JP2007053191A - Substrate processing apparatus and method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve accuracy of temperature control for temperature management object or temperature control unit without alteration of control constant in a substrate processing apparatus. <P>SOLUTION: In the substrate processing apparatus 1, a response characteristic of supply power for a measured temperature value is equalized to that under the condition that an actual power supply voltage 514 is equal to the reference power supply voltage 513, by obtaining the supply power through compensation of the power calculated with PID arithmetic operation with a control unit 5 based on the control constant 512, setting temperature 511, and measured temperature values of a hot plate 2 using a voltage varying value as a ratio of the reference power supply voltage 513 and actual power supply voltage 514. As explained above, the substrate processing apparatus 1 can improve the accuracy of temperature control for the hot plate 2 without alteration of the control constant 512, by compensating variation of power resulting from difference between the actual power supply voltage 514 and the reference power supply voltage 513. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a technique for processing a substrate.

  Conventionally, various processes have been performed in the manufacturing process of a semiconductor substrate or a substrate for a liquid crystal display device (hereinafter simply referred to as “substrate”). For example, in a photolithography process for forming a circuit pattern on a substrate, heat treatment such as PAB (Post Apply Bake) performed after applying a resist on the substrate and PEB (Post Exposure Bake) performed after pattern exposure is performed. .

  In an apparatus for performing heat treatment, a room temperature substrate is placed on a high temperature hot plate whose temperature is adjusted to a predetermined set temperature and heated. In such an apparatus, when the substrate is placed on the hot plate, the temperature of the hot plate is instantaneously lowered, but a signal from a temperature sensor provided on the hot plate is fed back and temperature control is performed. The temperature of the hot plate is returned to the set temperature.

In the temperature control of the hot plate, a control method such as PID (Proportional-Integral-Derivative) control is used. For example, in Patent Document 1, a control constant is used according to the processing content performed by the hot plate as a heating source. There is disclosed a technique for obtaining a control mode (that is, a temperature profile indicating a relationship between a hot plate temperature and an elapsed time) suitable for processing contents by changing a certain PID constant.
JP 2000-294473 A

  In recent years, miniaturization of circuit patterns formed on a substrate has been demanded for high integration of semiconductor devices and high image quality of liquid crystal display devices. For this reason, in the photolithography process, a light source that emits far-ultraviolet light having a shorter wavelength is used as a light source for exposing the substrate. Some light from such a light source has a low intensity. Therefore, in order to compensate for the insufficient light intensity from the light source, a chemically amplified resist that is a photosensitive material that reacts with heat and increases the line width of the resist pattern is used. Since such a chemically amplified resist is very sensitive to temperature changes, it is necessary to control the temperature of the hot plate with high accuracy to obtain a predetermined temperature profile.

  By the way, an apparatus for performing heat treatment is usually delivered to a factory of a user who uses the apparatus after a control constant relating to temperature control of the hot plate is adjusted in a manufacturing factory that manufactures the apparatus. In such a device, for example, when the power supply voltage at the user's factory is different from the power supply voltage at the device's manufacturing factory, or when the power supply voltage at the user's factory varies over time, when using the device. If the applied voltage is different from the voltage applied to the device when adjusting the control constant, the power supplied to the hot plate is slightly different than when adjusting the control constant, and the hot plate temperature profile is desired. It will deviate slightly from the profile.

  A slight deviation in the temperature profile due to the difference in the supplied power causes variations in the line width of the resist pattern. Such variations in line width are within the error range in the accuracy of the conventional circuit pattern, but when the circuit pattern is further miniaturized, it does not fall within the error range and shows the uniformity of the minimum dimension of the circuit pattern. There is a risk of variations in CDU (Critical Dimension Uniformity).

  As a method for improving the accuracy of temperature control, it is conceivable to readjust the control constant after delivering the device to the user's factory. In this case, however, the work time for delivery of the device increases. End up. In addition, when the voltage of the power supply changes over time or the device is moved to another factory, it is necessary to adjust the control constant again.

  The present invention has been made in view of the above problems, and an object of the present invention is to improve the accuracy of temperature control for a temperature management target or a temperature adjustment unit without changing a control constant.

