JP2007034270A - アレイ基板及びこれを有する表示装置 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 90
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000004973 liquid crystal related substance Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】ベース基板100、多数の画素電極、多数の第1導電配線(ゲート線110)、多数の第2導電配線(データ線140)、第1導電配線と第2導電配線の交差部において第1導電配線と第2導電配線の間に介在される半導体パターン130を含むことを特徴とする。
【選択図】図2
Description
図1は、本発明の一実施形態による液晶表示装置用薄膜トランジスタ基板の配置図で、図2は、図1のA領域を拡大図示した平面図で、図3は、図2のI−Iに沿って切断した断面を示す断面図である。
図4は、本発明の他の実施形態を示す図である。
図5は、本発明の他の実施形態による液晶表示装置用薄膜トランジスタ基板の配置図で、図6は、図5のB領域を拡大図示した平面図で、図7は、図6のII−IIに沿って切断した断面を図示した断面図である。本実施形態において、実施形態1に図示された構成要素と同じ構成要素についての重複説明を省略する。
図8は、本発明の一実施形態による液晶表示装置の断面図である。図8の薄膜トランジスタ基板は、図1乃至図3に図示された薄膜トランジスタ基板と同じなので、重複説明は省略する。
110…ゲート線、
110’…ストレージ配線、
120…ゲート絶縁膜、
130…半導体層、
140…データ線、
150…保護膜、
160…画素電極、
170…薄膜トランジスタ基板、
180…カラーフィルター基板。
Claims (11)
- ベース基板と、
前記ベース基板上に配列される多数の画素電極と、
前記画素電極間に配列される多数の第1導電配線と、
前記第1導電配線と交差部で交差してマトリックス形態に配列され、少なくとも一対が隣接した画素電極間に配置され、前記隣接した画素電極間に配置される一対は隣接する交差部で最長間隔を有する多数の第2導電配線と、
前記第1及び第2導電配線間の前記交差部間に介在され、前記交差部面積より大きい面積を有し、前記交差部間で前記最長間隔より小さい間隔に形成された半導体パターンと、を含むアレイ基板。 - 前記半導体パターンは、前記交差部上の前記第1導電配線及び前記第2導電配線間に配置されることを特徴とする請求項1記載のアレイ基板。
- 前記一対の第2導電配線の前記交差部の外郭での一部分の間隔は、前記最長間隔より小さく形成されることを特徴とする請求項1記載のアレイ基板。
- 前記各画素電極に電気的に連結されるドレイン電極、前記第1導電配線のうちの一つに電気的に連結されるゲート電極、及び前記第2導電配線のうちの一つと電気的に連結されるソース電極を具備し、前記ベース基板上に配列される複数個の薄膜トランジスタを更に含むことを特徴とする請求項1記載のアレイ基板。
- 前記各画素電極に電気的に連結されるドレイン電極、前記第1導電配線のうちの一つに電気的に連結されるソース電極、及び前記第2導電配線のうちの一つと電気的に連結されるゲート電極を具備し、前記ベース基板上に配列される複数個の薄膜トランジスタを更に含むことを特徴とする請求項1記載のアレイ基板。
- 前記第1導電配線と同一層に形成され、前記第2導電配線と補助交差部で交差するストレージ配線を更に含み、前記隣接した画素電極間の隣接する前記補助交差部上の前記一対の第2導電配線間の間隔は、前記一対の第2導電配線の前記交差部及び前記補助交差部の外郭での一部分の間隔より大きいことを特徴とする請求項1記載のアレイ基板。
- 前記第1及び第2導電配線間の前記補助交差部間に介在され、前記補助交差部面積より大きい補助半導体パターンを更に含むことを特徴とする請求項6記載のアレイ基板。
- 前記補助半導体パターンは、前記補助交差部上の前記第1導電配線及び前記第2導電配線間に配置されることを特徴とする請求項7記載のアレイ基板。
- 下部ベース基板、前記下部ベース基板上に配列される多数の画素電極、前記画素電極間に配列される多数の第1導電配線、前記第1導電配線と交差部で交差してマトリックス形態に配列され、少なくとも一対が隣接した画素電極間に配置され、前記隣接した画素電極間に配置される一対は、隣接する交差部で最長間隔を有する多数の第2導電配線、及び前記第1及び第2導電配線間の前記交差部間に介在され前記交差部面積より大きい面積を有し、前記交差部間で前記最長間隔より小さい間隔に形成された半導体パターンを含むアレイ基板と、
上部ベース基板、及び前記上部ベース基板上に形成される共通電極を含む対向基板と、
前記アレイ基板と前記対向基板との間に介在される液晶層と、を含む液晶表示装置。 - 前記半導体パターンは、前記交差部上の前記第1導電配線及び前記第2導電配線間に配置されることを特徴とする請求項9記載の液晶表示装置。
- 前記一対の第2導電配線の前記交差部の外郭での一部分の間隔は、前記最長間隔より小さく形成されることを特徴とする請求項9記載の液晶表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050066354A KR101148163B1 (ko) | 2005-07-21 | 2005-07-21 | 어레이 기판 및 이를 갖는 표시장치 |
KR10-2005-0066354 | 2005-07-21 |
Publications (2)
Publication Number | Publication Date |
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JP2007034270A true JP2007034270A (ja) | 2007-02-08 |
JP4939832B2 JP4939832B2 (ja) | 2012-05-30 |
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JP2006123195A Expired - Fee Related JP4939832B2 (ja) | 2005-07-21 | 2006-04-27 | アレイ基板及びこれを有する表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7528412B2 (ja) |
JP (1) | JP4939832B2 (ja) |
KR (1) | KR101148163B1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011176008A (ja) * | 2010-02-23 | 2011-09-08 | Sony Corp | 薄膜トランジスタ構造体およびその製造方法、ならびに電子機器 |
JP2021099505A (ja) * | 2019-12-13 | 2021-07-01 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP2022141698A (ja) * | 2019-12-13 | 2022-09-29 | 株式会社半導体エネルギー研究所 | 透過型液晶表示装置、電子機器 |
