JP2007158465A - Piezoelectric device - Google Patents

Piezoelectric device Download PDF

Info

Publication number
JP2007158465A
JP2007158465A JP2005347143A JP2005347143A JP2007158465A JP 2007158465 A JP2007158465 A JP 2007158465A JP 2005347143 A JP2005347143 A JP 2005347143A JP 2005347143 A JP2005347143 A JP 2005347143A JP 2007158465 A JP2007158465 A JP 2007158465A
Authority
JP
Japan
Prior art keywords
piezoelectric
lid
space
vibration element
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005347143A
Other languages
Japanese (ja)
Other versions
JP4758210B2 (en
Inventor
Akira Miura
陽 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Crystal Device Corp
Original Assignee
Kyocera Crystal Device Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Crystal Device Corp filed Critical Kyocera Crystal Device Corp
Priority to JP2005347143A priority Critical patent/JP4758210B2/en
Publication of JP2007158465A publication Critical patent/JP2007158465A/en
Application granted granted Critical
Publication of JP4758210B2 publication Critical patent/JP4758210B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric device, the jitter characteristics of which are improved by shielding electromagnetic noises or the like that have infiltrated from the outside of the device. <P>SOLUTION: In the piezoelectric device, wherein at least a piezoelectric resonator element is mounted in a recessed space formed to the inside of a rectangular package, a metal-made lid of a rectangular flat plate shape is arranged to the top face of sidewall parts for surrounding the space of the package, in a form of covering the opening of the space, and the lid and a conductor layer, provided to the top face of the side wall parts are joined and fixed to each other so as to hermetically seal the piezoelectric resonator element in the space, the thickness of the lid is 150μm or larger and the thickness of the piezoelectric device is 2mm or smaller. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、携帯用通信機器等の電子機器に電子部品として用いられる、圧電振動子又は圧電発振器等の圧電デバイスに関するものである。   The present invention relates to a piezoelectric device such as a piezoelectric vibrator or a piezoelectric oscillator used as an electronic component in an electronic device such as a portable communication device.

以前より圧電素板の両主面に電極膜を形成した圧電振動素子を容器体内部に搭載した圧電振動子や、圧電振動子と発振回路とを同一の容器体内に搭載した圧電発振器や、あるいは、特定の周波数帯を分離する圧電フィルタ等の圧電デバイスが、携帯用通信機器や電子計算機等の電子機器に電子部品として多用されている。そして近年、表面実装に対応した形態の圧電デバイスが開発され、更に、搭載される電子機器の小型化に伴って、これらの圧電デバイスも小型化薄型化が進められている。   A piezoelectric vibrator in which a piezoelectric vibration element in which electrode films are formed on both main surfaces of the piezoelectric element plate is mounted inside the container body, a piezoelectric oscillator in which the piezoelectric vibrator and the oscillation circuit are mounted in the same container body, or Piezoelectric devices such as piezoelectric filters that separate specific frequency bands are often used as electronic components in electronic devices such as portable communication devices and electronic computers. In recent years, piezoelectric devices in a form corresponding to surface mounting have been developed. Further, along with the downsizing of electronic devices to be mounted, these piezoelectric devices are also being reduced in size and thickness.

従来の圧電デバイスとして、例えば圧電デバイスの一つである圧電発振器を図5に示す。即ち、圧電材料である水晶の矩形平板形状の素板の両主面に励振用電極が形成された圧電振動素子22と、この圧電振動素子22の励振用電極と電気的に接続して発振回路等の電子回路網を構成する電子部品23と、圧電振動素子22及び電子部品23を収容する容器体21とから成る圧電発振器において、容器体21は、圧電振動素子22のみを内部に収納する凹状の第1の空間部24と、電子部品23を内部に収納する凹状の第2の空間部25とを夫々独立して有しているものが知られている。   As a conventional piezoelectric device, for example, a piezoelectric oscillator which is one of piezoelectric devices is shown in FIG. That is, the piezoelectric vibration element 22 in which excitation electrodes are formed on both main surfaces of a rectangular plate-like element plate made of a piezoelectric material, which is a piezoelectric material, and an oscillation circuit electrically connected to the excitation electrode of the piezoelectric vibration element 22 In a piezoelectric oscillator comprising an electronic component 23 that constitutes an electronic circuit network such as a piezoelectric vibration element 22 and a container body 21 that houses the electronic component 23, the container body 21 has a concave shape that houses only the piezoelectric vibration element 22 therein. The first space portion 24 and the concave second space portion 25 in which the electronic component 23 is accommodated are independently known.

容器体21の外底面には、それぞれ電源電圧端子、グランド端子、発振出力端子、発振制御端子として機能する外部接続用電極端子26が形成されている。この容器体21の各空間部を囲繞する側壁部頂面に、すべての空間部の開口部を一体で覆う形態の蓋体27を配置し、蓋体27と側壁部頂面に形成された導体層とを接合固着し、少なくとも圧電振動素子22が内部に搭載されている第1の空間部24を気密封止してある。この蓋体27を容器体21の配線パターン等を介して外部接続用電極端子26のうちのグランド端子に接続させておけば、その使用時には蓋体27がアースされ、これにより電磁シールド機能が付与されることとなり、内部に搭載された圧電振動素子22等を外部からの不要な電気的作用(ノイズ等)から良好に保護するEMC効果を奏するものである。   External connection electrode terminals 26 functioning as a power supply voltage terminal, a ground terminal, an oscillation output terminal, and an oscillation control terminal are formed on the outer bottom surface of the container body 21. A lid 27 in a form that integrally covers the openings of all the space portions is disposed on the top surface of the side wall portion surrounding each space portion of the container body 21, and a conductor formed on the top surface of the lid body 27 and the side wall portion. The layers are bonded and fixed, and at least the first space 24 in which the piezoelectric vibration element 22 is mounted is hermetically sealed. If the lid body 27 is connected to the ground terminal of the external connection electrode terminals 26 via the wiring pattern of the container body 21 or the like, the lid body 27 is grounded during use, thereby providing an electromagnetic shielding function. As a result, the EMC effect can be obtained in which the piezoelectric vibration element 22 and the like mounted therein are well protected from unnecessary external electrical effects (noise, etc.).

