JP2007036067A - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of easily improving an adhesiveness between an organic insulating film and an inorganic insulating film without adding a film for adhesion to an interlayer insulating film. <P>SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming the interlayer insulating film 10 including the organic insulating film 12 and the inorganic insulating films 11, 13 on a semiconductor substrate 1, and sticking the film 12 and the films 11, 13 by irradiating an electron beam EB or an ultraviolet beam UV to the film 10. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device that employs an organic insulating film as an interlayer insulating film.

  In recent years, due to the demand for high-speed operation of semiconductor elements, the interlayer insulating film has been changed from a conventional silicon oxide film (dielectric constant k = about 4.3) to a material having a low dielectric constant, and studies have been made to reduce the capacitance between wirings. Has been done. Examples of the low dielectric constant insulating material include inorganic insulating film materials such as SiOC films and SiO films having a dielectric constant of about 3, and organic insulating film materials such as polyarylene.

  In order to further reduce the dielectric constant, so-called porous materials that reduce the film density by introducing fine pores (pores) in these films or making the molecular structure of the monomer voids are used. Has been developed. Some porous materials having a dielectric constant lowered to about 2.2 have been reported. By using such a material for the interlayer insulating film, crosstalk between wirings can be reduced, and high-speed operation of the semiconductor element can be realized.

  However, a film made of a low dielectric constant insulating material may cause poor adhesion with a film formed above or below the film. In particular, the adhesion between the organic insulating film and the inorganic insulating film is significantly reduced. Further, when these insulating film materials are made porous, the film density is lowered and the adhesion is significantly lowered.

Patent Documents 1 and 2 disclose techniques for solving poor adhesion of a low dielectric constant film.
Patent Document 1 discloses a technique for improving adhesion by providing an MHSQ (methylated hydrogensilsesoxane) film between insulating films having low adhesion. Patent Document 2 discloses a technique for improving adhesion by providing a BCB (benzocyclobutene) film between insulating films having low adhesion.

  In the above-described prior art, an adhesion film such as an MHSQ film or a BCB film is added to the interlayer insulating film. In this case, the dielectric constant is increased by these films, and the low dielectric constant of the interlayer insulating film is increased. There was a problem that the effect of the reduction was reduced. Further, increasing the layer structure of the interlayer insulating film also causes problems that increase the number of manufacturing process steps, change the processing process of the interlayer insulating film, and complicate the processing process.

Patent Documents 3 and 4 disclose techniques for improving the adhesion between insulating films having low adhesion without adding an adhesion film to the interlayer insulating film. Patent Document 3 discloses a technique for improving the adhesion between a base insulating film and an upper insulating film by irradiating ultraviolet rays after forming a base insulating film and then forming an upper insulating film. ing. Patent Document 4 discloses a technique for improving the adhesion between a base insulating film and an upper insulating film by irradiating an electron beam after forming a base insulating film and then forming an upper insulating film. Has been.
JP 2001-326222 A JP 2004-95863 A JP-A-10-209275 JP 2004-186512 A

  In each of Patent Documents 3 and 4 described above, the upper insulating film is formed after the surface of the underlying insulating film is irradiated with ultraviolet rays or electron beams. In these methods, it is considered that dangling bonds (unbonded hands) are formed by irradiating the surface of the underlying insulating film with ultraviolet rays or electron beams. However, in this method, since the substrate is exposed to the atmosphere during transportation to a film forming apparatus for forming an upper insulating film after irradiation with ultraviolet rays or the like, there is an effect of improving the adhesion with the upper insulating film. There was a problem of reduction. This is probably because dangling bonds formed by irradiation with ultraviolet rays or the like have trapped particles in the atmosphere.

  The present invention has been made in view of the above circumstances, and an object thereof is to easily improve the adhesion between an organic insulating film and an inorganic insulating film without adding an adhesion film to the interlayer insulating film. Another object of the present invention is to provide a method for manufacturing a semiconductor device capable of performing

  In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention includes a step of forming an interlayer insulating film including a laminated film of an organic insulating film and an inorganic insulating film on a semiconductor substrate; And irradiating an electron beam or ultraviolet rays to bring the organic insulating film and the inorganic insulating film into close contact with each other.