US11520185B2 (en) | 2007-05-17 | 2022-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP7237439B1 (ja) | 2022-07-01 | 2023-03-13 | 株式会社半導体エネルギー研究所 | 透過型液晶表示装置、電子機器 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102550460B1 (ko) | 2016-03-30 | 2023-07-03 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102576428B1 (ko) | 2016-04-29 | 2023-09-08 | 삼성디스플레이 주식회사 | 어레이 기판, 이를 포함하는 액정 표시 장치 및 어레이 기판의 제조 방법 |
KR102654173B1 (ko) * | 2019-07-31 | 2024-04-03 | 삼성디스플레이 주식회사 | 표시 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62280890A (ja) * | 1986-05-30 | 1987-12-05 | 松下電器産業株式会社 | アクテイブマトリツクスアレイ |
JPH02198430A (ja) * | 1989-01-27 | 1990-08-06 | Nec Corp | 薄膜電界効果型トランジスタ素子アレイ |
JPH02277027A (ja) * | 1989-04-19 | 1990-11-13 | Sanyo Electric Co Ltd | 液晶表示装置 |
JPH0611734A (ja) * | 1992-04-15 | 1994-01-21 | Toshiba Corp | 液晶表示装置 |
JP2001235761A (ja) * | 2000-02-21 | 2001-08-31 | Seiko Epson Corp | 電気光学装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100984345B1 (ko) * | 2003-05-30 | 2010-09-30 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
US7760317B2 (en) | 2003-10-14 | 2010-07-20 | Lg Display Co., Ltd. | Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display |
-
2005
- 2005-07-21 KR KR1020050066354A patent/KR101148163B1/ko active IP Right Grant
-
2006
- 2006-04-27 JP JP2006123195A patent/JP4939832B2/ja not_active Expired - Fee Related
- 2006-05-02 US US11/416,214 patent/US7528412B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62280890A (ja) * | 1986-05-30 | 1987-12-05 | 松下電器産業株式会社 | アクテイブマトリツクスアレイ |
JPH02198430A (ja) * | 1989-01-27 | 1990-08-06 | Nec Corp | 薄膜電界効果型トランジスタ素子アレイ |
JPH02277027A (ja) * | 1989-04-19 | 1990-11-13 | Sanyo Electric Co Ltd | 液晶表示装置 |
JPH0611734A (ja) * | 1992-04-15 | 1994-01-21 | Toshiba Corp | 液晶表示装置 |
JP2001235761A (ja) * | 2000-02-21 | 2001-08-31 | Seiko Epson Corp | 電気光学装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11520185B2 (en) | 2007-05-17 | 2022-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US11754881B2 (en) | 2007-05-17 | 2023-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US12019335B2 (en) | 2007-05-17 | 2024-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP2011176008A (ja) * | 2010-02-23 | 2011-09-08 | Sony Corp | 薄膜トランジスタ構造体およびその製造方法、ならびに電子機器 |
JP2021099505A (ja) * | 2019-12-13 | 2021-07-01 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP7100732B2 (ja) | 2019-12-13 | 2022-07-13 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP2022141698A (ja) * | 2019-12-13 | 2022-09-29 | 株式会社半導体エネルギー研究所 | 透過型液晶表示装置、電子機器 |
JP7155452B2 (ja) | 2019-12-13 | 2022-10-18 | 株式会社半導体エネルギー研究所 | 透過型液晶表示装置、電子機器 |
JP7237439B1 (ja) | 2022-07-01 | 2023-03-13 | 株式会社半導体エネルギー研究所 | 透過型液晶表示装置、電子機器 |
JP2023065465A (ja) * | 2022-07-01 | 2023-05-12 | 株式会社半導体エネルギー研究所 | 透過型液晶表示装置、電子機器 |
Also Published As
Publication number | Publication date |
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US20070018159A1 (en) | 2007-01-25 |
KR101148163B1 (ko) | 2012-05-23 |
US7528412B2 (en) | 2009-05-05 |
KR20070011790A (ko) | 2007-01-25 |
JP4939832B2 (ja) | 2012-05-30 |
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