JP2007140231A - Method of manufacturing electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an electro-optical device, which relaxes bend of a substrate due to stress of a metallic film to reduce the occurrence of display defects. <P>SOLUTION: In the method of manufacturing the electro-optical device, which includes a process of forming the metallic film on a glass substrate, the glass substrate having the metallic film formed thereon is subjected to heat treatment after formation of the metallic film on the glass substrate and before patterning processing of the metallic film, whereby bend of the glass substrate is relaxed. For example, a heat treatment temperature may be within a range from 150 to 300°C, and a heat treatment time is within a range from 5 to 60 minutes. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a method for manufacturing an electro-optical device, and more particularly, to a method for manufacturing an electro-optical device that can alleviate warpage of a glass substrate by forming a metal film on the glass substrate.

Conventionally, as one aspect of an electro-optical device, a voltage is applied between electrodes formed on each of a pair of substrates arranged opposite to each other to selectively align the liquid crystal material of each pixel. In particular, liquid crystal devices that transmit light and display images such as characters and figures as a whole are widely known.
Electric wiring and switching elements made of a metal material such as chromium, tantalum, and tungsten are formed on a substrate constituting the liquid crystal device. These electric wirings and the like are formed by forming a metal film on the entire surface of the substrate by sputtering or vapor deposition and then patterning the metal film into a predetermined shape.

More specifically, when forming an active matrix array substrate having switching elements, for example, a sputtering method is used as follows. First, a thin film of tantalum is formed on a glass substrate by a sputtering method to form a lower electrode of the nonlinear resistance element and a square wiring electrode lower pattern of the wiring electrode. Next, an oxide film is formed on the surface of the first metal layer by using an anodic oxidation method to form an insulating film of the nonlinear resistance element. Next, a thin film of chromium is formed using a sputtering method to form an upper electrode of the nonlinear resistance element and a wiring electrode pattern of the wiring electrode. Next, a wiring electrode pattern is formed on the wiring electrode lower pattern, further ITO is formed into a thin film by sputtering, and display pixel electrodes are formed to complete an active matrix array substrate (see, for example, Patent Document 1). .
Japanese Patent Laid-Open No. 7-209664 (full text)

However, in the method of forming an electrical wiring or the like using a sputtering method as described in Patent Document 1, when a metal film is formed on the entire surface of the glass substrate, the warp of the glass substrate is caused by the stress of the metal film. There was a case. For example, in the case where a chromium film is formed on a glass substrate, there is a possibility that the surface on which the chromium film is formed is warped so as to be concave due to the relatively high tensile stress of chromium. Further, when a tantalum film is formed on a glass substrate, the tantalum film forming surface may be warped so as to be convex due to the relatively high compressive stress of tantalum.
Such a problem of warping of the glass substrate is considered to occur similarly when a metal film is formed by vapor deposition.

A substrate for an electro-optical device formed using a glass substrate having such a warp may cause a display defect when incorporated in the electro-optical device. For example, when a metal film on a warped substrate is etched after patterning a resist material, FIG.
c), an edge portion 62 a of the metal film 62, particularly in the vicinity of the peripheral portion of the substrate 61.
May be formed in a state inclined from a direction perpendicular to the substrate surface 61A. If a conductive material 64 is further laminated on such a metal film 62, as shown in FIG. 4D, the edge portion 62a of the lower metal film 62 may be disconnected, resulting in a display defect. It was.

Therefore, as a result of intensive studies, the inventors of the present invention have conducted heat treatment on the substrate on which the metal film is formed before performing the patterning process when the metal film is formed on the glass substrate.
It has been found that such problems can be solved.
That is, an object of the present invention is to provide a method of manufacturing an electro-optical device that can reduce the warpage of a glass substrate due to a metal film formed on the surface and reduce defective products.

According to the present invention, there is provided a method for manufacturing an electro-optical device including a step of forming a metal film on a glass substrate, and after forming the metal film on the glass substrate, before performing a patterning process on the metal film. In addition, a method for manufacturing an electro-optical device is provided in which warping of the glass substrate is reduced by heat-treating the glass substrate on which the metal film is formed, and the above-described problems can be solved.
That is, by performing a heat treatment on a glass substrate having a metal film formed on the surface, the degree of warpage of the glass substrate that has been warped by the stress of the metal film can be reduced. Accordingly, it is possible to increase the accuracy of the subsequent patterning process and the formation of the upper layer and manufacture an electro-optical device with few display defects.

