JP2007178133A - Pressure sensor module, its manufacturing method, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce changes in the vibration characteristics of a diaphragm in a pressure sensor module provided with a semiconductor chip such as a sound pressure sensor chip, while slimming a semiconductor device provided with it. <P>SOLUTION: The pressure sensor module 1 comprises the semiconductor chip 5 and a back chamber container 7 which are arranged side by side on a surface 3a of a board unit 3, wherein the semiconductor chip 5 is provided with a thin-film diaphragm 5a which vibrates in accordance with a fluctuation in pressure. The surface 3a of the board unit 3 and the diaphragm 5a are allowed to face each other to form a first cavity part S1 by the board unit 3 and the semiconductor chip 5. A second cavity part S2 is formed by the board unit 3 and the back chamber container 7. The board unit 3 is formed with a communicating hole 39 for allowing the first cavity part S1 and the second cavity part S2 to communicate with each other. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a pressure sensor module including a semiconductor chip such as a sound pressure sensor chip and a pressure sensor chip, a semiconductor device including the pressure sensor module, and a method for manufacturing the pressure sensor module.

  Conventionally, in a semiconductor device such as a silicon microphone or a pressure sensor, a semiconductor chip having a diaphragm for detecting pressure fluctuations such as sound by vibration is mounted on the surface of a circuit board, such as a sound pressure sensor chip or a pressure sensor chip. (For example, refer to Patent Document 1). In a state where this kind of semiconductor chip is arranged on the surface of the circuit board, a cavity is formed between the diaphragm and the surface of the circuit board.

Here, when the volume of the hollow portion is small, the air spring constant of the hollow portion is increased and the diaphragm is less likely to vibrate. Therefore, the amount of displacement of the diaphragm is reduced and pressure fluctuations cannot be detected accurately. . That is, it is necessary to vibrate the diaphragm to ensure a sufficient size as the cavity. Further, the volume of the cavity needs to be changed as appropriate according to the characteristics of the semiconductor chip.
In the conventional semiconductor device, the volume of the cavity is increased by forming a recess recessed from the surface of the circuit board.
JP 2004-537182 A

However, in the conventional semiconductor device, since the concave portion for securing the volume of the cavity is formed in the circuit board, the thickness dimension of the circuit board becomes large if an attempt is made to secure a sufficiently large volume. Therefore, it is difficult to reduce the thickness of the semiconductor device.
The present invention has been made in view of the above-described circumstances, and provides a semiconductor device capable of suppressing a change in vibration characteristics of a diaphragm while reducing the thickness, a pressure sensor module provided for the semiconductor device, and a manufacturing method thereof. The purpose is that.

In order to solve the above problems, the present invention proposes the following means.
According to a first aspect of the present invention, a semiconductor chip including a thin film diaphragm that vibrates in response to pressure fluctuation and a back chamber container are provided side by side on the surface of the plate unit, and the surface of the plate unit and the diaphragm are provided. A first cavity is formed by the plate unit and the semiconductor chip facing each other, and a second cavity is formed by the plate unit and the back chamber container. A pressure sensor module is proposed in which a communication hole is formed to allow the first cavity and the second cavity to communicate with each other.

  The pressure sensor module constitutes a semiconductor device such as a silicon microphone or a pressure sensor by electrically connecting the semiconductor chip to a drive circuit chip that drives and controls the semiconductor chip. Here, the drive circuit chip is, for example, an amplifier circuit for amplifying an electric signal from the semiconductor chip 5, a DSP (digital signal processor) for processing the electric signal as a digital signal, or an A / D converter. LSI including the like.

According to the pressure sensor module according to the present invention, the first cavity formed between the diaphragm and the plate unit is formed by the back chamber container through the communication hole formed in the plate unit. Since it communicates with the cavity, the volume of the cavity on the back side of the diaphragm is the total volume of the volumes of the first cavity, the second cavity, and the communication hole. For this reason, the volume of the cavity on the back side of the diaphragm can be easily changed only by changing the size of the back chamber container, that is, by changing the volume of the second cavity. Accordingly, the volume of the cavity on the back side of the diaphragm can be easily increased by the back chamber container without increasing the thickness dimension of the plate unit. In addition, the back side of the diaphragm mentioned above indicates the surface side of the diaphragm facing the surface of the plate unit.
Furthermore, since the back chamber container forming the second cavity is arranged on the surface of the plate unit along with the semiconductor chip, the thickness dimension of the back chamber container is set to be equal to or less than the thickness dimension of the semiconductor chip. An increase in the thickness dimension of the sensor module can be suppressed.

  The invention according to claim 2 is the pressure sensor module according to claim 1, wherein the plate unit comprises two plate members and a film layer sandwiched between the two plate members, and the communication hole Are formed in one plate material on which the semiconductor chip and the back chamber container are arranged, and each of the first cavity part and the second cavity part is formed in the film layer. It proposes a pressure sensor module comprising a through-hole communicating with the notch.

The one plate material, the film layer, and the other plate material correspond to, for example, the base substrate 11, the second film layer 69, and the fourth film layer 71, respectively, in a third embodiment described later.
According to the pressure sensor module of the present invention, the slit-shaped notch is formed in the thin film layer, and the first cavity and the second cavity are communicated with one of the plate members. By simply forming the through hole and sandwiching the film layer between the two plates, the communication hole can be easily configured.

  According to a third aspect of the present invention, in the pressure sensor module according to the first or second aspect, the plate member unit communicates the second cavity portion with an outer space located on the outer side of the plate member unit. An outside air communication hole is formed, and the outside air communication hole allows a flow of gas based on a static pressure difference between the second cavity and the outer space, and is a dynamic pressure acting on the diaphragm. A pressure sensor module is proposed which is formed so as to prevent the passage of gas based on fluctuation.

In addition, static pressure has shown the pressure of the two cavity parts and outer space in the state which stopped without gas flowing. The change in static pressure is a relatively small change in pressure per unit time. For example, heating / cooling of two cavities or generation of outgas during reflow for bonding a semiconductor chip to a plate unit. The static pressure change in the two cavities and the static pressure change in the outer space based on the altitude difference are included in the static pressure change.
The pressure fluctuation indicates a dynamic pressure change due to sound or the like, and includes a pressure change per unit time larger than the static pressure change described above. That is, the static pressure change in the two cavities described above and the static pressure change in the outer space are not included in this pressure fluctuation.

