JP2007165458A - Lead frame and manufacturing method therefor - Google Patents

Lead frame and manufacturing method therefor Download PDF

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Publication number
JP2007165458A
JP2007165458A JP2005357732A JP2005357732A JP2007165458A JP 2007165458 A JP2007165458 A JP 2007165458A JP 2005357732 A JP2005357732 A JP 2005357732A JP 2005357732 A JP2005357732 A JP 2005357732A JP 2007165458 A JP2007165458 A JP 2007165458A
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Prior art keywords
lead frame
opening
tab
heat sink
radiating plate
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JP2005357732A
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JP2007165458A5 (en
Inventor
Tsunaichi Tawara
綱一 田原
Asako Kamiyasu
朝子 上安
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2005357732A priority Critical patent/JP2007165458A/en
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Publication of JP2007165458A5 publication Critical patent/JP2007165458A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly reliable lead frame for semiconductor device ensuring superior heat radiation, and also to provide a manufacturing method therefor. <P>SOLUTION: The lead frame is covered with a circumferential edge; and a heat radiating plate is deposited with pressure to an aperture by providing the aperture which has completed the burring process to the area, except for an external frame of a tab within the tab of a lead frame, inserting the heat radiating plate formed in the shape of a step into this aperture; and by applying mechanical pressure to the circumferential edge of the upper surface of the heat-radiating plate using a punch or the like. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、リードフレームとその製造方法およびそれを用いた半導体装置に関し、特に半導体素子から発生する熱を効率よく放熱する技術に関する。   The present invention relates to a lead frame, a manufacturing method thereof, and a semiconductor device using the lead frame, and more particularly to a technique for efficiently radiating heat generated from a semiconductor element.

近年、高出力や高周波数の要求から半導体装置の中に実装される集積回路（以下ＩＣと称す）や電界効果トランジスタ（以下ＦＥＴと称す）や発光ダイオード（以下ＬＥＤと称す）などの半導体素子から数ワット程度の熱が発生する様になってきた。こうした半導体素子から発生する熱を効率良く放熱する手段として、リードフレームフレームに放熱板を備えた半導体装置があった（例えば、特許文献１参照）。   In recent years, semiconductor devices such as integrated circuits (hereinafter referred to as ICs), field effect transistors (hereinafter referred to as FETs), and light emitting diodes (hereinafter referred to as LEDs) mounted in semiconductor devices due to demands for high output and high frequency. A few watts of heat has been generated. As means for efficiently dissipating heat generated from such a semiconductor element, there has been a semiconductor device having a heat sink on a lead frame frame (see, for example, Patent Document 1).

図４は、前記特許文献１に記載された従来の半導体装置を示した断面図である。図４において、１０１は半導体装置であり、インナーリード１０２およびアウターリード１０３を備えたリードフレーム１０４はその中央部にタブ１０５が形成されている。タブ１０５のほぼ中央部に開口部１０６が設けられている。リードフレーム１０３の開口部１０６には底面から放熱板１０７が挿入され、放熱板１０７は、外縁部に機械的圧力を加えることによりリードフレーム１０４に圧着されて、放熱板１０７とリードフレーム１０４と嵌合し、放熱板１０７上面に半導体素子１０８が搭載されている。半導体素子１０８はインナーリード１０２と導電性ワイヤ１０９を介して接続し、インナーリード１０２、放熱板１０７、半導体素子１０８、導電性ワイヤ１０９とを絶縁性樹脂１１０により樹脂封止していた。
特開平１０−１２７８８号公報 FIG. 4 is a cross-sectional view showing a conventional semiconductor device described in Patent Document 1. In FIG. In FIG. 4, reference numeral 101 denotes a semiconductor device, and a lead frame 104 having an inner lead 102 and an outer lead 103 has a tab 105 formed at the center thereof. An opening 106 is provided at substantially the center of the tab 105. A heat radiating plate 107 is inserted into the opening 106 of the lead frame 103 from the bottom surface. The heat radiating plate 107 is pressed against the lead frame 104 by applying mechanical pressure to the outer edge portion, and the heat radiating plate 107 and the lead frame 104 are fitted. The semiconductor element 108 is mounted on the upper surface of the heat sink 107. The semiconductor element 108 is connected to the inner lead 102 via the conductive wire 109, and the inner lead 102, the heat sink 107, the semiconductor element 108, and the conductive wire 109 are sealed with an insulating resin 110.
Japanese Patent Laid-Open No. 10-12788