In carrying out the method of manufacturing the electro-optical device of the present invention, the heat treatment temperature is set to 150 to
A value within the range of 300 ° C. is preferable.
By carrying out in this way, the stress can be relaxed without melting the metal film, and the warp of the glass substrate can be reduced efficiently.

In carrying out the method of manufacturing the electro-optical device of the present invention, the heat treatment time is 5-60.
A value within the range of minutes is preferable.
By carrying out in this way, an electro-optical device can be efficiently manufactured in consideration of the tact time with other processes.

In carrying out the method for manufacturing the electro-optical device of the present invention, it is preferable that the glass substrate is made of alkali-free glass.
By implementing in this way, since it is a board | substrate which consists of glass with higher melting | fusing point, the curvature of a glass substrate can be made smaller.

In carrying out the method of manufacturing the electro-optical device of the present invention, the glass substrate has a thickness of 0.
. It is preferable that it is a glass substrate of the value within the range of 3-0.7 mm.
By carrying out in this way, the degree of warping can be reduced with respect to a relatively thin glass substrate that is likely to warp due to the stress of the metal film.

In carrying out the method for manufacturing the electro-optical device of the present invention, it is preferable to form the metal film by using either a sputtering method or a vapor deposition method.
By implementing in this way, even if it is a case where the formation method of the metal film which tends to produce the curvature of a glass substrate is implemented, the grade of the curvature of a glass substrate can be made small.

In carrying out the method for manufacturing an electro-optical device according to the present invention, the metal film may be any one of a chromium film, a tantalum film, a tungsten film, a titanium film, a molybdenum film, an aluminum film, and a zinc film. preferable.
By carrying out in this way, even when a metal film having a relatively high stress is formed on the glass substrate, the degree of warpage of the glass substrate can be reduced.

In carrying out the method for manufacturing an electro-optical device according to the present invention, the metal film is preferably a metal film constituting a part of a wiring or a switching element.
By carrying out in this way, it is possible to efficiently prevent an electro-optical device with few display defects by preventing a conductive defect caused by warping of the substrate.

Further, according to the method for manufacturing the electro-optical device of the present invention, it is preferable to form another conductive material film on the patterned metal film.
By carrying out in this way, an electrode or the like can be formed with high accuracy on a glass substrate with a small degree of warpage, and an electro-optical device with excellent display quality can be manufactured.

Embodiments relating to a method of manufacturing an electro-optical device according to the invention will be specifically described below with reference to the drawings. However, this embodiment shows one aspect of the present invention and does not limit the present invention, and can be arbitrarily changed within the scope of the present invention.

An embodiment of the present invention is a method of manufacturing an electro-optical device including a step of forming a metal film on a glass substrate, and after the metal film is formed on the glass substrate, a patterning process is performed on the metal film. The method of manufacturing an electro-optical device is characterized in that the glass substrate on which the metal film is formed is subjected to heat treatment before being performed to reduce the warpage of the glass substrate.

Hereinafter, with reference to the drawings as appropriate, the method for manufacturing the electro-optical device according to the present embodiment will be described.
A manufacturing method of the liquid crystal device 10 including an element substrate including a TFT element (Thin Film Transistor) and a counter substrate including a color filter will be described as an example. However, the present invention is not limited to this, and the manufacturing process includes an active matrix type liquid crystal device having a two-terminal type TFD element and a passive matrix type liquid crystal device having no switching element. The present invention can be applied to various electro-optical devices including a step of forming a metal film on a glass substrate.

1. Liquid Crystal Device First, a liquid crystal device that can be manufactured by the method for manufacturing a liquid crystal device of the present embodiment will be described. FIG. 1 is a cross-sectional view of a pixel region portion of the liquid crystal panel 20.
As shown in FIG. 1, in the liquid crystal panel 20, the counter substrate 30 and the element substrate 60 are bonded to each other at a peripheral portion thereof by a sealing material (not shown). Further, the liquid crystal material 21 is sealed in a gap surrounded by the counter substrate 30, the element substrate 60, and a sealing material (not shown). Such a liquid crystal panel 20 is housed in a housing made of plastic or the like together with a light source such as an LED (light emitting diode) to constitute a liquid crystal device.

