JP2007109782A - Semiconductor light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can disperse current flowing in a light emitter to uniform the intensity of light emission within a plane of a semiconductor light emitting device, as well as to improve light emitting efficiency. <P>SOLUTION: The light emitting device 1 is provided at least with a laminated body which is formed of a first conductivity type layer 5 and a second conductivity type layer 7 with a light emitter 6 in-between; a metal thin-film layer 9 provided on the outer surface of the second conductivity-type layer forming the laminated body; a transparent conductor 10 provided on the outer surface of the metal thin-film layer; a first electrode 11 provided in a part of the outre surface of the transparent conductor; and a second electrode 12 which is arranged in contact with the first conductivity type layer, at a position where it does not overlap the light emitter, the second conductivity type layer, the metal thin-film layer, and the transparent conductor. The transparent conductor is provided with a region 20 in its inside that blocks at least a part of current flowing between the first and second electrodes and that is apart from the second electrode. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a compound semiconductor light emitting device that extracts light from a compound semiconductor layer, and more particularly to a compound semiconductor light emitting device using a transparent conductive film as a window electrode.

  Gallium nitride-based compound semiconductors such as GaN, AlGaN, InGaN, and InGaAlN are attracting attention as visible light emitting devices such as green and blue.

  In the manufacture of optical devices using these gallium nitride compound semiconductors, sapphire is usually used as a substrate for crystal growth because there are few substrates that lattice match with gallium nitride compound semiconductors. When an insulating substrate such as sapphire is used, an electrode cannot be taken out from the substrate side unlike a light emitting element using a conductive semiconductor substrate such as GaAs or InP. The p-side electrode and the n-side electrode provided in are formed on one side of the substrate on which the semiconductor layers are stacked.

In a conventional semiconductor light emitting device, a metal thin film is used as an electrode for extracting light. In this case, it is difficult to increase the area because it is impossible to increase the film thickness in order to ensure the transmittance, and it is not possible to ensure sufficient conductivity.
Therefore, it has been considered that light generated from the light emitter in the semiconductor light emitting element can be efficiently extracted outside by using a transparent conductive film such as ITO as an electrode for extracting light and increasing the area. FIG. 14 is a cross-sectional view showing an example of a semiconductor light emitting device having a transparent conductive film formed thereon. As shown in FIG. 14, a semiconductor light emitting device 101 having a transparent conductive film formed thereon has an n-type GaN layer 104 having Si as a dopant on one surface (upper surface in FIG. 14) of a sapphire substrate 102 with a GaN buffer layer 103 interposed therebetween. And an n-type AlGaN layer 105 using Si as a dopant is provided through the n-type GaN layer 104. The n-type AlGaN layer 105 is used to form an InGaN and GaN multiple quantum well (MQW) structure, the light-emitting unit 106, the p-type AlGaN layer 107 containing p-type dopant Mg is formed via the light-emitting unit 106, and p-type. Similarly, a p-type GaN layer 108 using Mg as a dopant through the AlGaN layer 107, a metal thin film layer 109 made of Ni and Au through the p-type GaN layer 108, and ITO or FTO and ITO through the metal thin film layer 109. A transparent conductor 110 is provided. In addition, a p-side electrode 111 is provided on a part of the outer surface of the transparent conductor 110, while an n-side electrode 112 is provided in contact with the n-type AlGaN layer 105.

The semiconductor light emitting device 101 having the above-described structure uses a transparent conductive film 110 as an electrode for extracting light, and forms an entire surface electrode so that current flows uniformly.
However, in the structure in which the counter electrode is formed in the semiconductor, as indicated by the arrow line in FIG. 15, the current does not flow uniformly into the light emitting portion because the resistance of the semiconductor is high. FIG. 15 is a schematic cross-sectional view illustrating the flow of electricity into the light emitting unit.
Therefore, as shown in FIG. 16, only a part of the light is emitted. FIG. 16 is a diagram showing the relationship between the position of the transparent conductor and the emission intensity.

