obtain a sufficient attracting force due to the leak current, which exceeds the allowable power of the electrostatic chuck device. This is because if the surface resistance of the chuck member is too large, a sufficient suction force cannot be obtained.

このような静電チャック用部材の表面抵抗に深い係わりを与えるものとしては、表面に吸着した水分があげられ、表面に吸着した水分が多い場合は、表面抵抗は小さくなり、逆に、表面に吸着した水分が少ない場合は、表面抵抗は大きくなることが知られている。したがって、静電チャック用部材の表面抵抗を調整することは重要である。 The thing which gives a deep relation to the surface resistance of such a member for electrostatic chuck is the moisture adsorbed on the surface, and when there is a lot of moisture adsorbed on the surface, the surface resistance becomes small, and conversely, It is known that the surface resistance increases when the adsorbed moisture is small. Therefore, it is important to adjust the surface resistance of the electrostatic chuck member.

従来から、部材の表面に吸着する水分量を制御方法する表面処理方法としては、(1)部材表面をシラン化合物などの無機物および高分子有機物による化学的処理する方法(例えば、特許文献1参照)、(2)部材表面をスパッタや放電、プラズマなどの物理的処理する方法(例えば、特許文献2参照)、等が行われている。
特開平10−180937号公報 特開平7−118857号公報
Conventionally, as a surface treatment method for controlling the amount of moisture adsorbed on the surface of a member, (1) a method of chemically treating the surface of a member with an inorganic substance such as a silane compound and a polymer organic substance (for example, see Patent Document 1) (2) A method in which the surface of the member is physically treated by sputtering, discharge, plasma, or the like (for example, see Patent Document 2) is performed.
Japanese Patent Laid-Open No. 10-180937 JP 7-118857 A

ところが、前記した部材表面をシラン化合物などの無機物および高分子有機物による化学的処理する方法合は、化学的処理に用いた材料に依存して使用温度が限られてくるため用途に制限が加えられるという課題がある。さらには、部材表面に異物質を処理するため、異物質それ自体が汚染源になる可能性があり、プロセス上の問題ともなっていた。   However, the method of chemically treating the surface of the member with an inorganic material such as a silane compound and a polymer organic material is limited in application because the use temperature is limited depending on the material used for the chemical treatment. There is a problem. Furthermore, since the foreign substance is treated on the surface of the member, the foreign substance itself may become a contamination source, which has been a problem in the process.

また、部材表面をスパッタや放電、プラズマなどの物理的処理する方法は、部材により表面が荒らされ、所望の表面粗さの制御ができなくなるという課題がある。
さらには、処理装置が高額であるため処理コストが高くなることや処理手順が煩雑であるという課題もあった。
In addition, the method of physically treating the surface of the member such as sputtering, discharge, or plasma has a problem that the surface is roughened by the member and a desired surface roughness cannot be controlled.
Furthermore, since the processing apparatus is expensive, there are problems that the processing cost is high and the processing procedure is complicated.

したがって、本発明の目的は、このような課題を解決するためになされたものであり、簡便かつ静電チャック用部材を汚染することのない方法で、表面抵抗を調整した静電チャック用部材およびその表面抵抗の調整方法を提供することにある。   Accordingly, an object of the present invention is to solve such a problem, and an electrostatic chuck member having a surface resistance adjusted by a method that is simple and does not contaminate the electrostatic chuck member. The object is to provide a method for adjusting the surface resistance.

前記した本発明の目的は、基台と、この基台の上面に形成された電極層と、この電極層を被覆するように前記基台の上に形成された上部絶縁層とを具備してなる静電チャック用部材であって、前記基台と上部絶縁層とがAlN、Al23、Si34から選ばれる一種の材料を主成分とする同種のセラミック材料によりなり、かつ、前記上部絶縁層の被吸着物との接触面の室温での表面抵抗が、予め1.0×1014〜1.5×1016Ω/□となるように出荷前に調整されていることを特徴とする静電チャック用部材によって達成される。 The object of the present invention described above includes a base, an electrode layer formed on the upper surface of the base, and an upper insulating layer formed on the base so as to cover the electrode layer. A member for an electrostatic chuck, wherein the base and the upper insulating layer are made of the same kind of ceramic material whose main component is a material selected from AlN, Al 2 O 3 , and Si 3 N 4 , and The surface resistance of the contact surface of the upper insulating layer with the object to be adsorbed is adjusted in advance so that the surface resistance at room temperature is 1.0 × 10 14 to 1.5 × 10 16 Ω / □ in advance. This is achieved by the featured electrostatic chuck member.

