JP2007095373A - Image display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device enabled to realize its commercialization by avoiding failure of a lower electrode due to insulation failure with an upper electrode. <P>SOLUTION: The device is provided with a cathode substrate 10 equipped with a lower electrode 11, an upper electrode 13 and an electron accelerating layer pinched between the lower electrode 11 and the upper electrode 13, arranging in a matrix a number of thin-film electron sources emitting electron from a side of the upper electrode in a region laminated with the electron accelerating layer by impression of voltage between the lower electrode 11 and the upper electrode 13, and a phosphor screen substrate 100 equipped with phosphor of a plurality of colors in correspondence with each of the thin-film electron sources. The thin-film electron sources have the lower electrode 11 formed in a polygon shape in the region of the electron accelerating layer, with a power feeding part consisting of an electrode film of the lower electrode 11 arranged at least at one side of the polygon, and carries out correction of cutting electric joint of the power-feeding part at insulation failure, whereby, pixels can be separated in a state in which only the thin-film electron sources suffering from the insulation failure are independent of the lower electrode 11. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a self-luminous flat panel image display device, and more particularly to an image display device using a thin film type electron source in an electron emission portion, and particularly to an electrode structure of a thin film type electron source.

  As a self-luminous flat panel display (FPD) using a thin film type electron source array, an FED (Field Emission Display) using a small and accumulating cold cathode is known. The cold cathode of this FED is classified into a field emission type electron source and a hot electron type electron source. The former includes a Spindt type electron source, a surface conduction type electron source, a carbon nanotube type electron source, and the like, and the latter includes a metal-insulator-metal laminated MIM (Metal-Insulator-Metal) type, metal-insulation. A thin-film electron source such as a metal-insulator-semiconductor (MIS) type or a metal-insulator-semiconductor-metal type in which a body-semiconductor is stacked belongs.

  The MIM type electron source is disclosed in, for example, Patent Document 1 below. The structure and operation of this MIM type electron source have a structure in which an insulating layer is interposed between an upper electrode and a lower electrode, and by applying a voltage between the upper electrode and the lower electrode, the lower electrode Electrons in the vicinity of the Fermi level therein pass through the barrier due to a tunnel phenomenon, and are injected into the conduction band of the insulating layer, which is an electron acceleration layer, to become hot electrons, and flow into the conduction band of the upper electrode. Among these hot electrons, those that reach the upper electrode surface with energy equal to or higher than the work function φ are discharged into the upper electrode.

  Such MIM type electron sources are arranged in a plurality of rows (for example, in the horizontal direction) and a plurality of columns (for example, in the vertical direction) to form a matrix, and phosphors of a plurality of colors arranged corresponding to the respective electron sources are arranged in a vacuum. Thus, an image display apparatus can be configured.

  A self-luminous flat panel display (FPD) is a rear panel having a thin film type electron source as described above, a phosphor layer, and a phosphor layer for projecting electrons emitted from the thin film type electron source. A display panel is configured which includes a front panel provided with an anode for forming an accelerating voltage and a sealing frame that seals the opposing internal spaces of both panels in a predetermined vacuum state. This display panel is configured by combining a drive circuit.

  The back panel has the above-described thin film type electron source formed on a back substrate (also referred to as a cathode substrate), and the front panel includes a phosphor formed on the front substrate (also referred to as a phosphor substrate) and a thin film. And an anode for forming an accelerating voltage for forming an electric field for projecting electrons emitted from the electron source to the phosphor. This display panel is configured by combining a drive circuit.

  Each thin film type electron source is paired with a corresponding phosphor to constitute a unit pixel. Usually, one pixel (color pixel, pixel) is composed of unit pixels of three colors of red (R), green (G), and blue (B). In the case of a color pixel, the unit pixel is also called a sub-pixel (sub-pixel).

