JP2007101985A - Method of manufacturing electro-optical device, method of inspecting electro-optical device, and inspecting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an electro-optical device capable of preventing the occurrence of poor development of a resin layer by measuring a light reflectivity in an exposed area of a light reflecting film formed by removing the resin layer by development to properly determine a replacement time of a developer, and to provide a method of inspecting the electro-optical device. <P>SOLUTION: The method of manufacturing the electro-optical device provided with the resin film on a substrate includes; a light reflecting film forming step of forming the light reflecting film on the substrate; an applying step of applying a photosensitive resin material so as to overlap the light reflecting film to form the resin layer; an exposure step of performing pattern exposure of the resin layer; a developing step of forming the resin film into a predetermined shape by applying the developer to the resin layer to expose at least a part of the light reflecting film; and a light reflectivity measuring step of measuring the light reflectivity in the exposed region of the light reflecting film. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to an electro-optical device manufacturing method, an electro-optical device inspection method, and an inspection device.
In particular, by measuring the light reflectance in the exposed area of the light reflecting film formed by removing the resin layer by development, it is possible to appropriately determine the replacement time of the developer and to cause development failure of the resin layer. The present invention relates to an electro-optical device manufacturing method, an electro-optical device inspection method, and an inspection device used therefor.

2. Description of the Related Art Conventionally, a liquid crystal device that is one embodiment of an electro-optical device is configured by disposing a pair of substrates each having an electrode, and disposing a liquid crystal material between the pair of substrates. In this liquid crystal device, an image is displayed by applying a voltage to opposing electrodes to align a liquid crystal material and deflecting light passing therethrough.
Here, when such a liquid crystal device is used as a color display liquid crystal device, a method of forming a color image by forming a color filter layer made of a colored resin material at a predetermined position on a glass substrate is used. Yes.
This color filter layer is generally formed by applying a predetermined patterning process to a photosensitive resin material in which pigments such as R (red), G (green), and B (blue) are dispersed. Depending on the size, desired image characteristics can be obtained.
However, when such a color filter layer forming process is applied to a mass production line for continuous production, the patterning processing accuracy decreases due to changes over time in the developer used in the development process, etc. The case where shape defect was generated was seen. In addition, with the recent improvement in image quality, such processing accuracy has been required to have a higher level of accuracy than in the past.

Therefore, in order to solve such problems in processing accuracy, a developer management method for irradiating the developer with light of a predetermined wavelength and determining the update timing of the developer from the absorption spectrum of the transmitted light, and to it A developing solution management apparatus is disclosed. (For example, see Patent Document 1)
More specifically, an acrylic group (CH ₂ ═CH—), a hydrocarbon group (CH ₃ —CH═), another hydrocarbon group (—CH ₂ —) contained in the resist eluted in the developer. O-CH _2- ) is a developer management method for managing the use limit of the developer by comparing the absorption spectrum intensity obtained from the above with a preset use limit intensity. With such a developer management method, the transmittance of the developer is measured in real time, and the update timing of the developer is managed.
JP-A-5-333561 (Claims)

However, since the method described in Patent Document 1 is a developer management method, when the type of resin material and the usage environment thereof change, the developer renewal time is not necessarily an appropriate time. There were cases where it was not possible.
For example, as a kind of resin material, when a resin material whose solubility in a developing solution is sensitive to temperature is used, even if it is used in a temperature range where the solubility is high, the solubility is low. Since it is necessary to set the use limit point in consideration of the case where it is used in the temperature range, it has been necessary to replace the developer considerably before the use limit in the use environment.
Further, since it is necessary to measure an absorption spectrum of a predetermined hydrocarbon group as a management method, it has been necessary to use a large and expensive measuring device capable of measuring a wide wavelength region from visible light to ultraviolet light.

Accordingly, as a result of intensive studies, the inventors of the present invention have appropriately determined the replacement time of the developer by measuring the light reflectance in the exposed region of the light reflecting film formed by removing the resin layer by development. Thus, the inventors have found that the development state of the resin layer can be prevented by always fixing the development state, and the present invention has been completed.
That is, the present invention measures the reflection intensity from the light reflection film and indirectly measures the amount of the residue remaining in the region, so that the material of the resin material and the use environment seem to have changed. Even in such a case, it is an object to provide a method for manufacturing an electro-optical device and a method for inspecting the electro-optical device that appropriately determine the replacement time of the developer and ensure a uniform development state.

According to the present invention, in the electro-optical device manufacturing method, the light reflecting film forming step for forming the light reflecting film on the substrate, and the photosensitive resin material is applied so as to overlap the light reflecting film. Forming a resin film having a predetermined shape by applying a developer to the resin layer, and applying at least a part of the light reflecting film. And a developing step for exposing, and further comprising a light reflectance measuring step for measuring a light reflectance in at least a part of the region where the light reflecting film is exposed. Provided and can solve the above-mentioned problems.
That is, by measuring the light reflectance with respect to the exposed region of the light reflecting film after development and measuring the amount of residue remaining in the exposed region, for example, the amount of resist residue, the development state of the resin layer can be simplified and simplified. An electro-optical device that can be managed with high accuracy and has high processing accuracy of the resin layer can be manufactured.

In carrying out the present invention, when the absorption wavelength in the resin layer is in the visible light region, it is preferable that the incident light for measuring the light reflectance is visible light.
By implementing in this way, the light absorption efficiency in a resin layer can be raised and the measurement precision of a light reflectance can be improved.
Moreover, a highly versatile visible light source can be used as the light source, and the measuring apparatus can be simplified.

Moreover, when implementing this invention, it is preferable to make the equivalent circle diameter of the incident light spot for measuring a light reflectance into the value within the range of 1-100 (micrometer).
By carrying out in this way, the spot diameter of incident light can be made equal to or less than the area of the exposed region of the light reflecting film, and highly accurate light reflectance measurement reflecting only information from the exposed region Can do.

Moreover, when implementing this invention, it is preferable to implement light reflectivity measurement in several places in a substrate surface.
By carrying out in this way, the development state of the resin layer can be inspected including the in-plane distribution, and the developer replacement time can be determined with higher accuracy.

In carrying out the present invention, it is preferable to include a baking step of baking the resin film after the developing step.
By carrying out in this way, the light reflectance measurement in the present invention can be carried out even after firing, and the development state of the resin layer can be managed with higher accuracy in combination with the light reflectance measurement after development. Therefore, it is possible to appropriately determine the replacement time of the developer.

In carrying out the present invention, it is preferable to include a blowing step for removing moisture remaining on the surface after the development step.
By carrying out in this way, for example, irregular reflection of light due to moisture such as a rinse solution after completion of development can be prevented in advance, and highly accurate light reflectance measurement can be performed.

Moreover, when implementing this invention, it is preferable to include the dimension measurement process for measuring the dimension of a resin film after a image development process.
By carrying out in this way, as a method for inspecting the development state of the resin layer, by using both the light reflectance measurement and the dimension measurement, the measurement accuracy can be improved, and the developer replacement time can be changed, Furthermore, it can be judged appropriately.

Moreover, when implementing this invention, it is preferable to include the test | inspection process which test | inspects the predetermined state of a developing solution based on the measurement result obtained at the light reflectivity measurement process.
By carrying out in this way, it is possible to detect early when a development failure due to the developer occurs, and to minimize the occurrence of defective products.

