JP2007036046A - Optical transmitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve precision in temperature control within a package by reducing the effect of flowing in/out of heat at a temperature measuring element. <P>SOLUTION: The optical transmitting device 1 comprises an electronic cooling device 21 housed inside a package 10, a carrier 22 of insulating material for mounting a semiconductor laser element 24 which is mounted on an upper side substrate 21a of the electronic cooling device 21 inside the package 10, a thermistor 25 which is mounted on the carrier 22 for detecting temperature inside the package 10, a heat conductor 26 comprising a support body 26a which is supported on the upper surface of the carrier 22 and a connection body 26b connected on the same plane of an upper side electrode 25a of the thermistor 25, a stacked ceramic 12c for outputting signals outside from the thermistor 25, and a wire 27 for electrically connecting the heat conductor 26 with the stacked ceramic 12c. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an optical transmission device used in optical communication.

  In high-speed (for example, 10 Gbps) optical communication, high wavelength accuracy is required for an optical transmission device because light of a plurality of different wavelengths is used as in a WDM (Wavelength Division Multiplexing) system. Such an optical transmission device includes a temperature measuring element and an electronic cooler, and the wavelength accuracy is maintained high by controlling the temperature of the light emitting element using the temperature measuring element and the electronic cooler. In this case, the accuracy of the temperature detected by a temperature measuring element such as a thermistor for detecting the temperature inside the optical transmission device becomes a problem.

  In order to cope with such a problem, in the semiconductor laser module described in Patent Document 1 below, the thermistor electrode is wire-bonded to a relay block having insulation and thermal conductivity on the carrier to connect the relay block to an external pin. This prevents the heat from flowing into the thermistor through the bonding wire and the terminal. Further, in the semiconductor laser module described in Patent Document 2 below, the electrode of the thermistor and the wiring pattern provided on the side wall of the package are connected by a bonding wire via the wiring pattern provided on the substrate on the electronic cooler. This reduces the influence of the ambient temperature on the thermistor.

Furthermore, in the semiconductor laser module described in Patent Document 3, the semiconductor laser is disposed on a heat sink mounted on a metal base, and the thermistor is disposed on a thermistor substrate mounted on the metal base. In such a structure, the semiconductor laser is operated at the thermistor temperature by adjusting the thermal resistance from the metal base to the laser diode and the thermal resistance from the metal base to the thermistor. Further, in the laser diode module described in Patent Document 4 below, a laser diode and a thermistor are mounted on a base, and a metal plate is provided to thermally connect a portion in the vicinity of the laser diode of the base and the housing. The diode is set to have approximately the same temperature. Further, in the semiconductor laser device described in Patent Document 5 below, the impedance matching circuit, which is a resistor, is provided not on the metal base on the Peltier element but on the terminal wiring shelf separated from the Peltier element. The number of bonding wires connecting each element on the Peltier element and the terminal wiring shelf is also reduced, and heat inflow into the package is reduced.
Japanese Patent No. 3035852 JP 2002-232067 A JP 2001-244545 A JP-A-8-195528 JP-A-6-318863

  However, in the conventional optical transmission module described above, heat flows in and out between the outside and the thermistor through the bonding wire connected to the thermistor electrode. As a result, the amount of heat that flows out or inflows between the two electrodes of the thermistor is different, resulting in a temperature difference between the two electrodes of the thermistor. Such a temperature difference between the electrodes lowers the accuracy of the temperature detected by the thermistor, and causes a problem that the temperature control accuracy of the light emitting element is lowered.

  SUMMARY OF THE INVENTION An object of the present invention is to provide an optical transmission device that can improve the accuracy of temperature control in a package by reducing the influence of heat flow in and out of a temperature measuring element.

  In order to solve the above problems, an optical transmission device of the present invention includes an electronic cooler housed in a package and a carrier made of an insulating material mounted on the upper surface of the electronic cooler in the package and mounting a semiconductor light emitting element. And a metal member that includes a temperature measuring element that is mounted on the carrier and detects the temperature inside the package, and a support body that is supported on the upper surface of the carrier and a connection body that is connected on the same plane as the electrode of the temperature measuring element. And a wiring board for outputting a signal from the temperature measuring element to the outside, and a wiring member for electrically connecting the metal member and the wiring board.

