JP2007101409A - Probe manufacturing method and probe card - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe manufacturing method for simplifying a sacrifice-layer forming process, a plating process, and a sacrifice-layer removal process for probes, and arranging the probes so as to correspond to a plurality of electrodes severally disposed on confronting side surfaces of a plurality of measuring objects. <P>SOLUTION: The method includes: a step of forming a second seat 420 on a part of a surface of a substrate 100 and on a first probe 210a; a step of forming, on the surface of the substrate 100, a resist 530 (a second sacrifice layer) having an opening 531 (a second opening) for exposing a part of the surface of the substrate 100 and the second seat 420; and a step of providing a plating on the opening 531 in the resist 530 to form a second probe 210b on a part of the surface of the substrate 100 and on the second seat 420. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a probe manufacturing method and a probe card used for measuring various electrical characteristics of an object to be measured, which is a semiconductor element formed on a semiconductor wafer.

  This type of probe card has a substrate and a plurality of cantilever type probes arranged in a row or a plurality of rows on the surface of the substrate, and the probe is a base positioned on the surface of the substrate. And a beam portion extending from the base portion in the vertical direction and extending in the horizontal direction and having an L-shaped shape.

  The probe of this probe card is manufactured by the following silicon process technology. First, a first sacrificial layer is formed on the surface of the substrate, a first opening is formed in the first sacrificial layer using a first mask, and a first conductive layer is formed in the first opening. A layer is formed to form the base of the probe. Thereafter, a second sacrificial layer is formed on the first sacrificial layer, a second opening is formed in the second sacrificial layer using a second mask, and a second opening is formed in the second opening. Two conductive layers are formed to form a beam portion. Thereafter, the first and second sacrificial layers are removed.

  Using such silicon process technology, multiple probes can be arranged at a narrow interval at a time in correspondence with multiple electrodes on a highly integrated object to be measured (ie, one having a narrow interval between electrodes). Can do.

  By the way, in recent years, in order to shorten the measurement time of an object to be measured, it is required to measure a plurality of objects to be measured arranged in a matrix at a time.

  However, as shown in FIG. 8, when the probe 2 a is the above-described cantilever type, the X axis region, the −X axis region, the Y axis region, and −Y, which are regions in which one side of the four objects to be measured is opposed to each other. Corresponding to the arrangement of the electrode 1a in the axial region, if it is provided on the surface of the substrate 2b, the portion where the Y-axis region and the X-axis region or the -X-axis region intersect, or the -Y-axis region and the X-axis region Alternatively, the probes 2a corresponding to the electrodes 1a at the portion where the −X axis region intersects each other. In other words, there is a problem that the probe 2a cannot be provided in the central region on the surface of the substrate 2b.

  As a probe card that can solve such a problem, a plurality of cantilever-type first probes formed in a line on the surface of the substrate in the same direction and parallel to cover the first probe. A plurality of cantilever-type second probes formed side by side, and the first probe is one of the object 1 to be measured in the X-axis region, -X-axis region, Y-axis region, or -Y-axis region. Some of the electrodes 1a allow the second probe to come into contact with the electrode 1a of the other object 1 to be measured in the X-axis region, the -X-axis region, the Y-axis region or the -Y-axis region.

  The first probe includes a first base portion located on the surface of the substrate, a first pillar portion extending in a vertical direction from the first base portion, and a horizontal direction from the first pillar portion. It has a shape having an extended first arm portion and a first contact portion provided at the tip of the first arm portion. On the other hand, the second probe includes a second base portion located on the surface of the substrate, and a second pillar portion extending from the second base portion in a vertical direction higher than the first pillar portion. And a second arm portion extending horizontally from the second pillar portion along the first arm portion, and a second contact portion provided at a tip portion of the second arm portion. It has a shape (see Patent Document 1).

US6520778B1 publication

  However, when the first and second probes are manufactured by the silicon process technique, the following steps are performed. First, a first sacrificial layer is formed on the surface of the substrate, a first opening is formed in the first sacrificial layer using a first mask, and a first conductive layer is formed in the first opening. A layer is formed to form the first column of the first probe. Thereafter, a second sacrificial layer is formed on the first sacrificial layer, a second opening is formed in the second sacrificial layer using a second mask, and a second opening is formed in the second opening. Two conductive layers are formed to form the first arm portion of the first probe. Thereafter, a third sacrificial layer is formed on the second sacrificial layer, a third opening is formed in the third sacrificial layer using a third mask, and a third opening is formed in the third opening. 3 conductive layers are formed to form the first contact portion of the first probe. Thereafter, the first, second and third sacrificial layers are removed.

