JP2007110108A - Stacked integrated circuit chip and package - Google Patents

Stacked integrated circuit chip and package Download PDF

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JP2007110108A
JP2007110108A JP2006260910A JP2006260910A JP2007110108A JP 2007110108 A JP2007110108 A JP 2007110108A JP 2006260910 A JP2006260910 A JP 2006260910A JP 2006260910 A JP2006260910 A JP 2006260910A JP 2007110108 A JP2007110108 A JP 2007110108A
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integrated circuit
circuit chip
chip
substrate
stacked
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Kyono Kim
キョンオ キム
Bonkee Kim
ボンキ キム
Bo-Eun Kim
ボウン キム
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Integrant Technologies Inc
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Integrant Technologies Inc
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    • HELECTRICITY
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    • H01L23/12Mountings, e.g. non-detachable insulating substrates
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
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    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Abstract

<P>PROBLEM TO BE SOLVED: To provide a stacked integrated circuit chip and a package whereby the area of the package is reduced. <P>SOLUTION: The package includes a substrate 201, a first integrated circuit chip 202 electrically connected to the substrate by mechanical contact according to a surface mounting technique (SMT), and a second integrated circuit chip 203 which is stacked on the first integrated circuit chip and is electrically connected to the substrate by wire bonding. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、本発明は積層型集積回路チップ及びパッケージに関するものである。   The present invention relates to a stacked integrated circuit chip and a package.

半導体チップを製造する過程において、ウェーハ単位のエッチング及び蒸着などの工程を終え、テストを経て最終的にパッケージングをすることになる。一般的なパッケージングは、リードが形成された基板に半導体チップを実装してプラスチックのようなモールディング合成物にモールディングすることを言う。   In the process of manufacturing a semiconductor chip, processes such as etching and vapor deposition for each wafer are completed, and after packaging, the final packaging is performed. In general packaging, a semiconductor chip is mounted on a substrate on which leads are formed and molded into a molding compound such as plastic.

2つの集積回路チップのパッケージングに対する従来の技術を説明すると、以下の通りである。   A conventional technique for packaging two integrated circuit chips will be described as follows.

(1)2つの集積回路チップをそれぞれパッケージングして接続する。   (1) Two integrated circuit chips are packaged and connected.

(2)図1aは、2つの集積回路チップをそれぞれパッケージングしたもの101、102を示したものである。   (2) FIG. 1a shows a package 101 and 102 of two integrated circuit chips, respectively.

図1aにおいて、2つの集積回路チップはチップの外部で基板または伝送線(図示せず)によって互いに接続される。   In FIG. 1a, two integrated circuit chips are connected to each other by a substrate or transmission line (not shown) outside the chip.

図1aに示された構造は、2つの集積回路チップがそれぞれパッケージングされるものであり、2つの集積回路チップを1つの器機に実装する場合、器機の全体面積が大きくなるという問題がある。   The structure shown in FIG. 1a is one in which two integrated circuit chips are packaged. When two integrated circuit chips are mounted on one device, there is a problem that the entire area of the device increases.

(2)MCM(Multi-Chip-Module)の構造で2の集積回路チップを1つの平面上に分離配置して電気的に接続した後1つにパッケージングする。   (2) Two integrated circuit chips having a structure of MCM (Multi-Chip-Module) are separately arranged on one plane, electrically connected, and then packaged into one.

図1bは、1つの基板111の上に2つの集積回路チップ112、113をそれぞれボンディングワイヤ116によってワイヤボンディング接続したものであり、集積回路チップ112、113のパッド115と基板111のパッド114とを電気的に接続したものを示したものである。   In FIG. 1b, two integrated circuit chips 112 and 113 are bonded to each other by bonding wires 116 on one substrate 111. The pads 115 of the integrated circuit chips 112 and 113 and the pads 114 of the substrate 111 are connected to each other. It shows what is electrically connected.

しかし、このような構造もまた、それぞれの集積回路チップ112、113と同じ平面に位置し、集積回路チップ全体の占める面積はそのまま維持されるという問題がある。   However, such a structure is also located on the same plane as the integrated circuit chips 112 and 113, and the area occupied by the entire integrated circuit chip is maintained as it is.

したがって、上述の(1)と(2)の方法は、所定の器機で集積回路チップの占める面積を減らすのに限界があるため、全体器機の体積を小型化することができないという問題がある。   Therefore, the methods (1) and (2) described above have a problem in that the volume of the entire device cannot be reduced because there is a limit in reducing the area occupied by the integrated circuit chip with a predetermined device.

(3)2つの集積回路チップを積層型で積み上げて電気的に接続した後、パッケージングをするものである。この時、2つの集積回路チップはワイヤボンディングによって基板と電気的とに接続される。   (3) Two integrated circuit chips are stacked in a stacked form, electrically connected, and then packaged. At this time, the two integrated circuit chips are electrically connected to the substrate by wire bonding.