しかしながら、前記従来の構成では、放熱板１０７に機械的圧力を加えることによりリードフレーム１０４に圧着する際、リードフレーム１０４の圧着部に応力がかかるため、リードフレーム１０４に変形が生じるという問題点があった。   However, in the conventional configuration, when the pressure is applied to the lead frame 104 by applying mechanical pressure to the heat radiating plate 107, stress is applied to the crimping portion of the lead frame 104, so that the lead frame 104 is deformed. there were.

また、放熱板１０７をリードフレーム１０４の開口部１０６に挿入する際、リードフレーム１０４の開口部１０６の挿入部に破断面が形成されているため挿入性が悪く、外部ガイドなどを設ける必要があった。   Further, when the heat sink 107 is inserted into the opening 106 of the lead frame 104, the insertion section of the opening 106 of the lead frame 104 has a broken surface, so that the insertion property is poor and an external guide or the like must be provided. It was.

また、放熱板１０７をリードフレーム１０４の開口部１０６に挿入する際、放熱板１０７とリードフレーム１０４との接触面積が小さいため、放熱板１０７の位置精度を保つことが困難である。   Further, when the heat radiating plate 107 is inserted into the opening 106 of the lead frame 104, it is difficult to maintain the positional accuracy of the heat radiating plate 107 because the contact area between the heat radiating plate 107 and the lead frame 104 is small.

本発明は、前記従来の課題を解決するものであり、放熱効果が良好で信頼性にも優れたリードフレームとその製造方法およびそれを用いた半導体装置を提供することを目的とする。   SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and an object thereof is to provide a lead frame having a good heat dissipation effect and excellent reliability, a manufacturing method thereof, and a semiconductor device using the lead frame.

前記従来の課題を解決するために、本発明のリードフレームは、フレーム部と、フレーム部から内方に延出したリードおよびタブとからなり、タブの領域に放熱板が挿入される開口部が形成され、開口部に鍔部が形成され、鍔部が形成された開口部に放熱板の素子搭載部を上面とし圧着されたものである。   In order to solve the above-described conventional problems, the lead frame of the present invention includes a frame portion, leads and tabs extending inward from the frame portion, and an opening portion into which a heat sink is inserted in the tab region. In this case, a flange is formed in the opening, and the opening in which the flange is formed is pressure-bonded with the element mounting portion of the heat sink as the upper surface.

これによれば、リードフレームの鍔部に放熱板を圧着することにより一体とし、タブに直接、圧着の際の応力が加わらずリードフレームの変形を防ぐことが可能となる。   According to this, it is possible to prevent the lead frame from being deformed by applying a heat radiation plate to the flange portion of the lead frame so as to be integrated, and applying stress to the tab directly.

本発明のリードフレームの製造方法は、フレーム部と、フレーム部から内方に延出したリードおよびタブとを形成する工程と、タブの領域で上下に貫通した開口部を形成する工程と、開口部にバーリング加工を施し上下方向の何れか一方に開口後部より延在した鍔部を形成する工程と、開口部に放熱板を挿入し前記タブと放熱板とを装着する工程とを備えたものである。   The lead frame manufacturing method of the present invention includes a step of forming a frame portion, a lead and a tab extending inwardly from the frame portion, a step of forming an opening vertically penetrating in the region of the tab, and an opening And a step of forming a flange extending from the rear portion of the opening in one of the vertical directions and a step of inserting the heat sink into the opening and mounting the tab and the heat sink. It is.