  The back panel has an insulating back substrate. A plurality of the back panels extend in one direction on the back substrate and are arranged in parallel in another direction orthogonal to the one direction, and scanning signals are sequentially applied in the other direction. Scanning signal wiring is formed. On the rear substrate, a plurality of image signal wirings arranged in the one direction so as to extend in the other direction and intersect the scanning signal wirings are formed. The thin film type electron source is provided in the vicinity of each intersection of the scanning signal wiring and the image signal wiring, and the scanning signal wiring and the thin film type electron source are connected by a feeding electrode, and scanning from the scanning signal wiring to the thin film type electron source is performed. A signal is supplied.

Japanese Patent Laid-Open No. 10-153979

  However, the image display device configured in this way has a structure in which a thin film type electron source is formed directly on the lower electrode serving as the image signal wiring. When an electrical insulation failure occurs between the upper electrode serving as the scanning signal wiring disposed above, all of the corresponding lower electrodes become defective, and as a result, it is impossible to produce a product. there were.

  In addition, if the lower electrode in which the insulation failure occurs is cut and removed, the data signal is not supplied, so that all of the thin film type electron sources arranged on the lower electrode are turned off, and the line is displayed on the screen. It is displayed as a defect, and as a result, commercialization becomes impossible.

  Accordingly, the present invention has been made to solve the above-described conventional problems, and its object is to avoid a failure of the lower electrode that occurs when an insulation failure occurs between the lower electrode and the upper electrode. An object of the present invention is to provide an image display device that can be commercialized.

  In order to achieve such an object, an image display device according to the present invention has an electron acceleration layer sandwiched between a lower electrode and an upper electrode and between the lower electrode and the upper electrode, and between the lower electrode and the upper electrode. A cathode substrate in which a number of thin-film electron sources that emit electrons from the upper electrode side in a region laminated with an electron acceleration layer by applying a voltage to the substrate are arranged in a matrix, and corresponding to each of the thin-film electron sources The thin-film electron source is formed in a polygonal shape in the region of the electron acceleration layer, and a power feeding unit comprising an electrode film of a lower electrode on at least one side of the polygon. It is characterized by having.

  According to the present invention, the thin film electron source is provided with the power feeding portion on at least one side of the polygonal shape, so that the thin film in which the insulation failure is caused by performing the correction for cutting the electrical connection of the power feeding portion when the insulation failure occurs. Since only a type electron source can be separated into pixels independent of the lower electrode, a display panel in which only one cell in one pixel does not generate an electron beam enables commercialization as an image display device, yield. It is possible to obtain an extremely excellent effect that can be greatly improved.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS The best mode for carrying out the present invention will be described below in detail with reference to the drawings of the examples.

  First, an image display apparatus according to the present invention will be described by taking an image display apparatus using an MIM type electron source as an example. However, the present invention is not limited to the MIM type electron source, and can be similarly applied to an image display apparatus using various electron emission sources described in the background art section. Particularly, it is effective for a hot electron type using a noble metal electrode such as platinum group having a catalytic activity or thin Au on the surface of the electron emission portion, or a surface conduction electron source using fine particles of noble metal or noble metal oxide.

  FIG. 1 is a schematic plan view illustrating an example of an image display device using an MIM type thin film electron source, illustrating the structure of an image display device according to a first embodiment of the present invention. This image display device is composed of a display panel in which a cathode substrate 10 and a phosphor screen substrate 100 are bonded together. In FIG. 1, only a part of the phosphor screen substrate 100 is shown to avoid complication, and a part of the constituent members of the phosphor screen formed on the inner surface is shown on the cathode substrate 10. The phosphor screen is composed of a red phosphor 111, a green phosphor 112, and a blue phosphor 113 that are partitioned by a black matrix 120 that improves contrast. The anode is not shown.