  The invention according to claim 1 is a substrate processing apparatus for processing a substrate, a temperature adjusting unit for adjusting a temperature of a temperature management target, which is a substance used for processing the substrate or the substrate, and the temperature management target Or a temperature sensor that measures the temperature of the temperature control unit, a power source that is electrically connected to the temperature control unit, a control constant that is disposed between the power source and the temperature control unit and that is determined in advance. A control unit for controlling the temperature of the temperature management target or the temperature adjustment unit to a desired value by supplying power to the temperature adjustment unit while controlling power from the power source based on a temperature measurement value by the temperature sensor; And the control unit calculates a calculated power obtained based on the control constant and the temperature measurement value, a ratio between a reference power supply voltage determined in association with the control constant and an actual power supply voltage of the power supply. When the actual power supply voltage is equal to the reference power supply voltage, the response characteristic of the power supply with respect to the temperature measurement value is obtained by correcting the power supply using a voltage fluctuation value to obtain the power supply supplied to the temperature adjustment unit. A power correction unit that is equivalent to

  A second aspect of the present invention is the substrate processing apparatus according to the first aspect, further comprising a power supply voltage acquisition unit that continuously acquires the actual power supply voltage and updates the voltage fluctuation value.

A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the calculated power is W ₀ , the reference power supply voltage is V ₀ , and the actual power supply voltage is V _x. The supply power W _x ,

Ask for.

  A fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein the control unit uses the control constant and the temperature measurement value to perform PID (Proportional-Integral-Derivative). ) The calculated power is obtained by performing an operation.

  A fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the temperature adjusting unit heats the substrate in contact with or close to a main surface of the substrate. It is a plate.

  According to a sixth aspect of the present invention, there is provided a substrate processing method for performing processing on a substrate by adjusting a temperature of a temperature management target, which is a substance used for processing the substrate or the substrate, by a temperature adjusting unit supplied with power from a power source. A) a step of measuring the temperature of the temperature management object or the temperature control unit, b) a predetermined control constant, and power from the power source based on the temperature measurement value measured in the step a) And controlling the temperature of the temperature management object or the temperature control unit to a desired value by supplying the temperature control unit while controlling c), and c) the steps a) and b until the substrate processing is completed. And b2) associating the calculated power with the control constant, and b2) associating the calculated power with the control constant. Fixed The temperature measurement value is obtained by obtaining a supply power to be supplied to the temperature management object or the temperature control unit by correcting using a voltage fluctuation value that is a ratio of the reference power supply voltage and the actual power supply voltage of the power supply. A response characteristic of the supplied power with respect to is equivalent to the case where the actual power supply voltage is equal to the reference power supply voltage.

  In the present invention, it is possible to improve the accuracy of temperature control for the temperature management object or the temperature adjustment unit without changing the control constant.

  FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 is an apparatus that performs a process involving heating on a semiconductor substrate 9 (hereinafter referred to as “substrate 9”).

  As shown in FIG. 1, the substrate processing apparatus 1 includes a hot plate 2 that is a temperature adjusting unit that adjusts the temperature of a substrate 9 placed on the upper surface, and a temperature near the upper surface of the hot plate 2 that is attached to the hot plate 2. A temperature sensor 21 (for example, a thermocouple) that measures the temperature, a hot plate 2 and a chamber body 3 that houses the temperature sensor 21 in the internal space, a power source that is provided outside the chamber body 3 and is electrically connected to the hot plate 2 4 and a control unit 5 disposed between the power source 4 and the hot plate 2 to control the temperature of the hot plate 2 to a desired value.

  In the hot plate 2, a resistance heating wire such as a nichrome wire that generates heat when an electric current flows is disposed inside, and the substrate 9 is heated by coming into contact with the lower surface of the substrate 9 that is a temperature management target. In the hot plate 2, the amount of heat generated changes as the power supplied from the power source 4 changes.

  The control unit 5 includes a storage unit 51 that stores various types of information, a calculation unit 52 that executes various types of calculations, and an input unit 53 into which information is input. The storage unit 51 stores the preset temperature 511 of the hot plate 2, the control constant 512 obtained experimentally in advance, and the voltage value of the reference power supply used when determining the control constant 512 (that is, A reference power supply voltage 513 (which is determined in association with the control constant 512) and an actual power supply voltage 514 which is a voltage value of the power supply 4 are stored. The actual power supply voltage 514 is input from the input unit 53 by the operator.

