JP2007163159A - Probe-cleaning method and probe-cleaning device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cleaning method and a cleaning device for a probe capable of reducing damages to the probe at dust cleaning of the probe. <P>SOLUTION: The method of the probe-cleaning comprises the charging of the probe tip cleaning member 10, and by making relative approaching of the probe tip cleaning member 10 to the probe 21 of the probe card 20, adhered dust (a) adhered to the tip part of the probe 21 of the probe card 20, is removed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe cleaning method and a probe cleaning apparatus for removing dust and foreign matters adhering to a tip portion of a probe.

  In the wafer test, mechanical contact between the probe of the probe card and the electrode of the wafer pad, solder bump, solder ball or the like destroys the probe and / or a part of the electrode and generates powder dust. . The powder dust adheres to the tip of the probe (particularly, a portion near 100 μm from the tip of the probe) to form attached dust. The adhering dust may be deposited and fixed on the tip of the probe to be fixed dust.

  The attached dust obstructs the recognition of the tip position of the probe before the test through the CCD camera of the prober used for the wafer test, and causes the prober to automatically stop. Further, when the attached dust adheres to adjacent probes, the attached dust becomes a conductive member, which causes an erroneous measurement of the wafer test. On the other hand, the fixed dust may become an insulator due to oxidation or the like. In this case, the adhering dust obstructs electrical continuity between the tip of the probe and the electrode of the wafer and increases its resistance value, which causes erroneous measurement of the wafer test.

  For this reason, the attached dust and fixed dust are removed by mounting a cleaning member on a wafer chuck or a cleaning stage of the prober and mechanically bringing the probe into contact with the cleaning member.

  The cleaning member includes a rubber elastic body and a resin material (first cleaning member), a flat high-precision hard member such as a ceramic plate having a surface roughness (second cleaning member), both And the like (third cleaning member).

  The first cleaning member can remove the attached dust by causing the cleaning member to press or penetrate the probe. The second cleaning member can remove the fixed dust by overdriving the probe on the surface thereof. That is, after the probe is pressed or passed through the first cleaning member, the probe is overdriven on the second cleaning member to remove the attached dust and fixed dust.

  The third cleaning member presses the probe against the rubber elastic body or resin material in the upper layer, and overdrives the probe on the planar high-precision hard member in the lower layer, thereby removing the attached dust and fixed dust. It can be removed at once (see Patent Document 1).

JP 2003-100817 A

  In recent years, a probe having a low mechanical strength is being used to reduce the damage to the wafer at the time of contact and to cope with the miniaturization of the electrodes accompanying the multilayering of the wafer.

  However, in the case of cleaning the probe using the first and second cleaning members, the probe must be pressed against or pierced to the first cleaning member. There is a problem that damage to the probe is increased. In addition, since the second cleaning member is composed of a planar high-precision hard member having a surface roughness, there is also a problem that damage to the probe during removal of fixed dust increases.

  On the other hand, the cleaning of the probe using the third cleaning member also has both problems because the first and second cleaning members are stacked one above the other.

  The present invention was devised in view of the above circumstances, and its main object is to provide a probe cleaning method and a probe cleaning apparatus capable of reducing damage to the probe during dust removal. There is to do.

  In order to solve the above-described problems, the probe cleaning method of the present invention is characterized in that dust attached to the probe is removed by bringing a charging member charged with static electricity closer to the probe. It is said.

  The probe cleaning apparatus of the present invention is characterized by comprising a charging member, a charging means for charging the charging member with static electricity, and a moving means for moving the charging means closer to the probe.

  According to the probe cleaning method of the present invention, when a charging member charged with static electricity is brought relatively close to the probe, the static electricity of the charging member is charged to the probe and dust attached to the probe. At this time, the dust is polarized or polarized with the charging member, and electrostatic attractive force or electrostatic repulsive force is generated therebetween. When electrostatic attraction occurs between the dust and the charging member, the dust is separated from the probe by the electrostatic attraction and adheres to the charging member. On the other hand, when an electrostatic repulsive force is generated between the dust and the charging member, the dust is separated from the probe by the electrostatic repulsive force and repeatedly collides with the probe and other dust. Thereafter, the dust falls on the charging member due to its own weight. Since dust attached to the probe can be removed without mechanical contact in this way, damage to the probe at the time of cleaning can be reduced as compared with the conventional example, and the mechanical strength is low. It can correspond to a probe.

  When the probe cleaning apparatus of the present invention is used, the same effects as the probe cleaning method can be obtained.

  A probe cleaning method according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing a process for removing adhering dust from a cleaning member according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a process for removing adhering dust and fixed dust from the cleaning member, and FIG. It is a block diagram of the cleaning device concerning an embodiment.

