JP2007093816A - Method of manufacturing vertical comb actuator - Google Patents

Method of manufacturing vertical comb actuator Download PDF

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JP2007093816A
JP2007093816A JP2005280923A JP2005280923A JP2007093816A JP 2007093816 A JP2007093816 A JP 2007093816A JP 2005280923 A JP2005280923 A JP 2005280923A JP 2005280923 A JP2005280923 A JP 2005280923A JP 2007093816 A JP2007093816 A JP 2007093816A
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comb
protective layer
forming
thin film
conductive thin
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JP4534931B2 (en
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Takaaki Yoshihara
孝明 吉原
Hiroshi Noge
宏 野毛
Kiyohiko Kono
清彦 河野
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a vertical comb actuator by which steps are accurately formed between comb-shaped electrodes opposing to each other in a simple manufacturing process. <P>SOLUTION: The vertical steps are formed between the comb-shaped electrodes 2 and 5 opposing to each other by adjusting the film thickness of a protective layer and a conductive thin film. Thus, the steps are accurately formed between the comb-shaped electrodes opposing to each other in the simple manufacturing process. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、マイクロミラー素子やモーションセンサ等の構造体を静電気力によって駆動するバーティカルコムアクチュエータの製造方法に関する。   The present invention relates to a method for manufacturing a vertical comb actuator that drives a structure such as a micromirror element or a motion sensor by electrostatic force.

従来より、対向する2枚の櫛歯電極(バーティカルコム)を電極の延伸方向に対し垂直方向に段差を設けて配置し、所定の電圧が印加されるのに応じて櫛歯電極間に発生する静電気力によって構造体を垂直方向に駆動するバーティカルコムアクチュエータが知られている(例えば特許文献1を参照)。
特開2000−147419号公報
Conventionally, two opposing comb electrodes (vertical combs) are arranged with a step in a direction perpendicular to the extending direction of the electrodes, and are generated between the comb electrodes according to application of a predetermined voltage. A vertical comb actuator that drives a structure in the vertical direction by electrostatic force is known (see, for example, Patent Document 1).
JP 2000-147419 A

しかしながら、従来のバーティカルコムアクチュエータの製造方法では、張り合わせ工程や膜応力による反りを利用することにより上述の段差を形成するようにしていたために、マイクロミラー素子やモーションセンサ等の微細な構造体の駆動用として微細に製造する場合、製造プロセスが非常に複雑となる上に、面内方向でのばらつきを小さく抑えて段差を精度よく形成することが困難であった。   However, in the conventional method for manufacturing a vertical comb actuator, the above-described step is formed by using the warping due to the bonding process or the film stress, so that the driving of a fine structure such as a micromirror element or a motion sensor is performed. When manufacturing finely for use, the manufacturing process becomes very complicated, and it is difficult to accurately form a step by suppressing variations in the in-plane direction.

本発明は、上述した実情に鑑みて提案されたものであり、その目的は、簡単な製造プロセスによって対向する櫛歯電極間に精度よく段差を形成することが可能なバーティカルコムアクチュエータの製造方法を提供することにある。   The present invention has been proposed in view of the above-described circumstances, and an object of the present invention is to provide a method for manufacturing a vertical comb actuator capable of accurately forming a step between opposing comb electrodes by a simple manufacturing process. It is to provide.

