JP2007165744A - Semiconductor device, mounting structure, electrooptical device, method of manufacturing semiconductor device, method of manufacturing mounting structure, method of manufacturing electrooptical device, and electronic equipment - Google Patents

Semiconductor device, mounting structure, electrooptical device, method of manufacturing semiconductor device, method of manufacturing mounting structure, method of manufacturing electrooptical device, and electronic equipment Download PDF

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Publication number
JP2007165744A
JP2007165744A JP2005362794A JP2005362794A JP2007165744A JP 2007165744 A JP2007165744 A JP 2007165744A JP 2005362794 A JP2005362794 A JP 2005362794A JP 2005362794 A JP2005362794 A JP 2005362794A JP 2007165744 A JP2007165744 A JP 2007165744A
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Prior art keywords
protruding
electrode
projecting
electronic component
electrode layer
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Japanese (ja)
Inventor
Atsushi Saito
淳 斎藤
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Epson Imaging Devices Corp
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Epson Imaging Devices Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure or a manufacturing method capable of easily realizing small pitch of an electrode in a projection electrode provided with a projection made of a resin, and suppressing prolonging of manufacturing processes and an increase in manufacturing cost. <P>SOLUTION: This semiconductor device is provided with a protruding electrode 120B having a protrusion 124 formed of a resin and an electrode layer 125 formed on the protrusion. The protrusion has a shape in which a plurality of mount-like protrusions 124a are integrally coupled in such a mode that one parts of circumferential portions 124b thereof are connected, and is formed in such a way that the plurality of protruding electrodes are provided by forming the conductive layer is formed on each of the protrusions. Connection portions 124v each formed by connecting adjacent protruding portions are arranged between the electrode layers each provided on these protruding portions. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は半導体装置、実装構造体、電気光学装置、半導体装置の製造方法、実装構造体
の製造方法、電気光学装置の製造方法、及び、電子機器に係り、特に、半導体装置その他
の電子部品に設けられる場合に好適な突起電極の構造及び製法に関する。
The present invention relates to a semiconductor device, a mounting structure, an electro-optical device, a method for manufacturing a semiconductor device, a method for manufacturing a mounting structure, a method for manufacturing an electro-optical device, and an electronic apparatus, and more particularly to a semiconductor device and other electronic components. The present invention relates to a structure and manufacturing method of a protruding electrode that is suitable when provided.

一般に、液晶表示体に駆動用ICを実装する方法としては、駆動用ICにメッキ等によ
り突起(バンプ)電極を形成し、液晶表示体を構成するガラス基板上に形成した配線パタ
ーンに対して、異方性導電材(ACF又はACP)を介して駆動用ICを加熱しながら加
圧することにより、異方性導電材中の導電性粒子を挟んだ状態で突起電極が配線パターン
に導電接続され、しかも、駆動用ICが異方性導電材中の絶縁樹脂によってガラス基板上
に接着されるようにした、COG実装とよばれる方法が広く知られている。
In general, as a method of mounting a driving IC on a liquid crystal display body, a bump (bump) electrode is formed on the driving IC by plating or the like, and a wiring pattern formed on a glass substrate constituting the liquid crystal display body, By applying pressure while heating the driving IC via an anisotropic conductive material (ACF or ACP), the protruding electrode is conductively connected to the wiring pattern with the conductive particles in the anisotropic conductive material sandwiched therebetween, In addition, a method called COG mounting in which the driving IC is bonded onto the glass substrate with an insulating resin in an anisotropic conductive material is widely known.

ところが、近年では、液晶表示体の高精細化に伴って電極数が増大したことにより、駆
動用ICの電極間隔が小さくなって(狭ピッチ化されて)きているため、上記方法では、
隣接する突起電極間に導電性粒子を介在した電気的短絡が発生しやすくなり、実装不良が
多くなるという問題点がある。
However, in recent years, since the number of electrodes has increased with the increase in definition of the liquid crystal display, the electrode interval of the driving IC has become smaller (narrower pitch).
There is a problem in that an electrical short circuit in which conductive particles are interposed between adjacent protruding electrodes is likely to occur, resulting in increased mounting defects.

そこで、上記の異方性導電材を用いた実装方法に代えて、図13乃至図15に示すよう
に、パッド2及び絶縁膜3を形成してなる駆動用ICの基板1上に、樹脂よりなる突出体
4を形成し、この突出体4上に金属薄膜等からなる電極層5を形成してなる突起電極を構
成する方法が提案されている(例えば、以下の特許文献1参照)。この方法では、この突
起電極をガラス基板上に形成された配線パターンに接触させて加圧するとともに、絶縁樹
脂8によって駆動用ICを基板に接着することで、導電性粒子を用いずに実装を行うこと
ができるため、狭ピッチ化が進んでも、隣接電極間の短絡を防止することができる。
Therefore, instead of the mounting method using the anisotropic conductive material, as shown in FIGS. 13 to 15, a resin is formed on the substrate 1 of the driving IC formed with the pad 2 and the insulating film 3. There has been proposed a method of forming a protruding electrode 4 and forming a protruding electrode by forming an electrode layer 5 made of a metal thin film or the like on the protruding body 4 (see, for example, Patent Document 1 below). In this method, the bump electrode is brought into contact with the wiring pattern formed on the glass substrate and pressed, and the driving IC is bonded to the substrate with the insulating resin 8 to perform mounting without using conductive particles. Therefore, even if the pitch is reduced, a short circuit between adjacent electrodes can be prevented.

また、図14及び図15に示すように、上記の突出体4の表面を凸曲面状に構成するこ
とにより、実装時における突出体の弾性変形を測定しやすくして、接続信頼性の検査が容
易に行えるようにした突起電極の構造並びに半導体装置の製造方法が提案されている(例
えば、以下の特許文献2参照)。この方法では、突出体4を半球状に構成したり半円柱状
に構成したりすることにより、実装時における加圧力で突出体が弾性変形すると、突起電
極と、実装すべき基板6上の配線パターン7との間の接触部が点接触状態若しくは線接触
状態から面接触状態へと変わるため、当該接触部の形状を見ることで簡単に導電接続状態
を知ることができる。
特開平2−272737号公報 特開2005−136402号公報
Further, as shown in FIGS. 14 and 15, by configuring the surface of the protrusion 4 to have a convex curved surface, it is easy to measure the elastic deformation of the protrusion at the time of mounting, and the connection reliability is inspected. Proposed electrode structures and semiconductor device manufacturing methods that can be easily performed have been proposed (for example, see Patent Document 2 below). In this method, when the protrusion 4 is formed into a hemispherical shape or a semi-cylindrical shape, and the protrusion is elastically deformed by a pressing force during mounting, the protruding electrode and the wiring on the substrate 6 to be mounted Since the contact portion with the pattern 7 changes from a point contact state or a line contact state to a surface contact state, the conductive connection state can be easily known by looking at the shape of the contact portion.
JP-A-2-272737 Japanese Patent Laid-Open No. 2005-136402

しかしながら、前述の樹脂からなる突出体を備えた突起電極を用いる方法においては、
上述の突出体の弾性変形量を確保して充分な接続信頼性を得るために、突起電極の高さを
通常10〜20μm程度とする必要がある。このため、特許文献1に開示されている突起
電極や特許文献2に開示されている半球状の突起電極(図13(a)参照)のように、突
出体ごとに一つの電極層を形成して突起電極とする場合には、突起電極の間隔(ピッチ)
を上記の高さの2倍以上に設定しなければならず、電極の狭ピッチ化に限界があるという
問題点がある。
However, in the method using the protruding electrode provided with the protruding body made of the aforementioned resin,
In order to secure the above-mentioned elastic deformation amount of the projecting body and to obtain sufficient connection reliability, it is necessary that the height of the protruding electrode is usually about 10 to 20 μm. For this reason, one electrode layer is formed for each protrusion, as in the protruding electrode disclosed in Patent Document 1 and the hemispherical protruding electrode disclosed in Patent Document 2 (see FIG. 13A). When using projecting electrodes, the spacing (pitch) between the projecting electrodes
Has to be set to at least twice the above height, and there is a problem in that there is a limit to narrowing the pitch of the electrodes.

また、特許文献2に開示されている半円柱状の突出体を備えた突起電極(図13(b)
参照)のように、突出体を延長形状とし、一つの突出体上に複数の電極層を形成して複数
の突起電極を構成する場合には、上記とは異なり、突起電極の高さによって電極間隔が制
約を受けることはない。しかし、実装時において電極層間に突出体が存在すると突起電極
が変形しにくくなるとともに絶縁樹脂の流動性を妨げることとなるので、電極の狭ピッチ
化を図るためには、特許文献2に記載されているように、電極層5間の突出体4の一部又
は全部を酸素プラズマエッチング等によって除去する必要があり、これによって製造工程
が長時間化し、製造コストが増加するという問題点がある。
Further, a protruding electrode provided with a semi-cylindrical protrusion disclosed in Patent Document 2 (FIG. 13B).
Unlike the above, when the projecting body is formed in an extended shape and a plurality of electrode layers are formed on one projecting body as in the above, the electrode differs depending on the height of the projecting electrode. The interval is not constrained. However, if a protruding body exists between the electrode layers during mounting, the protruding electrode is not easily deformed and the fluidity of the insulating resin is hindered. To reduce the pitch of the electrodes, it is described in Patent Document 2. As described above, it is necessary to remove part or all of the protrusions 4 between the electrode layers 5 by oxygen plasma etching or the like, which causes a problem that the manufacturing process takes a long time and the manufacturing cost increases.