  First, the cleaning member 10 (charging member) used in the probe cleaning method according to the embodiment of the present invention will be described. This cleaning member 10 (see FIG. 1 or FIG. 2) is made of an elastic sheet made of a material having adhesiveness or tackiness and having an electrostatic tolerance of 0.1 fF to 0.1 μF, graphite (carbon), Abrasive grains such as fine particles having a new Mohs hardness of 1 to 15 from talc to diamond are mixed. Specifically, a rubber elastic resin such as silicone resin, polyurethane resin, or Teflon rubber mixed with the abrasive grains is used.

  The cleaning member 10 is a hard member that is difficult to damage the probe 21 when the probe 21 of the probe card 20 is pressed, stabbed, or slid on the surface when removing the fixed dust b described later. Have Specifically, it has the hardness of HDA0 to HDD100.

  This cleaning member 10 is attached to the cleaning device 100 shown in FIG. 3 and removes the adhering dust a and the adhering adhering dust b adhering to the tip of the probe 21 of the probe card 20 (near 100 μm from the tip). Used for.

  Here, the adhering dust a is generated when the probe 21 and / or a part of the electrode of the wafer are destroyed due to mechanical contact between the probe 21 and a wafer electrode (not shown) during the wafer test. Powder dust, the size of which is 0.001 to several hundreds of μm. The fixed dust b is a dust that adheres to the tip of the probe 21 and adheres to it. The fixed dust b may become an insulator due to oxidation or the like.

  The cleaning apparatus 100 is a prober used for performing a wafer test using the probe card 20 with a function of cleaning the tip of the probe 21 of the probe card 20 using the cleaning member 10.

  The cleaning device 100 is provided above the inspection position, and is provided with an attachment portion 110 to which the probe card 20 is attached, a movable base 120, and the movable base 120, and a wafer or a cleaning member 10 (that is, a charging member). Is mounted on the movable table 120, the cleaning stage 140 on which the cleaning member 10 is set, and the CCD camera which is provided on the movable table 120 and images the tip position of the probe 21 of the probe card 20. 150, a moving means 160 for moving the movable base 120 from the loading position to the inspection position (cleaning position), the inspection position (cleaning position) to the unloading position, a charging means 170 for charging the cleaning member 10 with static electricity, and the operation of each part The control part 180 which controls this is provided.

  The chuck 130 is independently fixed to a holder (not shown) of the movable base 120. The chuck 130 can move up and down, and the wafer or the cleaning member 10 is automatically carried in and out. The chuck 130 is a so-called hot chuck, and has a function of heating the mounted wafer or the cleaning member 10 to −40 ° to 150 °. The temperature of the chuck 130 during the wafer test is usually set to 85 °. The cleaning stage 140 and the CCD camera 150 can also be moved up and down. The cleaning stage 140 does not have a heating function like the chuck 130, and its temperature is the same as the temperature in the cleaning device 100. The chuck 130 and the cleaning stage 140 have the same mounting surface of the cleaning member 10.

  The charging unit 170 may be a mechanical unit that charges the cleaning member 10 with static electricity by rubbing with a brush, brush, roll, blade, or the like, an electrical unit that charges the cleaning member 10 with static electricity by an ionizer or discharge, or ultraviolet light. Optical means for charging the cleaning member 10 with static electricity by exposure or the like is used.

  The control unit 180 is a computer, and a wafer test program is recorded in its internal memory. In this program, the first cleaning process for removing the attached dust a using the cleaning member 10 mounted on the chuck 130, and the attached dust a and the fixed dust b using the cleaning member 10 mounted on the chuck 130 are removed. A second cleaning step to remove, a third cleaning step to remove the attached dust a using the cleaning member 10 set on the cleaning stage 140, and an attached dust using the cleaning member 10 set on the cleaning stage 140 a fourth cleaning step of removing a and fixed dust b. The user of the cleaning device 100 can appropriately select and set which of these cleaning processes or a plurality of processes is used.

  Hereinafter, the cleaning method of the probe 21 of the probe card 20 by the cleaning device 100 will be described in detail. Here, it is assumed that the first to fourth cleaning steps are set to be performed at a predetermined timing in the wafer test inline. First, the probe card 20 is set in the attachment part 110.

  Then, the power of the cleaning apparatus 100 is turned on, and the control unit 180 causes the wafer test program to be processed. Then, the wafer or the cleaning member 10 is carried into the chuck 130 by the chuck 130 on the movable table 120 located at the carry-in position (at this time, the wafer or the cleaning member 10 is mounted on the chuck 130). The cleaning member 10 is set by the user on a predetermined cleaning stage 140 on the movable table 120.

  At the same time, the charging unit 170 is operated to charge the cleaning member 10 located at the carry-in position with static electricity. As a result, the cleaning member 10 is charged with static electricity having a potential of 1 mV to 1000 V. And the moving means 160 is operated and the movable stand 120 is conveyed from a carrying-in position to an inspection position.