  In such an optical transmission device, the temperature on the carrier is detected by a thermistor mounted on the carrier on the electronic cooler, and the operation of the electronic cooler is controlled on the basis of the temperature. The temperature inside the package to be accommodated is controlled. At this time, the electrode of the temperature measuring element and the carrier upper surface are thermally connected by a metal member, and the electrode of the temperature measuring element and the wiring board for external connection are electrically connected through the metal member, Heat that flows into or out of the package from the outside is efficiently conducted between the wiring board and the carrier through the metal member. In particular, since the electrode of the temperature measuring element and the metal member are connected by surface contact, the temperature difference between the electrode and the carrier upper surface decreases. Thereby, the inflow and outflow of heat between the electrode of the temperature measuring element and the outside is prevented, and the accuracy of the temperature detected by the temperature measuring element is improved.

  The carrier has a depression formed on the upper surface, the temperature measuring element is mounted on the carrier in the depression, and the connection body is connected to the electrode on the same plane as the surface supported by the carrier. It is also preferable. With this configuration, the shape of the metal member is simplified, the metal member can be easily processed, and rattling when the metal member is attached can be suppressed.

  According to the optical transmission device of the present invention, it is possible to improve the accuracy of temperature control in the package by reducing the influence of heat flow in and out of the temperature measuring element.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of an optical transmission device according to the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted.

  FIG. 1 is a perspective view showing a configuration of an optical transmission device which is a preferred embodiment of the present invention. An optical transmission device 1 shown in FIG. 1 is a device for converting a high-frequency electric signal input from the outside into an optical signal and outputting it.

  The optical transmission device 1 includes a package 10 having a rectangular parallelepiped shape, an optical coupling portion 20 that is fixed to a side surface 12a of the package 10 and is fitted to a ferrule attached to the tip of an optical fiber, and an end portion of the side surface 12a. An L-shaped lead pin 14b attached to the connecting side surface 12b and extending outward substantially perpendicularly to the side surface 12b, and a lead pin 14a attached to the side surface 12c facing the side surface 12a and extending outward substantially perpendicularly to the side surface 12c. Yes. The lead pin 14a is provided to give a high frequency modulation signal to the semiconductor light emitting element inside the package 10, and the lead pin 14b is used to supply power to the electronic cooler, to output a signal from the temperature measuring element, and to monitor the light emitting element. It is provided for input / output of DC signals or low frequency signals such as signal output from the light receiving element and supply of drive current to the semiconductor light emitting element. As described above, the optical transmission device 1 has a butterfly shape in which the lead pins extend outward from the side surface of the rectangular parallelepiped package 10.

  Next, the internal configuration of the optical transmission device 1 will be described with reference to FIGS.

  2A is a partially broken perspective view before mounting various elements of the optical transmission device 1, and FIG. 2B is a schematic view of the state before mounting various elements of the optical transmission device 1 as viewed from the side. 3, (a) is a schematic view of the state after mounting various elements of the optical transmission device 1 as viewed from the side, (b) is an enlarged view of the main part of (a), and FIG. FIG. 2 is a perspective view showing in detail a mounting state of the semiconductor laser element and the thermistor in FIG.

  First, referring to FIGS. 2A to 2B and FIG. 3A, a package 10 is formed by brazing a bottom plate 11 made of a material having a high thermal conductivity such as CuW and an edge portion of the bottom plate 11. And a hermetically bonded sidewall 12. A rectangular parallelepiped pedestal portion 11a is formed on the bottom plate 11 inside the package 10, and an electronic cooler 21 including a Peltier element is mounted on the upper surface of the pedestal portion 11a. The electronic cooler 21 has a structure in which a plurality of Peltier elements 21c, which are semiconductor elements, are connected between an upper substrate 21a and a lower substrate 21b. The shape of the lower surface of the lower substrate 21b is the upper surface of the pedestal portion 11a. By being made the same as the shape, it is mounted in an integrated state with the pedestal 11a. In this pedestal portion 11 a, the adhesive leaked to the periphery when the electronic cooler 21 is bonded onto the bottom plate 11 rises above the lower substrate 21 b of the electronic cooler 21, and the Peltier element 21 c and the pedestal portion 11 a Provided to prevent short circuit.