In carrying out the present invention, it is preferable to replace the developer when the light reflectance becomes less than 90% in the inspection step.
By carrying out in this way, it is possible to quantitatively determine the replacement time of the developing solution, and further, it is possible to construct an automated system that links this light reflectance measurement and the replacement of the developing solution.

  According to another aspect of the present invention, in an inspection method for an electro-optical device including a resin film on a substrate, a light reflecting film forming step for forming the light reflecting film on the substrate overlaps the light reflecting film. In this way, a photosensitive resin material is applied to form a resin layer, an exposure process for pattern exposure to the resin layer, and a resin film having a predetermined shape by applying a developer to the resin layer A developing step for exposing at least a part of the light reflecting film, and a light reflectance measuring step for measuring the light reflectance in at least a part of the region where the light reflecting film is exposed, and Based on the measurement results obtained in the light reflectivity measurement process, it includes an inspection process for inspecting the predetermined state of the developer, and when the light reflectivity is less than 90%, the developer is replaced. An inspection method for an electro-optical device

  According to still another aspect of the present invention, there is provided an inspection apparatus for measuring a light reflectance of a region where a light reflection film is exposed in an electro-optical device substrate, wherein the relative relationship between the electro-optical device substrate and incident light is measured. From alignment means for aligning positions, adjustment means for adjusting the spot diameter of incident light, detection means for detecting incident light and reflected light from the light reflecting film, and detection means, respectively An inspection apparatus comprising: a calculation means for calculating a result obtained; and a display means for displaying the result obtained from the calculation means.

[First Embodiment]
According to a first embodiment of the present invention, in a method of manufacturing an electro-optical device including a resin film on a substrate, a light reflecting film forming step for forming the light reflecting film on the substrate overlaps the light reflecting film. As described above, a coating process for forming a resin layer by applying a photosensitive resin material, an exposure process for pattern exposure to the resin layer, and a resin film having a predetermined shape by applying a developer to the resin layer And a developing step for exposing at least a part of the light reflecting film, and further including a light reflectance measuring step for measuring the light reflectance in at least a part of the region where the light reflecting film is exposed. This is a method for manufacturing an electro-optical device.
Hereinafter, as a method for manufacturing the electro-optical device according to this embodiment, a method for manufacturing a liquid crystal device including an element substrate having a TFD (Thin Film Diode) element structure and a counter substrate having a color filter layer is taken as an example. A description will be given with reference to FIGS. However, this embodiment shows one aspect of the present invention, and does not limit the present invention, and can be arbitrarily changed within the scope of the present invention.
That is, the light reflecting film and the color filter layer may be formed on the element substrate side, and further, a structure using a TFT (Thin Film Transistor) as the switching element may be employed.

1. Liquid Crystal Device (1) Basic Configuration First, a liquid crystal device manufactured by the method for manufacturing a liquid crystal device according to the present embodiment will be described.
Here, FIG. 1 shows a cross-sectional view of the liquid crystal device 10, and FIG. 2 shows a schematic perspective view showing the appearance of the liquid crystal device 10.
As shown in these drawings, the liquid crystal device 10 is a liquid crystal device 10 including an element substrate 60 having an active matrix structure using a TFD element 69 which is a two-terminal nonlinear element as a switching element, Although not shown, a lighting device such as a backlight and a front light, a case body, and the like are appropriately attached and used as necessary.
In the liquid crystal device 10, an element substrate 60 having a glass substrate or the like as a base 61 and a counter substrate 30 similarly having a glass substrate or the like as a base 31 are disposed opposite to each other and a sealing material 23 such as an adhesive is interposed therebetween. Are pasted together. In addition, the space formed by the element substrate 60 and the counter substrate 30, the liquid crystal material 21 is injected into the inner portion of the sealing material 23 through the opening 23 a, and then sealed with the sealing material 25. It has a cell structure that is stopped. That is, the liquid crystal material 21 is filled between the element substrate 60 and the counter substrate 30.

  A plurality of counter electrodes 33 arranged in a stripe shape are formed on the inner surface of the base 31 of the counter substrate 30, that is, on the surface facing the element substrate 60. On the other hand, a plurality of pixel electrodes 63 arranged in a matrix are formed on the inner surface of the base 61 of the element substrate 60, that is, on the surface facing the counter substrate 30. The pixel electrode 63 is electrically connected to the data line 65 via a TFD element 69 as a switching element, and the other counter electrode 33 is connected via a sealing material 23 containing conductive particles. It is electrically connected to the lead wiring 66 on the element substrate 60. The pixel electrode 63 and the counter electrode 33 configured as described above constitute a large number of pixels in which the intersecting regions of the counter electrode 33 are arranged in a matrix (hereinafter, may be referred to as a pixel region). As a whole, the display area A is configured.

The element substrate 60 has a substrate overhanging portion 60T that projects outward from the outer shape of the counter substrate 30. On the substrate overhanging portion 60T, a part of the data line 65 and the routing wiring 66 are provided. An external connection terminal 67 is formed which includes a part and a plurality of independently formed wirings. A driver IC (driving semiconductor element) 91 incorporating a liquid crystal driving circuit or the like is mounted on the end of the data line 65 or the routing wiring 66. Further, the driver IC 91 is electrically connected to one end of the external connection terminal 67, and the other end of the external connection terminal 67 is electrically connected to the flexible circuit board 93 and the like. Yes.
In the liquid crystal device 10 configured as described above, a driving signal from the driver IC 91 is output to the pixel electrode 63 via the data line 65 and the TFD element 69, and the scanning signal is opposed via the lead wiring 66. Output to the electrode 33. Since an electric field is generated in the liquid crystal material 21 of the pixel to which the voltage is applied, light can be passed through or not allowed to pass through the liquid crystal material 21 in the pixel. Can be displayed.

(2) Counter substrate (color filter substrate)
The counter substrate 30 has a light reflecting film 79, a color filter layer 37, a counter electrode 33, a layer thickness adjusting layer 41 for optimizing retardation, an alignment film 45 on a base 31 made of glass or the like. Is a substrate mainly comprising
Here, the counter electrode 33 is a scanning electrode formed in a stripe shape by ITO (indium tin oxide) or the like. Further, a color filter layer 37 as a color filter element such as R (red), G (green), and B (blue) is provided below the counter electrode 33 so as to correspond to the pixel electrode 63 on the element substrate 60 side. Is arranged. A light reflection film 79 made of a light reflective material such as Al (aluminum), Ag (silver), or the like is formed in a region below the color filter layer and corresponding to the reflection region R. A black matrix, that is, a light shielding film 39 is provided as a color mixture prevention region between adjacent colors at a position adjacent to the color filter layer 37 and not facing the pixel electrode 63.

(3) Element Substrate The element substrate 60 basically includes a base 61 made of a glass substrate, a pixel electrode 63, a data line (not shown), a lead wiring 66, and a TFD as a switching element. And an element 69. In addition, an alignment film 85 made of polyimide resin or the like is formed on the pixel electrode 63. Further, a retardation plate (¼ wavelength plate) 87 and a polarizing plate 89 are disposed on the outer surface of the base 61.