The counter substrate 30 has a color filter, that is, a colored layer 37 on the glass substrate 31, and
A counter electrode 33 formed on the colored layer 37 and an alignment film 45 formed on the counter electrode 33 are provided. In addition, an insulating layer 41 for optimizing retardation is provided between the colored layer 37 and the counter electrode 33 in the reflective region.
Here, the counter electrode 33 is a planar electrode formed over the entire surface of the counter substrate 30 with ITO (indium tin oxide) or the like. The colored layer 37 is R (red), G (green), B (blue) or C (cyan), M (magenta) at a position facing the pixel electrode 63 on the element substrate 60 side.
, Y (yellow), etc., each color filter element is provided. A light shielding film 39 is provided between the colored layers 37.

In addition, the opposing element substrate 60 includes a TFT element 69 as an active element functioning as a switching element on a glass substrate 61 and a TFT element 69 with a transparent insulating film 81 interposed therebetween.
And a pixel electrode 63 formed in an upper layer.
Here, in the element substrate 60 in the liquid crystal panel 20 shown in FIG. 1, the pixel electrode 63 is formed also as a light reflecting film 63 a for performing reflective display in the reflective region, and in the transmissive region T, the ITO electrode 63 is formed. Thus, the transparent electrode 63b is formed. The light reflection film 63a as the pixel electrode is formed of a light reflective material such as Al (aluminum), Ag (silver), or the like. An alignment film 85 made of a polyimide-based polymer resin is formed on the pixel electrode 63, and a rubbing process as an alignment process is performed on the alignment film 85.

Further, a phase difference plate 47 is formed on the outer surface (that is, the upper side in FIG. 1) of the counter substrate 30, and a polarizing plate 49 is further formed thereon. Similarly, a retardation film 87 is formed on the outer surface (that is, the lower side of FIG. 1) of the element substrate 60, and a polarizing plate 89 is further formed thereunder. Further, a backlight unit (not shown) is disposed below the element substrate 60.

The TFT element 69 includes a gate electrode 71 formed on the element substrate 60, a gate insulating film 72 formed on the entire area of the element substrate 60 on the gate electrode 71, and the gate insulating film 72 interposed therebetween. Semiconductor layer 70 formed above gate electrode 71, and semiconductor layer 70
A source electrode 73 formed on one side of the semiconductor layer 70 via a contact electrode 77, and a drain electrode 66 formed on the other side of the semiconductor layer 70 via a contact electrode 77.
The gate electrode 71 extends from a gate bus wiring (not shown), and the source electrode 73
Extends from a source bus wiring (not shown). Further, a plurality of gate bus lines extend in the horizontal direction of the element substrate 60 and are formed in parallel in the vertical direction at equal intervals, and the source bus lines cross the gate bus lines with the gate insulating film 72 interposed therebetween. A plurality of lines extending in the vertical direction are formed in parallel in the horizontal direction at equal intervals.

Such a gate bus wiring is connected to a liquid crystal driving IC (not shown) and functions as, for example, a scanning line, while a source bus wiring is connected to another driving IC (not shown), for example, a signal line. Acts as
The pixel electrode 63 is formed in a region excluding a portion corresponding to the TFT element 69 in a rectangular region defined by the gate bus wiring and the source bus wiring intersecting each other.

Here, the gate bus wiring and the gate electrode can be formed of chromium, tantalum, or the like, for example. The gate insulating film is formed of, for example, silicon nitride (SiN _x ), silicon oxide (SiO _x ), or the like. Further, the semiconductor layer can be formed of, for example, doped a-Si, polycrystalline silicon, CdSe, or the like. Furthermore, the contact electrode
For example, the source electrode can be formed of a-Si or the like, and the source bus wiring and the drain electrode integrated with the source electrode can be formed of titanium, molybdenum, aluminum, or the like.

The organic insulating film 81 is formed over the entire area of the element substrate 60 so as to cover the gate bus lines, the source bus lines, and the TFT elements. However, a contact hole 83 is formed in a portion corresponding to the drain electrode 66 of the organic insulating film 81, and the pixel electrode 63 and the drain electrode 66 of the TFT element 69 are electrically connected at the contact hole 83.
Further, the organic insulating film 81 has a concavo-convex pattern composed of a regular or irregular repetitive pattern of peaks and valleys as a scattering shape in a region corresponding to the reflective region.
As a result, the light reflection film 63a laminated on the organic insulating film 81 also has a light reflection pattern composed of an uneven pattern. However, this uneven pattern is not formed in the transmission region.