  The side wall 12 includes a metal plate 12a made of a metal such as Kovar and a multilayer ceramic portion (wiring board) 12c made of an alumina-based material. The multilayer ceramic portion 12c is obtained by superposing a first multilayer ceramic substrate 17a, a second multilayer ceramic substrate 17b, and a ceramic layer 17c on the bottom plate 11 in this order. Here, the first multilayer ceramic substrate 17a and the second multilayer ceramic substrate 17b have wirings formed on the surfaces of a plurality of ceramic layers, and various components housed in the package 10 and lead pins 14a, It has a role which electrically connects between 14b.

  Further, a ceramic carrier 22 such as AlN is mounted on the upper substrate 21 a of the electronic cooler 21. The carrier 22 has the same bottom shape as the upper surface of the upper substrate 21a of the electronic cooler 21, and is joined to the upper substrate 21a by solder. Further, the carrier 22 is formed with a first mounting surface 22a and a second mounting surface 22b which are parallel to each other on the upper surface and have different distances from the upper substrate 21a, and are formed on the second mounting surface 22b on the metal plate 12a side. Is equipped with a lens 23 for converting light emitted from the semiconductor light emitting element into substantially parallel light. On the first mounting surface 22a formed at a position higher than the second mounting surface 22b, a semiconductor laser element 24 as a semiconductor light emitting element and a thermistor (temperature measuring element) 25 for detecting the temperature inside the package 10 are mounted. ing.

  The semiconductor laser element 24 is an EA-DFB type semiconductor light emitting element in which a distributed feedback semiconductor laser (DFB) and a semiconductor modulation element (Electro-Absorption Device) are integrated. It is fixed on the first mounting surface 22a so that the direction faces the direction of the lens 23. The light emitted from the semiconductor laser element 24 passes through the lens 23 and then enters the optical fiber through the optical coupling unit 20 (FIG. 1). The thermistor 25 has electrodes connected to both surfaces of a block-shaped ceramic member, and is mounted on the carrier 22 so that the lower electrode is in contact with the first mounting surface 22a. The terminals of the semiconductor laser element 24 and the lower electrode of the thermistor 25 are connected to the multilayer ceramic portion 12c via the metal pattern on the first mounting surface 22a and the bonding wire 28 passed between the metal pattern and the multilayer ceramic portion 12c. It is connected.

  Next, the mounting state of the thermistor 25 on the carrier 22 will be described in detail with reference to FIGS. As described above, the thermistor 25 is mounted on the carrier 22 with the lower electrode 25b in contact with the metal pattern 29 on the first mounting surface 22a. Further, a heat conductor (metal member) 26 is provided on the upper electrode 25 a and the carrier 22 of the thermistor 25. The heat conductor 26 is made of a metal material (for example, copper) having high heat conductivity, has a substantially L-shaped longitudinal section, and is supported on the first mounting surface 22 a of the carrier 22. 26a and a rectangular parallelepiped connection body 26b connected to the upper electrode 25a of the temperature measuring element 25 are integrally formed. The bottom surface 26c of the support 26a and the bottom surface 26d of the connection body 26b are formed such that the distance between the planes including the respective bottom surfaces is substantially the same as the thickness of the thermistor 25.

  In such a configuration, by connecting the bottom surface 26d of the connection body 26b along the upper electrode 25a of the thermistor 25, the upper electrode 25a and the thermal conductor 26 are thermally connected, and at the same time, the bottom surface of the support body 26a. The carrier 22 and the heat conductor 26 are thermally connected by joining the upper surface of the carrier 22 to the carrier 26c. In order to obtain good adhesion between the support 26 a and the carrier 22, it is preferable that a metal film such as copper metallization is formed at the joint portion of the first mounting surface 22 a of the carrier 22. In this case, however, the metal film and the metal pattern 29 on the carrier 22 must be electrically separated.

  Furthermore, the upper surface of the heat conductor 26 is electrically connected to the wiring pattern on the second multilayer ceramic substrate 17b (see FIG. 3) of the multilayer ceramic portion 12c by wire bonding using a wire (wiring member) 27. Yes. As a result, the upper electrode 25a of the thermistor 25 is electrically connected to the multilayer ceramic part 12c through the heat conductor 26 and the wire 27, and the signal detected by the thermistor 25 is externally transmitted through the multilayer ceramic part 12c and the lead pin 14b. Is output. The signal output from the thermistor 25 in this way is used to detect the temperature of the semiconductor laser element 24 on the carrier 22 in an external control circuit (not shown), and this control circuit allows the semiconductor laser element to be detected. The drive current to the electronic cooler 21 is controlled so that the temperature of 24 is constant.

