JP2007041553A5

JP2007041553A5 -

Info

Publication number: JP2007041553A5
Application number: JP2006166890A
Authority: JP
Filing date: 2006-06-16
Publication date: 2009-07-30
Anticipated expiration: 2026-06-16

Claims

A colored film formed on the substrate;
An insulating film formed on the colored film;
A thin film transistor formed on the insulating film;
Have a said thin film transistors electrically connected to a pixel electrode,
The thin film transistor includes a gate electrode, a gate insulating film, a first semiconductor film, a source region, a drain region, a source electrode, and a drain electrode,
The first semiconductor film is formed on the gate electrode through the gate insulating film,
A liquid crystal display device, wherein a conductive film is provided on the first semiconductor film and in a position overlapping with the gate electrode.

In claim 1 ,
The liquid crystal display device, wherein the pixel electrode is formed at a position overlapping the colored film.

A colored film formed on the substrate;
An insulating film formed on the colored film;
A thin film transistor, a pixel electrode, and a common electrode formed on the insulating film;
The thin film transistor and the pixel electrode are electrically connected ,
The thin film transistor includes a gate electrode, a gate insulating film, a first semiconductor film, a source region, a drain region, a source electrode, and a drain electrode,
The first semiconductor film is formed on the gate electrode through the gate insulating film,
The common electrode is made of the same conductive film as the gate electrode,
A liquid crystal display device, wherein a conductive film is provided on the first semiconductor film and in a position overlapping with the gate electrode.

In claim 3 ,
The liquid crystal display device, wherein the pixel electrode and the common electrode are formed at a position overlapping the colored film.

In claim 3 ,
One or both of the pixel electrode and the common electrode are formed of a transparent conductive film.

In any one of Claims 1 thru | or 5 ,
Before SL is the first semiconductor film, a liquid crystal display device comprising silicon, an amorphous semiconductor mainly containing silicon germanium, or that an amorphous state and a crystalline state are made of a semi-amorphous semiconductor mixed.

In any one of Claims 1 thru | or 6 ,
The conductive film, a liquid crystal display device characterized by comprising the source electrode, and the same conductive film as the drain electrodes.

In any one of Claims 1 thru | or 7 ,
Before SL is the first semiconductor film, and a position overlapping with the gate electrode, a liquid crystal display apparatus characterized by the second semiconductor film forming the source region and the drain region is formed.

In any one of Claims 1 thru | or 8 ,
A pre SL on the first semiconductor film, and wherein and absolute Entai is formed on the gate electrode and overlapping position, on said insulator, a second semiconductor film forming the source region and the drain region a liquid crystal display device, characterized in that before and Kishirube conductive film is formed.

In any one of Claims 1 thru | or 9 ,
Before Kishirube film is a liquid crystal display device, characterized in that less than the width of the gate electrode.

In any one of Claims 1 thru | or 10 ,
Before SL conductive film, a liquid crystal display device, characterized in that said the gate electrode and electrically connected via the auxiliary wiring.

In any one of Claims 1 thru | or 11 ,
Before SL auxiliary line, a liquid crystal display device characterized by being formed of the same material as the pixel electrode.

In claim 9,
2. The liquid crystal display device according to claim 1, wherein the insulator is thicker than the source electrode and the drain electrode.

Forming a colored film on the substrate,
Forming an insulating film on the colored film;
Forming a gate electrode made of a first conductive film on the insulating film;
Forming a gate insulating film on the gate electrode;
Forming a first semiconductor film on the gate insulating film;
Forming an insulator at a position overlapping with the gate electrode on a part of the first semiconductor film;
Forming a source region and a drain region composed of a second semiconductor film separated and formed by the insulator on the first semiconductor film;
Forming a source electrode and a drain electrode made of a second conductive film separated and formed by the insulator on the second semiconductor film;
A method for manufacturing a liquid crystal display device, wherein a pixel electrode electrically connected to the drain electrode is formed at a position overlapping the colored film.

Forming a colored film on the substrate,
Forming an insulating film on the colored film;
Forming a gate electrode made of a first conductive film on the insulating film;
Forming a gate insulating film on the gate electrode;
Forming a first semiconductor film on the gate insulating film;
Forming an insulator at a position overlapping with the gate electrode on a part of the first semiconductor film;
Forming a source region and a drain region composed of a second semiconductor film separated and formed by the insulator on the first semiconductor film;
Forming a source electrode, a drain electrode, and a light-shielding body made of a second conductive film separated and formed by the insulator on the second semiconductor film;
A method for manufacturing a liquid crystal display device, wherein a pixel electrode electrically connected to the drain electrode is formed at a position overlapping the colored film.

Forming a colored film on the substrate,
Forming an insulating film on the colored film;
Forming a gate electrode and a common electrode made of a first conductive film on the insulating film;
Forming a gate insulating film on the gate electrode and the common electrode;
Forming a first semiconductor film on the gate insulating film;
Forming an insulator at a position overlapping with the gate electrode on a part of the first semiconductor film;
Forming a source region and a drain region composed of a second semiconductor film separated and formed by the insulator on the first semiconductor film;
Forming a source electrode, a drain electrode, and a light shielding body made of the second conductive film separated and formed by the insulator on the second semiconductor film;
Forming a pixel electrode electrically connected to the drain electrode;
A method for manufacturing a liquid crystal display device, wherein the common electrode and the pixel electrode are formed at a position overlapping the colored film.

In claim 16 ,
A method for manufacturing a liquid crystal display device, wherein either one or both of the pixel electrode and the common electrode are formed of a transparent conductive film.

In claim 15 or 16,
The method for manufacturing a liquid crystal display device, wherein the light shielding body is smaller than a width of the gate electrode.

In claim 15 or 16 ,
The method for manufacturing a liquid crystal display device, wherein the light shield is electrically connected to the gate electrode through an auxiliary wiring formed simultaneously with the pixel electrode.

In claim 19,
The method for manufacturing a liquid crystal display device, wherein the auxiliary wiring is formed of the same material as the pixel electrode.

In any one of Claims 14 to 20 ,
The first semiconductor film is formed using an amorphous semiconductor mainly composed of silicon or silicon germanium, or a semi-amorphous semiconductor in which an amorphous state and a crystalline state are mixed. Manufacturing method.

In any one of Claims 14 to 21,
The method for manufacturing a liquid crystal display device, wherein the insulator has a thickness larger than that of the source electrode and the drain electrode.