  According to the pressure sensor module of the present invention, the flow of gas based on the static pressure difference between the second cavity and the outer space is allowed, and the passage of gas based on the pressure fluctuation acting on the diaphragm is prevented. In addition, by forming the outside air communication hole, even if the above difference occurs, it can be prevented by the diaphragm being deformed due to the difference in the static pressure between the second cavity and the outer space. Therefore, it is possible to reliably prevent the vibration characteristics of the diaphragm from changing.

  The invention according to claim 4 is the pressure sensor module according to any one of claims 1 to 3, wherein the pressure sensor module is arranged on a surface of the plate unit so as to cover the semiconductor chip through a hollow space. A pressure sensor module comprising a lid, wherein the lid is formed with an opening that allows the hollow space to communicate outward, and the back chamber container is formed integrally with the lid. Has proposed.

According to the pressure sensor module according to the present invention, since the semiconductor chip is covered with the lid, the semiconductor chip can be protected. In addition, since the opening that allows the hollow space to communicate with the outside is formed in the lid, the pressure fluctuation generated outside can reach the diaphragm of the semiconductor chip through the opening and the hollow space. .
Furthermore, since the back chamber container is formed integrally with the lid, the second cavity can be formed at the same time as the semiconductor chip is covered by the lid.

  According to a fifth aspect of the present invention, there is provided the pressure sensor module according to any one of the first to fourth aspects, and a drive circuit chip that is electrically connected to the semiconductor chip and controls the semiconductor chip. The semiconductor device characterized by providing is proposed.

The invention according to claim 6 proposes the semiconductor device according to claim 5, wherein the back chamber container is constituted by the drive circuit chip disposed on the surface of the plate unit. is doing.
According to the semiconductor device of the present invention, since the back chamber container is configured by the drive circuit chip, the number of parts arranged on the surface of the plate material unit can be reduced, so that the surface area of the plate material unit is reduced. Can do.

The invention according to claim 7 is a method of manufacturing a pressure sensor module including a semiconductor chip including a thin film diaphragm that vibrates in response to pressure fluctuations, and is a plate material in which two through holes penetrating in the thickness direction are formed. Two layers covering the two through-holes are respectively formed on the front surface and the back surface, and two notch holes individually communicating with the two through-holes are formed in the first layer disposed on the front surface. One notch hole opens the surface of the plate member forming the mounting surface of the semiconductor chip at the periphery of one through hole, and reaches each of the two through holes to a second layer disposed on the back surface. A first laminating step for forming a slit-shaped notch, a third layer formed on the surface of the first layer, the other layer covering the other notch hole and the third layer; A second opening for opening the mounting surface; A layer process, a third stacking process for forming a fourth layer on the back surface of the second layer so as to cover the notch, and the semiconductor chip is inserted into the opening and the one notch hole And a chip placement step of placing the diaphragm on the mounting surface so as to cover the one through hole with the semiconductor chip and to make the diaphragm face the one through hole. Has proposed.
The second layer and the fourth layer correspond to, for example, the second film layer 69 and the fourth film layer 71 in the third embodiment described later. Further, the surface of the plate material described above indicates a surface on which a semiconductor chip is mounted, and the back surface of the plate material indicates the other surface located on the opposite side to the surface of the plate material described above.

According to the method for manufacturing a pressure sensor module according to the present invention, the first cavity is formed between the semiconductor chip and the plate material by arranging the semiconductor chip on the surface of the plate material in the chip arranging step. .
In the second laminating step, the other notch hole is covered by the third layer, so that the first and third layers constituting the other notch hole include the other through hole and the plate material. A back chamber container covering the surface of the container is constructed. That is, the second cavity is formed by the plate material and the back chamber container.
Further, in the third lamination step, the second film layer in which the notch reaching each through hole is sandwiched between the plate material and the fourth film layer. A communication hole that connects the first cavity and the second cavity to each other is formed.

From the above, the volume of the cavity on the back side of the diaphragm is a total volume obtained by adding the volumes of the first cavity, the second cavity, and the communication hole. That is, the volume of the cavity on the back side of the diaphragm can be increased only by changing the size of the second cavity without increasing the thickness of the second film layer disposed on the plate material or the back surface thereof. be able to.
Further, since the back chamber container forming the second cavity is arranged on the surface of the plate along with the semiconductor chip, the pressure sensor can be obtained by setting the thickness dimension of the back chamber container to be equal to or less than the thickness dimension of the semiconductor chip. An increase in the thickness of the module can be suppressed.

According to the first, fifth, and seventh aspects of the invention, the volume of the cavity on the back side of the diaphragm can be easily changed simply by appropriately changing the size of the back chamber container. The strength of the air spring in the cavity on the back side of the diaphragm can be adjusted, and vibrations of the diaphragm can be prevented from being suppressed. Therefore, a semiconductor device including a high-quality pressure sensor module can be provided.
Further, since the back chamber container is arranged on the surface of the plate member unit along with the semiconductor chip, it is possible to easily reduce the thickness of the semiconductor device while suppressing an increase in the thickness dimension of the pressure sensor module.

  According to the second aspect of the present invention, the communication hole is formed simply by forming a slit-shaped notch in the film layer, forming a through hole in one plate, and sandwiching the plate by two plates. Can be easily formed.

According to the third aspect of the invention, the static pressure in the cavity on the back side of the diaphragm and the outer space can be made substantially equal by allowing gas to enter and exit through the outside air communication hole. It is possible to reliably prevent the vibration characteristics of the material from changing.
Furthermore, even if a dynamic pressure difference occurs between the outer space and the cavity on the back side of the diaphragm based on pressure fluctuations such as acoustics, the flow of gas through the outside air communication hole is limited. The diaphragm can be vibrated accurately with respect to the pressure fluctuation.

  According to the invention of claim 4, since the second cavity can be formed at the same time as covering the semiconductor chip with the lid, it is possible to easily manufacture the pressure sensor module for protecting the semiconductor chip. It becomes possible.

  According to the invention of claim 6, since the surface area of the plate unit can be reduced by the drive circuit chip serving as a back chamber container, the semiconductor chip and the semiconductor provided with the drive circuit chip The apparatus can be further reduced in size.

  Further, according to the invention of claim 7, the communication hole and the back chamber container are formed by stacking a plurality of layers on the plate material, forming a notch portion or a notch hole, and the like in the same process. Since the communication hole can be formed, the pressure sensor module can be easily manufactured.