また、前記した本発明の目的は、前記静電チャック用部材の上部絶縁層の被吸着物との接触面の表面粗さRaを0.5μm以下に研磨する工程と、該静電チャック用部材を400〜900℃で加熱処理する工程と、該静電チャック用部材をアルコール中に浸漬する工程と、該セラミック部材を100℃以上で乾燥する工程と、を含むことを特徴とする前記の静電チャック用部材の表面抵抗の調整方法よって達成される。 Another object of the present invention is to polish the surface roughness Ra of the contact surface of the upper insulating layer of the electrostatic chuck member with the object to be adsorbed to 0.5 μm or less, and the electrostatic chuck member. The step of heat treating at 400 to 900 ° C., the step of immersing the electrostatic chuck member in alcohol, and the step of drying the ceramic member at 100 ° C. or more include the static This is achieved by a method for adjusting the surface resistance of the electric chuck member.

本発明によれば、簡便かつ静電チャック用部材を汚染することのない方法で、表面抵抗を調整した静電チャック用部材およびその表面抵抗の調整方法を提供できる。 ADVANTAGE OF THE INVENTION According to this invention, the member for electrostatic chucks which adjusted surface resistance by the method which is simple and does not contaminate the member for electrostatic chucks, and the adjustment method of the surface resistance can be provided.

本発明では、基台と、この基台の上面に形成された電極層と、この電極層を被覆するように前記基台の上に形成された上部絶縁層とを具備してなる静電チャック用部材であって、前記基台と上部絶縁層とがAlN、Al23、Si34から選ばれる一種の材料を主成分とする同種のセラミック材料によりなり、かつ、前記上部絶縁層の被吸着物との接触面の室温での表面抵抗が、予め1.0×1014〜1.5×1016Ω/□となるように出荷前に調整されていることを特徴とする静電チャック用部材を提案している。 In the present invention, an electrostatic chuck comprising a base, an electrode layer formed on the upper surface of the base, and an upper insulating layer formed on the base so as to cover the electrode layer A member for use in which the base and the upper insulating layer are made of the same kind of ceramic material mainly composed of one kind of material selected from AlN, Al 2 O 3 , and Si 3 N 4 , and the upper insulating layer The surface resistance of the contact surface with the object to be adsorbed at room temperature is adjusted in advance so as to be 1.0 × 10 14 to 1.5 × 10 16 Ω / □ before shipping. Proposal of electric chuck members.

ここで、静電チャック用部材の基台と上部絶縁層とがAlN、Al23、Si34から選ばれる一種の材料を主成分とする同種のセラミック材料によりなる理由は、これらの材料からなるセラミック部材が物理的特性および化学的特性に優れているため、半導体製造装置や液晶製造装置のように機械的強度や耐食性等を要求される静電チャック用部材のセラミックとして好適であるからである。
また、前記基台と上部絶縁層とが同種のセラミック材料によりなる理由は、焼結時の熱膨張の差による上部絶縁層の亀裂や剥離を防ぐためである。
さらに、静電チャック用部材のセラミックの焼結密度は98%以上であることが望ましい。その理由は、焼結密度が98%より低いと、表面の気孔が多くなり、気孔内に水分が多く残留し、静電チャック用部材として好適となるように表面抵抗を高くすることができないからである。
Here, the reason why the base of the electrostatic chuck member and the upper insulating layer are made of the same kind of ceramic material whose main component is a kind of material selected from AlN, Al 2 O 3 and Si 3 N 4 is that Ceramic members made of materials are excellent in physical and chemical properties, and are suitable as ceramics for electrostatic chuck members that require mechanical strength, corrosion resistance, etc., such as semiconductor manufacturing equipment and liquid crystal manufacturing equipment. Because.
The reason why the base and the upper insulating layer are made of the same kind of ceramic material is to prevent cracking and peeling of the upper insulating layer due to a difference in thermal expansion during sintering.
Furthermore, the sintered density of the ceramic of the electrostatic chuck member is desirably 98% or more. The reason is that if the sintered density is lower than 98%, the surface pores increase, and a large amount of moisture remains in the pores, so that the surface resistance cannot be increased so as to be suitable as an electrostatic chuck member. It is.