  In the control unit 5, calculation is performed by the calculation unit 52 based on the control constant 512 stored in the storage unit 51 and the temperature of the hot plate 2 measured by the temperature sensor 21 (hereinafter referred to as “temperature measurement value”). When the voltage of the power supply 4 (that is, the actual power supply voltage 514) is assumed to be equal to the reference power supply voltage 513, the power to be supplied from the power supply 4 to the hot plate 2 (hereinafter referred to as “calculated power”). Is required.

  The control unit 5 corrects the calculated power based on the difference between the reference power supply voltage 513 and the actual power supply voltage 514 to obtain power that is actually supplied to the hot plate 2 (hereinafter referred to as “supply power”). A correction unit 54 is further provided. In the substrate processing apparatus 1, the temperature equal to the supply power obtained by the power correction unit 54 based on the power from the power source 4 by the control unit 5 is supplied to the hot plate 2, so that the temperature of the hot plate 2 is continuously increased. (So-called temperature control is performed).

  FIG. 2 is a diagram showing a flow of processing of the substrate 9 by the substrate processing apparatus 1. FIG. 3 is a diagram showing an ideal relationship (that is, temperature profile) between the temperature of the hot plate 2 and the elapsed time when the substrate 9 is processed. In the present embodiment, the substrate 9 is a semiconductor substrate immediately after a chemically amplified resist is applied and pattern exposure is performed. The substrate 9 is subjected to a heat treatment (PEB: Post Exposure Bake) by the substrate processing apparatus 1 so as to be bonded at the time of exposure. A chemical reaction is activated that catalyzes the amplification of the imaged latent image.

  In the substrate processing apparatus 1, power is continuously supplied from the power source 4 to the hot plate 2, and the temperature of the hot plate 2 is substantially maintained at the set temperature 511. In this state, first, the loading / unloading port 31 of the chamber body 3 is opened (or from the loading / unloading port 31 opened in advance), the substrate 9 is loaded into the chamber body 3, and the substrate 9 is placed on the hot plate 2. The loading / unloading port 31 of the chamber body 3 is closed. Inside the chamber body 3, the temperature of the hot plate 2 is lowered by coming into contact with the room temperature substrate 9. On the other hand, in the substrate processing apparatus 1, PID (Proportional-Integral-Derivative) control is continuously performed on the temperature of the hot plate 2.

  In the PID control, first, the temperature sensor 21 that continuously measures the temperature of the hot plate 2 measures the temperature of the hot plate 2 and sends the temperature measurement value to the control unit 5 (step S11). In the control unit 5, the difference between the temperature measurement value from the temperature sensor 21 and the set temperature 511 stored in the storage unit 51 is obtained by the calculation unit 52, and the above temperature is returned to return the temperature measurement value to the set temperature 511. A PID calculation is performed using the difference and the control constant 512 to obtain a calculated power (step S12). As described above, when the actual power supply voltage 514 is assumed to be equal to the reference power supply voltage 513, the calculated power is such that the temperature of the hot plate 2 becomes the same profile as the ideal temperature profile shown in FIG. This is the power to be supplied to the hot plate 2. In the calculation unit 52, a ratio (so-called output%) of the calculated power to the maximum power (fixed value) supplied from the power source 4 to the hot plate 2 may be obtained.

When the calculated power is obtained, the power correction unit 54 of the control unit 5 obtains a voltage fluctuation value that is a ratio of both voltages from the reference power supply voltage 513 and the actual power supply voltage 514 stored in the storage unit 51, and this voltage The calculated power is corrected using the fluctuation value, and the supplied power (that is, the power that should actually be supplied to the hot plate 2) is obtained (step S13). More specifically, the calculated power is W ₀ , the reference power supply voltage 513 is V ₀ , the actual power supply voltage 514 is V _x , and the supply power W _x is obtained as shown in Equation 3.

