JP2007042749A - Light emitting device, indicating device and lighting device using the light emitting device, and method of manufacturing the light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device which can reduce the unevenness of a luminescent color, an indicating device, and a lighting device using the the light emitting device, and a method of manufacturing the light emitting device. <P>SOLUTION: The light emitting device 1 is provided with a substrate 10, a light emitting element 13 mounted to the substrate 10, and a fluorescent layer 14 covering the light emitting element 13. The fluorescent layer 14 has an upper surface 15 opposite to the substrate 10 and a side surface 16 rising from the substrate 10, and the periphery end of the upper surface 15 is provided with a step 17. The step 17 is preferably formed like stairs having at least one or more steps. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a light emitting device using a light emitting element including a phosphor layer, a display device and an illumination device using the light emitting device, and a method for manufacturing the light emitting device.

  A light-emitting diode (LED) is known as a light-emitting element including a semiconductor multilayer film. Among these, LEDs emitting blue light, such as GaN-based LEDs, can be applied to a light emitting device that emits white light by combining with a phosphor that emits yellow light when excited by blue light (for example, Patent Document 1). reference).

FIG. 16 is a cross-sectional view of a conventional light emitting device. As shown in FIG. 16, the light emitting device 100 is formed by covering a substrate 101, a conductor pattern 102 formed on the substrate 101, an LED chip 103 flip-chip mounted on the conductor pattern 102, and the LED chip 103. Phosphor layer 104 formed. The LED chip 103 includes a sapphire substrate 110, an n-type semiconductor layer 111, a light emitting layer 112, and a p-type semiconductor layer 113 that are sequentially stacked on the sapphire substrate 110. The light emitting layer 112 is not in contact with a part 111a of the main surface of the n-type semiconductor layer 111 on the substrate 101 side, and an n-side electrode 114a is provided. The n-type semiconductor layer 111 is electrically connected to the conductor pattern 102 via the n-side electrode 114a and the gold bump 115. The p-type semiconductor layer 113 is electrically connected to the conductor pattern 102 via the p-side electrode 114 b and the gold bump 115.
JP 2001-15817 A

  When the light emitting device 100 having the above-described configuration is caused to emit light, light emitted from the outer peripheral end portion 104a of the phosphor layer 104 is extracted as yellow light without becoming white light. This is because the optical path length of the blue light (light in the oblique direction) passing through the outer peripheral end portion 104a of the phosphor layer 104 is longer than the optical path length of the blue light passing through the upper surface portion 104b and the side surface portion 104c of the phosphor layer 104. Therefore, the phosphor is easily excited by the blue light, and as a result, the yellow light component emitted from this region increases. Therefore, in the light emitting device 100, color unevenness occurs in the emitted color, which may make it difficult to apply to a lighting device or a display device.

  The present invention solves the above-described conventional problems, and provides a light-emitting device capable of reducing color unevenness of emitted light, a display device and an illumination device using the light-emitting device, and a method for manufacturing the light-emitting device.

  The light emitting device of the present invention is a light emitting device including a substrate, a light emitting element mounted on the substrate, and a phosphor layer covering the light emitting element, wherein the phosphor layer is an upper surface portion facing the substrate. And a side surface portion rising from the substrate, and an outer peripheral end portion of the upper surface portion has a step portion.

  In addition, the display device and the illumination device of the present invention each include the light emitting device of the present invention.

The method for manufacturing a light-emitting device according to the present invention includes a first step of mounting a light-emitting element on a substrate, and applying a paste containing a phosphor so as to cover the light-emitting element, and an upper surface facing the substrate. And a second step of forming a phosphor layer having a side portion rising from the substrate, and a third step of forming a step portion at the outer peripheral end of the upper surface portion. .