  When the movable table 120 on which the wafer is mounted on the chuck 130 is positioned at the inspection position, the CCD camera 150 is operated to recognize the position of the tip position of the probe 21 of the probe card 20. Based on the recognition result, the chuck 130 is operated, the probe card 20 and the wafer are brought relatively close to each other, and the probe 21 of the probe card 20 is brought into contact with the electrode of the wafer. Thereby, a wafer test is performed. Thereafter, the chuck 130 is operated to relatively separate the probe card 20 and the wafer. Then, the moving means 160 is operated, and the movable table 120 on which the wafer is set is unloaded from the inspection position to the unloading position. When the movable table 120 is located at the unloading position, the wafer is unloaded by the chuck 130.

  When the movable base 120 with the cleaning member 10 mounted on the chuck 130 is positioned at the inspection position, either the first or second cleaning process is performed based on the contents of the program.

  When performing the first cleaning process, the CCD camera 150 is operated to recognize the position of the tip position of the probe 21 of the probe card 20, and the chuck 130 is operated based on the recognition result, and the cleaning member 10, the probe 21, Make them relatively close. As shown in FIG. 1, when the tip of the probe 21 enters a region (electrostatic field region) affected by static electricity of the cleaning member 10, the static electricity of the cleaning member 10 causes the probe 21 and attached dust attached to the probe 21. a is charged. Then, the cleaning member 10 and the adhering dust a are polarized or polarized, and an electrostatic attractive force or an electrostatic repulsive force is generated therebetween.

  When an electrostatic attractive force is generated between the cleaning member 10 and the attached dust a, the attached dust a is separated from the distal end portion of the probe 21 by the electrostatic attractive force and adhered or adhered to the cleaning member 10. When an electrostatic repulsive force is generated between the cleaning member 10 and the attached dust a, the attached dust a is separated from the tip of the probe 21 by the electrostatic repulsive force, and the tip of the probe 21 and other attached dust a Repeat the collision. Thereafter, the adhering dust a falls by its own weight and is adhered or adhered to the cleaning member 10. In this way, the attached dust a is removed from the tip of the probe 21. Thereafter, the chuck 130 is operated to relatively separate the cleaning member 10 and the probe 21. Then, the moving means 160 is operated, and the movable table 120 on which the cleaning member 10 is set is unloaded from the inspection position to the unloading position. When the movable table 120 is located at the carry-out position, the cleaning member 10 is carried out by the chuck 130.

  When the second cleaning process is performed, the attached dust a is removed by operating the chuck 130 and relatively bringing the cleaning member 10 and the probe 21 closer to each other as in the first cleaning process. Then, the chuck 130 is operated to bring the cleaning member 10 and the probe 21 closer to each other as shown in FIG. 2 so that the probe 21 is pressed against or inserted into the cleaning member 10. Or slide it on. As a result, the tip of the probe 21 is polished by the abrasive grains mixed in the cleaning member 10, and the fixed dust b fixed to the tip of the probe 21 is removed. Thereafter, the chuck 130 is operated to relatively separate the cleaning member 10 and the probe 21. Then, the moving means 160 is operated, and the movable table 120 on which the cleaning member 10 is set is unloaded from the inspection position to the unloading position. When the movable table 120 is located at the carry-out position, the cleaning member 10 is carried out by the chuck 130.

  When the movable stage 120 with the cleaning member 10 set on the cleaning stage 140 is located at the inspection position, the wafer test is performed on the wafer mounted on the chuck 130 on the movable stage 120 as described above, and then the program is executed. On the basis of the contents, either the third or fourth cleaning process is performed. Note that the third cleaning process is the same as the first cleaning process except that the cleaning stage 140 operates instead of the chuck 130. The fourth cleaning process is the same as the second cleaning process except that the cleaning stage 140 operates instead of the chuck 130. Therefore, the description of the third and fourth cleaning steps is omitted. In addition, the replacement of the cleaning member 10 on the cleaning stage 140 is performed by the user.

  After the cleaning, the probe 21 is charged with weak static electricity. However, the probe 21 is connected to the ground terminal, and the probe card having the probe 21 has a gap between the ground layer and the electrodes. Since some devices have a surge element, it does not affect subsequent wafer tests.

  In the case of such a cleaning member 10, the adhering dust a attached to the probe 21 due to static electricity of the cleaning member 10 can be removed only by bringing the probe 21 close to the cleaning member 10. For this reason, the damage to the probe 21 can be remarkably reduced as compared with the conventional example in which mechanical contact is indispensable. Further, since the cleaning member 10 has adhesiveness or adhesiveness and abrasive grains are mixed therein, the probe 21 is pressed against the cleaning member 10, pierced, or slid on the surface. Thus, the fixed dust b can be removed from the probe 21. The contact between the cleaning member 10 and the probe 21 during the removal of the fixed dust b can significantly reduce damage to the probe 21 as compared with the case where the conventional probe is overdriven on a flat high-precision hard member. it can. Therefore, it can be set as the cleaning member suitable for the fine probe 21 with low mechanical strength.