  Then, the power supplied from the power source 4 to the hot plate 2 is adjusted by the control unit 5 to be equal to the supply power obtained by the power correction unit 54 (step S14).

  In the substrate processing apparatus 1, the temperature of the hot plate 2 is measured by the temperature sensor 21, the calculated power and the supplied power are calculated by the control unit 5, and the power supplied to the hot plate 2 is adjusted by the control unit 5 (steps S 11 to S 14). ) Is repeated at a high speed (step S15), whereby PID control is executed. As a result, the temperature of the hot plate 2 rises to reach the set temperature 511 and is kept constant at the set temperature 511. Thereafter, the carry-in / out port 31 of the chamber body 3 is opened, the substrate 9 is carried out, and the heat treatment for the substrate 9 is completed.

  By the way, when the actual power supply voltage 514 of the power supply 4 is equal to the reference power supply voltage 513, the temperature of the hot plate 2 (that is, temperature measurement) measured by a predetermined control constant (so-called PID parameter) 512 and the temperature sensor 21. 3, the ideal temperature profile shown in FIG. 3 can be obtained by supplying the calculated power obtained based on the value) to the hot plate 2 as the supplied power as it is, but the actual power supply voltage 514 is actually the reference power supply voltage. Since it is slightly different from 513, the temperature profile is slightly different from that shown in FIG. 3 simply by performing PID control based on the control constant 512.

  In contrast, in the heat treatment of the substrate 9 by the substrate processing apparatus 1, the control unit 5 obtains calculated power based on the control constant 512 and the temperature measurement value of the hot plate 2, and is used when determining the control constant 512. The calculated power is corrected using the voltage fluctuation value which is the ratio of the reference power supply voltage 513 and the actual power supply voltage 514 of the power supply 4 to obtain the supplied power. Then, the power supplied from the power source 4 to the hot plate 2 is made equal to the supplied power obtained by the power correction unit 54.

Here, since the voltage applied to the hot plate 2 fluctuates in proportion to the fluctuation of the actual power supply voltage 514, the fluctuation amount that the calculated power fluctuates from the ideal condition is the actual power supply voltage 514, the reference power supply voltage 513, and so on. Is proportional to the square of the ratio. Therefore, by calculating the supply power by multiplying the calculated power by the square of the ratio of the reference power supply voltage 513 (V ₀ ) to the actual power supply voltage 514 (V _x ), the supply power is calculated as the calculated power under ideal conditions. Can be matched. As a result, the temperature of the hot plate 2 is controlled to be the same profile as the temperature profile shown in FIG. That is, the response characteristic of the supplied power with respect to the temperature measurement value is equivalent to the case where the actual power supply voltage 514 is equal to the reference power supply voltage 513.

  As described above, the substrate processing apparatus 1 corrects the power fluctuation caused by the difference between the actual power supply voltage 514 and the reference power supply voltage 513 without changing the control constant 512 according to the actual power supply voltage 514. The accuracy of temperature control for the hot plate 2 can be improved. As a result, the quality of the heat treatment for the substrate 9 can be improved, and variations in the line width of the resist pattern can be suppressed. Thereby, a circuit pattern can be formed with high accuracy in a subsequent process.

  Next, the substrate processing apparatus 1a according to the second embodiment will be described. FIG. 4 is a diagram showing the configuration of the substrate processing apparatus 1a. In the substrate processing apparatus 1a, as in the first embodiment, heat treatment is performed on the substrate 9 by applying heat to the substrate 9 by the hot plate 2. Is called. As shown in FIG. 4, the substrate processing apparatus 1 a includes a power supply voltage acquisition unit 6 that continuously acquires the voltage of the power supply 4 and updates the actual power supply voltage 514 stored in the storage unit 51 of the control unit 5. Other configurations are the same as those in FIG. 1, and the same reference numerals are given in the following description.

  Similar to the first embodiment, the substrate processing apparatus 1a includes a hot plate 2, a temperature sensor 21, a chamber body 3, a power source 4, and a control unit 5. The control unit 5 includes a storage unit 51, a calculation unit 52, An input unit 53 and a power correction unit 54 are provided. The storage unit 51 stores a set temperature 511, a control constant 512, a reference power supply voltage 513, and an actual power supply voltage 514.