次に、上部絶縁層の被吸着物との接触面の室温での表面抵抗が、予め1.0×1014〜1.5×1016Ω/□となるように調整されている理由は、表面抵抗が、1.0×1014Ω/□未満では、発生するリーク電流のため十分な吸着力を得ようとすると静電チャック装置の許容電力を超えてしまうために好ましくなく、表面抵抗が、1.5×1016Ω/□を超えて大きくなると静電チャックとして十分な吸着力が得られなくなり好ましくないからである。 Next, the reason why the surface resistance of the contact surface of the upper insulating layer with the object to be adsorbed at room temperature is adjusted to 1.0 × 10 14 to 1.5 × 10 16 Ω / □ in advance is as follows. If the surface resistance is less than 1.0 × 10 14 Ω / □, an attempt to obtain a sufficient attracting force due to the generated leakage current will exceed the allowable power of the electrostatic chuck device. This is because if it exceeds 1.5 × 10 16 Ω / □, a sufficient attracting force cannot be obtained as an electrostatic chuck, which is not preferable.

また、このような表面抵抗の調整は静電チャック用部材の出荷前の最終工程に近い段階で予め調整されていることが好ましい。その理由は、初期の段階で表面抵抗を所望の値に調整しても静電チャック用部材の各製造工程での処理により、折角一旦調整した表面抵抗が変化して所望の値からはずれてしまう場合があるからである。 Further, it is preferable that the adjustment of the surface resistance is adjusted in advance at a stage close to the final process before shipment of the electrostatic chuck member. The reason for this is that even if the surface resistance is adjusted to a desired value at the initial stage, the surface resistance once adjusted is changed from the desired value due to the processing in each manufacturing process of the electrostatic chuck member. Because there are cases.

また、本発明では前記静電チャック用部材の上部絶縁層の被吸着物との接触面の表面粗さRaを0.5μm以下に研磨する工程と、該静電チャック用部材を400〜900℃で加熱処理する工程と、該静電チャック用部材をアルコール中に浸漬する工程と、該セラミック部材を100℃以上で乾燥する工程と、を含むことを特徴とする前記の静電チャック用部材の表面抵抗の調整方法を提案している。 In the present invention, the step of polishing the surface roughness Ra of the contact surface of the upper insulating layer of the electrostatic chuck member with the object to be adsorbed to 0.5 μm or less, and the electrostatic chuck member at 400 to 900 ° C. The electrostatic chuck member comprising: a step of performing a heat treatment at a step; a step of immersing the electrostatic chuck member in alcohol; and a step of drying the ceramic member at 100 ° C. or higher. A method for adjusting the surface resistance is proposed.

ここで、本発明で前記静電チャック用部材の上部絶縁層の被吸着物との接触面の表面粗さRaを0.5μm以下に研磨する理由は、静電チャック用部材の表面粗さRaが0.5μmを超えて大きいと 表面の粗さが粗くなるため、吸着水分を本発明の調整方法では制御できなくなるからである。したがって、静電チャック用部材の表面抵抗の調整を精度良くできなくなり好ましくない。 Here, the reason for polishing the surface roughness Ra of the contact surface of the upper insulating layer of the electrostatic chuck member with the object to be adsorbed to 0.5 μm or less in the present invention is the surface roughness Ra of the electrostatic chuck member. This is because if the thickness exceeds 0.5 μm, the roughness of the surface becomes rough, and the adsorbed moisture cannot be controlled by the adjustment method of the present invention. Therefore, it is not preferable because the surface resistance of the electrostatic chuck member cannot be accurately adjusted.