そこで、本発明は上記問題点を解決するものであり、その目的は、樹脂からなる突出体
を備えた突起電極において電極の狭ピッチ化を容易に実現できるとともに、製造工程の長
時間化や製造コストの増加を抑制することのできる構造若しくは製法を実現することにあ
る。
Therefore, the present invention solves the above-mentioned problems, and the object thereof is to easily realize a narrow pitch of the electrode in the protruding electrode provided with the protruding body made of resin, and to increase the manufacturing process time and manufacturing. The object is to realize a structure or manufacturing method capable of suppressing an increase in cost.

斯かる実情に鑑み、本発明の半導体装置は、弾性部材(弾性素材、例えば樹脂)により
形成された突出体及び該突出体上に形成された電極層を有する突起電極を備えた半導体装
置において、前記突出体は、複数の山状の突出部をそれらの周縁部の一部が接続された態
様で一体に連結した形状を有し、複数の前記突出部にそれぞれ前記電極層が形成されるこ
とにより複数の前記突起電極が設けられてなり、隣接してなる前記突出部同士が接続され
てなる接続部は、前記隣接してなる突出部にそれぞれ設けられてなる前記電極層の間に配
置されてなることを特徴とする。
In view of such a situation, the semiconductor device of the present invention is a semiconductor device including a protruding body formed of an elastic member (elastic material, for example, resin) and a protruding electrode having an electrode layer formed on the protruding body. The projecting body has a shape in which a plurality of mountain-shaped projecting portions are integrally connected in a form in which a part of their peripheral portions is connected, and the electrode layer is formed on each of the projecting portions. A plurality of the protruding electrodes are provided, and a connecting portion in which the adjacent protruding portions are connected to each other is disposed between the electrode layers provided in the adjacent protruding portions, respectively. It is characterized by.

この発明によれば、複数の山状の突出部をそれらの周縁部が接続された態様で一体に連
結した形状を有する突出体に対して、それらの突出部にそれぞれ電極層を形成して突起電
極とすることにより、電極間隔を短縮して狭ピッチ化することが可能になるとともに、実
装時の突起電極の弾性変形を容易にすることができ、しかも、突起電極間の絶縁樹脂の流
動性を確保することができる。また、複数の突出部はそれぞれ山状に構成されているので
、頂点の全周が下方に傾斜する構造とされるため、突出部間の間隔が近接しても、突出部
の弾性変形や絶縁樹脂の流動性を妨げにくいという利点がある。
According to the present invention, with respect to a projecting body having a shape in which a plurality of mountain-shaped projecting parts are integrally coupled in a form in which their peripheral parts are connected, an electrode layer is formed on each projecting part to project By using electrodes, the pitch between the electrodes can be shortened to reduce the pitch, and the elastic deformation of the protruding electrodes during mounting can be facilitated, and the fluidity of the insulating resin between the protruding electrodes Can be secured. In addition, since each of the plurality of protrusions is formed in a mountain shape, the entire circumference of the apex is inclined downward, so that even if the distance between the protrusions is close, elastic deformation or insulation of the protrusions There is an advantage that the fluidity of the resin is hardly hindered.

なお、山状とは、半球状、半回転楕円体状、円錐状、円錐台状、角錐状、角錐台状、凸
曲面状などといった、頂部の全周囲に傾斜面が存在する形状を言う。
The mountain shape means a shape having an inclined surface around the entire top, such as a hemispherical shape, a semi-spheroid shape, a cone shape, a truncated cone shape, a pyramid shape, a truncated pyramid shape, or a convex curved surface shape.

本発明において、前記突出部は凸曲面上の頂部を有することが好ましい。これによれば
、突出部とこの上に形成された電極層とによって構成される突起電極は、突出部が凸曲面
状の頂部を有することによって頂部近傍の傾斜がなだらかになることから、導電体に導電
接触して圧力を受けた際に導電接触面積を確保しやすいとともに、突出部の弾性変形量に
応じて導電体との接触面積が急増するので、導電接続状態の安定性や再現性を高めること
ができ、しかも、接触面形状を確認することで導電接続状態の検査を容易に行うことが可
能になる。
In this invention, it is preferable that the said protrusion part has a top part on a convex curve. According to this, the protruding electrode constituted by the protruding portion and the electrode layer formed thereon has a gentle slope near the top due to the protruding portion having a convex-curved top. It is easy to ensure a conductive contact area when receiving pressure due to conductive contact, and the contact area with the conductor rapidly increases according to the amount of elastic deformation of the protrusion, so that the stability and reproducibility of the conductive connection state is improved. In addition, it is possible to easily inspect the conductive connection state by confirming the shape of the contact surface.

本発明において、前記突出部は直線状に配列されていることが好ましい。突出部を直線
状に配列させることにより、突起電極を直線状に配列形成することができるため、例えば
、電子部品に配列された複数のパッド部に対応させて突起電極を形成できる。
In the present invention, the protrusions are preferably arranged in a straight line. By arranging the protruding portions in a straight line, the protruding electrodes can be formed in a linear shape, and thus, for example, the protruding electrodes can be formed corresponding to a plurality of pad portions arranged in the electronic component.

本発明において、前記突出部は千鳥状に配列されていることが好ましい。突出部を千鳥
状に配列させることにより、突起電極の実質的な狭ピッチ化をさらに容易に達成できる。
In the present invention, the protrusions are preferably arranged in a staggered manner. By arranging the protrusions in a staggered manner, the pitch of the protruding electrodes can be more easily reduced.

次に、本発明の実装構造体は、弾性部材(弾性素材、例えば樹脂)により形成された突
出体及び該突出体上に形成された電極層を有する突起電極を備えた電子部品と、前記突起
電極に導電接触した導電体を備えた基板と、前記電子部品と前記基板とを接着する絶縁樹
脂とを具備する実装構造体において、前記突出体は、複数の山状の突出部をそれらの周縁
部の一部が接続された態様で一体に連結した形状を有し、複数の前記突出部にそれぞれ前
記導電層が形成されることにより複数の前記突起電極が設けられてなり、隣接してなる前
記突出部同士が接続されてなる接続部は、前記隣接してなる突出部にそれぞれ設けられて
なる前記電極層の間に配置されてなることを特徴とする。
Next, the mounting structure of the present invention includes an electronic component including a protruding body formed of an elastic member (elastic material, for example, resin) and a protruding electrode having an electrode layer formed on the protruding body, and the protrusion. In a mounting structure comprising a substrate provided with a conductor in conductive contact with an electrode, and an insulating resin that bonds the electronic component and the substrate, the projecting body has a plurality of mountain-shaped projecting portions at the periphery thereof. A plurality of protruding electrodes are provided adjacent to each other by forming the conductive layer on each of the plurality of projecting portions. The connecting portion formed by connecting the protruding portions is disposed between the electrode layers provided on the adjacent protruding portions, respectively.

また、本発明の電気光学装置は、弾性部材(弾性素材、例えば樹脂)により形成された
突出体及び該突出体上に形成された電極層を有する突起電極を備えた電子部品と、電気光
学物質が配されてなる基板を有し、当該基板上に前記突起電極に導電接触した導電体を備
えた電気光学パネルと、前記電子部品と前記基板とを接着する絶縁樹脂とを具備する電気
光学装置において、前記突出体は、複数の山状の突出部をそれらの周縁部の一部が接続さ
れた態様で一体に連結した形状を有し、複数の前記突出部にそれぞれ前記導電層が形成さ
れることにより複数の前記突起電極が設けられてなり、隣接してなる前記突出部同士が接
続されてなる接続部は、前記隣接してなる突出部にそれぞれ設けられてなる前記電極層の
間に配置されてなることを特徴とする。
In addition, an electro-optical device according to the present invention includes an electronic component including a protruding body formed of an elastic member (elastic material, for example, resin) and a protruding electrode having an electrode layer formed on the protruding body, and an electro-optical material. An electro-optical device comprising: a substrate having a substrate disposed thereon; and an electro-optical panel provided with a conductor that is in conductive contact with the protruding electrode on the substrate; and an insulating resin that bonds the electronic component and the substrate. The projecting body has a shape in which a plurality of mountain-shaped projecting portions are integrally coupled in a form in which a part of their peripheral portions is connected, and the conductive layer is formed on each of the projecting portions. A plurality of the protruding electrodes are provided, and a connecting portion in which the adjacent protruding portions are connected to each other is provided between the electrode layers provided in the adjacent protruding portions, respectively. Characterized by being arranged To.