本発明に係るバーティカルコムアクチュエータの製造方法は、対向する第1及び第2の櫛歯電極を備え、電圧が印加されるのに応じて第1及び第2の櫛歯電極間に発生する静電力を利用して構造体を駆動するバーティカルコムアクチュエータの製造方法であって、半導体基板表面上に第1の保護層を形成する工程と、第1の保護層をパターニングすることにより第1及び第2の櫛歯電極に対応する表面上に保護層を形成する工程と、第1の保護層のパターニング処理後の基板表面上に導電性薄膜を形成する工程と、導電性薄膜表面上に第2の保護層を形成する工程と、第2の保護層をパターニングすることにより第2の櫛歯電極に対応する表面上に保護層を形成する工程と、第2の保護層のパターニング処理後の基板表面に露出している前記導電性薄膜を除去する工程と、導電性薄膜を除去後の基板表面に露出している半導体基板を除去することにより櫛歯構造を形成する工程と、櫛歯構造を形成した後の基板表面に露出している保護層を除去する工程とを有し、第1の保護層と導電性薄膜の膜厚を調整することにより第1及び第2の櫛歯電極間に垂直方向の段差を形成する。   A method for manufacturing a vertical comb actuator according to the present invention includes first and second comb electrodes facing each other, and an electrostatic force generated between the first and second comb electrodes in response to voltage application. A method of manufacturing a vertical comb actuator for driving a structure using a first and second steps of forming a first protective layer on a surface of a semiconductor substrate, and patterning the first protective layer Forming a protective layer on the surface corresponding to the comb electrode, forming a conductive thin film on the surface of the substrate after patterning the first protective layer, and forming a second on the conductive thin film surface. Forming a protective layer; forming a protective layer on a surface corresponding to the second comb electrode by patterning the second protective layer; and substrate surface after patterning the second protective layer Exposed to the above Removing the conductive thin film; forming the comb-tooth structure by removing the semiconductor substrate exposed on the substrate surface after removing the conductive thin film; and forming the comb-tooth structure on the substrate surface Forming a step in the vertical direction between the first and second comb electrodes by adjusting the thickness of the first protective layer and the conductive thin film. .

本発明に係るバーティカルコムアクチュエータの製造方法によれば、簡単な製造プロセスによって対向する櫛歯電極間に精度よく段差を形成することができる。   According to the method for manufacturing a vertical comb actuator according to the present invention, a step can be formed with high accuracy between the comb electrodes facing each other by a simple manufacturing process.

以下、図面を参照して、本発明の実施形態となるバーティカルコムアクチュエータの製造方法について説明する。なお、この製造方法により製造されるバーティカルコムアクチュエータは、図1に示すように、ミラー面において光ビームを反射するミラー部1側に形成された櫛歯電極2(可動コム)と、支持部3を介してミラー部1を揺動可能な状態で支持するフレーム部4側に形成された櫛歯電極5(固定コム)とを備え、電圧が印加されるのに応じて対向する櫛歯電極2,5間に発生する静電力によってミラー部1を垂直方向に揺動することにより、光ビームの光路を切り替える。また、以下に示す図2,3は、図1に示す線分AA’におけるバーティカルコムアクチュエータの断面図を示す。   A method for manufacturing a vertical comb actuator according to an embodiment of the present invention will be described below with reference to the drawings. As shown in FIG. 1, the vertical comb actuator manufactured by this manufacturing method includes a comb electrode 2 (movable comb) formed on the mirror unit 1 side that reflects a light beam on the mirror surface, and a support unit 3. And a comb-shaped electrode 5 (fixed comb) formed on the side of the frame 4 that supports the mirror 1 in a swingable state, and is opposed to the comb-shaped electrode 2 when a voltage is applied. , 5 is used to switch the optical path of the light beam by swinging the mirror unit 1 in the vertical direction by an electrostatic force generated between them. 2 and 3 shown below are cross-sectional views of the vertical comb actuator taken along line AA ′ shown in FIG. 1.

本発明の実施形態となるバーティカルコムアクチュエータの製造方法では、始めに、図2(a)に示すように、単結晶シリコン等の支持基板11表面上に酸化膜12を形成する。なお、酸化膜12は、熱酸化法や化学的気相成長法等の方法により形成することができるが、パイロ酸化法によって形成する場合には、時間,酸素流量,温度等を制御することによって制御性よく成膜でき、2[μm]程度の膜厚まで成膜することができる。   In the vertical comb actuator manufacturing method according to the embodiment of the present invention, first, as shown in FIG. 2A, an oxide film 12 is formed on the surface of a support substrate 11 such as single crystal silicon. The oxide film 12 can be formed by a method such as a thermal oxidation method or a chemical vapor deposition method, but when formed by a pyrooxidation method, the time, oxygen flow rate, temperature, etc. are controlled. The film can be formed with good controllability and can be formed to a film thickness of about 2 [μm].