  In the method for manufacturing a semiconductor device of the present invention, an interlayer insulating film including a laminated film of an organic insulating film and an inorganic insulating film is formed on a semiconductor substrate, and then the electron beam or ultraviolet rays are irradiated on the interlayer insulating film. When the interlayer insulating film is irradiated with an electron beam or an ultraviolet ray, the electron beam or the ultraviolet ray passes through the interlayer insulating film, and energy is given to each bond of the inorganic insulating film and the organic insulating film in the interlayer insulating film to bond. By being cut, a dangling bond is generated. The unbonded hand is bonded to a nearby unbonded hand so as to proceed in a direction in which it is stable in terms of energy. In the above recombination process, the bond between the inorganic insulating film and the organic insulating film is bonded at the interface between the inorganic insulating film and the organic insulating film, thereby bonding the inorganic insulating film and the organic insulating film. Will improve.

  According to the method for manufacturing a semiconductor device of the present invention, the adhesion between the organic insulating film and the inorganic insulating film can be easily improved without adding an adhesion film to the interlayer insulating film.

  Embodiments of the present invention will be described below with reference to the drawings.

  As shown in FIG. 1A, a case where an interlayer insulating film 10 composed of a laminated film of an inorganic insulating film 11, an organic insulating film 12, and an inorganic insulating film 13 is formed in the upper layer of the semiconductor substrate 1 will be described.

  As the inorganic insulating film 11, a carbon-containing silicon-based film or a silicon-based film is used. Here, as the inorganic insulating film 11, it is preferable to use the inorganic insulating film 11 having a dielectric constant lower than that of silicon dioxide (dielectric constant k = 4.3). Among such low dielectric constant materials, the carbon-containing silicon film includes an SiOC film, and the silicon film includes an SiO film. The dielectric constant of the SiOC film or the SiO film is about 3.

The SiOC film is formed by, for example, a spin coating method or a CVD method. For example, after spin-coating an MSQ (Methyl Silsesquioxane) solution on the semiconductor substrate 1, a heat treatment is performed to dry the solvent and solidify the methyl silsesquioxane to form an SiOC film. Alternatively, the SiOC film is formed by plasma CVD using trimethylsilane and N ₂ O, trimethylsilane and N ₂ O, O ₂ , CO ₂ , or a mixed gas of OMCTS and N ₂ O, O ₂ , CO ₂ as source gases. Form.

  The SiO film is formed by, for example, a spin coating method or a CVD method. For example, after spin-coating an HSQ (Hydrogen Silsesquioxane) solution on the semiconductor substrate 1, a heat treatment is performed to dry the solvent and solidify the hydrogen silsesquioxane to form an SiO film. To do.

  After forming the inorganic insulating film 11, the organic insulating film 12 is formed. As the organic insulating film 12, an organic insulating film material having a dielectric constant lower than that of silicon dioxide (dielectric constant k = 4.3) is used. For example, polyarylene, which is an organic compound material containing an aromatic ring, is used as the organic insulating film 12. The organic insulating film 12 is formed by, for example, a spin coating method.

  After forming the organic insulating film 12, an inorganic insulating film 13 is formed. The inorganic insulating film 13 is formed because the organic insulating film 12 is inferior in mechanical strength. Therefore, stress is applied to the organic insulating film 12 in a CMP (Chemical Mechanical Polishing) process or the like, and the organic insulating film 12 may be damaged. Because. Therefore, an inorganic insulating film 13 having mechanical strength is laminated on the organic insulating film 12 as a protective film to maintain a low dielectric constant and mechanical strength.

  As the inorganic insulating film 13, similarly to the inorganic insulating film 11, a carbon-containing silicon-based film or a silicon-based film is used. From the viewpoint of lowering the dielectric constant, it is preferable to use as the inorganic insulating film 11 an inorganic insulating film 11 having a dielectric constant lower than that of silicon dioxide (dielectric constant k = 4.3). Among such low dielectric constant materials, the carbon-containing silicon film includes an SiOC film, and the silicon film includes an SiO film.