FIG. 3 shows a schematic plan view of the element substrate 60 viewed from the direction perpendicular to the substrate surface. In FIG. 3, an alignment film, a polarizing plate, and the like are omitted.
In the element substrate 60, the data line 65 is composed of a plurality of wirings arranged in a stripe pattern, and the pixel electrodes 63 are arranged in a matrix between the data lines 65. The pixel electrode 63 is electrically connected to the data line 65 via a TFD element 69 described later. The data line 65 is electrically connected at one end side to the driver IC 91 mounted on the substrate extension 60T so that a driving signal from the driver IC 91 can be output to the pixel electrode 63. It is configured.
Since the data line 65 is formed simultaneously with the formation of a TFD type element described later from the viewpoint of simplifying the manufacturing process, for example, a tantalum layer, a tantalum oxide layer, and a chromium layer are sequentially formed. . The pixel electrode 63 is formed using a transparent conductive material such as ITO (indium tin oxide) or IZO (indium zinc oxide).

In addition, as shown in FIG. 1, the TFD element 69 includes an element first electrode 71 made of a tantalum (Ta) alloy, an insulating film 72 made of tantalum oxide (Ta ₂ O ₅ ), and an element made of chromium (Cr). It has a sandwich structure in which the second electrode 73 is sequentially laminated. The diode switching characteristics in the positive and negative directions are provided, and a rectifying characteristic that is brought into a conductive state when a voltage equal to or higher than the threshold is applied between both terminals of the element first electrode and the element second electrode is provided.

The lead wiring 66 is formed along two sides extending in a direction perpendicular to the side where the driver mounting area exists. The routing wiring 66 is electrically connected to each counter electrode of the opposing color filter substrate on one end side via conductive particles included in the sealing material. Further, the multi-end side is electrically connected to the driver IC 91, and is configured to output a scanning signal from the driver IC 91 to the counter electrode.
The routing wiring 66 may be formed using a metal material such as a tantalum layer, a tantalum oxide layer, and a chromium layer, or a transparent conductive material such as ITO (indium tin oxide) or IZO (indium zinc oxide). it can.

2. Manufacturing method 2-1. Manufacturing method of counter substrate (1) Formation process of light reflection film and the like First, a formation process of the light reflection film and the like shown as S1 in FIG. 4 is performed. As shown in FIGS. 5A to 5B, the light reflecting film and the like are formed by a step of forming a resin scattering layer 78 as an underlayer for forming an uneven shape on the light reflecting film. A step of depositing a metal having high light reflectivity such as Al or Ag on the resin scattering layer 78 by sputtering or the like and then patterning the deposited film to form a matrix-like light reflection film 79; Composed.

First, as shown in FIG. 5A, a resin scattering layer 78 is formed by applying a photosensitive resin material on a substrate 31 and then performing a predetermined patterning process. At this time, as a method of forming a concavo-convex shape on the surface of the resin scattering layer 78, for example, it is preferable to perform exposure with different exposure amounts partially using, for example, multistage exposure or a halftone mask.
This is because it is possible to obtain a concavo-convex shape with high processing accuracy by changing the conditions such as the exposure amount that allow easy fine adjustment.
Next, as shown in FIG. 5B, a metal having high light reflectivity is deposited on the base 31 provided with the resin scattering layer 78 by sputtering or the like, and then a predetermined patterning process is performed. As a result, a light reflecting film 79 having an uneven surface is formed.
In forming the light reflecting film 79, the light reflecting film 79 can be formed directly on the base 31 without forming the resin scattering layer 78 as a base layer. In this case, when the light reflecting film 79 is patterned, the above-described method of adjusting the exposure amount using a multistage exposure or a halftone mask is used, as in the case where the resin scattering layer 78 is formed. A concavo-convex shape can be formed on the surface.

In the present invention, since it is necessary to measure the light reflectance of the light reflecting film, depending on the size and shape of the unevenness, there may be a case where noise is an obstacle to measurement in the light reflectance measuring step described later. . In such a case, for example, by forming a concavo-convex shape only in a region other than the light reflection film exposed region, or by matching the position of the reflected light detector with the reflection angle from the concavo-convex shape, Even with the light reflecting film, it is possible to accurately inspect the developed state of the resin layer by appropriately measuring the light reflectance.
Therefore, if it is a liquid crystal device provided with such a light reflection film, a resin layer can be formed with high accuracy while adjusting the viewing angle to a desired angle, and a liquid crystal device having excellent image characteristics can be obtained.

(2) Light-shielding film forming step Next, a light-shielding film forming step shown as S2 in FIG. 4 is performed. The light shielding film forming step is a step of forming a light shielding film 39 as a color mixing prevention film for preventing color mixing between the respective pixel regions, as shown in FIG.
As a material used for the light shielding film 39, for example, a metal film such as chromium (Cr) or molybdenum (Mo) is used, or color filter materials of three colors of R, G, and B are used together with resin or other materials. What was disperse | distributed in the base material, what disperse | distributed color filter materials, such as a black pigment and dye, in resin and another base material, etc. can be used.
For example, in the case of forming the light shielding film 39 using a metal film, a metal material such as chromium (Cr) is stacked on the base 31 by a sputtering method or the like, and is then etched according to a predetermined pattern. can do.

(3) Color Filter Layer Formation Step Next, a color filter layer formation step shown as S3 in FIG. 4 is performed. The color filter layer forming step is a step of forming the color filter layer on the base 31 of the counter substrate 30 as shown in FIGS.
More specifically, a coating step S3-1 for forming a resin layer by coating a photosensitive resin made of a resin material in which a color filter material such as a pigment or a dye is dispersed so as to overlap the light reflection film; An exposure step S3-2 for performing pattern exposure on the resin layer, a development step S3-3 for applying a developer to the resin layer to form a resin film having a predetermined shape, and exposing a part of the light reflection film, In order to stabilize the shape by thermally shrinking the resin film, the light reflectance measurement step S3-4 for performing the light reflectance measurement on the exposed region, the inspection step S3-5 for inspecting the measurement result Calcination step S3-6.
That is, when this color filter layer is composed of, for example, three colors of R (red), G (green), and B (blue), the formation process of this color filter layer is a total of 3 for each color. Will be repeated.

(3) -1 Application Step First, the application step shown as S3-1 in FIG. 4 is performed. As shown in FIG. 6A, this coating step is a step of forming a resin layer 37X by coating a photosensitive resin material in which a predetermined pigment is dispersed so as to overlap the light reflecting film 79. At this time, as the type of the photosensitive resin material to be used, any of a positive type in which the exposed portion is solubilized in the developer and a negative type in which the exposed portion is insolubilized can be suitably used. In this embodiment, the case where a positive type is used will be described as an example.
The thickness of the resin layer 37X can be changed according to the type of pigment and the exposure conditions, and is not particularly limited. However, if the thickness is excessively thin, sufficient chromaticity can be obtained. On the contrary, if it is thick, workability may be reduced in the development step described later. Therefore, the thickness of the resin layer is preferably set to a value within the range of 0.1 to 10 (μm), and more preferably set to a value within the range of 1 to 5 (μm).