  Moreover, since the cleaning member 10 is made of an adhesive or sticky material, it is possible to adhere or stick the adhered dust a that has dropped onto the cleaning member 10. For this reason, it is possible to prevent the adhering dust a from adhering to the probe 21 again.

  The cleaning member 10 is a charging member that is charged or charged with static electricity, and any cleaning member 10 can be used as long as it can remove the adhered dust a on the probe 21 due to the influence of the static electricity. good. The shape of the cleaning member 10 can be designed according to the shape of the wafer and the shape of the mounting portion of the chuck 130. Of course, other shapes can be used instead of the shape of the wafer or the shape of the mounting portion of the chuck 130. Further, not only a sheet-like material but also a substrate or a rod-like electrode can be substituted.

  Further, the cleaning member 10 may not have adhesiveness, tackiness, and elasticity, and may not include abrasive grains. Examples of such a cleaning member 10 include hard resins such as epoxy resins or polyethylene resins, dielectric materials such as electrets such as Teflon (registered trademark) or polypropylene, and substances that generate ions such as precious gems and tourmaline. Can be used. In addition, as the cleaning member 10, when a material having a small electrostatic capacity is used as a base material, highly charged fine powders such as electrets, fine powders that generate ions such as precious gemstones and tourmaline are mixed. A thing etc. can also be used. When the abrasive particles are not mixed in the cleaning member 10, the probe 21 and the cleaning member 10 are brought relatively close to each other, the adhered dust a is removed by the static electricity, and then the second and third cleanings of the conventional example are performed. The fixed dust b is removed using a member. Even if the probe 21 is cleaned in this way, mechanical contact in the removal of the attached dust a is unnecessary, so that damage to the probe 21 during cleaning can be reduced as compared with the conventional example. Needless to say, the removal of the fixed dust b may be performed using other methods.

  Further, the cleaning member 10 and a flat high-precision hard member having a surface roughness are stacked one above the other, and the adhering dust a is removed by electrostatic attraction of the cleaning member 10, while the probe 21 is used by the flat high-precision hard member. The sticking dust b at the tip may be removed. In this case, although the damage to the probe 21 at the time of cleaning increases, the cleaning power can be improved. That is, the cleaning member 10 can be combined with other cleaning members according to the strength of the probe 21.

  The cleaning device 100 may have any design change as long as it includes a charging member, a charging unit that charges the charging member with static electricity, and a moving unit that moves the charging unit relatively close to the probe. Absent.

  Although the cleaning device 100 is a prober provided with the probe 21 cleaning function, the present invention is not limited to this. That is, it is possible to use an apparatus dedicated to cleaning the probe.

  When only the first and second cleaning steps are used, the cleaning stage 140 can be omitted. On the other hand, when only the third and fourth cleaning steps are used, the chuck 130 can be omitted when the cleaning device 100 is a cleaning-dedicated device. Further, the present invention is not limited to the cleaning stage 140 and the chuck 130, and any type that can hold the cleaning member 10 may be used.

  The charging unit 170 only needs to be able to charge the cleaning member 10 with static electricity, and the installation location, the timing of charging the static electricity, and the like are arbitrary.

  Although the cleaning method of the probe 21 using the cleaning device 100 has been described here, the attached dust a and the fixed dust b may be removed manually by using the cleaning member 10. In the first or third cleaning step, the probe 21 may be lightly brought into contact with the cleaning member 10.

  In the above-described embodiment, the weak static electricity charged on the probe 21 after cleaning does not affect the subsequent wafer test. However, if there is an effect, the probe 21 is cleaned after the cleaning is completed. The charge of the probe 21 and the cleaning member 10 may be discharged to the prober ground through the ground terminal connected to the probe in contact with the member 10.

It is sectional drawing which shows the removal process of the adhesion dust of the cleaning member which concerns on embodiment of this invention. It is sectional drawing which shows the removal process of the adhesion dust and the fixed dust of the cleaning member. It is a block diagram of the cleaning device concerning an embodiment of the invention.

Explanation of symbols

10 Cleaning member (Charging member)
20 Probe 100 Cleaning device 150 Moving means 160 Charging means

Claims (2)

  A method for cleaning a probe, characterized in that dust attached to the probe is removed by bringing a charging member charged with static electricity closer to the probe.   A probe cleaning apparatus comprising: a charging member; a charging unit that charges the charging member with static electricity; and a moving unit that moves the charging unit relatively close to the probe.

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