  The inorganic insulating film 11 and the organic insulating film 12, and the organic insulating film 12 and the inorganic insulating film 13 have low adhesion. For example, when the inorganic insulating film 11 is formed, the atoms in the inorganic insulating film 11 are in a chemically stable state. For this reason, when the upper organic insulating film 12 is formed, the underlying inorganic insulating film 11 is already in a chemically stable state, so that the chemical bond between the organic insulating film 12 and the inorganic insulating film 11 is achieved. Cannot be expected. The same applies between the organic insulating film 12 and the inorganic insulating film 13. If the adhesion between the films is low, a wiring groove or the like is formed in the interlayer insulating film 10, a conductive layer is embedded in the wiring groove, and an excess conductive layer on the interlayer insulating film is removed by CMP. ~ 13 may peel off.

  In this embodiment, in order to improve the adhesion by promoting recombination between the inorganic insulating film 11 and the organic insulating film 12 and between the organic insulating film 12 and the inorganic insulating film 13, as shown in FIG. After the interlayer insulating film 10 made of a laminated film is formed, electron beam (EB) irradiation or ultraviolet (UV) irradiation treatment is performed. In the electron beam irradiation or ultraviolet treatment, it is preferable to perform the heat treatment at the same time.

  When the interlayer insulating film 10 is irradiated with an electron beam or ultraviolet rays, electrons pass through the interlayer insulating film 10, and each bond of the inorganic insulating film 11, the organic insulating film 12, and the inorganic insulating film 13 in the interlayer insulating film 10 is passed. Energy is applied to break the bond, and a dangling bond (unbonded hand) is generated. The dangling bonds recombine with neighboring dangling bonds so as to proceed in a direction in which they are stable in terms of energy.

  In the above recombination process, the dangling bonds of the inorganic insulating film 11 and the dangling bonds of the organic insulating film 12 are combined at the interface between the inorganic insulating film 11 and the organic insulating film 12, whereby the inorganic insulating film 11 and the organic insulating film 11 are organically bonded. The adhesion of the insulating film 12 is improved. Further, at the interface between the organic insulating film 12 and the inorganic insulating film 13, the dangling bond of the organic insulating film 12 and the dangling bond of the inorganic insulating film 13 are bonded to each other, so that the adhesion between the organic insulating film 12 and the inorganic insulating film 13 is achieved. Will improve.

  In this embodiment, since the inorganic insulating film 11, the organic insulating film 12, and the inorganic insulating film 13 are stacked and then irradiated with an electron beam or ultraviolet rays, the generated dangling bonds are effectively recombined with nearby dangling bonds. To do. For this reason, it is possible to prevent trapping particles in the atmosphere as compared with the conventional method of forming the organic insulating film 12 after forming the inorganic insulating film 11 and irradiating with an electron beam or ultraviolet rays. The method according to the method has a greater effect of improving the adhesiveness than the conventional method.

  By simultaneously performing a heat treatment while irradiating an electron beam or ultraviolet rays, recombination of dangling bonds can be promoted. For this reason, the adhesive force between the inorganic insulating film 11 and the organic insulating film 12 and between the organic insulating film 12 and the inorganic insulating film 13 can be further improved.

  From the viewpoint of improving adhesion, both electron beams and ultraviolet rays are effective, but it is preferable to use ultraviolet rays rather than electron beams. In the case of an electron beam, the depth reached by the electron beam can be adjusted by the acceleration voltage, but it may reach the semiconductor substrate 1 in some cases. Since a transistor or the like is formed on the semiconductor substrate 1, if the electron beam reaches the semiconductor substrate 1 and electrons are captured by the gate insulating film of the transistor, the threshold value of the transistor is changed. This is because it causes operation.

  On the other hand, in the case of ultraviolet rays, it is possible to irradiate ultraviolet rays only into the interlayer insulating film 10 without reaching the semiconductor substrate 1. In the case of ultraviolet rays, unlike the case of a high-energy electron beam, the bond to be cut can be selected by setting the wavelength. This is because the wavelength band to be absorbed differs depending on the coupling. Therefore, by selecting an appropriate wavelength according to the materials of the inorganic insulating films 11 and 13 and the organic insulating film 12, it is necessary to improve the adhesion by recombination without breaking all the bonds in the film. Only bonds can be broken.