本発明によれば、リードフレームにバーリング加工を施すことにより、開口部の放熱板挿入部に必然的にフィレットと称されるＲが生じるため、これが放熱板を挿入する際の挿入ガイドとなる。このため外部ガイドを必要とせず放熱板を開口部に挿入することができる。また、放熱板がリードフレームの鍔部と面で接するため接触面積が大きく、放熱性の向上が図れるとともに位置精度に優れるリードフレームを実現することができる。   According to the present invention, by performing burring on the lead frame, an R called a fillet is inevitably generated in the heat sink insertion portion of the opening, and this serves as an insertion guide when the heat sink is inserted. For this reason, a heat sink can be inserted in an opening part, without requiring an external guide. In addition, since the heat radiating plate is in contact with the flange portion of the lead frame at the surface, the contact area is large, and it is possible to realize a lead frame that can improve heat dissipation and is excellent in positional accuracy.

以下本発明の実施の形態について、図面を参照しながら説明する。   Embodiments of the present invention will be described below with reference to the drawings.

（実施の形態１）
図１（ａ）は、本発明の実施の形態１におけるリードフレームを示した正面図であり、図１（ｂ）は図１（ａ）のＡ−Ａ’線に沿った断面図である。 (Embodiment 1)
FIG. 1A is a front view showing a lead frame according to Embodiment 1 of the present invention, and FIG. 1B is a cross-sectional view taken along the line AA ′ of FIG.

図１（ａ）、（ｂ）において、１は金属薄板材からなるリードフレームであり、２はインナーリードであり、３はインナーリード２と導通接続されたアウターリードであり、４はアウターリード３を相互に固定するためのタイバーである。   1A and 1B, 1 is a lead frame made of a thin metal plate, 2 is an inner lead, 3 is an outer lead electrically connected to the inner lead 2, and 4 is an outer lead 3. It is a tie bar for fixing to each other.

なお、インナーリード２とアウターリード３は後述する樹脂封止により内包される側をインナーリード２、露出される側をアウターリード３とされることが多い。また、タイバー４は樹脂封止された後に分離除去される各リードを固定する補助的な手段である。   In many cases, the inner lead 2 and the outer lead 3 are the inner leads 2 and the outer leads 3 are encapsulated by resin sealing described later. The tie bar 4 is an auxiliary means for fixing each lead that is separated and removed after being sealed with resin.

５はリードフレーム１のほぼ中央部に設けられたタブであり、タブ５の中央部には開口部６が形成され、開口部６には銅、銅合金、アルミニウムやセラミックなどの熱導性に優れた素材からなる放熱板７が挿入され装着されている。   Reference numeral 5 denotes a tab provided substantially at the center of the lead frame 1. An opening 6 is formed in the center of the tab 5, and the opening 6 has a thermal conductivity such as copper, copper alloy, aluminum, or ceramic. A heat sink 7 made of an excellent material is inserted and attached.

このとき、タブ５に設けられた開口部６にはバーリングと称されるプレス加工が施され鍔部１２が形成されている。   At this time, the opening 6 provided in the tab 5 is subjected to press work called burring to form a flange 12.

これによれば、放熱板７とタブ５の接触面積が大きいため、後述する半導体素子で発生した熱が、放熱板７及びタブの２つの経路を介して外部に効率よく放熱される。   According to this, since the contact area between the heat radiating plate 7 and the tab 5 is large, heat generated in a semiconductor element to be described later is efficiently radiated to the outside through the two paths of the heat radiating plate 7 and the tab.

さらに、タブ５をディプレスによりリードフレーム１より下方に押し下げられている。   Further, the tab 5 is pressed downward from the lead frame 1 by pressing.

これによれば、後述するワイヤーボンディング性を向上させることができる。   According to this, the wire bonding property mentioned later can be improved.

（実施の形態２）
図２（ａ）〜（ｅ）は、本発明の実施の形態２におけるリードフレームの製造工程フローに沿った断面図である。 (Embodiment 2)
2A to 2E are cross-sectional views along the manufacturing process flow of the lead frame in Embodiment 2 of the present invention.