さらに、本発明の半導体装置の製造方法は、弾性部材により形成された突出体及び該突
出体上に形成された電極層を有する半導体装置の製造方法において、複数の突出部をそれ
らの周縁部の一部が接続された態様で一体に連結した形状の前記突出体を形成する突出体
形成工程と、複数の前記突出部上にそれぞれ前記電極層を形成する電極層形成工程と、を
具備し、隣接してなる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出
部にそれぞれ設けられてなる前記電極層の間に配置されてなることを特徴とする。
Furthermore, the method for manufacturing a semiconductor device according to the present invention provides a method for manufacturing a semiconductor device having a protrusion formed by an elastic member and an electrode layer formed on the protrusion. A projecting body forming step of forming the projecting body integrally connected in a partially connected manner, and an electrode layer forming step of forming the electrode layer on each of the plurality of projecting portions, The connecting portion formed by connecting the adjacent projecting portions is arranged between the electrode layers respectively provided on the adjacent projecting portions.

この発明によれば、突出体形成工程において複数の突出部をそれらの周縁部の一部が接
続された態様で一体に連結された形状の突出体を形成し、その後、電極層を突出部上に形
成するようにしたので、突起電極の狭ピッチ化を図ることができる。また、複数の突出部
の周縁部は接続されているものの、頂部はそれぞれ独立しているため、突起電極の弾性変
形を容易化し、しかも絶縁樹脂の流動性を確保するために、電極層の形成後に電極層間の
領域の一部若しくは全部を除去する工程を設けなくてもよく、或いは、当該工程を設けた
場合でも処理時間を低減できるため、製造工程数の削減、若しくは、製造時間の短縮を図
ることができる。
According to the present invention, in the protrusion forming step, a plurality of protrusions are formed in a form integrally connected in a form in which a part of their peripheral portions are connected, and then the electrode layer is formed on the protrusions. Therefore, it is possible to reduce the pitch of the protruding electrodes. In addition, although the peripheral portions of the plurality of protruding portions are connected, the top portions are independent from each other, so that the electrode layer is formed in order to facilitate the elastic deformation of the protruding electrodes and ensure the fluidity of the insulating resin. It is not necessary to provide a process for removing part or all of the region between the electrode layers later, or even if the process is provided, the processing time can be reduced, so that the number of manufacturing steps can be reduced or the manufacturing time can be reduced. You can plan.

本発明において、前記突出体が山状に形成されることが好ましい。これによれば、各突
出部が山状に形成されるので、突出体形成工程における突出体の成形が容易になる。例え
ば、ドライエッチング法などの手間がかかり生産性の低い方法ではなく、フォトリソグラ
フィ法やインプリント法(転写法)等の簡易で量産性の良好な方法によってきわめて簡単
に突出体を形成できる。
In the present invention, it is preferable that the protruding body is formed in a mountain shape. According to this, since each protrusion part is formed in mountain shape, shaping | molding of the protrusion in a protrusion formation process becomes easy. For example, the protrusions can be formed very easily by a simple method with good mass productivity, such as a photolithography method or an imprint method (transfer method), rather than a low-productivity method such as a dry etching method.

本発明において、前記電極層形成工程の後に、前記突出体における前記突出部間の領域
の一部若しくは全部を除去する工程をさらに具備することが好ましい。電極層形成工程の
後に突出部間の領域の一部若しくは全部を除去する工程をさらに設けることにより、突起
電極の弾性変形をさらに容易にすることができるとともに、絶縁樹脂の流動性をさらに高
めることができる。また、最初から突出体には凹部が設けられていることにより、当該工
程の処理時間を短縮することができる。
In the present invention, it is preferable that the method further includes a step of removing a part or all of a region between the protruding portions in the protruding body after the electrode layer forming step. By further providing a step of removing part or all of the region between the protruding portions after the electrode layer forming step, the elastic deformation of the protruding electrode can be further facilitated and the fluidity of the insulating resin can be further increased. Can do. Further, since the protrusion is provided with the recess from the beginning, the processing time of the process can be shortened.

また、本発明の実装構造体の製造方法は、樹脂により形成された突出体及び該突出体上
に形成された電極層を有する突起電極を備えた電子部品と、前記突起電極に導電接触した
導電体を備えた基板と、前記電子部品と前記基板とを接着する絶縁樹脂とを具備する実装
構造体の製造方法において、前記電子部品に複数の突出部をそれらの周縁部の一部が接続
された態様で一体に連結した形状の前記突出体を形成する突出体形成工程と、複数の前記
突出部上にそれぞれ前記電極層を形成する電極層形成工程と、前記突起電極が前記導電体
に導電接続されるように前記電子部品を前記基板上に実装する電子部品実装工程と、を具
備し、隣接してなる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出部
にそれぞれ設けられてなる前記電極層の間に配置されてなることを特徴とする。
Further, the method for manufacturing a mounting structure according to the present invention includes an electronic component including a protruding body formed of a resin and a protruding electrode having an electrode layer formed on the protruding body, and an electrically conductive contact with the protruding electrode. In a manufacturing method of a mounting structure comprising a substrate provided with a body and an insulating resin that bonds the electronic component and the substrate, a plurality of protrusions are connected to the electronic component and a part of their peripheral portions is connected. A projecting body forming step of forming the projecting bodies integrally connected with each other, an electrode layer forming step of forming the electrode layer on each of the plurality of projecting portions, and the projecting electrodes are electrically connected to the conductor. An electronic component mounting step of mounting the electronic component on the substrate so as to be connected, and the connecting portion formed by connecting the adjacent protruding portions to the adjacent protruding portion Each provided Characterized by comprising arranged between the electrode layers.

さらに、本発明の電気光学装置の製造方法は、樹脂により形成された突出体及び該突出
体上に形成された電極層を有する突起電極を備えた電子部品と、電気光学物質が配されて
なる基板を有し、当該基板上に前記突起電極に導電接触した導電体を備えた電気光学パネ
ルと、前記電子部品と前記基板とを接着する絶縁樹脂とを具備する電気光学装置の製造方
法において、前記電子部品に複数の突出部をそれらの周縁部の一部が接続された態様で一
体に連結した形状の前記突出体を形成する突出体形成工程と、複数の前記突出部上にそれ
ぞれ前記電極層を形成する電極層形成工程と、前記突起電極が前記導電体に導電接続され
るように前記電子部品を前記基板上に実装する電子部品実装工程と、を具備し、隣接して
なる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出部にそれぞれ設け
られてなる前記電極層の間に配置されてなることを特徴とする。
Furthermore, the electro-optical device manufacturing method of the present invention includes a projecting body formed of a resin and a projecting electrode having an electrode layer formed on the projecting body, and an electro-optic material. In a method for manufacturing an electro-optical device, comprising: an electro-optical panel having a substrate, and an electro-optical panel including a conductor that is in conductive contact with the protruding electrode; and an insulating resin that bonds the electronic component and the substrate. A projecting body forming step of forming the projecting body having a shape in which a plurality of projecting sections are integrally connected to the electronic component in a form in which a part of their peripheral portions is connected, and the electrodes on the projecting sections respectively. An electrode layer forming step of forming a layer, and an electronic component mounting step of mounting the electronic component on the substrate so that the protruding electrode is conductively connected to the conductor, and the protrusions adjacent to each other Parts are connected Connecting portion made is characterized by comprising disposed between the adjacent composed respectively provided on the protruding portion formed by the electrode layer.

次に、本発明の電気光学装置は、上記の電気光学装置を搭載してなることを特徴とする
。電子機器としては、例えば、携帯電話機、携帯型情報端末、電子時計、テレビジョン装
置、プロジェクタなどが挙げられる。
Next, an electro-optical device according to the present invention includes the above-described electro-optical device. Examples of the electronic device include a mobile phone, a portable information terminal, an electronic watch, a television device, and a projector.

次に、添付図面を参照して本発明の実施形態について詳細に説明する。図1は本発明に
係る突起電極の構造を示す部分平面図、図2は図1のII−II断面矢視図、図3は実装時の
断面図である。
Next, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a partial plan view showing the structure of a protruding electrode according to the present invention, FIG. 2 is a sectional view taken along the line II-II in FIG. 1, and FIG.

本発明に係る突起電極が形成される基体としては、各種電子部品或いは半導体装置が挙
げられるが、特に、以下の説明では、シリコン単結晶等よりなる半導体基板等で構成され
る基板121上にアルミニウム等で構成されるパッド122が露出するように形成され、
このパッド122以外の表面が酸化シリコン膜等で構成される絶縁膜123で被覆された
ものを例示する。
Examples of the substrate on which the protruding electrode according to the present invention is formed include various electronic components and semiconductor devices. In particular, in the following description, aluminum is formed on a substrate 121 composed of a semiconductor substrate made of silicon single crystal or the like. Etc., so as to expose the pad 122 composed of
An example in which the surface other than the pad 122 is covered with an insulating film 123 made of a silicon oxide film or the like is illustrated.