図1cは、2つの集積回路チップ122、123が積層型で基板121にそれぞれボンディングワイヤ127、128によって接続され、集積回路チップ122、123のパッド125、126と基板121のパッド124とが電気的に接続されたことを示したものである。   In FIG. 1C, two integrated circuit chips 122 and 123 are stacked and connected to the substrate 121 by bonding wires 127 and 128, respectively. The pads 125 and 126 of the integrated circuit chips 122 and 123 and the pads 124 of the substrate 121 are electrically connected. It shows that it was connected to.

しかし、(3)の方法は、パッケージ内部で集積回路チップの占める面積を減らすことができるが、上、下に積層された2つの集積回路チップが、それぞれ基板とワイヤボンディングとに接続されることによって互いに集積回路チップが処理する信号間の電気的干渉の問題が発生するようになる。特に、2つの集積回路チップが互いに異なる異種の信号を処理する場合、干渉の問題は大きくなる。   However, the method (3) can reduce the area occupied by the integrated circuit chip inside the package, but the two integrated circuit chips stacked on the upper and lower sides are connected to the substrate and wire bonding, respectively. This causes the problem of electrical interference between signals processed by the integrated circuit chips. In particular, when two integrated circuit chips process different kinds of signals from each other, the problem of interference increases.

(4)また他の従来の技術においては、韓国公開公報(公開番号:10−2005−0062442)に開示されている半導体モジュールがある(図1d参照)。ここで、半導体モジュールは2つの半導体が積層型で構成されているが、上部の半導体はフリップチップ型で上部介在ユニットに接続され、上部介在ユニットが基板とワイヤボンディングにより接続される。   (4) In another conventional technique, there is a semiconductor module disclosed in a Korean publication (publication number: 10-2005-0062442) (see FIG. 1d). Here, the semiconductor module is formed by stacking two semiconductors, but the upper semiconductor is flip-chip connected to the upper interposed unit, and the upper interposed unit is connected to the substrate by wire bonding.

しかし、図1dに示された構造は、本発明の技術分野とは異なる積層型半導体構造のためのモジュールに対するものであり、半導体を積層させるモジュール構造のために介在ユニットを用いる。よって、介在ユニットの高さと同じ程に全体半導体構造の高さが高くなり、複数の工程が必要になり、生産費用を増加させるようになるという問題がある。   However, the structure shown in FIG. 1d is for a module for a stacked semiconductor structure different from the technical field of the present invention, and an intervening unit is used for a module structure in which semiconductors are stacked. Therefore, there is a problem that the height of the entire semiconductor structure becomes as high as the height of the intervening unit, which requires a plurality of steps and increases the production cost.

また、上部半導体(2)は、上部介在ユニット(4)に接続されるためにフリップチップの形態を有さなければならない。これによって、上部半導体(2)がモジュール基板と接続するためには、上部介在ユニット(4)からワイヤボンディング(9)をしなければならず、これは1つの半導体を積層するためにフリップチップボンディングによる接続とワイヤボンディングによる接続などの2回にわたり個別に接続をしなければならないため構造が複雑になる。さらに、接続点が増加するほど、接続点による雑音に脆弱になるという問題点がある。   Also, the upper semiconductor (2) must have the form of a flip chip to be connected to the upper intervening unit (4). Thus, in order for the upper semiconductor (2) to connect to the module substrate, wire bonding (9) must be performed from the upper intervening unit (4), which is flip-chip bonding to stack one semiconductor. The structure becomes complicated because the connection must be made twice, such as connection by wire bonding and wire bonding. Furthermore, there is a problem that as the number of connection points increases, the connection point becomes more vulnerable to noise.

また、上部半導体を積層させるために上部と下部の半導体が等しいフリップチップの接続形態を有するようになるため、相互電気的干渉によってアイソレーションされないという問題がある。   In addition, since the upper and lower semiconductors have the same flip chip connection form for stacking the upper semiconductor, there is a problem that they are not isolated by mutual electrical interference.

そこで、本発明は、上述した従来の技術の問題点を解決するためになされたものであって、その目的は、パッケージの面積を減らす積層型集積回路チップ及びパッケージを提供することにある。   SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a stacked integrated circuit chip and a package that reduce the area of the package.

また、本発明の他の目的は、2つ以上の互いに関連性のある集積回路チップの相互電気的干渉を最小化させ、互いにアイソレーションされる積層型集積回路チップ及びパッケージを提供することにある。   It is another object of the present invention to provide a stacked integrated circuit chip and a package which are isolated from each other by minimizing mutual electrical interference between two or more related integrated circuit chips. .