  According to the light emitting device of the present invention, the stepped portion is provided at the outer peripheral end portion of the upper surface portion of the phosphor layer, so that the emission color of light emitted from the outer peripheral end portion can be emitted from other portions of the phosphor layer. It can be matched to the light emission color. As a result, color unevenness of the emission color can be reduced. In addition, according to the display device and the illumination device of the present invention, since the light-emitting device of the present invention is included, it is possible to provide a display device and an illumination device in which the color unevenness of the emission color is reduced. Moreover, according to the manufacturing method of the light-emitting device of this invention, the said light-emitting device of this invention can be manufactured reasonably.

  The light emitting device of the present invention includes a substrate, a light emitting element mounted on the substrate, and a phosphor layer covering the light emitting element. The phosphor layer includes an upper surface portion facing the substrate and a side surface portion rising from the substrate, and an outer peripheral end portion of the upper surface portion has a stepped portion.

  By providing a step portion at the outer peripheral end of the upper surface portion of the phosphor layer, in the light emitted from the light emitting element, the optical path length of light emission passing through the outer peripheral end of the phosphor layer and the other part of the phosphor layer Therefore, the emission color of light emitted from the outer peripheral edge of the phosphor layer can be matched with the emission color of light emitted from other parts of the phosphor layer. As a result, color unevenness of the emission color can be reduced. In addition, the said level | step-difference part should just be formed in at least one part of the outer peripheral edge part of an upper surface part.

  Moreover, it is preferable that the said level | step-difference part is formed in the step shape of at least 1 step | paragraph or more. This is because the optical path length can be controlled more precisely.

  It is preferable that the outer shape of the phosphor layer is a shape that is aligned with the outer shape of the light emitting element. This is because the distance between the outer surface of the light-emitting element and the outer surface of the phosphor layer can be made constant to reduce color unevenness of the emitted color.

  The upper surface portion of the phosphor layer is preferably formed in parallel to the substrate. This is because the optical path length of light emission in the direction perpendicular to the substrate can be made constant, so that the color unevenness of the light emission color on the upper surface portion of the phosphor layer can be reduced.

  The side part of the phosphor layer is preferably formed perpendicular to the substrate. This is because the optical path length of light emission in the direction parallel to the substrate can be made constant, and color unevenness of the light emission color at the side surface portion of the phosphor layer can be reduced.

  The display device of the present invention includes the light emitting device of the present invention. Thereby, it is possible to provide a display device in which color unevenness of emission color is reduced.

  Moreover, the illuminating device of this invention contains the light-emitting device of the said invention. Thereby, the illuminating device in which the color unevenness of the emission color is reduced can be provided.

  The method for manufacturing a light emitting device according to the present invention includes a first step of mounting a light emitting element on a substrate, a paste containing a phosphor so as to cover the light emitting element, and an upper surface portion facing the substrate. And a second step of forming a phosphor layer having a side portion rising from the substrate, and a third step of forming a stepped portion at the outer peripheral end of the upper surface portion.

Thereby, the light emitting device of the present invention can be reasonably manufactured. For the reasons described above, it is preferable that the step portion is formed in a stepped shape having at least one step in the third step, and the upper surface portion is formed in parallel to the substrate in the second step. Preferably, in the second step, the side surface portion is preferably formed perpendicular to the substrate.

  Next, embodiments of the present invention will be described with reference to the drawings.

<Embodiment of Light Emitting Device>
First, an embodiment of a light emitting device of the present invention will be described. FIG. 1 is a cross-sectional view showing an example of a light emitting device of the present invention. In FIG. 1, a light emitting device 1 includes a substrate 10, a conductor pattern 11 formed on the substrate 10, a light emitting element 13 flip-chip mounted on the conductor pattern 11 via bumps 12, and a light emitting element 13. And a phosphor layer 14 covering the. The phosphor layer 14 includes an upper surface portion 15 that faces the substrate 10 and a side surface portion 16 that rises from the substrate 10, and a stepped portion 17 is provided at the outer peripheral end of the upper surface portion 15. The step portion 17 of the present embodiment is formed in a stepped shape with one step. Further, the upper surface portion 15 is formed parallel to the substrate 10, and the side surface portion 16 is formed perpendicular to the substrate 10. By providing the stepped portion 17 at the outer peripheral end portion of the upper surface portion 15 of the phosphor layer 14, the optical path length of light emission that passes through the outer peripheral end portion of the phosphor layer 14 and light emission that passes through other portions of the phosphor layer 14. The optical path length can be made almost equal.