  Further, as a device capable of greatly improving the light emission efficiency in a semiconductor light emitting device, a semiconductor layer including a first electrode on one surface of a semiconductor substrate and a light emitting portion on the other surface; A distribution electrode formed by being distributed to a part of the surface, a transparent conductive film that is formed to cover the surface of the semiconductor layer and the distribution electrode, and is electrically connected to the distribution electrode, and a part of the surface of the transparent conductive film There has been proposed a pedestal electrode that is electrically connected to the transparent conductive film (see Patent Document 1).

However, although the semiconductor light emitting device as described above has a distribution electrode that guides the current supplied from the pedestal electrode so as not to flow in the direct downward direction, it is a portion resulting from the formation of an electric circuit and is electrically connected to the distribution electrode. Since there is only one transparent conductive film, it has been extremely difficult to efficiently disperse the flow of current into the light emitting portion.
JP 2001-189493 A

  The present invention has been made in view of the above circumstances, and a semiconductor that can disperse a current flowing into a light-emitting portion, can achieve uniform emission intensity in a plane of a semiconductor light-emitting element, and can improve luminous efficiency. An object is to provide a light-emitting element.

  A light-emitting device according to claim 1 of the present invention includes a laminated body in which a first conductive type layer and a second conductive type layer are arranged via a light emitting portion, and an outer surface of a second conductive type layer forming the laminated body. A disposed metal thin film layer, a transparent conductor disposed on an outer surface of the metal thin film layer, a first electrode disposed on a part of the outer surface of the transparent conductor, the light emitting unit, and the second conductivity type A light emitting device including at least a second electrode disposed in contact with the first conductivity type layer at a position not overlapping the layer, the metal thin film layer, and the transparent conductor, wherein the transparent conductor is Further, a portion that inhibits at least a part of the current flowing between the first electrode and the second electrode is disposed in the interior so as to be separated from the second electrode.

  In such a configuration, the light emitting part means a layer located between the first conductivity type layer and the second conductivity type layer, or an interface between the first conductivity type layer and the second conductivity type layer.

  The light emitting device according to claim 2 of the present invention is characterized in that, in claim 1, the portion is arranged so as to be substantially parallel to the second electrode.

  The light emitting device according to claim 3 of the present invention is characterized in that, in claim 1, the portion is independent.

  The light emitting device according to claim 4 of the present invention is characterized in that, in claim 1, the portion is continuous.

  The light emitting device according to claim 5 of the present invention is characterized in that in claim 3 or 4, a plurality of the portions are arranged.

  A light-emitting element according to a sixth aspect of the present invention is the light-emitting element according to the first aspect, wherein the transparent conductor is thinner than the periphery of the portion.

The present invention adopts a configuration in which a portion that inhibits at least a part of the current flowing between the first electrode and the second electrode is disposed inside the transparent conductor so as to be separated from the second electrode. While promoting the diffusibility of the electric current which flows into a light emission part, the increase of the electric current which passes a pn junction part is brought about.
In addition, since the light emission efficiency of the pn junction that constitutes the element that contributes to light emission is improved without being biased in the element surface, the light emission intensity can be made uniform in the surface of the semiconductor light emitting element, thereby improving the light emission luminance. The present invention can provide a light emitting element.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a cross-sectional view showing an example of a semiconductor light emitting device according to the present invention.
In this semiconductor light emitting device 1, an n-type GaN layer 4 using Si as a dopant is disposed on one surface (upper surface in FIG. 1) of a sapphire substrate 2 via a GaN buffer layer 3. An n-type AlGaN layer (main first conductivity type layer) 5 using Si as a dopant is disposed. Then, a light emitting part 6 having an InGaN and GaN multiple quantum well (MQW) structure through the n-type AlGaN layer 5 and a p-type AlGaN layer containing Mg as a p-type dopant through the light emitting part 6 (main second Conductive layer 7, p-type AlGaN layer 7, p-type GaN layer 8 using Mg as a dopant, metal thin-film layer 9 made of Ni and Au, and metal thin-film layer 9 via p-type GaN layer 8. A transparent conductor 10 made of ITO or FTO and ITO is provided. The transparent conductor 10 has a portion that inhibits at least part of the current flowing between the p-side electrode 11 as the first electrode and the n-side electrode 12 as the second electrode (hereinafter referred to as an inhibition portion). 20) is arranged so as to be separated from the second electrode 12. The p-side electrode 11 is disposed on a part of the outer surface of the transparent conductor 10, while the light emitting unit 6, the second conductivity type layer 7, the metal thin film layer 9, and the transparent conductor 10. The n-side electrode 12 is disposed in contact with the n-type AlGaN layer 5 at a position that does not overlap with the n-type AlGaN layer 5.