Examples of phosphors constituting the phosphor screen include Y ₂ O ₂ S: Eu (P22-R) as a red phosphor, ZnS: Cu, Al (P22-G) as a green phosphor, and blue phosphor. ZnS: Ag and Cl (P22-B) can be used, respectively. The black matrix 120 is formed on the inner surface of the phosphor screen substrate 100 that surrounds the phosphors of the respective colors and partitions adjacent phosphors.

  The cathode substrate 10 and the phosphor screen substrate 100 are bonded together via a high-strength spacer 30 that supports the display panel from atmospheric pressure, and the two substrates are held at a predetermined interval. After sealing with a stop frame interposed, the inside is vacuum-sealed. The spacer 30 is obtained by imparting conductivity to a plate-like glass or ceramic to prevent charging. The spacer 30 is disposed on the metal film upper layer 18 constituting the upper bus electrode 20 of the cathode substrate 10 so as to be hidden under the black matrix 120 of the phosphor screen substrate 100. The lower electrode 11 is connected to a signal line driving circuit 50 that supplies a data signal (display signal) to the pixel, and the upper bus electrode 20 formed of a laminated film of the metal film lower layer 16 and the metal film upper layer 18 scans the pixel. It is connected to a scanning line driving circuit 60 that supplies (selection signal). In the figure, reference numeral 14 denotes a protective insulating layer (field insulating layer) formed on the lower electrode 11.

  The thin film type electron source (electron emitting portion, electron source) is formed by the upper electrode 13 connected to the upper bus electrode 20 and laminated on the lower electrode 11 through the insulating layer, and is a thin layer portion of the insulating layer. Electrons are emitted from the portion of the insulating layer (tunnel insulating layer) 12 to be formed. The thin film type electron source has an opening so as to form a substantially frame shape in which a planar shape is not formed in a substantially square shape in a predetermined region on the lower electrode 11 and is surrounded by the opening. A power feeding structure is formed in which a power feeding portion made of an electrode film that feeds a data signal from the four sides of the four sides is formed.

  FIG. 2 is a diagram for explaining the principle of the MIM type electron source. In this electron source, when a drive voltage Vd is applied between the upper electrode 13 and the lower electrode 11 so that the electric field in the tunnel insulating layer 12 is about 1 to 10 MV / cm, the electron source is in the vicinity of the Fermi level in the lower electrode 11. Electrons pass through the barrier due to the tunnel phenomenon, are injected into the conduction band of the insulating layer 12 which is the electron acceleration layer, become hot electrons, and flow into the conduction band of the upper electrode 13. Among these hot electrons, those that reach the surface of the upper electrode 13 with energy equal to or higher than the work function φ of the upper electrode 13 are released into the vacuum 23.

  The MIM type electron source shown in FIG. 1 has a lower electrode 11, a tunnel insulating layer 12, and an upper electrode 13 which are stacked on a cathode substrate 10 to form an electron emission portion. Is electrically isolated from the upper bus electrode 20 by the field insulating layer 14 and the interlayer insulating layer 15. The upper electrode 13 is connected to the upper bus electrode 20 on one side of the wiring, and is separated by an undercut of the metal film lower layer 16 on the opposite side. Thereby, each upper bus electrode 20 can be electrically separated (separate adjacent pixels in the scanning direction).

  Next, the first embodiment of the present invention taking the MIM type electron source as an example will be described in detail with reference to FIGS. 3 to 11 are explanatory diagrams of the manufacturing process of the MIM type electron source constituting one pixel in the image display apparatus according to the first embodiment of the present invention, and the processes are sequentially shown according to FIGS. In each figure, (a) is a plan view of one pixel, (b) is a cross-sectional view taken along line AA ′ in (a), and (c) is along line BB ′ in (a). It is sectional drawing cut | disconnected. Note that one pixel (also referred to as a pixel) referred to here is a unit pixel for color display, and each pixel is composed of a plurality of sub-pixels (hereinafter also referred to as sub-pixels) that display different primary colors. In this embodiment, the sub-pixels of the three primary colors red, green, and blue are used. Here, an example in the case of using an interlayer insulating layer is shown.