  As other methods for breaking the bonds in the film, heat treatment and plasma treatment can be considered. However, after the inorganic insulating film 11, the organic insulating film 12, and the inorganic insulating film 13 were formed, heat treatment or plasma treatment was performed, but the effect of improving adhesion was small. This is because the heat treatment has low energy and the bond cannot be effectively cut. Further, the plasma treatment can cut the bond on the outermost surface of the interlayer insulating film 10, but the bond at the interface of each film in the interlayer insulating film 10 could not be cut.

  As described above, after the interlayer insulating film 10 is formed, the inorganic insulating film 11 and the organic insulating film 12 and the organic insulating film 12 and the inorganic insulating film 13 in the interlayer insulating film 10 are performed by performing electron beam and ultraviolet treatment. It is possible to improve the adhesion.

  Next, a more detailed manufacturing process of the semiconductor device will be described. In the present embodiment, an example in which a semiconductor device having a wiring structure shown in FIG. 2 is formed will be described.

  An interlayer insulating film 3 is formed on the upper layer of the semiconductor substrate 1 such as silicon. The interlayer insulating film 3 is composed of, for example, a laminated film of an organic insulating film 4 and an inorganic insulating film 5. The organic insulating film 4 is made of polyarylene, for example. The inorganic insulating film 5 is made of, for example, a SiOC film. The inorganic insulating film 5 has a role as a protective layer of the organic insulating film 4 having a low mechanical strength and a role as a hard mask.

  A wiring groove 3 a is formed in the interlayer insulating film 3, and a conductive layer 7 made of, for example, copper is embedded in the wiring groove 3 a through a barrier metal layer 6. The first metal wiring M1 is formed by the conductive layer 7 embedded in the wiring groove 3a. When copper is used for the conductive layer 7, copper is likely to diffuse into the surrounding insulating material. In order to prevent this copper diffusion, a barrier metal layer 6 is provided between the conductive layer 7 and the interlayer insulating film 3. The barrier metal layer 6 is made of, for example, tantalum or a laminated film of tantalum nitride and tantalum.

  Under the conductive layer 7 and the interlayer insulating film 3, an etching stopper film 2 made of, for example, SiCN is formed. The etching stopper film 2 also functions as a diffusion preventing film that prevents diffusion of the metal constituting the first metal wiring M1. Although not shown, an interlayer insulating film is further formed between the etching stopper film 2 and the semiconductor substrate 1, and a contact is formed on the interlayer insulating film. Transistors and other semiconductor elements are formed on the semiconductor substrate 1, and the semiconductor elements and the first metal wiring M1 are connected through the contacts.

  An etching stopper film 8 made of, for example, SiCN is formed on the conductive layer 7 and the interlayer insulating film 3. The etching stopper film 8 also functions as a diffusion preventing film that prevents diffusion of the metal constituting the first metal wiring M1.

  An interlayer insulating film 10 is formed on the etching stopper film 8. The interlayer insulating film 10 is formed of a laminated film of an inorganic insulating film 11, an organic insulating film 12, and an inorganic insulating film 13. The inorganic insulating film 13 has a role as a protective layer for the organic insulating film 12 having a low mechanical strength and a role as a hard mask. The inorganic insulating film 11, the organic insulating film 12, and the inorganic insulating film 13 are as described with reference to FIG.

  A wiring groove 10 b is formed in the inorganic insulating film 13 and the organic insulating film 12 in the interlayer insulating film 10, and a connection hole 10 a is formed in the inorganic insulating film 11. The connection hole 10 a is also formed in the etching stopper film 8.

  A conductive layer 17 made of, for example, copper is embedded in the connection hole 10a and the wiring groove 10b with a barrier metal layer 16 interposed therebetween. The second metal wiring M2 is formed by the conductive layer 17 embedded in the wiring groove 10b. A contact C connecting the second metal wiring M2 and the first metal wiring M1 is formed by the conductive layer 17 embedded in the connection hole 10a. The barrier metal layer 16 prevents copper diffusion and is formed of tantalum or a laminated film of tantalum nitride and tantalum.