また、本発明で、静電チャック用部材を400〜900℃で加熱処理する理由は、静電チャック用部材表面の吸着水を除去するためである。ここで、400℃未満では吸着水を十分に除去できず、900℃を超える加熱処理では静電チャック用部材表面が劣化するため好ましくない。
次に、本発明では、静電チャック用部材をアルコール中に浸漬する工程と、静電チャック用部材を100℃以上で乾燥する工程と、を含んでいる。その理由は、これらの処理により、上部絶縁層の被吸着物との接触面の室温での表面抵抗を、1.0×1014〜1.5×1016Ω/□に調整することができるからである。
In the present invention, the reason for heat-treating the electrostatic chuck member at 400 to 900 ° C. is to remove the adsorbed water on the surface of the electrostatic chuck member. Here, if it is less than 400 ° C., the adsorbed water cannot be sufficiently removed, and heat treatment exceeding 900 ° C. is not preferable because the surface of the electrostatic chuck member deteriorates.
Next, in this invention, the process of immersing the member for electrostatic chucks in alcohol and the process of drying the member for electrostatic chucks at 100 degreeC or more are included. The reason is that the surface resistance at room temperature of the contact surface of the upper insulating layer with the object to be adsorbed can be adjusted to 1.0 × 10 14 to 1.5 × 10 16 Ω / □ by these treatments. Because.

ここで、静電チャック用部材をアルコール中に浸漬する工程において、アルコールとしてはメタノールまたはエタノールまたはイソプロピルアルコール(以下、IPAと略記する。)を好適に用いることができる。
また、静電チャック用部材をアルコール中に浸漬する工程において、静電チャック用部材をアルコール中に浸漬しながら超音波をかけることが、さらに効率的である。
また、静電チャック用部材を乾燥する温度としては、100〜250℃がさらに好ましい。
Here, in the step of immersing the electrostatic chuck member in alcohol, methanol, ethanol, or isopropyl alcohol (hereinafter abbreviated as IPA) can be suitably used as the alcohol.
In the step of immersing the electrostatic chuck member in alcohol, it is more efficient to apply ultrasonic waves while immersing the electrostatic chuck member in alcohol.
Further, the temperature for drying the electrostatic chuck member is more preferably 100 to 250 ° C.

以下、本発明の実施例を具体的に挙げ、本発明をより詳細に説明する。 Examples of the present invention will be specifically described below to explain the present invention in more detail.

(実施例)
(1)静電チャック用部材の製造
市販のAlN粉末に希土類酸化物の焼結助剤を表1に示した添加量で添加してなる混合粉末を、100kg/cm2(=9.8MPa)で一軸加圧し、φ200mm×10mmの盤状の成形体を作製した。(焼結後に、本発明の基台に相当する。)
次に、前記成形体の上にφ190mmの単極型電極(本発明の電極層に相当する。)を配置し、その上に前記した混合粉末を充填した(焼結後に、本発明の上部絶縁層に相当する。)後、焼成温度;1900℃、焼成時間;2時間、プレス圧;100kg/cm2の条件でホットプレス焼結を行うことで、φ200mm×15mmの盤状のセラミックスからなる静電チャック用部材を得た。
次に、得られた静電チャック用部材の上部絶縁層(電極上に充填した混合粉末により形成された層)の厚さが1mmになる様に研削し、反対側の面に孔をあけ、静電チャックへの電圧印加用端子を取り付けた。
(Example)
(1) Manufacture of electrostatic chuck member 100 kg / cm 2 (= 9.8 MPa) of a mixed powder obtained by adding a rare earth oxide sintering aid in a commercially available AlN powder in the addition amount shown in Table 1. Was pressed uniaxially to prepare a disk-shaped molded body of φ200 mm × 10 mm. (After sintering, it corresponds to the base of the present invention.)
Next, a φ190 mm monopolar electrode (corresponding to the electrode layer of the present invention) was placed on the molded body, and the mixed powder was filled thereon (after sintering, the upper insulation of the present invention). After that, by performing hot press sintering under the conditions of firing temperature: 1900 ° C., firing time: 2 hours, press pressure: 100 kg / cm 2 , a static made of plate-shaped ceramics of φ200 mm × 15 mm is obtained. An electric chuck member was obtained.
Next, grinding is performed so that the thickness of the upper insulating layer (the layer formed by the mixed powder filled on the electrode) of the obtained electrostatic chuck member becomes 1 mm, and a hole is formed on the opposite surface, A terminal for applying voltage to the electrostatic chuck was attached.