1 to 3 show a first embodiment of the present invention. As shown in FIG. 1, the pressure sensor module 1 according to this embodiment includes a plate material unit 3, a semiconductor chip 5 fixed to the surface 3 a of the plate material unit 3, and a back chamber container 7.
The plate unit 3 includes a substantially plate-like base substrate (one plate member) 11 forming the surface 3a, and two sheet layers 13 and 15 that are formed in a thin film and are sequentially stacked on the back surface 11b of the base substrate 11. It is configured. The base substrate 11 is formed of a resin material such as an epoxy resin that is a general material for electronic components. As shown in FIGS. 1 and 2, the base substrate 11 is formed with two through-holes 17 and 19 having a substantially circular shape in plan view and penetrating in the thickness direction.

The two sheet layers 13 and 15 are formed of a material that can be etched.
As shown in FIGS. 1 and 3, the first sheet layer (film layer) 13 disposed on the back surface 11 b of the base substrate 11 is formed with a notch portion 21 penetrating in the thickness direction. The notch 21 extends along the direction in which the two through-holes 17 and 19 are arranged. The notch 21 has two substantially circular holes 23 and 25 in a plan view, and the two holes 23 and 25 are straight lines. And a slit-like first notch groove 27 and a slit-like second notch groove 29 extending linearly from one hole 25 to the end of the first sheet layer 13.
Here, the two holes 23 and 25 are formed at positions where the two through holes 17 and 19 of the base substrate 11 and the base substrate 11 overlap in the thickness direction, respectively. The first cutout groove 27 is formed wider than the second cutout groove 29.

  The second sheet layer (plate material) 15 disposed on the back surface 13 b of the first sheet layer 13 serves to cover the above-described cutout portion 21 by sandwiching the first sheet layer 13 together with the base substrate 11 from the thickness direction. Plays. Accordingly, the two through holes 17, the cutout portion 21 of the first sheet layer 13, the back surface 11 b of the base substrate 11 and the front surface 15 a of the second sheet layer 15 that are opposed to each other through the cutout portion 21, The communication passage 31 that communicates with each other 19 and the outside air communication hole 33 that communicates one through-hole 19 with the side of the plate unit 3 are configured.

The semiconductor chip 5 is a so-called sound pressure sensor chip that converts sound into an electrical signal. That is, the semiconductor chip 5 includes a diaphragm 5 a that vibrates in response to pressure fluctuations such as sound from an outer space located outside the pressure sensor module 1. The diaphragm 5 a is configured to vibrate in the thickness direction of the semiconductor chip 5.
The semiconductor chip 5 is fixed to the surface 3 a of the plate unit 3 with an adhesive 35 such as silver paste so that the diaphragm 5 a faces the surface 3 a of the plate unit 3 and covers the first through hole 17. That is, the plate unit 3 and the semiconductor chip 5 form the first cavity S1 defined by the diaphragm 5a and the surface 3a of the plate unit 3.
The back chamber container 7 is formed in a substantially bottomed cylindrical shape having an opening, and the opening is brought into contact with the surface 3a of the plate material unit 3 so as to cover the second through hole 19, and a silver paste or the like is used. It is fixed to the surface 3 a of the plate unit 3 by an adhesive 37. That is, the back chamber container 7 is disposed at a position adjacent to the semiconductor chip 3, and the second cavity S 2 is formed by the plate material unit 3 and the back chamber container 7.

The second cavity S2 communicates with the first cavity S1 through two through holes 17 and 19 and a communication path 31 formed in the plate material unit 3. That is, the two through holes 17 and 19 and the communication path 31 of the plate unit 3 constitute a communication hole 39 that allows the first cavity S1 and the second cavity S2 to communicate with each other. The second cavity S2 communicates with the outer space through the outside air communication hole 33 formed in the plate unit 3. That is, the total volume obtained by adding the volumes of the first cavity S1, the communication hole 39, and the second cavity S2 is the volume of the cavity on the back side of the diaphragm 5a.
In the state in which the semiconductor chip 5 and the back chamber container 7 are fixed to the surface 3 a of the plate material unit 3, no gap is generated between the plate material unit 3, the semiconductor chip 5 and the back chamber container 7. That is, the first cavity S1 communicates only with the second cavity S2, and the second cavity S2 communicates with the outer space located on the outer side of the pressure sensor module 1 only by the outside air communication hole 33. It will be.

  When a static pressure difference is generated between the second cavity S2 communicated with the first cavity S1 and the outer space, the outside air communication hole 33 has two cavities S1, S2 based on the static pressure difference. Between the outer space and the outer space. Here, the static pressure in this embodiment indicates the pressure in the two cavities S1 and S2 and the outer space when the gas is stationary without flowing. In addition, as a change in the static pressure, for example, static pressure change in the two cavities S1 and S2 due to heating / cooling of the pressure sensor module 1 and generation of outgas at the time of reflow of the adhesives 16 and 18, The static pressure change in the outer space based on the altitude difference or the like is included in the static pressure change.

Further, the outside air communication hole 33 can be separated from the outer space even if a pressure difference occurs between the pressure in the outer space and the pressure in the two cavities S1 and S2 due to pressure fluctuations such as sound acting on the diaphragm 5a. It is formed in a size that prevents the passage of gas between the two cavities S1, S2.
Here, the pressure fluctuation indicates a dynamic pressure change due to sound or the like, and includes a pressure change per unit time larger than the static pressure change described above. That is, the static pressure change of the two cavities S1 and S2 and the static pressure change of the outer space are not included in the pressure fluctuation.

  The pressure sensor module 1 configured as described above can connect a semiconductor device such as a silicon microphone or a pressure sensor by electrically connecting the semiconductor chip 5 to a drive circuit chip (not shown) that drives and controls the semiconductor chip 5. It constitutes. Here, the drive circuit chip is, for example, an amplifier circuit for amplifying an electric signal from the semiconductor chip 5, a DSP (digital signal processor) for processing the electric signal as a digital signal, or an A / D converter. LSI including the like.

Next, a method for manufacturing the pressure sensor module 1 configured as described above will be described.
When the pressure sensor module 1 is manufactured, first, the plate member unit 3 having a laminated structure is manufactured (plate member manufacturing process).
In this plate material manufacturing process, first, a substantially plate-like base substrate 11 is formed from a resin material, and through holes 17 and 19 are formed at positions adjacent to each other by drilling or punching (plate material forming process). Next, a thin film-like first sheet layer 13 made of a material that can be etched is formed on the back surface 11b of the base substrate 11 (first thin film forming step). Thereafter, a resist layer (not shown) is formed on the back surface 13b of the first sheet layer 13 excluding the portion where the notch 21 is formed, and the notch 21 is formed by etching (etching process).