尚、上述したような圧電デバイスの一つである圧電発振器については、下記の先行技術文献に開示がある。
特開1998−75120号公報
A piezoelectric oscillator which is one of the piezoelectric devices as described above is disclosed in the following prior art documents.
Japanese Patent Laid-Open No. 1998-75120

尚、出願人は、前記した先行技術文献情報で特定される先行技術文献以外には、本発明に関連する先行技術文献を本件出願時までに発見するに到らなかった。   In addition, the applicant did not come to discover prior art documents related to the present invention by the time of the filing of the application other than the prior art documents specified by the prior art document information described above.

しかし、圧電デバイスの小型化薄型化が進むにつれ、蓋体の薄型化及び蓋体と内部に搭載した圧電振動素子との距離が著しく接近してしまう場合がある。このような形態では、蓋体によるEMC効果が十分ではなくなり、容器体内に搭載された圧電振動素子又は電子素子に外来ノイズの影響による浮遊容量の不安定化が生じる。   However, as the piezoelectric device becomes smaller and thinner, the lid may become thinner and the distance between the lid and the piezoelectric vibration element mounted inside may become extremely close. In such a form, the EMC effect by the lid is not sufficient, and the stray capacitance becomes unstable due to the influence of external noise in the piezoelectric vibration element or electronic element mounted in the container.

例えば、圧電発振器の一つである電圧制御型圧電発振器(VCXO)では、制御回路後段に接続するPLL回路のジッタ特性を劣化させてしまうといった欠点があった。ジッタ特性が劣化すると、圧電デバイスは外部のPLL回路に接続、又は圧電デバイス内部にPLL回路を組み込んで、データ転送の際の基準信号源や、あるいは出力信号源として使用されるため、その発振周波数が乱れるとデータ転送がうまくいかず、ビットエラーが発生してしまうという欠点が生じる可能性があった。   For example, a voltage controlled piezoelectric oscillator (VCXO), which is one of the piezoelectric oscillators, has a drawback of deteriorating the jitter characteristics of a PLL circuit connected to a subsequent stage of the control circuit. When jitter characteristics deteriorate, the piezoelectric device is connected to an external PLL circuit, or incorporated in the piezoelectric device and used as a reference signal source or an output signal source for data transfer. If the data is disturbed, there is a possibility that data transfer is not successful and a bit error occurs.

本発明は上記欠点に鑑み案出されたもので、その目的は、外来ノイズの影響を低減及び遮蔽することにより、ジッタ特性を改善した圧電デバイスを提供することにある。   The present invention has been devised in view of the above disadvantages, and an object thereof is to provide a piezoelectric device having improved jitter characteristics by reducing and shielding the influence of external noise.

本発明の圧電デバイスの一形態としては、矩形状の容器体内部に形成された凹状の空間部内に、少なくとも圧電振動素子が搭載されており、この容器体の空間部を囲繞する側壁部の頂面には、この空間部の開口部を覆う形態で矩形平板状の金属製蓋体が配置されており、蓋体と側壁部の頂面に設けた導体層とを接合固着し、空間部内の圧電振動素子を気密封止している圧電デバイスにおいて、蓋体の厚みが150μm以上であり、且つデバイスとして厚みを2mm以下であることを特徴とするものである。   As one form of the piezoelectric device of the present invention, at least a piezoelectric vibration element is mounted in a concave space formed inside a rectangular container body, and the top of the side wall portion surrounding the space part of the container body is mounted. A rectangular flat plate-shaped metal lid is arranged on the surface so as to cover the opening of the space, and the lid and the conductor layer provided on the top surface of the side wall are bonded and fixed. In the piezoelectric device in which the piezoelectric vibration element is hermetically sealed, the lid body has a thickness of 150 μm or more, and the device has a thickness of 2 mm or less.

又、本発明の圧電デバイスの他の形態として、矩形状の容器体内部に形成された凹状の空間部内に、少なくとも圧電振動素子が搭載されており、この容器体の空間部を囲繞する側壁部の頂面には、この空間部の開口部を覆う形態で矩形平板状の金属製蓋体が配置されており、蓋体と側壁部の頂面に設けた導体層とを接合固着し、空間部内の圧電振動素子を気密封止している圧電デバイスにおいて、蓋体の空間部側の主面と、圧電振動素子の蓋体側主面に形成されている励振用電極との間隔が400μm以上であり、且つデバイスとしての厚みを2mm以下としたことを特徴とするものである。   As another embodiment of the piezoelectric device of the present invention, at least a piezoelectric vibration element is mounted in a concave space formed inside a rectangular container body, and a side wall portion surrounding the space portion of the container body A rectangular flat plate-shaped metal lid is arranged on the top surface of the space portion so as to cover the opening of the space portion, and the lid body and the conductor layer provided on the top surface of the side wall portion are bonded and fixed. In the piezoelectric device that hermetically seals the piezoelectric vibration element in the unit, the distance between the main surface on the space portion side of the lid and the excitation electrode formed on the main surface on the lid of the piezoelectric vibration element is 400 μm or more. And the thickness of the device is 2 mm or less.