本実施形態では、上記の基板121における上記パッド122の形成部位とは異なる部
位に、弾性部材である樹脂により突出体124が基板121の表面より突出するように設
けられている。突出体124は任意の樹脂を用いることができるが、特に、アクリル樹脂
、フェノール樹脂、シリコーン樹脂、ポリイミド樹脂、シリコーン変性ポリイミド樹脂、
エポキシ樹脂などを用いることができる。突出体124は製造を容易にする関係上、感光
性樹脂で構成されることが好ましい。感光性樹脂としては、露光条件によって形状制御が
可能であるアクリル樹脂がパターニングを容易にする上で最も好ましい。なお、実装構造
において必要な弾性特性を有するものであれば、上記の樹脂に限らず、他の任意の弾性素
材を用いることができる。
In the present embodiment, the projecting body 124 is provided at a portion different from the portion where the pad 122 is formed on the substrate 121 so as to protrude from the surface of the substrate 121 by a resin which is an elastic member. The protrusion 124 can be made of any resin, and in particular, an acrylic resin, a phenol resin, a silicone resin, a polyimide resin, a silicone-modified polyimide resin,
An epoxy resin or the like can be used. The protrusion 124 is preferably made of a photosensitive resin in order to facilitate manufacture. As the photosensitive resin, an acrylic resin whose shape can be controlled depending on exposure conditions is most preferable for facilitating patterning. In addition, as long as it has an elastic characteristic required in a mounting structure, not only said resin but other arbitrary elastic materials can be used.

本実施形態の突出体124は、複数の突出部124aがそれらの周縁部の一部が接続さ
れる態様で連結した形状を有している。各突出部124aはそれぞれ山状に構成されてお
り、それぞれに頂部を備えている。ここで、山状というのは、頂部の全周囲に傾斜面が存
在する形状を言う。したがって、本実施形態の突出体124はいわゆる山脈状に構成され
たものとなる。図示例の場合、突出部124aは半球状に構成され、この半球状の周縁部
が隣接する突出部124aに周縁部の一部(接続部)124bにて接続されている。また
、突出体124は、複数の突出部124aが一列に直線状に配列された形状となっている
The projecting body 124 of the present embodiment has a shape in which a plurality of projecting parts 124a are connected in a manner in which a part of their peripheral parts is connected. Each protrusion 124a is formed in a mountain shape, and each has a top. Here, the mountain shape refers to a shape in which an inclined surface exists around the entire top. Therefore, the projecting body 124 of the present embodiment is configured in a so-called mountain range. In the case of the illustrated example, the protruding portion 124a is formed in a hemispherical shape, and the hemispherical peripheral portion is connected to the adjacent protruding portion 124a by a part (connecting portion) 124b of the peripheral portion. Further, the protrusion 124 has a shape in which a plurality of protrusions 124a are linearly arranged in a line.

突出体124上には電極層125が形成されている。電極層125は、パッド2に導電
接続されるとともに突出部124aの頂部上に配置されるように構成され、パッド2上か
ら突出部124aの少なくとも頂部にまで伸びる帯形状の薄膜(ストリップ)として形成
されている。電極層125の素材構成としては、Ti−W上にAuを積層した構造、或い
は、Cr上にAuを積層した構造などが好適に用いられる。ただし、Au、Ti−W、C
u、Ni、Pd、Al、Cr、Ti、W、Ni−V、鉛フリー半田等の各種金属(合金)
を単層とした構造、或いは、これらを適宜の組み合わせで積層した構造を用いることもで
きる。
An electrode layer 125 is formed on the protruding body 124. The electrode layer 125 is configured to be conductively connected to the pad 2 and disposed on the top of the protrusion 124a, and is formed as a strip-shaped thin film (strip) extending from the top of the pad 2 to at least the top of the protrusion 124a. Has been. As a material configuration of the electrode layer 125, a structure in which Au is laminated on Ti-W, a structure in which Au is laminated on Cr, or the like is preferably used. However, Au, Ti-W, C
Various metals (alloys) such as u, Ni, Pd, Al, Cr, Ti, W, Ni-V, lead-free solder
It is also possible to use a structure in which a single layer is formed, or a structure in which these are stacked in an appropriate combination.

本実施形態では、突出体124上に複数の電極層125が形成されることにより、各電
極層に対応する複数の突起電極120Bが構成されている。各電極層125は突出体12
4の複数の突出部124aの頂部上にそれぞれ配置されるように構成されている。特に、
図示例の場合、電極層125は突出体124の全ての突出部124a上に形成されている
。なお、隣接する突出部124間に設けられた谷部124vは、隣接する電極層125の
間に配置されている。
In the present embodiment, the plurality of electrode layers 125 are formed on the projecting body 124, whereby the plurality of protruding electrodes 120B corresponding to each electrode layer are configured. Each electrode layer 125 is a protrusion 12.
It is comprised so that it may each be arrange | positioned on the top part of the some protrusion part 124a of four. In particular,
In the illustrated example, the electrode layer 125 is formed on all the protruding portions 124 a of the protruding body 124. Note that the troughs 124v provided between the adjacent protrusions 124 are disposed between the adjacent electrode layers 125.

図3に示すように、上記の突起電極120Bは、実装されるべき基板111上に形成さ
れた導電体(配線パターン、後述する駆動配線及び入力配線)117,118に対して導
電接続される。この基板111は特に限定されるものではないが、本実施形態の場合、ガ
ラス基板、半導体基板、セラミック基板、硬質樹脂基板等の硬質基板であることが好まし
い。これらの硬質基板では基板素材自体が弾性変形しにくいため、上記の弾性変形可能な
樹脂からなる突出体124を備えた突起電極120Bを設けることが導電接続状態を安定
かつ再現性よく得る上で効果的である。
As shown in FIG. 3, the protruding electrode 120B is conductively connected to conductors (wiring pattern, driving wiring and input wiring described later) 117 and 118 formed on the substrate 111 to be mounted. Although this board | substrate 111 is not specifically limited, In this embodiment, it is preferable that they are hard substrates, such as a glass substrate, a semiconductor substrate, a ceramic substrate, a hard resin substrate. Since the substrate material itself is not easily elastically deformed with these hard substrates, it is effective to provide the protruding electrode 120B provided with the protruding body 124 made of the elastically deformable resin in order to obtain a conductive connection state stably and with good reproducibility. Is.

実装時においては、突起電極120Bを導電体117,118に当接させ、圧力を加え
ることによって突出体124を弾性変形させる。そして、この状態で基板121と111
との間に絶縁樹脂128を導入して、接着固定する。なお、絶縁樹脂128としては、流
動性を有する絶縁樹脂材(NCP)を用いてもよく、或いは、半固形状態のシート状の絶
縁樹脂材(NCF)を基板121と111の間に介挿し、加熱・加圧によって軟化・流動
させる態様で用いてもよい。すなわち、半固形状態の絶縁樹脂材を介して基板111上に
基板121を配置し、基板121を加熱しながら加圧することで、絶縁樹脂材が軟化して
上記突起電極120Bの電極層125が導電体117,118に導電接続され、しかも、
突出体124の各突出部124aが弾性変形した状態となり、さらに、この状態で、絶縁
樹脂128が熱硬化することによって絶縁樹脂128の接着力により導電接続状態が保持
される。
At the time of mounting, the protruding electrode 120B is brought into contact with the conductors 117 and 118, and the protrusion 124 is elastically deformed by applying pressure. In this state, the substrates 121 and 111
Insulating resin 128 is introduced between and fixed. As the insulating resin 128, a fluid insulating resin material (NCP) may be used, or a semi-solid sheet-like insulating resin material (NCF) is interposed between the substrates 121 and 111, You may use in the aspect softened and fluidized by heating and pressurization. That is, the substrate 121 is disposed on the substrate 111 through the semi-solid insulating resin material, and pressurizing while heating the substrate 121, so that the insulating resin material is softened and the electrode layer 125 of the protruding electrode 120B becomes conductive. Conductively connected to the bodies 117, 118;
Each projecting portion 124a of the projecting body 124 is in an elastically deformed state, and in this state, the insulating resin 128 is thermally cured, so that the conductive connection state is maintained by the adhesive force of the insulating resin 128.

図4は実装前の突起電極120Bの断面形状を示す拡大断面図、図5は実装後の突起電
極120Bの断面形状を示す拡大断面図である。図4に示すように、本実施形態の突出部
124aは、従来の突起電極の半球状の突出体とほぼ同様の寸法や形状を有するものであ
り、突出部124aの高さをhとし、突起電極120Bが配列される方向に見た突出部1
24aの幅をwとすると、通常、幅wは高さhの約2倍、w〜2hとなる。ここで、一般
的な高さhの値は10〜20μm程度である。そして、従来構造では、半球状の突出体の
幅によって突起電極の配列方向の間隔が制限されるため、突起電極の配列ピッチは突出体
の幅以上、すなわち、突出体の高さhの2倍以上となっていた。
4 is an enlarged cross-sectional view showing the cross-sectional shape of the protruding electrode 120B before mounting, and FIG. 5 is an enlarged cross-sectional view showing the cross-sectional shape of the protruding electrode 120B after mounting. As shown in FIG. 4, the protrusion 124a of the present embodiment has substantially the same size and shape as the conventional hemispherical protrusion of the protruding electrode, and the height of the protrusion 124a is h. Projection 1 viewed in the direction in which electrodes 120B are arranged
Assuming that the width of 24a is w, the width w is normally about twice the height h and w to 2h. Here, the general value of the height h is about 10 to 20 μm. In the conventional structure, since the spacing in the arrangement direction of the protruding electrodes is limited by the width of the hemispherical protruding body, the arrangement pitch of the protruding electrodes is greater than the width of the protruding body, that is, twice the height h of the protruding body. It was more than that.