  First, as shown in FIG. 3, a metal film to be the lower electrode 11 is formed on an insulating cathode substrate 10 such as a glass material. As the material of the lower electrode 11, aluminum (Al) or aluminum alloy (Al alloy) is used. Here, the reason why Al or Al alloy is used is that a good-quality insulating film can be formed by anodic oxidation. Here, an Al—Nd alloy doped with about 2 atomic% of neodymium (Nd) was used. For example, a sputtering method is used to form the lower electrode 11. The film thickness was about 300 nm.

  After the film formation, an L-shaped pattern and an inverted L-shaped pattern are formed in a predetermined region for forming the stripe-shaped lower electrode 11 and the electron emission portion of the lower electrode 11 by a patterning process and an etching process as shown in FIG. A substantially frame-shaped opening 11a in which no electrode film is formed is simultaneously formed in a substantially square shape combining the above. Thereby, the shape of the electron emission part on the lower electrode 11 forms a power supply structure having a power supply part made of an electrode film that supplies a data signal from the upper, lower, left and right directions of the four sides.

  The electrode width of the lower electrode 11 varies depending on the screen size and resolution of the image display device, but is about the arrangement pitch of the subpixels (about 100 μm to 200 μm). Etching uses, for example, wet etching with a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid. Since the lower electrode 11 has a simple and wide stripe structure, an inexpensive printing method can be used for patterning a resist for electrode processing. Here, a screen printing method is used. Of course, a relatively inexpensive photo-etching process such as proximity exposure can be used, and the cost can be reduced as compared with exposure using a stepper or a projection aligner.

  Next, a protective insulating layer (also referred to as a field insulating layer) 14 and an insulating layer (also referred to as a tunnel insulating layer) 12 that limit the electron emission portion and prevent electric field concentration on the edge portion of the lower electrode 11 are formed. First, as shown in FIG. 5, a resist film 25 is applied to a portion to be an electron emission portion on the lower electrode 11 and masked with the resist film 25. A portion that is not masked by the resist film 25 is selectively anodized thickly to form a protective insulating layer 14. Since the resist film 25 used in this step has the shape of an electron acceleration layer, it is desirable that the processing accuracy be higher than that of the lower electrode 11. For this reason, in this embodiment, patterning is performed not by a printing method but by a photolithography process using proximity exposure. In the anodic oxidation, when the formation voltage is about 100 V, the protective insulating layer 14 having a thickness of about 136 nm is formed.

  Thereafter, as shown in FIG. 6, the resist film 25 is removed, and the surface of the remaining lower electrode 11 is anodized. For example, when the formation voltage is about 6 V, an insulating layer (tunnel insulating layer) 12 having a thickness of about 10 nm is formed on the lower electrode 11, and the opening 11a formed in the lower electrode 11 is exposed.

  Next, as shown in FIG. 7, an interlayer insulating layer 15 is formed, and a metal layer to be the upper bus electrode 20 that is a power supply line to the upper electrode 13 and a spacer 30 are disposed on the interlayer insulating layer 15. A metal layer to be a spacer electrode is formed by sputtering, for example. As the interlayer insulating layer 15, for example, silicon oxide, silicon nitride, silicon or the like can be used. Here, silicon nitride having a high ability to prevent alkali metal precipitation was used, and the layer thickness was about 100 nm. This interlayer insulating layer 15 also fills in the defect when the protective insulating layer 14 formed by anodic oxidation has a pinhole, and also serves to maintain insulation between the lower electrode 11 and the upper bus electrode 20.

  The metal layer to be the upper bus electrode 20 has a laminated structure of the metal film lower layer 16 and the metal film upper layer 18. The metal film lower layer 16 is made of, for example, an Al—Nd alloy, and the metal film upper layer 18 is made of, for example, copper (Cu). Various metal materials such as chrome (Cr) can be used. Here, an Al—Nd alloy was used for the metal film lower layer 16, its layer thickness was about 100 nm, Cu was used for the metal film upper layer 18, and its layer thickness was about 100 nm. In some cases, a metal intermediate layer having a thickness of about 4 μm made of, for example, a pure Al film for reducing wiring resistance is interposed between the metal film lower layer 16 and the metal film upper layer 18.