  Next, a fourth sacrificial layer is formed on the surface of the substrate, a fourth opening is formed in the fourth sacrificial layer using a fourth mask, and a fourth opening is formed in the fourth opening. A conductive layer is formed to form the second pillar portion of the second probe. Thereafter, a fifth sacrificial layer is formed on the fourth sacrificial layer, a fifth opening is formed in the fifth sacrificial layer using a fifth mask, and a fifth opening is formed in the fifth opening. 5 conductive layers are formed to form the second arm portion of the second probe. Thereafter, a sixth sacrificial layer is formed on the fifth sacrificial layer, a sixth opening is formed in the sixth sacrificial layer using a sixth mask, and a sixth opening is formed in the sixth opening. 6 conductive layers are formed to form a second contact portion of the second probe. Thereafter, the fourth, fifth and sixth sacrificial layers are removed.

  Thus, the first and second probes are manufactured by repeating the step of forming a sacrificial layer for each part, the step of plating the opening of the sacrificial layer, and the step of removing the sacrificial layer. For this reason, the sacrificial layer forming step, the plating step, and the sacrificial layer removing step of the probe are increased, and there is a problem that the cost is increased.

  The present invention was devised in view of the above circumstances, and its object is to reduce the sacrificial layer forming step, the plating step and the sacrificial layer removing step of the probe as compared with the conventional example, and It is an object of the present invention to provide a probe manufacturing method and a probe card capable of arranging probes in correspondence with a plurality of electrodes respectively arranged on opposing surfaces of a plurality of objects to be measured.

  In order to solve the above problems, a method for manufacturing a probe of the present invention includes a step of forming a first pedestal on a surface of a substrate, a part of the surface of the substrate on the surface of the substrate, and the first. Forming a first sacrificial layer having a first opening exposing the pedestal, and plating the first opening of the first sacrificial layer to form a part of the first sacrificial layer on the surface of the substrate and the first sacrificial layer. Forming a first probe on the pedestal, removing the first sacrificial layer, forming a second pedestal on the surface of the substrate and on the first probe, and the substrate Forming a second sacrificial layer having a second opening exposing a part of the surface of the substrate and the second pedestal on the surface of the substrate, and a second opening of the second sacrificial layer And forming a second probe on a part of the surface of the substrate and on the second pedestal. That.

  The probe card of the present invention includes a plurality of cantilever-type first probes arranged in a line on the surface of the substrate in the same direction, and a surface of the substrate facing the same direction as the first probe; A plurality of cantilever-type second probes arranged in parallel at the same interval, and the first and second probes are first and second base portions located on the surface of the substrate; The first and second base portions and a plurality of stepped first and second beam portions continuous to each other, wherein the second beam portion is the first beam portion. The distance between the covered portions of the second beam portion and the first beam portion is substantially the same.

  The first, second, third, and fourth probe groups are disposed at positions rotated by 90 ° on the surface of the substrate, and the first, second, third, and fourth probe groups are: The first and second probes can be provided.

  In the method for manufacturing a probe according to claim 1 of the present invention, a second pedestal is formed on the first probe formed on the first pedestal, and the second probe is formed on the second pedestal. To form. Therefore, the sacrificial layer forming step, the plating step, and the sacrificial layer removing step of the probe can be reduced as compared with the conventional example, and the cost can be reduced.

  In the case of the probe card according to the second aspect of the present invention, the first beam of the first probe in which the second beam portions of the second probe arranged on the surface of the substrate are arranged on the surface of the substrate. The distance between the covered portions of the second beam portion and the first beam portion is substantially the same. Therefore, it is possible to form the second pedestal on the first beam portion of the first probe and form the second beam portion of the second probe on the second pedestal. Accordingly, the sacrificial layer removal process, the plating process, and the sacrificial layer removal process can be reduced as compared with the conventional example, and the cost can be reduced. In addition, since it can be formed at a time on the first and second pedestals of the first and second beam portions having a plurality of steps, it is sacrificed for each step portion of the first and second beam portions. There is no need to form a layer. Therefore, also in this respect, the sacrificial layer removing step, the plating step, and the sacrificial layer removing step of the probe can be reduced.