  An etching stopper film 18 made of, for example, SiCN is formed on the second metal wiring M2 and the interlayer insulating film 10, and although not shown, the interlayer insulating film and the third metal wiring are on the etching stopper film 18. It is formed.

  A method for manufacturing the semiconductor device will be described with reference to FIGS.

  First, as shown in FIG. 3A, after forming transistors and other semiconductor elements on the semiconductor substrate 1, an interlayer insulating film and an etching stopper film 2 (not shown) are formed, and the interlayer insulating film and the etching stopper film 2 are formed. A contact is formed on. Thereafter, an interlayer insulating film 3 composed of a laminated film of the organic insulating film 4 and the inorganic insulating film 5 is formed on the etching stopper film 2. Subsequently, after forming a wiring groove 3a in the interlayer insulating film 3 and depositing a barrier metal layer 6 and a conductive layer 7 so as to fill the wiring groove 3a, an excess barrier metal layer 6 and a conductive layer on the interlayer insulating film 3 are deposited. Layer 7 is removed by CMP. Thereafter, an etching stopper film 8 made of SiCN is formed on the first metal wiring M1 and the interlayer insulating film 3.

  Next, as shown in FIG. 3B, an interlayer insulating film 10 is formed. In the formation of the interlayer insulating film 10, for example, an inorganic insulating film 11 made of SiOC is formed on the etching stopper film 8, an organic insulating film 12 made of polyarylene is formed on the inorganic insulating film 11, and the organic insulating film 12 is formed on the organic insulating film 12. An inorganic insulating film 13 made of SiOC is formed.

  The method for forming the inorganic insulating film 11, the organic insulating film 12, and the inorganic insulating film 13 is as described above. That is, the SiOC film to be the inorganic insulating film 11 and the inorganic insulating film 13 is formed by a spin coating method or a plasma CVD method, and the organic insulating film 12 is formed by a spin coating method.

  After the interlayer insulating film 10 is formed, an electron beam irradiation process or an ultraviolet irradiation process is performed. In the electron beam irradiation treatment or the ultraviolet ray irradiation treatment, the heat treatment is simultaneously performed while irradiating the electron beam or the ultraviolet rays. As a result, the bonding of atoms in the interlayer insulating film 10 made of a laminated film is cut, recombination occurs, and adhesion between different types of insulating films is improved.

  Next, as shown in FIG. 4A, a first hard mask 14 having a pattern of connection holes 10a and a second hard mask 15 having a pattern of wiring grooves 10b are formed on the inorganic insulating film 13. The first hard mask 14 is made of, for example, a silicon nitride film. The second hard mask 15 is made of, for example, a silicon oxide film. In the formation of the hard mask, after a silicon nitride film and a silicon oxide film are stacked on the inorganic insulating film 13, a pattern of the wiring trench 10b is formed in the silicon oxide film by etching using a resist mask. A mask 15 is formed. After removing the resist mask, a resist mask is formed again, and a pattern of the connection hole 10a is formed in the silicon nitride film by etching using the resist mask. Although not shown, the resist mask used for patterning the silicon nitride film may be left. Here, the electron beam irradiation process or the ultraviolet irradiation process described above may be performed after the silicon nitride film and the silicon oxide film serving as the first and second hard masks are formed and before patterning.

  Next, as shown in FIG. 4B, using the first hard mask 14 as an etching mask, the inorganic insulating film 13 is dry-etched, and the organic insulating film 12 is further dry-etched. Thereby, connection holes 10 a are formed in the inorganic insulating film 13 and the organic insulating film 12. The resist mask used when processing the first hard mask 14 is removed in the dry etching of the organic insulating film 12.

  Next, as shown in FIG. 5A, the first hard mask 14 is dry-etched using the second hard mask 15 as an etching mask to form a pattern of the wiring groove 10 b in the first hard mask 14. At this time, a part of the inorganic insulating film 11 made of SiOC is etched, and the connection hole 10 a is formed to a depth in the middle of the inorganic insulating film 11.