  The effects of the optical transmission device 1 described above will be described in comparison with a configuration that does not include the heat conductor 26.

  In the configuration of the optical transmission device 1 excluding the heat conductor 26, that is, the configuration in which the upper electrode 25a of the thermistor 25 is directly connected to the multilayer ceramic portion 12c by wire bonding (see FIG. 7), the gap between the outside and the thermistor Heat transfer is likely to occur. That is, since the wire connecting the thermistor 25 and the wiring in the multilayer ceramic portion 12c uses a gold wire having high thermal conductivity, the temperature difference between the inside and outside of the package 10 due to a change in the external environment temperature is caused. Accordingly, heat transfer occurs between the thermistor 25 and the multilayer ceramic part 12c connected to the outside. For example, when the temperature of the multilayer ceramic portion 12c is higher than the temperature of the semiconductor laser element 24 adjusted by the electronic cooler 21, heat flows from the multilayer ceramic portion 12c to the upper electrode 25a of the thermistor 25 through the wire. On the other hand, when the temperature of the multilayer ceramic part 12c is lower than the temperature of the semiconductor laser element 24, heat flows out from the upper electrode 25a to the multilayer ceramic part 12c through the wire.

  Here, since the material of the thermistor 25 is made of a ceramic member such as alumina having a low thermal conductivity, a temperature difference is generated between the upper and lower electrodes of the thermistor 25 due to such heat transfer. Since the electrical resistance of the thermistor 25 has the property of changing following the temperature of the thermistor itself, if there is a temperature difference between the upper and lower electrodes, it becomes difficult to detect the exact temperature by the thermistor 25, and the package by the electronic cooler 21 The accuracy of temperature control within 10 is reduced. As a result, problems such as fluctuations in the current-light output intensity characteristics (IL characteristics) of the semiconductor laser element and degradation of the light output characteristics and oscillation wavelength characteristics due to fluctuations in the oscillation threshold of the semiconductor laser element occur. Furthermore, since it is necessary to heat or cool only the temperature difference, it also affects problems such as an increase in power consumption of the electronic cooler and deterioration of cooling characteristics.

  On the other hand, in the optical transmission device 1 according to the present embodiment, the heat flowing out or inflowing through the wire 27 is applied to the upper electrode 25a due to the presence of the heat conductor 26 having better heat conductivity than the material of the thermistor 25. Accumulation is effectively prevented. That is, the heat that flows into the multilayer ceramic part 12 c from the outside of the package 10 is not stored in the upper electrode 25 a, but flows out to the metal pattern on the carrier 22 through the wire 27 and the heat conductor 26. Thereby, the movement of heat between the upper electrode 25a of the thermistor 25 and the multilayer ceramic part 12c via the wire is prevented, and the temperature difference between the upper and lower electrodes of the thermistor 25 can be reduced. In particular, since the upper electrode 25a of the thermistor 25 and the thermal conductor 26 are connected in surface contact, the temperature difference between the electrode 25a and the upper surface of the carrier 22 is reduced, resulting in a temperature difference between the upper and lower electrodes of the thermistor 25. It will be further reduced. As a result, the temperature detected by the thermistor 25 and the temperature of the semiconductor laser element 24 can be matched, and the accuracy of temperature control by the electronic cooler 21 can be improved.

  In addition, this invention is not limited to embodiment mentioned above. For example, as the connection form between the heat conductor 26 and the thermistor 25 and the carrier 22, various other forms can be adopted.

  5 to 6 are perspective views showing in detail the mounting state of the semiconductor laser element 24 and the thermistor 25 on the carrier in the modification of the optical transmission device of the present invention. In FIG. 5A, the installation direction of the heat conductor 36 is rotated 180 degrees with respect to the heat conductor 26 on the thermistor 25 and the carrier 22. 5B has a substantially U-shaped longitudinal section, and a first support 46b and a second support 46c are formed on both end sides of the bottom surface. The first support body 46b and the second support body 46c are joined to the first mounting surface 22a of the carrier 22, and the connection body 46a formed between the first support body 46b and the second support body 46c is a thermistor 25. To the upper electrode 25a. With such a connection structure, rattling when the thermal conductor 46 is mounted on the carrier 22 is reduced, and the thermal resistance between the carrier 22 and the thermal conductor 46 is further reduced.