  In the case of the probe card according to the third aspect of the present invention, the first, second, third, and fourth probe groups are arranged on the surface of the substrate at positions rotated by 90 °. The first, second, third and fourth probe groups have the first and second probes. That is, the first, second, third, and fourth probe groups are X-axis regions, -X-axis regions, and Y-axes that are regions of one side of a plurality of objects to be measured that are arranged in a matrix. It can arrange | position corresponding to the some electrode of a area | region and -Y-axis area | region. For this reason, it becomes possible to simultaneously measure the electrical characteristics of a plurality of objects to be measured arranged in a matrix.

  Hereinafter, a probe card according to an embodiment of the present invention will be described with reference to the drawings. 1 is a plan view through which a substrate of a probe card according to an embodiment of the present invention is transmitted, FIG. 2 is a plan view of an object to be measured whose electrical characteristics are measured using the probe card, and FIG. Is a cross-sectional view showing a use state of the first probe group portion of the probe card, FIG. 4 is a cross-sectional view showing a manufacturing process of the first probe of the probe card, and FIG. FIG. 5B is a diagram showing the resist forming process, FIG. 5C is a diagram showing the probe forming process, and FIG. 5 is a cross-sectional view showing the process of manufacturing the first contact portion of the first probe of the probe card. FIG. 6A is a diagram showing a resist forming step, FIG. 6B is a diagram showing a first contact portion forming step, FIG. 6C is a diagram showing a resist removing step, and FIG. It is sectional drawing which shows the manufacturing process of the probe of (a), (a) is a base formation process FIG. 7B is a diagram showing the resist forming process, FIG. 7C is a diagram showing the probe forming process, and FIG. 7 is a cross-sectional view showing the process of manufacturing the second contact portion of the second probe of the probe card. (A) shows a resist forming step, (b) shows a second contact portion forming step, and (c) shows a resist removing step.

  A probe card C shown in FIG. 1 includes an insulating substrate 100, and first, second, third, and fourth probe groups 200 arranged at positions rotated by 90 ° on the surface of the substrate 100, The configuration includes eight fifth probe groups 300 provided around the first, second, third, and fourth probe groups 200.

  This probe card C is used to simultaneously measure various electrical characteristics of the objects to be measured 10a, 10b, 10c, and 10d arranged in a square shape shown in FIG. A plurality of electrodes 11a, 11b, 11c, and 11d are provided side by side at the peripheral portions on the surfaces of the objects to be measured 10a, 10b, 10c, and 10d. In addition, the area | region of the one side which the to-be-measured object 10a and the to-be-measured object 10b mutually opposes is a Y-axis area | region, The area | region of the to-be-measured object 10b and the to-be-measured object 10c mutually opposes an X-axis area | region, A region on one side of the object 10c and the object 10d to be measured facing each other is referred to as a -Y axis region, and a region on the side of the object 10d to be measured and the object 10a to be measured facing each other is referred to as a -X axis region.

  The first probe group 200 is arranged in a row and in the same direction, corresponding to the arrangement of the plurality of electrodes 11b, 11a on the surface of the measurement target objects 10b, 10a in the Y-axis region on the surface of the substrate 100. It has a plurality of cantilever type first and second probes 210a and 210b arranged. That is, the first and second probes 210a and 210b are arranged in parallel at the same interval.

  As shown in FIG. 3, the first probe 210a includes a first base portion 211a located on the surface of the substrate 100, a step-like first beam portion 212a continuous with the first base portion 211a. The first beam portion 212a has a protruding first contact portion 213a that is continuous with the distal end portion of the first beam portion 212a.

  The first base portion 211 a is a portion that is electrically connected to the wiring pattern 110 of the substrate 100. The first beam portion 212a is connected to the first lower step portion 2121a that is continuous with the first base portion 211a, the first middle step portion 2122a that is connected to the first lower step portion 2121a, and the first middle step portion 2122a. A three-stage structure having a first upper stage portion 2123a. The 1st contact part 213a is a part which contacts the electrode 11b of the to-be-measured object 10b.