上述した課題を解決するための本発明に係る実施形態は、基板と、該基板と表面実装技術(SMT;Surface Mount Technolog-y)による機械的接触によって電気的に接続される第1集積回路チップと、該第1集積回路チップの上に積層され、前記基板とワイヤボンディング(Wire−Bonding)によって電気的に接続される第2集積回路チップとを含む積層型集積回路チップである。   An embodiment according to the present invention for solving the above-described problems includes a substrate, and a first integrated circuit chip that is electrically connected to the substrate by mechanical contact using surface mount technology (SMT). And a second integrated circuit chip that is stacked on the first integrated circuit chip and is electrically connected to the substrate by wire-bonding.

ここで、前記第2集積回路チップが前記基板と直接ワイヤボンディンによって電気的に接続されることが好ましい。   Here, it is preferable that the second integrated circuit chip is electrically connected to the substrate directly by wire bonding.

ここで、前記基板が接合点とボンディング点とをさらに備え、前記第1集積回路チップが前記基板の前記接合点と表面実装技術による機械的接触によって電気的に接続される接合点をさらに備え、前記第2集積回路チップが前記基板の前記ボンディング点とワイヤボンディングによって電気的に接続されるボンディング点とをさらに備えることが好ましい。   Here, the substrate further includes a bonding point and a bonding point, and further includes a bonding point where the first integrated circuit chip is electrically connected to the bonding point of the substrate by mechanical contact by surface mounting technology, Preferably, the second integrated circuit chip further includes a bonding point that is electrically connected to the bonding point of the substrate by wire bonding.

ここで、前記第1集積回路チップと前記第2集積回路チップのうち何れかはRF(Radio Frequency)信号を受信するRF受信チップであり、前記第1集積回路チップと前記第2集積回路チップのうち他の一つは前記RF受信チップの出力信号であるベースバンド(Baseband)またはIF(Intermediate Frequency)信号を処理する復調チップであることが好ましい。   Here, one of the first integrated circuit chip and the second integrated circuit chip is an RF receiving chip that receives an RF (Radio Frequency) signal, and the first integrated circuit chip and the second integrated circuit chip The other one is preferably a demodulation chip that processes a baseband or IF (Intermediate Frequency) signal that is an output signal of the RF receiving chip.

ここで、前記第1集積回路チップと前記第2集積回路チップとが、S−DMB、T−DMB、ISDB−T、WibroまたはDVB−Hを受信して復調することが好ましい。   Here, it is preferable that the first integrated circuit chip and the second integrated circuit chip receive and demodulate S-DMB, T-DMB, ISDB-T, Wibro, or DVB-H.

ここで、前記基板が、BGA(Ball Grid Array)、LGA(Land Grid Array)、多層印刷回路基板(PCB)またはLTCC(Low Temp.Co-fired Ceramics)であることを特徴とする請求項1に記載の積層型集積回路チップが好ましい。   Here, the substrate is a BGA (Ball Grid Array), an LGA (Land Grid Array), a multilayer printed circuit board (PCB), or LTCC (Low Temp. Co-fired Ceramics). The stacked integrated circuit chip described is preferred.

本発明の他の実施形態は、上述の積層型集積回路チップを2つ以上含む積層型集積回路パッケージである。   Another embodiment of the present invention is a stacked integrated circuit package including two or more of the above-described stacked integrated circuit chips.

ここで、前記積層型集積回路チップのうち少なくとも1つ以上の積層型集積回路チップにおいて、前記第1集積回路チップと前記第2集積回路チップのうち何れかはRF信号を受信するRF受信チップであり、前記第1集積回路チップと前記第2集積回路チップのうち他の一つは前記RF受信チップの出力信号であるベースバンド(Baseband)またはIF(Intermediate Frequency)信号を処理する復調チップであることが好ましい。   Here, in at least one of the stacked integrated circuit chips, one of the first integrated circuit chip and the second integrated circuit chip is an RF receiving chip that receives an RF signal. The other one of the first integrated circuit chip and the second integrated circuit chip is a demodulation chip that processes a baseband or IF (Intermediate Frequency) signal that is an output signal of the RF receiving chip. It is preferable.

本発明のまた異なる実施形態は、上述の積層型集積回路チップと、前記基板と電気的に接続される所定の単位素子とを含む積層型集積回路パッケージである。   Another embodiment of the present invention is a stacked integrated circuit package including the above-described stacked integrated circuit chip and a predetermined unit element electrically connected to the substrate.

ここで、前記単位素子が受動素子または能動素子であることが好ましい。   Here, the unit element is preferably a passive element or an active element.

ここで、前記第1集積回路チップと前記第2集積回路チップのうち何れかはRF信号を受信するRF受信チップであり、前記第1集積回路チップと前記第2集積回路チップのうち他の一つは前記RF受信チップの出力信号であるベースバンド(Baseband)またはIF(Intermediate Frequency)信号を処理する復調チップであることが好ましい。   Here, one of the first integrated circuit chip and the second integrated circuit chip is an RF receiving chip that receives an RF signal, and the other one of the first integrated circuit chip and the second integrated circuit chip. One is preferably a demodulation chip that processes a baseband or IF (Intermediate Frequency) signal that is an output signal of the RF receiving chip.