(3) -2 Exposure Step Next, an exposure step shown as S3-2 in FIG. 4 is performed. In this exposure process, as shown in FIG. 6B, the resin layer 37X is partially irradiated by irradiating energy rays L such as i-line through a photomask 111 disposed above the substrate 31. This is a step of exposing and pattern exposure.
At this time, it is preferable to perform a multistage exposure in which a halftone mask having partially different light transmittance is used as the photomask 111 or a plurality of exposures are performed while changing the irradiation intensity of the energy beam L.
This is because the exposure amount can be made different with respect to the depth direction of the resin layer 37X, and a fine step can be formed on the surface thereof.
Therefore, when the resin layer is a color filter layer, a color filter layer having a chromaticity adjustment unit for adjusting the density of chromaticity can be obtained by partially changing the thickness.
Further, it is preferable that at least a part of the chromaticity adjusting portion is formed so that the underlying light reflection film is exposed.
This is because the chromaticity adjusting unit can be used as the light reflection film exposed region 37a for measuring the light reflectance in the present invention, and the pattern design can be simplified. When such a pattern design is difficult, a test pattern for measuring light reflectance can be formed as a TEG pattern in a portion outside the display area.

(3) -3 Development Step Next, the development step shown as S3-3 in FIG. 4 is performed. As shown in FIG. 6C, the developing step is a step of applying a predetermined developing solution D to the resin layer on which the latent image is formed to form a pattern and forming a resin film 37 having a predetermined shape. is there. At this time, as shown in FIG. 6C, the developer D may be dropped while moving the slit-like nozzle 42 in parallel with the substrate plane, and a shower nozzle is installed above the center of the substrate. Then, it may be dropped in the form of a mist.
Moreover, it is preferable to provide the circulation path 50 for collect | recovering the developing solution D and using it repeatedly in this image development process. The circulation path 50 is provided with a filter for removing the eluted resin material, and can be used repeatedly while maintaining a predetermined level of quality. However, when the developer is circulated and used repeatedly in this way, the resin dissolving ability of the developer may gradually decrease, causing problems in resin film formation. It is necessary to judge.

Moreover, it is preferable to include the blow process for removing the water | moisture content which remained on the surface after completion | finish of this image development process.
The reason for this is that moisture remains on the surface, preventing incident light from being irregularly reflected in the subsequent light reflectance measurement step and adversely affecting the light reflectance value.

(3) -4 Light Reflectance Measurement Step Next, a light reflectance measurement step shown as S3-4 in FIG. 4 is performed. In this light reflectance measurement step, incident light (i) having intensity (I ₀ ) is irradiated on the exposed region 37a where the light reflecting film shown in FIG. 6C is exposed, and the reflected light (r) This is a step of measuring the intensity (I _r ). That is, when the developer is repeatedly used, this is a step for detecting a decrease in the resin dissolving ability of the developer.
Here, the correlation between the change in the light reflectance and the resin dissolving ability of the developer will be described.
First, FIG. 7A schematically shows a state of development of the resin layer in the exposed region as a cross-sectional view and a plan view when a developer having sufficient resin dissolving ability is used.
That is, when a developer having sufficient resin dissolving ability is used, the amount of the resist residue 43 that is a residue of the resin material after development is small on the exposed region 37a. The ratio of reflected light intensity (I _r ) to incident light intensity (I ₀ ) (I _r / I ₀ ) × 100 (%), that is, light reflectance, which is small in the amount of light absorption and diffusely reflected light ( _{r ′} ). (%) Is relatively high.
On the other hand, as shown in FIG. 7B, when a developing solution having a reduced resin solubility is used, the amount of resist residue 43 increases, so that the amount of light absorption and the amount of irregular reflection by the resist residue 43 increase. and, the light reflectance _{(I r / I 0) ×} 100 (%) becomes a relatively reduced.

In order to explain this relationship in more detail, FIG. 8 is a characteristic diagram showing the relationship between the usage frequency of the developer and the resin solubility. In the characteristic diagram shown in FIG. 8, the horizontal axis indicates the number of substrates subjected to development processing (relative value), and the vertical axis indicates the light reflectance (%) in the exposed region where the light reflecting film is exposed. Yes. Moreover, the straight line A and the straight line B have shown the approximate expression of the data obtained from the material A and the material B, respectively.
As can be understood from the characteristic diagram shown in FIG. 8, there is a linear function relationship between the usage frequency of the developer and the change in the light reflectance, and the inclination depends on the material of the resin material. I can say that.
That is, by carrying out this light reflectance measurement, the resin dissolving ability of the developer can be properly managed, the development failure can be prevented, and the developer can be replaced at an appropriate time. .
Note that, on the horizontal axis of this characteristic diagram, the number of processed substrates is taken as an index indicating the usage status of the developer. For example, the developer may be changed such as the amount of change in the pattern line width or the inclination angle in the cross section. If the index reflects the development state, the same tendency is shown.

In carrying out this light reflectance measurement, it is preferable to measure using a light reflectance measuring instrument 200 as an example of an inspection apparatus as shown in FIG.
The light reflectivity measuring instrument 200 mainly includes an alignment unit 220 for aligning the relative positions of the electro-optical device substrate and the incident light, an adjustment unit 230 for adjusting the spot diameter of the incident light, and an incident. It comprises a detection means 240 for detecting light and reflected light, a calculation means 210 for calculating the result obtained from the detection means, and a display means 250 for displaying the result obtained from the calculation means. In the following, description will be made sequentially for each component.

First, as shown in FIG. 9, the alignment unit 220 includes a stage 211 for placing the substrate 31 as a measurement object, and a driving unit 209 for driving the stage 211. That is, by appropriately moving the stage 211 in the XYZ directions by the driving unit 209, the light reflectance at a predetermined position can be measured.
When performing the light reflectance measurement using such alignment means 220, it is preferable to perform the light reflectance measurement at a plurality of locations in the substrate surface.
This is because the above-described development process may cause in-plane distribution unevenness depending on the development method. Therefore, when the spray nozzle method that sprays the developer from the upper center of the substrate is adopted, it is preferable to take a distribution from the center of the substrate to the outside. It is preferable to take a distribution toward the edge.

The adjusting unit 230 is a light beam adjusting unit for adjusting the spot diameter of incident light, and includes an optical system such as a light source, a lens, and a mirror.
More specifically, as shown in FIG. 9, a light source 201, a parallel lens 203 for converting scattered light emitted from the light source 201 into parallel light, and the direction of the object to be measured and incidence of the parallel light. A first half mirror 204 for branching in the direction of the photodetector 207 and a condensing light for condensing the parallel light transmitted through the first half mirror 204 on the exposed region 37a that is a measurement object. The lens 206 and the second half mirror 205 for guiding the reflected light from the exposed region 37a toward the reflected light detector 208 are configured.

The wavelength of the light emitted from the light source 201 can be appropriately selected according to the characteristics of the measurement object. However, as shown in the present embodiment, the measurement is performed on the color filter layer. In this case, it is preferable that the wavelength is about 400 to 700 (nm) which is a visible light region.
This is because the color filter layer has an absorption wavelength in the visible light region, and therefore, by using light in the vicinity of the visible light region, measurement with higher sensitivity can be performed.
Also. When the measurement target is a transparent resin, visible light cannot be used as incident light. Therefore, it is possible to increase the sensitivity to a specific wavelength by using a wavelength in a short wavelength region such as ultraviolet light or by partially dispersing a light emitting material in a resin.
In this case, by attaching a monochromator 202 for making the light of a specific wavelength monochromatic at the tip of the light source 201, only a specific wavelength can be extracted and emitted.