  The first lower step portion 2121a has a shape extending from the first base portion 211a in the right direction in the drawing, extending in a direction away from the substrate 100, and extending in the horizontal direction. The first middle step 2122a has a shape extending from the first lower step 2121a in the right direction in the figure while extending away from the substrate 100 and extending in the horizontal direction. The first upper step 2123a has a shape extending from the first middle step 2122a in a direction away from the substrate 100 while curving in the right direction in the figure.

  On the other hand, as shown in FIG. 3, the second probe 210b includes a second base portion 211b located on the surface of the substrate 100, and a stepped second beam portion continuous with the second base portion 211b. It has a shape having 212b and a protruding second contact portion 213b continuous to the tip of the second beam portion 212b.

  Similar to the first base portion 211a, the second base portion 211b is a portion that is electrically connected to the wiring pattern 110 of the substrate 100. The second base portion 211b is disposed so as to cover the first beam portion 212a.

  The second beam portion 212b is connected to the second lower step portion 2121b that is continuous with the second base portion 211b, the second middle step portion 2122b that is connected to the second lower step portion 2121b, and the second middle step portion 2122b. A three-stage structure having a second upper stage portion 2123b.

  The second lower step portion 2121b has a shape that extends from the second base portion 211b in the vertical direction and has an L shape extending in the horizontal direction, and covers the first base portion 211a. The second middle step 2122b has a shape along the first lower step 2121a and covers the first lower step 2121a. At this time, the distance between the lower surface of the second middle step portion 2122b and the upper surface of the first lower step portion 2121a is the same. The second upper step portion 2123b has a shape along the first middle step portion 2122a, and covers the first middle step portion 2122a. At this time, the distance between the lower surface of the second upper step portion 2123b and the upper surface of the first middle step portion 2122a is the same.

  The second probe group 200 includes a plurality of first and second probes 210 a and 210 b that are the same as the first probe group 200. In the second probe group 200, the first and second probes 210a and 210b are arranged corresponding to the arrangement of the plurality of electrodes 11c and 11b on the surface of the X-axis region of the measurement objects 10c and 10b. Other than that, the first probe group 200 is the same. Therefore, the description is omitted.

  The third probe group 200 includes the same plurality of first and second probes 210 a and 210 b as the first probe group 200. In the third probe group 200, the first and second probes 210a and 210b are arranged corresponding to the arrangement of the plurality of electrodes 11d and 11c on the surface of the −Y-axis region of the objects to be measured 10d and 10c. The first probe group 200 is the same as the first probe group 200 except for the above. Therefore, the description is omitted.

  The fourth probe group 200 includes the same plurality of first and second probes 210 a and 210 b as the first probe group 200. In the fourth probe group 200, the first and second probes 210a and 210b are arranged corresponding to the arrangement of the plurality of electrodes 11a and 11d on the surface of the measurement target objects 10a and 10d in the −X axis region. Except for the above, it is the same as the first probe group 200. Therefore, the description is omitted.

  The fifth probe group 300 includes a plurality of cantilever-type third probes 310 having the same shape as the first probe 210a. As shown in FIGS. 1 and 2, the third probe 310 is arranged in the arrangement of the electrodes 11b, 11a, 11c, and 11d on the surfaces of the remaining sides that are not opposed to the objects to be measured 10a, 10b, 10c, and 10d. Correspondingly arranged.

  As the substrate 100, a known printed circuit board, silicon substrate, or the like is used. As shown in FIG. 3, the first and second probes 210a and 210b and the fifth probe group of the first, second, third and fourth probe groups 200 are formed inside and on the surface of the substrate 100. A plurality of wiring patterns 110 electrically connected to the third probes 310 of 300 (here, the wiring patterns 110 connected to the first and second probes 210a and 210b are illustrated, and the third probes 310 are illustrated. The wiring pattern 110 connected to is not shown). Furthermore, external electrodes (not shown) that are electrically connected to the wiring patterns 110 are provided on the surface of the substrate 100. This external electrode is electrically connected to a measuring apparatus described later.

  Hereinafter, the first, second, third, and fourth probes 210a and 210b of the first, second, third, and fourth probe groups 200 and the third probe 310 of the fifth probe group 300 are simultaneously placed on the surface of the substrate 100. A method of forming will be described. Since the third probe 310 has the same shape as the first probe 210a, the description thereof is omitted.