In this etching process, the notch 21 is formed in a groove shape that reaches the back surface 11 b of the base substrate 11. After the etching process is completed, the resist layer is removed. In addition, when the first sheet layer 13 is formed from a material that can be etched such as a dry film, at least the dry film itself becomes a resist material, so a thin film forming step (laminating step), an exposure step The notch 21 can be formed through the development process.
And the 2nd sheet layer 15 is formed in the back surface 13b of the 1st sheet layer 13 so that the said notch part 21 may be covered (2nd thin film formation process). Similarly to the first sheet layer 13, the second sheet layer 15 is also formed of a material that can be etched. The plate material manufacturing process ends.

  In this plate material manufacturing process, the manufacturing method in the case of forming one plate material unit 3 has been described. However, the present invention is not limited to this. For example, the base substrate 11 is formed from one large plate-shaped member, and this plate The first sheet layer 13 and the second sheet layer 15 may be laminated on the shaped member, or the notch portion 21 may be formed, and then the individual plate member units 3 may be cut by dicing. In this case, since a large number of notches 21 can be formed at a time by a single etching process, it is possible to improve the manufacturing efficiency of the plate unit 3.

  After completion of this plate material manufacturing process, the semiconductor chip 5 and the back chamber container 7 are fixed to the surface 3a of the plate material unit 3 using the adhesives 35 and 37 (placement step). At this time, the semiconductor chip 5 and the back chamber container 7 are covered with the surface 3 a of the plate unit 3 so that the semiconductor chip 5 and the back chamber container 7 each include two through holes. The gap between the surface 3a of the plate unit 3 and the semiconductor chip 5 and the back chamber container 7 can be filled with the adhesives 35 and 37.

According to the pressure sensor module 1 described above, the volume of the cavity on the back side of the diaphragm 5a is a total volume obtained by adding the volumes of the first cavity S1, the second cavity S2, and the communication hole 39. Therefore, it can be easily changed only by changing the size of the back chamber container 7, that is, only changing the volume of the second cavity S2. Therefore, without increasing the thickness dimension of the plate unit 3, the back chamber container 7 can easily increase the volume of the cavity on the back side of the diaphragm 5a.
From the above, it is possible to adjust the strength of the air spring in the cavity on the back side of the diaphragm 5a so as not to suppress the vibration of the diaphragm 5a, and to provide a semiconductor device including the high-quality pressure sensor module 1. Can be provided.
In addition, since the back chamber container 7 is disposed on the surface 3a of the plate unit 3 adjacent to the semiconductor chip 5, an increase in the thickness dimension of the pressure sensor module 1 can be suppressed and the semiconductor device can be easily thinned. Is possible.

Further, the two cavities S1, S2 and the outer cavities are changed by the pressure change of the two cavities S1, S2 based on heating and cooling of the pressure sensor module 1 and the static pressure change in the outer space based on the altitude difference. When a difference in static pressure occurs between the space and the gas, the gas enters and exits between the second cavity S2 and the outer space via the outside air communication hole 33. The static pressure of is substantially equal to the static pressure of the outer space. Therefore, since the diaphragm 5a can be prevented from being deformed due to the difference in static pressure between the two cavities S1, S2 and the outer space, it is possible to reliably prevent the vibration characteristics of the diaphragm 5a from changing. .
Further, even when a pressure fluctuation such as sound reaches the diaphragm 5a and a dynamic pressure difference is generated between the two cavities S1 and S2 and the outer space based on this, the outside air communication hole 33 is interposed. Therefore, the diaphragm 5a can be vibrated with high accuracy against the pressure fluctuation.

  In addition, the slit-shaped notch 21 is formed in the first sheet layer 13 and the two through-holes communicating the notch 21 with each of the first cavity S1 and the second cavity S2 in the base substrate 11 The communication holes 39 and the outside air communication holes 33 can be easily configured simply by forming the first and second sheet layers 13 and 19 and sandwiching the first sheet layer 13 between the base substrate 11 and the second sheet layer 15. In particular, since the cutout 21 is formed by etching, the communication hole 39 and the outside air communication hole 33 with high dimensional accuracy can be easily formed.

  In the first embodiment described above, the plate unit 3 is formed from a material that can be etched on the back surface 13b of the first sheet layer 13 while the front surface 3a side is formed by the base substrate 11 made of a resin material. However, the present invention is not limited to this, and the first sheet layer 13 in which at least the notch 21 is formed is sandwiched between two plate materials, and one of the plate materials is provided. What is necessary is just to comprise and form the through-holes 17 and 19 similar to the said embodiment.

  That is, for example, the front surface 3a side of the plate material unit 3 is formed by a sheet layer made of a material that can be etched, and a base substrate made of a resin material is provided on the back surface 13b of the first sheet layer 13, so that the plate material unit 3 May be configured. In the case of this configuration, the two through holes 17 and 19 may be formed in the sheet layer constituting the surface 3a. The plate material unit 3 having this configuration is formed by sequentially laminating the first sheet layer 13 and the sheet layer on the surface of the base substrate, and by forming through holes 17 and 19 in the sheet layer by etching. Can be manufactured.

  Next, a second embodiment according to the present invention will be described with reference to FIG. The pressure sensor module according to the second embodiment differs from the pressure sensor module 1 according to the first embodiment only in the configuration of the plate material unit. Here, only the structure of the plate unit will be described, and the same components as those of the pressure sensor module 1 of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 4, the plate unit 43 of the pressure sensor module 41 according to this embodiment is mounted with various electronic components such as a drive circuit chip (not shown) in addition to the base substrate 11 and the first sheet layer 13. An adhesive sheet (plate material) 47 formed on the surface 45a of the mounting substrate 45 is provided. The adhesive sheet 47 is disposed on the back surface 13b of the first sheet layer 13 in which the cutout portion 21 is formed.
Therefore, the cutout portion 21, the back surface 11 b of the base substrate 11 and the front surface 47 a of the adhesive sheet 47 that face each other through the cutout portion 21, a communication passage 49 that connects the two through holes 17, 19 to each other, And the external air communication hole 51 which connects one through-hole 19 to the side of the board | plate material unit 43 is comprised. The communication passage 49 and the two through holes 17 and 19 constitute a communication hole 53 that allows the first cavity S1 and the second cavity S2 to communicate with each other.