Moreover, when condensing this incident light on a measuring object, it is preferable to make the equivalent circle diameter of the spot diameter into a value within the range of 1 to 100 (μm).
This is because by setting the spot diameter to be smaller than the exposed area 37a, only information from the measurement area can be reflected, and the measurement accuracy can be increased. However, since the spot diameter has a size corresponding to the wavelength of the incident light, it is difficult to set the spot diameter to a predetermined size or less when the incident light is specified.
Accordingly, the equivalent circle diameter of the incident light spot is preferably 5 to 80 (μm), more preferably 20 to 50 (μm).

The detection means 240 includes an incident light detector 207 for receiving incident light (i) guided by the half mirror 204, and a reflected light detector for receiving reflected light (r) guided by the half mirror 205. 208.
Further, the detection means 240 is connected to a calculation means 210 for calculating the obtained detection result and calculating the reflectance, and a display means 250 for displaying the calculation result.
While measuring the light reflectance using the inspection apparatus 200 configured as described above, and performing an inspection process to be described later, it is possible to appropriately determine the replacement time of the developer, and always to make the development state constant, Occurrence of poor development of the resin layer can be prevented

(3) -5 Inspection Step Next, it is preferable to carry out an inspection step shown as S3-5 in FIG. This inspection step is a step of inspecting a predetermined state of the developer based on the numerical value of the light reflectance obtained by the above-described light reflectance measurement step.
More specifically, it is a step of determining whether or not the predetermined state of the developer, that is, whether the resin solubility is within an allowable range, using the characteristic diagram shown in FIG. For example, it is preferable to replace the developer when the light reflectance is less than 90%.
This is because, as described above, it can be determined that the higher the light reflectance, the higher the resin dissolving ability of the developer. Further, if the light reflectance is set too low, desired characteristics cannot be obtained depending on the material of the resin material.
Accordingly, the reference value of the light reflectance is preferably a value less than 92%, and more preferably a value less than 95%.

Moreover, it is preferable to implement the shape measurement process which measures the shape of a resin film accompanying this inspection process. This shape measurement step can be performed at any timing as long as it is after the development step, but is preferably performed in combination with this inspection step.
More specifically, as shown in FIGS. 10A to 10B, it is preferable to measure the opening width (L) and the line width (X) in the exposed region of the light reflecting film after development.
This is because the developer replacement time can be determined with higher accuracy by directly measuring the shape in addition to the above-described inspection by light reflectance measurement.
Further, by associating the measurement value obtained by this shape measurement step with the measurement value obtained by the light reflectance measurement step, the relationship between the change in light reflectance and the shape change can be uniquely determined. This is because even if a measurement error occurs in either one, this inspection process can be carried out normally.

In addition, as a criterion for determining the developer replacement time in the shape measurement step, a dimension measurement step for measuring the planar dimension of the resin film is performed, and the measurement value obtained in the dimension measurement step is defined as D ₁ (μm). When the target value is D ₂ (μm), the developer is preferably replaced when the value represented by | D ₁ −D ₂ | becomes 2 or more.
The reason for this is that the change in pattern dimensions changes without depending on the pattern size. Therefore, it is more appropriate to manage with absolute amounts than to manage with a proportional management reference value such as the rate of change. This is because it can be determined.
Therefore, the value represented by | D ₁ −D ₂ | is more preferably 1.8 or more, and further preferably 1.5 or more.

(4) -6 Firing Step Next, it is preferable to carry out a firing step shown as S3-6 in FIG. This baking step is a step of heating the developed resin film at a temperature near the curing temperature to stabilize its shape.
In other words, this baking process causes the resin film to thermally shrink and change the pattern shape, and when the above-described light reflectance measurement and shape measurement are performed, the numerical value changes before and after baking. It becomes.
That is, when the inspection process is performed after firing, it is necessary to set a management reference value for managing the replacement time of the developer to a value different from the above-described numerical value.

(5) Layer Thickness Adjustment Layer Formation Step Next, it is preferable to carry out a layer thickness adjustment layer formation step shown as S4 in FIG. The layer thickness adjusting layer is formed by subjecting a layer for adjusting the retardation of the transmission region (T) and the reflection region (R) to a predetermined pattern with respect to a resin material such as a photocurable resin or a thermosetting resin. It is the process of forming by giving.
More specifically, as shown in FIG. 11A, a transparent resin such as an acrylic resin, an epoxy resin, a polyimide resin, or a fluororesin is formed on the base 31 on which the color filter layer 37 and the light shielding film 39 are formed. The layer thickness adjusting layer 41 can be formed by applying a material and performing a predetermined patterning process.
In addition to the retardation adjustment function described above, the layer thickness adjustment layer 41 functions as a protective film for the color filter layer 37 and as an interlayer insulation film for insulating between the light reflection film 79 and the pixel electrode. It also has functions.

(6) Step of forming counter electrode and the like Next, a step of forming the counter electrode and the like shown as S5 in FIG. 4 is performed. As shown in FIG. 11B, the formation process of the counter electrode and the like is performed by laminating a transparent conductive film on the substrate 31 by a sputtering method or the like, and then forming the counter electrode 33 in a stripe shape by a photolithography method or an etching method. Form. Further, the counter substrate 30 can be formed by forming an alignment film 45 made of polyimide resin or the like on the substrate surface on which the counter electrode 33 is formed.

2-2. Element Substrate Manufacturing Method (1) TFD Element Formation Step Next, a TFD element formation step shown as S1 ′ in FIG. 4 is performed. The process of forming the TFD element is a process of forming a TFD element as a switching element on the element substrate 60. The TFD element is electrically connected to the data line connected to the TFD element and the counter electrode outside the display region. This is a process for forming the routing wiring and the like together.
More specifically, first, as shown in FIG. 12A, an element first electrode 71 is formed on a base 61 made of a glass substrate. The element first electrode 71 is made of, for example, a tantalum alloy and can be formed by using a sputtering method or an electron beam evaporation method. At this time, before the element first electrode 71 is formed, the adhesion of the element first electrode 71 to the second glass substrate 61 can be remarkably improved, and the second glass substrate 61 to the element first electrode 71. Therefore, it is also preferable to form an insulating film made of tantalum oxide (Ta ₂ O ₅ ) or the like on the substrate 61.

Next, as shown in FIG. 12B, the surface of the element first electrode 71 is oxidized by anodic oxidation to form an oxide film 72. More specifically, after the substrate on which the element first electrode 71 is formed is immersed in an electrolytic solution such as a citric acid solution, a predetermined voltage is applied between the electrolytic solution and the element first electrode 71. Thus, the surface of the element first electrode 71 can be oxidized.
Next, again, a metal film such as chromium is formed on the entire surface of the substrate including the element first electrode 71 by a sputtering method or the like, and is patterned by a photolithography method, so that FIG. As shown, element second electrodes 73 and 74 can be formed to form a TFD element.
In the step of forming the element second electrode, the data line 65 and the lead wiring (not shown) are formed by patterning in accordance with a predetermined pattern at the same time. At this time, the data line and the routing are included so as to include a linear portion used as an inspection area for verifying the formation state of the formed data line and the routing wiring in an area corresponding to the driver mounting area or in the vicinity thereof. Form wiring.