本実施形態では、複数の突出部124aをそれらの周縁部が接続される態様で一体に連
結してなる突出体124を設け、突出部124aごとに電極層125を形成して突起電極
120Bとしているので、突出部124aの形状寸法を従来の突出体と同様に設定しても
、突起電極120Bの配列ピッチPは突出部124aの幅w未満となる。例えば、配列ピ
ッチPを幅w未満で高さh以上とすることが可能であり、高さh以下とすることも不可能
ではない。
In the present embodiment, a protrusion 124 is formed by integrally connecting a plurality of protrusions 124a in such a manner that peripheral edges thereof are connected, and an electrode layer 125 is formed for each protrusion 124a to form a protruding electrode 120B. Therefore, even if the shape and size of the protruding portion 124a are set in the same manner as the conventional protruding body, the arrangement pitch P of the protruding electrodes 120B is less than the width w of the protruding portion 124a. For example, the arrangement pitch P can be less than the width w and not less than the height h, and not less than the height h.

また、突出部124aを山状に形成したことにより、図1及び図2に示すように、突起
電極120Bの頂部120pの周囲が全て傾斜面として構成されることとなるため、各突
起電極120Bの弾性変形が突起電極120Bの配列方向についても発生しやすくなり、
実装時における弾性変形の態様が等方的になるため、突起電極120Bの間隔を狭めても
弾性変形の容易性を確保しやすいという効果が得られる。また、同様の理由により、突出
体124の谷部124v上に形成される、隣接する突出体124a間の間隙は、図1の平
面図に示すように突起電極120Bの頂部120p間を結ぶ線上(図示しないが図1中で
は水平線となる。)の平面位置から突出部124aの配列方向と直交する方向(図1の上
下両側)に向けて開くように構成されるため、実装時における絶縁樹脂128の突起電極
120B間の流動性が良好となり、突起電極120B間の領域から絶縁樹脂128が円滑
に排出され、突起電極120Bと導電体117,118との導電接触状態が確実に得られ
るという効果もある。
Further, since the protrusions 124a are formed in a mountain shape, as shown in FIGS. 1 and 2, the entire periphery of the top 120p of the protruding electrode 120B is configured as an inclined surface. Elastic deformation is likely to occur in the arrangement direction of the protruding electrodes 120B,
Since the mode of elastic deformation at the time of mounting is isotropic, the effect that it is easy to ensure the ease of elastic deformation can be obtained even if the interval between the protruding electrodes 120B is narrowed. For the same reason, the gap between the adjacent protrusions 124a formed on the valley 124v of the protrusion 124 is on the line connecting the tops 120p of the protruding electrodes 120B as shown in the plan view of FIG. Although not shown, it is configured to open from the planar position of the horizontal line in FIG. 1) to the direction (upper and lower sides in FIG. 1) orthogonal to the arrangement direction of the protrusions 124a, and therefore the insulating resin 128 at the time of mounting. The fluidity between the projecting electrodes 120B becomes good, the insulating resin 128 is smoothly discharged from the region between the projecting electrodes 120B, and the conductive contact state between the projecting electrode 120B and the conductors 117 and 118 can be reliably obtained. is there.

特に、図示例では突出部124aは半球状に構成されているので、頂部120p近傍の
突出部表面の傾斜が少なく、したがって、加圧によって大きな導電接触面積を確実に得る
ことができるとともに、突出部124aの弾性変形形状も安定するので、確実な導電接続
状態を再現性よく実現できる。なお、このような効果は突出部124aを半球状に構成す
る場合だけでなく、半回転楕円体状などの種々の凸曲面状の表面を有する突出部を形成し
た場合にも得られる。なお、このような形状による効果を得るには基本的に突出部124
aの頂部のみが上記形状となっていれば充分である。
In particular, in the illustrated example, the protrusion 124a is formed in a hemispherical shape, so that the inclination of the surface of the protrusion near the top 120p is small, and thus a large conductive contact area can be reliably obtained by pressing, and the protrusion Since the elastic deformation shape of 124a is also stable, a reliable conductive connection state can be realized with good reproducibility. Such an effect can be obtained not only when the protruding portion 124a is formed in a hemispherical shape but also when a protruding portion having various convex curved surfaces such as a semi-spheroid shape is formed. In order to obtain the effect of such a shape, the protruding portion 124 is basically used.
It is sufficient that only the top of a has the above shape.

図4に示すように、実装前においては突起電極120Bの頂部120pと突出体124
の谷部124vとの間には高低差δhが存在する。この高低差δhは大きいほど実装時に
おける突起電極120Bの弾性変形が容易になるとともに絶縁樹脂128の流動性も良好
となるが、突出部124aが同じ形状であれば、高低差δhを大きくするほど突起電極1
20Bの配列ピッチも大きくなる。したがって、高低差δhは、例えば突出部124の高
さhの1/3〜2/3の範囲内であることが好ましく、同高さhの半分程度が最も好まし
い。
As shown in FIG. 4, before mounting, the top 120p of the protruding electrode 120B and the protruding body 124 are provided.
There is a height difference δh between the valley portion 124v and the valley portion 124v. The larger the height difference δh, the easier the elastic deformation of the protruding electrode 120B during mounting and the better the fluidity of the insulating resin 128. However, if the protrusion 124a has the same shape, the height difference δh increases. Projection electrode 1
The arrangement pitch of 20B is also increased. Therefore, the height difference δh is preferably in the range of 1/3 to 2/3 of the height h of the protrusion 124, for example, and is most preferably about half of the height h.

図5に示すように、実装後においては、突起電極120Bが導電体117、118に対
して加圧されるので、突出部124aが押しつぶされるように弾性変形し、頂部120p
は平坦化される。その結果、突起電極120Bの頂部120pと突出体124の谷部12
4vとの高低差δh′は上記高低差δhより小さくなる。実装後の高低差δh′としては
、例えば、高さhの3/12〜7/12の範囲であることが好ましい。
As shown in FIG. 5, after the mounting, the protruding electrode 120B is pressed against the conductors 117 and 118, so that the protruding portion 124a is elastically deformed so as to be crushed, and the top portion 120p.
Is flattened. As a result, the top portion 120p of the protruding electrode 120B and the valley portion 12 of the protruding body 124 are obtained.
The height difference δh ′ from 4v is smaller than the height difference δh. The height difference δh ′ after mounting is preferably in the range of 3/12 to 7/12 of the height h, for example.

次に、図6を参照して本発明に係る突起電極120Bの製造方法について説明する。本
実施形態では、図6(a)に示すように、最初に、半導体基板等の基板121を有する基
体上に感光性樹脂からなる樹脂層124Aをスピンコーティング法、印刷法等により形成
する。次に、樹脂層124Aに図示しないマスクを用いて露光を行い、現像処理、焼成処
理等によってパターニングし、図6(b)に示すように突出体124を形成する。このパ
ターニング工程では、突出体124を従来と同様に島状、或いは、枠状に残すだけでなく
、複数の突出部124aをそれらの周縁部124bが接続される態様で一体に連結した形
状に成形する。
Next, a method for manufacturing the protruding electrode 120B according to the present invention will be described with reference to FIG. In this embodiment, as shown in FIG. 6A, first, a resin layer 124A made of a photosensitive resin is formed on a substrate having a substrate 121 such as a semiconductor substrate by a spin coating method, a printing method, or the like. Next, the resin layer 124A is exposed using a mask (not shown), and is patterned by development processing, baking processing, or the like to form the protrusions 124 as shown in FIG. 6B. In this patterning process, the protrusions 124 are not only left in the shape of an island or a frame as in the prior art, but also formed into a shape in which a plurality of protrusions 124a are integrally connected in such a manner that their peripheral edges 124b are connected. To do.

マスク等による露光パターンは、複数の突出部124aに対応する複数の部分が連結さ
れた形状としてもよく、或いは、複数の突出部124aに対応する複数の部分が離散的に
設けられた形状としてもよい。特に、後者の場合にはプロキシミティ露光等によって露光
パターンを意図的にぼやけさせることにより、露光強度を適宜の分布とすることで、突出
部124aを山状に形成することが可能である。また、ハーフトーンマスクを用いて露光
強度を調整することで、突出部124aの山形状を形成することもできる。
The exposure pattern using a mask or the like may have a shape in which a plurality of portions corresponding to the plurality of protrusions 124a are connected, or a shape in which a plurality of portions corresponding to the plurality of protrusions 124a are provided discretely. Good. In particular, in the latter case, it is possible to form the protrusions 124a in a mountain shape by intentionally blurring the exposure pattern by proximity exposure or the like so that the exposure intensity is appropriately distributed. Further, by adjusting the exposure intensity using a halftone mask, the mountain shape of the protruding portion 124a can be formed.

上記のパターニング工程は、上述のフォトリソグラフィ法に限らず、他の方法で行うこ
ともできる。例えば、樹脂層124Aにインプリント法(転写法)を適用し、樹脂層12
4Aを型によって上記の形状に成形することも可能である。また、樹脂層124Aを突出
部124aに対応する位置にのみ残すように構成し、その後、残存した樹脂層を加熱等に
よって軟化・流動させることにより、突出部124aの周縁部同士が連結されるようにし
てもよい。
The patterning step is not limited to the photolithography method described above, and can be performed by other methods. For example, an imprint method (transfer method) is applied to the resin layer 124A, and the resin layer 12
It is also possible to form 4A into the above shape by a mold. Further, the resin layer 124A is configured to remain only at a position corresponding to the protruding portion 124a, and then the remaining resin layer is softened / flowed by heating or the like so that the peripheral portions of the protruding portion 124a are connected to each other. It may be.