更に、容器体には、2つ以上の空間部が形成されており、そのうちの少なくとも1つの空間部内に該圧電振動素子が搭載されていることを特徴とする上記記載の圧電デバイスでもある。   Furthermore, in the above-described piezoelectric device, two or more spaces are formed in the container body, and the piezoelectric vibration element is mounted in at least one of the spaces.

本発明の圧電デバイスによれば、圧電振動素子が搭載された容器体に形成された空間部の開口部の導体層と固着することによって容器体内の圧電振動素子を気密封止する蓋体の厚みが150μm以上であり、且つデバイスとして厚みを2mm以下にすることにより、デバイスの薄型化を維持した上で、グランド端子に接続される蓋体の電磁ノイズ遮断機能が電気的に安定して機能することで、蓋体と圧電振動素子の励振用電極との間隔にて発生する浮遊容量が変動することなく安定させることができるので、ジッタ特性が劣化することがなく、データ転送を確実に行うことが可能となる。   According to the piezoelectric device of the present invention, the thickness of the lid that hermetically seals the piezoelectric vibration element in the container body by being fixed to the conductor layer in the opening of the space formed in the container body on which the piezoelectric vibration element is mounted. Is 150 μm or more and the thickness of the device is 2 mm or less, so that the electromagnetic noise blocking function of the lid connected to the ground terminal functions stably stably while maintaining the thinness of the device. As a result, the stray capacitance generated at the gap between the lid and the excitation electrode of the piezoelectric vibration element can be stabilized without fluctuation, so that the jitter characteristics are not deteriorated and the data transfer is performed reliably. Is possible.

また、本発明の圧電デバイスによれば、前記蓋体と前記圧電振動素子の励振用電極との間隔が400μm以上であり、且つデバイスとして厚みを2mm以下にすることにより、デバイスの薄型化を維持した上で、電磁ノイズを受けた蓋体からの電気的影響を圧電振動素子が受けることを最低限度にすることができ、因ってジッタ特性が劣化することがなく、データ転送を確実に行うことが可能となる。   In addition, according to the piezoelectric device of the present invention, the distance between the lid body and the excitation electrode of the piezoelectric vibration element is 400 μm or more, and the thickness of the device is 2 mm or less, thereby maintaining the thinness of the device. In addition, it is possible to minimize the piezoelectric vibration element from being electrically affected by the lid body that has received electromagnetic noise, thereby preventing jitter characteristics from deteriorating and reliably transferring data. It becomes possible.

このような作用により、本発明により、小型化薄型化に対応でき、且つEMC効果が高い圧電デバイスを提供できる効果を奏する。   Due to such an action, the present invention has an effect of being able to respond to a reduction in size and thickness and providing a piezoelectric device having a high EMC effect.

以下、本発明を添付図面に基づいて詳細に説明する。
図1は本発明に係る圧電デバイスの一実施形態を、圧電デバイスの一つである水晶発振器を例に示した上方斜視図である。又、図2は図1に開示の水晶発振器の断面図である。尚、これらの図に示す水晶発振器は、大略的に、容器体1と、圧電振動素子としての水晶振動素子5と、発振回路や周波数調整用回路等を内蔵又は構成する集積回路素子6と電子部品素子7とにより形成されており、その厚み寸法は2mmとなっている。
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is an upper perspective view showing an embodiment of a piezoelectric device according to the present invention, taking as an example a crystal oscillator which is one of the piezoelectric devices. FIG. 2 is a cross-sectional view of the crystal oscillator disclosed in FIG. Note that the crystal oscillator shown in these drawings is roughly composed of a container body 1, a crystal resonator element 5 as a piezoelectric resonator element, an integrated circuit element 6 including or constituting an oscillation circuit, a frequency adjusting circuit, and the like. It is formed by the component element 7 and its thickness dimension is 2 mm.

水晶発振器の外形は、例えば、ガラス−セラミック、アルミナセラミックス等のセラミック材料から成り、その内部に容器体1の一方の主面に開口部を有する2つの空間部が形成されている容器体1と、42アロイやコバール,リン青銅等の金属から成る蓋体4とにより構成されており、容器体1の外周壁の上面には、タングステン(W)、モリブデン(Mo)等のメタライズ層(図示せず)が形成され、このメタライズ層の上面には、ニッケル(Ni)、金(Au)をメッキした導体層3が設けられ、導体層3の上面に蓋体4を各空間部の開口部を覆う形態で載置し、導体層3と蓋体4とを固着することにより水晶発振器の外形が構成されている。この容器体1に形成された2つの空間部のうち、第1の空間部8には水晶振動素子5及び集積回路素子6が実装され、第2の空間部9には電子部品素子7が実装されている。   The external shape of the crystal oscillator is made of, for example, a ceramic material such as glass-ceramic or alumina ceramic, and has a container body 1 in which two space portions having openings on one main surface of the container body 1 are formed. 42, and a lid 4 made of metal such as alloy, Kovar, phosphor bronze, etc., and a metallized layer (not shown) such as tungsten (W) or molybdenum (Mo) on the upper surface of the outer peripheral wall of the container body 1. The conductor layer 3 plated with nickel (Ni) and gold (Au) is provided on the upper surface of the metallized layer, and the lid 4 is provided on the upper surface of the conductor layer 3 with openings in the respective spaces. The external shape of the crystal oscillator is configured by placing the conductor layer 3 and the lid 4 in a covering form. Of the two spaces formed in the container body 1, the crystal resonator element 5 and the integrated circuit element 6 are mounted in the first space 8, and the electronic component element 7 is mounted in the second space 9. Has been.