  The light-emitting elements include metal-organic chemical vapor deposition (hereinafter referred to as “MOCVD method”), halide vapor deposition (HDCVD), and metal organic vapor phase epitaxy (hereinafter referred to as “Metal Organic Vapor Phase Epitaxy”). The MOVPE method is used to grow each layer by a vapor phase growth method such as MOVPE method.

In the MOCVD method, for example, trimethylgallium (TMG) as a gallium source, ammonia (NH ₃ ) as a nitrogen source, a compound containing hydrogen atoms such as hydrazine, monosilane (SiH ₄ ) as an Si source, and trimethylaluminum as an Al source. (TMA) Trimethylindium (TMI) is used as the In source, biscyclopentadienylmagnesium (Cp ₂ Mg) is used as the Mg source, and hydrogen gas, nitrogen gas, or the like is used as the carrier gas.

  The structure of the light emitting element may be a structure in which at least a first conductive type layer, a second conductive type layer, a metal thin film layer, and a transparent conductor as a current diffusion layer are sequentially laminated on one surface of the substrate. A single hetero structure, a double hetero structure, or the like can be used. For example, an n-type contact layer and an n-type cladding layer, a light emitting portion, a p-type cladding layer, a p-type contact layer, a metal thin film layer, and a transparent conductor as a current diffusion layer are sequentially arranged on the surface of the sapphire substrate via a buffer layer. A stacked double hetero structure is known as a high light emitting element.

  In the following, the case where the light emitting portion forms a layer will be described. In the case of interface light emission, the interface between the n-type cladding layer and the p-type cladding layer functions as the light emitting portion.

  The n-type contact layer can be formed of GaN that is non-doped or doped with an n-type dopant such as Si, Ge, S, or C. The n-type cladding layer can be formed of, for example, AlGaN, InAlGaN or the like that is non-doped or doped with an n-type dopant.

  The light emitting part can be formed of non-doped or n-type dopant and / or InGaN, InAlGaN or the like doped with p-type dopant such as Zn, Mg, Cd, Ba, etc., and from ultraviolet to red by forming a light emitting part containing indium It is possible to change the emission wavelength. When the n-type dopant is doped in the light emitting portion, the emission intensity at the peak wavelength is further increased, and when the p-type dopant is doped, the wavelength can be brought to the long wavelength side by about 0.5 eV. When the dopant is doped, the emission wavelength can be moved to the longer wavelength side while the emission intensity is kept high.

  The p-type cladding layer can be formed of AlGaN doped with a p-type dopant, InAlGaN, or the like. In addition, the p-type contact layer can be formed of GaN doped with a p-type dopant, and GaN can obtain a preferable ohmic contact with the electrode as in the n-type cladding layer. Further, the n-type cladding layer and / or the p-type cladding layer can be omitted. If omitted, the contact layer acts as a cladding layer.

