JP2007165860A5 - - Google Patents
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- JP2007165860A5 JP2007165860A5 JP2006298961A JP2006298961A JP2007165860A5 JP 2007165860 A5 JP2007165860 A5 JP 2007165860A5 JP 2006298961 A JP2006298961 A JP 2006298961A JP 2006298961 A JP2006298961 A JP 2006298961A JP 2007165860 A5 JP2007165860 A5 JP 2007165860A5
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- JP
- Japan
- Prior art keywords
- barrier film
- film
- resist
- conductive
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010408 film Substances 0.000 claims 40
- 230000004888 barrier function Effects 0.000 claims 29
- 239000004020 conductor Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 4
- 229910052737 gold Inorganic materials 0.000 claims 4
- 239000010931 gold Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910052709 silver Inorganic materials 0.000 claims 4
- 239000004332 silver Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
Claims (9)
前記第１のバリア膜上に選択的にレジストを形成し、
前記第１のバリア膜上と前記レジスト上とで、銅、銀、アルミニウムまたは金のうち少なくともいずれか一を含む導電膜が分離されるように前記導電膜を形成し、
前記レジストを除去することで前記レジスト上に形成された前記導電膜を除去し、
前記第１のバリア膜上に形成された前記導電膜を覆うように第２の導電材料からなる第２のバリア膜を形成し、
前記第１のバリア膜及び前記第２のバリア膜を選択的にエッチングし、複数の配線及び電極を形成することを特徴とする表示装置の作製方法。 Forming a first barrier film made of a first conductive material ;
Selectively forming a resist on the first barrier film ;
Forming the conductive film so that the conductive film containing at least one of copper, silver, aluminum, or gold is separated between the first barrier film and the resist;
The conductive film formed on the resist is removed by removing the resist,
Forming a second barrier film of the second conductive material so as to cover the Kishirube conductive film before formed on the first barrier film,
A method for manufacturing a display device, wherein the first barrier film and the second barrier film are selectively etched to form a plurality of wirings and electrodes.
前記第１のバリア膜、または、前記第２のバリア膜は、タングステン、モリブデン、クロム、チタン、タンタル、あるいはそれらの合金、あるいはそれらの窒化物のいずれか一であることを特徴とする表示装置の作製方法。The display device, wherein the first barrier film or the second barrier film is any one of tungsten, molybdenum, chromium, titanium, tantalum, alloys thereof, or nitrides thereof. Manufacturing method.
前記レジストの端部が、逆テーパー形状となるように前記レジストを形成することを特徴とする表示装置の作製方法。 In claim 1 or 2 ,
A method for manufacturing a display device, wherein the resist is formed so that an end portion of the resist has an inversely tapered shape.
前記レジストの端部が、概略垂直、あるいは７５°以上９０°未満のテーパー角を有するテーパー形状となるように前記レジストを形成することを特徴とする表示装置の作製方法。 In claim 1 or 2 ,
A method for manufacturing a display device, wherein the resist is formed so that an end portion of the resist has a substantially vertical shape or a tapered shape having a taper angle of 75 ° to less than 90 °.
前記レジストの膜厚は前記導電膜の膜厚よりも厚く形成することを特徴とする表示装置の作製方法。The method for manufacturing a display device is characterized in that the resist is formed thicker than the conductive film.
前記ゲート配線は、第１の部分及び第２の部分を有し、The gate wiring has a first portion and a second portion,
前記第１の部分は、The first part is
第１の導電材料からなる第１のバリア膜と、A first barrier film made of a first conductive material;
前記第１のバリア膜上に選択的に形成された銅、銀、アルミニウムまたは金のうち少なくともいずれか一を含む導電膜と、A conductive film containing at least one of copper, silver, aluminum, or gold selectively formed on the first barrier film;
前記導電膜を覆うように形成された第２の導電材料からなる第２のバリア膜と、を有し、A second barrier film made of a second conductive material formed so as to cover the conductive film,
前記第２の部分は、The second part is
前記第１のバリア膜と、The first barrier film;
前記第１のバリア膜上に形成された前記第２のバリア膜と、を有し、The second barrier film formed on the first barrier film,
前記ゲート電極は、前記ゲート配線における前記第１の部分及び前記第２の部分のうち前記第２の部分のみを有することを特徴とする表示装置。The display device, wherein the gate electrode has only the second portion of the first portion and the second portion in the gate wiring.
前記ソース配線は、第１の部分及び第２の部分を有し、The source wiring has a first portion and a second portion,
前記第１の部分は、The first part is
第１の導電材料からなる第１のバリア膜と、A first barrier film made of a first conductive material;
前記第１のバリア膜上に選択的に形成された銅、銀、アルミニウムまたは金のうち少なくともいずれか一を含む導電膜と、A conductive film containing at least one of copper, silver, aluminum, or gold selectively formed on the first barrier film;
前記導電膜を覆うように形成された第２の導電材料からなる第２のバリア膜と、を有し、A second barrier film made of a second conductive material formed so as to cover the conductive film,
前記第２の部分は、The second part is
前記第１のバリア膜と、The first barrier film;
前記第１のバリア膜上に形成された前記第２のバリア膜と、を有し、The second barrier film formed on the first barrier film,
前記ソース電極は、前記ソース配線における前記第１の部分及び前記第２の部分のうち前記第２の部分のみを有することを特徴とする表示装置。The display device, wherein the source electrode has only the second portion of the first portion and the second portion in the source wiring.