  First, as shown in FIG. 4A, copper is plated on the surface of the substrate 100 to form a first pedestal 410. The first pedestal 410 includes a first lower step portion 411, a first middle step portion 412 that is continuous with the first lower step portion 411, and a first upper step portion 413 that is continuous with the first middle step portion 412. It has a three-stage structure.

  Thereafter, a resist 510 (that is, a first sacrificial layer) is formed on the surface of the substrate 100 so as to cover the first pedestal 410. Then, as shown in FIG. 4B, the resist 510 is exposed and developed using a first mask (not shown), and then a part of the surface of the substrate 100 and the first pedestal 410 are exposed by etching. An opening 511 (that is, a first opening) is formed. As shown in FIG. 4C, the first probe 210 a having a shape along a part of the surface of the substrate 100 and the first pedestal 410 is formed in the opening 511. That is, the first base portion 211 a of the first probe 210 a is formed on a part of the surface of the substrate 100, and the first probe 210 a of the first probe 210 a is formed on the first lower step portion 411 of the first base 410. The first lower step 2121a of one beam portion 212a is on the first middle step 412 of the first pedestal 410, and the first middle step 2122a of the first beam portion 212a is the first pedestal. A first upper step portion 2123a of the first beam portion 212a is formed on the first upper step portion 413 of 410.

  Thereafter, a resist 520 in which the first probe 210 a is embedded is formed integrally with the resist 510. Then, as shown in FIG. 5A, the resist 520 is exposed and developed using a second mask (not shown), and then the first beam portion 212a of the first probe 210a is etched. An opening 521 is formed through which the upper surface of the tip of the upper step 2123a is exposed. As shown in FIG. 5B, the opening 521 is plated, and the first contact portion 213a of the first probe 210a is replaced with the first beam portion 212a of the first probe 210a. It forms so that it may continue to the front-end | tip part of the upper stage part 2123a. Then, as shown in FIG. 5C, the resist 520 is removed.

  After that, as shown in FIG. 6A, copper is plated on a part of the surface of the substrate 100 and the first probe 210a to form the second pedestal 420. The second pedestal 420 is connected to a part of the surface of the substrate 100 and a second lower step 421 located on the first base portion 211a of the first probe 210a, and the second lower step 421. And a second middle / lower stage 422 located on the first lower stage 2121a of the first beam section 212a of the first probe 210a, the second middle / lower stage 422, and the first middle / lower stage 422. The second middle / upper stage 423 located on the first middle stage 2122a of the first beam section 212a of the first probe 210a, and the second middle / upper stage 423 are connected to the second middle / upper stage 423 and The first beam portion 212a has a four-stage structure having a first upper step portion 2123a and a second upper step portion 424 located on the first contact portion 213a. The thicknesses of the second middle / lower step 422, the second middle / upper step 423, and the second upper step 424 are uniform.

  Thereafter, a resist 530 (that is, a second sacrificial layer) is formed on the surface of the substrate 100 so as to cover the second pedestal 420. Then, as shown in FIG. 6B, the resist 530 is exposed and developed using a third mask (not shown), and then a part of the surface of the substrate 100 and the second pedestal 420 are etched by etching. An opening 531 (that is, a second opening) is formed in which a part of the second lower step 421, the second middle lower step 422, and the second middle upper step 423 are exposed. The opening 531 is plated to form a second probe 210b on a part of the surface of the substrate 100 and on the second pedestal 420 as shown in FIG. 6C. In other words, the second base portion 211 b of the second probe 210 b is formed on a part of the surface of the substrate 100, and the second probe 210 b of the second probe 210 b is formed on the second lower step portion 421 of the second pedestal 420. The second lower step portion 2121b of the second beam portion 212b is disposed on the second middle lower step portion 422 of the second pedestal 420, and the second middle step portion 2122b of the second beam portion 212b is disposed on the second second step portion 2121b. A second upper step 2123b of the second beam portion 212b is formed on the second middle upper step 423 of the base 420.