次に、静電チャック用部材の吸着面(本発明の上部絶縁層の被吸着物との接触面に相当する。)の表面粗さRaをバフ研磨加工により0.5μm以下に研磨した。 Next, the surface roughness Ra of the adsorption surface of the electrostatic chuck member (corresponding to the contact surface of the upper insulating layer of the present invention with the object to be adsorbed) was polished to 0.5 μm or less by buffing.

大気中で500℃で2時間加熱処理した後、メタノール、エタノールもしくはIPAで超音波洗浄を10分行い、大気中100℃の温度で1時間加熱乾燥させて本発明に係る静電チャック用部材を得た。
(2)静表面抵抗の評価
得られた静電チャック用部材の研磨面について、室温中、三端子法で表面抵抗を測定した結果を表1にまとめて示した。
After the heat treatment at 500 ° C. for 2 hours in the atmosphere, ultrasonic cleaning with methanol, ethanol or IPA is performed for 10 minutes, and the member for electrostatic chuck according to the present invention is dried by heating at a temperature of 100 ° C. for 1 hour in the atmosphere. Obtained.
(2) Evaluation of static surface resistance Table 1 shows the results of measuring the surface resistance of the obtained electrostatic chuck member by the three-terminal method at room temperature.

Figure 2007207959
Figure 2007207959

表1の結果から明らかなように、本発明によれば、静電チャック用部材の上部絶縁層の被吸着物との接触面の表面抵抗を、1.0×1014〜1.5×1016Ω/□となるように調整することができることが分かった。 As apparent from the results of Table 1, according to the present invention, the surface resistance of the contact surface of the upper insulating layer of the electrostatic chuck member with the object to be adsorbed is 1.0 × 10 14 to 1.5 × 10 6. It was found that the adjustment can be made to be 16 Ω / □.

(比較例)
実施例と同様にして静電チャック用部材を製造した。その後大気中で、500℃で2時間加熱処理を行った。次に、室温中、三端子法で静電チャック用部材の研磨面の表面抵抗を測定した結果を表2にまとめて示した。
(Comparative example)
An electrostatic chuck member was produced in the same manner as in the example. Thereafter, heat treatment was performed at 500 ° C. for 2 hours in the air. Next, Table 2 summarizes the results of measuring the surface resistance of the polished surface of the electrostatic chuck member by the three-terminal method at room temperature.

Figure 2007207959
Figure 2007207959

表2結果から明らかなように、実施例と異なり、アルコール中での浸漬処理と、100℃での乾燥処理を行わなかったので、静電チャック用部材の表面抵抗を、1.0×1014〜1.5×1016Ω/□となるように調整することができなかった。 As is clear from the results in Table 2, since the immersion treatment in alcohol and the drying treatment at 100 ° C. were not performed unlike the examples, the surface resistance of the electrostatic chuck member was set to 1.0 × 10 14. It could not be adjusted to be -1.5 × 10 16 Ω / □.