The substrate constituting the substrate 10 is not particularly limited laminating, for example, or a ceramic substrate made of Al ₂ O _3, AlN or the like, a semiconductor substrate made of Si or the like, or on the metal layer an electrically insulating material layer The laminated base material etc. which were made to use can be used. As the electrical insulating material layer, for example, a composite material containing 70 to 95% by mass of an inorganic filler and 5 to 30% by mass of a thermosetting resin composition can be used. In addition, the thickness of the base material which comprises the said board | substrate 10 should just be 0.1-1 mm, for example.

  As said light emitting element 13, what has the diode structure which comprises blue LED can be used, for example. Specifically, an LED chip including a semiconductor multilayer film in which a first conductivity type layer, a light emitting layer, and a second conductivity type layer are laminated in this order can be suitably used. Here, the “first conductivity type” is a p-type or n-type conductivity type, and the “second conductivity type” is a conductivity type opposite to the first conductivity type. For example, when the first conductivity type layer is a p-type semiconductor layer, the second conductivity type layer is an n-type semiconductor layer. As the first conductivity type layer, for example, a p-GaN layer that is a p-type semiconductor layer, an n-GaN layer that is an n-type semiconductor layer, or the like can be used. As the second conductivity type layer, similarly to the first conductivity type layer, for example, a p-GaN layer that is a p-type semiconductor layer, an n-GaN layer that is an n-type semiconductor layer, or the like can be used. As a material for the light emitting layer, a material capable of emitting light of 450 to 470 nm is preferable. Specific examples of the light emitting layer include, for example, an InGaN / GaN quantum well light emitting layer. Note that a material capable of emitting light of 410 nm or less may be used as a material of the light emitting layer. The thicknesses of the p-type semiconductor layer, the light emitting layer, and the n-type semiconductor layer may be, for example, 0.1 to 0.5 μm, 0.01 to 0.1 μm, and 0.5 to 3 μm, respectively. The light-emitting element 13 may include a single crystal substrate (thickness: for example, about 0.01 to 0.5 mm) such as a sapphire substrate used for crystal growth of the semiconductor multilayer film.

As the phosphor layer 14, for example, a transparent resin such as a silicone resin or an epoxy resin in which a phosphor and an inorganic filler are dispersed can be used. Examples of the phosphor include phosphors emitting green light, such as garnet structure system Y ₃ (Al, Ga) ₅ O ₁₂ : Ce ³⁺ , silicate system (Ba, Sr) ₂ SiO ₄ : Eu ²⁺ , Sialon type Ca—Al—Si—O—N: Eu ²⁺ , silicate type (Sr, Ca) ₂ SiO ₄ : Eu ²⁺ , garnet structure type (Y, Gd) ₃ Al ₅ O ₁₂ : Ce ³⁺ Phosphors emitting yellow light, nitridosilicate Sr ₂ Si ₅ N ₈ : Eu ²⁺ , nitridoaluminosilicate CaAlSiN ₃ : Eu ²⁺ , oxonitridoaluminosilicate Sr ₂ Si ₄ AlON ₇ : Eu ^{2 +} , Phosphors emitting red light such as sulfide-based CaS: Eu ²⁺ can be used. In particular, when a phosphor that emits yellow light is included, a light-emitting device capable of obtaining white light suitable as an illumination device can be provided. As the inorganic filler, SiO ₂ , Al ₂ O ₃ or the like can be used.

  The bump 12 can be formed of gold or the like, and the conductor pattern 11 can be formed of aluminum or gold, but is not limited to these materials.

  FIG. 2 is a cross-sectional view showing another example of the light emitting device of the present invention. The light emitting device 1 in FIG. 2 is the same as the light emitting device in FIG. 1 except that the stepped portion 17 is formed in a three-step shape. In FIG. 2, the same parts as those in FIG.