容器体1の内部に収容される水晶振動素子5は、人工水晶体より所謂ATカットアングルでした切り出し外形加工を施した水晶片の両主面に一対の励振用電極11を被着・形成してなり、外部からの変動電圧が一対の励振用電極11を介して水晶片に印加されると、所定の周波数で厚みすべり振動を起こす。この水晶振動素子5は、その両主面に形成した一対の励振用電極11を、導電性接着剤を介して第1の空間部内に設けられた支持台に形成した振動素子接続用電極パッド12に電気的及び機械的に接続させることによって、水晶振動素子5を容器体1に搭載する。尚、本実施例における水晶振動素子5は、水晶片の励振振動領域のみをエッチング等により周囲より薄化することで、水晶振動素子5自身の強度を維持しつつ、高周波化に対応している所謂逆メサ型の水晶振動素子5が使用されている。   The crystal resonator element 5 accommodated in the container body 1 is formed by attaching and forming a pair of excitation electrodes 11 on both main surfaces of a crystal piece that has been cut out from the artificial crystal at a so-called AT cut angle. Thus, when a variable voltage from the outside is applied to the crystal piece via the pair of excitation electrodes 11, a thickness shear vibration occurs at a predetermined frequency. This quartz crystal resonator element 5 includes a pair of excitation electrodes 11 formed on both main surfaces thereof, and a resonator element connection electrode pad 12 formed on a support base provided in the first space through a conductive adhesive. The crystal resonator element 5 is mounted on the container body 1 by being electrically and mechanically connected to the container body 1. Note that the crystal resonator element 5 in this embodiment is compatible with higher frequencies while maintaining the strength of the crystal resonator element 5 itself by thinning only the excitation vibration region of the crystal piece from the surroundings by etching or the like. A so-called inverted mesa type crystal vibrating element 5 is used.

蓋体4は、42アロイやコバール,リン青銅等の平板矩形状の金属板を主体として成り、この金属板の主面表面にはAu、Snのろう材層2が施されている。尚、ろう材層2の生成にはAu−Snのクラッド材を使用しても構わない。このように形成したAu−Sn等のろう材層2と容器体1側の導体層3とをオーブンなどの加熱手段内で溶融接合して各空間部を気密封止する。この方法では、従来のシーム溶接では出来なかった本実施例のような形態の第1の空間部8と第2の空間部9との仕切り壁部分の接合も可能となる。   The lid 4 is mainly composed of a flat rectangular metal plate such as 42 alloy, Kovar, phosphor bronze, etc., and a brazing filler metal layer 2 of Au and Sn is applied to the main surface of this metal plate. In addition, you may use the clad material of Au-Sn for the production | generation of the brazing filler metal layer 2. FIG. The brazing filler metal layer 2 such as Au—Sn and the conductor layer 3 on the container body 1 side thus formed are melt-bonded in a heating means such as an oven to hermetically seal each space. In this method, it is possible to join the partition wall portions between the first space portion 8 and the second space portion 9 in the form as in the present embodiment, which cannot be achieved by conventional seam welding.

ここで蓋体4を容器体1内に形成されている配線導体を介して容器体1外底面に形成されている外部接続用電極端子10のうちのグランド電極端子に接続させておけば、水晶発振器の使用時には蓋体4がアースされることにより電磁シールド機能によるEMC効果が付与される。従って、蓋体4は外部接続用電極端子10のグランド電極端子に電気的に接続させておくことが好ましい。   If the lid 4 is connected to the ground electrode terminal of the external connection electrode terminals 10 formed on the outer bottom surface of the container body 1 via the wiring conductor formed in the container body 1, the crystal When the oscillator is used, the lid 4 is grounded to give an EMC effect by an electromagnetic shield function. Therefore, it is preferable that the lid 4 is electrically connected to the ground electrode terminal of the external connection electrode terminal 10.

水晶振動素子5と同空間部内に搭載される集積回路素子6は、第1の空間部内の底面に形成されているIC接続用電極パッドと、集積回路素子6表面に形成された容器体接続用電極パッドとを、ワイヤーボンディング法または金バンプ等で接続されるフリップチップ法により電気的導通が図られ、集積回路素子6の回路形成面には水晶振動素子5よりの出力信号に基づき水晶発振器としての出力信号を生成する発振回路等が形成されており、この発振回路で生成された発振出力信号は、例えば、クロック信号等の基準信号として利用される。   The integrated circuit element 6 mounted in the same space as the crystal resonator element 5 includes an IC connection electrode pad formed on the bottom surface in the first space and a container body connection formed on the surface of the integrated circuit element 6. The electrode pad is electrically connected by a wire bonding method or a flip chip method in which a gold bump or the like is connected, and a circuit forming surface of the integrated circuit element 6 is used as a crystal oscillator based on an output signal from the crystal vibrating element 5. An oscillation circuit for generating the output signal is formed, and the oscillation output signal generated by the oscillation circuit is used as a reference signal such as a clock signal, for example.