図２（ａ）〜（ｅ）において、図１（ａ）、（ｂ）と同じ構成要素については同じ符号を用い、説明を省略する。   2A to 2E, the same components as those in FIGS. 1A and 1B are denoted by the same reference numerals, and description thereof is omitted.

図２（ａ）〜（ｅ）において、金属薄板材（図示せず）をプレス加工またはエッチング加工により、インナーリード２、アウターリード３、タイバー４、タブ５、開口部６を形成する（図２（ａ））。このとき、開口部６は後ほど挿入される放熱板７の形状に合わせて丸形や四角形に形成されている。   2A to 2E, an inner lead 2, an outer lead 3, a tie bar 4, a tab 5, and an opening 6 are formed by pressing or etching a thin metal plate material (not shown) (FIG. 2). (A)). At this time, the opening 6 is formed in a round shape or a square shape according to the shape of the heat sink 7 to be inserted later.

プレス加工により開口部６にバーリング加工を施す（図２（ｂ））。このとき、開口部６にはバーリング加工により上下方向の何れか一方に開口部６より延在した鍔部１２が形成される。また、鍔部１２は垂直、傾斜など適宜選択可能である。これによれば、後ほど挿入される放熱板７の挿入性向上、密着性向上に優れる。   The opening 6 is subjected to burring by press working (FIG. 2B). At this time, a flange 12 extending from the opening 6 is formed in the opening 6 in one of the vertical directions by burring. Further, the collar portion 12 can be selected as appropriate, such as vertical and inclined. According to this, it is excellent in the insertability improvement and adhesiveness improvement of the heat sink 7 inserted later.

タブ５をディプレスによりリードフレーム１より下方に押し下げる（図２（ｃ））。このとき、タブ５後ほど挿入される放熱板上面とリードフレーム１とが略同一平面となる様ディプレスされる。これによれば、ワイヤーボンディング性に優れる。   The tab 5 is pressed downward from the lead frame 1 by pressing (FIG. 2C). At this time, the upper surface of the heat sink inserted after the tab 5 and the lead frame 1 are depressed so as to be substantially in the same plane. According to this, it is excellent in wire bonding property.

そして、少なくとも段差部をひとつ備えたＴ字形に形成した放熱板７を開口部６に挿入し装着する（図２（ｄ）、（ｅ））。   And the heat sink 7 formed in the T shape provided with at least one level | step-difference part is inserted and installed in the opening part 6 (FIG.2 (d), (e)).

このとき、放熱板７はパンチにより上面に叩き加工を施し、タブ５を放熱板７で狭圧してかしめ付けしている。   At this time, the heat radiating plate 7 is struck on the upper surface by a punch, and the tab 5 is squeezed by the heat radiating plate 7 and caulked.

さらに、放熱板７を挿入しかしめ付けする工程を図３（ａ）、（ｂ）を用いて詳細に説明する。   Further, the process of inserting or fitting the heat sink 7 will be described in detail with reference to FIGS.

図３（ａ）において、かしめ付けを行う金型は断面視でハの字形状に形成したパンチ３１と平坦部備えたダイ３２とからなる。   In FIG. 3A, a die for caulking includes a punch 31 formed in a cross-sectional shape in a cross-sectional view and a die 32 having a flat portion.

放熱板７の下面にダイ３２を当接し、上面にパンチ３１のハの字形状に形成した傾斜面で放熱板７の上面周縁部に圧力を加え狭圧してかしめ付けている。   The die 32 is brought into contact with the lower surface of the heat radiating plate 7 and the upper surface of the heat radiating plate 7 is narrowed and caulked by applying pressure to the peripheral surface of the upper surface of the heat radiating plate 7 with an inclined surface formed in the shape of a square of the punch 31 on the upper surface.

これによれば、パンチ３１に形成した傾斜面により、狭圧の際に加圧力がタブの中心にかかり放熱板７の位置精度が高くなる。   According to this, due to the inclined surface formed in the punch 31, the applied pressure is applied to the center of the tab when the pressure is narrow, and the positional accuracy of the heat sink 7 is increased.