  FIG. 3 is a cross-sectional view showing another example of the light emitting device of the present invention. In the light emitting device 1 of FIG. 3, the stepped portion 17 is formed in a two-step shape, and directly connects the lower part of the light emitting element 13 and the conductor pattern 11 a of the substrate 10. Except that the conductor pattern 11b is connected by using one wire 18, it is the same as the light emitting device of FIG. In FIG. 3, the same parts as those in FIG.

  FIG. 4 is a cross-sectional view showing another example of the light emitting device of the present invention. The light emitting device 1 of FIG. 4 directly connects the lower part of the light emitting element 13 and the conductor pattern 11 a of the substrate 10, and uses two wires 18 to connect the upper electrode of the light emitting element 13 and the conductor pattern 11 b of the substrate 10. Except for connection, it is the same as the light emitting device of FIG. 4, the same parts as those in FIG. 3 are denoted by the same reference numerals, and the description thereof is omitted.

  FIG. 5 is a perspective view showing an example of the light-emitting device of the present invention. The light emitting device 1 in FIG. 5 is substantially the same as the light emitting device in FIG. 1 except that the area of the main surface of the substrate 10 and the area of the lower surface of the phosphor layer 14 are the same. In FIG. 5, the same parts as those in FIG.

  FIG. 6 is a perspective view showing another example of the light emitting device of the present invention. The light emitting device 1 in FIG. 6 is a case where the shape of the light emitting element (not shown) is a hexagonal shape, and the shape of the substrate 10 and the shape of the phosphor layer 14 are changed to a hexagonal shape accordingly. 5 is substantially the same as the light emitting device 5. In FIG. 6, the same parts as those in FIG.

  FIG. 7 is a partial cross-sectional view showing another embodiment of the stepped portion 17. The form shown in FIG. 7A is an example in which the side surface portion of the stepped portion 17 is inclined, the form shown in FIG. 7B is an example in which the stepped portion 17 is formed in an acute angle shape, and FIG. This is an example in which a large number of fine particles are formed to form a curved surface.

<Embodiment of Method for Manufacturing Light-Emitting Device>
Next, an embodiment of the manufacturing method of the present invention will be described. 8 and 9 are process cross-sectional views illustrating an example of a method for manufacturing a light-emitting device according to the present invention. 8 and 9, the same parts as those in FIGS. 1 to 7 are denoted by the same reference numerals, and the description thereof is omitted.

First, as shown in FIG. 8A, bumps 12 are formed on the conductor pattern 11 formed on the substrate 10. Next, as shown in FIG. 8B, the light emitting element 13 is disposed on the conductor pattern 11 of the substrate 10 through the bumps 12, and is flip-chip mounted by heating and ultrasonic bonding. Next, as illustrated in FIG. 8C, the screen plate 20 is disposed so as to surround the light emitting element 13 on the substrate 10. Next, as shown in FIG. 8D, a paste 22 containing a phosphor is applied by a screen printing method so as to cover the light emitting element 13 using a printing squeegee 21. Next, after removing the screen plate 20, the paste 22 is cured by heating or the like, and the upper surface portion 15 of the phosphor layer 14 is polished using a grinder blade 23 as shown in FIG. Adjust the height. Note that the polishing step shown in FIG. 8E can be omitted. Through the above steps, a cubic phosphor layer 14 having an upper surface portion 15 facing the substrate 10 and a side surface portion 16 rising from the substrate 10 is formed on the substrate 10.

  Subsequently, as shown in FIGS. 9A and 9B, the outer peripheral end portion of the upper surface portion 15 of the phosphor layer 14 is cut stepwise using a dicing blade 24. As a result, as shown in FIG. 9C, the phosphor layer 14 having the stepped portion 17 at the outer peripheral end of the upper surface portion 15 is obtained. Furthermore, as shown in FIG. 9D, the end portion of the substrate 10 and the side surface portion 16 of the phosphor layer 14 can be polished with a dicing blade 24 as necessary. Thereby, as shown in FIG. 8E, the light emitting element 1 in which the side surface portion 16 of the phosphor layer 14 is flush with the end portion of the substrate 10 can be formed.

