JP2007149682A - 低温焼結される半導体電極用の組成物及びこの組成物を用いた色素増感太陽電池 - Google Patents
低温焼結される半導体電極用の組成物及びこの組成物を用いた色素増感太陽電池 Download PDFInfo
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- JP2007149682A JP2007149682A JP2006316515A JP2006316515A JP2007149682A JP 2007149682 A JP2007149682 A JP 2007149682A JP 2006316515 A JP2006316515 A JP 2006316515A JP 2006316515 A JP2006316515 A JP 2006316515A JP 2007149682 A JP2007149682 A JP 2007149682A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 239000000203 mixture Substances 0.000 title claims abstract description 69
- 238000009766 low-temperature sintering Methods 0.000 title 1
- 239000000243 solution Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000007864 aqueous solution Substances 0.000 claims abstract description 25
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 23
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 17
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 13
- 239000008151 electrolyte solution Substances 0.000 claims description 11
- 239000000084 colloidal system Substances 0.000 claims description 9
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000007606 doctor blade method Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 4
- 239000003637 basic solution Substances 0.000 claims 2
- 238000006467 substitution reaction Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000006703 hydration reaction Methods 0.000 claims 1
- 238000003756 stirring Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 239000002245 particle Substances 0.000 abstract description 12
- 238000005245 sintering Methods 0.000 abstract description 11
- 239000011230 binding agent Substances 0.000 abstract description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 38
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 35
- 239000002105 nanoparticle Substances 0.000 description 27
- 239000011248 coating agent Substances 0.000 description 20
- 238000000576 coating method Methods 0.000 description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- -1 hydrogen cations Chemical class 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 125000003158 alcohol group Chemical group 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012327 Ruthenium complex Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
【解決手段】ナノ結晶性酸化物コロイド溶液と塩基性水溶液とを含む半導体電極用組成物である。半導体電極用組成物は、結合剤を含まずとも、低温で粒子間の焼結が可能とする。また、半導体電極用組成物を伝導性基板に塗布した後、TiCl4溶液で後処理することによって、低温で粒子間焼結をさらに強化させる。このような半導体電極用組成物を利用して製造された色素増感太陽電池は、優れた光電変換効率を有することができる。
【選択図】図6
Description
12 透明伝導性基板
14 ペースト組成物
20 対向電極
22 透明伝導性基板
24 白金
26 微細孔
30 電解質溶液
40 高分子層
Claims (20)
- ナノ結晶性酸化物を含有するコロイド溶液と塩基性水溶液とを含む色素増感太陽電池の半導体電極用組成物。
- 前記ナノ結晶性酸化物が、TiO2、ZnO、及びNb2O5からなる群から選択され化合物である、請求項1に記載の半導体電極用組成物。
- 前記塩基性水溶液が、アンモニア水溶液である、請求項1に記載の半導体電極用組成物。
- 前記コロイド溶液と前記塩基性水溶液とが、1:0.1〜10の重量比で混合されてなる、請求項1に記載の半導体電極用組成物。
- 色素増感太陽電池の半導体電極用組成物を製造する方法であって、
ナノ結晶性酸化物と溶媒との水和反応によって、ナノ結晶性酸化物を含有するコロイド溶液を準備する工程と、
前記コロイド溶液の溶媒を、置換反応によってアルコールに置換する工程と、
前記置換反応によって得られたコロイド溶液に、塩基性水溶液を加える工程と、
を含んでなる、色素増感太陽電池の半導体電極用組成物の製造方法。 - 前記塩基性水溶液を加える際に、コロイド溶液を撹拌する工程をさらに含んでなる、請求項5に記載の方法。
- 前記ナノ結晶性酸化物が、TiO2、ZnO、及びNb2O5からなる群から選択される化合物である、請求項5に記載の方法。
- 前記塩基性水溶液が、アンモニア水溶液である、請求項5に記載の方法。
- 前記コロイド溶液と前記塩基性水溶液とが、1:0.1〜10の重量比となるように、前記塩基性水溶液を加える、請求項5に記載の方法。
- 伝導性基板上に、ナノ結晶性酸化物を含有するコロイド溶液と塩基性溶液とを含むペースト組成物と塗布して得られた半導体電極と、
対向電極と、
前記半導体電極と対向電極との間に介在した電解質溶液と、
を含む色素増感太陽電池。 - 前記伝導性基板が伝導性プラスチック基板である、請求項10に記載の色素増感太陽電池。