ここで、前記第1集積回路チップと前記第2集積回路チップとが、S−DMB、T−DMB、ISDB−T、WibroまたはDVB−Hを受信して復調することが好ましい。   Here, it is preferable that the first integrated circuit chip and the second integrated circuit chip receive and demodulate S-DMB, T-DMB, ISDB-T, Wibro, or DVB-H.

本発明に係るまた他の実施形態は、 基板と、該基板上に積層される第1集積回路チップと、該第1集積回路チップの上に積層される第2集積回路チップとを含み、該第2集積回路チップだけが前記基板とワイヤボンディングによって電気的に接続されること積層型集積回路チップである。   Another embodiment according to the present invention includes a substrate, a first integrated circuit chip stacked on the substrate, and a second integrated circuit chip stacked on the first integrated circuit chip, Only the second integrated circuit chip is electrically connected to the substrate by wire bonding, which is a stacked integrated circuit chip.

ここで、前記第2集積回路チップが前記基板と直接ワイヤボンディングによって電気的に接続されることが好ましい。   Here, it is preferable that the second integrated circuit chip is electrically connected to the substrate directly by wire bonding.

ここで、前記第1集積回路チップと前記第2集積回路チップのうち何れかはRF信号を受信するRF受信チップであり、該第1集積回路チップと前記第2集積回路チップのうち何れかは前記RF受信チップの出力信号であるベースバンド(Baseband)またはIF(Intermediate Frequency)信号を処理する復調チップであることが好ましい。   Here, one of the first integrated circuit chip and the second integrated circuit chip is an RF receiving chip that receives an RF signal, and one of the first integrated circuit chip and the second integrated circuit chip is A demodulation chip that processes a baseband or IF (Intermediate Frequency) signal that is an output signal of the RF receiving chip is preferable.

ここで、前記第1集積回路チップと前記第2集積回路チップとが、S−DMB、T−DMB、ISDB−T、WibroまたはDVB−Hを受信して復調することが好ましい。   Here, it is preferable that the first integrated circuit chip and the second integrated circuit chip receive and demodulate S-DMB, T-DMB, ISDB-T, Wibro, or DVB-H.

本発明は、集積回路チップの占める面積を減らすことができ、器機の小型化に寄与して、費用を節減して生産性を高めることがきるという効果が得られる。   The present invention can reduce the area occupied by the integrated circuit chip, contribute to the downsizing of the equipment, and can reduce the cost and increase the productivity.

また、本発明は、2つの互いに異なる形態の信号を処理する集積回路チップ間の電気的干渉を最小化し、性能の劣化を防止することができるという効果が得られる。   In addition, the present invention has the effect of minimizing electrical interference between integrated circuit chips that process two different types of signals and preventing performance degradation.

以下、本発明のもっとも好ましい実施形態を添付する図面を参照して説明する。   Hereinafter, a most preferred embodiment of the present invention will be described with reference to the accompanying drawings.

図2は、本発明に係る一実施形態で、積層型集積回路チップの断面を示したものである。   FIG. 2 is a cross-sectional view of a stacked integrated circuit chip according to an embodiment of the present invention.

基板201は、1又は複数のボンディング点206と、1又は複数の接合点205とを備える。好ましい実施形態において基板は、電気的接続のための金属配線または単位受動素子を内部に有するBGA(Ball Grid Array)、LGA(Land Grid Array)、多層印刷回路基板(PCB)またはLTCC(Low Temp.Co-fired Ceramics)などである。   The substrate 201 includes one or more bonding points 206 and one or more bonding points 205. In a preferred embodiment, the substrate is a BGA (Ball Grid Array), an LGA (Land Grid Array), a multilayer printed circuit board (PCB), or an LTCC (Low Temp. Co-fired Ceramics).

第1集積回路チップ202は、下面に1又は複数の接合点204を備える。第1集積回路チップ202の接合点204は、基板201の接合点205と表面実装技術による機械的接触によって電気的に接続される。   The first integrated circuit chip 202 includes one or more junction points 204 on the lower surface. The junction point 204 of the first integrated circuit chip 202 is electrically connected to the junction point 205 of the substrate 201 by mechanical contact using surface mounting technology.

第1集積回路チップ202の接合点204は、熱によって溶融されて冶金学的な接合を具現する方式のソルダーボール(solder ball)やバンプ(bump)などを用いることができる。   The bonding points 204 of the first integrated circuit chip 202 may be solder balls or bumps that are melted by heat to realize metallurgical bonding.