  In the modification shown in FIG. 6A, a recess 22c is formed at a corner of the carrier 22 at a position lower than the first mounting surface 22a, and the thermistor 25 is mounted on the recess 22c. The distance between the plane including the recess 22c and the first mounting surface 22a is substantially the same as the thickness of the thermistor 25, so that the first mounting surface 22a and the upper electrode 25a of the thermistor 25 are positioned on the same plane. is doing. Further, the heat conductor 56 has a rectangular parallelepiped shape in which the support body 56 a and the connection body 56 b are integrated, and the connection body 56 b is a first mounting surface 22 a that is a surface on which the support body 56 a is supported by the carrier 22. Are connected to the upper electrode 25a on the same plane. With such a configuration, the shape of the heat conductor is simplified, the processing of the heat conductor is facilitated, and rattling when the heat conductor is attached can be suppressed. In the modification shown in FIG. 6B, the heat conductor 66 has a substantially L-shaped cross section in the vertical direction, and on the opposite side of the first support 66a sandwiching the connection body 66b, A second support 66c protruding downward is formed. The thermal conductor 66 is connected to the upper electrode 25a on the bottom surface of the connection body 66b, and at the same time, on the first mounting surface 22a and the recess 22c of the carrier 22 on the bottom surfaces of the first support body 66a and the second support body 66c. It is joined.

  Next, the simulation result of the temperature distribution of the semiconductor laser element 24 and the thermistor in the optical transmission device 1 of the present invention and its modification will be shown. 9A is a graph showing a simulation result of the relationship between the temperature difference between the inside and outside of the package and the temperature difference between the upper and lower electrodes of the thermistor in the optical transmission device which is the above-described embodiment and its modification, and FIG. 5 is a graph showing a simulation result of the relationship between the temperature difference between the inside and outside of the package and the temperature difference with respect to the thermistor of the semiconductor laser element.

Here, as main materials of each component of the optical transmission device 1, the semiconductor laser element 24, the carrier 22, the thermistor 25, the upper and lower substrates 21a and 21b of the electronic cooler 21, the bottom plate 11 of the package 10, the multilayer ceramic portion 12c, the wire 27 and the heat conductors 26, 36, 46, 56, 66 are respectively made of InP, AlN, Al ₂ O ₃ , Al ₂ O ₃ , CuW, Al ₂ O ₃ , Au, Cu. Assuming that the thermal conductivity [W / mK] is 68, 170, 17, 17, 180, 17, 300, 390, respectively. Further, as environmental conditions, the temperature of the upper substrate 21a of the electronic cooler 21 is 35 ° C., the state in which nitrogen is naturally convected as the internal environment of the package 10, and the state in which air is naturally convected as the external environment of the package 10 Was assumed. The amount of heat generated in the package 10 was 0.18 W for the distributed feedback semiconductor laser of the semiconductor laser element 24, 0.0368 W for the semiconductor modulation element, and 0.9 W for the high temperature side substrate of the electronic cooler 21. Under these conditions, a simulation was performed assuming that the optical transmission device was placed on a metal base made of SUS304.

  In the same figure, the modified examples 1 to 4 are the modified examples of FIGS. 5A, 5B, 6A, and 6B, respectively, and the comparative examples 1 to 4 are respectively This corresponds to the configuration shown in FIGS. 7, 8 (a), 8 (b), and 8 (c). 8A shows the case where the upper electrode of the thermistor and the upper surface of the carrier are connected by three gold wires (φ25 μm) having a thermal conductivity of 300 [W / mK], FIG. When connected by a gold ribbon wire having a thermal conductivity of 300 [W / mK], FIG. 8C shows a case of connecting by a phosphor bronze leaf spring having a thermal conductivity of 62.8 [W / mK]. Yes.

