TWI803747B - Exposure device, and article manufacturing method - Google Patents
Exposure device, and article manufacturing method Download PDFInfo
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- TWI803747B TWI803747B TW109114012A TW109114012A TWI803747B TW I803747 B TWI803747 B TW I803747B TW 109114012 A TW109114012 A TW 109114012A TW 109114012 A TW109114012 A TW 109114012A TW I803747 B TWI803747 B TW I803747B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Abstract
本發明提供曝光裝置及物品製造方法。有利於兼顧投影光學系統的光學性能的校正性能與生產率。曝光裝置具有:投影光學系統,將光罩的圖案投影到基板;供給部,將折射率互不相同的多種氣體以預先設定的混合率即設定混合比來混合而得的混合氣體供給到投影光學系統的內部的光學元件間的空間;控制部,藉由控制設定混合比來對投影光學系統的成像特性進行校正並對前述基板進行曝光。前述控制部獲取表示前述供給部以固定的混合比供給混合氣體時的前述成像特性的演變的響應特性,控制部在將前述設定混合比設定為目標混合比並對前述基板進行曝光時,在前述成像特性轉變為穩定狀態之前的過渡期間中,將前述設定混合比設定為依據前述響應特性對前述目標混合比進行校正而得的值並對前述基板進行曝光。The invention provides an exposure device and an article manufacturing method. It is advantageous to balance the correction performance and productivity of the optical performance of the projection optical system. The exposure device includes: a projection optical system for projecting the pattern of the mask onto the substrate; a supply unit for supplying a mixed gas obtained by mixing a plurality of gases with different refractive indices at a preset mixing ratio, that is, a set mixing ratio, to the projection optical system. The space between the optical elements inside the system; the control unit corrects the imaging characteristics of the projection optical system and exposes the aforementioned substrate by controlling and setting the mixing ratio. The control unit acquires a response characteristic indicating evolution of the imaging characteristics when the supply unit supplies the mixed gas at a fixed mixing ratio, and when the control unit sets the set mixing ratio as a target mixing ratio and exposes the substrate, During the transition period before the imaging characteristic changes to a stable state, the set mixture ratio is set to a value obtained by correcting the target mixture ratio according to the response characteristic, and the substrate is exposed.
Description
本發明關於曝光裝置及物品製造方法。The present invention relates to an exposure device and an article manufacturing method.
伴隨著近年來半導體器件的高集成化的發展,對曝光裝置的光學性能的要求也越來越高。作為妨礙曝光裝置的光學性能提高的重要原因,能夠列舉出光學性能會受到投影光學系統內外的氣壓變化、溫度變化等環境變化的影響。With the development of high integration of semiconductor devices in recent years, the requirements for the optical performance of the exposure device are also getting higher and higher. As an important factor that hinders the improvement of the optical performance of the exposure apparatus, the optical performance is affected by environmental changes such as air pressure changes inside and outside the projection optical system, temperature changes, and the like.
針對這樣的環境變化,存在如下方法,向投影光學系統內的空間供給折射率不同的兩種以上氣體,藉由改變氣體的混合率來使空間的折射率變化來校正倍率像差(例如專利文獻1、2)。
先前技術文獻
專利文獻In response to such environmental changes, there is a method of supplying two or more types of gases with different refractive indices to the space in the projection optical system, and correcting lateral aberration by changing the mixing ratio of the gases to change the refractive index of the space (for example,
專利文獻1:日本特開平5-210049號公報 專利文獻2:日本特開平5-144700號公報。Patent Document 1: Japanese Patent Application Laid-Open No. 5-210049 Patent Document 2: Japanese Patent Application Laid-Open No. 5-144700.
發明所要解決的問題The problem to be solved by the invention
在改變氣體的混合率來校正投影光學系統的光學性能的情況下,在投影光學系統的空間內置換氣體並至光學性能穩定為止需要長時間。以往,在光學性能穩定之前,曝光裝置停止曝光並待機。因此,曝光裝置的停機時間長,生產率下降。When changing the mixing rate of the gas to correct the optical performance of the projection optical system, it takes a long time to replace the gas in the space of the projection optical system and stabilize the optical performance. Conventionally, the exposure device stops exposure and stands by until the optical performance becomes stable. Therefore, the downtime of the exposure apparatus is long and the productivity is lowered.