When manufacturing the pressure sensor module 41 having this configuration, the same plate material forming process, first thin film forming process and etching process as in the first embodiment are performed. Next, the semiconductor chip 5 and the back chamber container 7 are fixed to the surface 3a of the plate material unit 43 using the adhesives 35 and 37 (arrangement step). In addition, the adhesive sheet 47 is attached to the surface 45a of the mounting substrate 45 before, after, or at the same time as the above process. Finally, by sticking the first sheet layer 13 to the surface 47a of the adhesive sheet 47, the manufacture of the pressure sensor module 41 is completed.
This pressure sensor module 41 has the same effect as the pressure sensor module 1 of the first embodiment.
In the second embodiment described above, the adhesive sheet 47 constituting the plate unit 43 is arranged on the surface 45a of the mounting board 45, but the present invention is not limited to this, and at least various materials such as a resin material. What is necessary is just to be distribute | arranged to the flat surface of the member which consists of.

  Next, a third embodiment according to the present invention will be described with reference to FIGS. The pressure sensor module according to the second embodiment differs from the pressure sensor module 1 according to the first embodiment only in the configuration of the back chamber container and the manufacturing method of the pressure sensor module. Here, the structure of the back chamber container and the manufacturing method of the pressure sensor module will be mainly described. The same components as those of the pressure sensor module 1 of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted. .

As shown in FIG. 5, the back chamber container 63 of the pressure sensor module 61 according to this embodiment includes two film layers 65 and 67 that are sequentially laminated on the surface 3 a of the plate unit 3. These two film layers 65 and 67 are made of a material that can be etched, and cover the entire surface 3a of the plate unit 3 excluding the portion where the semiconductor chip 5 is disposed.
The two film layers 69 and 71 sequentially laminated on the back surface 11b of the base substrate 11 are the same as the two sheet layers 13 and 15 of the first embodiment, and are formed from a material that can be etched. ing. That is, the plate material unit 3 in the present embodiment includes the base substrate 11 and the two film layers 69 and 71.

When manufacturing the pressure sensor module 61, first, the same plate material forming process as that of the first embodiment is performed. Next, as shown in FIG. 6, the first film layer 65 is formed on the front surface 3 a of the base substrate 11, and the second film layer 69 is formed on the back surface 11 b of the base substrate 11. The two through holes 17 and 19 are covered with the 65 and the second film layer 69 (first laminating step).
In the first laminating step, the two cutout holes 73 and 75 penetrating the first film layer 65 in the thickness direction and individually communicating with the two through holes 17 and 19 of the base substrate 11. And the notch 21 is formed in the second film layer 69 (notch forming step). In this notch forming step, a resist layer (not shown) is formed on the surface 65a of the first film layer 65 excluding the portions where the two notch holes 73 and 75 are formed, and each notch hole 73 and 75 is etched. Form. At this time, the one notch hole 73 is formed larger than the first through hole (one through hole) 17 communicating with the semiconductor chip 5 in order to secure the mounting surface of the semiconductor chip 5. That is, the surface 11 a of the base substrate 11 serving as a mounting surface located at the periphery of the first through-hole 17 is exposed (opened) outward through the one cutout hole 73.

Further, in this notch forming step, a resist layer (not shown) is formed on the back surface 69b of the second film layer 69 excluding the portion where the notch 21 is formed, as in the case of the notches 73 and 75. The notch 21 is formed by etching. After the etching process is completed, the resist layer is removed.
After the completion of the first lamination step described above, the third film layer 67 is formed on the surface 65a of the first film layer 65 so as to cover the two cutout holes 73 and 75 of the first film layer 65. (Second lamination step). In the second laminating step, the other notch hole 75 formed in the first film layer 65, and the base substrate 11 and the third film layer 67 facing each other through the notch hole 75, A second cavity S <b> 2 that covers the surface 3 a of the base substrate 11 including the second through hole (the other through hole) 19 is formed. That is, the back film chamber 63 constituting the second cavity S2 is constituted by the two film layers 65 and 67 laminated on the surface 3a of the base substrate 11.

In the second laminating step, an opening 77 is formed in the third film layer 67 so as to penetrate in the thickness direction and open one notch hole 73 toward the third film layer 67 ( Opening forming step). At this time, the opening 77 is formed in a size substantially equal to that of the one notch hole 73. In this opening forming step, a resist layer (not shown) is formed on the surface 67a of the third film layer 67 excluding the portion where the opening 77 is formed in the same manner as the above-described notch forming step, and etching is performed. An opening 77 is formed. After the etching process is completed, the resist layer is removed.
When the first film layer 65, the second film layer 69, and the third film layer 67 are formed of a material that can be etched such as a dry film, at least the dry film itself is a resist material. Therefore, in the above-described notch forming process and opening forming process, the notch holes 73 and 75, the notch 21 and the opening 77 are formed through the thin film forming process (laminating process), the exposure process, and the developing process. can do.

After the end of the second laminating step described above, a fourth film layer (plate material) 71 is formed on the back surface 69b of the second film layer 69 so as to cover the notch 21 of the second film layer 69 ( (3rd lamination process). Thus, the plate material unit 3 including the base substrate 11 and the two film layers 69 and 71 is configured, and the communication hole 39 and the outside air communication hole 33 of the plate material unit 3 are configured.
In addition, although this 3rd lamination process may be performed simultaneously with a 2nd lamination process, it is more preferable to carry out after a 2nd lamination process. That is, by performing the above steps in this order, it is possible to easily prevent dust from entering the second cavity S2.

  Finally, as shown in FIG. 5, the semiconductor chip 5 is fixed to the surface 3 a of the base substrate 11 using the adhesive 35 (chip placement process), whereby the manufacture of the pressure sensor module 61 is completed. In this chip placement step, the semiconductor chip 5 is inserted into the opening 77 and one notch hole 73 formed in the second film layer 69 and the first film layer 65, respectively. The semiconductor chip 5 can be easily positioned. In this step, the first cavity S <b> 1 is formed by the semiconductor chip 5 and the base substrate 11.

  The pressure sensor module 61 has the same effect as the pressure sensor module 1 of the first embodiment. Further, according to the manufacturing method of the pressure sensor module 61, the communication hole 33 and the back chamber 63 are formed by laminating the plurality of film layers 65, 67, 67, 71 on the base substrate 11, and the notch 21 or the notch hole. Since the second cavity S2, the communication hole 39, and the outside air communication hole 33 can be formed by a similar process such as forming 73 by etching, the pressure sensor module 61 can be easily manufactured.

  In the first embodiment and the third embodiment described above, the cutout portions 21 of the first sheet layer 13 and the second film layer 69 are formed by etching. However, the present invention is not limited to this. For example, it may be formed by screen printing, that is, it may be formed at the same time when the first sheet layer 13 or the second film layer 69 is laminated on the back surface 11 b of the base substrate 11. However, in the case of this configuration, it is necessary to form the first sheet layer 13 and the second film layer 69 with a material capable of screen printing.