(2) Formation Step of Pixel Electrode and the like Next, a formation step of the pixel electrode and the like shown as S2 ′ in FIG. 4 is performed. Such a process for forming the pixel electrode or the like is a planar electrode for applying a voltage to the liquid crystal material for alignment, and is configured to be electrically connected to the above-described TFD element 69 and switched on and off. .
More specifically, as shown in FIG. 12D, after forming a transparent conductive layer made of a transparent conductive material such as ITO (indium tin oxide or the like) by sputtering or the like, a photolithography method is used. Thus, the pixel electrode 63 electrically connected to the TFD element 69 is formed.
Further, as shown in FIG. 12E, the element substrate 60 can be manufactured by forming an alignment film 85 made of polyimide resin or the like on the element substrate 60 on which the pixel electrodes 63 and the like are formed.

2-3. Assembling Method (1) Bonding Step The bonding step shown as S6 in FIG. 4 is a step of bonding the element substrate and the counter substrate through a sealing material as shown in FIGS. 13 (a) to (b). It is.
More specifically, the counter substrate 30 and the element substrate 60 on which the sealing material 23 is formed are aligned to determine the bonding position. Thereafter, the two substrates are overlapped and bonded, and then heated and pressurized and held, and the counter substrate 30 and the element substrate 60 are bonded together to form a pair of substrates 20 having a liquid crystal injection port. .

(2) Post-process The post-process shown as S7 in FIG. 4 includes several processes described below.
First, a liquid crystal material is injected into the substrate gap from a liquid crystal injection port by a known method (liquid crystal injection step), and then the injection port is sealed with a sealing material (sealing step).
Next, predetermined polarizing plates and retardation plates are arranged on the outer surfaces of the counter substrate and the element substrate, and electronic parts such as semiconductor elements are mounted on the projecting portion on the element substrate, or a flexible circuit board or a backlight. And the like, and the liquid crystal device 10 as shown in FIG. More specifically, as shown in FIG. 13B, a semiconductor element 91 is mounted on the projecting portion 60T of the element substrate 60 so as to electrically connect the data line 65 and the terminal 67, and the terminal 67 A liquid crystal device 10 as shown in FIG. 2 is formed by electrically connecting the flexible substrate 93 to the end of the substrate.

[Second Embodiment]
According to a second embodiment of the present invention, in a liquid crystal device including a TFT element as a switching element, a light reflecting film forming step for forming a light reflecting film on a substrate and a photosensitivity so as to overlap the light reflecting film Applying a resin material to form a resin layer, applying an exposure process for pattern exposure to the resin layer, and applying a developer to the resin layer to form a resin film having a predetermined shape, And a developing step for exposing at least a part of the light reflecting film, and further comprising a light reflectance measuring step for measuring the light reflectance in at least a part of the region where the light reflecting film is exposed. This is a method for manufacturing an electro-optical device.
Hereinafter, in a liquid crystal device including an element substrate having a TFT (Thin Film Transistor) element structure as a switching element and a counter substrate having a color filter layer, the light reflection film measurement in the first embodiment is performed for retardation adjustment. For example, a case where the present invention is applied to the layer thickness adjusting layer will be described with reference to FIGS. However, this embodiment shows one aspect of the present invention, and does not limit the present invention, and can be arbitrarily changed within the scope of the present invention.
That is, the light reflecting film and the layer thickness adjusting layer may be formed on the counter substrate side, and further, a structure using a TFD (Thin Film Diode) element as the switching element may be used.
Note that portions common to the first embodiment described above are omitted as appropriate, and portions different from the first embodiment will be mainly described.

1. Liquid Crystal Device (1) Basic Configuration First, a liquid crystal device manufactured by the method for manufacturing a liquid crystal device according to the present embodiment will be described.
The liquid crystal device 10 shown in FIG. 14 is formed by bonding a counter substrate 30 having a color filter layer 37 and an element substrate 60 having a TFT element 69 'to each other through a sealing material at the periphery thereof. The liquid crystal material 21 is disposed in the gap.

(2) Counter substrate (color filter substrate)
The counter substrate 30 is a substrate mainly including a color filter layer 37, a counter electrode 33, and an alignment film 45 on a base 31 made of glass or the like.
Here, the counter electrode 33 is a planar electrode formed over the entire surface with ITO (indium tin oxide) or the like. Further, a color filter layer 37 as a color filter element such as R (red), G (green), and B (blue) is provided below the counter electrode 33 so as to correspond to the pixel electrode 63 on the element substrate 60 side. Is arranged. A black matrix, that is, a light shielding film 39 is provided as a color mixture prevention region between adjacent colors at a position adjacent to the color filter layer 37 and not facing the pixel electrode 63.

(3) Element Substrate The element substrate 60 is formed on a base body 61 made of glass or the like through a TFT element 69 ′ as a switching element, a layer thickness adjustment layer 41 for retardation adjustment, and the layer thickness adjustment layer 41. And a pixel electrode 63 formed in an upper layer of the TFT element 69 ′.
Here, the pixel electrode 63 is formed as a transparent electrode using ITO or the like. An alignment film 85 made of a polyimide polymer resin is formed on the pixel electrode 63, and a rubbing process as an alignment process is performed on the alignment film 85.

  Further, a phase difference plate 47 is formed on the outer surface (that is, the upper side in FIG. 14) of the counter substrate 30, and a polarizing plate 49 is further formed thereon. Similarly, a retardation plate 87 is formed on the outer surface of the element substrate 60 (that is, the lower side in FIG. 14), and a polarizing plate 89 is further formed thereunder. Further, a backlight unit (not shown) is disposed below the element substrate 60.

The TFT element 69 ′ includes a gate electrode 171 formed on the element substrate 60, a gate insulating film 172 formed on the entire area of the element substrate 60 on the gate electrode 171, and the gate insulating film 172 sandwiched between the gate electrodes 171. The semiconductor layer 170 formed above the gate electrode 171, the source electrode 173 formed on one side of the semiconductor layer 170 via the contact electrode 177, and the contact electrode on the other side of the semiconductor layer 170 And a drain electrode 166 formed via 177.
The gate electrode 171 extends from the gate bus wiring (not shown), and the source electrode 173 extends from the source bus wiring (not shown). Further, a plurality of gate bus lines extend in the horizontal direction of the element substrate 60 and are formed in parallel in the vertical direction at equal intervals, and the source bus lines cross the gate bus lines with the gate insulating film 172 interposed therebetween. A plurality of lines extending in the vertical direction are formed in parallel in the horizontal direction at equal intervals.
Such a gate bus wiring is connected to a liquid crystal driving IC (not shown) and functions as, for example, a scanning line, while a source bus wiring is connected to another driving IC (not shown), for example, a signal line. Acts as
Further, the pixel electrode 63 is formed in a region excluding a portion corresponding to the TFT element 69 ′ in a rectangular region defined by the gate bus wiring and the source bus wiring intersecting each other.

  The layer thickness adjusting layer 41 is formed over the entire area of the element substrate 60 so as to cover the gate bus line, the source bus line, and the TFT element. However, a contact hole 83 is formed in a portion corresponding to the drain electrode 166 of the layer thickness adjusting layer 41, and the pixel electrode 63 and the drain electrode 166 of the TFT element 169 are connected through the contact hole 83.