本發明的目的在於提供例如有利於兼顧投影光學系統的光學性能的校正性能與生產率這兩者的曝光裝置。 用於解決問題的方案An object of the present invention is to provide, for example, an exposure apparatus that is advantageous in both correction performance and productivity of optical performance of a projection optical system. solutions to problems
根據本發明的第一方面,提供對基板進行曝光的曝光裝置,前述曝光裝置特徵在於,具有:投影光學系統,其將光罩的圖案投影到前述基板;供給部,其將混合氣體供給到前述投影光學系統的內部的光學元件間的空間,前述混合氣體是將折射率互不相同的多種氣體以預先設定的混合率即設定混合比進行混合而得的;以及控制部,其藉由控制前述設定混合比來對前述投影光學系統的成像特性進行校正並對前述基板進行曝光,前述控制部獲取如下響應特性,該響應特性表示前述供給部以固定的混合比來供給混合氣體時的前述成像特性的演變(變化),前述控制部在將前述設定混合比設定為目標混合比並對前述基板進行曝光時,在前述成像特性轉變為穩定狀態之前的過渡期間中,前述控制部將前述設定混合比設定為依據前述響應特性來對前述目標混合比進行校正而得的值並對前述基板進行曝光。According to a first aspect of the present invention, there is provided an exposure apparatus for exposing a substrate, wherein the exposure apparatus includes: a projection optical system for projecting a pattern of a mask onto the substrate; and a supply unit for supplying a mixed gas to the substrate. In the space between the optical elements inside the projection optical system, the mixed gas is obtained by mixing a plurality of gases with different refractive indices at a preset mixing ratio, that is, a set mixing ratio; The mixing ratio is set to correct the imaging characteristics of the projection optical system and to expose the substrate, and the control unit acquires a response characteristic representing the imaging characteristics when the supply unit supplies the mixed gas at a fixed mixing ratio. evolution (change), when the control section sets the set mixture ratio as the target mixture ratio and exposes the substrate, the control section sets the set mixture ratio to A value obtained by correcting the target mixture ratio based on the response characteristic is set, and the substrate is exposed.
根據本發明的第二方面,提供物品製造方法,其特徵在於,包括:使用上述第一方面所關於的曝光裝置來對基板進行曝光的製程;以及對被曝光了的前述基板進行顯影的製程,其中,從被顯影了的前述基板來製造物品。 發明的效果According to a second aspect of the present invention, there is provided a method of manufacturing an article, which is characterized by comprising: a process of exposing a substrate by using the exposure device related to the above-mentioned first aspect; and a process of developing the exposed substrate, Herein, an article is manufactured from the aforementioned substrate that has been developed. The effect of the invention
根據本發明,能夠提供例如有利於兼顧投影光學系統的光學性能的校正性能與生產率這兩者的曝光裝置。According to the present invention, for example, it is possible to provide an exposure apparatus that is advantageous in both correction performance and productivity of optical performance of a projection optical system.
以下,參照附圖對實施方式詳細地進行說明。另外,以下的本實施方式並非對權利要求關於的發明進行限定。在本實施方式中記載了多個特徵,但所有這些特徵對發明而言並非都是必需的,此外,多個特徵也可以任意地組合。另外,在附圖中,對同一或者相同的結構賦予同一附圖標記,並省略重複說明。Embodiments will be described in detail below with reference to the drawings. In addition, the present embodiment below does not limit the invention related to the claims. Although some features were described in this embodiment, not all of these features are essential to the invention, and multiple features may be combined arbitrarily. In addition, in the drawings, the same reference numerals are assigned to the same or similar configurations, and repeated descriptions are omitted.