  Next, a fourth embodiment according to the present invention will be described with reference to FIG. The semiconductor device according to the fourth embodiment is obtained by replacing the back chamber container of the pressure sensor module 1 of the first embodiment with a drive circuit chip. Therefore, the components of the semiconductor device excluding the back chamber container are given the same reference numerals as those of the pressure sensor module 1 of the first embodiment, and the description thereof is omitted.

As shown in FIG. 7, the semiconductor device 81 according to this embodiment includes a plate unit 3, a semiconductor chip 5 disposed on the surface 3 a of the plate unit 3, and a drive circuit chip (back chamber container) 83. The semiconductor chip 5 and the drive circuit chip 83 are electrically connected by a wire 85.
The drive circuit chip 83 is the same as that described in the first embodiment, and is mainly formed of silicon. The drive circuit chip 83 is formed in a substantially bottomed cylindrical shape having an opening, and the opening is brought into contact with the surface 3a of the plate material unit 3 so as to cover the second through hole 19 and silver paste or the like. The adhesive 87 is fixed to the surface 3a of the plate unit 3. As a result, the drive circuit chip 83 forms the second cavity S <b> 2 together with the plate material unit 3. That is, the drive circuit chip 83 serves as the back chamber container 7 of the first embodiment.

When manufacturing the semiconductor device 81 having the above configuration, first, a plate material manufacturing process similar to that of the first embodiment is performed to form the plate material unit 3. Next, the semiconductor chip 5 and the drive circuit chip 83 are fixed to the surface 3a of the plate material unit 3 using the adhesives 35 and 87 (arrangement step). Finally, the semiconductor chip 81 and the drive circuit chip 83 are electrically connected by the wire 85 by wire bonding (connection process), whereby the manufacture of the semiconductor device 81 is completed.
This semiconductor device 81 has the same effect as the pressure sensor module 1 of the first embodiment. Further, according to the semiconductor device 81, by configuring the drive circuit chip 83 as a back chamber container, the number of parts arranged on the surface 3a of the plate unit 3 can be reduced. The area can be reduced. Therefore, the semiconductor device 81 including the semiconductor chip 5 and the drive circuit chip 83 can be downsized.

  Note that the pressure sensor module 61 and the semiconductor device 81 described in the third embodiment and the fourth embodiment described above can be mounted on the same mounting substrate 45 or the like as in the second embodiment. The fourth film layer 71 and the second sheet layer 15 constituting the plate material unit 3 may be replaced with the same adhesive sheet 47 as in the second embodiment.

  Next, a fifth embodiment according to the present invention will be described with reference to FIG. Note that the semiconductor device according to the fifth embodiment includes the pressure sensor module 1 of the first embodiment. Accordingly, components of the pressure sensor module included in the semiconductor device are denoted by the same reference numerals as those of the pressure sensor module 1 of the first embodiment, and description thereof is omitted.

  As shown in FIG. 8, the semiconductor device 91 according to this embodiment includes a substrate 93, a pressure sensor module 1 disposed on the surface 93 a of the substrate 93, a drive circuit chip 97, and a lid 99. The pressure sensor module 1 and the drive circuit chip 97 are bonded and fixed to the surface 93 a of the substrate 93 via the adhesive sheet 95 and are electrically connected to each other by the wire 101. The drive circuit chip 97 is the same as that described in the first embodiment.

  The lid 99 has a substantially plate-like upper end wall portion 103 disposed at a position spaced from the surface 93a of the substrate 93 in the thickness direction, and a substantially annular side wall portion 105 fixed to the periphery of the surface 93a of the substrate 93. It has. That is, the lid 99 is configured to cover the pressure sensor module 1 and the drive circuit chip 97 via the hollow space (outer space) S3. The hollow space S3 communicates with an outer space located outside the semiconductor device 91 through an opening 103a formed in the upper end wall 103.

When manufacturing the semiconductor device 91, the pressure sensor module 1 and the drive circuit chip 97 are fixed to the surface 93 a of the substrate 93 via the adhesive sheet 95, and then the lid 99 is fixed to the surface 93 a of the substrate 93. do it.
This semiconductor device 91 has the same effect as the pressure sensor module 1 of the first embodiment. Further, according to the semiconductor device 91, since the semiconductor chip 5 and the drive circuit chip 97 are covered with the lid 99, the semiconductor chip 5 and the drive circuit chip 97 can be protected.
In addition, since the opening 99a is formed in the lid 99, the pressure fluctuation generated outside the semiconductor device 91 reaches the diaphragm 5a of the semiconductor chip 5 through the opening 103a and the hollow space S3. be able to.

In the fifth embodiment described above, the pressure sensor module 1 of the first embodiment is provided. However, for example, a pressure sensor module similar to that of the second embodiment may be provided.
That is, the second sheet layer 15 constituting the plate unit 3 may be removed and the first sheet layer 13 may be directly bonded to the adhesive sheet 95 disposed on the surface 93a of the substrate 93. In this configuration, a plate unit is constituted by the adhesive sheet 95 to which the base substrate 11, the first sheet layer 13, and the drive circuit chip 97 are bonded.
In the case of this configuration, since the second sheet layer 15 is not necessary, the semiconductor device 91 can be thinned. In addition, since a part of the manufacturing process of the pressure sensor module can be omitted, the manufacturing efficiency of the semiconductor device can be improved.

  Next, a sixth embodiment of the present invention will be described with reference to FIG. The semiconductor device according to the sixth embodiment differs from the semiconductor device 91 according to the fifth embodiment only in the configuration of the plate material unit. Here, only the structure of the plate unit will be described, and the same components as those of the semiconductor device 91 of the fifth embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 9, the semiconductor device 111 according to this embodiment includes a plate unit 113, a semiconductor chip 5 fixed to the surface 113 a of the plate unit 113, a back chamber container 7, a drive circuit chip 97, and a lid 99. It has.
The plate material unit 113 includes a substantially plate-like base substrate (one plate material) 115 that forms the surface 113a, and two sheet layers 117 and 119 that are formed in a thin film shape and are sequentially stacked on the back surface 115b of the base substrate 115. It is configured. The base substrate 115 and the two sheet layers 117 and 119 are formed of the same material as the base substrate 11 and the two sheet layers 13 and 15 of the first embodiment.