  Subsequently, as shown in FIG. 8, the metal film upper layer 18 is processed into a stripe shape intersecting with the lower electrode 11 by resist patterning by screen printing and an etching process. Etching of Cu on the metal film upper layer 18 uses, for example, wet etching with a mixed aqueous solution of phosphoric acid, acetic acid, and dissipation. In this case, the electrode width of the metal film upper layer 18 is narrower than the electrode width of the metal film lower layer 16 so that the metal film upper layer 18 does not have a bowl shape. One stripe electrode of the metal film upper layer 18 is formed in one pixel. Further, other stripe electrodes adjacent to the stripe electrode indicated by the metal film upper layer 18 are not shown.

  Subsequently, as shown in FIG. 9, the metal film lower layer 16 is processed into a stripe shape intersecting the lower electrode 11 by patterning by screen printing and an etching process. One stripe electrode of the metal film lower layer 16 is also formed in one pixel. Patterning is performed by masking a portion that becomes an electron emission portion on the lower electrode 11 with a resist film 26, and etching is performed by wet etching using, for example, an aqueous solution of ammonium cerium nitrate. At that time, one side (electron source forming side) of the metal film lower layer 16 protrudes from the metal film upper layer 18 to be a contact portion 19 that secures connection with the upper electrode 13 in a later process, and is opposite to the metal film lower layer 16. On the side opposite to the electron source forming side, an undercut is formed using the metal film upper layer 18 as a mask, and a receding portion 19a is formed as a ridge for separating the upper electrode 13 in a later step.

  Thereby, the upper bus electrode (laminated film of the metal film lower layer 16 and the metal film upper layer 18) 20 that separates the upper electrode 13 in a self-aligned manner and supplies power can be formed. Note that the electrode width of the scan electrode formed by the metal film lower layer 16 and the metal film upper layer 18 varies depending on the size and resolution of the image display device, but is made as wide as possible to reduce resistance, and is half the scan line pitch. As described above, for example, approximately 300 μm to 400 μm.

Subsequently, as shown in FIG. 10, the interlayer insulating layer 15 is processed by an etching process to open an electron emission portion. The electron emission portion is sandwiched between one lower electrode 11 in the pixel and two stripe-shaped upper bus electrodes (an upper bus electrode and an adjacent upper bus electrode not shown) intersecting the lower electrode 11. It is formed at a part of the intersection of the space. The resist patterning at this time was performed using proximity exposure because of the hole pattern. Further, the etching process can be performed by dry etching using an etching gas mainly composed of CF ₄ or SF ₆ , for example.

  Finally, as shown in FIG. 11, the upper electrode 13 film is formed. Various methods can be adopted as this film formation method, but here, sputtering film formation by sputtering from above the interlayer insulating layer 15 is used. As the upper electrode 13, a transition metal or noble metal electrode having an oxidation catalytic action is effective. In particular, Pd, Pt, Rh, Ir, Ru, Os, Re, Cr, Ni, Fe, Co films or their laminated films, alloy films, Au, Pd, Pt, whose average film thickness or average particle diameter is about 4 nm or less. Rh, Ir, Ru, Os, Re, Cr, Ni, Fe, Co films or a laminated film thereof, a laminated film in which Au is laminated on an alloy film, and the like are effective. Here, for example, a laminated film of Ir, Pt, and Au is used, the film thickness ratio is 1: 2: 3, and the film thickness is, for example, about 6 nm. This film thickness is not limited to this.