  Next, as shown in FIG. 5B, by using the first hard mask 14 as an etching mask, the inorganic insulating film 13 is dry-etched, thereby forming a wiring groove 10b in the inorganic insulating film 13. At this time, the inorganic insulating film 11 is also etched, and a connection hole 10a reaching the etching stopper film 8 is formed. Further, the second hard mask 15 made of silicon oxide is removed by dry etching at this time.

  Next, as shown in FIG. 6A, the etching stopper film 8 on the first metal wiring M <b> 1 is dry-etched to form a connection hole 10 a in the etching stopper film 8. By this etching, the first hard mask 14 made of SiN is removed.

  Next, as illustrated in FIG. 6B, the organic insulating film 12 is etched using the inorganic insulating film 13 as an etching mask, thereby forming a wiring groove 10 b in the organic insulating film 12.

  Next, as shown in FIG. 7A, a barrier metal layer 16 is formed on the interlayer insulating film 10 so as to cover the inner walls of the connection hole 10a and the wiring groove 10b. As the barrier metal layer 16, for example, a laminated film of tantalum nitride and tantalum is formed. Subsequently, a conductive layer 17 made of, for example, copper is formed on the interlayer insulating film 10 so as to fill the connection hole 10a and the wiring groove 10b.

  Next, as shown in FIG. 7B, excess conductive layer 17 and barrier metal layer 16 on interlayer insulating film 10 are removed by CMP. Since the adhesion of the inorganic insulating film 11, the organic insulating film 12, and the inorganic insulating film 13 in the interlayer insulating film 10 is improved, peeling of the insulating film can be prevented in this CMP treatment. A second metal wiring M2 is formed by the conductive layer 17 embedded in the wiring groove 10b, and a contact C is formed by the conductive layer 17 embedded in the connection hole 10a.

  Next, by forming an etching stopper film 18 made of, for example, SiCN on the second metal wiring M2 and the interlayer insulating film 10, the structure shown in FIG. 2 is reached. As the subsequent steps, similarly, a semiconductor device having a multilayer wiring structure is manufactured by performing an interlayer insulating film forming step, a wiring groove and connecting hole forming step in the interlayer insulating film, and a conductive layer embedding step again. The

  As described above, according to the method of manufacturing a semiconductor device according to the present embodiment, after the films having low adhesion, for example, the inorganic insulating film 11, the organic insulating film 12, and the inorganic insulating film 13 are stacked. By performing electron beam irradiation treatment or ultraviolet irradiation treatment, the bonds in the film are broken to generate unbonded hands, and the recombination of the unbonded hands between the upper and lower layers is promoted. Can be improved.

  When an electron beam irradiation process or an ultraviolet irradiation process is performed after a single film is formed, unbonded hands capture and reduce particles in the atmosphere by being exposed to the atmosphere in the subsequent transport process, and the upper layer The effect of improving the adhesion with the insulating film is reduced. On the other hand, in this embodiment, after the films having low adhesion are stacked, the generated unbonded hands are effectively bonded to the surrounding unbonded hands by performing the electron beam irradiation process or the ultraviolet irradiation process. Can be made. Here, in the ultraviolet irradiation treatment or the electron beam irradiation treatment, the recombination of the generated dangling bonds can be promoted by heating while irradiating the ultraviolet rays or the electron beam.

  According to the method for manufacturing a semiconductor device according to this embodiment, the problem of adhesion between the organic insulating film 12 and the inorganic insulating films 11 and 13 above and below the organic insulating film 12 can be solved. The dielectric constant of the interlayer insulating film can be reduced while maintaining the yield. Since the dielectric constant of the interlayer insulating film 10 can be reduced, crosstalk between wirings can be reduced, and high-speed operation of the semiconductor element can be realized.

  Further, by using a low dielectric constant material lower than the dielectric constant of silicon dioxide as the inorganic insulating films 11 and 13 above and below the organic insulating film 12, the dielectric constant of the entire interlayer insulating film 10 can be further lowered.