(Al23静電チャック用部材の実施例)
市販のAl23粉末を70kg/cm2(=6.89MPa)で一軸加圧し、φ200mm×10mmの盤状の成形体を作製した。(焼結後に、本発明の基台に相当する。)
次に、前記成形体の上にφ190mmの単極型電極(本発明の電極層に相当する。)を配置し、その上に前記した混合粉末を充填した(焼結後に、本発明の上部絶縁層に相当する。)後、焼成温度;1600℃、焼成時間;2時間、プレス圧;70kg/cm2の条件でホットプレス焼結を行うことで、φ200mm×15mmの盤状のセラミックスからなる静電チャック用部材を得た。
次に、得られた静電チャック用部材の上部絶縁層(電極上に充填した混合粉末により形成された層)の厚さが1mmになる様に研削し、反対側の面に孔をあけ、静電チャックへの電圧印加用端子を取り付けた。
(Example of member for Al 2 O 3 electrostatic chuck)
Commercially available Al 2 O 3 powder was uniaxially pressed at 70 kg / cm 2 (= 6.89 MPa) to produce a disk-shaped molded body having a diameter of 200 mm × 10 mm. (After sintering, it corresponds to the base of the present invention.)
Next, a φ190 mm monopolar electrode (corresponding to the electrode layer of the present invention) was placed on the molded body, and the mixed powder was filled thereon (after sintering, the upper insulation of the present invention). After that, by performing hot press sintering under the conditions of firing temperature: 1600 ° C., firing time: 2 hours, press pressure: 70 kg / cm 2 , a static made of plate-shaped ceramics of φ200 mm × 15 mm is obtained. An electric chuck member was obtained.
Next, grinding is performed so that the thickness of the upper insulating layer (the layer formed by the mixed powder filled on the electrode) of the obtained electrostatic chuck member becomes 1 mm, and a hole is formed on the opposite surface, A terminal for applying voltage to the electrostatic chuck was attached.

(Si34静電チャック用部材の実施例)
市販のSi34粉末に酸化マグネシウムを焼結助剤として0.5wt%と1.0wt%添加してなる混合粉末を、80kg/cm2(=7.84MPa)で一軸加圧し、φ200mm×10mmの盤状の成形体を作製した。(焼結後に、本発明の基台に相当する。)
次に、前記成形体の上にφ190mmの単極型電極(本発明の電極層に相当する。)を配置し、その上に前記した混合粉末を充填した(焼結後に、本発明の上部絶縁層に相当する。)後、焼成温度;1750℃、焼成時間;2時間、プレス圧;80kg/cm2の条件でホットプレス焼結を行うことで、φ200mm×15mmの盤状のセラミックスからなる静電チャック用部材を得た。
次に、得られた静電チャック用部材の上部絶縁層(電極上に充填した混合粉末により形成された層)の厚さが1mmになる様に研削し、反対側の面に孔をあけ、静電チャックへの電圧印加用端子を取り付けた。
(Example of member for Si 3 N 4 electrostatic chuck)
A mixed powder obtained by adding 0.5 wt% and 1.0 wt% of magnesium oxide as a sintering aid to commercially available Si 3 N 4 powder was uniaxially pressed at 80 kg / cm 2 (= 7.84 MPa), and φ200 mm × A 10 mm disk-shaped molded body was produced. (After sintering, it corresponds to the base of the present invention.)
Next, a φ190 mm monopolar electrode (corresponding to the electrode layer of the present invention) was placed on the molded body, and the mixed powder was filled thereon (after sintering, the upper insulation of the present invention). After that, by performing hot press sintering under the conditions of firing temperature: 1750 ° C., firing time: 2 hours, press pressure: 80 kg / cm 2 , a static made of plate-shaped ceramics of φ200 mm × 15 mm is obtained. An electric chuck member was obtained.
Next, grinding is performed so that the thickness of the upper insulating layer (the layer formed by the mixed powder filled on the electrode) of the obtained electrostatic chuck member becomes 1 mm, and a hole is formed on the opposite surface, A terminal for applying voltage to the electrostatic chuck was attached.