又、第2の空間部9に搭載されている電子部品素子7は、可変容量ダイオード及びチップ部品等であり、集積回路素子6からの出力信号の周波数を更に調整するために使用する。可変容量ダイオードは、外部制御電圧を印加することによって発振周波数を調整する役割を担うほか、インダクタ素子は水晶振動素子5と直列に接続すると周波数の調整範囲を広げる役割があり、他にコンデンサ素子、抵抗素子等も付加することが考えられる。   The electronic component element 7 mounted in the second space 9 is a variable capacitance diode, a chip component or the like, and is used for further adjusting the frequency of the output signal from the integrated circuit element 6. The variable capacitance diode plays a role of adjusting the oscillation frequency by applying an external control voltage, and the inductor element has a role of expanding the frequency adjustment range when connected in series with the crystal vibrating element 5. It is conceivable to add a resistance element or the like.

ここで、蓋体4と水晶振動素子5に形成された励振用電極11との間隔により発生する浮遊容量が、発振周波数を調整する可変容量ダイオードに対して並列に存在するため、外来ノイズにより浮遊容量が乱れると発振周波数にも影響を及ぼしジッタ特性が悪化する。圧電デバイスはデータ転送の際の基準信号源として使用されるため、その発振周波数が乱れるとデータ転送がうまくいかずビットエラーの発生要因となる。   Here, since the stray capacitance generated due to the distance between the lid 4 and the excitation electrode 11 formed on the crystal resonator element 5 exists in parallel with the variable capacitance diode for adjusting the oscillation frequency, the stray capacitance is floated due to external noise. When the capacitance is disturbed, the oscillation frequency is also affected and the jitter characteristics are deteriorated. Since the piezoelectric device is used as a reference signal source at the time of data transfer, if the oscillation frequency is disturbed, the data transfer is not successful and a bit error occurs.

次に、本発明の作用効果を図3に基づいて説明する。まず、図1及び図2に示す水晶発振器の構造に従って、容器体1の第1の空間部8内に水晶振動素子5及び集積回路素子6を搭載し、第2の空間部9には、バリキャップダイオード、チップインダクタ等の電子部品素子7が搭載されており、容器体1の外底面の4隅には電源電圧端子電極、出力端子電極及びグランド電極である外部接続用電極端子10をそれぞれ形成し、更に容器体1の各空間部を覆い、且つ外部接続用端子電極10のうちのグランド端子と接続しアースされている蓋体4の厚みbを80μm、150μm、200μm及び350μmと可変したものでそれぞれ水晶発振器を作製し、この水晶発振器を外部のPLL回路に搭載し、PLL出力のジッタ値を測定した。尚、ジッタ値の測定にはオシロスコープを用いた。   Next, the effect of this invention is demonstrated based on FIG. First, according to the structure of the crystal oscillator shown in FIGS. 1 and 2, the crystal resonator element 5 and the integrated circuit element 6 are mounted in the first space portion 8 of the container body 1, and the second space portion 9 has a varistor. Electronic component elements 7 such as cap diodes and chip inductors are mounted, and power supply voltage terminal electrodes, output terminal electrodes, and external connection electrode terminals 10 that are ground electrodes are formed at the four corners of the outer bottom surface of the container body 1. Further, the thickness b of the cover 4 that covers each space of the container body 1 and is connected to the ground terminal of the external connection terminal electrode 10 and is grounded is changed to 80 μm, 150 μm, 200 μm, and 350 μm. The crystal oscillators were each manufactured by mounting the crystal oscillator on an external PLL circuit, and the jitter value of the PLL output was measured. An oscilloscope was used to measure the jitter value.

その結果を図3のグラフに示す。水晶振動素子5の励振用電極11−蓋体4間に発生する浮遊容量が68fF程度として蓋体の厚みbが80μmの場合には、外部電磁ノイズが数値上昇要因の一つとして考えられるジッタ特性は約2000psが確認され、蓋体の厚みbが150μm以上の場合には、ジッタ特性は約1000psの許容値を下回ることができる。   The result is shown in the graph of FIG. When the stray capacitance generated between the excitation electrode 11 and the lid 4 of the crystal resonator element 5 is about 68 fF and the lid thickness b is 80 μm, the external electromagnetic noise is considered to be one of the factors causing the numerical increase. Is confirmed to be about 2000 ps, and when the thickness b of the lid is 150 μm or more, the jitter characteristic can fall below the allowable value of about 1000 ps.

以上のようなことから、蓋体4の厚みbが150μm以上では、それ以下のときと比較してジッタ特性が約1000ps程度改善されている。ただし、浮遊容量が小さくなる(水晶振動素子5の励振用電極11−蓋体4間の距離が広がる)につれて、この差は小さくなる。   As described above, when the thickness b of the lid 4 is 150 μm or more, the jitter characteristic is improved by about 1000 ps as compared with the case where the thickness b is less than 150 μm. However, this difference becomes smaller as the stray capacitance becomes smaller (the distance between the excitation electrode 11 of the crystal resonator element 5 and the lid 4 increases).