第2集積回路チップ203は、第1集積回路チップ202の上面上に積層型で積層される。第2集積回路チップ203は、上面において1又は複数のボンディング点207を備える。第2集積回路チップ203のボンディング点207は、基板201のボンディング点206とボンディングワイヤ208によるワイヤボンディング接続により電気的に接続される。   The second integrated circuit chip 203 is stacked on the upper surface of the first integrated circuit chip 202 in a stacked manner. The second integrated circuit chip 203 includes one or a plurality of bonding points 207 on the upper surface. The bonding point 207 of the second integrated circuit chip 203 is electrically connected to the bonding point 206 of the substrate 201 by wire bonding connection using a bonding wire 208.

このように構成することによって、第1集積回路チップ202は基板201の接合点204、205によって表面実装されて電気的に接続され、第2集積回路チップ203は第1集積回路チップ202の上に積層されて基板201とボンディングワイヤ208によって電気的に接続される。   With this configuration, the first integrated circuit chip 202 is surface-mounted and electrically connected by the junction points 204 and 205 of the substrate 201, and the second integrated circuit chip 203 is placed on the first integrated circuit chip 202. They are stacked and electrically connected to the substrate 201 by bonding wires 208.

一般に、基板と集積回路チップとの電気的接続は、その形状によってワイヤボンディングとフリップチップボンディングとに分けられる。   Generally, the electrical connection between the substrate and the integrated circuit chip is divided into wire bonding and flip chip bonding depending on the shape.

ワイヤボンディングはリードが形成された基板に半導体チップを上げて置き、微細なワイヤを用いて基板と半導体チップとを電気的に接続する。   In wire bonding, a semiconductor chip is raised and placed on a substrate on which leads are formed, and the substrate and the semiconductor chip are electrically connected using a fine wire.

フリップチップボンディングは、半導体チップと基板のバンプまたはソルドボールのような突出部の接合点によって基板と半導体チップとを電気的に接続する。フリップチップボンディングは半導体チップと基板とを電気的に接続する時にワイヤボンディングと同じ程の空間を節約することができ、小さなパッケージの製造が可能である。   In the flip chip bonding, the substrate and the semiconductor chip are electrically connected by a junction between the semiconductor chip and a protruding portion such as a bump or a solder ball of the substrate. Flip chip bonding can save as much space as wire bonding when electrically connecting a semiconductor chip and a substrate, and enables the manufacture of small packages.

このようなフリップチップボンディングは表面実装技術に属する。表面実装技術は電子部品を基板に接続する時、部品孔によらず、表面の接続パターンにソルダリング(soldering)を通して接続する技術を意味する。この技術によって部品の未消化、リードピンが狭まることへの対応が可能となり、高密度の実装が実現する。   Such flip chip bonding belongs to surface mounting technology. The surface mounting technique means a technique of connecting an electronic component to a substrate through soldering to a surface connection pattern regardless of the component hole. This technology makes it possible to cope with undigested parts and narrowing of the lead pins, realizing high-density mounting.

したがって、第1集積回路チップ202と第2集積回路チップ203とは、基板201との電気的な接続方式が互いに相異なっていることになる。   Therefore, the first integrated circuit chip 202 and the second integrated circuit chip 203 are different from each other in electrical connection method with the substrate 201.

図1cに示されているように、積層型の2つのチップがワイヤボンディングという等しい接続方式を用いる場合には、集積回路チップ間の電気的信号干渉の問題が発生するようになる。   As shown in FIG. 1c, when two stacked chips use an equal connection method called wire bonding, a problem of electrical signal interference between integrated circuit chips occurs.

特に、2つの集積回路チップが互いに関連のある場合には、このような電気的干渉が増大して器機の性能を劣化させる。   In particular, when two integrated circuit chips are related to each other, such electrical interference increases and degrades the performance of the instrument.

本発明では、このような問題点を解決するために積層される集積回路チップの接続方式を異なるようにし、集積回路チップ間の電気的信号干渉を最小化しようとするものである。   In order to solve such a problem, the present invention aims to minimize the electrical signal interference between the integrated circuit chips by changing the connection method of the integrated circuit chips to be stacked.

本発明の好ましい実施形態において、第1集積回路チップ202はRF信号を受信するRF受信チップであり、第2集積回路チップ203はRF受信チップの出力信号を復調するベースバンドチップまたはIFチップである。または、第2集積回路チップ203はRF信号を受信するRF受信チップであり、第1集積回路チップ202はRF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップである。   In a preferred embodiment of the present invention, the first integrated circuit chip 202 is an RF receiving chip that receives an RF signal, and the second integrated circuit chip 203 is a baseband chip or an IF chip that demodulates the output signal of the RF receiving chip. . Alternatively, the second integrated circuit chip 203 is an RF receiving chip that receives an RF signal, and the first integrated circuit chip 202 is a demodulation chip that processes a baseband or IF signal that is an output signal of the RF receiving chip.

前者の場合を基準に説明すると以下の通りである。   The former case will be described as follows.