  At this time, the upper electrode 13 is cut and formed by a receding portion 19a formed as a ridge of the metal film upper layer 18 on one side (right side in FIG. 10) of the adjacent stripe-shaped upper bus electrode. Separated. On the other hand, on the other side of the stripe-shaped upper bus electrode (left side in FIG. 10), the upper electrode 13 is continuously covered with the interlayer insulating layer 15 and the insulating layer 12 without disconnection due to the contact portion 19 of the metal film lower layer 16. A film is formed, and a power feeding structure to the electron source is configured.

  According to such a configuration, by providing the opening 11a in which the electrode film does not exist in a substantially square shape in a predetermined region that forms the electron emission portion of the lower electrode 11 constituting the signal line (data line), Since the planar shape of the electron emission portion is a power supply structure in which power is supplied from the four sides, in the subsequent process, when an electrical insulation failure occurs between the electron emission portion and the upper electrode 13, the four sides surrounded by the opening 11a. For example, YAG laser light is irradiated on the electrode film of the power supply portion to cut and remove the electrical junction of the electron emission portion, so that only the electron emission portion where the insulation failure has occurred is removed from the electrode film of the lower electrode 11. It can be separated into independent shapes, and can be turned off as a black spot that does not emit light in only one cell in one pixel of that part.

  As a result, there is no defect in the lower electrode 11 in which a large number of electron emission portions are arranged in a matrix. In addition, if the black spot to be unlit is in a range of about 2 to 3 at most with respect to one lower electrode 11, it is hardly recognized for visual recognition, and problems such as display defects do not occur at all. .

  Further, according to such a configuration, it is easy to remove the defect of the electron emission portion, and processing by laser irradiation can be performed in a short time. In addition, the removal area of the electron emission part by laser irradiation is significantly reduced from the current square shape, so that a normal electron emission part defect or secondary defect occurs due to the splash of the electrode film that occurs during processing. Less.

  FIG. 12 is a schematic plan view of an image display apparatus using an MIM electron source constituting one pixel in another embodiment of the image display apparatus according to the present invention. The description is omitted. 12 is different from FIG. 11 in that the shape of the electron emission portion is formed by a feeding structure in which an image signal is fed from the electrode film of the feeding portion of a total of three sides of two sides in the vertical direction and one side in the right direction. Yes.

  In such a configuration, when an electrical insulation failure with the upper electrode 13 occurs, the electrode film of the power feeding portion on the three sides surrounded by the opening 11a is irradiated with YAG laser light to electrically connect the electron emission portion. By carrying out a modification that cuts and removes the junction, the electron-emitting portion where the insulation failure has occurred is separated into an independent shape from the electrode film of the lower electrode 11 and is not considered as a black spot that does not emit light only in one cell in one pixel of that portion. It can be lit. The first embodiment can be realized by the irradiation of three places with one less laser beam irradiation.

  FIG. 13 is a schematic plan view of an image display apparatus using an MIM electron source constituting one pixel in still another embodiment of the image display apparatus according to the present invention. The description is omitted. In FIG. 13, the point different from FIG. 11 is that the shape of the electron emission part is formed by a feeding structure in which an image signal is fed from the electrode film of the feeding part on two sides in the vertical direction.

  In such a configuration, when an electrical insulation failure with the upper electrode 13 occurs, the electron emission portion is irradiated with YAG laser light on the electrode film of the feeding portion on the two sides in the vertical direction surrounded by the opening 11a. By performing a modification that cuts and removes the electrical junction, the electron-emitting portion in which insulation failure has occurred is separated into an independent shape from the electrode film of the lower electrode 11, and only one cell in one pixel at that portion does not emit light It can be turned off as a black spot. The first embodiment can be realized by two irradiations with two laser light irradiations.

  FIG. 14 is a schematic plan view of an image display apparatus using an MIM electron source constituting one pixel in another embodiment of the image display apparatus according to the present invention. The description is omitted. 14 is different from FIG. 11 in that the shape of the electron emission portion is formed by a power feeding structure in which an image signal is fed from an electrode film on a power feeding portion on one side in the right direction.