圖1是示出本實施方式中的曝光裝置1的結構的圖。在一個例子中,曝光裝置1是以步進重複(step and repeat)方式來將光罩3的圖案曝光到基板10的曝光裝置。但是,本發明也可以應用於步進掃描(step and scan)方式以及其他曝光裝置。FIG. 1 is a diagram showing the configuration of an
照明系統2調整來自波長約365nm的汞燈、波長約248nm的KrF準分子雷射器、波長約193nm的ArF準分子雷射器等未圖示的光源的光,並對光罩3照明。光罩3例如由石英玻璃構成,形成有要轉印到基板10上的圖案(例如電路圖案)。光罩載台4能夠保持光罩3,利用例如直線馬達來調整光罩3的位置及姿態中的至少一者。光罩載台4的驅動被控制部25控制。The
投影光學系統5將光罩3的圖案以規定的倍率(例如1/4倍)投影到基板10上。基板10是例如由玻璃板(glass plate)、矽晶圓(Silicon wafer)等形成的基板。在基板10的表面塗布有感光劑11。投影光學系統5包括多個光學元件6(例如透鏡(lens)、反射鏡(mirror)、開口光圈等光學要素)。多個光學元件6中的部分光學元件的位置、姿態、形狀及溫度中的至少一者能夠被調整部7調整。The projection
基板載台9能夠保持基板10,利用例如直線馬達來調整基板10的位置及姿態中的至少一者。基板載台9的驅動被控制部25控制。雷射干涉儀14配置在基板載台9的附近,藉由將雷射光照射向在基板載台9配置的條形鏡(bar mirror)12來測量基板載台9的位置。The
曝光裝置1具有供給部30,該供給部30將折射率互不相同的多種氣體混合而得的混合氣體供給到投影光學系統5的內部的光學元件間的空間。在供給部30中,氣體供給部15、16將折射率互不相同的多種氣體供給到混合器19。多種氣體可以是例如從氦氣、氮氣、氧氣、二氧化碳、乾燥空氣等中選擇的多種氣體。供氣量調整器17、18分別調整來自氣體供給部15、16的氣體的供給量。混合器19將從氣體供給部15、16供給的至少兩種不同的氣體混合,將混合氣體經由供氣配管21供給到投影光學系統5。濃度測量器20測定混合氣體中各氣體的濃度。利用這樣的供給部30,能夠供給以預先設定的混合率即設定混合比來混合而得的混合氣體。The
供給到投影光學系統5的混合氣體經由在支承光學元件6的調整部7設置的通氣孔8來擴散到光學元件間的空間。通氣孔8也可以是不處於調整部7,而是處於固定地支承光學元件6的未圖示的部件。排氣部22將氣體從投影光學系統5經由排氣配管24排出。在排氣配管24設置有對要從排氣部22排出的排氣量進行調節的排氣量調整部23。控制部25依據由氣壓計26測量出的氣壓值,控制排氣量調整部23來調整排氣量,消除投影光學系統5內外的氣壓差。The mixed gas supplied to the projection
檢測器13檢測從投影光學系統5透過的光。檢測器13能包括例如干涉儀和光強度感測器中的至少任一者。控制部25能夠依據檢測器13的檢測結果,測量在投影光學系統5的曝光區域內的各點處的波前像差。此外,控制部25還能夠依據檢測器13的檢測結果,測量投影光學系統5的畸變像差。在此,畸變像差例如是表示像平面上的實際的像高與理想像高偏差了多少量,能夠在像平面上(曝光區域內)的各點處測定出畸變像差。另外,檢測器13可以應用公知的任意結構,因此在此省略了對詳細的構造及操作的說明。The
調整部7調整成像特性,在此,例如調整投影光學系統5的多個光學元件6中的部分光學元件的位置、姿態、形狀及溫度中的至少一者。調整部7例如包括在光軸方向(圖1所示的Z方向)以及與光軸方向垂直的方向進行驅動的機構、對支承光學元件的支承部進行驅動的機構、對光學元件施加應力(按壓或者牽引光學元件的力)的機構、將光學元件加熱或冷卻的機構等。調整部7中的這些驅動被控制部25控制。不過,只要調整部是藉由進行對投影光學系統5的光學元件6的驅動、對光罩載台4的驅動、對基板載台9的驅動中的至少一者來調整成像特性的即可。The
控制部25綜合地控制曝光裝置1的各部分的動作。控制部25可由包括CPU和記憶體的電腦構成。在本實施方式中,控制部25特別是作為藉由對設定於供給部30的設定混合比進行控制來校正投影光學系統5的成像特性並對基板進行曝光的控制部來發揮功能。此外,控制部25依據檢測器13的檢測結果,計算調整部7對光學元件6的調整量以及基板載台9的調整量,依據計算出的對光學元件6的調整量以及基板載台9的調整量,控制調整部7以及基板載台9。The
以下,對本實施方式中的投影光學系統5的光學性能(成像特性)的曝光處理進行說明。表示成像特性的指標包括多個像差分量。例如,成像特性可以包括球面像差、倍率像差、畸變像差、像場彎曲(Field curvature)、像散、彗形像差中的至少一者。在此為了示出具體例子,將作為多個像差分量中的第一像差分量的球面像差作為校正對象。此外,作為第一像差分量之外的其他像差分量,設想產生了倍率像差和畸變像差。Hereinafter, the exposure process of the optical performance (imaging characteristic) of the projection