  Thereafter, a resist 540 in which the second probe 210 b is embedded is formed integrally with the resist 530. Then, as shown in FIG. 7A, the resist 540 is exposed and developed using a fourth mask (not shown), and then etched to form a second beam of the first beam portion 212b of the second probe 210b. An opening 541 is formed through which the upper surface of the tip of the upper step 2123b is exposed. As shown in FIG. 7B, the opening 541 is plated, and the second contact portion 213b of the second probe 210b is connected to the second beam portion 212b of the first probe 210b. It forms so that it may continue to the front-end | tip part of the upper stage part 2123b. Then, as shown in FIG. 7C, the resist 540 and the first and second pedestals 410 and 420 are removed. In this way, the first and second probes 210 a and 210 b are formed on the surface of the substrate 100.

  Hereinafter, a method for simultaneously measuring the electrical characteristics of the objects to be measured 10a, 10b, 10c, and 10d using the probe card C will be described. First, the probe card C is attached to a prober of a measuring device (not shown).

  Thereafter, the prober is operated to bring the probe card C and the measurement target objects 10a, 10b, 10c, and 10d relatively close to each other. Then, the plurality of first and second probes 210a and 210b of the first probe group 200 come into contact with the plurality of electrodes 11b and 11a on the surface of the Y-axis region of the measurement target objects 10b and 10a, and in the vertical direction. Elastically deformed (see FIG. 3). The plurality of first and second probes 210a and 210b of the second probe group 200 are in contact with the plurality of electrodes 11c and 11b on the surface of the X-axis region of the objects to be measured 10c and 10b, and are elastically deformed in the vertical direction. To do. The plurality of first and second probes 210a and 210b of the third probe group 200 are in contact with the plurality of electrodes 11d and 11c on the surface of the −Y axis region of the objects to be measured 10d and 10c, and are elastic in the vertical direction. Deform. The plurality of first and second probes 210a and 210b of the fourth probe group 200 are in contact with the plurality of electrodes 11a and 11d on the surface of the measurement target objects 10a and 10d on the −X axis region, and are elastic in the vertical direction. Deform. A plurality of third probes 310 of the fifth probe group 300 are in contact with the electrodes 11a, 11b, 11c, and 11d on the surfaces of the remaining sides of the objects to be measured 10a, 10b, 10c, and 10d that do not face each other. It is elastically deformed.

  At this time, since the second beam portion 212b of the second probe 210b is displaced on the second beam portion 212a of the first probe 210a, the second beam portion 212b becomes the first beam portion 212a. Do not touch.

  In this process, the electrical characteristics of the objects to be measured 10a, 10b, 10c, and 10d are simultaneously measured by the measuring device.

  In the case of such a probe card C, the first, second, third, and fourth probe groups 200 are arranged at positions rotated 90 ° on the surface of the substrate 100. The first, second, third, and fourth probe groups 200 include first and second probes 210a and 210b that are arranged in two rows in the same direction. Therefore, the plurality of electrodes 11a and 11b in the Y-axis region, the plurality of electrodes 11b and 11c in the X-axis region, the plurality of electrodes 11c and 11d in the -Y-axis region, the plurality of electrodes 11d in the -X-axis region, The first and second probes 210a and 210b of each probe group can be arranged on 11a without crossing each other. As a result, the electrical characteristics of the objects to be measured 10a, 10b, 10c, and 10d can be measured simultaneously.

  Moreover, since the second pedestal 420 is formed on the first probe 210a formed on the first pedestal 410, and the second probe 210b is formed on the second pedestal 420, Compared to the conventional example, the sacrificial layer removal step, the plating step, and the sacrificial layer removal step of the probe can be reduced. Therefore, cost reduction can be achieved.

  Although this probe card has four probe groups having a plurality of first and second probes 210a and 210b, it is only necessary to have at least one probe group. That is, the first and second probes arranged as described above are brought into contact with a plurality of electrodes arranged in at least one row on the surfaces of the two sides to be measured facing each other, and the two objects to be measured are brought into contact with each other. It can be used to measure the measurement object simultaneously.

  Each probe group has the first and second probes 210a and 210b. However, when the electrodes of the object to be measured are provided in a plurality of rows on the surface of the peripheral portion, a third is provided. Needless to say, a fourth probe can be provided. In this case, the third probe is formed on the third pedestal formed on the second probe, and the fourth probe is formed on the fourth pedestal formed on the third probe. To form.