次に、本発明の別の作用効果について説明する。水晶振動素子5の第1の空間部開口側に向いた励振用電極11表面と、蓋体4の第1の空間部側に向いた主面表面との間隔aを可変させることで、水晶振動素子5の第1の空間部開口側に向いた励振用電極11表面と、蓋体4の第1の空間部側に向いた主面表面との間に発生する浮遊容量を変動させて実験を行った。使用する水晶振動素子5の形状は、逆メサ型のものを使用し、水晶振動素子5の第1の空間部開口側に向いた励振用電極11表面と蓋体表面との浮遊容量をC1、水晶振動素子5の第1の空間部内底面に対向する電極うちの励振振動部分に形成された電極と蓋体との浮遊容量をC2、水晶振動素子5の第1の空間部内底面に対向する電極うちの励振振動部分に形成された電極以外の電極と蓋体との浮遊容量をC3とする。このC1及びC2、C3の合成容量をCsとすると、
C=εS/d・・・(A)
の式より、各浮遊容量C1、C2及びC3を算出し、
Cs=C1(C2+C3)/C1+C2+C3・・・(B)
の式より総浮遊容量Csを算出する。
Next, another effect of the present invention will be described. By varying the distance a between the surface of the excitation electrode 11 facing the first space portion opening side of the crystal resonator element 5 and the surface of the main surface facing the first space portion side of the lid 4, the crystal vibration The experiment was performed by varying the stray capacitance generated between the surface of the excitation electrode 11 facing the first space portion opening side of the element 5 and the main surface of the lid 4 facing the first space portion side. went. The shape of the crystal resonator element 5 to be used is an inverted mesa type, and the stray capacitance between the surface of the excitation electrode 11 and the cover body surface facing the first space opening side of the crystal resonator element 5 is C1, The stray capacitance between the electrode formed on the excitation vibration portion of the electrode facing the bottom surface in the first space portion of the crystal resonator element 5 and the lid is C2, and the electrode facing the bottom surface in the first space portion of the crystal resonator element 5 Let C3 be the stray capacitance between the electrode other than the electrode formed in the excitation vibration portion and the lid. If the combined capacity of C1, C2, and C3 is Cs,
C = εS / d (A)
From the above equation, the stray capacitances C1, C2 and C3 are calculated,
Cs = C1 (C2 + C3) / C1 + C2 + C3 (B)
The total stray capacitance Cs is calculated from the following equation.

この時の蓋体の厚みを一定とし、水晶振動素子5の第1の空間部開口側の励振用電極11表面と蓋体4の第1の空間部側主面表面との距離aを200μm、300μm、400μm、500μm及び600μmにして、浮遊容量Csを可変したものでそれぞれ水晶発振器を作製し、各サンプルのジッタ特性をオシロスコープで測定する。   The thickness of the lid at this time is made constant, and the distance a between the surface of the excitation electrode 11 on the first space portion opening side of the crystal resonator element 5 and the surface of the first space portion side main surface of the lid 4 is 200 μm, Crystal oscillators are manufactured using 300 μm, 400 μm, 500 μm, and 600 μm with variable stray capacitance Cs, and the jitter characteristics of each sample are measured with an oscilloscope.

この結果を図4に示す。水晶振動素子5の第1の空間部開口側の励振用電極11表面と蓋体4の第1の空間部側主面表面との距離aが200μm(総浮遊容量Cs=68fF)の場合には、外部電磁ノイズが数値上昇要因の一つとして考えられるジッタ値は約2000psが確認され、距離aが300μm(総浮遊容量Cs=45fF)の場合には、ジッタ値は約1300psである。また、距離aが400μm(総浮遊容量Cs=27fF)の場合には、ジッタ値は約900psを示し、更に距離aが500μm(総浮遊容量Cs=20fF)の場合には、ジッタ値は約750psである。また更に距離aが600μm(総浮遊容量Cs=15fF)の場合には、ジッタ値は600psである。   The result is shown in FIG. When the distance a between the surface of the excitation electrode 11 on the opening side of the first space portion of the crystal resonator element 5 and the surface of the first space portion side main surface of the lid 4 is 200 μm (total stray capacitance Cs = 68 fF) When the distance a is 300 μm (total stray capacitance Cs = 45 fF), the jitter value in which the external electromagnetic noise can be considered as one of the factors of increasing the numerical value is confirmed. The jitter value is about 1300 ps. When the distance a is 400 μm (total stray capacitance Cs = 27 fF), the jitter value is about 900 ps, and when the distance a is 500 μm (total stray capacitance Cs = 20 fF), the jitter value is about 750 ps. It is. Further, when the distance a is 600 μm (total stray capacitance Cs = 15 fF), the jitter value is 600 ps.

以上のような結果から、水晶振動素子5の第1の空間部開口側の励振用電極11表面と蓋体4の第1の空間部側主面表面との距離aが400μm以上(総浮遊容量Csが約30fF以下)では、外部電磁ノイズが数値上昇要因の一つとして考えられるジッタ値が許容値の1000psを下回ることができる。よって、水晶振動素子5の励振用電極11と前記蓋体4との間隔aを広げ、EMC効果を最大限奏することによって、総浮遊容量を低減しジッタ値を良好な数値にすることが可能となる。   From the above results, the distance a between the surface of the excitation electrode 11 on the first space portion opening side of the crystal resonator element 5 and the surface of the first space portion side main surface of the lid 4 is 400 μm or more (total stray capacitance When Cs is about 30 fF or less), the jitter value in which external electromagnetic noise is considered as one of the factors of increasing the numerical value can fall below the allowable value of 1000 ps. Therefore, by widening the distance a between the excitation electrode 11 of the crystal resonator element 5 and the lid 4 and maximizing the EMC effect, the total stray capacitance can be reduced and the jitter value can be improved. Become.