  In order to improve the ohmic contact with the p-type contact layer or the p-type cladding layer, the metal thin film layer is preferably an alloy or a multilayer film containing the same metal atoms as the dopant doped in the p-type layer, for example, Mg atoms, It is formed by a vapor deposition method, a sputtering method, or the like, and is annealed at a predetermined temperature to achieve ohmic contact. Of course, in order not to reduce the light transmittance, there is an upper limit on the thickness of the metal thin film layer.

  Transparent conductors are mainly tin-doped indium oxide films (hereinafter referred to as ITO films) or ITO films because of their high conductivity and high permeability, and fluorine-added tin oxide films as their heat-resistant protective films. It can be formed by laminating a film (Fluorine-doped-Tin-Oxide: hereinafter referred to as FTO film).

  Conventionally, an ITO film is often formed by a low-pressure sputtering method, and an FTO film is often formed by an atmospheric CVD method. However, when using different manufacturing methods for forming an ITO film and an FTO film, the number of processes is large. Therefore, both the ITO film and the FTO film can be formed, and the film can be formed in the atmosphere (Spray Pyrolysis Deposition: hereinafter referred to as SPD). Method) is preferably used.

  The SPD method is a method in which a raw material solution is spray-coated on a heated substrate to cause thermal decomposition and chemical reaction on the surface of the substrate to form a film, but it can be formed in the atmosphere and manufactured. This is a film forming method that is preferably used for cost reduction.

  In the present invention, the ITO film is formed by spraying an ethanol solution of indium chloride (hydrate) and tin chloride (hydrate) on a substrate heated to 350 ° C., and the amount of tin added to indium The element ratio is preferably 5 at%, and it is a thin film having a thickness of about 100 nm to 1000 nm that is excellent in conductivity and permeability.

  The FTO film is formed by spraying a mixed solution of tin chloride (hydrate) ethanol solution and a saturated aqueous solution of ammonium fluoride onto a substrate heated to 400 ° C. or higher and 700 ° C. or lower. The amount is preferably about several ppm to several thousand ppm doped with respect to tin, and is a thin film having a thickness of about 50 nm to 300 nm and excellent in heat resistance and chemical resistance.

  The FTO film is formed at a temperature exceeding 400 ° C. The temperature rise for obtaining the ohmic contact is performed during or after the FTO film is formed, and the upper limit is 700 ° C. If the FTO film is formed to have a thickness of 10 nm or more, the heat resistance of the transparent conductive film is improved. Even if the FTO film is maintained at a temperature exceeding 500 ° C. during the film formation, the electrical conductivity does not deteriorate and the initial state is maintained. However, if the film forming temperature of the FTO film is lower than 400 ° C., heating of the metal thin film layer becomes insufficient, and ohmic contact of the metal thin film layer cannot be achieved, so 400 ° C. is the lower limit.

  Since both the ITO film and the FTO film can be formed by the same SPD method, when the transparent conductor is made of the ITO film and the FTO film, the ITO film is formed and then continuously (without taking out the sample from the SPD film forming apparatus). Continuously, the temperature of the substrate is raised and heated to a predetermined temperature to form an FTO film.

  Since the metal thin film layer directly under the ITO film is heated by the heating when forming the FTO film in this way, ohmic contact is achieved, so there is no need to perform an annealing process for achieving ohmic contact in a separate process. Reduction of manufacturing process and manufacturing cost are expected.

The inhibition site was formed by patterning the transparent conductor. This inhibition site refers to a location where the thickness of the transparent conductor is thinner than its surroundings, or does not have a transparent conductor, or the proportion of the transparent conductor is less than the adjacent area. This patterning is performed by etching the transparent conductor.
The inhibition site is arranged so as to be substantially parallel to the n-side electrode as the second electrode. As a result, the transparent conductor formed by the inhibition portion that is substantially parallel to the n-side electrode is provided with a portion that forms an electric circuit communicating with the first conductivity type layer, and emits light at the edge of the portion that forms the electric circuit. Can do.
Moreover, the inhibition site is independent. Thereby, more portions for forming the electric circuit can be formed, and the light emission height can be further improved.
Moreover, the inhibition site may be continuous. Thereby, an inhibition site can be formed efficiently.
A plurality of inhibition sites are arranged. Thereby, the light emission intensity can be further improved.