上記のパターニング工程は、基本的に従来のパターニング工程と同じ方法で同じ工程時
間で処理することができる。すなわち、露光パターンを変えたり、型形状を変えたりする
だけでよく、工程そのものを変更する必要がない。
The above patterning process can be basically performed in the same process time as the conventional patterning process. That is, it is only necessary to change the exposure pattern or the mold shape, and it is not necessary to change the process itself.

次に、図6(c)に示すように、上記の突出体124の各突出部124a上にそれぞれ
電極層125を形成する。これらの電極層125は、金属層その他の導電層を蒸着法、ス
パッタリング法、CVD法、無電解めっき法等の適宜の成膜法により成膜した後に、マス
ク等を用いて選択的に導電層の不要部分を除去(パターニング)することによって形成で
きる。電極層125は少なくとも突出部124aの頂部上に配置されるように形成される
。通常、電極層125は基板121上の図1に示すパッド122に導電接続されるように
構成される。
Next, as illustrated in FIG. 6C, the electrode layer 125 is formed on each protrusion 124 a of the protrusion 124. These electrode layers 125 are formed by depositing a metal layer or other conductive layer by an appropriate film forming method such as an evaporation method, a sputtering method, a CVD method, or an electroless plating method, and then selectively using a mask or the like. It can be formed by removing (patterning) unnecessary portions. The electrode layer 125 is formed so as to be disposed on at least the top of the protruding portion 124a. In general, the electrode layer 125 is configured to be conductively connected to the pad 122 shown in FIG.

本実施形態では、上記のように突出部124aと電極層125とからなる突起電極12
0Bが一体の突出体124に対して複数設けられる。そして、これらの突起電極120B
を備えた電子部品(例えば半導体装置)を図3に示すように基板111上に実装すればよ
い。
In the present embodiment, the protruding electrode 12 composed of the protruding portion 124a and the electrode layer 125 as described above.
A plurality of 0Bs are provided for the integral protrusions 124. These protruding electrodes 120B
An electronic component (for example, a semiconductor device) including the above may be mounted on the substrate 111 as shown in FIG.

ただし、この場合、突出体124における突出部124a間の谷部124vが充分に深
く形成されておらず、実装時において各突出部124aが弾性変形しにくく、また、突出
部124a間において谷部124v上の間隙が不十分で絶縁樹脂128の流動不足によっ
て導電接触状態が悪くなる可能性もある。そこで、上記の工程の後に、突出体124にお
ける突出部124a間の領域の一部又は全部を除去する工程を設け、図6(d)に示すよ
うに、上記領域に凹溝124uを形成してもよい。この工程は、例えば、酸素ガスのプラ
ズマを基板121上に照射することによるプラズマ処理、その他のドライエッチング法や
ウエットエッチング法などによって実施する。特に、酸素プラズマ処理では、樹脂材料の
エッチングができる一方で金属材料のエッチング速度が低いために充分な選択比を確保で
きることから、マスクなしで(電極層125をマスクとして)処理を施すことが可能であ
る。
However, in this case, the valleys 124v between the protrusions 124a in the protrusions 124 are not formed sufficiently deep, and the protrusions 124a are not easily elastically deformed during mounting, and the valleys 124v between the protrusions 124a. There is a possibility that the conductive contact state may be deteriorated due to insufficient flow of the insulating resin 128 due to insufficient upper gap. Therefore, after the above step, a step of removing a part or all of the region between the protruding portions 124a in the protruding body 124 is provided, and a concave groove 124u is formed in the above region as shown in FIG. Also good. This step is performed by, for example, plasma processing by irradiating the substrate 121 with oxygen gas plasma, other dry etching methods, wet etching methods, or the like. In particular, in the oxygen plasma treatment, a resin material can be etched while a metal material has a low etching rate, so that a sufficient selection ratio can be secured. Therefore, the treatment can be performed without a mask (using the electrode layer 125 as a mask). It is.

この場合には、凹溝124uを設ける工程が別途必要になるが、もともと突出部124
a間には谷部124vが設けられているために、従来方法に比べて当該工程の処理時間を
大幅に低減することができる。
In this case, a step of providing the concave groove 124u is required separately, but originally the protruding portion 124 is provided.
Since the trough part 124v is provided between a, the processing time of the said process can be reduced significantly compared with the conventional method.

図7乃至図9は、本実施形態の突出体の各種の例の概略斜視図(a)及び概略平面図(
b)を示すものである。図7に示す突出体124は先に説明した形状を有するものであり
、複数の半球状の突出部124aが一体に連結され、それらの突出部124aが一列で直
線状に並んだ例を示す。また、図8に示す突出部124′は、複数の半円柱状の突出部1
24a′が直線状に並んだ例を示す。さらに、図9に示す突出体124″は、複数の半球
状の突出部124a″が一体に連結され、それらの突出部124a′が千鳥状に配列され
た例を示す。なお、複数の突出部の配列態様は上記のような一列に配列されたものだけに
限られず、例えば、二列、或いはそれ以上の列となるように配列されたものであってもよ
い。また、直線状に限らず、曲線状に配列されていても構わない。
7 to 9 are schematic perspective views (a) and schematic plan views of various examples of the projecting body according to this embodiment.
b). The protrusion 124 shown in FIG. 7 has the shape described above, and shows an example in which a plurality of hemispherical protrusions 124a are integrally connected, and these protrusions 124a are arranged in a straight line. Further, the protrusion 124 ′ shown in FIG. 8 has a plurality of semi-cylindrical protrusions 1.
An example in which 24a 'is arranged in a straight line is shown. Furthermore, the protrusion 124 ″ shown in FIG. 9 shows an example in which a plurality of hemispherical protrusions 124a ″ are integrally connected and the protrusions 124a ′ are arranged in a staggered manner. In addition, the arrangement | sequence aspect of a some protrusion part is not restricted only to what was arranged in the above 1 line, For example, you may arrange | position so that it may become a 2 or more row | line | column. Moreover, it may be arranged not only in a linear shape but also in a curved shape.

図10は、上記の突起電極120Bを備えた電子部品(半導体装置)120を基板11
1上に実装してなる実装構造体、或いは、電気光学装置の構成例を示す概略斜視図である
。電気光学装置100は、電気光学パネル110と、電子部品120とを有している。電
気光学パネル110は、一対のガラスや合成樹脂等よりなる基板111と112とをシー
ル材113で所定間隔(3〜10μm程度)を有するように貼り合わせ、基板111と1
12の間に電気光学物質が配置されてなるものである。図示例では、基板111と112
の間のシール材113で閉鎖された領域に液晶114が封入された液晶表示体が構成され
ている。
FIG. 10 shows an electronic component (semiconductor device) 120 having the protruding electrode 120B described above.
1 is a schematic perspective view showing a configuration example of a mounting structure formed on 1 or an electro-optical device. The electro-optical device 100 includes an electro-optical panel 110 and an electronic component 120. The electro-optical panel 110 is formed by bonding a pair of substrates 111 and 112 made of glass, synthetic resin, or the like with a sealant 113 so as to have a predetermined interval (about 3 to 10 μm).
The electro-optic material is disposed between the two. In the illustrated example, the substrates 111 and 112 are shown.
A liquid crystal display body in which a liquid crystal 114 is sealed in a region closed by a sealing material 113 between them is configured.

基板111と112の内面上には図示しない駆動電極が形成され、これらの駆動電極に
よって液晶114に所定の電界を印加することで、画素ごとに光変調特性を制御できるよ
うに構成されている。画素はシール材113の内側に設定された表示領域内に例えばマト
リクス状に配列されている。基板111及び112の外面上には偏光板115、116が
配置(貼着)されている。
Drive electrodes (not shown) are formed on the inner surfaces of the substrates 111 and 112, and the light modulation characteristics can be controlled for each pixel by applying a predetermined electric field to the liquid crystal 114 by these drive electrodes. The pixels are arranged in a matrix, for example, in a display area set inside the sealing material 113. Polarizing plates 115 and 116 are disposed (attached) on the outer surfaces of the substrates 111 and 112.

基板111には、基板112と対向する対向部111aと、基板112の外形よりも外
側へ張り出してなる張り出し部111bとが設けられ、対向部111aには上記の画素を
構成する駆動電極が配列形成され、張り出し部111bには、上記の駆動電極に対して直
接若しくは間接的に接続された複数の駆動配線117が引き出されている。また、張り出
し部111bの端部には、複数の入力配線118が形成されている。
The substrate 111 is provided with a facing portion 111a that faces the substrate 112 and a protruding portion 111b that protrudes outward from the outer shape of the substrate 112, and the driving electrodes constituting the above-described pixels are arrayed on the facing portion 111a. In addition, a plurality of drive wirings 117 that are directly or indirectly connected to the drive electrodes are drawn out from the projecting portion 111b. A plurality of input wirings 118 are formed at the end of the overhanging portion 111b.