  FIG. 5 is a diagram showing a part of the processing flow of the substrate 9 by the substrate processing apparatus 1a. The processing operation of the substrate 9 by the substrate processing apparatus 1a is substantially the same as in the first embodiment, and steps S21 and S22 shown in FIG. 5 are performed between steps S12 and S13 shown in FIG. Only the difference.

  In the substrate processing apparatus 1a, similarly to the first embodiment, power is continuously supplied from the power source 4 to the hot plate 2, and the temperature of the hot plate 2 is substantially maintained at the set temperature 511. . In this state, first, the substrate 9 is carried into the chamber body 3 and placed on the hot plate 2, and the temperature of the hot plate 2 decreases due to contact with the substrate 9 at room temperature. On the other hand, in the substrate processing apparatus 1a, PID control is continuously performed with respect to the temperature of the hot plate 2.

  In the PID control, first, the temperature of the hot plate 2 is measured by the temperature sensor 21 (step S11), and the control unit 5 sets the difference between the set temperature 511 and the temperature measurement value from the temperature sensor 21 and the control constant 512. The PID calculation is performed to obtain the calculated power (step S12).

  When the calculated power is obtained, the voltage of the power supply 4 is measured by the power supply voltage acquisition unit 6 (step S21), and the acquired voltage value (hereinafter referred to as “voltage measurement value”) is stored in the storage unit 51 of the control unit 5. The actual power supply voltage 514 is updated so as to be equal to the voltage measurement value (step S22). Subsequently, the power correction unit 54 obtains a voltage fluctuation value that is a ratio between the reference power supply voltage 513 and the actual power supply voltage 514 (that is, a voltage measurement value by the power supply voltage acquisition unit 6), and calculates using the voltage fluctuation value. The power is corrected and the supplied power is obtained (step S13). In other words, in the control unit 5, the power supply voltage acquisition unit 6 updates the voltage fluctuation value, and the supplied power is obtained using the updated voltage fluctuation value. The voltage measurement of the power supply 4 and the update of the actual power supply voltage 514 (steps S21 and S22) by the power supply voltage acquisition unit 6 are the measurement of the temperature of the hot plate 2 (step S11) or the calculation of the calculated power (step S12). May be performed in parallel.

  When the supply power is obtained, the power supplied from the power source 4 to the hot plate 2 is adjusted by the control unit 5 to be equal to the supply power obtained by the power correction unit 54 (step S14).

  In the substrate processing apparatus 1a, temperature measurement of the hot plate 2, calculation of calculated power, voltage measurement of the power supply 4, update of the actual power supply voltage 514, calculation of supply power, and adjustment of power supplied to the hot plate 2 (steps) S11, S12, S21, S22, S13, and S14) are repeated at high speed (step S15), thereby executing PID control. As a result, the temperature of the hot plate 2 rises to reach the set temperature 511 and is kept constant at the set temperature 511. Thereafter, the substrate 9 is unloaded from the chamber body 3 and the heat treatment for the substrate 9 is completed.

  Also in the substrate processing apparatus 1a, as in the first embodiment, the response characteristic of the supplied power with respect to the temperature measurement value is obtained by correcting the power fluctuation caused by the difference between the actual power supply voltage 514 and the reference power supply voltage 513. This is equivalent to the case where the actual power supply voltage 514 is equal to the reference power supply voltage 513. As a result, the accuracy of temperature control for the hot plate 2 can be improved without changing the control constant 512 in accordance with the actual power supply voltage 514.

  In the substrate processing apparatus 1 a, in particular, the actual power supply voltage 514 is continuously acquired and updated by the power supply voltage acquisition unit 6, and the calculated power is corrected using the updated actual power supply voltage 514. As a result, the temporal variation of the actual power supply voltage 514 can be corrected, and the temperature control accuracy for the hot plate 2 can be further improved. Thereby, the quality of the heat treatment for the substrate 9 can be further improved. The power supply voltage acquisition unit 6 may be a function realized by the control unit 5.