  After forming the inhibition site in the transparent conductor, the p-side electrode and the n-side electrode are formed. The p-side electrode is formed at a predetermined site on the surface of the transparent conductor, but the n-side electrode cannot be provided on the other surface of the substrate when an insulating substrate such as sapphire is used as the substrate. Both the p-side electrode and the n-side electrode must be provided on one side where the compound layer, the metal thin film layer, and the transparent conductor are laminated. For this purpose, the transparent conductor, the metal thin film layer, the p-type contact layer, the p-type cladding layer, the light emitting portion, and the n-type cladding layer are etched to expose the n-type contact layer, and the n-side electrode is exposed to the exposed portion. Form.

To etch each layer, either wet etching or dry etching may be used. In wet etching, for example, a mixed acid of phosphoric acid and sulfuric acid can be used. In dry etching, for example, reactive ion etching, focused ion beam etching, ion milling, ECR (Electron Cyclotron Resonance) etching, and the like can be used. As reactive gas etching and ECR etching, CF ₄ , CCl are used. ₄ , SiCl ₄ , CClF ₃ , CClF ₂ , SF ₆ , PCl _{3, and} other gases can be used. In focused ion beam etching, B, Al, Si, Ga, Ge, In, or the like is used as a metal ion source. In ion milling, an inert gas such as Ar, Ne, or N ₂ can be used.

  In etching, an optimal etching method may be selected for each layer, and etching may be performed by masking each layer. However, since the light emitting area decreases as the number of photolithography increases, a gas containing chlorine gas, or A method of exposing a n-type contact layer by etching a transparent conductor, a metal thin film layer, a p-type contact layer, a p-type clad layer, a light emitting part, and an n-type clad layer at once using a gas containing bromine gas. preferable.

  The semiconductor light emitting element 1 configured as described above can be made nearly uniform by dispersing the flow of current to the light emitting portion by patterning the transparent conductor as shown by the arrow line in FIG. . FIG. 2 is a schematic cross-sectional view illustrating the flow of electricity into the light emitting unit.

[Example]
Next, a light emitting device according to an embodiment of the present invention was formed as follows.
Each GaN-based compound layer was formed on one surface of the sapphire substrate by metal organic vapor phase epitaxy (hereinafter referred to as MOVPE method). The source gas that is a component source of Ga, N, Si, Al, In, and Mg is that Ga is trimethylgallium (TMG) gas, N is ammonia (NH ₃ ) gas, and Si is monosilane (SiH ₄ ) gas. Al is trimethylaluminum (TMA) gas, In is trimethylindium (TMI) gas, Mg is biscyclopentadienylmagnesium (Cp ₂ Mg) gas, and hydrogen gas is used as a carrier gas.

First, a sapphire substrate 2 having one surface as a compound deposition surface was placed in a room temperature horizontal MOVPE apparatus, and heated while supplying hydrogen to perform thermal cleaning. Next, the sapphire substrate 2 was lowered to a desired temperature to deposit a GaN buffer layer 3. Thereafter, the sapphire substrate 2 provided with the GaN buffer layer 3 is heated, and an n-type GaN layer 4 having Si as a dopant is grown by flowing NH ₃ gas, TMG gas, SiH ₄ gas, and then NH ₃ gas, An n-type AlGaN layer 5 using Si as a dopant was formed by flowing TMG gas, TMA gas, and SiH ₄ gas.

  Next, the sample was heated and the light emitting portion 6 having a multiple quantum well (MQW) structure of GaN and AlGaN was grown on the outer surface of the n-type AlGaN layer 5 while intermittently flowing TMA gas.