放熱板７の周縁部をパンチ３１で狭圧することで放熱板７の周縁部からタブ５に放熱板７の一部の肉が逃げ鍔部１２を押さえつける。このようにして放熱板７とタブ５がかしめ付けされる。   By narrowing the peripheral edge of the heat radiating plate 7 with the punch 31, some meat of the heat radiating plate 7 presses against the flange 12 from the peripheral edge of the heat radiating plate 7 to the tab 5. Thus, the heat sink 7 and the tab 5 are caulked.

以上のように本発明は、リードフレームのタブ内部にタブの外周枠を残してバーリング加工が施された開口部を設け、開口部に放熱板７を挿入し、放熱板７の上面からパンチなどで機械的圧力を加えてバーリング加工部上部に放熱板７を圧着する。このようにバーリング加工を施すことにより、圧着の際のリードフレームに加わる応力を低減させ、リードフレームに変形を生じることなく放熱板７とリードフレームとを一体とすることが可能となる。   As described above, according to the present invention, an opening that is subjected to burring processing is provided in the tab of the lead frame, leaving the outer peripheral frame of the tab, the heat sink 7 is inserted into the opening, and punching or the like is performed from the upper surface of the heat sink 7. Then, a mechanical pressure is applied to press the heat sink 7 on the upper part of the burring portion. By performing burring in this manner, the stress applied to the lead frame during crimping can be reduced, and the heat radiating plate 7 and the lead frame can be integrated without causing deformation of the lead frame.

また、リードフレームにバーリング加工を施す際において、開口部の放熱板７が挿入される部分には必然的にフレットと称されるＲが生じるため、これが放熱板７を挿入する際の挿入ガイドとなり、このため外部ガイドを必要としない。これによりコストの低減を実現できる。   In addition, when performing burring on the lead frame, an R called a fret is inevitably generated in the portion of the opening where the heat radiating plate 7 is inserted, so this serves as an insertion guide when the heat radiating plate 7 is inserted. Because of this, no external guide is required. Thereby, cost reduction can be realized.

さらに、バーリング加工が施された開口部に放熱板７を挿入する際において、放熱板７とリードフレームとの接触面積が大きくなるため、放熱板７のぐらつきが規制され、開口部のリードフレームに垂直な方向に対する放熱板７の位置精度が高くなる。   Further, when the heat sink 7 is inserted into the opening subjected to the burring process, the contact area between the heat sink 7 and the lead frame is increased. The positional accuracy of the heat sink 7 with respect to the vertical direction is increased.

さらに、放熱板７とリードフレームとの接触面積が大きいため、放熱性の向上が図れる。   Furthermore, since the contact area between the heat sink 7 and the lead frame is large, the heat dissipation can be improved.

リードフレームに放熱板を圧着することにより一体とし、タブに直接、圧着の際の応力が加わらずリードフレームの変形防止として有用であり、特に半導体装置用リードフレームに適している。   The heat radiation plate is integrated with the lead frame by pressure bonding, and it is useful for preventing deformation of the lead frame because the stress is not applied directly to the tab, and is particularly suitable for a lead frame for semiconductor devices.

（ａ）本発明の実施の形態１におけるリードフレームの正面図、（ｂ）図１（ａ）のＡ−Ａ’線に沿った断面図(A) Front view of lead frame in Embodiment 1 of the present invention, (b) Cross-sectional view taken along line A-A 'in FIG. 1 (a) 本発明の実施の形態２におけるリードフレームの製造工程フローに沿った断面図Sectional drawing along the manufacturing-process flow of the lead frame in Embodiment 2 of this invention 図２の放熱板装着工程の詳細な工程フローに沿った断面図Sectional drawing along the detailed process flow of the heat sink mounting process of FIG. 従来の半導体装置の断面図Sectional view of a conventional semiconductor device