上記電子部品120は、先に説明した複数の突起電極120Bを表面(図10における
下面)上に形成したものであり、典型的には、半導体基板の能動面上に複数の突起電極1
20Bを配列させてなる半導体装置(半導体チップ)である。電子部品120は張り出し
部111bの表面上に実装され、各突起電極120Bは上記の駆動配線117及び入力配
線118にそれぞれ導電接続されている。
The electronic component 120 is formed by forming the plurality of protruding electrodes 120B described above on the surface (the lower surface in FIG. 10). Typically, the plurality of protruding electrodes 1 are formed on the active surface of the semiconductor substrate.
This is a semiconductor device (semiconductor chip) in which 20B are arranged. The electronic component 120 is mounted on the surface of the projecting portion 111b, and each protruding electrode 120B is conductively connected to the drive wiring 117 and the input wiring 118, respectively.

入力配線118は張り出し部111bの端部に図示しない入力端子を有し、これらの入
力端子は、張り出し部111bの端部上に実装されたフレキシブル配線基板131の配線
パターンに導電接続されている。
The input wiring 118 has an input terminal (not shown) at the end of the overhang 111b, and these input terminals are conductively connected to the wiring pattern of the flexible wiring board 131 mounted on the end of the overhang 111b.

本実施形態では、上記の電子部品120が上述のように狭ピッチで形成された複数の突
起電極120Bを備えているため、電気光学パネル110が高精細化されることによって
多数の駆動配線117を有するものとなっても、短絡不良や導通不良のない電気信頼性の
高い電気光学装置100(実装構造体)を構成することができる。
In the present embodiment, since the electronic component 120 includes the plurality of protruding electrodes 120B formed at a narrow pitch as described above, the high-definition electro-optical panel 110 increases the number of drive wirings 117. Even if it has, it is possible to configure the electro-optical device 100 (mounting structure) with high electrical reliability without short circuit failure or conduction failure.

次に、図11及び図12を参照して、本発明に係る電子機器の例について説明する。図
11は、本発明に係る電子機器の一実施形態であるノート型パーソナルコンピュータを示
している。このパーソナルコンピュータ200は、複数の操作ボタン201aや他の操作
装置201bを備えた本体部201と、この本体部201に接続され、表示画面202a
を備えた表示部202とを備えている。図示例の場合、本体部201と表示部202は開
閉可能に構成されている。表示部202の内部には上述の液晶装置100が内蔵されてお
り、表示画面202aに所望の表示画像が表示されるようになっている。この場合、パー
ソナルコンピュータ200の内部には、上記液晶装置100を制御する表示制御回路が設
けられる。この表示制御回路は、液晶装置100に対して映像信号その他の入力データや
所定の制御信号を送り、その動作態様を決定するように構成されている。
Next, an example of an electronic apparatus according to the present invention will be described with reference to FIGS. FIG. 11 shows a notebook personal computer which is an embodiment of the electronic apparatus according to the present invention. The personal computer 200 is connected to a main body 201 having a plurality of operation buttons 201a and other operation devices 201b, and the main body 201, and a display screen 202a.
And a display unit 202 including In the case of the illustrated example, the main body unit 201 and the display unit 202 are configured to be openable and closable. The above-described liquid crystal device 100 is built in the display unit 202, and a desired display image is displayed on the display screen 202a. In this case, a display control circuit for controlling the liquid crystal device 100 is provided inside the personal computer 200. This display control circuit is configured to send a video signal and other input data and a predetermined control signal to the liquid crystal device 100 to determine its operation mode.

図12は、本発明に係る電子機器の他の実施形態である携帯電話機を示している。ここ
に示す携帯電話機300は、複数の操作ボタン301a,301b及び送話口などを備え
た操作部301と、表示画面302aや受話口などを備えた表示部302とを有し、表示
部302の内部に上記の液晶装置100が組み込まれてなる。そして表示部302の表示
画面302aにおいて液晶装置100により形成された表示画像を視認することができる
ようになっている。この場合、携帯電話機300の内部には、上記液晶装置100を制御
する表示制御回路が設けられる。この表示制御回路は、液晶装置100に対して映像信号
その他の入力データや所定の制御信号を送り、その動作態様を決定するように構成されて
いる。
FIG. 12 shows a mobile phone which is another embodiment of the electronic apparatus according to the invention. A cellular phone 300 shown here includes an operation unit 301 including a plurality of operation buttons 301a and 301b and a mouthpiece, and a display unit 302 including a display screen 302a and a mouthpiece. The liquid crystal device 100 is incorporated inside. The display image formed by the liquid crystal device 100 can be viewed on the display screen 302a of the display unit 302. In this case, a display control circuit for controlling the liquid crystal device 100 is provided in the mobile phone 300. This display control circuit is configured to send a video signal and other input data and a predetermined control signal to the liquid crystal device 100 to determine its operation mode.

尚、本発明の実装構造体、半導体装置、及び、電気光学装置、並びに、突起電極等の製
造方法は、上述の図示例にのみ限定されるものではなく、本発明の要旨を逸脱しない範囲
内において種々変更を加え得ることは勿論である。例えば、上記各実施形態の電気光学装
置は液晶表示体を構成する電気光学パネルを含むものとして説明したが、本発明では、液
晶表示体に限らず、有機エレクトロルミネッセンス装置、電気泳動表示体、プラズマディ
スプレイパネル等の各種の電気光学パネルを用いることができる。
Note that the mounting structure, the semiconductor device, the electro-optical device, and the manufacturing method of the protruding electrode according to the present invention are not limited to the illustrated examples described above, and do not depart from the gist of the present invention. Of course, various changes can be made. For example, the electro-optical device according to each of the above embodiments has been described as including an electro-optical panel that constitutes a liquid crystal display. However, in the present invention, not only the liquid crystal display but also an organic electroluminescence device, an electrophoretic display, and plasma. Various electro-optical panels such as a display panel can be used.

実施形態の突起電極の構造を示す概略平面図。The schematic plan view which shows the structure of the protruding electrode of embodiment. 実施形態の突起電極の構造を示す断面矢視図。Sectional arrow figure which shows the structure of the protruding electrode of embodiment. 実施形態の突起電極と導電体の実装構造を示す概略縦断面図。The schematic longitudinal cross-sectional view which shows the mounting structure of the bump electrode and conductor of embodiment. 実施形態の実装前の突起電極の構造を示す拡大断面図。The expanded sectional view which shows the structure of the protruding electrode before mounting of embodiment. 実施形態の実装後の実装構造を示す拡大断面図。The expanded sectional view showing the mounting structure after mounting of an embodiment. 実施形態の突起電極の製造方法を示す工程断面図。Process sectional drawing which shows the manufacturing method of the bump electrode of embodiment. 実施形態の突出体の形状を示す斜視図(a)及び平面図(b)。The perspective view (a) and top view (b) which show the shape of the protrusion of embodiment. 実施形態の突出体の別の形状例を示す斜視図(a)及び平面図(b)。The perspective view (a) and top view (b) which show another example of the shape of the protrusion of embodiment. 実施形態の突出体のさらに別の形状例を示す斜視図(a)及び平面図(b)。The perspective view (a) and top view (b) which show another example of a shape of the protrusion of embodiment. 実施形態の電気光学装置の全体構成を模式的に示す概略斜視図。1 is a schematic perspective view schematically showing an overall configuration of an electro-optical device according to an embodiment. 実施形態の電子機器の一例を示す概略斜視図。1 is a schematic perspective view illustrating an example of an electronic apparatus according to an embodiment. 実施形態の電子機器の他の例を示す概略斜視図。FIG. 6 is a schematic perspective view illustrating another example of the electronic apparatus of the embodiment. 従来の突起電極を形成してなる半導体装置の一部を示す部分平面図(a)及び(b)。Partial top view (a) and (b) which shows a part of semiconductor device which forms the conventional protruding electrode. 従来の突起電極の構造を示す概略縦断面図。The schematic longitudinal cross-sectional view which shows the structure of the conventional protruding electrode. 従来の突起電極を備えた半導体装置の実装構造を示す拡大部分断面図。The expanded partial sectional view which shows the mounting structure of the semiconductor device provided with the conventional protruding electrode.