Subsequently, NH ₃ gas, TMG gas, TMA gas, and Cp ₂ Mg gas are flowed to form a p-type AlGaN layer 7 using Mg as a dopant on the outer surface of the light emitting portion 6, and then NH ₃ gas, TMG A p-type GaN layer 8 using Mg as a dopant was formed by flowing a gas, Cp ₂ Mg gas. After the p-type GaN layer 8 was formed, Ni and Au were deposited in a thickness of 5 nm by an evaporation method to provide the metal thin film layer 9.

Next, the sample is transferred to the SPD method film forming apparatus, the metal thin film layer 9 is heated and held at 350 ° C., and the raw material compound for ITO film is sprayed on the outer surface of the metal thin film layer 9 by the SPD method to a thickness of 700 nm. After the ITO transparent conductive film and the ITO film were formed, the temperature was continuously raised to 400 ° C., and when the surface of the ITO film exceeded 380 ° C., the spraying of the raw material compound solution for forming the FTO film was started. A transparent conductor 10 was formed by forming an FTO film having a thickness of 100 nm.
The film formation by the SPD method was configured such that a chemical solution was sprayed from the lower part of the wafer of the light emitting element, and all was performed in the atmosphere. The ITO film is formed by spraying an ethanol solution of indium chloride (hydrate) and tin chloride (hydrate) onto a wafer heated to 350 ° C., and the amount of Sn added to In It mix | blended so that it might become 5at% by element ratio. The FTO film was formed by spraying a mixed solution of an ethanol solution of tin chloride (hydrate) and a saturated aqueous solution of ammonium fluoride onto a wafer heated to 400 ° C. At this time, the amount of ammonium fluoride added was 1.7 times the element ratio of F and Sn with respect to tin chloride (hydrate).

Thereafter, the surface of the transparent conductor 10 was masked, and patterning was performed by etching using zinc powder and hydrochloric acid. There are two types of patterning patterns, A type shown in FIG. 3 and B type shown in FIG. 4, and both the line width and pitch width were changed from 0.3 mm to 2 mm.
The A type semiconductor light emitting device 1A shown in FIG. 3 is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5 which is the main first conductivity type layer in the transparent conductor 10 and is parallel to the n-type electrode 12. By arranging a plurality of independent inhibition sites 20A, a plurality of transparent conductors 10A,... 10A are formed, and a p-side electrode 11 is attached to each of the transparent conductors 10A.
In FIG. 4, the B type semiconductor light emitting device 1 </ b> B is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5, which is the main first conductivity type layer, inside the transparent conductor 10, and parallel to the n-type electrode 12. By arranging a plurality of independent inhibition sites 20B each forming a continuous transparent conductor 10B, only one p-side electrode 11 is attached to the transparent conductor 10B.
And in order to implement | achieve the ohmic connection between the metal thin film layer 9 and the p-type GaN layer 8, heat processing was performed at 500 degreeC and 1 h in air | atmosphere.

  Next, in order to form the n-side electrode 12 on the peripheral portion of one surface of the n-type AlGaN layer 5 which is the main first conductivity type layer, the light-emitting portion 6 laminated on the n-side electrode 12 formation site, In order to remove the p-type AlGaN layer 7, the p-type GaN layer 8, the metal thin film layer 9, and the transparent conductor 10, a mask was formed on the transparent conductor 10. After forming the mask, the sample was transferred to an etching apparatus, and an etching gas was supplied to perform dry etching until the n-type AlGaN layer 5 was exposed.

  On the n-type AlGaN layer 5 exposed by dry etching, Al is deposited to a thickness of about 100 nm by a vapor deposition method to form an n-side electrode 12 and deposited on a part of the peripheral edge of the transparent conductor 10 from which the mask has been removed. Al was deposited to a thickness of about 100 nm by the method to form the p-side electrode 11.

  The wafers thus laminated were diced into 5 mm × 10 mm squares to form bare chips. Then, this bare chip was mounted on the stem by die bonding and wired by wire bonding to obtain the light emitting elements 1A and 1B, respectively.