在本實施方式中的校正處理中,控制部25事先獲取如下響應特性,該響應特性表示在由供給部30以固定的混合比來供給混合氣體時的成像特性的演變。控制部25在將設定混合比設定為目標混合比來對基板進行曝光時,在成像特性轉變為穩定狀態之前的過渡期間中,控制部25將設定混合比設定為依據響應特性對目標混合比進行了校正的值並對基板進行曝光。圖2是示出這樣的曝光處理的具體例子的流程圖。在S101中,控制部25獲取如下響應特性,該響應特性表示在由供給部30以固定的混合比來供給混合氣體時的成像特性的演變。在此,這樣的響應特性的資料是藉由預先測量或者模擬而獲得的,並被儲存於控制部25的記憶體。In the correction processing in the present embodiment, the
在本實施方式中,響應特性能包括分別與球面像差、倍率像差及畸變像差相關的響應特性。圖3示出了這些響應特性的例子。在此所說的響應特性表示在由供給部30以固定的混合比來供給混合氣體時的像差的演變(像差相對於置換時間而言的變化)。(a)是球面像差的響應特性的例子,(b)是倍率像差的響應特性的例子,(c)是畸變像差的響應特性的例子。即使向投影光學系統內供給淨化氣體,也無法立即對空間整體進行置換,而呈現出這樣的響應特性。例如如(a)所示,球面像差在成為穩定狀態之前會有非穩定狀態的期間(過渡期間)。這些獲取到的各響應特性的資料被儲存於控制部25的未圖示的記憶體。In this embodiment, the response characteristics may include response characteristics respectively related to spherical aberration, lateral aberration, and distortion aberration. Figure 3 shows examples of these response characteristics. The response characteristic referred to here means the evolution of aberration (the change of aberration with respect to the replacement time) when the mixed gas is supplied from the
在S102中,控制部25測量因曝光產生的像差量的變化。例如伴隨著曝光,投影光學系統5吸收曝光能量因而成像特性會發生變動(曝光像差)。於是,控制部25將檢測器13的檢測結果應用於規定的預測式來預測成像特性(在此為球面像差)的變動,由此能夠確定校正量。或者也可以是,控制部25依據檢測器13的檢測結果,測量像差相對於在各照明條件下產生的曝光熱而言的變化。此外,控制部25利用氣壓計26測量設置有投影光學系統5的空間的大氣壓。In S102, the
在S103中,控制部25求出用於對在S102中求出的像差變化量進行補償的折射率,確定與該折射率對應的目標混合比。折射率與目標混合比的對應關係是預先用數學式或者表格規定的。此外也可以是,控制部25依據在S102中測量出的大氣壓的值,計算因大氣壓的變化的影響而產生的球面像差的量,並將其加入到校正量。作為確定因大氣壓的變化而產生的球面像差的量的方法,例如有藉由氣壓靈敏度係數與氣壓變化量的積來求出的方法,其中氣壓靈敏度係數與氣壓變化量的積是測量球面像差相對於氣壓變化而言的變化量而計算出的。In S103, the
例如如下那樣確定混合比。球面像差相對於混合氣體的混合比的變化(即折射率的變化)而言的變化量為圖4所示的比例關係。依據該關係,能夠藉由光學模擬來計算球面像差量相對於投影光學系統的透鏡空間的折射率而言的比例常數。此外也可以是,控制部25依據在S102中測量出的像差的變化,預測在曝光所使用的照明條件下因曝光熱而產生的投影光學系統5的球面像差的產生量,並將其加入到校正量。For example, the mixing ratio is determined as follows. The amount of change in the spherical aberration with respect to the change in the mixing ratio of the mixed gas (that is, the change in the refractive index) is proportional to that shown in FIG. 4 . Based on this relationship, the proportionality constant of the amount of spherical aberration with respect to the refractive index of the lens space of the projection optical system can be calculated by optical simulation. In addition, the
以下的處理是在將設定混合比設定為在此確定的目標混合比來對基板進行曝光時的處理。The following processing is processing when exposing the substrate by setting the set mixing ratio to the target mixing ratio determined here.