2. Manufacturing method 2-1. Manufacturing Method of Counter Substrate (1) Color Filter Layer Formation Step First, a color filter layer formation step shown as S1 in FIG. 15 is performed. The formation process of the color filter layer or the like is a process of sequentially forming the color filter layer, the light shielding film, and the protective film on the substrate of the counter substrate.
More specifically, as shown in FIG. 16A, a photosensitive resin made of a resin material in which a coloring material such as a pigment or a dye is dispersed is applied on a substrate 31, and this photosensitive resin is applied. A color filter layer can be formed by sequentially performing pattern exposure and development processing on the substrate. The color filter layer 37 can be formed by repeating the exposure and development processing for each color of R (red), G (green), and B (blue).

Next, a light shielding film 39 is formed in the boundary region between the respective pixel regions. As a material used for the light shielding film 39, for example, a metal film such as chromium (Cr) or molybdenum (Mo) is used, or a coloring material of three colors of R, G, B is used as a resin or other base material. What was disperse | distributed in the material, what disperse | distributed coloring materials, such as a black pigment and dye, in resin and another base material, etc. can be used.
For example, in the case of forming the light shielding film 39 using a metal film, a metal material such as chromium (Cr) is stacked on the base 31 by a sputtering method or the like, and is then etched according to a predetermined pattern. To do.

  Finally, as shown in FIG. 16B, on the counter substrate 30 on which the color filter layer 37, the light shielding film 39, and the like are formed, for example, using an acrylic resin, an epoxy resin, a polyimide resin, a fluorine resin, The protective film 81 can be formed on the entire surface.

(2) Step of forming counter electrode and the like Next, a step of forming the counter electrode and the like shown as S2 in FIG. 15 is performed. The step of forming the counter electrode or the like is a step of forming the counter electrode 33 made of a transparent conductive material or the like on the protective film 81 formed on the counter substrate 30 as shown in FIG.
More specifically, after laminating a transparent conductive film on the substrate 31 on which the color filter layer 37 and the light shielding film 39 are formed by sputtering or the like, the counter electrode 33 is formed on the entire display region by photolithography and etching. Form.
Further, the counter substrate 30 can be formed by forming an alignment film 45 made of polyimide resin or the like on the substrate surface on which the counter electrode 33 is formed.
Here, when the switching element used for the element substrate is a TFT element (Thin Film Transistor), the counter electrode 33 is patterned as a planar electrode corresponding to each cell region.

2-2. Manufacturing method of counter substrate (1) TFT element forming step First, a TFT element forming step shown as S1 'in FIG. 15 is performed. The TFT element forming step is a step of forming a switching element such as a TFT element as shown in FIG. 17A by forming a metal film and an insulating film on the base of the element substrate and patterning them. .
In forming the switching element, the gate electrode 171 is formed on the base body 61 made of a glass substrate. The gate electrode 171 is made of a low resistance material such as chromium, tantalum, or molybdenum, and can be formed using a sputtering method or an electron beam evaporation method.

Next, a gate insulating film 172 as an insulating layer is formed on the gate electrode 171. The gate insulating film 172 can be formed by stacking electrical insulating materials such as silicon nitride (SiN _x ) and silicon oxide (SiO _x ).
Next, a semiconductor layer 170 can be formed by stacking a semiconductor material such as a-Si, polycrystalline silicon, or CdSe on the gate insulating film 172. Further, contact electrodes 177 can be formed on both end portions of the semiconductor layer 170 by doped a-Si or the like.
Finally, the source electrode 173, the source bus wiring integrated with the source electrode 173, and the drain electrode 166 can be formed so as to be in contact with the contact electrode 177. At this time, the source electrode 173, the source bus wiring (not shown), and the drain electrode 166 can be formed by using a low-resistance material such as titanium, molybdenum, or aluminum, for example, by a sputtering method or an electron beam evaporation method. .

(2) Light Reflecting Film Forming Step Next, a light reflecting film forming step shown as S2 ′ in FIG. 15 is performed. The light reflecting film forming step is performed in the same manner as the light reflecting film forming step in the first embodiment, whereby the light reflecting film 79 as shown in FIG. 17B can be formed.
At this time, when performing the light reflectivity measurement step in the present invention, as shown in FIG. 17B, the light reflection film 79 as a test pattern for light reflectivity measurement is formed in the non-display area 99 on the base 61. Is preferably formed.
This is because, when performing the light reflectance measurement, the light reflectance measurement can be performed even if the light reflection film exposed region does not exist in the display region.

(3) Layer Thickness Adjustment Layer Formation Step Next, a layer thickness adjustment layer formation step shown as S3 ′ in FIG. 15 is performed. The layer thickness adjusting layer is formed by subjecting a layer for adjusting the retardation of the transmission region (T) and the reflection region (R) to a predetermined pattern with respect to a resin material such as a photocurable resin or a thermosetting resin. It is the process of forming by giving.
More specifically, a coating process S3′-1 in which a photosensitive resin made of a resin material is applied so as to overlap the light reflection film to form a resin layer, and exposure for pattern exposure to the resin layer. Step S3′-2, a developing step S3′-3 in which a developing solution is applied to the resin layer to form a resin film having a predetermined shape, and at least a part of the light reflecting film is exposed, and this exposed region The light reflectance measurement step S3′-4 for performing the light reflectance measurement on the substrate, the inspection step S3′-5 for inspecting the measurement result, and the firing for thermally shrinking the resin film to stabilize the shape Step S3′-6.
That is, the layer thickness adjusting layer forming step has a configuration in which the light reflectance measurement performed in the color filter forming step in the first embodiment is applied to the layer thickness adjusting layer forming process.

(3) -1 Application Step First, the application step shown as S3′-1 in FIG. 15 is performed. Although this application | coating process can be implemented similarly to application | coating process S3-1 in 1st Embodiment, when applying to a layer thickness adjustment layer, it is necessary to use a transparent resin material as a resin material.

(3) -2 Exposure Step Next, an exposure step shown as S3′-2 in FIG. 15 is performed. About this exposure process, unlike the case of the color filter layer in the first embodiment, a chromaticity adjustment unit is not formed, so that the light reflection film exposed region 37a for measuring the light reflectance is set as the display region. It is difficult to form inside.
Therefore, when the light reflectance measurement in the present invention is performed on the layer thickness adjusting layer, a resin layer is formed on the light reflecting film as a test pattern in the outside display area 99 as shown in FIG. The exposed region is formed by removing.

(3) -3 Development Step Next, the development step shown as S3′-3 in FIG. 15 is performed. About this image development process, it can implement similarly to exposure process S3-3 in 1st Embodiment.

(3) -4 Light Reflectance Measurement Step Next, a light reflectance measurement step shown as S3′-4 in FIG. 15 is performed. Since the light reflectance measurement step is performed on the exposed region formed by removing the layer thickness adjusting layer 41 made of a transparent resin, the incident in the visible light region as used in the first embodiment is performed. Cannot use light.
Accordingly, it is necessary to use a wavelength in a short wavelength region such as ultraviolet light, or to partially disperse a light emitting material in a resin to increase sensitivity to a specific wavelength.

(3) -5 Inspection Step and Baking Step Next, an inspection step shown as S3′-5 in FIG. 15 and a baking step shown as S3′-6 in FIG. 4 are performed. About these processes, it can carry out similarly to 1st Embodiment.