  Similarly to the base substrate 11 of the first embodiment, the base substrate 115 penetrates in the thickness direction, and is covered with the semiconductor chip 5 and the back chamber container 7, respectively, and the first cavity S1 and the first cavity S1. Two through holes 121 and 123 communicating with the two hollow portions S2 are formed. Further, the first sheet layer (film layer) 117 also has two holes 125 and 127, a first notch groove 129, and a second notch, as in the first sheet layer 13 of the first embodiment. A notch 133 including the groove 131 is formed. The second sheet layer (plate material) 119 also has the above-described notch portion sandwiching the first sheet layer 117 from the thickness direction together with the base substrate 115 in the same manner as the second sheet layer 15 of the first embodiment. It plays the role of covering 133.

Therefore, the through-holes 121 and 123 are communicated with each other by the notch 133, the back surface 115b of the base substrate 115 and the surface 119a of the second sheet layer 119 that are opposed to each other via the notch 133. The outside air communication hole 137 that connects the passage 135 and one through hole 123 to the side of the plate unit 113 is formed. Further, the two through holes 121 and 123 and the communication path 135 form a communication hole 139 that allows the first cavity S1 and the second cavity S2 to communicate with each other.
From the above, the pressure sensor module 141 is configured by the plate material unit 113, the semiconductor chip 5, and the back chamber container 7.

When manufacturing the semiconductor device 111 configured as described above, after manufacturing the pressure sensor module 141 in the same manner as in the first embodiment, the plate unit 113 using an adhesive 143 such as silver paste is used. The drive circuit chip 97 is fixed to the surface 113a of the substrate. The drive circuit chip 97 may be bonded simultaneously with the bonding of the semiconductor chip 5 and the back chamber container 7. Finally, the lid 99 is fixed to the surface 113a of the plate unit 113, whereby the manufacture of the semiconductor device 111 is completed.
The lid 99 includes the semiconductor chip 5, the back chamber container 7, and the drive circuit chip 97, and forms a hollow space S4 that communicates with the outer space through the opening 103a. However, since the lid 99 is disposed on the surface 113a of the plate unit 113, the outside air communication hole 137 communicates directly with the outer space, not with the hollow space S4.

The semiconductor device 111 has the same effect as the semiconductor device 91 of the fifth embodiment. Further, according to the semiconductor device 111, since the lid 99 is directly fixed to the surface 113a of the plate material unit 113, the lid 99 of the fifth embodiment is not necessary, and the semiconductor device 111 is thinned. Can be further planned.
In the semiconductor devices 91 and 111 described in the fifth embodiment and the sixth embodiment described above, a plurality of stacked film layers 65 are provided as in the third embodiment and the fourth embodiment. , 67 and the drive circuit chip 83 can constitute the back chamber container 7.

  Next, a seventh embodiment according to the present invention will be described with reference to FIG. The semiconductor device according to the seventh embodiment differs from the semiconductor device 111 of the sixth embodiment only in the configuration of the back chamber container and the lid. Here, only the structure of the back chamber container and the lid will be described, and the same components as those of the semiconductor device 111 of the sixth embodiment are denoted by the same reference numerals, and the description thereof is omitted.

As shown in FIG. 10, the semiconductor device 151 according to this embodiment is configured by fixing the semiconductor chip 5, the drive circuit chip 97, and the lid 153 to the surface 113 a of the plate material unit 113.
The lid body 153 includes a partition wall portion 157 for constituting the back chamber container 155 in addition to the upper end wall portion 103 and the side wall portion 105 similar to the lid body 99 of the above embodiment. The partition wall 157 is formed to extend integrally from the inner surface 103 b of the upper end wall 103 toward the surface 113 a of the plate unit 113. In a state where the lid body 153 having this configuration is fixed to the plate material unit 113, the tip of the partition wall portion 157 abuts on the surface 113 a of the plate material unit 113 positioned between the two through holes 121 and 123.

Then, the first hollow space S5 is formed by the upper end wall portion 103 including the opening 103a, a part of the side wall portion 105, the partition wall portion 157, and the plate material unit 113. The first hollow space S5 includes the semiconductor chip 5 and the drive circuit chip 97, and communicates outward through the opening 103a.
Further, a second hollow space (second cavity portion) S6 is formed by the upper end wall portion 103 not including the opening 103a, a part of the side wall portion 105, the partition wall portion 157, and the plate material unit 113. The second hollow space S6 communicates with the second through hole 123. That is, the constituent elements of the lid body 153 forming the second hollow space S6 constitute a back chamber container 155.
Therefore, the back chamber container 155 formed integrally with the lid 153 constitutes the pressure sensor module 159 together with the plate material unit 113 and the semiconductor chip 5.

When manufacturing this semiconductor device 151, after manufacturing the plate unit 113 in the same manner as in the sixth embodiment, the semiconductor chip 5 is applied to the surface 113a of the plate unit 113 using adhesives 35, 143 such as silver paste. And the drive circuit chip 97 is fixed. Finally, the lid 153 is fixed to the surface 113a of the plate material unit 113, whereby the manufacture of the semiconductor device 151 is completed.
The semiconductor device 151 has the same effect as the semiconductor device 111 of the sixth embodiment. Further, according to the semiconductor device 151, the second hollow space S6 can be formed at the same time as the semiconductor chip 5 and the drive circuit chip 97 are covered by the lid 153. Therefore, the semiconductor device 151 that protects the semiconductor chip 5 can be easily manufactured.

  In the seventh embodiment described above, the drive circuit chip 97 is disposed on the surface 113a of the plate material unit 113. However, the present invention is not limited to this, and at least the semiconductor chip 5 and the lid 153 are disposed. It only has to be.

Further, in all the embodiments described above, the two through holes 17 and 19 (121 and 123) of the base substrate 11 (115) are formed in a substantially circular shape in plan view. However, it is only necessary to form the semiconductor chip 5 and the back chamber containers 7, 63, 155 and the drive circuit chip 83 so as to be covered with each other. That is, these through holes 17, 19 (121, 123) may be formed in a polygonal shape in a plan view, or may be formed in an elliptical shape, for example.
Furthermore, although the two notch grooves 27 and 29 (121 and 123) formed in the first sheet layer 13 (117) and the second film layer 69 are formed in a straight line, the present invention is not limited thereto. However, it may be formed by meandering.

Further, the cutout portion 21 (113) of the first sheet layer 13 (117) and the second film layer 69 has two holes 23, 25 (125, 125) that overlap the two through holes 17, 19 (121, 123). 127). However, the present invention is not limited to this, and the first cutout groove 27 that reaches at least both of the two through holes 17, 19 (121, 123) of the base substrate 11 (115). (129) and the second notch groove 29 (131) extending from the second through hole 19 (123) to the end of the first sheet layer 13 (117). That is, the second notch groove 29 (131) only needs to reach at least the second cavity S2 and the second through hole 19 (123), and the first notch groove 27 (129) It is not necessary to communicate directly.
The second notch 29 (131) constituting the outside air communication hole 33 (137) extends from one hole 25 (127) to the end of the first sheet layer 13 (117) or the second film layer 69. For example, the first sheet layer 13 (117) and the second film layer 69 can be formed from the other hole 23 (125) and the first notch groove 27 (129). It may be formed so as to extend to the end.