在S104中,控制部25確定作為其他像差分量的倍率像差和畸變像差各自在混合氣體置換中的容許範圍(可校正範圍)。也可以是,關於這樣的可校正範圍,預先在曝光配方中規定。In S104 , the
在S105中,控制部25對於投影光學系統5開始進行氣體的供氣排氣控制。具體而言,控制部25按照在S103中確定的目標混合比,對供氣量調整器17、18進行調整,調整流入混合器19的氣體的流量。由混合器19混合了的氣體一邊以不會產生投影光學系統5內外的壓力差的方式被排氣量調整部23調整排氣量,一邊被供給到投影光學系統5。由此,校正球面像差。In S105 , the
在S106中,控制部25借助未圖示的搬運機構來搬入(裝載)曝光對象的基板。所裝載的基板被基板載台9保持。In S106, the
在S107中,控制部25判定當前的時間點是否處於成像特性(在此為球面像差)轉變為穩定狀態之前的過渡期間中。在處於過渡期間中的情況下,在S108中,控制部25將設定混合比設定為依據響應特性來對目標混合比進行校正而得的值。具體而言,根據在S101中得到的球面像差的響應特性(圖3的(a))計算與當前時刻對應的像差量,用與該像差量對應的校正量來對目標混合比進行校正。像這樣,在本實施方式中,對混合氣體的目標混合比進行主動校正。In S107 , the
但是,在對混合比進行了這樣的主動校正的情況下,也可能新產生了其他像差分量,因此可能也需要對其進行校正。由調整部7在不超過其可校正範圍內對其他像差分量進行校正。於是,在S109中,控制部25判定其他像差分量是否在S104中確定的容許範圍(可校正範圍)內。在其他像差分量處於容許範圍內的情況下,在S110中,控制部25控制調整部7來校正其他像差分量。在其他像差分量之變化超過調整部7的可校正範圍的情況下,停止曝光(S111),直至調整部7能夠進行校正為止。此時也可以是,繼續供給混合氣體直至成為可校正範圍為止,在此期間停止曝光裝置1的曝光。在當前的時間點為過渡期間經過後、即穩定狀態的期間的情況下(在S107中為“否”),則在S112中,控制部25將設定混合比設定為在S103中確定的目標混合比。However, in the case where such an active correction of the mixture ratio is performed, other aberration components may be newly generated, and thus may need to be corrected as well. The other aberration components are corrected by the
之後,在S113中,控制部25實施對基板的曝光。在曝光完成後,在S114中,控制部25控制搬運機構搬出基板(卸載)。在S115中,控制部25判斷是否之後還有要處理的基板。在之後還有基板的情況下,返回到S102並重複處理。在預定的全部基板的處理完成的情況下,本處理結束。Thereafter, in S113, the
在上述的例子中,說明了為了校正球面像差而供給混合氣體,但校正對象也可以是倍率像差、畸變像差、像場彎曲、像散、彗形像差等。此外,在上述的例子中,由調整部7校正的其他像差分量設為倍率像差以及畸變像差,但也可以是球面像差、像場彎曲、彗形像差等。In the above-mentioned example, it was described that the mixed gas is supplied for correcting spherical aberration, but the correction target may be lateral aberration, distortion aberration, curvature of field, astigmatism, coma aberration, and the like. In addition, in the above example, the other aberration components to be corrected by the
根據以上的處理,只要其他像差分量(倍率像差以及畸變像差)不超過調整部7的可校正範圍,就能夠不停止曝光處理而獲得期望的球面像差。由此,能夠兼顧投影光學系統的光學性能的校正性能與生產率。According to the above processing, as long as the other aberration components (magnification aberration and distortion aberration) do not exceed the correctable range of the
<物品製造方法的實施方式> 本發明的實施方式所關於的物品製造方法適於製造例如半導體器件等微型器件、具有精密構造的元件等物品。本實施方式的物品製造方法包括對在基板上塗布的感光劑使用上述曝光裝置形成潛像圖案的製程(對基板進行曝光的製程);以及對在上述製程中形成了潛像圖案的基板進行顯影的製程。此外,該製造方法包括其他公知的製程(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕劑剝離、切割、接合、封裝等)。與以往的方法相比,本實施方式的物品製造方法在物品的性能、品質、產能、生產成本中的至少一個方面有利。