符号の説明Explanation of symbols

100…電気光学装置、110…電気光学パネル、111…基板、120…電子部品(半
導体装置)、120B…突起電極、120p…頂部、121…基板、122…パッド、1
23…絶縁膜、124…突出体、124a…突出部、124b…周縁部(接続部)、12
4v…谷部、125…電極層
DESCRIPTION OF SYMBOLS 100 ... Electro-optical device, 110 ... Electro-optical panel, 111 ... Board | substrate, 120 ... Electronic component (semiconductor device), 120B ... Projection electrode, 120p ... Top part, 121 ... Substrate, 122 ... Pad, 1
23 ... Insulating film, 124 ... Projection, 124a ... Projection, 124b ... Periphery (connection), 12
4v ... Valley, 125 ... Electrode layer

Claims (11)

弾性部材により形成された突出体及び該突出体上に形成された電極層を有する突起電極
を備えた半導体装置において、
前記突出体は、複数の山状の突出部をそれらの周縁部の一部が接続された態様で一体に
連結した形状を有し、
複数の前記突出部にそれぞれ前記電極層が形成されることにより複数の前記突起電極が
設けられてなり、
隣接してなる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出部にそ
れぞれ設けられてなる前記電極層の間に配置されてなることを特徴とする半導体装置。
In a semiconductor device provided with a protruding electrode having a protrusion formed by an elastic member and an electrode layer formed on the protrusion,
The projecting body has a shape in which a plurality of mountain-shaped projecting parts are integrally coupled in a form in which a part of their peripheral parts is connected,
A plurality of the protruding electrodes are provided by forming the electrode layer on each of the plurality of protruding portions,
The semiconductor device according to claim 1, wherein the connecting portion formed by connecting the adjacent projecting portions is disposed between the electrode layers respectively provided on the adjacent projecting portions.
前記突出部は凸曲面状の頂部を有することを特徴とする請求項1に記載の半導体装置。   The semiconductor device according to claim 1, wherein the protrusion has a convex curved top. 前記突出部は直線状に配列されていることを特徴とする請求項1又は2に記載の半導体
装置。
The semiconductor device according to claim 1, wherein the protrusions are arranged in a straight line.
前記突出部は千鳥状に配列されていることを特徴とする請求項1又は2に記載の半導体
装置。
The semiconductor device according to claim 1, wherein the projecting portions are arranged in a staggered pattern.
弾性部材により形成された突出体及び該突出体上に形成された電極層を有する突起電極
を備えた電子部品と、前記突起電極に導電接触した導電体を備えた基板と、前記電子部品
と前記基板とを接着する絶縁樹脂とを具備する実装構造体において、
前記突出体は、複数の山状の突出部をそれらの周縁部の一部が接続された態様で一体に
連結した形状を有し、
複数の前記突出部にそれぞれ前記電極層が形成されることにより複数の前記突起電極が
設けられてなり、
隣接してなる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出部にそ
れぞれ設けられてなる前記電極層の間に配置されてなることを特徴とする実装構造体。
An electronic component including a protruding body formed of an elastic member and a protruding electrode having an electrode layer formed on the protruding body, a substrate including a conductor in conductive contact with the protruding electrode, the electronic component, and the electronic component In a mounting structure comprising an insulating resin that adheres to a substrate,
The projecting body has a shape in which a plurality of mountain-shaped projecting parts are integrally coupled in a form in which a part of their peripheral parts is connected,
A plurality of the protruding electrodes are provided by forming the electrode layer on each of the plurality of protruding portions,
A mounting structure in which adjacent projecting portions are connected to each other are arranged between the electrode layers respectively provided on the adjacent projecting portions.
弾性部材により形成された突出体及び該突出体上に形成された電極層を有する突起電極
を備えた電子部品と、電気光学物質が配されてなる基板を有し、当該基板上に前記突起電
極に導電接触した導電体を備えた電気光学パネルと、前記電子部品と前記基板とを接着す
る絶縁樹脂とを具備する電気光学装置において、
前記突出体は、複数の山状の突出部をそれらの周縁部の一部が接続された態様で一体に
連結した形状を有し、
複数の前記突出部にそれぞれ前記電極層が形成されることにより複数の前記突起電極が
設けられてなり、
隣接してなる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出部にそ
れぞれ設けられてなる前記電極層の間に配置されてなることを特徴とする電気光学装置。
An electronic component having a protruding body formed of an elastic member and a protruding electrode having an electrode layer formed on the protruding body, and a substrate on which an electro-optic material is disposed, and the protruding electrode is provided on the substrate. In an electro-optical device comprising: an electro-optical panel including a conductor in conductive contact; and an insulating resin that bonds the electronic component and the substrate.
The projecting body has a shape in which a plurality of mountain-shaped projecting parts are integrally coupled in a form in which a part of their peripheral parts is connected,
A plurality of the protruding electrodes are provided by forming the electrode layer on each of the plurality of protruding portions,
An electro-optical device, wherein a connecting portion formed by connecting adjacent projecting portions is disposed between the electrode layers respectively provided on the adjacent projecting portions.
弾性部材により形成された突出体及び該突出体上に形成された電極層を有する突起電極
を備えた半導体装置の製造方法において、
複数の突出部をそれらの周縁部の一部が接続された態様で一体に連結した形状の前記突
出体を形成する突出体形成工程と、
複数の前記突出部上にそれぞれ前記電極層を形成する電極層形成工程と、
を具備し、
隣接してなる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出部にそ
れぞれ設けられてなる前記電極層の間に配置されてなることを特徴とする半導体装置の製
造方法。
In a method of manufacturing a semiconductor device including a protruding body formed of an elastic member and a protruding electrode having an electrode layer formed on the protruding body,
A projecting body forming step of forming the projecting body having a shape in which a plurality of projecting sections are integrally coupled in a manner in which a part of their peripheral edge portions is connected;
An electrode layer forming step of forming the electrode layer on each of the plurality of protrusions;
Comprising
A connection part formed by connecting the adjacent projecting parts is disposed between the electrode layers provided on the adjacent projecting parts, respectively. .
前記電極層形成工程の後に、前記突出体における前記突出部の間の領域の一部若しくは
全部を除去する工程をさらに具備することを特徴とする請求項7に記載の半導体装置の製
造方法。
The method for manufacturing a semiconductor device according to claim 7, further comprising a step of removing a part or all of a region between the protruding portions of the protruding body after the electrode layer forming step.
弾性部材により形成された突出体及び該突出体上に形成された電極層を有する突起電極
を備えた電子部品と、前記突起電極に導電接触した導電体を備えた基板と、前記電子部品
と前記基板とを接着する絶縁樹脂とを具備する実装構造体の製造方法において、
前記電子部品に複数の突出部をそれらの周縁部の一部が接続された態様で一体に連結し
た形状の前記突出体を形成する突出体形成工程と、
複数の前記突出部上にそれぞれ前記電極層を形成する電極層形成工程と、
前記突起電極が前記導電体に導電接続されるように前記電子部品を前記基板上に実装す
る電子部品実装工程と、
を具備し、
隣接してなる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出部にそ
れぞれ設けられてなる前記電極層の間に配置されてなることを特徴とする実装構造体の製
造方法。
An electronic component including a protruding body formed of an elastic member and a protruding electrode having an electrode layer formed on the protruding body, a substrate including a conductor in conductive contact with the protruding electrode, the electronic component, and the electronic component In a manufacturing method of a mounting structure comprising an insulating resin for bonding a substrate,
A projecting body forming step of forming the projecting body having a shape in which a plurality of projecting sections are integrally connected to the electronic component in a mode in which a part of the peripheral edge portions is connected;
An electrode layer forming step of forming the electrode layer on each of the plurality of protrusions;
An electronic component mounting step of mounting the electronic component on the substrate so that the protruding electrode is conductively connected to the conductor;
Comprising
The connection structure formed by connecting the adjacent projecting portions is disposed between the electrode layers respectively provided on the adjacent projecting portions. Method.
弾性部材により形成された突出体及び該突出体上に形成された電極層を有する突起電極
を備えた電子部品と、電気光学物質が配されてなる基板を有し、当該基板上に前記突起電
極に導電接触した導電体を備えた電気光学パネルと、前記電子部品と前記基板とを接着す
る絶縁樹脂とを具備する電気光学装置の製造方法において、
前記電子部品に複数の突出部をそれらの周縁部の一部が接続された態様で一体に連結し
た形状の前記突出体を形成する突出体形成工程と、
複数の前記突出部上にそれぞれ前記電極層を形成する電極層形成工程と、
前記突起電極が前記導電体に導電接続されるように前記電子部品を前記基板上に実装す
る電子部品実装工程と、
を具備し、
隣接してなる前記突出部同士が接続されてなる接続部は、前記隣接してなる突出部にそ
れぞれ設けられてなる前記電極層の間に配置されてなすることを特徴とする電気光学装置
の製造方法。
An electronic component having a protruding body formed of an elastic member and a protruding electrode having an electrode layer formed on the protruding body, and a substrate on which an electro-optic material is disposed, and the protruding electrode is provided on the substrate. In an electro-optical device manufacturing method, comprising: an electro-optical panel including a conductor in conductive contact; and an insulating resin that bonds the electronic component and the substrate.
A projecting body forming step of forming the projecting body having a shape in which a plurality of projecting sections are integrally connected to the electronic component in a mode in which a part of the peripheral edge portions is connected;
An electrode layer forming step of forming the electrode layer on each of the plurality of protrusions;
An electronic component mounting step of mounting the electronic component on the substrate so that the protruding electrode is conductively connected to the conductor;
Comprising
An electro-optical device comprising: a connecting portion formed by connecting adjacent projecting portions disposed between the electrode layers respectively provided on the adjacent projecting portions; Production method.
請求項6に記載の電気光学装置を搭載してなる電子機器。
An electronic apparatus comprising the electro-optical device according to claim 6.
JP2005362794A 2005-12-16 2005-12-16 Semiconductor device, mounting structure, electrooptical device, method of manufacturing semiconductor device, method of manufacturing mounting structure, method of manufacturing electrooptical device, and electronic equipment Withdrawn JP2007165744A (en)

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