第1集積回路チップ202はRF信号を受信するRF受信チップであり、第2集積回路チップ203はRF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップであり、RF受信チップとRF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップとは共にデジタルチューナを構成する。   The first integrated circuit chip 202 is an RF receiving chip that receives an RF signal, and the second integrated circuit chip 203 is a demodulation chip that processes a baseband or IF signal that is an output signal of the RF receiving chip. Together with the baseband or the demodulation chip that processes the IF signal that is the output signal of the RF receiving chip, it constitutes a digital tuner.

RF受信チップはRF信号を受信して処理し、RF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップはデジタル信号を処理する。   The RF receiving chip receives and processes the RF signal, and the demodulation chip that processes the baseband or IF signal that is the output signal of the RF receiving chip processes the digital signal.

図1bに示されている第1集積回路チップ112と第2集積回路チップ113とが、図1bの構造のように全てボンディングワイヤ116で基板111と接続されると、RF信号とデジタル信号の電気的干渉とによってデジタルチューナの性能が劣化する。   When the first integrated circuit chip 112 and the second integrated circuit chip 113 shown in FIG. 1b are all connected to the substrate 111 with bonding wires 116 as in the structure of FIG. The performance of the digital tuner deteriorates due to mechanical interference.

図1cに示されている2つの集積回路チップ122、123も全てボンディングワイヤ127、128で接続されたものであるため、同じ問題が発生するようになる。   Since the two integrated circuit chips 122 and 123 shown in FIG. 1c are all connected by bonding wires 127 and 128, the same problem occurs.

したがって、本発明では、第1集積回路チップ202はワイヤボンディングを用いずに表面実装技術を用いて基板201と電気的に接続し、第2集積回路チップ203はワイヤボンディング208を用いて基板201と電気的に接続するものであるため、RF信号とデジタル信号との電気的干渉を最小化したものである。   Accordingly, in the present invention, the first integrated circuit chip 202 is electrically connected to the substrate 201 using surface mounting technology without using wire bonding, and the second integrated circuit chip 203 is connected to the substrate 201 using wire bonding 208. Since it is electrically connected, electrical interference between the RF signal and the digital signal is minimized.

後者の場合は、第1集積回路チップ202がRF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップであり、第2集積回路チップ203がRF受信チップである以外は、全て同じであるため説明を省略する。   In the latter case, all are the same except that the first integrated circuit chip 202 is a demodulation chip for processing a baseband or IF signal that is an output signal of the RF receiving chip, and the second integrated circuit chip 203 is an RF receiving chip. Therefore, the description is omitted.

このような、RF受信チップとRF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップとを含むデジタルチューナは、S−DMB、T−DMB、ISDB−T、WibroまたはDVB−Hを受信して復調することができる。   Such a digital tuner including an RF receiving chip and a demodulating chip that processes a baseband or IF signal that is an output signal of the RF receiving chip is S-DMB, T-DMB, ISDB-T, Wibro, or DVB-H. Can be received and demodulated.

図3は、本発明に係る他の実施形態であり、積層型集積回路パッケージの断面を示したものである。   FIG. 3 shows another embodiment of the present invention and shows a cross section of a stacked integrated circuit package.

図2の積層型集積回路チップにおいて、基板301には所定の単位素子309がさらに含まれ、基板301と電気的に接続される。所定の単位素子309はインピーダンスマッチングをするためのマイクロストリップラインやストリップラインであり得、抵抗、インダクター、コンデンサーのような受動素子またはフィルタであり得、トランジスタのような能動素子も可能である。   In the stacked integrated circuit chip of FIG. 2, the substrate 301 further includes a predetermined unit element 309 and is electrically connected to the substrate 301. The predetermined unit element 309 may be a microstrip line or a strip line for impedance matching, may be a passive element such as a resistor, an inductor, or a capacitor, or a filter, and may be an active element such as a transistor.

図3に示されているように、基板301の上には第1及び第2集積回路チップ302、303と単位素子309とが含まれ、充填材(Encapsulation Material;310)によって全体がパッケージングされる。   As shown in FIG. 3, the first and second integrated circuit chips 302 and 303 and the unit element 309 are included on the substrate 301, and the whole is packaged by an encapsulating material (310). The

充填材は集積回路チップと基板との電気的接続部を保護する役目を果たすものであり、モールディング材(Molding Componens)または空気(Air Cavity)などを用いることができる。   The filler serves to protect the electrical connection between the integrated circuit chip and the substrate, and a molding material (Molding Componens) or air (Air Cavity) can be used.

また、図3に示された積層型集積回路パッケージは、パッケージングの際に第1集積回路チップ302と第2集積回路チップ303部分のみをエポキシモールディング(Epoxy molding)し、第1集積回路チップ302と第2集積回路チップ303及び所定の単位素子309とが含まれた基板301全体を金属カン(Matal can)で覆ってパッケージングすることができる。   In the stacked integrated circuit package shown in FIG. 3, only the first integrated circuit chip 302 and the second integrated circuit chip 303 are subjected to epoxy molding at the time of packaging. The entire substrate 301 including the second integrated circuit chip 303 and the predetermined unit element 309 can be covered with a metal can and packaged.