  Next, a substrate processing apparatus 1b according to a third embodiment will be described. The substrate processing apparatus 1b is a substrate developing apparatus that applies a developing solution to the main surface of the substrate 9, and FIG. 6 is a diagram illustrating a configuration of the substrate processing apparatus 1b. As shown in FIG. 6, the substrate processing apparatus 1 b includes a chuck 71 that holds the substrate 9 from below, a rotation mechanism 72 that rotates the substrate 9 together with the chuck 71, a processing cup 73 that covers the outer periphery of the chuck 71, and development of the substrate 9. A tank 74 that stores a developer 91 that is a substance used for processing, a nozzle 75 that is disposed above the chuck 71 and drops the developer 91 on the substrate 9, and a developer from the tank 74 to the nozzle 75. A developer pipe 76 serving as a supply path 91 is provided. A control unit 5 similar to that of the first embodiment is also provided.

  The substrate processing apparatus 1b further includes a temperature adjusting unit 2a that adjusts the temperature by applying heat to the developing solution 91 inside the developing solution pipe 76. The temperature adjusting unit 2a surrounds the outer periphery of the developing solution pipe 76. A hot water pipe 22 that is a heavy pipe and in which water for heat exchange flows is provided, and a heater 23 that heats the water in the hot water pipe 22. The substrate processing apparatus 1 b also includes a temperature sensor 21 that measures the temperature of water in the hot water pipe 22. The heater 23 of the temperature adjusting unit 2a is connected to the power source 4 via the control unit 5, and the power supplied from the power source 4 to the heater 23 is controlled by the control unit 5 based on the water temperature in the hot water pipe 22. As a result, the temperature of the water in the hot water pipe 22 is controlled to a desired value, whereby the developer 91 in the developer pipe 76 is heated to a desired temperature. Note that the temperature of the heater 23 may be measured by the temperature sensor 21 instead of the water temperature in the hot water pipe 22.

  In the substrate processing apparatus 1b, after the developer 91 heated to a desired temperature by the temperature adjusting unit 2a is dropped onto the substrate 9 from the nozzle 75, the rotation of the substrate 9 by the rotating mechanism 72 causes the centrifugal force. The developing solution 91 is spread over the entire upper surface of the substrate 9 and the developing process is performed on the substrate 9.

  In the substrate processing apparatus 1b, based on the control constant 512 determined in advance, the water temperature in the hot water pipe 22 measured by the temperature sensor 21 (that is, the temperature measurement value), and the set temperature 511, the first implementation is performed. The calculated power is obtained in the same manner as in the embodiment, and the calculated power is corrected using the voltage fluctuation value that is the ratio of the actual power supply voltage 514 and the reference power supply voltage 513 to obtain the supplied power. And the electric power supplied from the power supply 4 to the heater 23 of the temperature control part 2a is adjusted by the control part 5, and it is made equal to the said electric power supply, The water temperature in the hot water piping 22 is made into a desired value.

  As described above, also in the substrate processing apparatus 1b, the supply power for the temperature measurement value is corrected by correcting the power fluctuation caused by the difference between the actual power supply voltage 514 and the reference power supply voltage 513, as in the first embodiment. Is equivalent to the case where the actual power supply voltage 514 is equal to the reference power supply voltage 513. As a result, the accuracy of temperature control on the developer 91 can be improved without changing the control constant 512 in accordance with the actual power supply voltage 514.

  As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment, A various change is possible.

  For example, in the substrate processing apparatus according to the first and second embodiments, the substrate 9 is placed on the proximity ball provided on the upper surface of the hot plate 2, and the hot plate 2 close to the main surface of the substrate 9. Thus, the substrate 9 may be heated. Further, instead of the hot plate 2, a light source such as a halogen lamp is provided as a heating source (that is, a temperature adjusting unit), and the substrate 9 is subjected to heat treatment by being irradiated with light toward the main surface of the substrate 9. Also good.

