JP2007184353A5 - - Google Patents

Claims (5)

A first stacking step of stacking an n-type cladding layer made of a nitride-based compound semiconductor on a substrate;
A second stacking step of stacking an active layer made of a nitride-based compound semiconductor on the n-type cladding layer;
While supplying nitrogen gas, hydrogen gas and ammonia gas at a temperature of 900 ° C. or higher and 1100 ° C. or lower, a p-type cladding layer made of a nitride compound semiconductor containing Mg and Mg is contained on the active layer A p-type cap layer made of a nitride compound semiconductor to be laminated in this order to form a laminated body;
After the third stacking step, the supply of the hydrogen gas and the ammonia gas is stopped, while the nitrogen gas or the nitrogen gas and the rare gas are supplied, and the stack is heated from 900 ° C. to 1100 ° C. to 450 ° C. A cooling step of cooling to a temperature of 550C to 550C;
A cooling step of cooling the laminated body cooled to a temperature of 450 ° C. or higher and 550 ° C. or lower to room temperature,
In the cooling step ,
Increasing the amount of gas supplied at 800 ° C. or higher to a total amount of the amount of nitrogen gas and the amount of hydrogen gas supplied in the third stacking step ,
A method for producing a nitride-based compound semiconductor device , wherein the laminate is cooled to a temperature of 450 ° C. to 550 ° C. at a cooling rate of 70 ° C./min to 100 ° C./min .   2. The method for producing a nitride-based compound semiconductor device according to claim 1, wherein in the third stacking step, a gas containing the rare gas of 5% (volume percentage) or less is supplied. 2. The nitride according to claim 1, wherein the substrate is made of a nitride-based compound semiconductor and has a threading dislocation density that is substantially uniform in a plane and is 3 × 10 ⁶ cm ⁻² or less. For manufacturing a semiconductor compound semiconductor device.   In the third stacking step, the Mg concentration of the p-type cap layer is set to 3 to 20 times the Mg concentration of the p-type cladding layer, and the thickness of the p-type cap layer is set to 60 nm or more. The method for producing a nitride-based compound semiconductor device according to claim 1. 2. The method for producing a nitride-based compound semiconductor device according to claim 1, further comprising an annealing step for heating the cooled laminated body at a temperature of 450 ° C. or higher and 550 ° C. or lower after the cooling step. Method.