  Then, the light emission test was done about two types of light emitting elements 1A and 1B and the light emitting element of the comparative example which were obtained, respectively, and the light emission intensity was compared. The measurement results are shown in Table 1. The emission intensity was set to 1 when the transparent conductor was not patterned.

  As shown in Table 1, by patterning the transparent conductor, it was possible to promote the diffusibility of the current flowing into the light emitting portion and increase the current passing through the pn junction. In addition, the luminous efficiency of the pn junction constituting the element that contributes to light emission is improved without being biased in the element plane, so that the emission intensity in the plane of the semiconductor light emitting element can be made uniform, and the emission luminance can be improved. did it. In addition, the emission intensity is improved as the line width and pitch width are reduced, and the emission intensity is more than doubled compared to the case where the transparent conductor is not patterned by making the line width and pitch width 1 mm or less. became.

5 and 6 show the relationship between the position of the transparent conductor and the light emission intensity when the line width and the pitch width are 2 mm, 1 mm, and 0.3 mm, respectively.
As shown in FIGS. 5 and 6, in the case of Example 1 (A type), there was almost no difference in strength depending on the position of the transparent conductor regardless of the line width and the pitch width. On the other hand, in the case of Example 2 (B type), it became darker as the position of the transparent conductor became farther from the electrode.
Moreover, when the line width and the pitch width were 2 mm, each type had a light emission form in which several linear light emitting portions were arranged. In addition, when the line width and the pitch width were 1 mm, both types showed a bright part and a dark part, but it seemed that almost the entire surface was shining. Furthermore, when the line width and the pitch width are 0.3 mm, Example 1 (A type) appears to shine evenly over the entire surface, whereas Example 2 (B type) is from the counter electrode. It seemed to fade out gradually as the distance increased.

  In addition, the patterning of the transparent conductor 10 in the present invention is not limited to the A type and the B type, but can be as shown in FIGS. In the following description, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof is omitted. Unless otherwise specified, the other portions are also the same.

  The C-type semiconductor light emitting device 1C shown in FIG. 7 is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5 which is the main first conductivity type layer in the transparent conductor 10 and is parallel to the n-type electrode 12. By arranging a plurality of independent inhibition sites 20C, a continuous comb-like transparent conductor 10C is formed, and only one p-side electrode 11 is attached to the transparent conductor 10C.

  The D-type semiconductor light emitting device 1D shown in FIG. 8 is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5 which is the main first conductivity type layer in the transparent conductor 10, and is parallel to it. By arranging a plurality of independent inhibition sites 20D, a continuous lattice-shaped transparent conductor 10D is formed, and only one p-side electrode 11 is attached to the transparent conductor 10D.

  The E-type semiconductor light emitting device 1E shown in FIG. 9 is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5 which is the main first conductivity type layer in the transparent conductor 10, and is inclined. By arranging a plurality of independent inhibition sites 20E that are parallel to each other, a plurality of transparent conductors 10E... 10E are formed, and the p-side electrode 11 is attached to each of the transparent conductors 10E.

  The F-type semiconductor light emitting device 1F shown in FIG. 10 is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5 which is the main first conductivity type layer inside the transparent conductor 10, and is inclined. The plurality of independent inhibition sites 20F that are substantially parallel to each other are arranged to form a plurality of transparent conductors 10F... 10F, and the p-side electrode 11 is attached to each of the transparent conductors 10F. .

  A G-type semiconductor light emitting device 1G shown in FIG. 11 is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5 which is the main first conductivity type layer inside the transparent conductor 10, and is wavy. By arranging a plurality of independent inhibition sites 20G in parallel, a plurality of transparent conductors 10G... 10G are formed, and a p-side electrode 11 is attached to each of the transparent conductors 10G.