Further, the plate unit 3, 43, 113 is configured by laminating a plurality of plate-like members such as sequentially laminating the base substrate 11, the first sheet layer 13, and the second sheet layer 15. This is not restrictive, and at least the communication holes 39, 53, 139 and the outside air communication holes 33, 51, 137 may be formed, that is, they may be formed from one member.
In addition, although only one outside air communication hole 33, 51, 137 is formed in the plate material units 3, 43, 113, the present invention is not limited to this. For example, two or more may be formed. .

Furthermore, when the volume of the cavity on the back side of the diaphragm 5a can be made sufficiently large, that is, when the second cavity S2 can be enlarged, the outside air communication holes 33 and 137 may not be formed in the plate unit 3. .
Further, the semiconductor chip 5 is composed of the sound pressure sensor chip including the diaphragm 5a. However, the present invention is not limited to this, and it is sufficient that the semiconductor chip 5 has at least a movable part such as the diaphragm 5a constituting the semiconductor chip 5. Therefore, the semiconductor chip may be, for example, a pressure sensor chip that measures the pressure or pressure change in the outer space of the semiconductor device 1.

  As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.

It is a sectional side view which shows the pressure sensor module which concerns on 1st Embodiment of this invention. FIG. 2 is a plan view showing a base substrate in the pressure sensor module of FIG. 1. FIG. 2 is a plan view showing a first sheet layer in the pressure sensor module of FIG. 1. It is a sectional side view which shows the pressure sensor module which concerns on 2nd Embodiment of this invention. It is a sectional side view which shows the pressure sensor module which concerns on 3rd Embodiment of this invention. It is a schematic diagram which shows the manufacturing method of the pressure sensor module shown in FIG. It is a sectional side view which shows the semiconductor device which concerns on 4th Embodiment of this invention. It is a sectional side view which shows the semiconductor device which concerns on 5th Embodiment of this invention. It is a sectional side view which shows the semiconductor device which concerns on 6th Embodiment of this invention. It is a sectional side view which shows the semiconductor device which concerns on 7th Embodiment of this invention.

Explanation of symbols

1, 41, 61, 141, 159 ... pressure sensor module, 3, 43, 113 ... plate material unit, 3a, 113a ... surface, 5 ... semiconductor chip, 5a ... diaphragm, 7, 63, 155 ... back chamber container, 9 ... semiconductor chip, 11, 115 ... base substrate (one plate), 11b ... back surface, 13, 117 ... first sheet layer (film) Layer), 15, 119 ... second sheet layer (plate material), 17, 19, 121, 123 ... through hole, 21, 133 ... notch, 23, 25 ... hole, 33, 51, 137 ... outside air communication holes, 39, 53, 139 ... communication holes, 47, 95 ... adhesive sheets (plate materials), 65 ... first film layer, 65a ... surface, 67 ... third film layer, 69 ... second film layer, 9b ... back surface, 71 ... fourth film layer (plate material), 73 ... one notch hole, 75 ... other notch hole, 77 ... opening, 81, 91, 111. ..Semiconductor device, 83... Drive circuit chip (back chamber container), 97... Drive circuit chip, 103 a... Opening, 153... Lid, S 1. S2 ... second cavity, S3 ... hollow space (outer space), S5 ... first hollow space, S6 ... second hollow space (second cavity)

Claims (7)

On the surface of the plate unit, a semiconductor chip provided with a thin film diaphragm that vibrates in response to pressure fluctuations and a back chamber container are provided side by side, and the plate unit is disposed so that the surface of the plate unit and the diaphragm face each other. And forming the first cavity with the semiconductor chip, and forming the second cavity with the plate unit and the back chamber container,
The pressure sensor module, wherein the plate member unit is formed with a communication hole that allows the first cavity and the second cavity to communicate with each other. The plate unit comprises two plate members and a film layer sandwiched between the two plate members;
The communication hole is formed in a slit-shaped notch formed in the film layer, and one plate material for arranging the semiconductor chip and the back chamber container, and the first cavity and the second cavity. The pressure sensor module according to claim 1, wherein each of the pressure sensor module and a through hole that communicates the notch with each other. The plate member unit is formed with an outside air communication hole for communicating the second cavity portion with an outer space located on the outer side of the plate member unit,
The outside air communication hole allows a gas flow based on a static pressure difference between the second cavity and the outer space, and prevents a gas from passing based on a dynamic pressure fluctuation acting on the diaphragm. The pressure sensor module according to claim 1, wherein the pressure sensor module is configured to be configured as described above. A lid disposed on the surface of the plate unit so as to cover the semiconductor chip through a hollow space;
An opening for communicating the hollow space outward is formed in the lid,
The pressure sensor module according to any one of claims 1 to 3, wherein the back chamber container is formed integrally with the lid.   5. A semiconductor device comprising: the pressure sensor module according to claim 1; and a drive circuit chip that is electrically connected to the semiconductor chip and controls driving of the semiconductor chip. .   The semiconductor device according to claim 5, wherein the back chamber container is configured by the drive circuit chip disposed on a surface of the plate unit. A method of manufacturing a pressure sensor module comprising a semiconductor chip comprising a thin film diaphragm that vibrates in response to pressure fluctuations,
Two layers covering the two through holes are respectively formed on the front and back surfaces of the plate material in which two through holes penetrating in the thickness direction are formed, and the two through holes are formed in the first layer disposed on the front surface. Two notch holes communicating individually with the holes are formed, and one of the notch holes opens the surface of the plate member forming the mounting surface of the semiconductor chip at the periphery of one through hole, and the second is disposed on the back surface. A first laminating step of forming slit-shaped notches reaching each of the two through-holes in the layer,
A second layer that forms a third layer on the surface of the first layer, covers the other notch hole with the third layer, and forms an opening in the third layer that opens the mounting surface; Process,
A third stacking step of forming a fourth layer on the back surface of the second layer so as to cover the notch,
The semiconductor chip is inserted into the opening and the one notch hole and disposed on the mounting surface, and the semiconductor chip covers the one through hole and makes the diaphragm face the one through hole. A method for manufacturing the pressure sensor module.

Images