このようにして得られた、Al23静電チャック用部材およびAl23静電チャック用部材のそれぞれの静電チャック用部材の吸着面(本発明の上部絶縁層の被吸着物との接触面に相当する。)の表面粗さRaをバフ研磨加工により0.5μm以下に研磨した。
次に、大気中で500℃で2時間加熱処理した後、メタノール、エタノールもしくはIPAで超音波洗浄を10分行い、大気中100℃の温度で1時間加熱乾燥させて本発明に係る静電チャック用部材を得た。
得られたそれぞれの静電チャック用部材の研磨面について、室温中、三端子法で表面抵抗を測定した結果を表3にまとめて示した。
Thus obtained adsorption surfaces of the electrostatic chuck members of the Al 2 O 3 electrostatic chuck member and the Al 2 O 3 electrostatic chuck member (with the object to be adsorbed on the upper insulating layer of the present invention) The surface roughness Ra was polished to 0.5 μm or less by buffing.
Next, after heat treatment at 500 ° C. for 2 hours in the atmosphere, ultrasonic cleaning with methanol, ethanol, or IPA is performed for 10 minutes, and heat drying is performed at a temperature of 100 ° C. for 1 hour in the atmosphere, thereby the electrostatic chuck according to the present invention. A member was obtained.
Table 3 summarizes the results of measuring the surface resistance of each obtained electrostatic chuck member by the three-terminal method at room temperature.

Figure 2007207959
Figure 2007207959

表3の結果から明らかなように、本発明によれば、静電チャック用部材の上部絶縁層の被吸着物との接触面の表面抵抗を、1.0×1014〜1.5×1016Ω/□となるように調整することができることが分かった。 As is apparent from the results in Table 3, according to the present invention, the surface resistance of the contact surface of the upper insulating layer of the electrostatic chuck member with the object to be adsorbed is 1.0 × 10 14 to 1.5 × 10 6. It was found that the adjustment can be made to be 16 Ω / □.

また、本発明で得られた静電チャック用部材を実際に静電チャック装置として搭載したところ、リーク電流は基準設計値以内と小さく、十分な吸着力が得られることを確認できた。 Moreover, when the electrostatic chuck member obtained by the present invention was actually mounted as an electrostatic chuck device, the leakage current was small within the standard design value, and it was confirmed that a sufficient attracting force was obtained.

Claims (2)

基台と、この基台の上面に形成された電極層と、この電極層を被覆するように前記基台の上に形成された上部絶縁層とを具備してなる静電チャック用部材であって、前記基台と上部絶縁層とがAlN、Al23、Si34から選ばれる一種の材料を主成分とする同種のセラミック材料によりなり、かつ、前記上部絶縁層の被吸着物との接触面の室温での表面抵抗が、予め1.0×1014〜1.5×1016Ω/□となるように出荷前に調整されていることを特徴とする静電チャック用部材。 An electrostatic chuck member comprising a base, an electrode layer formed on the upper surface of the base, and an upper insulating layer formed on the base so as to cover the electrode layer. The base and the upper insulating layer are made of the same kind of ceramic material mainly composed of one kind of material selected from AlN, Al 2 O 3 , and Si 3 N 4 , and the adsorbent of the upper insulating layer The member for an electrostatic chuck, wherein the surface resistance of the contact surface at room temperature is adjusted in advance so as to be 1.0 × 10 14 to 1.5 × 10 16 Ω / □ in advance. . 前記静電チャック用部材の上部絶縁層の被吸着物との接触面の表面粗さRaを0.5μm以下に研磨する工程と、該静電チャック用部材を400〜900℃で加熱処理する工程と、該静電チャック用部材をアルコール中に浸漬する工程と、該セラミック部材を100℃以上で乾燥する工程と、を含むことを特徴とする請求項1記載の静電チャック用部材の表面抵抗の調整方法。 Polishing the surface roughness Ra of the contact surface of the upper insulating layer of the electrostatic chuck member with the object to be adsorbed to 0.5 μm or less, and heating the electrostatic chuck member at 400 to 900 ° C. The surface resistance of the electrostatic chuck member according to claim 1, comprising: a step of immersing the electrostatic chuck member in alcohol; and a step of drying the ceramic member at 100 ° C. or higher. Adjustment method.
JP2006024020A 2006-02-01 2006-02-01 Member for electrostatic chuck and method for adjusting its surface resistance Pending JP2007207959A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019204923A (en) * 2018-05-25 2019-11-28 ▲らん▼海精研股▲ふん▼有限公司 Method for manufacturing ceramic electrostatic chuck

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019204923A (en) * 2018-05-25 2019-11-28 ▲らん▼海精研股▲ふん▼有限公司 Method for manufacturing ceramic electrostatic chuck

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