  The temperature sensor 21 is not limited to the one that directly contacts the hot plate 2 or the temperature adjusting unit 2a, such as a thermocouple. For example, the radiation temperature that measures the temperature of the hot plate 2 away from the hot plate 2 is measured. A meter may be used as the temperature sensor 21. In addition, the object whose temperature is measured by the temperature sensor 21 is not necessarily the water in the hot plate 2 for adjusting the temperature by applying heat to the substrate 9 or the developer 91 or the water in the hot water pipe 22 of the temperature adjusting unit 2a. Rather, the temperature of the substrate 9 or the developer 91 that is the temperature management target is measured by the temperature sensor 21, and is supplied to the hot plate 2 or the heater 23 of the temperature adjustment unit 2a based on the measured value and the set temperature 511. The power may be adjusted. Note that the set temperature 511 stored in the storage unit 51 may change according to the elapsed time from the start of processing. That is, the temperature profile itself may be stored as the set temperature 511.

  The calculation of the calculated power by the control unit 5 is not necessarily performed by PID control, and the calculated power may be obtained by other feedback control. In the above embodiment, the power supplied from the power source 4 to the hot plate 2 or the like is adjusted by the control unit 5. If the resistance of the hot plate 2 or the like is known, the control unit 5 The voltage applied to the plate 2 may be adjusted similarly to the power.

  In the substrate processing apparatus according to the first and second embodiments, not only the heat treatment (PEB) on the substrate 9 on which pattern exposure has been performed, but also, for example, the volatile components in the resist film with respect to the substrate after resist application Heat treatment (PAB: Post Apply Bake) performed for the purpose of removing the resist, or heat treatment on the substrate after development processing for the purpose of curing the resist film and improving the degree of adhesion to the substrate may be performed. Further, the substrate processing apparatus may be used for heat treatment or the like for volatilizing and removing excess solvent from the antireflection film applied and formed on the substrate in the formation processing of the antireflection film on the substrate before resist application.

  In the substrate processing apparatus according to the first and second embodiments, the amount of heat applied to the substrate 9 by the hot plate 2 is gradually decreased, whereby the temperature of the substrate is set to room temperature (or alternatively according to a predetermined temperature profile). A heat treatment that lowers the temperature to a temperature between room temperature and a temperature before the heat treatment may be performed.

  Further, instead of the hot plate 2, a cool plate including a Peltier element as a cooling source may be provided in the chamber body 3 as a temperature adjusting unit. Also in this case, the calculated power is obtained based on the predetermined control constant 512 and the temperature of the cool plate measured by the temperature sensor 21, and the voltage fluctuation value which is the ratio between the actual power supply voltage 514 and the reference power supply voltage 513 is obtained. Is used to correct the calculated power to obtain the supplied power. Then, the temperature of the cool plate is lowered to a desired temperature according to a predetermined temperature profile by adjusting the power supplied from the power source 4 to the Peltier element to be equal to the supplied power by the control unit 5. As described above, in the substrate processing apparatus, even when the substrate is cooled by the cool plate, the temperature of the substrate processing apparatus is corrected by correcting the power fluctuation caused by the difference between the actual power supply voltage 514 and the reference power supply voltage 513. The response characteristic of the supplied power with respect to the measured value is equivalent to the case where the actual power supply voltage 514 is equal to the reference power supply voltage 513. As a result, it is possible to improve the accuracy of temperature control for the cool plate which is the temperature adjusting unit without changing the control constant 512.

  The substrate processing apparatus 1b according to the third embodiment is used not only for the application of the developer to the substrate (that is, the development process) but also for the prewetting process and the application of the resist solution to the substrate before the development process, for example. Also good. In this case, the temperature management target whose temperature is adjusted by the heat applied by the temperature adjusting unit 2a is pure water or a resist solution, which is a substance used for substrate processing. Further, a polyimide liquid or SOG (Spin On Glass) liquid applied to form a surface protective film or an insulating film on the substrate may be a temperature management target as a substance used for processing the substrate.

  In the substrate processing apparatus, air supplied to a processing space where a substrate is processed from an air conditioning unit (ACU: Air Conditioning Unit) may be a temperature management target as a substance used for processing the substrate. In this case, for example, the temperature adjusting unit that heats (or cools) the air supply pipe is controlled so that the temperature of the air passing through the air supply port provided in the processing space becomes the set temperature. In such a substrate processing apparatus, for example, a resist solution whose resist film thickness changes depending on the temperature and humidity of the atmosphere in the processing space is applied. Further, development processing of the substrate after pattern exposure may be performed.