尚、本発明は上述の実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。例えば、上述した実施形態においては、圧電振動素子の圧電材として水晶を用いた水晶振動素子を例に示したが、タンタル酸リチウム、ニオブ酸リチウムや圧電セラミックス等の他の圧電材を使用した場合にも本発明は適用可能である。又、上述した実施形態では、圧電発振器(水晶発振器)を例示し説明したが、他に圧電振動子や圧電フィルタ等の他の圧電デバイスにも適用可能である。   In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention. For example, in the above-described embodiment, the quartz resonator element using quartz as the piezoelectric material of the piezoelectric resonator element is shown as an example. However, when other piezoelectric materials such as lithium tantalate, lithium niobate, and piezoelectric ceramics are used. In addition, the present invention is applicable. In the above-described embodiment, the piezoelectric oscillator (crystal oscillator) is illustrated and described. However, the present invention can be applied to other piezoelectric devices such as a piezoelectric vibrator and a piezoelectric filter.

更に上述した実施形態においては、第1の空間部及び第2の空間部を容器体の同一主面に開口部を並列して形成している構造を例に説明したが、第1の空間部と第2の空間部の各開口部を容器体の異なる主面に各々形成した構造や、空間部を一つのみ形成しその空間部内に圧電振動素子や集積回路素子を含む全ての構成部品を収納搭載した構造においても本発明は実施可能である。また、2つ以上の容器体を接合して構成した圧電デバイスにおいても本発明は適宜実施可能である。   Furthermore, in the above-described embodiment, the first space portion and the second space portion have been described as an example of a structure in which openings are formed in parallel on the same main surface of the container body. And a structure in which each opening portion of the second space portion is formed on a different main surface of the container body, or all components including a piezoelectric vibration element and an integrated circuit element are formed in the space portion. The present invention can also be implemented in a structure in which it is housed and mounted. In addition, the present invention can be appropriately implemented also in a piezoelectric device configured by joining two or more container bodies.

図1は、本発明における圧電デバイスについて、圧電デバイスの一つである水晶発振器を例に示した分解斜視図である。FIG. 1 is an exploded perspective view showing a crystal oscillator as an example of a piezoelectric device in the piezoelectric device according to the present invention. 図2は、図1に示した水晶発振器を組み立て後切断した場合の断面図である。FIG. 2 is a cross-sectional view of the crystal oscillator shown in FIG. 図3は、蓋体の厚みを変化させた場合の、水晶発振器内に搭載された水晶振動素子の励振用電極表面と蓋体表面の距離と、ジッタ値との関係を示すグラフである。FIG. 3 is a graph showing the relationship between the jitter value and the distance between the excitation electrode surface and the lid surface of the crystal resonator element mounted in the crystal oscillator when the thickness of the lid is changed. 図4は、水晶発振器内に搭載された水晶振動素子の励振用電極と蓋体の間の浮遊容量値と、ジッタ値との関係を示すグラフである。FIG. 4 is a graph illustrating the relationship between the jitter value and the stray capacitance value between the excitation electrode and the lid of the crystal resonator element mounted in the crystal oscillator. 図5は、従来における圧電発振器の断面図である。FIG. 5 is a cross-sectional view of a conventional piezoelectric oscillator.

符号の説明Explanation of symbols

1・・・容器体
2・・・ろう材層
3・・・導体層
4・・・蓋体
5・・・水晶振動素子(圧電振動素子)
6・・・集積回路素子
7・・・電子部品素子
8・・・第1の空間部
9・・・第2の空間部
10・・・外部接続用電極端子
DESCRIPTION OF SYMBOLS 1 ... Container body 2 ... Brazing material layer 3 ... Conductor layer 4 ... Lid body 5 ... Quartz crystal vibration element (piezoelectric vibration element)
DESCRIPTION OF SYMBOLS 6 ... Integrated circuit element 7 ... Electronic component element 8 ... 1st space part 9 ... 2nd space part 10 ... External connection electrode terminal

Claims (3)

矩形状の容器体内部に形成された凹状の空間部内に、少なくとも圧電振動素子が搭載されており、該容器体の該空間部を囲繞する側壁部の頂面には、該空間部の開口部を覆う形態で矩形平板状の金属製蓋体が配置されており、該蓋体と該側壁部の頂面に設けた導体層とを接合固着し、該空間部内の該圧電振動素子を気密封止している圧電デバイスにおいて、
該蓋体の厚みが150μm以上であり、且つデバイスとして厚みを2mm以下であることを特徴とする圧電デバイス。
At least a piezoelectric vibration element is mounted in a concave space formed inside the rectangular container, and an opening of the space is formed on the top surface of the side wall that surrounds the space of the container. A rectangular flat plate-shaped metal lid is arranged so as to cover, and the lid and a conductor layer provided on the top surface of the side wall are bonded and fixed, and the piezoelectric vibration element in the space is hermetically sealed. In the piezoelectric device that has stopped,
A piezoelectric device having a thickness of 150 μm or more and a thickness of 2 mm or less as a device.
矩形状の容器体内部に形成された凹状の空間部内に、少なくとも圧電振動素子が搭載されており、該容器体の該空間部を囲繞する側壁部の頂面には、該空間部の開口部を覆う形態で矩形平板状の金属製蓋体が配置されており、該蓋体と該側壁部の頂面に設けた導体層とを接合固着し、該空間部内の圧電振動素子を気密封止している圧電デバイスにおいて、
該蓋体の該空間部側の主面と、該圧電振動素子の蓋体側主面に形成されている励振用電極との間隔が400μm以上であり、且つデバイスとしての厚みを2mm以下としたことを特徴とする圧電デバイス。
At least a piezoelectric vibration element is mounted in a concave space formed inside the rectangular container, and an opening of the space is formed on the top surface of the side wall that surrounds the space of the container. A rectangular flat plate-shaped metal lid is arranged so as to cover, and the lid and the conductor layer provided on the top surface of the side wall are bonded and fixed, and the piezoelectric vibration element in the space is hermetically sealed. Piezoelectric devices
The distance between the main surface of the lid on the space side and the excitation electrode formed on the main surface of the lid of the piezoelectric vibration element is 400 μm or more, and the thickness of the device is 2 mm or less. A piezoelectric device characterized by the above.
容器体には、2つ以上の空間部が形成されており、そのうちの少なくとも1つの空間部内に該圧電振動素子が搭載されていることを特徴とする請求項1又は請求項2記載の圧電デバイス。   3. The piezoelectric device according to claim 1, wherein the container body has two or more spaces, and the piezoelectric vibration element is mounted in at least one of the spaces. .
JP2005347143A 2005-11-30 2005-11-30 Piezoelectric oscillator Expired - Fee Related JP4758210B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005347143A JP4758210B2 (en) 2005-11-30 2005-11-30 Piezoelectric oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005347143A JP4758210B2 (en) 2005-11-30 2005-11-30 Piezoelectric oscillator