<Embodiments of the article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a precise structure. The article manufacturing method of this embodiment includes a process of forming a latent image pattern on a photosensitive agent coated on a substrate using the above-mentioned exposure device (process of exposing the substrate); and developing the substrate on which the latent image pattern is formed in the above-mentioned process. process. In addition, the manufacturing method includes other known processes (oxidation, film formation, evaporation, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). Compared with conventional methods, the article manufacturing method of this embodiment is advantageous in at least one of article performance, quality, productivity, and production cost.
發明不限於上述實施方式,在不脫離發明的精神及範圍的情況下,能夠進行各種變更及變形。因此,為了公開發明的範圍而附加權利要求。The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are appended in order to disclose the scope of the invention.
1:曝光裝置 2:照明系統 3:光罩 5:投影光學系統 9:基板載台 10:基板 25:控制部 30:供給部1: Exposure device 2: Lighting system 3: mask 5: Projection optical system 9: Substrate carrier 10: Substrate 25: Control Department 30: Supply Department
[圖1]是示出實施方式中的曝光裝置的結構的圖。 [圖2]是示出實施方式中的與投影光學系統的光學性能的校正相伴隨的曝光處理的流程圖。 [圖3]是示出混合氣體置換中的像差的響應特性的例子的圖。 [圖4]是示出球面像差的變化量相對於混合氣體的混合比的變化而言所存在的比例關係的圖。[ Fig. 1 ] is a diagram illustrating a configuration of an exposure apparatus in an embodiment. [ Fig. 2 ] is a flowchart showing exposure processing accompanying correction of the optical performance of the projection optical system in the embodiment. [ Fig. 3 ] is a graph showing an example of response characteristics of aberrations in gas mixture replacement. [ Fig. 4 ] is a graph showing a proportional relationship between the amount of change in spherical aberration and the change in the mixing ratio of the mixed gas.
1:曝光裝置 1: Exposure device
2:照明系統 2: Lighting system
3:光罩 3: mask
4:光罩載台 4: Mask carrier
5:投影光學系統 5: Projection optical system
6:光學元件 6: Optical components
7:調整部 7: Adjustment department
8:通氣孔 8: Air vent
9:基板載台 9: Substrate carrier
10:基板 10: Substrate
11:感光劑 11: Sensitizer
12:條形鏡 12: Bar mirror
13:檢測器 13: Detector
14:雷射干涉儀 14:Laser interferometer
15,16:氣體供給部 15,16: Gas supply part
17,18:供氣量調整器 17,18: Air supply regulator
19:混合器 19: Mixer
20:濃度測量器 20: concentration measuring device
21:供氣配管 21: Air supply piping
22:排氣部 22: exhaust part
23:排氣量調整部 23: Displacement adjustment part
24:排氣配管 24: Exhaust piping
25:控制部 25: Control Department
26:氣壓計 26: Barometer
30:供給部 30: Supply Department
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JPH05144700A (en) * | 1991-11-22 | 1993-06-11 | Canon Inc | Projection aligner and manufacture of semiconductor device using the same |
JPH05210049A (en) * | 1992-01-31 | 1993-08-20 | Matsushita Electric Ind Co Ltd | Method and device for correcting magnification of projecting lens |
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