- 前記ナノ結晶性酸化物が、TiO2、ZnO、及びNb2O5からなる群から選択される化合物である、請求項10に記載の色素増感太陽電池。
- 前記塩基性水溶液が、アンモニア水溶液である、請求項10に記載の色素増感太陽電池。
- 前記ペースト組成物が、前記コロイド溶液と前記塩基性水溶液とを1:0.1〜10の重量比で含んでなる、請求項10に記載の色素増感太陽電池。
- 色素増感太陽電池を製造する方法であって、
第1伝導性基板上に、ナノ結晶性酸化物を含有するコロイド溶液と塩基性溶液とを含む半導体電極用組成物を塗布する工程と、
前記半導体電極用組成物が塗布された第1伝導性基板を、室温〜200℃で乾燥する工程と、
前記第1伝導性基板上に色素分子層を形成して、半導体電極を完成する工程と、
第2伝導性基板上に導電物を塗布して、対向電極を形成する工程と、
前記半導体電極と前記対向電極との間に電解質溶液を介在させる工程と、
を含む、方法。 - 前記第1伝導性基板をTiCl4溶液に含浸させて、次いで室温〜200℃で第1伝導性基板を乾燥する工程をさらに含む、請求項15に記載の方法。
- 第1伝導性基板上への半導体電極用組成物の塗布が、ドクタブレード法を利用して行われる、請求項15に記載の方法。
- 前記ナノ結晶性酸化物は、TiO2、ZnO、及びNb2O5からなる群から選択される化合物である、請求項15に記載の方法。
- 前記塩基性水溶液が、アンモニア水溶液である、請求項15に記載の方法。
- 前記半導体電極用組成物が、前記コロイド溶液と前記塩基性水溶液とを1:0.1〜10の重量比で含む、請求項15に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0112959 | 2005-11-24 | ||
KR1020050112959A KR100656367B1 (ko) | 2005-11-24 | 2005-11-24 | 저온에서 소결 가능한 반도체 전극용 조성물 및 이를이용한 염료감응 태양 전지 |
Publications (2)
Publication Number | Publication Date |
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JP2007149682A true JP2007149682A (ja) | 2007-06-14 |
JP4750000B2 JP4750000B2 (ja) | 2011-08-17 |
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JP2006316515A Expired - Fee Related JP4750000B2 (ja) | 2005-11-24 | 2006-11-24 | 低温焼結される半導体電極用の組成物及びこの組成物を用いた色素増感太陽電池 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070113889A1 (ja) |
EP (1) | EP1791144A3 (ja) |
JP (1) | JP4750000B2 (ja) |
KR (1) | KR100656367B1 (ja) |
AU (1) | AU2006228076C1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI387117B (zh) * | 2010-05-04 | 2013-02-21 | Univ Nat Taiwan | 太陽能電池裝置及其製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101220454B1 (ko) * | 2009-05-14 | 2013-01-18 | 한국전자통신연구원 | 염료감응 태양전지 반도체 전극용 비수용성 페이스트 조성물, 이의 제조방법, 이를 이용한 염료감응 태양전지 |
GB2480280A (en) * | 2010-05-11 | 2011-11-16 | Univ Bangor | Ultar-Low Temperature sintering of dye-sensitised solar cells |
KR101386148B1 (ko) * | 2010-07-26 | 2014-04-24 | 한국전기연구원 | 무소결 TiO₂ 전극의 제조방법 및 이에 의해 제조된 TiO₂ 전극 |
GB201202307D0 (en) * | 2012-02-10 | 2012-03-28 | Univ Bangor | Low temperture sintering of dye-sensitised solar cells using metal peroxide |
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2005
- 2005-11-24 KR KR1020050112959A patent/KR100656367B1/ko not_active IP Right Cessation
-
2006
- 2006-10-06 US US11/544,117 patent/US20070113889A1/en not_active Abandoned
- 2006-10-09 EP EP06121992A patent/EP1791144A3/en not_active Withdrawn
- 2006-10-13 AU AU2006228076A patent/AU2006228076C1/en not_active Ceased
- 2006-11-24 JP JP2006316515A patent/JP4750000B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11278843A (ja) * | 1998-01-27 | 1999-10-12 | Nippon Parkerizing Co Ltd | 酸化チタンゾルおよびその製造方法 |
JPH11339867A (ja) * | 1998-05-29 | 1999-12-10 | Catalysts & Chem Ind Co Ltd | 光電気セルおよび光電気セル用金属酸化物半導体膜の製造方法 |
JP2006093105A (ja) * | 2004-09-23 | 2006-04-06 | Korea Electronics Telecommun | 無バインダー及び高粘度ナノ粒子酸化物ペーストを利用した染料感応太陽電池のナノ粒子酸化物電極の形成方法 |
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TWI387117B (zh) * | 2010-05-04 | 2013-02-21 | Univ Nat Taiwan | 太陽能電池裝置及其製造方法 |
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KR100656367B1 (ko) | 2006-12-13 |
AU2006228076C1 (en) | 2010-11-18 |
EP1791144A3 (en) | 2011-03-30 |
JP4750000B2 (ja) | 2011-08-17 |
AU2006228076A1 (en) | 2007-06-07 |
AU2006228076B2 (en) | 2008-06-05 |
US20070113889A1 (en) | 2007-05-24 |
EP1791144A2 (en) | 2007-05-30 |
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