(4) Formation Step of Pixel Electrode etc. Next, a formation step of the pixel electrode shown as S4 ′ in FIG. 15 is performed. The process of forming the pixel electrode or the like is a process of forming a pixel electrode made of a transparent conductive film on the substrate on which the TFT element 69 'is formed, as shown in FIG.
More specifically, the pixel electrode 63 is formed by forming a transparent conductive film by a sputtering method or the like at a position facing the pixel electrode in the counter substrate.
Finally, an alignment film 85 made of polyimide resin or the like is formed, and a rubbing process is performed on the alignment film 85, thereby providing an alignment control function.

2-3. Assembly process etc. About the bonding process shown as S5 in FIG. 15, and the post process shown as S6 in FIG. 15, it can implement similarly to 1st Embodiment.

According to the electro-optical device manufacturing method, the electro-optical device inspection method, and the inspection device of the present invention, by measuring the light reflectance in the exposed region of the light reflection film formed by removing the resin layer by development, Appropriate judgment of the replacement time of the developer can be made to prevent the development failure of the resin layer.
Therefore, the electro-optical device obtained by the electro-optical device manufacturing method, the electro-optical device inspection method, the inspection device, and the like according to the present invention has high quality and can exhibit high economic efficiency. That is, as an electro-optical device and an electronic apparatus using the same according to the present invention, for example, a mobile phone, a personal computer, a liquid crystal television, a viewfinder type / direct monitor type video tape recorder, a car navigation device, a pager , Electrophoresis devices, electronic notebooks, calculators, word processors, workstations, video phones, POS terminals, electronic devices equipped with touch panels, and devices using electron-emitting devices (FED: Field Emission Display and SCEED: Surface-Conduction Electron- Emitter Display), plasma display devices, organic electroluminescent devices, and inorganic electroluminescent devices.

1 is a cross-sectional view for explaining an electro-optical device according to a first embodiment. FIG. 3 is a perspective view for explaining the electro-optical device according to the first embodiment. FIG. 3 is a plan view for explaining the electro-optical device according to the first embodiment. FIG. 6 is a flowchart for explaining the method for manufacturing the electro-optical device according to the first embodiment. (A)-(c) is a figure provided in order to demonstrate the manufacturing process of the opposing substrate which concerns on 1st Embodiment. (Part 1) (A)-(c) is a figure provided in order to demonstrate the manufacturing process of the opposing substrate which concerns on 1st Embodiment. (Part 2) (A)-(b) is a schematic diagram which shows the relationship between a resist residue and light reflectivity. It is a characteristic view which shows the relationship between the usage frequency of a developing solution, and light reflectance. It is the schematic which shows an example of a light reflectivity measuring device. (A)-(b) is the schematic which shows an example of the shape measurement in a shape measurement process. (A)-(b) is a figure provided in order to demonstrate the manufacturing process of a counter substrate. (Part 3) (A)-(e) is a figure provided in order to demonstrate the manufacturing process of an element substrate. (A)-(b) is a figure provided in order to demonstrate an assembly process. It is sectional drawing with which it uses in order to demonstrate the electro-optical apparatus which concerns on 2nd Embodiment. It is a flowchart provided in order to demonstrate the manufacturing method of the electro-optical apparatus which concerns on 2nd Embodiment. (A)-(c) is a figure provided in order to demonstrate the manufacturing process of the opposing board | substrate which concerns on 2nd Embodiment. (A)-(c) is a figure provided in order to demonstrate the manufacturing process of the element substrate which concerns on 2nd Embodiment.

Explanation of symbols

10: liquid crystal device, 20: pair of substrates, 21: electro-optical material (liquid crystal material), 23: seal part, 23a: liquid crystal injection port, 30: counter substrate (color filter substrate), 31: substrate, 33: pixel electrode 37a: exposed region, 37X: resin layer, 37: color filter layer (resin film), 39: light-shielding film, 41: protective film (layer thickness adjusting layer), 45: alignment film, 47: retardation plate, 49: Polarizing plate, 60: element substrate, 61: base, 63: pixel electrode, 66: drain electrode, 69: TFD element, 69 ′: TFT element, 71: element first electrode, 72: insulating film, 73: element second Electrode, 79: Light reflecting film, 81: Organic insulating film, 83: Contact hole, 87: Retardation plate, 89: Polarizing plate, 200: Light reflectometer

Claims (11)

In the method of manufacturing the electro-optical device,
A light reflecting film forming step for forming a light reflecting film on the substrate;
An application step of applying a photosensitive resin material so as to overlap the light reflecting film to form a resin layer;
An exposure step of pattern exposure for the resin layer;
A developing step of applying a developer to the resin layer to form a resin film having a predetermined shape and exposing at least a part of the light reflecting film;
The electro-optical device manufacturing method further includes a light reflectivity measurement step for measuring the light reflectivity in at least a part of the region where the light reflection film is exposed.   2. The method of manufacturing an electro-optical device according to claim 1, wherein when the absorption wavelength in the resin layer is in a visible light region, incident light for measuring the light reflectance is visible light.   3. The method of manufacturing an electro-optical device according to claim 1, wherein an equivalent circle diameter of the incident light spot for measuring the light reflectance is set to a value in a range of 1 to 100 (μm).   The method of manufacturing an electro-optical device according to claim 1, wherein the light reflectance measurement is performed at a plurality of locations in the substrate surface.   The method for manufacturing an electro-optical device according to claim 1, further comprising a baking step of baking the resin film after the developing step.   6. The method of manufacturing an electro-optical device according to claim 1, further comprising a blowing step for removing moisture remaining on the surface after the developing step.   The method for manufacturing an electro-optical device according to claim 1, further comprising a dimension measuring step for measuring a dimension of the resin film after the developing step.   8. The electricity according to claim 1, further comprising an inspection step for inspecting a predetermined state of the developer based on a measurement result obtained in the light reflectance measurement step. Manufacturing method of optical device.   9. The method of manufacturing an electro-optical device according to claim 8, wherein, in the inspection step, the developer is replaced when the light reflectance becomes a value less than 90%. In the inspection method of the electro-optical device,
A light reflecting film forming step for forming a light reflecting film on the substrate;
An application step of applying a photosensitive resin material so as to overlap the light reflecting film to form a resin layer;
An exposure step of pattern exposure for the resin layer;
A developing step of applying a developing solution to the resin layer to form a resin film having a predetermined shape, and exposing at least part of the light reflecting film;
A light reflectance measurement step for measuring light reflectance in at least a part of the region where the light reflecting film is exposed, and
Furthermore, based on the measurement result obtained in the light reflectance measurement step, an inspection step for inspecting the predetermined state of the developer is included, and the light reflectance is less than 90%. An inspection method for an electro-optical device, wherein the developer is changed. An inspection device for measuring the light reflectance of the region where the light reflecting film is exposed in the substrate for the electro-optical device,
Alignment means for aligning the relative positions of the electro-optical device substrate and incident light;
Adjusting means for adjusting the spot diameter of the incident light;
Detecting means for detecting the incident light and the reflected light from the light reflecting film, and
A calculation means for calculating a result obtained from the detection means;
And a display means for displaying a result obtained from the computing means.

Images