JP2011238714A5

JP2011238714A5 -

Info

Publication number: JP2011238714A5
Application number: JP2010107764A
Authority: JP
Filing date: 2010-05-07
Publication date: 2012-10-11
Anticipated expiration: 2030-05-07

Claims

A first step of preparing a functional liquid material to be a functional solid material made of metal oxide ceramics or metal by heat treatment;
A second step of forming a precursor composition layer of the functional solid material by applying the functional liquid material on a substrate;
A third step of preliminarily lowering the fluidity of the precursor composition layer by heating the precursor composition layer to a first temperature in the range of 80 ° C. to 200 ° C .;
Heating the precursor composition layer to a fourth temperature in the range of 80 ° C. to 300 ° C. with the precursor composition layer heated to a second temperature in the range of 80 ° C. to 300 ° C. A fourth step of forming a stamping structure in the precursor composition layer by performing a stamping process using the mold that has been performed;
A fifth step of forming the functional solid material layer from the precursor composition layer by heat-treating the precursor composition layer at a third temperature higher than the second temperature in this order .
A method for manufacturing a functional device.

Before SL in the fourth step is subjected to embossing at a pressure in the range of 1MPa～20MPa,
The manufacturing method of the functional device of Claim 1 .

In the prior SL fourth step, after applying a release treatment to at least the backside treatment to the surface of the precursor composition layer or embossing surface of the mold, the embossing relative to the precursor composition layer Apply ,
The manufacturing method of the functional device of Claim 1 or Claim 2.

Before Symbol functional liquid material,
A solution containing a metal alkoxide,
A solution containing a metal organic acid salt,
A solution containing a metal inorganic acid salt,
A solution containing a metal halide,
A solution containing an inorganic compound containing metal, nitrogen and hydrogen,
A solution containing a metal hydride,
A solution containing metal nanoparticles or a solution containing ceramic fine particles ,
The manufacturing method of the functional device of any one of Claims 1-3.

Before Symbol functional liquid material, a solution containing a metal alkoxide, a solution containing a solution or metal inorganic salt containing a metal organic acid salt,
The volume shrinkage rate from the precursor composition layer to the functional solid material layer in the fourth step is in the range of 30% to 90% .
The manufacturing method of the functional device of Claim 4.

Before Symbol functional liquid material, a solution containing a metal halide, a metal, nitrogen and a solution containing an inorganic compound containing hydrogen, the solution containing the metal hydride, the solution or ceramic fine particles containing metal nanoparticles A solution containing
The volume shrinkage ratio from the precursor composition layer to the functional solid material layer in the fifth step is in the range of 1% to 30% .
The manufacturing method of the functional device of Claim 4.

In the prior SL fifth step, by heat treatment in an oxygen-containing atmosphere to form a functional solid material layer comprising a metal oxide ceramics,
The manufacturing method of the functional device of any one of Claims 4-6 .

In the fifth step, a functional solid material layer made of metal is formed by heat treatment in a reducing atmosphere.
The manufacturing method of the functional device of any one of Claims 4-6.

In the prior SL fourth step, by heat treatment in the fifth step, to form embossed structure as cracks most layer is thin region,
The manufacturing method of the functional device of any one of Claims 1-8 .

Between the front Symbol fourth step and the fifth step, so that the in the region most layer thickness is small of the precursor composition layer embossing is applied precursor composition layer is completely removed Further comprising a step of etching the precursor composition layer entirely under various conditions .
The manufacturing method of the functional device of any one of Claims 1-8 .

In the prior SL second step, as the substrate, using a substrate having two regions with different affinities for the precursor composition layer on the surface,
In the fourth step, in the first region having a relatively high affinity for the precursor composition layer in the two regions, the affinity for the precursor composition layer in the two regions is relatively high. Forming an embossed structure in the precursor composition layer such that the layer thickness is greater than in the lower second region ,
The manufacturing method of the functional device of Claim 9 or Claim 10.

The functional device is a thin film transistor;
The functional solid material layer is at least one of a gate electrode layer, a gate insulating layer, a source layer, a drain layer, a channel layer, and a wiring layer in the thin film transistor .
The manufacturing method of the functional device of any one of Claims 1-11.

Before Symbol functional device is an actuator comprising a piezoelectric layer,
The functional solid material layer is the piezoelectric layer .
The manufacturing method of the functional device of any one of Claims 1-11.

Before Symbol functional device is an optical device comprising a plurality of grating layer on a substrate,
The functional solid material layer is the lattice layer .
The manufacturing method of the functional device of any one of Claims 1-11.

An oxide conductor layer including source and drain regions and a channel region;
A gate electrode for controlling the conduction state of the channel region;
A gate insulating layer formed between the gate electrode and the channel region and made of a ferroelectric material or a paraelectric material;
The thin film transistor is characterized in that the channel region has a layer thickness smaller than that of the source region and the drain region.
13. The functional device according to claim 1 , wherein the oxide conductor layer has a layer thickness of the channel region that is thinner than a layer thickness of the source region and a layer thickness of the drain region. It is formed using a manufacturing method .
Thin-film transistor.

Carrier concentration and thickness of the front SL channel region, said thin film transistor is in the off state, the whole the channel region is set to a value such depleted, and
The carrier concentration of the channel region is in the range of 1 × 10 ¹⁵ cm ⁻³ to 1 × 10 ²¹ cm ⁻³ ,
The channel region has a layer thickness in the range of 5 nm to 100 nm;
The thin film transistor according to claim 15.

A cavity member;
A diaphragm attached to one side of the cavity member and having a piezoelectric layer formed thereon;
A nozzle plate attached to the other side of the cavity member and formed with nozzle holes;
A piezoelectric inkjet head comprising: an ink chamber defined by the cavity member, the vibration plate, and the nozzle plate;
The piezoelectric layer and / or the cavity member is formed using the method for producing a functional device according to any one of claims 1 to 11 .
Piezoelectric inkjet head.