Referring to FIG. 9A, in Comparative Example 1, the temperature difference ΔT _th between the thermistor upper and lower electrodes increases as the difference ΔT _LD−PKG between the set temperature of the semiconductor laser element and the package temperature increases. . For example, ΔT _th = 1.3 ° C. when the operation guarantee temperature of the optical transmission device (converted to the package temperature) T _C = −5 ° C. and 75 ° C. (ΔT _LD−PKG = 40 ° C.) . In Comparative Examples 2 to 4, although the temperature difference ΔT _th is slightly reduced, it is still relatively large. On the other hand, in the above-described embodiment and its modifications 1 to 4, ΔT _th ≦ 0.1 is shown in a wide range of ΔT _LD-PKG , and the temperature difference between the thermistor upper and lower electrodes is reduced. Therefore, the accuracy of the temperature detected by the thermistor is improved. In addition, referring to FIG. 9B, in relation to the temperature difference ΔT _LD-PKG and the temperature difference ΔT _LD-th with respect to the upper electrode of the thermistor on the lower surface of the semiconductor laser element, in Comparative Examples 1 to 4, the temperature difference The temperature difference ΔT _LD-th varies with an increase in ΔT _LD-PKG . On the other hand, in the above-described embodiment and Modifications 1 to 4, the temperature difference ΔT _LD−PKG is maintained substantially constant between ΔT _LD−th = 1.0 to 1.3 ° C. over a wide range. Therefore, it is easy to maintain the temperature of the semiconductor laser element at a predetermined value by feeding back the temperature difference ΔT _LD-th as a correction value and controlling the temperature.

It is a perspective view which shows the structure of the optical transmission device which is embodiment of this invention. (A) is a partially broken perspective view before mounting various elements of the optical transmission device of FIG. 1, and (b) is a schematic view of the state before mounting of the various elements of the optical transmission device of FIG. It is. (A) is the schematic diagram which looked at the state after mounting of the various elements of the optical transmission device of FIG. 1 from the side, (b) is the principal part enlarged view of (a). FIG. 4 is a perspective view showing in detail a mounting state of the semiconductor laser element and the thermistor on the carrier of FIG. 3. (A)-(b) is a perspective view which shows the mounting state of the semiconductor laser element on a carrier, and a thermistor in the optical transmission device which is a modification of this invention. (A)-(b) is a perspective view which shows the mounting state of the semiconductor laser element and thermistor on a carrier in the optical transmission device which is the other modification of this invention. In the optical transmission device which is the comparative example of this invention, it is a perspective view which shows the mounting state of the semiconductor laser element on a carrier, and a thermistor. (A)-(c) is a perspective view which shows the mounting state of the semiconductor laser element on a carrier, and the thermistor in the optical transmission device which is the other comparative example of this invention. (A) is a graph showing a simulation result of the relationship between the temperature difference between the inside and outside of the package in the optical transmission device and the temperature difference between the upper and lower electrodes of the thermistor; (b) is the temperature difference between the inside and outside of the package in the optical transmission device; It is a graph which shows the simulation result of the relationship with the temperature difference with respect to the thermistor of an element.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Optical transmission device, 10 ... Package, 12c ... Multilayer ceramic part (wiring board), 21 ... Electronic cooler, 21a ... Upper board | substrate (upper surface), 22 ... Carrier, 22c ... Depression part, 24 ... Semiconductor laser element (semiconductor) Light emitting element), 25 ... Thermistor (temperature measuring element), 25a ... Upper electrode, 26, 36, 46, 56, 66 ... Thermal conductor (metal member), 26a, 46b, 46c, 56a, 66a, 66c ... Support , 26b, 46a, 56b, 66b ... connection body, 27 ... wire (wiring member).

Claims (2)

An electronic cooler housed inside the package;
A carrier made of an insulating material mounted on the upper surface of the electronic cooler inside the package and mounting a semiconductor light emitting element;
A temperature measuring element mounted on the carrier and detecting the temperature inside the package;
A metal member including a support body supported on the upper surface of the carrier and a connection body connected on the same plane as the electrode of the temperature measuring element;
A wiring board for outputting a signal from the temperature measuring element to the outside;
A wiring member for electrically connecting the metal member and the wiring board;
An optical transmission device comprising: The carrier has a recess formed on the upper surface,
The temperature measuring element is mounted on the carrier in the recess,
The connection body is connected to the electrode on the same plane as the surface on which the support is supported by the carrier.
The optical transmission device according to claim 1.

Images