  For the first and second probes 210a and 210b, the first and second base portions and a plurality of stepped first and second beam portions connected to the first and second base portions are provided. And the second base portion is arranged so that the second beam portion covers the first beam portion, and the second beam portion and the first beam portion are arranged between the second beam portion and the first beam portion. Any shape can be used as long as the distance between the covered portions is substantially the same. That is, the first probe 210a has the first beam portion 212a having a three-stage structure, but may have a shape having a first beam portion having two or more stages. On the other hand, the same applies to the second probe 210b. Moreover, it is arbitrary whether the 1st, 2nd contact parts 213a and 213b are provided. When the first and second contact portions 213a and 213b are not provided, the step of forming the first and second contact portions 213a and 213b can be omitted.

  The method of manufacturing the probe can be arbitrarily changed as long as a pedestal is formed on the cantilever type probe using a lithography technique and another cantilever type probe is formed on the pedestal.

  Although the first pedestal 410 and the second pedestal 420 are made of copper, it goes without saying that a pedestal other than copper can be used.

  In the above embodiment, the case where four objects to be measured are arranged in a square shape has been described as an example. However, the present invention can be applied to a case where a plurality of objects to be measured are arranged in a matrix. Needless to say, there is.

It is the top view which permeate | transmitted the board | substrate of the probe card which concerns on embodiment of this invention. It is a top view of the to-be-measured object from which various electrical characteristics are measured using the probe card. It is sectional drawing which shows the use condition of the part of the 1st probe group of the probe card. It is sectional drawing which shows the manufacturing process of the 1st probe of the probe card, (a) is a figure which shows a base formation process, (b) is a figure which shows a resist formation process, (c) shows a probe formation process FIG. It is sectional drawing which shows the process of manufacturing the 1st contact part of the 1st probe of the probe card, (a) is a figure which shows a resist formation process, (b) shows a 1st contact part formation process. FIG. 4C is a diagram showing a resist removal process. It is sectional drawing which shows the manufacturing process of the 2nd probe of the probe card, (a) is a figure which shows a base formation process, (b) is a figure which shows a resist formation process, (c) shows a probe formation process FIG. It is sectional drawing which shows the process of manufacturing the 2nd contact part of the 2nd probe of the same probe card, (a) is a figure which shows a resist formation process, (b) shows a 2nd contact part formation process. FIG. 4C is a diagram showing a resist removal process. It is a top view which shows the problem of the probe card of a prior art example.

Explanation of symbols

10a, 10b, 10c, 10d Measurement object 11a, 11b, 11c, 11d Electrode C Probe card 100 Substrate 200 First, second, third, fourth probe group 210a First probe 211a Base part 212a Beam part 210b Second probe 211b Base portion 212b Beam portion 410 First base 420 Second base 510 Resist (first sacrificial layer)
511 opening (first opening)
530 resist (second sacrificial layer)
531 opening (second opening)

Claims (3)

  Forming a first pedestal on the surface of the substrate; and a first sacrificial layer having a first opening exposing a portion of the surface of the substrate and the first pedestal on the surface of the substrate. Forming a first probe on a part of the surface of the substrate and on a first pedestal, and plating the first opening of the first sacrificial layer; and Removing the sacrificial layer, forming a second pedestal on part of the surface of the substrate and the first probe, part of the surface of the substrate on the surface of the substrate, and the step Forming a second sacrificial layer having a second opening exposing the second pedestal; plating a second opening of the second sacrificial layer; And a step of forming a second probe on the second pedestal. A plurality of cantilever type first probes arranged in a line on the surface of the substrate in the same direction, and arranged in parallel on the surface of the substrate in the same direction and at the same interval as the first probe. A plurality of cantilever-type second probes,
The first and second probes include first and second base portions located on the surface of the substrate, and a plurality of stepped first and second steps that are continuous with the first and second base portions. Two beam portions,
The second base portion is disposed so that the second beam portion covers the first beam portion, and is between the portions covered by the second beam portion and the first beam portion. A probe card characterized by having substantially the same distance.   3. The probe card according to claim 2, further comprising first, second, third, and fourth probe groups disposed at positions rotated by 90 degrees on the surface of the substrate. 3. The probe card according to claim 3, wherein each of the third and fourth probe groups includes the first and second probes.

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