In the liquid crystal device including the liquid crystal panel 20 having the above-described structure, in the reflective display, external light such as sunlight or indoor illumination light enters the liquid crystal panel 20 from the counter substrate 30 side and is colored. The light passes through the layer 37 and the liquid crystal material 21 to reach the light reflecting film 63a, is reflected there, and again passes through the liquid crystal material 21 and the colored layer 37, and then goes out of the liquid crystal device to perform reflection display. .
On the other hand, in the transmissive display, the illumination device provided on the back side of the element substrate 60 is turned on, and the light emitted from the illumination device passes through the translucent transparent electrode 63b portion, and the colored layer 37.
By passing through the liquid crystal material 21 and the like and going out of the liquid crystal device, transmissive display is performed.

2. Next, with reference to FIGS. 2 to 5 as appropriate, the method for manufacturing the electro-optical device of the present invention will be described taking the method for manufacturing the liquid crystal device having the above-described configuration as an example. FIG. 2 is a flowchart showing a method for manufacturing the liquid crystal device of the present embodiment.

(1) Formation of Element Substrate (1) -1 Formation of Gate Bus Wiring and Gate Electrode First, as Step A1, a gate bus wiring and a gate electrode made of a metal material such as chromium are formed on a glass substrate.
Specifically, as step A1a, a metal film such as chromium or tantalum is formed on a glass substrate by a sputtering method. For example, in a vacuum chamber, chromium material is 200
Sputtered particles are sputtered from a chromium material target (evaporation source) while heating to ° C., and a metal film made of the chromium material is formed on the substrate. This sputtering method is not particularly limited as long as a chromium or tantalum thin film can be formed.
In addition, formation of a metal film is not limited to the above-mentioned sputtering method, It can implement by a vapor deposition method and another well-known means.

Here, as a result of forming a metal film on the glass substrate using a sputtering method or a vapor deposition method,
In some cases, the glass substrate is warped due to the inherent stress of the metal film.
For example, FIG. 3A shows a cross-sectional view of the glass substrate 61 when a metal film 62 made of a chromium material is formed on the glass substrate 61 by using a sputtering method. The glass substrate 61 is warped so that the surface 61A of the glass substrate 61 on which the chromium film 62 is formed becomes concave due to the relatively large tensile stress of the chromium material.
FIG. 3B shows a cross-sectional view of the glass substrate 61 when a metal film 62 made of a tantalum material is formed on the glass substrate 61 by a sputtering method. The glass substrate 61 is formed by the relatively large compressive stress of the tantalum material.
The warp is generated so that the surface 61A on which the tantalum film 62 is formed has a convex shape.

Next, in the method for manufacturing a liquid crystal device according to the present embodiment, as step A1b, the glass substrate on which the metal film is formed is heat-treated. That is, it is for relieving the curvature which had arisen in the glass substrate, and making it the state near flat.
More specifically, when warping occurs in the glass substrate, when forming a resist film in the next step, as shown in FIGS. The edge portion 105a of the resist film 105 is easily formed inclined from the direction perpendicular to the substrate surface 61A. In particular, considering the wraparound of light when the exposure process is performed, the edge 105a on the side close to the periphery of the substrate 61 in each resist film 105 is the resist film 1.
It is conceivable that it goes into the lower part of 05.
Further, when the metal film 62 provided with the edge-shaped resist film 105 on the surface is etched, as shown in FIG. 4C, the edge portion 62a of the metal film 62 is also formed in an inclined shape. Will be. In particular, the edge 62 a of the metal film 62 is formed so as to bite under the metal film 62 in accordance with the penetration of the etching solution or etching gas.