  In such a configuration, when an electrical insulation failure with the upper electrode 13 occurs, the electrode film on the feeding portion on the right side surrounded by the opening 11a is irradiated with YAG laser light to By carrying out a modification that cuts and removes the electrical junction, the electron emitting portion where the insulation failure has occurred is separated into an independent shape from the electrode film of the lower electrode 11, and a black dot that does not emit light only in one cell in one pixel of that portion Can be unlit. The first embodiment can be realized by irradiating laser light only at one place with three places.

  FIG. 15 is an explanatory diagram of an equivalent circuit example of an image display device to which the configuration of the present invention is applied. A region indicated by a broken line in FIG. 15 is a display region, and a data signal wiring d (d1, d2, d3, d4, d5, d6, d7,... Dn) and a scanning signal wiring s ( s1, s2, s3, s4,... sm) are arranged to cross each other to form an n × m matrix. Each intersection of the matrix constitutes a sub-pixel, and one group of “R”, “G”, and “B” in the figure constitutes one color pixel. The configuration of the electron source is not shown. The data signal wiring d is connected to the data line driving circuit DDR, and the scanning signal wiring s is connected to the scanning line driving circuit SDR. The data signal ds is input from the external signal source to the data line driving circuit DDR, and the scanning signal ss is similarly input to the scanning line driving circuit SDR.

  Accordingly, a two-dimensional full color image can be displayed by supplying a data signal from the data signal wiring d to the sub-pixels connected to the scanning signal wiring s that is sequentially selected. With the display device of this configuration example, a flat panel display device with a relatively low voltage and high efficiency is realized.

  FIG. 16 is a perspective view showing the entire structure of a display panel constituting the flat panel image display device, and FIG. 17 is a sectional view thereof. As described in the above embodiment, the rear panel PNL1 has the data signal wirings d1, d2, d3,... Dn and the scanning signal wirings s1, s2, s3,. It has a thin-film electron source structure composed of an sm matrix. On the other hand, as the front panel PNL2, a transparent glass substrate is used as the phosphor substrate SUB2, and the anode AD and the phosphor layer PH are formed on the inner surface thereof. The anode AD used an aluminum layer.

  The front panel PNL2 and the rear panel PNL1 are opposed to each other, and a rib-shaped partition wall SPC having a width of about 80 μm and a height of about 2.5 mm is provided on the scanning signal wiring and the scanning signal wiring in order to maintain a predetermined distance between the front panel PNL2 And fixed along the extending direction. At this time, a sealing frame MFL made of glass was installed in the periphery of both panels, and fixed using frit glass (not shown) so that the internal space sandwiched between both panels was isolated from the outside.

  When fixing the partition walls using frit glass, heating at about 400 ° C. was performed. Thereafter, the inside of the apparatus was exhausted to about 1 μPa through the exhaust pipe 303 and then sealed. In operation, a voltage of about 10 kV was applied to the anode AD on the front panel PNL2.

  In the above embodiment, the structure using the MIM type as the electron source is taken as an example. However, the present invention is not limited to this, and the present invention is also applicable to the self-luminous FPD using the various electron sources described above. The same applies.