Publications (2)

Publication Number Publication Date
JP2007158465A true JP2007158465A (en) 2007-06-21
JP4758210B2 JP4758210B2 (en) 2011-08-24

Family

ID=38242289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005347143A Expired - Fee Related JP4758210B2 (en) 2005-11-30 2005-11-30 Piezoelectric oscillator

Country Status (1)

Country Link
JP (1) JP4758210B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099928A (en) * 2010-10-29 2012-05-24 Kyocera Kinseki Corp Piezoelectric device
JP2013192044A (en) * 2012-03-14 2013-09-26 Seiko Epson Corp Vibration element, vibrator, electronic device, oscillator and electronic apparatus
TWI667879B (en) * 2016-12-12 2019-08-01 日商村田製作所股份有限公司 Piezoelectric resonator unit, module component, and manufacturing method for same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1075120A (en) * 1996-08-29 1998-03-17 Kyocera Corp Crystal oscillator
JPH11186850A (en) * 1997-12-19 1999-07-09 Sii Quartz Techno:Kk Piezoelectric oscillator
JP2000323927A (en) * 1999-05-13 2000-11-24 Toyo Commun Equip Co Ltd Piezoelectric oscillator
JP2004304376A (en) * 2003-03-31 2004-10-28 Kyocera Kinseki Corp Chip piezoelectric vibrator
JP2005191105A (en) * 2003-12-24 2005-07-14 Kyocera Corp Package for housing electronic part and electronic equipment
JP2005260727A (en) * 2004-03-12 2005-09-22 Daishinku Corp Piezo oscillating element supporting structure, and piezo oscillator

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1075120A (en) * 1996-08-29 1998-03-17 Kyocera Corp Crystal oscillator
JPH11186850A (en) * 1997-12-19 1999-07-09 Sii Quartz Techno:Kk Piezoelectric oscillator
JP2000323927A (en) * 1999-05-13 2000-11-24 Toyo Commun Equip Co Ltd Piezoelectric oscillator
JP2004304376A (en) * 2003-03-31 2004-10-28 Kyocera Kinseki Corp Chip piezoelectric vibrator
JP2005191105A (en) * 2003-12-24 2005-07-14 Kyocera Corp Package for housing electronic part and electronic equipment
JP2005260727A (en) * 2004-03-12 2005-09-22 Daishinku Corp Piezo oscillating element supporting structure, and piezo oscillator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099928A (en) * 2010-10-29 2012-05-24 Kyocera Kinseki Corp Piezoelectric device
JP2013192044A (en) * 2012-03-14 2013-09-26 Seiko Epson Corp Vibration element, vibrator, electronic device, oscillator and electronic apparatus
TWI667879B (en) * 2016-12-12 2019-08-01 日商村田製作所股份有限公司 Piezoelectric resonator unit, module component, and manufacturing method for same

Also Published As

Publication number Publication date
JP4758210B2 (en) 2011-08-24

Similar Documents

Publication Publication Date Title
JP5804825B2 (en) Quartz vibrating element and quartz crystal device
JP2007060593A (en) Piezoelectric device and manufacturing method thereof
JP2009267866A (en) Piezoelectric oscillator
JP4758210B2 (en) Piezoelectric oscillator
JP2007067778A (en) Piezoelectric device
JP2009038534A (en) Piezoelectric oscillator
JP2009177543A (en) Mounted piezoelectric oscillator
JP2010258944A (en) Communication module
JP2007235289A (en) Piezoelectric oscillator
JP2007096881A (en) Piezoelectric oscillator
JP2008035304A (en) Piezoelectric vibrator
JP2006129305A (en) Piezoelectric vibrator and method of manufacturing the same
JP5101192B2 (en) Piezoelectric device
JP2007103995A (en) Piezoelectric device
JP2009207068A (en) Piezoelectric device
JP2008219093A (en) Piezoelectric oscillator
JP2007180700A (en) Piezoelectric device
JP6131798B2 (en) Surface mount type piezoelectric oscillator
JP4549253B2 (en) Piezoelectric device
JP2007067832A (en) Piezoelectric oscillator and manufacturing method thereof
JP4758123B2 (en) Piezoelectric device and manufacturing method thereof
JP2018074350A (en) Surface-mount type piezoelectric oscillator and mounting structure to circuit board
JP2010258947A (en) Piezoelectric device
JP2007124514A (en) Piezoelectric oscillator and method of manufacturing the same
JP2004356912A (en) Surface mount type piezoelectric oscillator

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081028

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110125

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110328

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110602

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4758210

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140610

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140610

Year of fee payment: 3

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140610

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees