JP2007042382A - Fine pattern correction method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fine pattern correction method hardly generating crack, with a strong joint between a correction part and a substrate, and with short correction work time. <P>SOLUTION: In the fine pattern correction method, laser light α, irradiated on a given position deviated from the center 32a of an objective lens 32, refracted with the objective lens 32, and directed toward a focus F is irradiated aslant from upward on a side wall face of the correction part 30 consisting of correction paste 21 coated on a rib chip defect 85. Therefore, enough heat can be given to a bottom of the correction part 30 without reinforcing a laser power. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a fine pattern correction method, and more particularly, to a fine pattern correction method in which a correction paste is applied to defects in a fine pattern formed on a substrate, and a correction portion made of the applied correction paste is irradiated with a laser beam and fired. .

  FIG. 7 is an exploded view showing the structure of the plasma display panel (PDP). In FIG. 7, the plasma display panel includes a front glass substrate 70 and a rear glass substrate 80. On the back surface of the front glass substrate 70, a plurality of composite electrodes each having a wide transparent electrode 71 and a narrow bus electrode 72 are formed at a predetermined pitch, and these are covered with a dielectric layer 73 and a protective film 74. Has been. A plurality of address electrodes 81 are formed at a predetermined pitch on the surface of the rear glass substrate 80, and these are covered with a dielectric layer 82. A plurality of ribs (partition walls) 83 are formed at a predetermined pitch on the surface of the dielectric layer 82, and each valley is covered with an R, G, or B phosphor layer 84.

  The front glass substrate 70 and the rear glass substrate 80 are fixed via ribs 83 so that the bus electrodes 72 and the address electrodes 81 are orthogonal to each other. As a result, a discharge space called a cell is formed at each intersection of the bus electrode 72 and the address electrode 81. When a voltage is selectively applied to the plurality of bus electrodes 72 and the plurality of address electrodes 81, each cell selectively discharges and emits light, and one image is displayed on the plasma display panel.

  By the way, when the rib 83 is formed on the rear glass substrate 80, a rib chip defect 85 in which a part of the rib 83 is chipped as shown in FIG. A protrusion defect 86 may occur on the upper surface of the rib 83.

  Such defects 85 and 86 cause color mixing and dark spots when the panel is turned on, and the panel quality is remarkably lowered. Therefore, it is necessary to correct the defects 85 and 86 before forming the phosphor layer 8.

As a method for correcting these defects 85 and 86, a correction paste is applied to the rib chip defect 85 using an application needle, and the upper surface of the correction portion made of the applied correction paste is irradiated with a laser beam and fired, and a protrusion is formed. There is a method of polishing and removing the defect 86 (see, for example, Patent Document 1).
JP 2000-299059 A

  However, in the conventional fine pattern correction method, although the rib 83 has a height of about 120 to 200 μm, the upper surface of the correction portion is irradiated and baked, so that the heat of the laser light is in contact with the correction portion. There is a problem in that the amount of heat that escapes to the rib 83 side and reaches the bottom of the correction portion is reduced, and the bond with the dielectric layer 82, that is, the rear glass substrate 80, is weakened.

  In order to prevent this, if the laser power to be irradiated is increased, the upper part of the correction part is excessively heated by the applied energy and melts, and when it is cured, the surrounding normal rib 83 and the lower part of the lower part are reduced. Strain is generated between the dielectric layer 82 and the like, and an internal stress is generated accordingly. These stresses are combined, and if it is large, cracks occur in the rear glass substrate 80, the dielectric layer 82, the correction portion, and the like. Further, the correction paste can be applied to the rib chip defect 85 in a plurality of layers and fired each time one layer is applied, and this can be repeated and corrected. However, the number of times of baking increases and the correction work time becomes longer. .

  Therefore, a main object of the present invention is to provide a fine pattern correction method in which the correction portion and the substrate are strongly coupled, cracks are hardly generated, and the correction operation time is short.

  The fine pattern correction method according to the present invention is a fine pattern correction method in which a correction paste is applied to a defect in a fine pattern formed on a substrate, and a correction portion made of the applied correction paste is irradiated with a laser beam and baked. Baking is performed by irradiating the side wall surface of the correction portion with laser light obliquely from above.

  Preferably, an objective lens is provided above the correction unit, the laser beam is irradiated from above on a predetermined position off the center of the objective lens, and the laser beam refracted by the objective lens toward the focal point is applied to the side wall surface of the correction unit. Irradiate.

  Preferably, the position of the objective lens is adjusted by rotationally moving the objective lens about a predetermined position as a rotation center, and the laser beam refracted by the objective lens is irradiated vertically onto the side wall surface of the correction unit as viewed from above. .

  Preferably, an XY table for moving the objective lens is provided.

  In the fine pattern correction method according to the present invention, the side wall surface of the correction portion is irradiated with laser light obliquely from above and baked. Therefore, compared with the conventional case where the upper surface of the correction portion is irradiated with laser light, sufficient heat can be applied to the bottom of the correction portion, and the bonding between the correction portion and the substrate can be strengthened. Further, since there is no need to increase the laser power, internal stress is not generated and cracks are not generated. Further, the correction work time can be shortened as compared with the method of firing each time one layer is applied.

  FIG. 1A is an external view showing the overall configuration of a fine pattern correction apparatus according to an embodiment of the present invention, and FIG. 1B is an enlarged view of a portion A in FIG. 1 (a) and 1 (b), this fine pattern correction apparatus has a rear glass substrate 80 for a plasma display panel to be corrected placed on the surface thereof and is parallel to the rear glass substrate 80 in the Y-axis direction in the figure. A Y-axis table 1 that moves in the direction Z, a Z-axis table 2 that moves in the Z-axis direction perpendicular to the rear glass substrate 80, and a Z-axis table 2 that is mounted and parallel to the rear glass 80 and perpendicular to the Y-axis. And an X-axis table 3 that moves in the X-axis direction in the figure.

  The Z-axis table 2 has an observation optical system 4 for observing defects in the ribs 83 formed on the surface of the rear glass substrate 80, and a correction paste application mechanism that applies correction paste to the rib defect 85 using a needle. 5 and a continuous wave laser device 6 that irradiates a laser beam to a correction portion made of the applied correction paste and dries or fires it, and an objective lens that is provided below the continuous wave laser device 6 is mounted. A secondary XY table 7 that can move in the direction, a pulsed laser device 8 that cuts excess correction paste protruding from the rib width, a scratch mechanism 9 that removes the cut excess correction paste by a needle or vacuum suction, Tape polishing unit 10 for removing protrusion defect 86 on rib 83 and correction paste protruding on rib 83 using a polishing tape, and Z-axis table A laser displacement meter 11 to be detected is provided the distance between the back glass substrate 80 surface and the. The Z-axis table 2 is driven by a Z-axis drive motor 12.

  The correction paste may be applied by a dispenser method, applied by an ink jet method, or by any method instead of being applied using an application needle. Further, instead of polishing the projection defects 86 and the like using the polishing tape, polishing may be performed using a rotating grindstone.

  The observation optical system 4 includes a microscope including a plurality of objective lenses and a revolver that selects any one of them, and a CCD camera. The correction paste application mechanism 5 includes an application needle, an actuator that drives the application needle up and down, a tank of correction paste, and the like. The observation optical system 4, the correction paste application mechanism 5, the laser devices 6 and 8, the sub XY table 7, the scratch mechanism 9, the tape polishing unit 10, and the laser displacement meter 11 constitute a correction head.

  The Z-axis table 2 adjusts the focus of the observation optical system 4 by positioning the substrate 80 and the correction head relative to each other in the Z direction perpendicular to the rear glass substrate 80, or adjusts the Z axis direction of the correction paste application mechanism 5 in the Z-axis direction. It is used for positioning and bringing the needle of the scratch mechanism 9 and the polishing head of the tape polishing unit 10 into contact with the projection defect 86 and the like. The X-axis table 3 and the Y-axis table 1 are used for relative positioning of the substrate 80 and the correction head in an XY plane parallel to the rear glass substrate 80. Each of the X-axis table 3, the Y-axis table 1, and the Z-axis table 2 is driven by a motor, a ball screw, or the like. Note that the configuration of the positioning mechanism is not limited to the tables 1 to 3, and any configuration may be used as long as the relative position of the substrate 80 and the correction head can be adjusted in the X, Y, and Z directions.

  The fine pattern correction device includes a control unit 13 that controls the entire fine pattern correction device, an operation unit 14 that serves as a user interface, and an image display unit 15 that displays an image captured by a CCD camera. The control unit 13 sends a control signal to the entire fine pattern correction device based on a command signal from the operation unit 14. The operation unit 14 includes a coordinate input device, various operation instruction devices, and the like.

  FIGS. 2A to 2F are views showing a method of correcting the rib chip defect 85 using the fine pattern correction apparatus. First, as shown in FIG. 2A, the rear glass substrate 80 on which the ribs 83 are formed is placed on the Y-axis table 1, the Y-axis table 1 and the X-axis table 3 are moved in the horizontal direction, and the ribs are missing. Position the defect 85 so that it is directly below the correction paste application mechanism 5. Next, as shown in FIG. 2B, the correction paste application mechanism 5 attaches the correction paste 21 to the application needle 20 and applies it to the rib chip defect 85. As the correction paste applying mechanism 5, for example, a mechanism as shown in FIG. 8 of JP-A-9-265007 is used. Hereinafter, the correction paste 21 applied to the rib chip defect 85 is referred to as a correction portion 30.

Next, as shown in FIG. 2C, the correction unit 30 is irradiated with a laser beam by a continuous wave laser device 6 such as a CO ₂ laser and dried. 2B and 2C may be repeated a plurality of times to fill the rib chip defect 85. Next, as shown in FIG. 2 (d), by applying laser light along the width of the rib 83 by the pulsed laser device 7, the excess correction paste 21 protruding from the width of the rib 83 in the correction portion 30. Cut and separate.

  Next, as shown in FIG. 2 (e), the protruding portion of the correction paste 21 separated from the rib 83 is removed by the scratch needle 22 of the scratch mechanism 8. The scratch mechanism unit 8 is provided with a vacuum function (not shown), and can suck the debris of the correction paste 21 removed by the scratch needle 22. For this reason, it becomes possible to keep a correction location in a clean state even after correction.

  Next, as shown in FIG. 2 (f), the correction unit 30 is irradiated with a laser beam stronger than that in FIG. To do. Finally, the correction paste 21 protruding from the rib apex of the correction portion 30 is removed by the polishing tape of the tape polishing unit 10, and the correction of the rib chip defect 85 is completed.

  Hereinafter, a firing method of the correction unit 30 which is a feature of this embodiment will be described. In the present invention, as shown in FIG. 3, the side wall surface of the correction portion 30 made of the correction paste 21 applied to the rib chip defect 85 is irradiated with the laser beam α from the upper oblique direction and fired. The laser light α is incident at a predetermined angle θ with respect to the vertical line. The portion of the correction unit 30 that protrudes from the normal rib virtual line L is removed by the tape polishing unit 10 or the like. When the correction portion 30 is longer than the diameter of the laser spot 31, the laser spot 31 is moved along the length direction of the rib 83 to be corrected as shown in FIG.

  FIG. 5 is a diagram illustrating a configuration of an optical system for obliquely irradiating the side wall surface of the correction unit 30 with the laser light α. In FIG. 5, a secondary XY table 7 on which an objective lens 32 is mounted is installed on the Z-axis table 2 that can move in the XYZ directions relative to the rear glass substrate 80 having the correcting portion 30. The collimated laser beam α emitted from the continuous wave laser device 6 is irradiated to a predetermined position (laser beam irradiation point 33) that is off the center 32a of the objective lens 32. The laser light α is refracted by the objective lens 32 and travels toward the focal point F on the center line of the objective lens 32. Note that the irradiation angle from above of the laser light α is selected based on the focal length of the objective lens 32. Further, at the time of position adjustment before firing, the laser power is adjusted to a sufficiently low level.

  Further, as shown in FIG. 6, the sub-XY table 7 is moved, the objective lens 32 is rotated around the laser beam irradiation point 33, and the position of the objective lens center 32a is adjusted so that the objective lens 32 is transmitted. The side wall surface of the rib 83 having the correcting portion 30 is irradiated with laser light α vertically as viewed from above.

  In this state, by driving the tables 1 to 3 and moving the Z-axis table 2 on which the continuous wave laser device 6 and the sub XY table 7 are mounted in the XYZ directions with respect to the rear glass substrate 80, a correction portion to be actually fired. The position of the laser spot 31 with respect to the 30 side wall surfaces is adjusted. Thereby, the objective lens center 32 a and the laser beam irradiation point 33 are set in the optimum position and the optimum direction with respect to the side wall surface of the correction unit 30. After these settings are completed, the laser power is set to a predetermined level and firing is performed by irradiating the laser beam α for a predetermined time. When the length of the correction portion 30 is longer than the diameter of the laser spot 31, the laser spot 31 is moved from end to end of the correction portion 30 and firing is performed.

  In this embodiment, the correction unit 30 is baked by irradiating the side wall surface of the correction unit 30 with laser light α obliquely from above. Therefore, sufficient heat can be applied to the bottom of the correction portion 30 and the coupling between the correction portion 30 and the dielectric layer 80 can be strengthened. Further, since there is no need to increase the laser power, internal stress is not generated and cracks are not generated. Further, the correction work time can be shortened as compared with the method of firing each time one layer is applied.

  In this embodiment, the objective lens 32 is moved by the sub XY table 7 and the direction of the laser light α after passing through the objective lens 32 is adjusted. However, the objective lens 32 is replaced by the sub XY table 7. The direction of the laser beam α after passing through the objective lens 32 may be adjusted by providing a holder to hold and rotating the holder around the laser beam irradiation point 33 as the rotation center.

  In this embodiment, the correction of the rib chip defect 85 of the stripe-shaped rib 83 has been described. Needless to say, the rib chip defect of the waffle rib can also be corrected.

  In this embodiment, the case where the present invention is applied to the correction of the rib chip defect 85 of the plasma display panel has been described. However, the present invention is not limited to this, and the present invention attaches the correction paste 21 to the defect. Any method of correcting defects by firing can be applied. Further, the present invention can also be applied to the case where pastes are applied to electrodes and wires and baked to form protrusions.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 is a diagram showing an overall configuration of a fine pattern correction apparatus according to an embodiment of the present invention. It is a figure which shows the correction method of the rib chip defect using the fine pattern correction apparatus shown in FIG. It is a figure which shows the baking method shown in FIG. It is another figure which shows the baking method shown in FIG. It is a figure which shows concretely the baking method shown in FIG. It is another figure which shows the baking method shown in FIG. 3 concretely. It is a figure for demonstrating the structure of a plasma display panel. It is a figure which shows the defect which generate | occur | produced in the rib shown in FIG.

Explanation of symbols

  1 Y-axis table, 2 Z-axis table, 3 X-axis table, 4 observation optical system, 5 correction paste application mechanism, 6 continuous wave laser device, 7 sub XY table, 8 pulse oscillation laser device, 9 scratch mechanism, 10 tape polishing Unit, 11 Laser displacement meter, 12 Z-axis drive motor, 13 Control unit, 14 Operation unit, 15 Image display unit, 20 Application needle, 21 Correction paste, 22 Scratch needle, 30 Correction unit, α Laser light, L Normal rib virtual Line, 31 laser spot, 32 objective lens, 32a objective lens center, F objective lens focal point, 33 laser beam irradiation point, 70 front glass substrate, 71 transparent electrode, 72 bus electrode, 73, 82 dielectric layer, 74 protective film, 80 rear glass substrate, 81 address electrode, 83 rib, 84 phosphor layer.

Claims (4)

In a fine pattern correction method in which a correction paste is applied to defects in a fine pattern formed on a substrate, and a correction portion made of the applied correction paste is irradiated with a laser beam and fired.
A fine pattern correction method, wherein the laser beam is radiated and fired obliquely from above the side wall surface of the correction portion. An objective lens is provided above the correction unit,
Irradiating the laser beam from above to a predetermined position off the center of the objective lens,
The fine pattern correction method according to claim 1, wherein a laser beam refracted by the objective lens and directed toward a focal point is irradiated to a side wall surface of the correction unit.   The position of the objective lens is adjusted by rotating the objective lens about the predetermined position as a rotation center, and the laser beam refracted by the objective lens is irradiated vertically onto the side wall surface of the correction unit as viewed from above. The fine pattern correction method according to claim 2, wherein:   The fine pattern correction method according to claim 3, wherein an XY table for moving the objective lens is provided.

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