Then, when a conductive material 64 such as an upper layer electrode or wiring is formed on the edge-shaped metal film 62 so as to overlap, as shown in FIG. 4 (d), disconnection occurs at the edge portion 64A of the metal film 62. Cutting off occurs, causing display defects.
Therefore, in the manufacturing method of the liquid crystal device of the present embodiment, after the metal film such as chromium is formed and before the patterning process, the glass substrate on which the metal film is formed is subjected to a heat treatment,
The warpage of the glass substrate is alleviated so that the edge shape of the metal film does not become excessively inclined, and disconnection of the upper conductive material is further prevented.

More specifically, for example, it is preferable to put a glass substrate in a vacuum oven and heat-treat at a temperature in the range of 150 to 300 ° C. This is because the metal film made of chromium or the like is not melted, while the stress of the metal film can be efficiently relaxed.
Moreover, it is preferable to make the time which heat-processes in the range for 5 to 60 minutes. The reason is
This is because if the heat treatment time is short, warping of the substrate may not be alleviated.
On the other hand, if the heat treatment time is excessively long, the work efficiency may be reduced.
Accordingly, the heat treatment can be performed, for example, at 250 ° C. for 30 minutes.

Here, with reference to Table 1, the degree of warpage of the substrate in the case where the substrate in which the chromium film is formed on the glass substrate by the sputtering treatment is subjected to the heat treatment with different treatment times will be described.
The data shown in Table 1 is data measured using a substrate in which a 0.3 μm thick chromium film is formed on a glass substrate using an alkali-free glass having an outer shape of 470 mm × 370 mm and a thickness of 0.5 mm. is there. Further, the amount of warpage of the substrate is such that, as shown in FIG.
A value obtained by subtracting the height D2 from the surface of the mounting table 113 to the lowest point P2 of the substrate 61 from the surface of the mounting table 113 to the upper surface P1 of the support table 110 (μm).
). Furthermore, the relative value of the warpage amount is the warpage amount of each substrate when the warpage amount when heat treatment is not performed is 100.

In Table 1,
The substrate A is a substrate that has not been subjected to any heat treatment after the chromium film is formed on the glass substrate.
Substrate B is formed at 200 ° C. using a vacuum oven after a chromium film is formed on a glass substrate.
It is the board | substrate which heat-processed on the conditions for 30 minutes.
Substrate C was formed at 250 ° C. using a vacuum oven after a chromium film was formed on a glass substrate.
It is the board | substrate which heat-processed on the conditions for 10 minutes.
Substrate D was formed at 250 ° C. using a vacuum oven after a chromium film was formed on a glass substrate.
The substrate is heat-treated for 10 minutes and then further heat-treated at 200 ° C. for 30 minutes.
Substrate E is formed at 250 ° C. using a vacuum oven after a chromium film is formed on a glass substrate.
The substrate is heat-treated under conditions of 10 minutes and then heat-treated under conditions of 250 ° C. × 10 minutes.
Substrate F is formed at 250 ° C. using a vacuum oven after a chromium film is formed on a glass substrate.
After the heat treatment for 10 minutes, the substrate is further heat-treated under the conditions of 250 ° C. × 10 minutes and further heat-treated under the conditions of 200 ° C. × 30 minutes.
Then, four substrates are prepared and measured, and the average value is shown.

As shown in Table 1, the warp generated in the glass substrate is reduced by performing heat treatment on the substrate on which the chromium film is formed. Furthermore, it can be understood that by controlling the temperature condition and the heating time, the degree to which the warp is alleviated can be finely controlled.
In other words, if it is a metal film that constitutes a part of a wiring or a switching element, 0.2 to
Although formed with a thickness of about 1.0 μm, the outer shape of the substrate is about 300 to 500 mm on a side with respect to such a metal film, and the thickness of the substrate is 0.3 to Where a glass substrate of about 0.7 mm is used, the substrate is likely to warp due to the stress of the metal film, and the effect of alleviating the warpage of the glass substrate by carrying out the heat treatment of the present invention. Is easy to obtain. However, it goes without saying that the outer shape and thickness of the glass substrate and the thickness of the metal film do not limit the application range of the present invention.

Next, as step A1c, a resist film patterned in a predetermined shape is formed on the formed metal film made of chromium or the like. More specifically, after a resist material layer made of a photosensitive resin is formed on the metal film, the resist material layer is exposed and developed through a pattern mask corresponding to the shape of the gate bus wiring or the gate electrode. As a result, a resist film patterned into a predetermined shape can be formed. More specifically, in the case of a positive resist material, a pattern mask that transmits light only in the region corresponding to the formation location of the gate bus wiring or gate electrode is used. Then, the resist material is exposed to light using a pattern mask that shields light only from the region corresponding to the formation location of the gate bus wiring or the like, and then developed.
At this time, as described above, since the glass substrate is in a relatively flat state, the edge of the resist film is formed in a state that is nearly perpendicular to the substrate surface.