  As the paste 22, for example, a liquid in which the above-described phosphor is dispersed in a liquid resin made of a silicone resin, an epoxy resin, or the like can be used. The viscosity is usually about 50 to 5000 Pa · s, preferably about 100 to 2000 Pa · s.

  In the present embodiment, the screen printing method is adopted as a method for applying the paste 22, but the present invention is not particularly limited to this, and an ink jet printing method can also be used. In the present embodiment, an example in which one phosphor layer 14 including the light emitting element 13 is formed on the substrate 10 has been shown. However, a plurality of phosphor layers 14 are formed on the substrate 10 and then dicing is performed. It can also be separated into pieces.

<Embodiment of light emitting module>
Next, an embodiment of a light emitting module using the light emitting device 1 according to the above-described embodiment will be described. FIG. 10 is a cross-sectional view showing an example of the light emitting module.

  As shown in FIG. 10, the light emitting module 3 includes a mounting substrate 30, a conductor pattern 31 formed on the mounting substrate 30, and a plurality of light emitting devices 1 (on the conductor pattern 31 mounted via gold wires 32 ( In FIG. 10, only one is shown), a reflection plate 33 provided on the mounting substrate 30, and a sealing resin layer 34 for sealing the light emitting device 1 filled in the hole 33a of the reflection plate 33. And a lens 35 formed on the sealing resin layer 34. With the lens 35, the light distribution angle can be narrowed to improve the light collecting property. The mounting substrate 30 includes a metal layer 30a made of aluminum or the like, and an electrical insulating layer 30b stacked on the metal layer 30a. As the electrical insulating layer 30b, for example, a composite material containing 70 to 95% by mass of an inorganic filler and 5 to 30% by mass of a thermosetting resin composition can be used.

  Since the light emitting module 3 configured as described above includes the light emitting device 1 of the present invention, even if the light distribution angle is narrowed by the lens 35, color unevenness of the emitted color can be suppressed. In the light emitting module 3, the sealing resin layer 34 and the lens 35 can be made of, for example, transparent resin such as silicone resin or epoxy resin, glass, or the like. Further, as the constituent material of the reflecting plate 33, a metal having a high reflectance such as aluminum, a ceramic material having a high reflectance such as alumina, a white resin having a high reflectance such as a liquid crystal polymer, or the like can be used.

<Embodiment of Display Device>
Next, an embodiment of the display device of the present invention will be described. FIG. 11 is a perspective view showing an image display device which is an example of the display device of the present invention.

As shown in FIG. 11, the image display device 4 of the present embodiment includes a panel 40, and a plurality of the light emitting modules 3 described above are arranged as a light source in a matrix on one main surface 40 a of the panel 40. Has been. The image display device 4 configured in this way is the light emitting device 1 (
Since the light emitting module 3 including FIG. 10 is used as the light source, the color unevenness of the emission color can be suppressed.

<Embodiment of Lighting Device>
Next, an embodiment of the illumination device of the present invention will be described. FIG. 12 is a perspective view of a stand-type lighting device that is an example of the lighting device of the present invention.

  As shown in FIG. 12, the stand-type lighting device 5 of the present embodiment is fixed to the trunk portion 50, a base portion 51 that is fixed to one end of the trunk portion 50 and supports the trunk portion 50, and the other end of the trunk portion 50. The illumination unit 52 is included. A plurality of the above-described light emitting modules 3 are arranged in a matrix on the main surface 52a of the illumination unit 52 as light sources. Since the stand type lighting device 5 configured as described above uses the light emitting module 3 including the light emitting device 1 of the present invention (see FIG. 10) as a light source, it is possible to suppress uneven color of the emitted color.

  Examples of the present invention will be described below. However, the present invention is not limited to this example.