前記複数の引き回し配線は、第１の部分及び第２の部分を有し、The plurality of routing wires have a first portion and a second portion,
前記第１の部分は、The first part is
第１の導電材料からなる第１のバリア膜と、A first barrier film made of a first conductive material;
前記第１のバリア膜上に選択的に形成された銅、銀、アルミニウムまたは金のうち少なくともいずれか一を含む導電膜と、A conductive film containing at least one of copper, silver, aluminum, or gold selectively formed on the first barrier film;
前記導電膜を覆うように形成された第２の導電材料からなる第２のバリア膜と、を有し、A second barrier film made of a second conductive material formed so as to cover the conductive film,
前記第２の部分は、The second part is
前記第１のバリア膜と、The first barrier film;
前記第１のバリア膜上に形成された前記第２のバリア膜と、を有し、The second barrier film formed on the first barrier film,
前記複数の配線は、前記複数の引き回し配線における前記第１の部分及び前記第２の部分のうち前記第１の部分のみを有し、The plurality of wirings have only the first part of the first part and the second part in the plurality of routing wirings,
前記複数の引き回し配線は、前記複数の引き回し配線同士が概略等しい抵抗値を有するように前記第２の部分を有することを特徴とする表示装置。The display device, wherein the plurality of routing lines have the second portion such that the plurality of routing lines have substantially equal resistance values.
前記第１のバリア膜、または、前記第２のバリア膜は、タングステン、モリブデン、クロム、チタン、タンタル、あるいはそれらの合金、あるいはそれらの窒化物のいずれか一であることを特徴とする表示装置。The display device, wherein the first barrier film or the second barrier film is any one of tungsten, molybdenum, chromium, titanium, tantalum, alloys thereof, or nitrides thereof. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006298961A JP2007165860A (en) | 2005-11-17 | 2006-11-02 | Display device and method of manufacturing same |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005333207 | 2005-11-17 | ||
| JP2006298961A JP2007165860A (en) | 2005-11-17 | 2006-11-02 | Display device and method of manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007165860A JP2007165860A (en) | 2007-06-28 |
| JP2007165860A5 true JP2007165860A5 (en) | 2009-10-08 |
Family
ID=38248346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006298961A Withdrawn JP2007165860A (en) | 2005-11-17 | 2006-11-02 | Display device and method of manufacturing same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007165860A (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5427390B2 (en) * | 2007-10-23 | 2014-02-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP2009251101A (en) * | 2008-04-02 | 2009-10-29 | Dainippon Printing Co Ltd | Electrode film for display apparatus, and method of manufacturing electrode film for display apparatus |
| US8465795B2 (en) | 2008-05-20 | 2013-06-18 | Palo Alto Research Center Incorporated | Annealing a buffer layer for fabricating electronic devices on compliant substrates |
| US8114720B2 (en) * | 2008-12-25 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011043194A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101771268B1 (en) * | 2009-10-09 | 2017-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing the same |
| KR101506304B1 (en) * | 2009-11-27 | 2015-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing the same |
| WO2015026139A1 (en) * | 2013-08-19 | 2015-02-26 | 주식회사 엘지화학 | Laminate having organic mask and method for manufacturing organic electroluminescent device using same |
| JP2016095990A (en) * | 2014-11-13 | 2016-05-26 | パイオニア株式会社 | Light emission device |
| JP2016095991A (en) * | 2014-11-13 | 2016-05-26 | パイオニア株式会社 | Light emission device |
| JP2018137084A (en) * | 2017-02-21 | 2018-08-30 | 株式会社東海理化電機製作所 | Organic el display device and method of manufacturing the same |
| CN107342375B (en) * | 2017-08-21 | 2019-05-31 | 深圳市华星光电半导体显示技术有限公司 | The production method and flexible display panels of flexible display panels |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373645A (en) * | 1986-09-17 | 1988-04-04 | Fujitsu Ltd | Semiconductor device |
| JPH0427125A (en) * | 1990-05-22 | 1992-01-30 | Hitachi Ltd | Method of producing wiring member |
| JPH0566421A (en) * | 1991-09-09 | 1993-03-19 | Sanyo Electric Co Ltd | Formation of multilayered wiring |
| JPH0682820A (en) * | 1992-09-01 | 1994-03-25 | Fujitsu Ltd | Production of thin-film transistor matrix |
| JPH08146463A (en) * | 1994-11-25 | 1996-06-07 | Sharp Corp | Switching element array and display device using the same |
| JP3406417B2 (en) * | 1995-04-25 | 2003-05-12 | 株式会社日立製作所 | Flip-chip type liquid crystal display element and liquid crystal display module |
| JP3856304B2 (en) * | 2002-03-25 | 2006-12-13 | 株式会社リコー | Resistance element in CSP and semiconductor device having CSP |
| JP2004103605A (en) * | 2002-09-04 | 2004-04-02 | Murata Mfg Co Ltd | Method of forming fine wiring |
-
2006
- 2006-11-02 JP JP2006298961A patent/JP2007165860A/en not_active Withdrawn
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