符号の説明Explanation of symbols

１ リードフレーム
２ インナーリード
３ アウターリード
４ タイバー
５ タブ
６ 開口部
７ 放熱板
１０ 絶縁性樹脂
１１ 放熱板上面
１２ 鍔部
２２ バーリング加工前の開口部
２３ バーリング加工が施された開口部
２４ 放熱板周縁部
２５ バーリング加工部上部
３１ パンチ
３２ ダイ
１０１ 半導体装置
１０２ インナーリード
１０３ アウターリード
１０４ リードフレーム
１０５ タブ
１０６ 開口部
１０７ 放熱板
１０８ 半導体素子
１０９ 導電性ワイヤ
１１０ 絶縁性樹脂


DESCRIPTION OF SYMBOLS 1 Lead frame 2 Inner lead 3 Outer lead 4 Tie bar 5 Tab 6 Opening part 7 Heat sink 10 Insulating resin 11 Heat sink upper surface 12 Gutter part 22 Opening part 23 before burring process Opening part 24 with burring process 24 Part 25 Burring processing part upper part 31 Punch 32 Die 101 Semiconductor device 102 Inner lead 103 Outer lead 104 Lead frame 105 Tab 106 Opening part 107 Heat sink 108 Semiconductor element 109 Conductive wire 110 Insulating resin


Claims (2)

フレーム部と、前記フレーム部から内方に延出したリードおよびタブとからなり、前記タブの領域に放熱板が挿入される開口部が形成され、前記開口部に鍔部が形成され、前記鍔部が形成された前記開口部に前記放熱板の素子搭載部を上面とし圧着されたことを特徴とする半導体装置用リードフレーム。   The frame portion includes leads and tabs extending inwardly from the frame portion, an opening portion into which a heat sink is inserted is formed in the region of the tab, and a flange portion is formed in the opening portion. A lead frame for a semiconductor device, wherein an element mounting portion of the heat radiating plate is used as an upper surface and is crimped to the opening in which the portion is formed. フレーム部と、前記フレーム部から内方に延出したリードおよびタブとを形成する工程と、前記タブの領域で上下に貫通した開口部を形成する工程と、前記開口部にバーリング加工を施し上下方向の何れか一方に前記開口後部より延在した鍔部を形成する工程と、前記開口部に放熱板を挿入し前記タブと前記放熱板とを装着する工程とを備えたことを特徴とする半導体装置用リードフレームの製造方法。
A step of forming a frame portion, a lead and a tab extending inwardly from the frame portion, a step of forming an opening penetrating vertically in the region of the tab, and a burring process applied to the opening portion A step of forming a flange extending from the rear portion of the opening in any one of directions; and a step of inserting a heat sink into the opening and mounting the tab and the heat sink. Manufacturing method of lead frame for semiconductor device.
JP2005357732A 2005-12-12 2005-12-12 Lead frame and manufacturing method therefor Pending JP2007165458A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2608257A1 (en) * 2010-08-20 2013-06-26 Panasonic Corporation Semiconductor device and method for manufacturing same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293551A (en) * 1988-05-20 1989-11-27 Mitsubishi Electric Corp Semiconductor device
JPH02222166A (en) * 1989-02-23 1990-09-04 Toppan Printing Co Ltd Lead frame, heat sink and semiconductor device
JPH1012788A (en) * 1996-06-26 1998-01-16 Matsushita Electron Corp Semiconductor device, manufacture thereof and lead frame for the semiconductor device
JP2004296954A (en) * 2003-03-28 2004-10-21 Mitsubishi Electric Corp Lead frame substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01293551A (en) * 1988-05-20 1989-11-27 Mitsubishi Electric Corp Semiconductor device
JPH02222166A (en) * 1989-02-23 1990-09-04 Toppan Printing Co Ltd Lead frame, heat sink and semiconductor device
JPH1012788A (en) * 1996-06-26 1998-01-16 Matsushita Electron Corp Semiconductor device, manufacture thereof and lead frame for the semiconductor device
JP2004296954A (en) * 2003-03-28 2004-10-21 Mitsubishi Electric Corp Lead frame substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2608257A1 (en) * 2010-08-20 2013-06-26 Panasonic Corporation Semiconductor device and method for manufacturing same
EP2608257A4 (en) * 2010-08-20 2014-10-01 Panasonic Corp Semiconductor device and method for manufacturing same

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