第1集積回路チップと第2集積回路チップの位置との接続関係は図2の説明部分と同じであるため省略する。   The connection relationship between the positions of the first integrated circuit chip and the second integrated circuit chip is the same as that described in FIG.

なお、本発明は、上記の実施形態に限定されるものではなく、本発明に係る技術的思想から逸脱しない範囲内で様々な変更が可能であり、それらも本発明の技術的範囲に属する。   In addition, this invention is not limited to said embodiment, A various change is possible within the range which does not deviate from the technical idea which concerns on this invention, and they also belong to the technical scope of this invention.

従来2つの集積回路チップをそれぞれパッケージングしたことを示したものである。It shows that two conventional integrated circuit chips have been packaged. 従来に1つの基板の上に2つの集積回路チップをそれぞれワイヤボンディングしたものであり、集積回路チップのパッドと基板のパッドとを電気的に接続したものを示したものである。FIG. 2 shows a conventional structure in which two integrated circuit chips are wire-bonded on one substrate, and the pads of the integrated circuit chip and the pads of the substrate are electrically connected. 従来に2つの集積回路チップが積層型で基板にそれぞれワイヤボンディングしたものであり、集積回路チップのパッドと基板のパッドとが電気的に接続されたものを示したものである。Conventionally, two integrated circuit chips are laminated and wire-bonded to a substrate, respectively, and the integrated circuit chip pad and the substrate pad are electrically connected. 従来の半導体モジュールを示したものである。1 shows a conventional semiconductor module. 本発明の一実施形態による積層型集積回路チップの断面図を示したものである。1 is a cross-sectional view of a stacked integrated circuit chip according to an embodiment of the present invention. 本発明の他の実施形態による積層型集積回路パッケージの断面図を示したものである。FIG. 5 is a cross-sectional view of a stacked integrated circuit package according to another embodiment of the present invention.

Claims (16)