  The light emitting device of this example was manufactured by the manufacturing method described in the above embodiment of the present invention. The light emitting device of this example will be described in detail with reference to the drawings. FIG. 13 to be referred to is a detailed sectional view of the light emitting device of this example. As shown in FIG. 13, the light-emitting device 1 includes a ceramic substrate 10 having a thickness of 0.15 mm, a conductor pattern 11 formed on the substrate 10, and a light-emitting element (LED chip) mounted on the conductor pattern 11 by flip-chip mounting. ) 13 and a phosphor layer 14 including a phosphor formed to cover the LED chip 13. A stepped portion 17 having two steps is formed on the outer peripheral end of the upper surface portion 15 of the phosphor layer 14. The upper surface portion 15 is formed parallel to the substrate 10, and the side surface portion 16 of the phosphor layer 14 is formed perpendicular to the substrate 10.

  The LED chip 13 includes a 0.32 mm square sapphire substrate 13a, an n-type semiconductor layer 13b composed of an n-GaN layer sequentially stacked on the sapphire substrate 13a, a p-type semiconductor layer composed of a light emitting layer 13c and a p-GaN layer. 13d and a blue LED having an emission peak at 460 nm. The light emitting layer 13c is not in contact with a part of the main surface of the n-type semiconductor layer 13b on the substrate 10 side, and the first electrode 19a is provided. The n-type semiconductor layer 13b is electrically connected to the conductor pattern 11 via the first electrode 19a and the gold bump 12. The p-type semiconductor layer 13d is electrically connected to the conductor pattern 11 through the second electrode 19b and the gold bump 12.

The phosphor layer 14 was formed by dispersing 70% by mass of a yellow phosphor and 1% by mass of SiO ₂ (silica) powder in 29% by mass of a silicone resin. As the yellow phosphor, (Y, Gd) ₃ Al ₅ O ₁₂ : Ce ³⁺ phosphor was used. The width W of the phosphor layer 14 was 0.55 mm, the height H was 0.22 mm, the width a of the stepped portion 17 was 0.04 mm, and the height b was 0.03 mm.

  Further, as a comparative example, a light emitting device was manufactured in the same manner as in the above example except that the stepped portion 17 was not provided at the outer peripheral end portion of the upper surface portion 15 of the phosphor layer 14.

(Evaluation of uneven color of emitted color)
About the light emitting device of the above-mentioned Example and a comparative example, the color unevenness of luminescent color was evaluated by the method shown below, respectively.

FIG. 14 is a schematic diagram showing a method for evaluating color unevenness of the luminescent color. As shown in FIG. 14, a current (30 mA) was applied to the light source 60 having a lens attached to the light emitting device of the example or the comparative example, thereby causing the light source 60 to emit light. The beam angle at this time was 20 degrees. Then, a plane passing through a location 50 cm away from the light source 60 and orthogonal to the optical axis of the light source 60 is used as a virtual irradiation surface, and a probe (not shown) is installed in the virtual irradiation surface. The spectrum of was measured. At this time, the spectrum is measured at a region 61 that is an irradiation region of light emitted from the upper surface portion of the phosphor layer, and a region that is an irradiation region of light emitted from the outer peripheral edge of the upper surface portion of the phosphor layer. Two locations of 62 were used. In addition, Otsuka Electronics Co., Ltd. MCPD3000 was used for the measurement of a spectrum.

  FIG. 15 is a graph showing a spectrum of light from the light source 60. In FIG. 15, a solid line A indicates the spectral shape of light in the region 61 (see FIG. 14) of the example and the comparative example, and the same shape is shown in the example and the comparative example. The solid line B shows the spectral shape of light in the region 62 (see FIG. 14) of the example, and the solid line C shows the spectral shape of light in the region 62 of the comparative example. In FIG. 15, in order to facilitate comparison, the intensity of light having a wavelength of 460 nm (blue light) is normalized as 1.