  The substrate processing apparatus according to the above-described embodiment may be used for semiconductor substrate annealing and impurity activation processing, and for various other heating and cooling processes such as oxidation and CVD (Chemical Vapor Deposition). It may be used. The substrate processing apparatus can be used not only for processing a semiconductor substrate, but also for processing a substrate for a flat panel display device such as a liquid crystal display device or a plasma display device, a substrate for a photomask, or a substrate for an optical disk. it can.

It is a figure which shows the structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a figure which shows the flow of a process of a board | substrate. It is a figure which shows the relationship between the temperature of a hotplate, and elapsed time. It is a figure which shows the structure of the substrate processing apparatus which concerns on 2nd Embodiment. It is a figure which shows the flow of a process of a board | substrate. It is a figure which shows the structure of the substrate processing apparatus which concerns on 3rd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1a, 1b Substrate processing apparatus 2 Hot plate 2a Temperature adjustment part 4 Power supply 5 Control part 6 Power supply voltage acquisition part 9 Substrate 21 Temperature sensor 54 Power correction part 91 Developer 512 Control constant 513 Reference power supply voltage 514 Actual power supply voltage S11- S15, S21, S22 Step

Claims (6)

A substrate processing apparatus for processing a substrate,
A temperature adjustment unit for adjusting the temperature of a temperature management target, which is a substrate or a substance used for processing the substrate;
A temperature sensor that measures the temperature of the temperature management target or the temperature control unit;
A power source electrically connected to the temperature control unit;
By being disposed between the power source and the temperature adjustment unit and supplying power to the temperature adjustment unit while controlling power from the power source based on a predetermined control constant and a temperature measurement value by the temperature sensor. A control unit that controls the temperature of the temperature management target or the temperature adjustment unit to a desired value;
With
The control unit calculates a calculated power obtained based on the control constant and the temperature measurement value, a voltage fluctuation value which is a ratio between a reference power supply voltage determined in association with the control constant and an actual power supply voltage of the power supply. The power that is corrected by using the power supply to be supplied to the temperature adjustment unit, and that makes the response characteristic of the power supply to the temperature measurement value equal to the case where the actual power supply voltage is equal to the reference power supply voltage A substrate processing apparatus comprising a correction unit. The substrate processing apparatus according to claim 1,
The substrate processing apparatus further comprising: a power supply voltage acquisition unit that continuously acquires the actual power supply voltage and updates the voltage fluctuation value. The substrate processing apparatus according to claim 1, wherein:
Assuming that the calculated power is W ₀ , the reference power supply voltage is V ₀ , and the actual power supply voltage is V _x , the control unit sets the supplied power W _x to

A substrate processing apparatus obtained by the following. A substrate processing apparatus according to any one of claims 1 to 3,
The substrate processing apparatus, wherein the control unit obtains the calculated power by performing a PID (Proportional-Integral-Derivative) operation using the control constant and the temperature measurement value. The substrate processing apparatus according to claim 1, wherein:
The substrate processing apparatus, wherein the temperature adjusting unit is a hot plate that heats the substrate in contact with or close to a main surface of the substrate. A substrate processing method for performing processing on a substrate by adjusting the temperature of a temperature management target, which is a substance used for processing the substrate or the substrate by a temperature adjustment unit to which power is supplied from a power source,
a) a step of measuring the temperature of the temperature control target or the temperature control unit;
b) The temperature management object or the temperature by supplying power to the temperature adjustment unit while controlling power from a power source based on a predetermined control constant and a temperature measurement value measured in the step a) Controlling the temperature of the adjusting unit to a desired value;
c) a step of continuously repeating the step a) and the step b) until the processing of the substrate is completed;
With
Step b)
b1) obtaining calculated power based on the control constant and the temperature measurement value;
b2) The calculated power is corrected by using a voltage fluctuation value which is a ratio of a reference power supply voltage determined in association with the control constant and an actual power supply voltage of the power supply, and is applied to the temperature management object or the temperature adjustment unit. Obtaining a supply power to be supplied, and making the response characteristic of the supply power to the temperature measurement value equal to the case where the actual power supply voltage is equal to the reference power supply voltage;
A substrate processing method comprising:

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