1 is a schematic plan view illustrating a configuration of an image display device according to a first embodiment. It is a figure explaining the structure and operating principle of a MIM type electron source. It is explanatory drawing of the manufacturing process of the MIM type | mold electron source which comprises 1 pixel in Example 1 of the image display apparatus by this invention. It is explanatory drawing of the manufacturing process following FIG. 3 of the MIM type | mold electron source which comprises 1 pixel in Example 1 of the image display apparatus by this invention. FIG. 5 is an explanatory diagram of a manufacturing process subsequent to FIG. 4 for the MIM type electron source constituting one pixel in the image display apparatus according to the first embodiment of the present invention. It is explanatory drawing of the manufacturing process following FIG. 5 of the MIM type | mold electron source which comprises 1 pixel in Example 1 of the image display apparatus by this invention. FIG. 7 is an explanatory diagram of a manufacturing process subsequent to FIG. 6 for the MIM type electron source constituting one pixel in Embodiment 1 of the image display device according to the present invention. FIG. 8 is an explanatory diagram of a manufacturing process subsequent to FIG. 7 for the MIM type electron source constituting one pixel in Embodiment 1 of the image display device according to the present invention. FIG. 9 is an explanatory diagram of a manufacturing process subsequent to FIG. 8 for the MIM type electron source constituting one pixel in Embodiment 1 of the image display device according to the present invention. It is explanatory drawing of the manufacturing process following FIG. 9 of the MIM type | mold electron source which comprises 1 pixel in Example 1 of the image display apparatus by this invention. It is explanatory drawing of the manufacturing process following FIG. 10 of the MIM type | mold electron source which comprises 1 pixel in Example 1 of the image display apparatus by this invention. It is a schematic plan view of the image display apparatus using the MIM electron source which comprises 1 pixel in the other Example of the image display apparatus by this invention. It is a schematic plan view of the image display apparatus using the MIM electron source which comprises 1 pixel in the further another Example of the image display apparatus by this invention. It is a schematic plan view of the image display apparatus using the MIM electron source which comprises 1 pixel in the other Example of the image display apparatus by this invention. It is explanatory drawing of the equivalent circuit example of the image display apparatus to which the structure of this invention is applied. It is a perspective view which shows the whole structure of the display panel which comprises a flat type image display apparatus. It is sectional drawing of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Cathode substrate, 11 ... Lower electrode, 11a ... Opening part, 12 ... Insulating layer, 13 ... Upper electrode, 14 ... Protective insulating film, 15 ... Interlayer film, DESCRIPTION OF SYMBOLS 16 ... Metal film lower layer, 18 ... Metal film upper layer, 19 ... Contact part, 19a ... Recessed part, 20 ... Upper bus electrode, 23 ... In vacuum, 25 ... Resist Film 26, resist film, 30 spacer, 50 signal line drive circuit, 60 scan line drive circuit, 100 phosphor substrate, 111 red phosphor, 112 ... Green phosphor, 113 ... Blue phosphor, 120 ... Black matrix.

Claims (8)

The electron acceleration layer is sandwiched between a lower electrode and an upper electrode and between the lower electrode and the upper electrode, and is laminated with the electron acceleration layer by applying a voltage between the lower electrode and the upper electrode. A cathode substrate in which a number of thin film type electron sources emitting electrons from the upper electrode side in a region are arranged in a matrix, and a phosphor screen substrate having a plurality of color phosphors arranged corresponding to each of the thin film type electron sources An image display device comprising:
In the thin film type electron source, the lower electrode is formed in a polygonal shape in the region of the electron acceleration layer, and a power feeding portion including an electrode film of the lower electrode is formed on at least one side of the polygon. A characteristic image display device.   The image display apparatus according to claim 1, wherein the thin-film electron source has a power feeding portion formed on four sides of the polygon.   The image display apparatus according to claim 1, wherein the thin-film electron source has a power feeding portion formed on three sides of the polygon.   The image display apparatus according to claim 1, wherein the thin-film electron source has a power feeding portion formed on two sides of the polygon.   The image display apparatus according to claim 1, wherein the thin-film electron source has a power feeding portion formed on one side of the polygon.   The image display apparatus according to claim 1, wherein a length of the power feeding unit is shorter than a length of one side of the polygon.   7. The image display device according to claim 1, wherein the phosphor layer included in the phosphor screen substrate is composed of three colors of red, green, and blue. 7. The phosphor layer on the phosphor screen substrate is composed of three colors of red, green, and blue, and each phosphor layer is partitioned by a light shielding layer. The image display device described in 1.

Images