  The H-type semiconductor light emitting device 1H shown in FIG. 12 is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5 which is the main first conductivity type layer in the transparent conductor 10 and is parallel to the n-type electrode 12. A plurality of transparent conductors 10H... 10H are formed by arranging the continuous inhibition sites 20H formed, and the p-side electrode 11 is attached to each of the transparent conductors 10H.

  The I-type semiconductor light emitting device 1I shown in FIG. 13 is separated from the n-side electrode 12 disposed in contact with the n-type AlGaN layer 5 which is the main first conductivity type layer in the transparent conductor 10, and is parallel to the n-type electrode 12. In addition, by arranging a plurality of independent inhibition sites 20I having different depths, a plurality of transparent conductors 10I... 10I are formed, and the p-side electrode 11 is attached to the transparent conductor 10I. .

  The patterning of the semiconductor light emitting device according to the present invention has been exemplified and described above. However, the patterning of the semiconductor light emitting device according to the present invention is not limited to the above examples, and the inhibition site is the second electrode. If it is arranged so as to be substantially parallel to the n-side electrode, is independent or continuous, and a plurality of electrodes are arranged, various modifications can be made.

  The present invention can be applied as a light emitting element of a light emitting device such as a high brightness LED.

It is sectional drawing which shows an example of embodiment of the semiconductor light-emitting device based on this invention. It is a schematic sectional drawing explaining the inflow of the electricity to the light emission part which comprises the semiconductor light-emitting device based on this invention. It is a top view explaining the 1st patterning of a transparent conductor. It is a top view explaining the 2nd patterning of a transparent conductor. It is a figure which shows the relationship between the position of the transparent conductor in the structure of FIG. 3, and emitted light intensity. It is a figure which shows the relationship between the position of the transparent conductor in the structure of FIG. 4, and emitted light intensity. It is a top view explaining the 3rd patterning of a transparent conductor. It is a top view explaining the 4th patterning of a transparent conductor. It is a top view explaining the 5th patterning of a transparent conductor. It is a top view explaining the 6th patterning of a transparent conductor. It is a top view explaining the 7th patterning of a transparent conductor. It is a top view explaining the 8th patterning of a transparent conductor. It is a schematic sectional drawing explaining the 9th patterning of a transparent conductor. It is sectional drawing which shows the conventional semiconductor light-emitting device. It is a schematic sectional drawing explaining the flow of electricity to the light emission part which comprises the conventional semiconductor light-emitting device. It is a figure which shows the relationship between the position of the transparent conductor in conventional structure, and emitted light intensity.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor light emitting element, 5 1st conductivity type layer, 6 Light emission part, 7 2nd conductivity type layer, 9 Metal thin film layer, 10 Transparent conductor, 11 1st electrode (p side electrode), 12 2nd electrode (n side) Electrode), 20 site to inhibit.

Claims (6)

A laminate formed by arranging the first conductivity type layer and the second conductivity type layer via the light emitting part;
A metal thin film layer disposed on the outer surface of the second conductivity type layer forming the laminate;
A transparent conductor disposed on the outer surface of the metal thin film layer;
A first electrode disposed on a part of the outer surface of the transparent conductor;
A second electrode disposed in contact with the first conductivity type layer at a position not overlapping the light emitting portion, the second conductivity type layer, the metal thin film layer, and the transparent conductor;
A light emitting device comprising at least
The transparent conductor is arranged such that a portion that inhibits at least a part of the current flowing between the first electrode and the second electrode is spaced apart from the second electrode. A semiconductor light emitting device.   The semiconductor light-emitting element according to claim 1, wherein the portion is disposed so as to be substantially parallel to the second electrode.   The semiconductor light-emitting element according to claim 1, wherein the portions are independent.   The semiconductor light-emitting element according to claim 1, wherein the portions are continuous.   The semiconductor light emitting element according to claim 3, wherein a plurality of the parts are arranged. The semiconductor light-emitting element according to claim 1, wherein the transparent conductor is thinner than the periphery of the portion.

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