次に、図2(b)に示すように、スピン塗布法及びフォトリソグラフィ法を用いて酸化膜12の表面上にレジスタパターンを形成し、レジストパターンをエッチングマスクとして酸化膜12を選択的に除去することにより、櫛歯電極2,5の上部保護層12a,12b及びミラー部1の上部保護層12cを形成する。次に、図2(c)に示すように、図2(b)に示す基板表面上にアルミ薄膜等の導電性薄膜13をスパッタ蒸着法等により形成する。なお、導電性薄膜13の膜厚は成膜時間等の製造条件を制御することによって容易に制御することができる。   Next, as shown in FIG. 2B, a resist pattern is formed on the surface of the oxide film 12 using a spin coating method and a photolithography method, and the oxide film 12 is selectively removed using the resist pattern as an etching mask. Thus, the upper protective layers 12a and 12b of the comb electrodes 2 and 5 and the upper protective layer 12c of the mirror unit 1 are formed. Next, as shown in FIG. 2C, a conductive thin film 13 such as an aluminum thin film is formed on the substrate surface shown in FIG. The film thickness of the conductive thin film 13 can be easily controlled by controlling the manufacturing conditions such as the film formation time.

次に、図2(d)に示すように、図2(c)に示す基板表面上にレジスト材料14をスピンコートにより塗布した後、レジスト材料14をパターニングすることにより、櫛歯電極5の上部保護層を形成する。次に、図3(a)に示すように図2(d)に示す基板表面に露出している導電性薄膜13をメタルエッチング処理により除去した後、図3(b)に示すように上部保護層12b,12c及びレジスト材料14をマスクとしてD−RIE(Deep Reactive Ion Etching)処理により支持基板11をエッチングすることにより櫛歯電極2,5を形成する。そして最後に、図3(c)に示すように基板表面に露出している酸化膜12を除去した後、図3(d)に示すようにレジスト材料14を除去することにより、図1に示すバーティカルコムアクチュエータが形成される。なお、本実施形態では、櫛歯電極2,5間の垂直方向の段差は、保護層12aと導電性薄膜13の膜厚の合計値となり、バーティカルコムアクチュエータを共振する条件で駆動させることにより、この段差の数十倍の変位を有するアクチュエータとして利用することができる。   Next, as shown in FIG. 2 (d), the resist material 14 is applied onto the substrate surface shown in FIG. 2 (c) by spin coating, and then the resist material 14 is patterned to form an upper portion of the comb electrode 5 A protective layer is formed. Next, as shown in FIG. 3 (a), the conductive thin film 13 exposed on the substrate surface shown in FIG. 2 (d) is removed by metal etching, and then the upper protection is shown in FIG. 3 (b). Comb electrodes 2 and 5 are formed by etching support substrate 11 by D-RIE (Deep Reactive Ion Etching) using layers 12b and 12c and resist material 14 as a mask. Finally, after removing the oxide film 12 exposed on the substrate surface as shown in FIG. 3C, the resist material 14 is removed as shown in FIG. A vertical comb actuator is formed. In the present embodiment, the vertical step between the comb electrodes 2 and 5 is the total thickness of the protective layer 12a and the conductive thin film 13, and the vertical comb actuator is driven under a resonating condition. It can be used as an actuator having a displacement several tens of times this step.

以上の説明から明らかなように、本発明の実施形態となるバーティカルコムアクチュエータの製造方法によれば、保護層12aと導電性薄膜13の膜厚を調整することにより対向する櫛歯電極2,5間に垂直方向の段差を形成することができるので、簡単な製造プロセスによって対向する櫛歯電極間に精度よく段差を形成することができる。   As is apparent from the above description, according to the method for manufacturing the vertical comb actuator according to the embodiment of the present invention, the comb electrodes 2, 5 facing each other by adjusting the film thickness of the protective layer 12a and the conductive thin film 13 Since a vertical step can be formed between them, the step can be accurately formed between the comb electrodes facing each other by a simple manufacturing process.

以上、本発明者らによってなされた発明を適用した実施の形態について説明したが、この実施の形態による本発明の開示の一部をなす論述及び図面により本発明は限定されることはない。すなわち、上記実施の形態に基づいて当業者等によりなされる他の実施の形態、実施例及び運用技術等は全て本発明の範疇に含まれることは勿論であることを付け加えておく。   As mentioned above, although embodiment which applied the invention made by the present inventors was described, this invention is not limited by the description and drawing which make a part of indication of this invention by this embodiment. That is, it should be added that other embodiments, examples, operation techniques, and the like made by those skilled in the art based on the above-described embodiments are all included in the scope of the present invention.