Next, as step A1d, the metal film having a resist film patterned in a predetermined shape on the surface is etched using an etching solution such as a hydrofluoric acid aqueous solution or a dry etching gas. Thereby, a patterned gate bus wiring and gate electrode can be formed.
At this time, as described above, since the edge of the resist film is formed in a state that is nearly perpendicular to the substrate surface, the edge of the patterned metal film is also in a state that is nearly perpendicular to the substrate surface. It is formed.

(1) -2 Formation of source bus wiring, source electrode, and drain electrode Next, as step A2, the source bus wiring, the source electrode, and the drain electrode are sequentially formed. These electrodes and wirings can be the same as the above-described gate bus wiring and gate electrode formation method except that the materials used are different. That is, after forming a metal film made of titanium, molybdenum, aluminum, or the like by sputtering or vapor deposition, a resist film is formed, and exposure and development are performed, so that these electrodes and wirings can be formed with high accuracy. it can. In addition, when forming these electrodes, wirings, etc., after the metal film is formed and before the patterning process, the substrate on which the metal film is formed is heated so that the stress of each metal material is affected. The warpage of the substrate due to the stress can be reduced by relaxing.

(1) -3 Formation of Gate Insulating Film, Contact Electrode, and Organic Insulating Layer Next, as Step A3, a gate insulating film, a contact electrode, and an interlayer insulating layer are sequentially formed. For example, the gate electrode is formed by laminating insulating materials such as silicon oxide and silicon nitride,
For example, the gate insulating film can be formed by exposing and developing a predetermined pattern using a photolithography method.
In addition, after laminating a semiconductor material such as a-Si for the contact electrode, and further laminating an acrylic resin or an epoxy resin for the interlayer insulating layer, patterning into a predetermined shape using, for example, a photolithography method Can be formed.

(1) -4 Formation of Pixel Electrode and Alignment Film Next, as Step A4, a transparent conductive material such as ITO or IZO is used in the transmissive region, and a reflective metal material such as aluminum is used in the reflective region. The pixel electrode is formed so as to be electrically connected to the TFT element. Thereafter, an element substrate can be manufactured by forming an alignment film on the outermost surface of the glass substrate.

(2) Formation of counter substrate On the other hand, as steps B1 to B5, a color filter substrate is formed as a counter substrate disposed to face the element substrate.
More specifically, a colored layer, a light shielding layer, a planarizing film, a counter electrode (planar electrode) on a glass substrate.
The alignment films are laminated by a known method to form a color filter substrate.

(3) Bonding and Arrangement of Liquid Crystal Material Next, as Step C, the manufactured element substrate and the color filter substrate are arranged opposite to each other, the liquid crystal material is arranged between the substrates, and the substrates are bonded using a sealing material. A liquid crystal panel is formed by combining them.
For example, a sealing material provided with an opening for injecting a liquid crystal material is formed on one of the substrates, and after bonding to the other substrate, the liquid crystal material is put into the cell from the opening by a vacuum injection method or the like. Can be arranged. Also, by forming a frame-shaped sealing material on one of the substrates, dropping a liquid crystal material on one of the substrates in accordance with the inside of the frame-shaped sealing material, and bonding the substrates together The liquid crystal material can also be placed in the cell.

(4) Assembly process Next, as Step D, a semiconductor element, a flexible circuit board, and the like are connected to the liquid crystal panel, and the liquid crystal panel is assembled in a casing together with a lighting device and the like. Thereby, a liquid crystal device can be manufactured.
In the liquid crystal device manufactured in this way, the warpage of the glass substrate is reduced, and the edges of the members made of the respective metal materials are in a state close to perpendicular to the substrate surface. It is possible to obtain a liquid crystal device that prevents disconnection of members and the like, has excellent display quality, and has few malfunctions.