The present invention is not limited to the description of the above embodiment.
As the inorganic insulating films 11 and 13 and the organic insulating film 12, a material obtained by making these films porous may be used. Moreover, although the example which employ | adopted the low dielectric constant film material as the inorganic insulating films 11 and 13 was demonstrated, as the inorganic insulating films 11 and 13, you may employ | adopt a silicon dioxide film, a SiCN film, a SiC film, and a SiN film. . Since the adhesion between these films and the organic insulating film 12 is low, the present invention is effective. Further, the material of the organic insulating film 12 is not particularly limited.

  In the present embodiment, the example in which the electron beam irradiation process or the ultraviolet irradiation process is performed after the inorganic insulating film 11, the organic insulating film 12, and the inorganic insulating film 13 are stacked has been described. For example, after the inorganic insulating film 11 and the organic insulating film 12 are stacked, an electron beam irradiation process or an ultraviolet irradiation process may be performed.

In the present embodiment, an example of a method for forming the connection hole 10a and the wiring groove 10b in the interlayer insulating film 10 has been described. However, the present invention is not limited to this. Further, for example, after forming the organic insulating film 4 and the inorganic insulating film 5 as the interlayer insulating film 3, and before processing the wiring groove 3 a to the interlayer insulating film 3, an electron beam irradiation process or an ultraviolet irradiation process is performed, The adhesion between the organic insulating film 4 and the inorganic insulating film 5 may be improved. In this embodiment, the dual damascene process in which the connection hole 10a and the wiring groove 10b are simultaneously formed in the interlayer insulating film 10 has been described. However, in the single damascene process in which the connection hole 10a or the wiring groove 10b is formed in the interlayer insulating film 10. It is also possible to apply the present invention.
In addition, various modifications can be made without departing from the scope of the present invention.

It is a figure for demonstrating the electron beam or ultraviolet irradiation process in manufacture of the semiconductor device which concerns on this embodiment. It is sectional drawing which shows an example of the semiconductor device formed with the manufacturing method of the semiconductor device which concerns on this embodiment. It is process sectional drawing in manufacture of the semiconductor device which concerns on this embodiment. It is process sectional drawing in manufacture of the semiconductor device which concerns on this embodiment. It is process sectional drawing in manufacture of the semiconductor device which concerns on this embodiment. It is process sectional drawing in manufacture of the semiconductor device which concerns on this embodiment. It is process sectional drawing in manufacture of the semiconductor device which concerns on this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Etching stopper film, 3 ... Interlayer insulating film, 3a ... Wiring groove, 4 ... Organic insulating film, 5 ... Inorganic insulating film, 6 ... Barrier metal layer, 7 ... Conductive layer, 8 ... Etching stopper film DESCRIPTION OF SYMBOLS 10 ... Interlayer insulating film, 10a ... Connection hole, 10b ... Wiring groove, 11 ... Inorganic insulating film, 12 ... Organic insulating film, 13 ... Inorganic insulating film, 14 ... 1st hard mask, 15 ... 2nd hard mask, 16 ... Barrier metal layer, 17 ... conductive layer, 18 ... etching stopper film

Claims (6)

Forming an interlayer insulating film including a laminated film of an organic insulating film and an inorganic insulating film on a semiconductor substrate;
Irradiating the interlayer insulating film with an electron beam or ultraviolet rays to bring the organic insulating film and the inorganic insulating film into close contact with each other. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of forming the interlayer insulating film, an inorganic insulating film, an organic insulating film, and an inorganic insulating film are sequentially formed. The method of manufacturing a semiconductor device according to claim 1, wherein heating is performed simultaneously while irradiating the electron beam or ultraviolet rays. The method for manufacturing a semiconductor device according to claim 1, wherein the organic insulating film is made of a compound material containing an aromatic ring. The method for manufacturing a semiconductor device according to claim 1, wherein the inorganic insulating film is made of a silicon-based film or a carbon-containing silicon-based film. After the step of irradiating with an electron beam or ultraviolet rays,
Forming a wiring groove or a connection hole in the interlayer insulating film;
Forming a conductive layer on the interlayer insulating film so as to fill the wiring groove or the connection hole;
The method of manufacturing a semiconductor device according to claim 1, further comprising: polishing the conductive layer on the interlayer insulating film to leave the conductive layer only in the wiring groove or the connection hole.

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