基板と、
該基板と表面実装技術(SMT;Surface Mount Technology)による機械的接触によって電気的に接続される第1集積回路チップと、
該第1集積回路チップの上に積層され、前記基板とワイヤボンディング(Wire-Bonding)によって電気的に接続される第2集積回路チップと
を含むことを特徴とする積層型集積回路チップ。
A substrate,
A first integrated circuit chip electrically connected to the substrate by mechanical contact with a surface mount technology (SMT);
A laminated integrated circuit chip, comprising: a second integrated circuit chip laminated on the first integrated circuit chip and electrically connected to the substrate by wire bonding.
前記第2集積回路チップが前記基板と直接ワイヤボンディンによって電気的に接続されることを特徴とする請求項1に記載の積層型集積回路チップ。   The stacked integrated circuit chip according to claim 1, wherein the second integrated circuit chip is electrically connected to the substrate directly by wire bonding. 前記基板が接合点とボンディング点とをさらに備え、
前記第1集積回路チップが前記基板の前記接合点と表面実装技術による機械的接触によって電気的に接続される接合点をさらに備え、
前記第2集積回路チップが前記基板の前記ボンディング点とワイヤボンディングとによって電気的に接続されるボンディング点をさらに備える、
ことを特徴とする請求項1に記載の積層型集積回路チップ。
The substrate further comprises a bonding point and a bonding point;
The first integrated circuit chip further comprises a junction point that is electrically connected to the junction point of the substrate by mechanical contact using surface mounting technology;
The second integrated circuit chip further comprises a bonding point electrically connected by the bonding point and wire bonding of the substrate.
The multilayer integrated circuit chip according to claim 1, wherein:
前記第1集積回路チップと前記第2集積回路チップのうち何れかはRF(Radio Frequency)信号を受信するRF受信チップであり、
前記第1集積回路チップと前記第2集積回路チップのうち他の一つは前記RF受信チップの出力信号であるベースバンド(Baseband)またはIF(Intermediate Frequency)信号を処理する復調チップであること
を特徴とする請求項1に記載の積層型集積回路チップ。
One of the first integrated circuit chip and the second integrated circuit chip is an RF receiving chip that receives an RF (Radio Frequency) signal,
The other one of the first integrated circuit chip and the second integrated circuit chip is a demodulation chip that processes a baseband or IF (Intermediate Frequency) signal that is an output signal of the RF receiving chip. The stacked integrated circuit chip according to claim 1, wherein:
前記第1集積回路チップと前記第2集積回路チップとが、S−DMB、T−DMB、ISDB−T、WibroまたはDVB−Hを受信して復調することを特徴とする請求項4に記載の積層型集積回路チップ。   The first integrated circuit chip and the second integrated circuit chip receive and demodulate S-DMB, T-DMB, ISDB-T, Wibro, or DVB-H, respectively. Multilayer integrated circuit chip. 前記基板が、BGA(Ball Grid Array)、LGA(Land Grid Array)、多層印刷回路基板(PCB)またはLTCC(Low Temp.Co-fired Ceramics)であることを特徴とする請求項1に記載の積層型集積回路チップ。   The laminated substrate according to claim 1, wherein the substrate is a BGA (Ball Grid Array), an LGA (Land Grid Array), a multilayer printed circuit substrate (PCB), or LTCC (Low Temp. Co-fired Ceramics). Type integrated circuit chip. 請求項1に係る積層型集積回路チップを2つ以上含むことを特徴とする積層型集積回路パッケージ。   A stacked integrated circuit package comprising two or more stacked integrated circuit chips according to claim 1. 前記積層型集積回路チップのうち少なくとも1つ以上の積層型集積回路チップにおいて、
前記第1集積回路チップと前記第2集積回路チップのうち何れかはRF信号を受信するRF受信チップであり、
前記第1集積回路チップと前記第2集積回路チップのうち他の一つは前記RF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップであることを特徴とする請求項7に記載の積層型集積回路パッケージ。
In at least one stacked integrated circuit chip among the stacked integrated circuit chips,
One of the first integrated circuit chip and the second integrated circuit chip is an RF receiving chip that receives an RF signal,
8. The other one of the first integrated circuit chip and the second integrated circuit chip is a demodulation chip that processes a baseband or IF signal that is an output signal of the RF receiving chip. The stacked integrated circuit package described.
請求項1に係る積層型集積回路チップと、前記基板と電気的に接続される 単位素子とを含むことを特徴とする積層型集積回路パッケージ。   A stacked integrated circuit package comprising: the stacked integrated circuit chip according to claim 1; and a unit element electrically connected to the substrate. 前記単位素子が受動素子または能動素子であることを特徴とする請求項9に記載の積層型集積回路パッケージ。   10. The stacked integrated circuit package according to claim 9, wherein the unit element is a passive element or an active element. 前記第1集積回路チップと前記第2集積回路チップのうち何れかはRF信号を受信するRF受信チップであり、
前記第1集積回路チップと前記第2集積回路チップのうち他の一つは前記RF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップであること
を特徴とする請求項9に記載の積層型集積回路パッケージ。
One of the first integrated circuit chip and the second integrated circuit chip is an RF receiving chip that receives an RF signal,
The other one of the first integrated circuit chip and the second integrated circuit chip is a demodulation chip that processes a baseband or IF signal that is an output signal of the RF receiving chip.
The stacked integrated circuit package according to claim 9.
前記第1集積回路チップと前記第2集積回路チップとが、S−DMB、T−DMB、ISDB−T、WibroまたはDVB−Hを受信して復調することを特徴とする請求項9に記載の積層型集積回路パッケージ。   The first integrated circuit chip and the second integrated circuit chip receive and demodulate S-DMB, T-DMB, ISDB-T, Wibro, or DVB-H, respectively. Stacked integrated circuit package. 基板と、
該基板上に積層される第1集積回路チップと、
該第1集積回路チップの上に積層される第2集積回路チップとを含み、
該第2集積回路チップだけが前記基板とワイヤボンディングによって電気的に接続されること
を特徴とする積層型集積回路チップ。
A substrate,
A first integrated circuit chip stacked on the substrate;
A second integrated circuit chip stacked on the first integrated circuit chip,
Only the second integrated circuit chip is electrically connected to the substrate by wire bonding.
前記第2集積回路チップが前記基板と直接ワイヤボンディングによって電気的に接続されることを特徴とする請求項13に記載の積層型集積回路チップ。   14. The stacked integrated circuit chip according to claim 13, wherein the second integrated circuit chip is electrically connected to the substrate directly by wire bonding. 前記第1集積回路チップと前記第2集積回路チップのうち何れかはRF信号を受信するRF受信チップであり、
該第1集積回路チップと前記第2集積回路チップのうち他の一つは前記RF受信チップの出力信号であるベースバンドまたはIF信号を処理する復調チップであること
を特徴とする請求項13に記載の積層型集積回路チップ。
One of the first integrated circuit chip and the second integrated circuit chip is an RF receiving chip that receives an RF signal,
14. The other one of the first integrated circuit chip and the second integrated circuit chip is a demodulation chip that processes a baseband or IF signal that is an output signal of the RF receiving chip. The laminated integrated circuit chip as described.
前記第1集積回路チップと前記第2集積回路チップとが、S−DMB、T−DMB、ISDB−T、WibroまたはDVB−Hを受信して復調することを特徴とする請求項13に記載の積層型集積回路チップ。   The first integrated circuit chip and the second integrated circuit chip receive and demodulate S-DMB, T-DMB, ISDB-T, Wibro, or DVB-H, respectively. Multilayer integrated circuit chip.
JP2006260910A 2005-10-14 2006-09-26 Stacked integrated circuit chip and package Pending JP2007110108A (en)

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