  As is apparent from FIG. 15, in the comparative example, the spectral shape of light in the region 61 (solid line A) and the spectral shape of light in the region 62 (solid line C) are greatly different. In the comparative example, the blue light component (light having a wavelength near 460 nm) of light emitted from the outer peripheral end of the upper surface portion of the phosphor layer is less than the yellow light component (light having a wavelength near 570 nm) of the light. Therefore, since the light is extracted as yellow light in the region 62, there is a difference in the spectral shape of the light as shown in FIG.

  On the other hand, in the embodiment, the spectral shape of light in the region 61 (solid line A) and the spectral shape of light in the region 62 (solid line B) substantially coincide. From this, it can be seen that according to the embodiment of the present invention, the color unevenness of the emission color can be reduced.

  The light-emitting device of the present invention is used for, for example, lighting devices used for general lighting, production lighting (sign lights, etc.), automotive lighting (especially headlights), large street displays, backlights, projectors, etc. This is useful for display devices and the like.

It is sectional drawing which shows an example of the light-emitting device of this invention. It is sectional drawing which shows another example of the light-emitting device of this invention. It is sectional drawing which shows another example of the light-emitting device of this invention. It is sectional drawing which shows another example of the light-emitting device of this invention. It is a perspective view which shows an example of the light-emitting device of this invention. It is a perspective view which shows another example of the light-emitting device of this invention. It is a fragmentary sectional view which shows other embodiment of the level | step-difference part of a fluorescent substance layer. It is process sectional drawing explaining an example of the manufacturing method of the light-emitting device of this invention. It is process sectional drawing explaining an example of the manufacturing method of the light-emitting device of this invention. It is sectional drawing which shows an example of the light emitting module using the light-emitting device of this invention. It is a perspective view which shows the image display apparatus which is an example of the display apparatus of this invention. It is a perspective view of the stand type illuminating device which is an example of the illuminating device of this invention. It is detailed sectional drawing of the light-emitting device of an Example. It is a schematic diagram which shows the evaluation method of the color nonuniformity of luminescent color. It is a graph which shows the spectrum of the light from a light source. It is sectional drawing of the conventional light-emitting device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light-emitting device 3 Light-emitting module 4 Image display apparatus (display apparatus)
5 Stand-type lighting device (lighting device)
10 Substrate 11 Conductor pattern 12 Bump 13 Light emitting element (LED chip)
13a Sapphire substrate 13b n-type semiconductor layer 13c light-emitting layer 13d p-type semiconductor layer 14 phosphor layer 15 upper surface portion 16 side surface portion 17 step portion 18 wire 19a first electrode 19b second electrode 20 screen plate 21 printing squeegee 22 paste 23 grinder blade 24 Dicing blade

Claims (11)

A light emitting device including a substrate, a light emitting element mounted on the substrate, and a phosphor layer covering the light emitting element;
The phosphor layer includes an upper surface part facing the substrate and a side part rising from the substrate,
The outer peripheral end portion of the upper surface portion has a step portion.   The light emitting device according to claim 1, wherein the step portion is formed in a stepped shape of at least one step.   The light-emitting device according to claim 1, wherein an outer shape of the phosphor layer is a shape corresponding to an outer shape of the light-emitting element.   The light emitting device according to claim 1, wherein the upper surface portion is formed in parallel to the substrate.   The light emitting device according to claim 1, wherein the side surface portion is formed perpendicular to the substrate.   A display device comprising the light-emitting device according to claim 1.   An illuminating device comprising the light emitting device according to claim 1. A first step of mounting a light emitting element on a substrate;
A second step of applying a paste containing a phosphor so as to cover the light emitting element and forming a phosphor layer having an upper surface portion facing the substrate and a side surface portion rising from the substrate;
A third step of forming a stepped portion at an outer peripheral end of the upper surface portion;
A method for manufacturing a light-emitting device, comprising:   The method for manufacturing a light emitting device according to claim 8, wherein in the third step, the stepped portion is formed in at least one stepped shape.   The method for manufacturing a light emitting device according to claim 8, wherein, in the second step, the upper surface portion is formed in parallel to the substrate.   The method for manufacturing a light emitting device according to claim 8, wherein in the second step, the side surface portion is formed perpendicular to the substrate.

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