(5) Other application examples The method for manufacturing an active matrix liquid crystal device having a TFT element has been described above as an example. However, other than the active matrix liquid crystal device having a TFD element, metal films can be used. It can be applied when manufacturing an electro-optical device including a step of forming the.

4). Application Example As an application example of the present invention, an electronic apparatus including a liquid crystal device obtained by the method for manufacturing a liquid crystal device of the present embodiment will be specifically described.
First, FIG. 6 is a schematic configuration diagram showing the overall configuration of the electronic apparatus of the present embodiment. This electronic device has a liquid crystal panel 20 and a control means 200 for controlling the liquid crystal panel 20. Also,
In FIG. 6, the liquid crystal panel 20 is conceptually divided into a panel structure 20 </ b> A and a drive circuit 20 </ b> B composed of a semiconductor element (IC) or the like. The control means 200 also includes a display information output source 201, a display processing circuit 202, a power supply circuit 203, and a timing generator 204.
The display information output source 201 includes a ROM (Read Only Memory) and a RAM (Random Acces).
s Memory), a storage unit composed of a magnetic recording disk, an optical recording disk, and the like, and a tuning circuit that tunes and outputs a digital image signal, based on various clock signals generated by the timing generator 204 The display information is supplied to the display processing circuit 202 in the form of a predetermined format image signal or the like.

The display processing circuit 202 includes various well-known circuits such as a serial-parallel conversion circuit, an amplification / inversion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit, and executes processing of input display information to display the image. Information is supplied together with the clock signal CLK to the drive circuit 20B. Furthermore, the drive circuit 20B can include a first electrode drive circuit, a second electrode drive circuit, and an inspection circuit. Further, the power supply circuit 203 has a function of supplying a predetermined voltage to each of the above-described components.
Since such an electronic device includes a liquid crystal device in which the warp of the glass substrate due to the stress of the metal film is mitigated, the electronic device can be an electronic device with few display defects due to disconnection or poor connection.

It is a figure provided in order to demonstrate the liquid crystal device manufactured by this embodiment. It is a figure which shows the flow of the manufacturing method of the liquid crystal device of this embodiment. It is a figure which shows the state which the glass substrate curved. It is a figure which shows the state which formed the metal film and the electrically conductive film on the curved glass substrate. It is a figure provided in order to demonstrate the measuring method of the curvature of a board | substrate. It is an example of the block diagram of the electronic device as an application example.

Explanation of symbols

30: counter substrate, 60: element substrate, 61: glass substrate, 62: metal film, 63a: light reflecting film (reflective pixel electrode), 63b: transmissive pixel electrode, 64: conductive film, 65: gate bus wiring, 66
: Drain electrode, 69: TFT element, 70: semiconductor layer, 71: gate electrode, 72: gate insulating film, 73: source electrode, 75: source bus wiring, 77: contact electrode, 81: organic insulating film, 85: orientation Membrane, 105: Resist material, 110: Support table, 113: Mounting table

Claims (9)

In a method for manufacturing an electro-optical device including a step of forming a metal film on a glass substrate,
After the metal film is formed on the glass substrate, before the patterning process is performed on the metal film, the glass substrate on which the metal film is formed is heat-treated, thereby reducing the warpage of the glass substrate. A method of manufacturing an electro-optical device. The method of manufacturing an electro-optical device according to claim 1, wherein the heat treatment temperature is set to a value within a range of 150 to 300 ° C. The method of manufacturing an electro-optical device according to claim 1, wherein the heat treatment time is set to a value within a range of 5 to 60 minutes. The method for manufacturing an electro-optical device according to claim 1, wherein the glass substrate is made of alkali-free glass. 5. The method of manufacturing an electro-optical device according to claim 1, wherein the glass substrate is a glass substrate having a value in a range of 0.3 to 0.7 mm. The method for manufacturing an electro-optical device according to claim 1, wherein the metal film is formed by using either a sputtering method or a vapor deposition method. 7. The metal film according to claim 1, wherein the metal film is any one of a chromium film, a tantalum film, a tungsten film, a titanium film, a molybdenum film, an aluminum film, and a zinc film. Manufacturing method of the electro-optical device. The method of manufacturing an electro-optical device according to claim 1, wherein the metal film is a metal film that forms part of a wiring or a switching element. The method for manufacturing an electro-optical device according to claim 1, further comprising forming another conductive material film on the patterned metal film.

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