本発明の実施形態となるバーティカルコムアクチュエータの構成を示す上面図である。It is a top view which shows the structure of the vertical comb actuator used as embodiment of this invention. 本発明の実施形態となるバーティカルコムアクチュエータの製造方法を示す断面工程図である。It is sectional process drawing which shows the manufacturing method of the vertical comb actuator used as embodiment of this invention. 図2に示すバーティカルコムアクチュエータの製造方法の続き示す断面工程図である。FIG. 3 is a cross-sectional process diagram illustrating a method for manufacturing the vertical comb actuator illustrated in FIG. 2.

符号の説明Explanation of symbols

1:ミラー部
2,5:櫛歯電極
3:支持部
4:フレーム部
11:支持基板
12:酸化膜
13:導電性薄膜
14:レジスト材料
1: Mirror part 2, 5: Comb electrode 3: Support part 4: Frame part 11: Support substrate 12: Oxide film 13: Conductive thin film 14: Resist material

Claims (1)

対向する第1及び第2の櫛歯電極を備え、電圧が印加されるのに応じて第1及び第2の櫛歯電極間に発生する静電力を利用して構造体を駆動するバーティカルコムアクチュエータの製造方法であって、
半導体基板表面上に第1の保護層を形成する工程と、
前記第1の保護層をパターニングすることにより前記第1及び第2の櫛歯電極に対応する表面上に保護層を形成する工程と、
前記第1の保護層のパターニング処理後の基板表面上に導電性薄膜を形成する工程と、
前記導電性薄膜表面上に第2の保護層を形成する工程と、
前記第2の保護層をパターニングすることにより前記第2の櫛歯電極に対応する表面上に保護層を形成する工程と、
前記第2の保護層のパターニング処理後の基板表面に露出している前記導電性薄膜を除去する工程と、
前記導電性薄膜を除去後の基板表面に露出している前記半導体基板を除去することにより櫛歯構造を形成する工程と、
前記櫛歯構造を形成した後の基板表面に露出している保護層を除去する工程とを有し、
前記第1の保護層と前記導電性薄膜の膜厚を調整することにより前記第1及び第2の櫛歯電極間に垂直方向の段差を形成すること
を特徴とするバーティカルコムアクチュエータの製造方法。
A vertical comb actuator that includes first and second comb electrodes facing each other, and drives the structure using electrostatic force generated between the first and second comb electrodes in response to voltage application. A manufacturing method of
Forming a first protective layer on the surface of the semiconductor substrate;
Forming a protective layer on a surface corresponding to the first and second comb electrodes by patterning the first protective layer;
Forming a conductive thin film on the substrate surface after the patterning treatment of the first protective layer;
Forming a second protective layer on the surface of the conductive thin film;
Forming a protective layer on the surface corresponding to the second comb electrode by patterning the second protective layer;
Removing the conductive thin film exposed on the substrate surface after patterning of the second protective layer;
Forming a comb-tooth structure by removing the semiconductor substrate exposed on the substrate surface after removing the conductive thin film;
A step of removing the protective layer exposed on the substrate surface after forming the comb structure,
A vertical comb step is formed between the first and second comb electrodes by adjusting the film thickness of the first protective layer and the conductive thin film.
JP2005280923A 2005-09-27 2005-09-27 Method for manufacturing vertical comb actuator Expired - Fee Related JP4534931B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007090463A (en) * 2005-09-27 2007-04-12 Matsushita Electric Works Ltd Manufacturing method of vertical comb actuator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05224751A (en) * 1992-02-10 1993-09-03 Fuji Electric Co Ltd Electrostatic actuator
JP2003241118A (en) * 2002-02-19 2003-08-27 Sumitomo Electric Ind Ltd Method of manufacturing optical switch
JP2005177974A (en) * 2003-09-22 2005-07-07 Matsushita Electric Works Ltd Method for manufacturing semiconductor structure
JP2006247793A (en) * 2005-03-11 2006-09-21 Fujitsu Ltd Interdigital electrode couple forming method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05224751A (en) * 1992-02-10 1993-09-03 Fuji Electric Co Ltd Electrostatic actuator
JP2003241118A (en) * 2002-02-19 2003-08-27 Sumitomo Electric Ind Ltd Method of manufacturing optical switch
JP2005177974A (en) * 2003-09-22 2005-07-07 Matsushita Electric Works Ltd Method for manufacturing semiconductor structure
JP2006247793A (en) * 2005-03-11 2006-09-21 Fujitsu Ltd Interdigital electrode couple forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007090463A (en) * 2005-09-27 2007-04-12 Matsushita Electric Works Ltd Manufacturing method of vertical comb actuator

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